Layering assembly for use in controlled atmosphere chamber

Abstract

A layered assembly for use in a controlled atmosphere chamber includes a plurality of substrates and an electrically functional layer embedded between two adjacent substrates of the plurality of substrates, the electrically functional layer being a material configured to secure the two adjacent substrates together using a solid state bonding process. The electrical termination region is integral with the electrically functional layer, and a peripheral sealing tape is embedded between the inner surfaces of the two adjacent substrates and extends around the periphery of the inner surfaces of the two adjacent substrates, the peripheral sealing tape being a material configured to secure and seal the two adjacent substrates together using a solid state bonding process. Dielectric regions exist between the two adjacent substrates and between the edge boundaries of the electrical functional layers, and the dielectric regions are sealed between the two adjacent substrates through peripheral sealing strips.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of U.S. Provisional Application No. 63 / 310,448, filed on February 15, 2022. The disclosure of the above application is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to susceptors and chucks for use in semiconductor manufacturing equipment, and more particularly to methods of making such susceptors and chucks having embedded heaters, RF (radio frequency) antennas, and clamping electrodes. Background Art

[0004] The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.

[0005] In the processing of semiconductor wafers, a susceptor is arranged in a processing chamber to support a semiconductor substrate. The susceptor is usually made of a ceramic material and usually includes a heating plate and a shaft fixed to the lower part of the heating plate. The shaft is hollow and is configured to receive various electrical connections to power the heating plate and monitor various system parameters throughout the manufacturing process.

[0006] Some pedestals also include embedded clamping electrodes that electrostatically secure the semiconductor substrate to the top surface of the pedestal during processing. These types of pedestals are called electrostatic chucks or ESCs and operate at potentials ranging from about 300 to several thousand volts. Other pedestals include embedded RF antennas that couple to an RF power source located between the chamber wall and the pedestal or chuck electrode.

[0007] The environment within the processing chamber can be corrosive due to the types of gases used and the elevated temperatures throughout the deposition, etching, doping and annealing processes. Therefore, the susceptor must be able to withstand these harsh processing environments, as well as the cleaning steps within the chamber after the wafer is removed, while maintaining the integrity of the operating components embedded or disposed therein (i.e., heaters, chucking electrodes, RF antennas, etc.).

[0008] The present disclosure addresses challenges associated with the manufacture of susceptors and other ceramic components that operate in harsh chemical environments. Utility Model Content

[0009] This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.

[0010] In one form of the present disclosure, a layered assembly for use in a controlled atmosphere chamber includes a plurality of substrates, at least one electrical functional layer embedded between two adjacent substrates of the plurality of substrates, at least one electrical termination region integral with the at least one electrical functional layer, and at least one peripheral sealing band embedded between the inner surfaces of the two adjacent substrates and extending around the periphery of the inner surfaces of the two adjacent substrates, the electrical functional layer including a material configured to fix the two adjacent substrates together using a solid bonding process. The at least one peripheral sealing band includes a material configured to fix and seal the two adjacent substrates together using a solid bonding process, and a plurality of dielectric regions exist between the two adjacent substrates and between the edge boundaries of the at least one electrical functional layer, the plurality of dielectric regions being sealed between the two adjacent substrates by the at least one peripheral sealing band.

[0011] In a variation of this layered component, it can be achieved individually or in any combination: the material of the electrical functional layer includes nickel, and in one form, the amount of nickel is greater than 50at%, and in another form, the amount of nickel is greater than 99at%; the material of the peripheral sealing band includes nickel, and in one form, the amount of nickel is greater than 50at%, and in another form, the amount of nickel is greater than 99at%; the material of the electrical functional layer and the material of the peripheral sealing band are the same material; the material of the electrical functional layer and the material of the peripheral sealing band include nickel, and in one form, the amount of nickel is greater than 50at%, and in another form, the amount of nickel is greater than 99at%; the material of the electrical functional layer is graded and along at least The electrical functional layer is selected from the group including a resistive heater, an RF antenna and a clamping electrode; the electrical functional layer is a resistive heater and a temperature sensor; each of the plurality of substrates includes a ceramic material; two adjacent substrates include the same ceramic material; the layered assembly also includes an upper substrate disposed on one of the two adjacent substrates, the upper substrate includes a ceramic material different from the ceramic material of the two adjacent substrates; the two adjacent substrates are aluminum nitride materials, and the upper substrate is a high-grade aluminum nitride material; the plurality of substrates include beryllium oxide (BeO) material; the two adjacent substrates include a plurality of through holes formed therethrough, and the layered assembly also includes a plurality of through holes formed therethrough around the two adjacent substrates. a local sealing band arranged at the periphery of each of the plurality of through holes between the plurality of through holes; the material of the local sealing band comprises nickel, and in one form its amount is greater than 50at%, and in another form its amount is greater than 99at%; the material of the electrical functional layer, the material of the peripheral sealing band and the material of the local sealing band are the same material; further comprising an adhesion layer arranged between at least one of the two adjacent substrates and at least one electrical functional layer; the adhesion layer is also arranged between at least one substrate of the two adjacent substrates and the at least one peripheral sealing band; the layered assembly further comprises two electrical functional layers embedded between two adjacent substrates of the plurality of substrates, each electrical functional layer being applied to the each of the two adjacent substrates; each electrical functional layer includes a trace, and the trace of one electrical functional layer is wider than the trace of the other electrical functional layer; the layered assembly also includes two peripheral sealing bands embedded between two adjacent substrates in the plurality of substrates, each peripheral sealing band being applied to each of the two adjacent substrates before the solid-state bonding process; the bandwidth of one peripheral sealing band is wider than the bandwidth of the other peripheral sealing band; a plurality of material islands are arranged in the dielectric region, wherein the material islands are uncharged; the at least one electrical functional layer is sputtered onto at least one of the two adjacent substrates; the at least one electrical functional layer is a foil material; a shaft, which is fixed to the underside of one of the two adjacent substrates;A bonding layer is disposed between the shaft and the underside of the adjacent substrate, the material of the bonding layer comprising nickel, and in one form, the amount of nickel is greater than 50 at%, and in another form, the amount of nickel is greater than 99 at%; the seal is airtight; the at least one electrical functional layer comprises a resistive heater having a plurality of zones; the plurality of resistive heater zones are disposed in different layers within the plurality of substrates.;

[0012] In another form of the present disclosure, a heater assembly for a semiconductor processing chamber includes an upper substrate, at least two adjacent substrates fixed to the lower surface of the upper substrate, at least one resistive heater embedded between the two adjacent substrates, at least one electrical termination area integral with the at least one resistive heater, and at least one peripheral sealing band embedded between the inner surfaces of the two adjacent substrates and extending around the periphery of the inner surfaces of the two adjacent substrates, at least one resistive heater includes a nickel material, at least two adjacent substrates are fixed to the lower surface of the upper substrate, at least one peripheral sealing band includes a nickel material, and the nickel material is configured to fix and seal the two adjacent substrates together using a solid state bonding process. A plurality of dielectric regions exist between the two adjacent substrates and between the edge boundaries of the resistive heaters, and the plurality of dielectric regions are sealed between the two adjacent substrates by at least one peripheral sealing band. The shaft is fixed to the underside of one of the two adjacent substrates by a bonding layer, and the bonding layer includes a nickel material.

[0013] In a variation of the heater assembly, the RF antenna is embedded between the upper substrate and one of the two adjacent substrates, the RF antenna comprising a nickel material configured to secure the upper substrate and the adjacent substrate together using a solid state bonding process.

[0014] In yet another form, a layered assembly for use in a controlled atmosphere chamber includes at least two adjacent substrates, at least one peripheral sealing band embedded between inner surfaces of the two adjacent substrates and extending around the periphery of the inner surfaces of the two adjacent substrates, the at least one peripheral sealing band comprising a nickel material configured to secure and seal the two adjacent substrates together using a solid state bonding process.

[0015] In yet another form, a heater assembly for use in a semiconductor processing chamber includes a heater plate, a shaft secured to an underside of the heater plate, and at least one peripheral sealing band embedded between and extending around the periphery of the heater plate and inner surfaces of the shaft, the at least one peripheral sealing band comprising a nickel material configured to secure and seal the heater plate and the shaft together using a solid state bonding process.

[0016] According to another form of the present disclosure, a method of forming a layered assembly for use in a controlled atmosphere chamber, the layered assembly comprising a plurality of substrates, the method comprising applying a material to at least one face of two adjacent substrates of the plurality of substrates, the material being patterned into an electrical functional layer and having an integral electrical termination region and a peripheral sealing band disposed around the periphery of the at least one face of the two adjacent substrates, and bonding the plurality of substrates using heat and pressure in a controlled environment so that the material is solid-state bonded to the two adjacent substrates to secure the two adjacent substrates together to form the layered assembly, the layered assembly being sealed. A plurality of dielectric regions are present between the two adjacent substrates within the electrical functional layer, and the plurality of dielectric regions are sealed within the electrical functional layer by a peripheral sealing element.

[0017] In variations of the method, it can be achieved individually or in any combination: patterning a peripheral sealing band in a step separate from patterning the electrical functional layer; patterning the material with a laser; patterning the material with a mask; patterning the material using an additive manufacturing process; patterning the material with an etching process; patterning the material with a water jet; patterning the material with a hybrid laser-water jet; the material is nickel and is subjected to a sputtering process; the nickel material is at least 50at%; the nickel material is at least 99at%; applying the material to both surfaces of the two adjacent substrates; controlling the pressure to adjust the size of the dielectric area; and applying an adhesion layer to at least one surface of the adjacent substrates before applying the material.

[0018] In yet another form of the present disclosure, a layered assembly for use in a controlled atmosphere chamber includes a plurality of substrates, at least one electrical functional layer embedded between two adjacent substrates of the plurality of substrates, and at least one electrical termination region integral with the at least one electrical functional layer, the electrical functional layer including a material configured to fix the two adjacent substrates together using a solid state bonding process. A plurality of dielectric regions exist between the two adjacent substrates and between edge boundaries of the at least one electrical functional layer.

[0019] In a variation of the layered assembly, at least one peripheral sealing band is embedded between two adjacent substrates and extends around the periphery of the inner surfaces of the two adjacent substrates, the at least one peripheral sealing band comprising a material configured to secure and seal the two adjacent substrates together using a solid bonding process, and a plurality of dielectric regions are sealed between the two adjacent substrates by the at least one peripheral sealing band.

[0020] In another form, a method of forming a layered assembly for use in a controlled atmosphere chamber, the layered assembly comprising a plurality of substrates, the method comprising applying a material to at least one side of two adjacent substrates of the plurality of substrates, the material being patterned into an electrically functional layer and having an integral electrical termination region, and bonding the plurality of substrates using heat and pressure in a controlled environment such that the material solid-state bonds to the two adjacent substrates to secure the two adjacent substrates together to form the layered assembly, the layered assembly being sealed within the electrically functional layer and having a plurality of dielectric regions between the two adjacent substrates.

[0021] In a variation of the method, it can be achieved alone or in any combination: the material is applied to at least one surface of the two adjacent substrates, the material is also a peripheral sealing band patterned and arranged around the periphery of the at least one surface of the two adjacent substrates, and the multiple dielectric regions are sealed within the electrical functional layer by the peripheral sealing element; the material is applied to each relative surface of the two adjacent substrates, and the pattern of the electrical functional layer on one relative surface is different from the pattern of the electrical functional layer on the other relative surface; and the electrical functional layer is a resistive heater, and the pattern on one relative surface includes an unheated area.

[0022] Further areas of applicability will become apparent from the description provided herein.It should be understood that the description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order that the present disclosure may be better understood, various forms thereof given by way of example will now be described with reference to the accompanying drawings, in which:

[0024] Figure 1 is a perspective view of a susceptor for use in a semiconductor processing chamber constructed in accordance with the teachings of the present disclosure;

[0025] Figure 2 yes Figure 1 A side view of a base;

[0026] Figure 3 yes Figure 1 An exploded view of the base;

[0027] Figure 4 is constructed according to the teachings of the present disclosure Figure 3 A perspective view of a resistive heater layer;

[0028] Figure 5 yes Figure 4 Top view of the resistive heater layer;

[0029] Figure 6 is constructed according to the teachings of the present disclosure Figure 3A perspective view of the RF antenna layer;

[0030] Figure 7 yes Figure 6 Top view of the RF antenna layer;

[0031] Fig. 8A is along Figure 1 A cross-sectional view taken along line 8A-8A;

[0032] Figure 8B It is taken from Fig. 8A Detailed view of a substrate and layers of a base showing vias extending through the substrate and layers of the base constructed in accordance with the teachings of the present disclosure;

[0033] Fig. 9 is a flow chart of a manufacturing method according to the teachings of the present disclosure;

[0034] Fig. 10A is a top view of a resistive heater layer having a trace pattern constructed according to the teachings of the present disclosure; and

[0035] Fig. 10B is a top view of another resistive heater layer with a different trace pattern. Fig. 10A The resistive heater layers are formed together and constructed according to the teachings of the present disclosure.

[0036] The drawings described herein are for illustration purposes only and are not necessarily drawn to scale, and are not intended to limit the scope of the present disclosure in any way. DETAILED DESCRIPTION

[0037] The following description is merely exemplary in nature and is not intended to limit the present disclosure, application, or uses. It should be understood that throughout the drawings, corresponding reference numerals indicate the same or corresponding parts and features.

[0038] refer to Figure 1-Figure 2, a heater assembly for a semiconductor processing chamber is shown and indicated as a whole by the reference numeral 20. The heater assembly 20 includes an upper substrate 22, at least two adjacent substrates 24 and 26 fixed to the lower surface of the upper substrate 22, and a shaft 28 fixed to the lower side of one of the two adjacent substrates 26. In one form, the upper substrate 22 and each of the two adjacent substrates 24 and 26 are ceramic materials. The ceramic material can be the same for each substrate, or can be different depending on the specific application requirements. For example, in one form, each substrate (substrate 22, substrate 24, substrate 26) and the shaft 28 are aluminum nitride (AlN) materials. In another form, the upper substrate 22 is a high-grade aluminum nitride (AlN) material having different material properties, such as a higher volume resistivity, and each of the two adjacent substrates 24 and 26 and the shaft 28 are aluminum nitride (AlN) materials. In another form, the lower adjacent substrate 26 is a material having a lower thermal conductivity than the other / upper adjacent substrate 24, such as aluminum oxide (Al2O3). 2 O 3 ) material. In another form, each of the upper substrate 22, the two adjacent substrates 24 and 26, and the shaft 28 is a beryllium oxide (BeO) material. These and other variations of the materials used for each substrate (22, 24, 26) and the shaft 28 should be interpreted as falling within the scope of the present disclosure.

[0039] Reference now Figure 3 , at least one electrically functional layer is embedded between the substrates (e.g., substrate 22 / substrate 24 / substrate 26), wherein the electrically functional layer is configured to secure the substrates together using a solid state bonding process, which will be described in more detail below. Advantageously, in one form of the present disclosure, the electrically functional layer has a dual function of securing the substrates together and providing an electrical function within the heater assembly 20, which may include, for example, a resistive heater, an antenna (e.g., an RF antenna), or a clamping electrode, etc. In a more general sense, the teachings of the present disclosure may be applied to any layered assembly (i.e., not limited to the heater assembly 20 as shown and described herein) for use in a controlled atmosphere chamber while remaining within the scope of the present disclosure.

[0040] In one form, the electrical functional layer is a resistive heater 30. This form of the resistive heater 30 is illustrated as two layers 30' and 30", and includes a nickel material. In the manufacturing process described in more detail below, the two layers 30' and 30" are applied to each inner surface 25 and 27 of two adjacent substrates 24 and 26, respectively. However, it should be understood that the resistive heater 30 can be applied to the inner surface 25 or 27 as a single layer and still be within the scope of the present disclosure. As shown, the resistive heater 30 is typically in the form of a trace or multiple traces, which are separate continuous traces of conductive / resistive material (such as nickel) that provide a predetermined resistance per unit length. The specific design (material and size) of the traces results in a customizable power density for a given input power. These traces can also be provided in multiple areas, as described in more detail below.

[0041] As further shown, another electrical functional layer of the form is an RF antenna 40. Similar to the resistive heater 30, the RF antenna 40 is two layers 40' and 40", and includes a nickel material. In the manufacturing process described in more detail below, the two layers 40' and 40" are applied to the upper surface 29 of one of the two adjacent substrates 24 and the lower surface 23 of the upper substrate 22, respectively. However, it should be understood that the RF antenna 40 can be applied to the upper surface 29 or the lower surface 23 as a single layer while remaining within the scope of the present disclosure.

[0042] Now refer to Figure 4 and Figure 5 , at least one electrical termination region 50 is integral with the resistive heater 30 (for clarity, only one resistive heater layer 30' is shown). As used herein, the term "integral" should be interpreted as meaning that the termination region is part of the resistive heater 30 and is electrically continuous with it. In one form, the integral construction includes a termination region of the same material as the resistive heater 30, however, different materials may be used while remaining within the scope of the present disclosure. This form of electrical termination region 50 is disposed within the central region of the resistive heater 30 layer and is configured to electrically connect the resistive heater 30 to a power supply line (not shown) extending through the central portion of the shaft 28. In an alternative form, the electrical termination region 50 is not in the central portion of the shaft 28, but is located in other regions of the resistive heater 30, particularly regions having multiple heater zones. In this exemplary form, the electrical termination region includes a total of four (4) terminations for the two (2) zone heaters shown. However, it should be understood that a single region or multiple regions may be used while remaining within the scope of the present disclosure. In addition, the heater assembly 20 may include additional substrates (not shown) such that the multiple heater zones are disposed in different layers within the multiple substrates. Such a structure is shown in co-pending application serial number 16 / 196,820, which is commonly assigned with the present application and the contents of which are incorporated herein by reference in their entirety.

[0043] As further shown, at least one peripheral sealing band 60 is embedded between and extends around the periphery of the resistive heater 30, and the peripheral sealing band 60 is configured to secure and seal the two adjacent substrates 24 and 26 together using a solid state bonding process. Therefore, the peripheral sealing band 60 also serves a dual purpose of securing the two adjacent substrates 24 and 26, as well as sealing the interface therebetween. In one form, the seal is hermetic to meet application requirements within the processing chamber. One form has a hermetic seal or leakage rate of less than about 1×10 -6 atm cc / s (standard cubic centimeter per second) of helium. In another form, the leak rate is less than about 1×10 -7 atm cc / s helium, and in another form, the leak rate is less than about 1×10 -9 atm cc / s helium. Similar to the resistance heater 30 and the RF antenna 40, the peripheral sealing band 60 is two layers 60' and 60" ( Figure 3 ) and includes a nickel material. As described in more detail below, two layers 60' and 60" are applied to each inner surface 25 and 27 of two adjacent substrates 24 and 26, respectively. However, it should be understood that the peripheral sealing band 60 can be applied as a single layer to the inner surface 25 or 27 while remaining within the scope of the present disclosure.

[0044] Also refer to Figure 6 and Figure 7 , a layer 40' of the RF antenna 40 is shown in more detail, which also includes a peripheral sealing band 60. A peripheral sealing band 60 is applied to the layer of the RF antenna 40, which has the same function as the peripheral sealing band 60 described above with respect to the resistive heater 30. The RF antenna 40 is typically a continuous material layer as shown, but other patterns may also be used while remaining within the scope of the present disclosure. For example, other patterns may include a grid pattern for the RF antenna. In addition, the RF antenna 40 layer may include two or more electrically independent / isolated portions or regions (not shown), or other patterns such as a grid, while remaining within the scope of the present disclosure. In this form with two or more regions, the electrically functional layer may also be a chuck electrode. As further shown in both the resistive heater 30 layer and the RF antenna 40 layer, a local sealing band 70 is provided, which is arranged around the periphery of the through hole extending through the substrate.

[0045] More specifically, refer to Fig. 8A and Figure 8B, a plurality of through holes 90 extend through the substrates (substrate 22, substrate 24, substrate 26) which are configured to receive lift pins (not shown). Local sealing bands 70 in each layer (resistive heater 30 layer and RF antenna 40 layer) are used to seal the interface between the substrates (substrate 22, substrate 24, substrate 26) located locally in each through hole 90. In one form, the local sealing bands 70 are made of the same material as the layer in which they are located and are also used to secure the substrates (substrate 22, substrate 24, substrate 26) to each other locally in the through hole 90, thereby also providing dual functionality. Various methods of applying and patterning the local sealing bands 70, peripheral sealing bands 60, resistive heater 30, and RF antenna 40 are described in more detail below.

[0046] like Fig. 8A and Figure 8B As further shown, multiple dielectric regions 100 exist between two adjacent substrates 24 and 26 and between the edge boundaries 31 of the resistive heater 30. In another form, a dielectric region 100 also exists between the upper substrate 22 and one of the two adjacent substrates 24. The dielectric region 100 is sealed between the substrates (substrate 22, substrate 24, substrate 26) by the peripheral sealing band 60, and in some areas also by the local sealing band 70. The dielectric region 100 is generally used to dielectrically separate the traces of the resistive heater 30 from each other (to inhibit arcing and shorting), to dielectrically separate the through-hole 90 and the peripheral sealing element 60, and to dielectrically separate any other features within the layer that should not be "energized" when the resistive heater 30 is electrically "energized". Similarly, for the RF antenna 40 layer, the dielectric region 100 dielectrically isolates the through-hole 90 and the peripheral sealing band 60 from being "energized" when the RF antenna 40 is electrically "energized", and isolates the electrically independent / isolated portions of the RF antenna 40 in the form of multiple portions / regions (not shown).

[0047] In a variation of the present disclosure, a plurality of islands of material 102 are provided within dielectric region 100 , which are regions of material that are uncharged, thereby facilitating bonding of substrates 22 , 24 , and 26 .

[0048] In one form of the present disclosure, utilizing dielectric region 100 and various electrical functional layers (eg, resistive heater 30 , RF antenna 40 ), the present disclosure also provides a layered assembly wherein substrates (eg, substrate 22 , substrate 24 , substrate 26 ) are not in physical contact with one another.

[0049] Refer to Figure 3 , the shaft 28 is secured to the underside of one of the two adjacent substrates 26 by a bonding layer 110. In one form, the bonding layer 110 is also a nickel material, however, it should be understood that other materials may be employed while remaining within the scope of the present disclosure.

[0050] As described above, in one form of the present disclosure, each of the resistive heater 30, the RF antenna 40, the peripheral sealing element 60, the local sealing band 70, the material island 102, and the bonding layer 110 for the shaft 28 is a nickel material. Nickel is used in this form due to its material properties compatible with the specific design of the heater assembly 20 and its manufacturing process described in more detail below, as well as its ability to electrically act on the resistive heater 30 and the RF antenna 40 in a controlled atmosphere chamber. More specifically, nickel has the conductivity to provide a relatively low-profile electrical functional element (i.e., the resistive heater 30, the RF antenna 40, etc.), which can be more easily integrated into the base design. Nickel also has a relatively high TCR (temperature coefficient of resistance), which allows the electrical functional element (i.e., the resistive heater 30, the RF antenna 40, etc.) to also be used as a temperature sensor (described in more detail below). In addition, nickel can operate at relatively high temperatures, i.e., up to about 1,400°C and in other forms at 650°C, 800°C, or 900°C and other operating temperature targets. Nickel is also a material compatible with controlled atmosphere chambers such as semiconductor processing chambers. Nickel also has a relatively compatible CTE (coefficient of thermal expansion) relative to ceramic substrates in a controlled chamber environment, more specifically, can adapt to CTE mismatch and thermal cycles while maintaining its material properties. In addition, nickel is also compatible with the manufacturing process of the present application for applying nickel materials, which will be described in more detail below. One form of nickel material is an alloy composition having nickel in an amount greater than about 50at% in another form, the amount of nickel being greater than about 99at%, even more particularly between 99at%-99.999at%, and there being less than 0.1at% carbon. Although nickel is used with each element described herein, it should be understood that other materials and material combinations may be used within the scope of the present disclosure. In addition, graded materials may be used that have variable material properties (e.g., resistivity) along at least one dimension (e.g., by its thickness, across its width, or along its length). These variable material properties may be designed into the material, or may be the result of a manufacturing process such as hot pressing. For example, the resistive layer 30 may be nickel, while the RF antenna 40 is aluminum, and further, the peripheral sealing band 60 and / or the local sealing band 70 are the same or different materials, such as titanium. These and other material combinations should be construed as falling within the scope of the present disclosure.

[0051] In yet another form, the nickel material (or other material of the electrical functional layer) is used as a sensor and provides temperature information. Typically, the resistance change of the material is monitored, and the temperature is calculated (or determined from a lookup table) based on the resistance change. Exemplary methods, systems, and controllers for such dual-function electrical functional layers are described in more detail in U.S. Patent No 7,196,295, which is jointly owned with the present application, and its contents are incorporated herein by reference in their entirety.

[0052] Now refer to Fig. 9 , and also refer to Figure 3 , a method of making a heater assembly 20 is shown and is generally indicated by reference numeral 200. In a first step 210, substrates 22, 24, and 26 are prepared. More specifically, substrates 22, 24, and 26 are ground or polished to predetermined flatness and parallel dimensions, which are on the order of about 0.0004 in (0.01 mm). Next, in step 230, the layers of resistive heater 30, RF electrode 40, and bonding layer 110 for shaft 28 are applied to the faces of the substrates (substrate 22, substrate 24, substrate 26) and shaft 28. In an optional step as shown at 220, an adhesion layer (not shown) may be applied to the faces of the substrates / faces as dictated by the particular material and processing requirements. For example, if the surface roughness of the adjacent substrates 24 / 26 is low, or if BeO is used as the material of the substrates (substrate 22, substrate 24, substrate 26), nickel does not adhere to it as easily as other substrate materials (e.g., AlN), then an adhesion layer will be used. In the specific example of a BeO substrate, a titanium (Ti) adhesion layer is used between the nickel and the BeO. Thus, if the bonding surface of the substrate is too smooth mechanically or if the material of the substrate does not easily bond to the bonding / bonding material, an adhesion layer will be used. Materials for the adhesion layer may include, for example, nickel (Ni), aluminum (Al), zirconium (Zr), titanium (Ti), and hafnium (Hf), etc.

[0053] In one form, a continuous layer of material (e.g., nickel) is applied to each of the inner surfaces 25 and 27 of adjacent substrates 24 and 26, and is also applied to the upper surface 29 of one of the two adjacent substrates 24 and the lower surface 23 of the upper substrate 22. As described above, in one form, the two layers 30' and 30" forming the resistive heater 30 are applied to each of the inner surfaces 25 and 27 of the two adjacent substrates 24 and 26, respectively, and are mirror images. Similarly, the two layers 40' and 40" forming the RF antenna 40 are applied to the upper surface 29 of one of the two adjacent substrates 24 and the lower surface 23 of the upper substrate 22, respectively. This method of application is also referred to as "double-sided" or "two-sided" application. As described above, single-sided application of the entire layer is within the teachings of the present disclosure. In preliminary testing, it has been shown that the "double-sided" application provides an improved airtight seal for the entire heater assembly 20. In one form of the present disclosure, the bonding layer 110 is applied to the upper surface of the shaft 28 as a single layer in the form of a continuous layer without patterning.

[0054] Advantageously, the material is applied using a sputtering process. However, it should be understood that other application methods, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), thick film, thin film, sol gel, thermal spray, continuous foil and patterned foil and combinations thereof, are considered within the scope of the present disclosure.

[0055] In one form, each layer of material is applied as a continuous layer and is subsequently patterned (step 240) to form the various elements of the layer, i.e., the resistive heater 30, the RF antenna 40, the peripheral sealing band 60 and / or the local sealing band 70, and the material island 102. In one form, this patterning is achieved by laser ablation or laser removal. Other forms of material removal should be interpreted as falling within the scope of the present disclosure, such as chemical etching, water jets, hybrid water jets (water jets and lasers), and mechanical grinding, etc. In another form, a mask can be used for one or more layers, and the material is applied to the mask to form one or more elements. In a variation of the present disclosure, one trace of the resistive heater layer 30' is wider than the trace of the other resistive heater layer 30" to provide improved trace alignment or matching when adjacent substrates 24 and 26 are assembled together. This approach can also be used with the peripheral sealing band 60 and the local sealing band 70 and other elements, and can be used with a "double-sided" application of the material.

[0056] After applying and patterning the layers, the substrates (substrate 22, substrate 24, substrate 26) are assembled together in step 250 and held together in a fixing tool (not shown). The assembled substrates 22, 24 and 26 are bonded with heat and pressure in a controlled environment (step 260) for a predetermined amount of time so that the materials of each layer are solid-state bonded to fix the substrates (substrate 22, substrate 24, substrate 26) together. For example, a vacuum hot press furnace can be used at about 1,000°C and about 1,000psi for about 2 hours to solid-state bond the substrates (substrate 22, substrate 24, substrate 26) together. As used herein, it should be understood that "solid-state" bonding (or bonding) means that the temperature of the material (e.g., nickel) is maintained below its liquidus temperature throughout the application of heat and pressure during the bonding process. This process should be different from other methods such as brazing, in which the temperature of the material exceeds its liquidus temperature. Solid-state bonding may also be referred to as diffusion bonding, however, the teachings of the present disclosure do not necessarily require that the material of each electrical functional layer (e.g., nickel) diffuse into another electrical functional layer (with double-sided applications) or diffuse into the substrate material. In addition, it should be understood that "liquidus" as used herein should be interpreted to include transient liquid phase bonding (TLP).

[0057] Although the shaft 28 can be bonded to the assembled substrates (substrate 22, substrate 24, substrate 26) in the same process as described above, in one form, the shaft 28 is bonded to the substrates (substrate 22, substrate 24, substrate 26) in a separate process after the substrates (substrate 22, substrate 24, substrate 26) are solid bonded. In one form, the shaft 28 is also solid bonded to the substrates (substrate 22, substrate 24, substrate 26) using a similar process as described above, resulting in a two-step solid bonding process to complete the entire heater assembly 20 / base. For example, at least one peripheral sealing band is embedded between the inner surface of the adjacent substrate 26 (or more generally, the heating plate) and the shaft 28 and extends around its periphery. One form of the peripheral sealing band includes a nickel material, which, as described above, is configured to secure and seal the heating plate and the shaft 28 together using a solid bonding process. However, it should be understood that other connection / bonding techniques can be used to connect the shaft 28, and this is still within the scope of the present disclosure. Furthermore, the shaft 28 may be integral with one of the adjacent substrates 26 while remaining within the scope of the present disclosure.

[0058] In one variation of the present disclosure, the pressure applied during solid state bonding is further controlled to adjust the size of the dielectric region 100. In a typical solid state bonding process, for nickel materials, the temperature is between about 600°C and about 1,455°C, the pressure is between about 10 psi and about 10,000 psi, and the total time at bonding temperature ("soak time") is between about 0.25 hours and about 24 hours. The vacuum level is between about 1 and about 1E. -7 Torr, and may include inert gases such as N 2 (nitrogen), He (helium) and Ar (argon), etc. In addition, a reducing atmosphere can be used to reduce oxides, such as hydrogen or carbon monoxide. It should be understood that these processing parameters will vary depending on the size and configuration of the layered components, and therefore should not be interpreted as limiting the scope of the present disclosure.

[0059] In yet another form of the present disclosure, a repair method is provided in which a layered assembly includes at least two adjacent substrates (substrate 24 / substrate 26) and at least one peripheral sealing band 60, which is embedded between the inner surfaces of the two adjacent substrates (substrate 24 / substrate 26) and extends around the periphery of the inner surface, similar to the peripheral sealing band 60 described above. In one form, the peripheral sealing band 60 includes a nickel material that is configured to fix and seal the two adjacent substrates (substrate 24 / substrate 26) together using a solid-state bonding process as described above. In addition, for this repair application, the peripheral sealing band 60 can take different geometric configurations, for example, as a continuous integral layer or multiple sealing bands disposed on the entire layer, which may or may not be "peripheral".

[0060] Typically, the base requiring refurbishment is surfaced or ground to a specific flatness and surface roughness. In one example, the surface refinished substrate will represent the adjacent substrate 24 as shown and described above. A peripheral sealing band 60 (or other sealing structure) is then applied to one or both inner surfaces of the surface refinished substrate and the new upper substrate (i.e., the adjacent substrate 22 as shown and described above), and the assembly is then solid-state bonded as described herein. Although nickel is a material used for the peripheral sealing band 60 in this variation, it should be understood that other materials, such as aluminum, silicon, and the like, and alloys thereof, may be employed while remaining within the scope of the present disclosure. In addition, the surface refinishing process may be even further through the assembly, such as even applied to an adjacent substrate 26 or shaft 28, while remaining within the scope of the present disclosure.

[0061] Now combine Figure 3 refer to Fig. 10A and Fig. 10B , shows another form of the present disclosure, in which an area of ​​a resistive heater layer 30 on one adjacent substrate 26 is thermally decoupled from an area of ​​another resistive heater layer 30' on another adjacent substrate 24. A second resistive heater layer 30" applied to the upper surface of the adjacent substrate 26 defines a different trace pattern as shown, wherein traces (also referred to as "circuits") are omitted near the electrical termination area 50, resulting in an unheated area 300 near the upper portion of the shaft 28, thereby inhibiting heat conduction from the central area 310 of the resistive heater layer 30' to the unheated area 300, thereby providing a further means to locally control temperature and reduce heat losses near the shaft 28. These and other variations of alternative trace patterns for resistive heater layers and other electrical functional layers (which are not mirror images of each other as described above) should be interpreted as falling within the scope of the present disclosure. For example, instead of omitting traces in certain areas, the thickness of the traces can be reduced, thereby creating gaps between adjacent traces (for double-sided applications as described above), thereby thermally decoupling adjacent traces from each other.

[0062] Unless otherwise expressly stated herein, when describing the scope of the present disclosure, all numerical values ​​expressing mechanical / thermal properties, composition percentages, dimensions and / or tolerances or other characteristics should be understood to be modified by the word "about" or "approximately". Such modifications are necessary for various reasons, including industrial practice, materials, manufacturing and assembly tolerances, and testing capabilities.

[0063] As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean at least one of A, at least one of B, and at least one of C.

[0064] The description of the present disclosure is merely exemplary in nature, and thus, variations that do not depart from the essence of the present disclosure are intended to be within the scope of the present disclosure. These variations should not be regarded as a departure from the spirit and scope of the present disclosure.

Claims

1. A layered assembly for use in a controlled atmosphere chamber, the layered assembly include: multiple substrates; at least one electrically functional layer embedded between two adjacent substrates of the plurality of substrates, the electrically functional layer comprising a material configured to fix the two adjacent substrates together using a solid state bonding process; at least one electrical termination region integral with the at least one electrical functional layer; as well as at least one peripheral sealing band embedded between the inner faces of two adjacent substrates and extending around the periphery of the inner faces of the two adjacent substrates, the at least one peripheral sealing band comprising a material configured to secure and seal the two adjacent substrates together using the solid state bonding process, There are a plurality of dielectric regions between two adjacent substrates and between the edge boundaries of the at least one electrical functional layer, and the plurality of dielectric regions are sealed between the two adjacent substrates by at least one peripheral sealing band. 2 . The layered assembly according to claim 1 , wherein the material of at least one of the electrically functional layer and the peripheral sealing band comprises nickel. 3 . The layered assembly of claim 1 , wherein the material of the electrically functional layer is graded and has variable material properties along at least one dimension.

4. The layered assembly of claim 1, wherein the electrically functional layer is selected from the group consisting of a resistive heater, an RF antenna, and a clamping electrode.

5. The layered assembly of claim 1, wherein the electrically functional layer is a resistive heater and a temperature sensor.

6. The layered assembly of claim 1, wherein each of the plurality of substrates comprises a ceramic material. 7 . The layered assembly according to claim 6 , further comprising an upper substrate disposed on one of the two adjacent substrates, the upper substrate comprising a ceramic material different from ceramic materials of the two adjacent substrates.

8. The layered assembly of claim 7, wherein two adjacent substrates are aluminum nitride (AlN) material, and the upper substrate is a high-grade AlN material.

9. The layered assembly of claim 6, wherein the plurality of substrates comprise beryllium oxide (BeO) material.

10. The layered assembly of claim 1, wherein the two adjacent substrates include a plurality of through holes formed through the substrates, and the layered assembly further includes a local sealing band disposed around a periphery of each of the plurality of through holes between the two adjacent substrates.

11. The layered assembly of claim 10, wherein the material of the local sealing band comprises nickel. 12 . The layered assembly of claim 1 , further comprising an adhesion layer disposed between at least one of the two adjacent substrates and the at least one electrically functional layer.

13. The layered assembly of claim 12, wherein the adhesive layer is further disposed between at least one of the two adjacent substrates and the at least one peripheral sealing band.

14. The layered assembly of claim 1, further comprising two electrically functional layers embedded between two adjacent substrates of the plurality of substrates; each electrically functional layer being applied to each of the two adjacent substrates prior to the solid state bonding process.

15. The layered assembly of claim 14, wherein each electrically functional layer comprises traces, and the traces of one electrically functional layer are wider than the traces of another electrically functional layer.

16. The layered assembly of claim 1, further comprising two peripheral sealing bands embedded between two adjacent substrates of the plurality of substrates; each peripheral sealing band being applied to each of the two adjacent substrates prior to the solid state bonding process.

17. The layered assembly of claim 16, wherein the width of one peripheral sealing band is wider than the width of the other peripheral sealing band.

18. The layered assembly of claim 1, further comprising a plurality of islands of material disposed within the dielectric region, wherein the islands of material are uncharged.

19. The layered assembly of claim 1, further comprising a shaft secured to an underside of one of the two adjacent substrates.

20. The layered assembly of claim 1, wherein the seal is airtight.

21. The layered assembly of claim 1, wherein the at least one electrically functional layer comprises a resistive heater having a plurality of zones.

22. The layered assembly of claim 1, further comprising a plurality of resistive heater zones disposed in different layers within the plurality of substrates.

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