Carbon film sputtering silicon carbide slide tray device
By increasing the incision angle of the pick-and-place sheet gap and groove on the ULVAC device slide tray and optimizing the depth of the tray groove, the problem of the slide tray during the pick-and-place sheet and film formation process is solved, and the product yield and film thickness uniformity are improved.
Patent Information
- Application Number
- CN202421670762.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-15
- Publication Date
- 2025-05-16
- Estimated Expiration
- 2034-07-15
AI Technical Summary
The existing ULVAC equipment slide tray is prone to scratches and slides when picking up and putting the slides. There is a step-like height difference between the wafer surface and the slide tray surface, resulting in thin film thickness, and the small groove depth of the slide tray causes the slide to slide out.
A carbon film sputtered silicon carbide slide tray device was designed, which increased the incision angle of the pick-up and placement sheet gaps and grooves, and optimized the depth and position of the pallet grooves to solve the problems of the slide tray in the pick-up and placement sheet and film formation process.
By increasing the incision angle of the gap and groove, the risk of scratches and slips of the slide tray when picking and laying the slide is reduced, the step-like height difference between the wafer surface and the slide tray surface is avoided, the film thickness uniformity is improved, and the depth of the slide tray is increased to prevent the slide from slipping out.
Smart Images
Figure CN222878072U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of wafer carrier trays, in particular to a carbon film sputtering silicon carbide wafer carrier tray device. Background Art
[0002] In the prior art, there is no notch at the wafer taking-out position of the wafer tray of the ULVAC equipment, which can easily cause the wafer to be scratched or slipped when taking and placing the wafer. In addition, there is a step-like height difference between the wafer surface and the wafer tray surface of the existing ULVAC equipment wafer tray, which causes the film thickness to be thinner in the area about 6mm away from the edge of the wafer during sputtering; the groove depth of the ULVAC equipment wafer tray is small, which can easily cause the wafer to slip out during the transfer process. Utility Model Content
[0003] In view of the defects in the prior art, the utility model aims to provide a carbon film sputtering silicon carbide wafer tray device.
[0004] According to the utility model, a carbon film sputtering silicon carbide wafer tray device is provided, which includes a tray, a wafer picking and placing notch, a groove inscribed angle and a tray groove. The tray is respectively provided with a wafer picking and placing notch and a tray groove, the wafer picking and placing notch is connected to the tray groove, and the tray groove is provided with a groove inscribed angle.
[0005] Preferably, the degree of the internal cutting angle of the groove is 30-60°.
[0006] Preferably, the incision angle of the groove is 45°.
[0007] Preferably, the pick-and-place sheet notch is located on one side of the tray.
[0008] Preferably, the width of the notch of the access plate is 20-40 mm, the length is 15-25 mm, and the depth is 1-2 mm.
[0009] Preferably, the notch of the access plate has a width of 30 mm, a length of 20 mm, and a depth of 1.5 mm.
[0010] Preferably, the total depth of the groove incision angle and the tray groove is 700um.
[0011] Preferably, the depth of the groove incision angle is 350 um.
[0012] Preferably, the depth of the tray groove is 350 um.
[0013] Preferably, the tray groove is located in the middle of the tray.
[0014] Compared with the prior art, the utility model has the following beneficial effects:
[0015] The utility model increases the notch, solves the risk of the wafer slipping out of the wafer carrier tray when taking and placing, reduces the possibility of scratches, and thus improves the product yield; by adding a cut corner in the groove, solves the problem of thin film thickness at the edge of the wafer during film formation caused by deepening the groove of the wafer carrier tray; by deepening the depth of the wafer carrier tray, solves the problem of the wafer being unable to be placed on the wafer carrier tray due to excessive warping after injection. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Other features, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments with reference to the following drawings:
[0017] Figure 1 It is a top view of the utility model;
[0018] Figure 2 for Figure 1 Middle AA section view.
[0019] Numbers in the figure: notch for taking and placing the sheet 1, inner corner of the groove 2, tray groove 3. DETAILED DESCRIPTION
[0020] The utility model is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the utility model, but do not limit the utility model in any form. It should be pointed out that for those of ordinary skill in the art, several changes and improvements can be made without departing from the concept of the utility model. These all belong to the protection scope of the utility model.
[0021] Example
[0022] According to a carbon film sputtering silicon carbide wafer tray device provided by the utility model, Figure 1-2 As shown, it includes a tray, a pick-up and placement sheet notch 1, a groove inscribed corner 2 and a tray groove 3. The tray is provided with a pick-up and placement sheet notch 1 and a tray groove 3 respectively. The pick-up and placement sheet notch 1 is connected to the tray groove 3. The tray groove 3 is located in the middle of the tray. The tray groove 3 is provided with a groove inscribed corner 2.
[0023] A notch 1 with a width of 30mm, a length of 20mm, and a depth of 1.5mm is added on one side of the tray to facilitate the use of a wafer clamp to clamp the wafer, and to avoid the risk of scratching the wafer or slipping out of the wafer tray when placing and taking the wafer. The total depth of the groove incision angle 2 and the tray groove 3 is 700um, which can prevent the wafer from slipping out of the groove of the wafer tray due to excessive warping. Theoretically, it can meet the needs of wafers with a warping degree of less than 350um. The depth of the groove incision angle 2 is 350um, and the depth of the tray groove 3 is 350um. The degree of the cutting angle of the groove incision 2 is 45°, which can avoid the formation of a step-like height difference between the wafer surface and the wafer tray surface, thereby reducing the thin area of the wafer from about 6mm from the edge to about 2mm from the edge.
[0024] More specifically, when the carbon film sputtering machine is performing the process, carbon atoms are naturally deposited on the surface of the wafer. Because the groove depth of the wafer tray is 700um and the wafer thickness is 350um, there is a step-like height difference between the wafer surface and the wafer tray surface, which causes the film thickness to be thinner in the area about 6mm from the edge of the wafer (the effective band of the wafer is about 4mm from the edge); the groove depth of 700um is changed to a groove depth of 350um and a cutting angle of 350um, with a cutting angle of 45°, which can avoid the formation of a step-like height difference between the wafer surface and the wafer tray surface, thereby reducing the thin wafer area from about 6mm from the edge to about 2mm from the edge (the effective band of the wafer is about 4mm from the edge).
[0025] The wafer thickness is about 350um, and the original wafer tray groove is 350um deep. If the wafer is deformed (warpage increases) due to the previous process, the edge of the wafer cannot be stuck in the inner extension of the wafer tray groove, which causes the wafer to slip out of the wafer tray groove during mechanical transfer, and eventually causes abnormal wafer film thickness, scratches or breakage. Deepening the wafer tray groove to 700um can avoid the wafer slipping out of the wafer tray groove due to excessive warpage, and theoretically can meet the needs of wafers with a warpage of less than 350um.
[0026] In the description of the present application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0027] The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various changes or modifications within the scope of the claims, which does not affect the essence of the present invention. In the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other at will.
Claims
1. A carbon film sputtering silicon carbide wafer tray device, characterized in that: The invention comprises a tray, a pick-up and placement notch (1), a groove inscribed angle (2) and a tray groove (3), wherein the pick-up and placement notch (1) and the tray groove (3) are respectively provided on the tray, the pick-up and placement notch (1) is connected to the tray groove (3), and the groove inscribed angle (2) is provided on the tray groove (3).
2. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 1, characterized in that: The degree of the incision angle (2) of the groove is 30-60°.
3. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 2, characterized in that: The degree of the incision angle (2) of the groove is 45°.
4. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 1, characterized in that: The pick-and-place sheet notch (1) is located on one side of the tray.
5. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 1, characterized in that: The notch (1) for taking and placing the plate has a width of 20-40 mm, a length of 15-25 mm, and a depth of 1-2 mm.
6. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 5, characterized in that: The pick-and-place notch (1) has a width of 30 mm, a length of 20 mm and a depth of 1.5 mm.
7. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 1, characterized in that: The total depth of the groove incision angle (2) and the tray groove (3) is 700 um.
8. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 7, characterized in that: The depth of the groove incision angle (2) is 350 um.
9. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 7, characterized in that: The depth of the tray groove (3) is 350 um.
10. The carbon film sputtering silicon carbide wafer carrier tray device according to claim 1, characterized in that: The tray groove (3) is located in the middle of the tray.