Reactor

Abstract

The utility model belongs to the technical field of semiconductors, and particularly relates to a reactor. The reactor comprises a reaction tube and a first thermocouple, the tube wall of the reaction tube is recessed inwards to form a slot, the inside of the reaction tube is used for placing a silicon wafer, the first thermocouple is provided with a first measuring part, the first measuring part is inserted into the slot, and the first thermocouple is used for measuring the temperature of the silicon wafer. By using the reactor in the technical scheme, the risk of toxic and harmful gas leakage caused by installation of the first thermocouple is avoided. And moreover, the first thermocouple is mounted on the outer side of the reaction tube, and excessive pressure cannot be applied to the first thermocouple in the mounting process, so that the first thermocouple is prevented from being damaged, the mounting process is safe and efficient, a protective tube is not needed, the overall reliability is improved, and the cost is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a reactor. Background Art

[0002] In the silicon wafer manufacturing process, controlling the temperature of the silicon wafer is the key to ensuring the quality of the silicon wafer. Measuring the temperature of the silicon wafer in a high-temperature vacuum environment is a difficult point, and the temperature of the silicon wafer is usually measured by the first thermocouple. During the silicon wafer production process, gaseous oxygen and hydrogen are transported into the reaction tube, and the waste gas generated by the reaction contains many toxic and harmful substances, such as silicon dioxide, silicon chloride, silicon trichloride, etc.

[0003] In the prior art, the thermocouple is installed on the inner side of the reaction tube, and the wire used to connect the thermocouple and the temperature controller passes through the wall of the reaction tube, which leads to leak points at the wire outlet on the reaction tube. The gas escapes into the air through the leak point, causing air pollution and even casualties in serious cases. In addition, the built-in thermocouple is made of quartz and is relatively long. Installing the thermocouple on the inner wall of the reaction tube is prone to cause the thermocouple to break, which in turn causes the quartz powder on the thermocouple to fall off and pollute the reaction chamber. After the reaction tube is contaminated, it needs to be replaced with a new reaction tube or cleaned and dried before it can be used again, which seriously affects the production cycle. In order to avoid damage to the built-in thermocouple, a protective tube needs to be set, which increases the complexity of assembly and is costly.

[0004] Therefore, it is urgent to propose a reactor to solve the above problems. Utility Model Content

[0005] The purpose of the utility model is to at least solve the problem that the first thermocouple causes the reaction tube to be easily leaked and easily contaminated. This purpose is achieved through the following technical solutions:

[0006] The first aspect of the utility model provides a reactor, comprising:

[0007] A reaction tube, wherein the tube wall of the reaction tube is recessed inwardly to form a slot, and the interior of the reaction tube is used to place a silicon wafer;

[0008] A first thermocouple, wherein the first thermocouple has a first measuring part, the first measuring part is inserted into the slot, and the first thermocouple is used to measure the temperature of the silicon wafer.

[0009] Using the reactor in the technical solution, the first measuring part of the first thermocouple is inserted into the slot on the side wall of the reaction tube, so that the first thermocouple is placed outside the reaction tube and the temperature of the silicon wafer is measured. Compared with the setting of the thermocouple built into the reaction tube in the prior art, the first thermocouple in this embodiment does not need to penetrate the reaction tube, so there is no leakage point on the side wall of the reaction tube, and there is no risk of toxic and harmful gas leakage due to the installation of the first thermocouple. In addition, the first thermocouple is installed on the outside of the reaction tube. During the installation process, excessive pressure will not be applied to the first thermocouple, effectively avoiding the breakage of the first thermocouple. The installation process is safe and efficient, so there is no need to install a protective tube, and there is no risk of chemical reaction with the process gas and contaminating the silicon wafer due to the fragility of the protective tube, which improves the overall reliability and reduces the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] By reading the detailed description of the preferred embodiment below, various other advantages and benefits will become clear to those of ordinary skill in the art. The accompanying drawings are only used for the purpose of illustrating the preferred embodiment and are not to be considered as limiting the present invention. Moreover, the same reference numerals are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0011] Figure 1 It is a structural schematic diagram of the reactor provided by the utility model;

[0012] Figure 2 It is a cross-sectional schematic diagram of the reactor provided by the utility model;

[0013] Figure 3 It is a partial structural schematic diagram of the reactor provided by the utility model;

[0014] Figure 4 It is a partial structural cross-sectional schematic diagram of the reactor provided by the utility model;

[0015] Figure 5 It is a working principle diagram of the reactor provided by the utility model.

[0016] In the figure:

[0017] 100, reaction tube; 110, slot; 200, first thermocouple; 300, second thermocouple; 400, heating assembly; 500, quartz boat; 600, temperature controller; 1000, silicon wafer. DETAILED DESCRIPTION

[0018] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0019] It should be understood that the terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "include", "comprise", "contain", and "have" are inclusive, and therefore specify the existence of stated features, steps, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not interpreted as necessarily requiring them to be performed in the specific order described or illustrated, unless the execution order is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0020] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0021] For ease of description, spatial relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figure, such as "inside", "outside", "inner side", "outer side", "below", "below", "above", "above", etc. Such spatial relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is turned over, then the elements described as "below other elements or features" or "below other elements or features" will subsequently be oriented as "above other elements or features" or "above other elements or features". Therefore, the example term "below..." can include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or in other directions) and the spatial relative descriptors used in the text are interpreted accordingly.

[0022] See also Figure 1 and Figure 2 This embodiment provides a reactor, including a reaction tube 100 and a first thermocouple 200. The tube wall of the reaction tube 100 is recessed inward to form a slot 110. The interior of the reaction tube 100 is used to place a silicon wafer 1000. The first thermocouple 200 has a first measuring part, which is inserted into the slot 110. The first thermocouple 200 is used to measure the temperature of the silicon wafer 1000.

[0023] The reactor is provided with a slot 110 on the side wall of the reaction tube 100, and the first measuring part of the first thermocouple 200 is inserted into the slot 110, so that the first thermocouple 200 is placed outside the reaction tube 100 and the temperature of the silicon wafer 1000 is measured. Compared with the setting of the thermocouple built into the reaction tube 100 in the prior art, the first thermocouple 200 in this embodiment does not need to penetrate the reaction tube 100, so there is no leakage point on the side wall of the reaction tube 100, and there is no risk of leakage of toxic and harmful gases due to the installation of the first thermocouple 200. In addition, the first thermocouple 200 is installed on the outside of the reaction tube 100, and during the installation process, excessive pressure will not be applied to the first thermocouple 200, which effectively avoids the damage of the first thermocouple 200, and the installation process is safe and efficient, so there is no need to install a protective tube, and there is no risk of chemical reaction with the process gas due to the fragility of the protective tube to contaminate the silicon wafer 1000, which improves the overall reliability and reduces the cost.

[0024] In some embodiments, the material of the reaction tube 100 may be silicon carbide, which has high hardness, high temperature resistance, wear resistance and other characteristics, and can be applied to production occasions with higher requirements. In another embodiment, the reaction tube 100 is made of quartz material, which has very high stability, and is less affected by factors such as temperature changes, chemical corrosion, and mechanical shock. It can work stably for a long time and can meet the requirements of severe environments such as high temperature, high pressure, and corrosion in the polysilicon manufacturing process, ensuring the quality and production efficiency of polysilicon manufacturing. In other embodiments, the material of the reaction tube 100 may also be silicon, which has very stable chemical properties, is not corroded by common substances such as acid, alkali, water, and oxygen, and can remain stable for a long time in harsh environments.

[0025] Optionally, one end of the first thermocouple 200 inserted into the slot 110 is in the shape of an elongated rod, and optionally, the first measuring part is located at the end of the insertion end of the first thermocouple 200. Optionally, the first measuring part contacts the bottom of the slot 110, so that effective heat transfer can be performed.

[0026] Alternatively, see Figure 1 , the reactor also includes a temperature controller 600, the first thermocouple 200 and the temperature controller 600 are connected by signal, the measurement data of the first thermocouple 200 will be sent to the temperature controller 600, and the compensation value will be obtained in the temperature controller 600, so as to obtain a more accurate measurement result. The setting of the temperature controller 600, the connection between the temperature controller 600 and the first thermocouple 200, and the correction of the measurement data of the first thermocouple 200 by the temperature controller 600 are mature prior arts in this field, and no further explanation is given here. The structure in this embodiment does not need to manually input the compensation value to the temperature controller 600, which effectively shortens the response speed. Since the response speed of the first thermocouple 200 is faster, the temperature control of the heating component 400 is also faster, which effectively ensures the improvement of the temperature stability rate inside the reaction tube 100, thereby improving the production quality of the silicon wafer 1000.

[0027] Further, the slot 110 extends in the radial direction of the reaction tube 100, so that the first thermocouple 200 is inserted into the slot 110 in the radial direction of the reaction tube 100. By setting the slot 110 to extend in the radial direction of the reaction tube 100, the first measuring portion of the first thermocouple 200 is as close to the silicon wafer 1000 as possible, thereby obtaining a measurement value closest to the temperature of the silicon wafer 1000 and reducing the measurement error as much as possible.

[0028] Further, a plurality of first thermocouples 200 are provided, and the plurality of first thermocouples 200 are arranged at intervals along the length direction of the reaction tube 100. In the present embodiment, the number of the first thermocouples 200 is 5. In other embodiments, the number of the first thermocouples 200 may also be 2, 3, 4 or 6, etc. Of course, in some embodiments, the number of the first thermocouples 200 may also be 1, which is specifically set according to the use needs and is not specifically limited here. It can be understood that the number of slots 110 is set according to the number of the first thermocouples 200. Optionally, the intervals of the first thermocouples 200 along the length direction of the reaction tube 100 are set according to the length of the reaction tube 100, so as to ensure that the first thermocouples 200 can obtain the temperature of the silicon wafer 1000 at each position, and by controlling the heating temperature, the measured value of each first thermocouple 200 is kept the same, thereby controlling the temperature balance of the silicon wafer 1000 and ensuring the production efficiency of the silicon wafer 1000.

[0029] Optionally, the first thermocouple 200 is a screw-type thermocouple. The screw-type thermocouple is an assembled thermocouple produced in accordance with the international IEC (International Electrotechnical Commission) standard. The screw-type thermocouple includes components such as a temperature sensing element, a mounting fixture, and a junction box. The screw thermocouple can be tightened on the furnace body 400 by connecting bolts, which is convenient to connect and will not cause damage to the surface of the thermocouple during installation.

[0030] Further, the length of the first thermocouple 200 inserted in the slot 110 is greater than or equal to 10 mm. Exemplarily, the length of the first thermocouple 200 inserted in the slot 110 can be 10 mm, 11 mm, 12 mm, 13 mm or 14 mm, etc. It can be understood that in order to make the first measuring part close to the silicon wafer 1000, the first thermocouple 200 is lengthened compared with the prior art. Of course, the length of the first thermocouple 200 inserted in the slot 110 is set according to the thickness of the side wall of the furnace body 400 and the distance from the reaction tube 100 to the silicon wafer 1000. In addition, the depth of the slot 110 is set according to the distance from the reaction tube 100 to the silicon wafer 1000.

[0031] Further, the diameter of the slot 110 is greater than or equal to 0.1mm, and the diameter of the portion of the first thermocouple 200 inserted into the slot 110 is greater than or equal to 0.1mm. The insertion end of the first thermocouple 200 is in the shape of an elongated needle, and the slot 110 is a columnar groove. It can be understood that the diameter of the slot 110 is set according to the diameter of the portion of the first thermocouple 200 inserted into the slot 110 to ensure that the first thermocouple 200 can be inserted into the slot 110. Exemplarily, the diameter of the portion of the first thermocouple 200 inserted into the slot 110 can be 0.1mm, 0.2mm, 0.3mm or 0.4mm, etc. Exemplarily, the diameter of the slot 110 can be 0.1mm, 0.2mm, 0.3mm or 0.4mm, etc.

[0032] Optionally, a plurality of silicon wafer assemblies are arranged in the reaction tube 100, each silicon wafer assembly includes a plurality of silicon wafers 1000, and the plurality of silicon wafer assemblies are arranged along the length direction of the reaction tube 100. Optionally, the positions of the first thermocouples 200 correspond to the positions of the silicon wafer assemblies one by one, so that each first thermocouple 200 measures the temperature of a group of silicon wafer assemblies.

[0033] Optionally, a quartz boat 500 is provided in the reaction tube 100, and the silicon wafer 1000 is placed on the quartz boat 500. The quartz boat 500 is a common tool for manufacturing semiconductor devices, has good stability and thermal conductivity, can work in a high temperature environment, has good corrosion resistance, and can well maintain the temperature of the silicon wafer 1000.

[0034] Further, see Figure 3 and Figure 4 , a second thermocouple 300 is arranged on the furnace body 400, and the second thermocouple 300 is located outside the reaction tube 100. The second thermocouple 300 is used to measure the temperature of the outer wall of the reaction tube 100 to prevent the temperature of the reaction tube 100 from being too high. The second thermocouple 300 has a second measuring part, and the second measuring part is in contact with the outer wall of the reaction tube 100. Optionally, the second thermocouple 300 is connected to the temperature controller 600 by signal, and the second thermocouple 300 sends the measured temperature data of the outer wall of the reaction tube 100 to the temperature controller 600. The temperature controller 600 monitors the temperature of the reaction tube 100 in real time and controls the temperature of the reaction tube 100 according to the data to prevent the temperature of the reaction tube 100 from being too high. Optionally, the second thermocouple 300 can be a K-type thermocouple, which has good anti-oxidation performance and is suitable for continuous use in an oxidizing and inert environment. The long-term use temperature is 1000°C, and it has a wide range of applicability.

[0035] Optionally, there are multiple second thermocouples 300, which are spaced apart along the length direction of the reaction tube 100. By providing multiple second thermocouples 300, the temperature at different positions of the reaction tube 100 can be measured to ensure the accuracy of the measurement, and at the same time, the local temperature of the reaction tube 100 is prevented from being too high.

[0036] Further, the inner wall of the reaction tube 100 is provided with a heating assembly 400, and the heating assembly 400 is used to heat the inside of the reaction tube 100. Optionally, the heating assembly 400 includes a plurality of heating wires. In some embodiments, the heating wires may extend along the length direction of the reaction tube 100, and the plurality of heating wires are arranged at intervals along the circumference of the reaction tube 100. In other embodiments, the heating wires may be arranged along the circumference of the reaction tube 100, and the plurality of heating wires are arranged at intervals along the length direction of the reaction tube 100. It is understandable that the arrangement of the heating wires should ensure that the temperatures of the silicon wafers 1000 at different positions synchronously reach the same temperature value or process temperature value.

[0037] Optionally, the outer wall of the reaction tube 100 is provided with a heat-insulating layer, the heating wire is embedded in the heat-insulating layer, and the first measuring part of the first thermocouple 200 passes through the heat-insulating layer and is inserted into the slot 110 .

[0038] Further, a evacuation hole is provided on the insulation layer, and the first measuring portion of the first thermocouple 200 passes through the evacuation hole and is inserted into the slot 110. It can be understood that the diameter of the evacuation hole on the furnace body 400 is set according to the diameter of the insertion end of the first thermocouple 200 to ensure that the first thermocouple 200 can be inserted into the evacuation hole. Optionally, the axial direction of the evacuation hole extends along the radial direction of the reaction tube 100, and the first thermocouple 200 passes through the first evacuation hole along the radial direction of the reaction tube 100.

[0039] See also Figure 5 The working principle of the reactor is as follows: the temperature controller 600 controls the heating of the heating component 400, and corrects the measurement data of the first thermocouple 200 to obtain the temperature of the silicon wafer 1000. The measurement value of the first thermocouple 200 is transmitted to the temperature controller 600, so that the temperature controller 600 adjusts the temperature of the heating component 400 according to the measurement data of the first thermocouple 200.

[0040] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the implementation methods of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the scope of protection of the present invention. It is not necessary and impossible to list all implementation methods here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention shall be included in the scope of protection of the claims of the present invention.

Claims

1. A reactor, characterized in that: include: A reaction tube (100), wherein the tube wall of the reaction tube (100) is recessed inwardly to form a slot (110), and the interior of the reaction tube (100) is used to place a silicon wafer (1000); A first thermocouple (200), wherein the first thermocouple (200) has a first measuring portion, the first measuring portion is inserted into the slot (110), and the first thermocouple (200) is used to measure the temperature of the silicon wafer (1000).

2. The reactor according to claim 1, characterized in that The slot (110) extends along the radial direction of the reaction tube (100).

3. The reactor according to claim 1, characterized in that A plurality of the first thermocouples (200) are provided, and the plurality of the first thermocouples (200) are arranged at intervals along the length direction of the reaction tube (100).

4. The reactor according to claim 1, characterized in that The first thermocouple (200) is a screw-type thermocouple.

5. The reactor according to claim 1, characterized in that The length of the first thermocouple (200) inserted in the slot (110) is greater than or equal to 10 mm.

6. The reactor according to claim 1, characterized in that The diameter of the slot (110) is greater than or equal to 0.1 mm, and the diameter of the insertion end of the first thermocouple (200) is greater than or equal to 0.1 mm.

7. The reactor according to claim 1, characterized in that The reactor further comprises a second thermocouple (300), wherein the second thermocouple (300) is located outside the reaction tube (100), and the second thermocouple (300) is used to measure the temperature of the outer wall of the reaction tube (100).

8. The reactor according to claim 7, characterized in that There are a plurality of the second thermocouples (300), and the plurality of the second thermocouples (300) are arranged at intervals along the length direction of the reaction tube (100).

9. The reactor according to any one of claims 1 to 8, characterized in that The outer wall of the reaction tube (100) is provided with a heating component (400), and the heating component (400) comprises a plurality of heating wires.

10. The reactor according to claim 9, characterized in that The outer wall of the reaction tube (100) is provided with a heat-insulating layer, the heating wire is embedded in the heat-insulating layer, and the first measuring part of the first thermocouple (200) passes through the heat-insulating layer and is inserted into the slot (110).

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