Silicon wafer coating carrier cleaning equipment

Abstract

The utility model discloses silicon wafer coating carrier cleaning equipment which comprises a cleaning equipment body, a first cleaning system, a second cleaning system and an air exhaust mechanism, a reaction chamber is arranged in the cleaning equipment body, and the first cleaning system comprises a first communication port, a first exhaust port and a first plasma generator; the second cleaning system comprises a second communicating port, a second exhaust port and a second plasma generator; wherein when the first cleaning system is started for cleaning, the air exhaust mechanism extracts air in the reaction chamber independently through the first exhaust port; and when the second cleaning system is started for cleaning, the air exhaust mechanism extracts air in the reaction chamber through the second exhaust port independently. By the adoption of the structure, plasmas can flow in the opposite direction and repeatedly clean the silicon wafer coating carrier, and the technical problems that in the cleaning process of an existing dry cleaning device for the silicon wafer coating carrier, local cleaning is not uniform, and dead corners are not cleaned in place are effectively solved.

Description

Technical Field

[0001] The utility model relates to the field of solar photovoltaic cell production, in particular to a silicon wafer coating carrier cleaning device. Background Art

[0002] Solar photovoltaic cells are devices that use the photovoltaic effect to directly convert light energy into electrical energy. The production process of solar photovoltaic cells requires multiple processes to form qualified solar photovoltaic cells. Among them, the PECVD coating process uses a graphite boat to carry silicon wafers, and the coating reaction is carried out in the PECVD reaction chamber. During the silicon wafer coating process, the outer surface of the graphite boat will also be coated with a thin film layer containing silicon nitride, silicon oxide, amorphous silicon and other components. With the increase in the number of coating times, the thin film layer coated on the outer surface of the graphite will become thicker and thicker. This thin film layer will seriously affect the discharge performance of the graphite boat, resulting in uneven coating of the silicon wafer, serious color difference, etc., affecting the coating effect of the solar photovoltaic cell. In order to ensure that the graphite boat always serves as a good silicon wafer coating carrier during the PECVD coating process, the graphite boat needs to be cleaned regularly.

[0003] The cleaning of graphite boats in PECVD equipment generally adopts tank-type wet cleaning, that is, the entire graphite boat is immersed in an acid solution or an alkaline solution for a long time, and then rinsed and dried. For graphite boats depositing thin film layers containing silicon nitride, acid cleaning + rinsing and drying are generally adopted; for graphite boats depositing thin film layers of tunnel oxide layers and doped amorphous silicon layers passivating contact structures, acid cleaning + alkaline cleaning + rinsing and drying methods are adopted. It can be seen that wet cleaning has the disadvantages of many and complex cleaning steps, long cleaning time, and low cleaning efficiency. In addition, the acid and alkaline wastewater needs to be treated after cleaning. The large amount of chemical waste liquid makes wastewater treatment difficult. It is also necessary to build an additional boat washing room and equip special boat washing personnel. The investment cost of the boat washing room is high and the personnel cost is high. In addition, repeated tank-type wet cleaning of the graphite boat may also cause damage to the graphite boat, and multiple people are required to operate to maintain the graphite boat. This wet cleaning method not only has high cleaning costs and high labor costs, but also the cleaning equipment occupies a large area.

[0004] At present, some manufacturers have tried to use dry cleaning process to clean graphite boats on a small scale. The dry cleaning equipment has a compact structure, simple process and convenient operation. The cleaning of graphite boats can be completed quickly in one device, which solves the main problems of large equipment footprint, complex cleaning process and large amount of waste liquid treatment. There are two main types of dry cleaning equipment: the first is to generate plasma in the cleaning reaction chamber for cleaning; the second is to generate remote plasma outside the cleaning reaction chamber and then send it into the cleaning reaction chamber for cleaning.

[0005] Of these two types of dry cleaning equipment, the first type of dry cleaning equipment has a relatively complex reaction chamber structure, which requires a complex gas path layout and electrode structure. The corresponding electric field, temperature field, and gas field control are more complex, with higher manufacturing costs and greater difficulty in use. The process gas of the second type of dry cleaning equipment is ionized by an external plasma generator (RPS power supply) to generate plasma, which is then introduced into the cleaning reaction chamber to clean the graphite boat. There is no complex electric field, temperature field, and gas field control, so this type of dry cleaning equipment has a simple structure and is easy to operate.

[0006] Compared with wet cleaning, dry cleaning has many advantages such as short cleaning time, small amount of waste gas generated, low treatment cost, and small equipment footprint. The principle is to introduce nitrogen trifluoride (NF3) as a process gas for ionization, and chemically react with the silicon oxide film and doped amorphous silicon film on the surface of the graphite boat to remove the silicon oxide film and doped amorphous silicon film. However, the technology of dry cleaning of graphite boats is not mature enough at present, and there are also some defects, such as: unstable equipment process control, unclear local cleaning, difficult to thoroughly clean the dead corners of the graphite boat, and residual film on the surface. Rework cleaning is required, and the rework ratio is large. Utility Model Content

[0007] The utility model aims to solve one of the problems of the prior art to at least a certain extent. To this end, the utility model proposes a silicon wafer coating carrier cleaning device with a simple structure, which can perform dry cleaning on the silicon wafer coating carrier and has a better cleaning effect.

[0008] According to some embodiments of the utility model, a silicon wafer coating carrier cleaning device comprises a cleaning device body, a first cleaning system, a second cleaning system and an exhaust mechanism, wherein a reaction chamber for cleaning a silicon wafer coating carrier is arranged inside the cleaning device body, the reaction chamber having a first end and a second end, the first cleaning system comprising a first connecting port, a first exhaust port and a first plasma generator, the first connecting port and the first exhaust port being arranged at the first end and the second end of the reaction chamber in a one-to-one correspondence, the first plasma generator being located outside the reaction chamber, the first plasma generator having a first air inlet and a first air outlet, the first air outlet being connected to the first connecting port, one of the first connecting port and the first exhaust port being arranged at the upper side of the reaction chamber, and the other being arranged at the lower side of the reaction chamber; the second cleaning system comprising a second connecting port, a second exhaust port and a first plasma generator The second plasma generator comprises a gas inlet and a second plasma generator, wherein the second connecting port and the second exhaust port are respectively arranged at the second end and the first end of the reaction chamber, the second plasma generator is located outside the reaction chamber, the second plasma generator has a second gas inlet and a second gas outlet, the second gas outlet is connected to the second connecting port, one of the second connecting port and the second exhaust port is arranged on the upper side of the reaction chamber, and the other is arranged on the lower side of the reaction chamber; the gas extraction mechanism is connected to the first exhaust port and the second exhaust port; wherein, when the first cleaning system is started to clean the silicon wafer coating carrier, the gas extraction mechanism extracts the gas inside the reaction chamber through the first exhaust port alone; when the second cleaning system is started to clean the silicon wafer coating carrier, the gas extraction mechanism extracts the gas inside the reaction chamber through the second exhaust port alone.

[0009] A silicon wafer coating carrier cleaning device according to some embodiments of the utility model has the following beneficial effects:

[0010] The silicon wafer coating carrier cleaning device in the present embodiment adopts a structure mainly composed of a cleaning device body, a first cleaning system, a second cleaning system and an exhaust mechanism. The silicon wafer coating carrier cleaning device in the present embodiment can repeatedly clean the silicon wafer coating carrier by using a structure in which the exhaust mechanism cooperates with the first cleaning system and a structure in which the exhaust mechanism cooperates with the second cleaning system, thereby enabling the plasma generated by the first plasma generator and the plasma generated by the second plasma generator to repeatedly clean the silicon wafer coating carrier in opposite flow directions, effectively solving the problem of existing silicon wafer coating carrier dry cleaning devices in the cleaning process. The technical problems of uneven local cleaning and inadequate cleaning of dead corners are solved, which greatly improves the cleaning effect of the silicon wafer coating carrier cleaning equipment of the present embodiment. Moreover, the silicon wafer coating carrier cleaning equipment of the present embodiment directly produces plasma by adopting the first plasma generator and the second plasma generator, and then transports the plasma into the reaction chamber to clean the silicon wafer coating carrier. Therefore, there is no need to arrange a complex gas path layout and electrode structure inside the reaction chamber, and there is no complex electric field, temperature field, and gas field control. Therefore, the silicon wafer coating carrier of the present embodiment has a simpler structure and is more convenient to operate.

[0011] In some embodiments of the present application, the first cleaning system includes a first exhaust guide plate, a plurality of first air holes are spaced apart on the surface of the first exhaust guide plate, the first exhaust guide plate is located inside the reaction chamber, and the first exhaust guide plate covers the first exhaust port; and / or the second cleaning system includes a second exhaust guide plate, a plurality of second air holes are spaced apart on the surface of the second exhaust guide plate, the second exhaust guide plate is located inside the reaction chamber, and the second exhaust guide plate covers the second exhaust port.

[0012] In some embodiments of the present application, the first cleaning system includes the first exhaust guide plate, and the second cleaning system includes the second exhaust guide plate. The first exhaust guide plate and the second exhaust guide plate both include an elongated guide plate body, and both ends of the guide plate body are respectively provided with cross bars extending toward the outside of the same side of the guide plate body. The first exhaust guide plate is located at the first end of the reaction chamber, and the cross bar of the first exhaust guide plate faces the second end of the reaction chamber; the second exhaust guide plate is located at the second end of the reaction chamber, and the cross bar of the second exhaust guide plate faces the first end of the reaction chamber.

[0013] In some embodiments of the present application, the first exhaust port and the second exhaust port are both located on the lower side of the reaction chamber, the first exhaust guide plate and the second exhaust guide plate cover the first exhaust port and the second exhaust port one by one, and the first exhaust guide plate and the second exhaust guide plate enclose an area for placing a silicon wafer coating carrier to be cleaned.

[0014] In some embodiments of the present application, the guide plate body and the two cross bar portions are an integrated structure, a recessed groove extending to the two cross bar portions is provided on the surface of the guide plate body, and a plurality of through holes are provided at intervals on the bottom wall of the recessed groove.

[0015] In some embodiments of the present application, the first communication port is covered with a first gas distribution plate, and the second communication port is covered with a second gas distribution plate.

[0016] In some embodiments of the present application, a first gas distribution plate and a second gas distribution plate are provided at both ends of the interior of the reaction chamber in a one-to-one correspondence; wherein, the first gas distribution plate and the inner wall of the reaction chamber are sealed to form a first air cavity, and the first connecting port is connected to the interior of the first air cavity; the second gas distribution plate and the inner wall of the reaction chamber are sealed to form a second air cavity, and the second connecting port is connected to the interior of the second air cavity.

[0017] In some embodiments of the present application, the air suction mechanism includes a first valve body, a second valve body and an air suction device, the air suction device is connected to the first exhaust port through a first pipe, the air suction device is connected to the second exhaust port through a second pipe, the first valve body is arranged in the first pipe, and the second valve body is arranged in the second pipe.

[0018] In some embodiments of the present application, the vacuum mechanism includes two groups of independent vacuum components, each group of the vacuum components includes a vacuum device, one of the vacuum devices is connected to the first exhaust port through a pipe, and the other vacuum device is connected to the second exhaust port through another pipe.

[0019] In some embodiments of the present application, the cleaning equipment body is provided with a heating device capable of heating the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of a silicon wafer coating carrier cleaning device according to some embodiments of the utility model;

[0021] Figure 2 yes Figure 1 Schematic diagram of the cross-section structure along line AA;

[0022] Figure 3 yes Figure 1 A schematic diagram of gas flow when a silicon wafer coating carrier cleaning device uses an exhaust mechanism and a first cleaning system to clean a silicon wafer coating carrier;

[0023] Figure 4 yes Figure 1 A schematic diagram of gas flow when a silicon wafer coating carrier cleaning device uses an exhaust mechanism and a second cleaning system to clean a silicon wafer coating carrier;

[0024] Figure 5 yes Figure 1 A schematic diagram of the structure of a first exhaust guide plate in a silicon wafer coating carrier cleaning device is shown. DETAILED DESCRIPTION

[0025] Embodiments of the present embodiment are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present embodiment, and should not be construed as limiting the present embodiment.

[0026] The drawings used in this embodiment are schematic and principle and are only used to facilitate the description of this embodiment and simplify the description. Therefore, they should not be understood as limiting this embodiment.

[0027] In the description of this embodiment, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0028] In the description of this embodiment, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this embodiment based on the specific content of the technical solution.

[0029] Figures 1 to 5 It is a schematic diagram of some implementations of a silicon wafer coating carrier cleaning device of the utility model.

[0030] Reference Figures 1 to 5 ( Figure 3 and Figure 4 The direction of the arrow in the figure indicates the direction of gas flow) and mainly refers to Figure 1 , Figure 3 and Figure 4, a silicon wafer coating carrier cleaning device according to certain embodiments of the utility model, for the convenience of description, is sometimes referred to as "silicon wafer coating carrier cleaning device" hereinafter. A silicon wafer coating carrier cleaning device includes a cleaning device body 100, a first cleaning system, a second cleaning system and an exhaust mechanism. In this embodiment, the cleaning device body 100 is roughly in the shape of a long strip, and a reaction chamber 110 for cleaning a silicon wafer coating carrier 600 is arranged inside the cleaning device body 100, that is, the reaction chamber 110 can accommodate the silicon wafer coating carrier 600 to be cleaned, and the reaction chamber 110 is arranged along the length direction of the cleaning device body 100. The reaction chamber 110 has a first end 111 and a second end 112. The first end 111 and the second end 112 refer to the opposite ends of the reaction chamber 110. It should be noted that the side wall of the cleaning equipment body 100 is provided with an inlet and outlet for the silicon wafer coating carrier 600 to enter or exit the reaction chamber 110, and the cleaning equipment body 100 can also be detachably installed with a sealing door that can open or close the inlet and outlet. The user can remove the sealing door to allow the silicon wafer coating carrier 600 to enter the reaction chamber 110 or exit from the reaction chamber 110; when the silicon wafer coating carrier 600 is transported into the reaction chamber 110 for cleaning, the user can install the sealing door on the cleaning equipment body 100 and close the inlet and outlet, so that the reaction chamber 110 forms a closed chamber, so as to facilitate the subsequent cleaning of the silicon wafer coating carrier 600. Since the use of the sealing door to open or close the inlet and outlet of the reaction chamber 110 belongs to the conventional technology in the art, it will not be repeated here. It should be noted that in this embodiment, the above-mentioned silicon wafer coating carrier 600 refers to a graphite boat or a quartz boat, or the silicon wafer coating carrier 600 can be other devices that can load and support silicon wafers for coating.

[0031] The first cleaning system includes a first connecting port 210, a first exhaust port 220 and a first plasma generator 230. The first connecting port 210 and the first exhaust port 220 are arranged at the first end 111 and the second end 112 of the reaction chamber 110 in a one-to-one correspondence, that is, the first connecting port 210 is opened at the first end 111 of the reaction chamber 110, and the first connecting port 210 is connected to the interior of the reaction chamber 110, and the first exhaust port 220 is opened at the second end 112 of the reaction chamber 110, and the first exhaust port 220 is connected to the interior of the reaction chamber 110. The first plasma generator 230 is located outside the reaction chamber 110. The first plasma generator 230 has a first gas inlet and a first gas outlet. The first gas outlet is connected to the first communication port 210. One of the first communication port 210 and the first exhaust port 220 is disposed at the upper side of the reaction chamber 110, and the other is disposed at the lower side of the reaction chamber 110. That is, when the first communication port 210 is disposed at the upper side of the first end 111 of the reaction chamber 110, the first exhaust port 220 is disposed at the lower side of the second end 112 of the reaction chamber 110, or when the first communication port 210 is disposed at the lower side of the first end 111 of the reaction chamber 110, the first exhaust port 220 is disposed at the upper side of the second end 112 of the reaction chamber 110. In this embodiment, the first communication port 210 is opened at the upper side of the first end 111 of the reaction chamber 110, and the first exhaust port 220 is opened at the lower side of the second end 112 of the reaction chamber 110. The external process gas can be transported into the first plasma generator 230 from the first gas inlet of the first plasma generator 230. At this time, the first plasma generator 230 starts working and causes the process gas to react to generate plasma. The plasma flows out from the first gas outlet of the first plasma generator 230 along with the process gas, and then passes through the first connecting port 210 and flows into the interior of the reaction chamber 110.

[0032] The second cleaning system includes a second communication port 310, a second exhaust port 320, and a second plasma generator 330. The second communication port 310 and the second exhaust port 320 are arranged one-to-one at the second end 112 and the first end 111 of the reaction chamber 110, that is, the second communication port 310 is opened at the second end 112 of the reaction chamber 110, and the second communication port 310 is connected to the inside of the reaction chamber 110. The second exhaust port 320 is opened at the first side 111 of the reaction chamber 110, and the second exhaust port 320 is connected to the inside of the reaction chamber 110. The second plasma generator 330 is located outside the reaction chamber 110, and the second plasma generator 330 has a second gas inlet and a second gas outlet, and the second gas outlet is connected to the second communication port 310. One of the second communication port 310 and the second exhaust port 320 is disposed at the upper side of the reaction chamber 110, and the other is disposed at the lower side of the reaction chamber 110, that is, when the second communication port 310 is disposed at the upper side of the second end 112 of the reaction chamber 110, the second exhaust port 320 is disposed at the lower side of the first end 111 of the reaction chamber 110; or when the second communication port 310 is disposed at the lower side of the second end 112 of the reaction chamber 110, the second exhaust port 320 is disposed at the upper side of the first end 111 of the reaction chamber 110. In this embodiment, the second communication port 310 is opened at the upper side of the second end 112 of the reaction chamber 110, and the second exhaust port 320 is opened at the lower side of the first end 111 of the reaction chamber 110. The external process gas can flow into the interior of the second plasma generator 330 from the second gas inlet of the second plasma generator 330. At this time, the second plasma generator 330 starts and reacts to the process gas to generate plasma. The plasma can flow into the second gas outlet of the second plasma generator 330 along with the process gas and pass through the second connecting port 310, and finally enter the interior of the reaction chamber 110.

[0033] It should be noted that the first plasma generator 230 and the second plasma generator 330 are conventional technologies in the art and are commercially available, and will not be described in detail herein.

[0034] In some embodiments of the present embodiment, the exhaust mechanism is connected to the first exhaust port 220 and the second exhaust port 320. When the first cleaning system is started to clean the silicon wafer coating carrier 600, the exhaust mechanism extracts the gas inside the reaction chamber 110 through the first exhaust port 220 alone; when the second cleaning system is switched to clean the silicon wafer coating carrier 600, the first cleaning system is turned off, and the second cleaning system is started to clean the silicon wafer coating carrier 600, the exhaust mechanism extracts the gas inside the reaction chamber 110 through the second exhaust port 320 alone.

[0035] Reference Figures 1 to 5The specific process of cleaning the silicon wafer coating carrier 600 by the silicon wafer coating carrier cleaning device of certain embodiments of the utility model is as follows:

[0036] First, the silicon wafer coating carrier 600 to be cleaned is transported into the interior of the reaction chamber 110 and the reaction chamber 110 is in a closed state. Then, the first cleaning system is started to clean the silicon wafer coating carrier 600. At this time, the external process gas is transported into the interior of the first plasma generator 230 from the first gas inlet of the first plasma generator 230. The first plasma generator 230 works and reacts with the process gas and ionizes it to generate plasma. The plasma flows out from the first gas outlet of the first plasma generator 230 along with the gas, and then passes through the first connecting port 210 and flows to Inside the reaction chamber 110, during this process, the exhaust mechanism also cooperates with the first cleaning system to extract the gas inside the reaction chamber 110 through the first exhaust port 220, so that the ions can follow the gas and flow from the upper side of the first end 111 of the reaction chamber 110 to the lower side of the second end 112 of the reaction chamber 110, so that the plasma can flow along the length direction of the reaction chamber 110 and fill the entire reaction chamber 110, and make the silicon wafer coating carrier 600 completely immersed in the plasma, so that the plasma can evenly clean the silicon wafer coating carrier 600. After the first cleaning system is finished cleaning, the first cleaning system is turned off, and then the second cleaning system is started to clean the silicon wafer coating carrier 600. The external process gas flows into the interior of the second plasma generator 330 from the second air inlet of the second plasma generator 330. The second plasma generator 330 reacts to the process gas to ionize and generate plasma. The plasma flows into the second air outlet of the second plasma generator 330 along with the process gas and passes through the second connecting port 310, and finally enters the interior of the reaction chamber 110. During this process, the exhaust mechanism also cooperates with the second cleaning system. The exhaust mechanism extracts the gas inside the reaction chamber 110 through the second exhaust port 320 alone, so that the ions can follow the gas and flow from the upper side of the second end 112 of the reaction chamber 110 to the lower side of the first end 111 of the reaction chamber 110, so that the plasma can flow along the length direction of the reaction chamber 110 and fill the entire reaction chamber 110. The silicon wafer coating carrier 600 is completely immersed in the plasma, so the plasma can clean the silicon wafer coating carrier 600 more evenly. After the second cleaning system is cleaned, the second cleaning system is turned off, and then the exhaust mechanism is switched on to cooperate with the first cleaning system to clean the silicon wafer coating carrier 600, and the cycle is repeated. The silicon wafer coating carrier 600 is repeatedly cleaned by the exhaust mechanism in cooperation with the first cleaning system and the second cleaning system, so that the plasma can flow through the reaction chamber 110 in both positive and negative directions and repeatedly clean the silicon wafer coating carrier 600, effectively solving the technical problems of the existing dry cleaning equipment for silicon wafer coating carriers, such as unclean local cleaning, difficulty in cleaning dead corners thoroughly, and residual film on the surface, and the cleaning effect is good.

[0037] The silicon wafer coating carrier cleaning device in the present embodiment adopts a structure mainly composed of a cleaning device body 100, a first cleaning system, a second cleaning system and an exhaust mechanism. Therefore, the silicon wafer coating carrier cleaning device in the present embodiment can repeatedly clean the silicon wafer coating carrier 600 by using a structure in which the exhaust mechanism cooperates with the first cleaning system and a structure in which the exhaust mechanism cooperates with the second cleaning system, thereby enabling the plasma generated by the first plasma generator 230 and the plasma generated by the second plasma generator 330 to flow in opposite directions to repeatedly clean the silicon wafer coating carrier 600, effectively solving the problem of existing silicon wafer coating carrier dry cleaning equipment in cleaning. The technical problems of uneven local cleaning and inadequate cleaning of dead corners during the washing process have been solved, which greatly improves the cleaning effect of the silicon wafer coating carrier 600. Moreover, the silicon wafer coating carrier cleaning equipment of this embodiment directly ionizes the process gas to generate plasma by using the first plasma generator 230 and the second plasma generator 330, and then transports the plasma into the reaction chamber 110 to clean the silicon wafer coating carrier 600. Therefore, there is no need to arrange a complex gas path layout and electrode structure inside the reaction chamber 110, and there is no complex electric field, temperature field, and gas field control. Therefore, a silicon wafer coating carrier of this embodiment has a simpler structure and is more convenient to operate.

[0038] Reference Figures 1 to 5 In order to make the plasma flow better and fill the entire reaction chamber 110, in some embodiments of the present utility model, the first cleaning system further includes a first exhaust guide plate 240, a plurality of first air holes are arranged on the surface of the first exhaust guide plate 240, the first exhaust guide plate 240 is located inside the reaction chamber 110, and the first exhaust guide plate 240 covers the first exhaust port 220. Specifically, the first exhaust guide plate 240 is installed on the inner bottom wall of the first end 111 of the reaction chamber 110, and the first exhaust guide plate 240 covers the first exhaust port 220. The second cleaning system further includes a second exhaust guide plate 340, a plurality of second air holes are arranged on the surface of the second exhaust guide plate 340, the second exhaust guide plate 340 is located inside the reaction chamber 110, and the second exhaust guide plate 340 covers the second exhaust port 320. Specifically, the second exhaust guide plate 340 is installed on the inner bottom wall of the second end 112 of the reaction chamber 110, and the second exhaust guide plate 340 covers the second exhaust port 320.

[0039] By adopting the above-mentioned structure, when the exhaust mechanism extracts the gas inside the reaction chamber 110 through the first exhaust port 220 or the second exhaust port 320 alone, the first exhaust guide plate 240 or the second exhaust guide plate 340 can make the gas flow more evenly along the length direction of the reaction chamber 110, and then the gas can drive the plasma to flow more evenly and wrap the silicon wafer coating carrier 600 located inside the reaction chamber 110, so that the plasma can clean the silicon wafer coating carrier 600 in all directions, which helps to improve the cleaning effect.

[0040] In order to facilitate the production and assembly of the first exhaust guide plate 240 and the second exhaust guide plate 340, in some embodiments of the present invention, the first exhaust guide plate 240 and the second exhaust guide plate 340 are two plates with the same structure. Specifically, the first exhaust guide plate 240 and the second exhaust guide plate 340 both include a long strip-shaped guide plate body 400, and the two ends of the guide plate body 400 are respectively provided with a cross bar portion 401 extending toward the outside of the same side of the guide plate body 400. When the first exhaust guide plate 240 and the second exhaust guide plate 340 are installed at the first end 111 and the second end 112 of the reaction chamber 110 in a one-to-one correspondence, the first exhaust guide plate 240 is located at the first end 111 of the reaction chamber 110, and the cross bar portion 401 of the first exhaust guide plate 240 faces the second end 112 of the reaction chamber 110; the second exhaust guide plate 340 is located at the second end 112 of the reaction chamber 110, and the cross bar portion 401 of the second exhaust guide plate 340 faces the first end 111 of the reaction chamber 110. By adopting the above structure, the production of the first exhaust guide plate 240 and the second exhaust guide plate 340 is facilitated, and the installation of the first exhaust guide plate 240 and the second exhaust guide plate 340 in the reaction chamber 110 is also facilitated.

[0041] In order to allow the plasma to better flow and wrap around the silicon wafer coating carrier 600 to be cleaned, in certain embodiments of the present invention, the first connecting port 210 and the second connecting port 310 are both located on the upper side of the reaction chamber 110, and the first exhaust port 220 and the second exhaust port 320 are both located on the lower side of the reaction chamber 110. Specifically, the first exhaust port 220 is opened on the lower side of the second end 112 of the reaction chamber 110, and the second exhaust port 320 is opened on the lower side of the first end 111 of the reaction chamber 110. The first exhaust guide plate 240 covers the first exhaust port 220, and the second exhaust guide plate 340 covers the second exhaust port 320. At this time, the first exhaust guide plate 240 and the second exhaust guide plate 340 enclose an area for placing the silicon wafer coating carrier 600 to be cleaned. By adopting the above structure, an area for placing the silicon wafer coating carrier 600 is formed between the first exhaust guide plate 240 and the second exhaust guide plate 340, and the silicon wafer coating carrier 600 to be cleaned is placed in the above area. When the exhaust mechanism extracts the gas inside the reaction chamber 110 through the first exhaust port 220 or the second exhaust port 320 alone, the gas can drive the plasma to flow more evenly through the above area, and the plasma can cover and wrap the entire silicon wafer coating carrier 600, so the plasma can clean the silicon wafer coating carrier 600 in all directions.

[0042] Furthermore, in order to simplify the structure of the first exhaust guide plate 240 and the second exhaust guide plate 340, in certain embodiments of the present invention, the guide plate body 400 and the two cross bar portions 401 are an integrated structure, and a recessed groove 410 extending to the two cross bar portions 401 is provided on the surface of the guide plate body 400, and a plurality of through holes are provided at intervals on the bottom wall of the recessed groove 410. By adopting the above-mentioned structure, the production and processing of the first exhaust guide plate 240 and the second exhaust guide plate 340 are facilitated, which helps to reduce the production cost of the first exhaust guide plate 240 and the second exhaust guide plate 340. Moreover, when the first exhaust guide plate 240 and the second exhaust guide plate 340 are installed inside the reaction chamber 110, when the exhaust mechanism extracts the gas inside the reaction chamber 110 through the first exhaust port 220 or the second exhaust port 320 alone, the first exhaust guide plate 240 and the second exhaust guide plate 340 can better guide the gas to drive the plasma to flow through the area where the silicon wafer coating carrier 600 is placed, so that the plasma can clean the silicon wafer coating carrier 600 more evenly.

[0043] Reference Figure 1 , Figure 3 and Figure 4In order to enable the plasma to flow along the gas better and fill the entire reaction chamber 110, in some embodiments of the present invention, the first connecting port 210 is covered with a first gas distribution plate 211, and the second connecting port 310 is covered with a second gas distribution plate 311. Specifically, the first gas distribution plate 211 and the second gas distribution plate 311 are arranged along the width direction of the reaction chamber 110, and the length of the first gas distribution plate 211 and the length of the second gas distribution plate 311 are substantially the same as the width of the reaction chamber 110, or the length of the first gas distribution plate 211 and the length of the second gas distribution plate 311 are substantially the same as the width of the reaction chamber 110. The length is slightly smaller than the width of the reaction chamber 110. Therefore, when the gas drives the plasma to enter the reaction chamber 110 from the first connecting port 210 or the second connecting port 310, the first gas distribution plate 211 or the second gas distribution plate 311 can make the gas drive the plasma to be distributed and diffused along the width direction of the reaction chamber 110, and then the gas drives the plasma to flow along the length direction of the reaction chamber 110, so that the plasma can flow and fill the entire reaction chamber 110, so that the plasma completely surrounds the cleaning silicon wafer coating carrier 600, and the cleaning effect is good. In certain embodiments of the utility model, the above-mentioned first gas distribution plate 211 and the second gas distribution plate 311 both include a plate, and a plurality of pores are evenly opened on the plate. Since the first gas distribution plate 211 and the second gas distribution plate 311 are conventional technologies in the art, they are not repeated here.

[0044] In some embodiments of the present invention, a first gas distribution plate 211 and a second gas distribution plate 311 are provided at both ends of the reaction chamber 110 in a one-to-one correspondence; the first gas distribution plate 211 and the inner side wall of the first end 111 of the reaction chamber 110 are sealed to form a first gas cavity, and the first connecting port 210 is connected to the inside of the first gas cavity; the second gas distribution plate 311 and the inner side wall of the second end 112 of the reaction chamber 110 are sealed to form a second gas cavity, and the second connecting port 310 is connected to the inside of the second gas cavity. By adopting the above structure, after the gas drives the plasma to flow into the first gas cavity from the first connecting port 210, the gas drives the plasma to diffuse uniformly from the first gas distribution plate 211 to the inside of the reaction chamber 110, or the gas drives the plasma to flow into the second gas cavity from the second connecting port 310, and then the gas drives the plasma to diffuse uniformly from the second gas distribution plate 311 to the inside of the reaction chamber 110.

[0045] Reference Figure 1In order to simplify the structure of the air extraction mechanism, in some embodiments of the present utility model, the air extraction mechanism includes a first valve body 510, a second valve body 520 and an air extraction device 530. In this embodiment, the air extraction device 530 is specifically a vacuum pump. Alternatively, the air extraction device 530 can be a reverse air extraction fan. The air extraction device 530 is connected to the first exhaust port 220 through a first pipeline, and the air extraction device 530 is connected to the second exhaust port 320 through a second pipeline. The first valve body 510 is arranged in the first pipeline, and the second valve body 520 is arranged in the second pipeline. By adopting the above structure, when the exhaust mechanism needs to extract the gas inside the reaction chamber 110 through the first exhaust port 220 alone, the first pipeline is opened by the first valve body 510, and the second pipeline is closed by the second valve body 520. At this time, the exhaust device 530 can be started to extract the gas inside the reaction chamber 110 through the first exhaust port 220; if the exhaust mechanism needs to extract the gas inside the reaction chamber 110 through the second exhaust port 320 alone, the first pipeline is closed by the first valve body 510, and the second pipeline is opened by the second valve body 520. At this time, the exhaust device 530 can be started to extract the gas inside the reaction chamber 110 through the second exhaust port 320. The structure is simple and convenient.

[0046] It should be noted that, in the above embodiment, the exhaust mechanism adopts a structure in which a vacuum device 530 cooperates with the first valve body 510 and the second valve body 520 to exhaust gas. In other certain embodiments of the present utility model, the exhaust mechanism may also adopt other structures. Specifically, the exhaust mechanism includes two groups of independent vacuum components, each group of vacuum components includes a vacuum device 530, one of which is connected to the first exhaust port 220 through a pipeline, and the other is connected to the second exhaust port 320 through another pipeline. By adopting the above structure, when the exhaust mechanism needs to extract the gas inside the reaction chamber 110 through the first exhaust port 220 or the second exhaust port 320 alone, the vacuum component connected to the first exhaust port 220 or the second exhaust port 320 can be opened accordingly, and the specific structure can be determined according to actual needs.

[0047] Furthermore, in order to enable the plasma to better clean the silicon wafer coating carrier 600 inside the reaction chamber 110, in certain embodiments of the present invention, the cleaning equipment body 100 is provided with a heating device capable of heating the reaction chamber 110, and the reaction chamber 110 is heated and heated by the heating device, so that the reaction chamber 110 is maintained at a set temperature, thereby maintaining the optimal activity of the plasma inside the reaction chamber 110, so that the plasma can clean the silicon wafer coating carrier 600 more efficiently and more thoroughly. The above-mentioned heating device can be installed at any position on the outer wall of the reaction chamber, and can be determined according to actual needs. In certain embodiments of the present invention, the heating device is selected as a resistive heating wire or a quartz heating tube that can generate heat when powered on, and can be freely selected according to actual conditions, and is no longer limited here.

[0048] It should be noted that the number of silicon wafer coating carriers 600 cleaned at one time by a silicon wafer coating carrier cleaning device in certain embodiments of the utility model can be one, two, three or more, depending on actual needs. That is, the number of silicon wafer coating carriers 600 accommodated and placed in the reaction chamber 110 at one time can be one, two, three or more.

[0049] Although examples of the present embodiment have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present embodiment, and the scope of the present embodiment is defined by the claims and their equivalents.

Claims

1. A silicon wafer coating carrier cleaning device, characterized in that: include: A cleaning device body, wherein a reaction chamber for cleaning a silicon wafer coating carrier is disposed inside the cleaning device body, wherein the reaction chamber has a first end and a second end. a first cleaning system, the first cleaning system comprising a first connecting port, a first exhaust port and a first plasma generator, the first connecting port and the first exhaust port being arranged at the first end and the second end of the reaction chamber in a one-to-one correspondence, the first plasma generator being located outside the reaction chamber, the first plasma generator having a first gas inlet and a first gas outlet, the first gas outlet being connected to the first connecting port, one of the first connecting port and the first exhaust port being arranged at the upper side of the reaction chamber, and the other being arranged at the lower side of the reaction chamber; a second cleaning system, wherein the second cleaning system comprises a second communication port, a second exhaust port, and a second plasma generator, wherein the second communication port and the second exhaust port are respectively arranged at the second end and the first end of the reaction chamber, the second plasma generator is located outside the reaction chamber, the second plasma generator has a second gas inlet and a second gas outlet, the second gas outlet is connected to the second communication port, one of the second communication port and the second exhaust port is arranged at the upper side of the reaction chamber, and the other is arranged at the lower side of the reaction chamber; An air extraction mechanism, wherein the air extraction mechanism is connected to the first exhaust port and the second exhaust port; Wherein, when the first cleaning system is started to clean the silicon wafer coating carrier, the exhaust mechanism extracts the gas inside the reaction chamber through the first exhaust port alone; When the second cleaning system is started to clean the silicon wafer coating carrier, the exhaust mechanism extracts the gas inside the reaction chamber through the second exhaust port alone.

2. The silicon wafer coating carrier cleaning device according to claim 1, characterized in that: The first cleaning system comprises a first exhaust guide plate, a plurality of first air holes are spaced apart on the surface of the first exhaust guide plate, the first exhaust guide plate is located inside the reaction chamber, and the first exhaust guide plate covers the first exhaust port; And / or the second cleaning system includes a second exhaust guide plate, a plurality of second air holes are spaced apart on the surface of the second exhaust guide plate, the second exhaust guide plate is located inside the reaction chamber, and the second exhaust guide plate covers the second exhaust port.

3. The silicon wafer coating carrier cleaning device according to claim 2, characterized in that: The first cleaning system includes the first exhaust guide plate, the second cleaning system includes the second exhaust guide plate, the first exhaust guide plate and the second exhaust guide plate each include an elongated guide plate body, and both ends of the guide plate body are respectively provided with a cross bar portion extending toward the outside of the same side of the guide plate body, The first exhaust guide plate is located at the first end of the reaction chamber, and the cross bar portion of the first exhaust guide plate faces the second end of the reaction chamber; The second exhaust guide plate is located at the second end of the reaction chamber, and the cross bar portion of the second exhaust guide plate faces the first end of the reaction chamber.

4. The silicon wafer coating carrier cleaning device according to claim 3, characterized in that: The first exhaust port and the second exhaust port are both located at the lower side of the reaction chamber, the first exhaust guide plate and the second exhaust guide plate cover the first exhaust port and the second exhaust port one by one, and the first exhaust guide plate and the second exhaust guide plate enclose an area for placing a silicon wafer coating carrier to be cleaned.

5. A silicon wafer coating carrier cleaning device according to claim 3 or 4, characterized in that: The deflector body and the two crossbars are an integrated structure. A concave groove extending to the two crossbars is provided on the surface of the deflector body. A plurality of through holes are provided at intervals on the bottom wall of the concave groove.

6. The silicon wafer coating carrier cleaning device according to claim 1, characterized in that: The first communication port is covered with a first gas distribution plate, and the second communication port is covered with a second gas distribution plate.

7. The silicon wafer coating carrier cleaning device according to claim 1, characterized in that: The first gas distribution plate and the second gas distribution plate are respectively arranged at two ends of the reaction chamber; The first gas distribution plate and the inner wall of the reaction chamber are sealed to form a first gas cavity, and the first communication port is connected to the inside of the first gas cavity; The second gas distribution plate and the inner wall of the reaction chamber are sealed to form a second gas cavity, and the second communication port is communicated with the inside of the second gas cavity.

8. The silicon wafer coating carrier cleaning device according to claim 1, characterized in that: The air extraction mechanism includes a first valve body, a second valve body and an air extraction device. The air extraction device is connected to the first exhaust port through a first pipe, and the air extraction device is connected to the second exhaust port through a second pipe. The first valve body is arranged in the first pipe, and the second valve body is arranged in the second pipe.

9. The silicon wafer coating carrier cleaning device according to claim 1, characterized in that: The exhaust mechanism includes two groups of independent exhaust components, each group of the exhaust components includes an exhaust device, one of the exhaust devices is connected to the first exhaust port through a pipeline, and the other exhaust device is connected to the second exhaust port through another pipeline.

10. The silicon wafer coating carrier cleaning device according to claim 1, characterized in that: The cleaning equipment body is provided with a heating device capable of heating the reaction chamber.

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