Novel silicon wafer magnetron sputtering clamp

Abstract

The utility model discloses a novel silicon wafer magnetron sputtering clamp which comprises a base plate, a through groove is formed in the base plate, a bearing ring is fixedly installed on the inner wall of the through groove, and a back piece is installed in the bearing ring. And positioning pieces are installed in the base plate in an equal-angle sliding mode, and a driving piece is movably installed at the upper end of the base plate and used for extruding and driving the positioning pieces to move. According to the novel silicon wafer magnetron sputtering clamp, a silicon wafer is placed on the bearing ring, the rotating drum is rotated through the rotating ring, in the rotating process of the rotating drum, downward movement is achieved through threaded connection between the rotating drum and the base plate, and in the downward movement process, guide rods distributed at equal angles are synchronously extruded through the attaching effect of the rotating drum and the guide rods; after the guide rods are extruded, the positioning plates are driven to be attached to the side portions of the silicon wafers through the attaching effect of the guide rods and the base plate, the silicon wafers are rapidly fixed, meanwhile, the device is suitable for fixing the silicon wafers of different sizes, and the production cost is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon wafer magnetron sputtering fixtures, and specifically relates to a novel silicon wafer magnetron sputtering fixture. Background Technique

[0002] Magnetron sputtering is a type of physical vapor deposition. General sputtering methods can be used to prepare various materials such as metals, semiconductors, and insulators, and have the advantages of simple equipment, easy control, large coating area, and strong adhesion. The incident particles experience complex scattering processes in the target, collide with target atoms, transfer part of their momentum to the target atoms, and these target atoms collide with other target atoms, forming a cascade process. In this cascade process, some target atoms near the surface obtain sufficient momentum to move outward and are sputtered out of the target. During the silicon wafer magnetron sputtering process, a fixture is needed to fix the silicon wafer.

[0003] For example, in the patent application with the authorization publication number CN218812054U, the authorization publication date of April 7, 2023, and the name "A Novel Silicon Wafer Magnetron Sputtering Fixture", the substrate has a square plus extended fixed plate structure, is fixedly connected to the external structure through the extended fixed plate, has a central opening on the substrate, and the silicon wafer is placed in the opening; there are multiple screw holes on both the front and back sides of the substrate, and fixing devices are provided; in this embodiment, the opening is circular, with a diameter not greater than six inches, six screw holes are provided on the front side, and four screw holes are provided on the back side; when only one side of the silicon wafer needs to be sputtered, the back plate on the back side can be fixed with screws, and then magnetron sputtering is carried out. The silicon wafer is placed in the center of the fixture, effectively improving the uniformity of the sputtered metal film layer of the product; for different types and sizes of silicon wafers, it is adapted by changing the shape and size of the pressing piece, with good versatility.

[0004] During the actual use of the above device, it is necessary to turn the screws multiple times, resulting in a slow installation efficiency. It is necessary to adapt and replace the pressing piece according to the actual size of the silicon wafer, which leads to the need to set and manufacture pressing pieces of various sizes, increasing the production cost, and it is necessary to select a suitable pressing piece, which will further increase the operation difficulty.

[0005] Therefore, we propose a novel silicon wafer magnetron sputtering fixture to solve the problems raised above. Content of the Utility Model

[0006] 1. Technical problems to be solved by the utility model:

[0007] The purpose of the present utility model is to provide a novel silicon wafer magnetron sputtering fixture to solve the problems in the current market raised in the above background technique.

[0008] 2. Technical solution:

[0009] To achieve the above object, the present utility model provides the following technical solution: a novel silicon wafer magnetron sputtering fixture, including a substrate, a through groove is formed inside the substrate, a receiving ring is fixedly installed on the inner wall of the through groove, and a backsheet is installed inside the receiving ring;

[0010] The substrate is slidably installed with positioning members at equal angles inside, and a driving member is movably installed at the upper end of the substrate, and the driving member is used to squeeze and drive the positioning members to displace.

[0011] Further, the inner wall of the receiving ring and the outer wall of the backsheet form a threaded connection, a rotating block is fixedly installed in the middle of the lower end of the backsheet, and the thickness of the receiving ring is equal to the sum of the thicknesses of the backsheet and the rotating block.

[0012] Through the above technical solution, the backsheet is facilitated to be installed inside the receiving ring under the action of the rotating block.

[0013] Further, the positioning member is composed of a guide rod and a positioning plate, the guide rod is slidably arranged in close contact with the inside of the substrate, and a positioning plate is fixed on the side of the guide rod close to the backsheet.

[0014] Through the above technical solution, the guide rod can drive the positioning plate to displace.

[0015] Further, one side of the upper end of the guide rod is inclined, and one side of the upper end of the positioning plate close to the center of the receiving ring is arranged in an arc structure.

[0016] Through the above technical solution, the guide rod can move after being squeezed, and the setting of the positioning plate facilitates the placement of the silicon wafer.

[0017] Further, the driving member is composed of a rotating cylinder and a rotating ring, the inner wall of the rotating cylinder is provided with threads, and the rotating cylinder is threadedly connected to the substrate through the threads, and the rotating ring is fixedly installed on the outer wall of the upper end of the rotating cylinder.

[0018] Through the above technical solution, when the rotating cylinder is rotated, the rotating cylinder can be driven to move up and down.

[0019] Further, the lower end of the rotating cylinder is in close contact with the inclined surface of the guide rod, and anti-slip threads are provided on the outer sides of the rotating ring and the rotating block.

[0020] Through the above technical solution, the guide rod can be squeezed during the downward movement of the rotating cylinder.

[0021] 3. Beneficial effects:

[0022] Adopting the technical solution provided by the present utility model, compared with the prior art, the magnetron sputtering fixture for silicon wafers of the present utility model realizes the rapid fixation of silicon wafers of different sizes through the cooperation of the positioning member and the driving member, reducing the production cost. The specific content is as follows:

[0023] Place the silicon wafer on the receiving ring. Rotate the rotating cylinder through the rotating ring. During the rotation of the rotating cylinder, the downward movement is realized by the threaded connection between the rotating cylinder and the substrate. During the downward movement, the equally angularly distributed guide rods are synchronously extruded through the fitting action between the rotating cylinder and the guide rods. After the guide rods are subjected to the extrusion force, the positioning plate is driven to fit against the side of the silicon wafer through the fitting action with the substrate, realizing the rapid fixation of the silicon wafer, and at the same time being applicable to the fixation operation of silicon wafers of different sizes, reducing the production cost;

[0024] When unidirectional sputtering is required, rotate the backsheet through the rotating block. During the rotation of the backsheet, due to the threaded connection with the receiving ring, it moves upward until the upper end surface of the backsheet is flush with the upper end surface of the receiving ring. Thus, under the blocking action of the backsheet, the fragmentation of the thinner silicon wafer caused by the bombardment of large current can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic perspective view of the overall side view of the present utility model;

[0026] Figure 2 It is a schematic perspective view of the overall side view from another perspective of the present utility model;

[0027] Figure 3 It is a schematic perspective view of the side cross-section of the substrate of the present utility model;

[0028] Figure 4 For the present utility model Figure 3 The enlarged structural schematic diagram at A in the figure.

[0029] In the figure: 1. Substrate; 2. Receiving ring; 3. Backsheet; 31. Rotating block; 4. Positioning member; 41. Guide rod; 42. Positioning plate; 5. Driving member; 51. Rotating cylinder; 52. Rotating ring. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0030] To facilitate the understanding of the present utility model, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0031] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present utility model.

[0032] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, the meaning of "a plurality" is two or more unless otherwise specifically defined.

[0033] In the present utility model, unless otherwise clearly specified and defined, terms such as "installed", "connected", "joined", "fixed", "provided with", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances. Embodiment

[0034] Please refer to Figures 1-4 , a new type of silicon wafer magnetron sputtering fixture, including a substrate 1. A through groove is opened inside the substrate 1, and a receiving ring 2 is fixedly installed on the inner wall of the through groove. A backsheet 3 is installed inside the receiving ring 2; the inner wall of the receiving ring 2 and the outer wall of the backsheet 3 are in threaded connection, and a rotating block 31 is fixedly installed in the middle of the lower end of the backsheet 3. And the thickness of the receiving ring 2 is equal to the sum of the thicknesses of the backsheet 3 and the rotating block 31;

[0035] When unidirectional sputtering is required, the backsheet 3 is rotated by the rotating block 31. During the rotation of the backsheet 3, due to the threaded connection with the receiving ring 2, it moves upward until the upper end surface of the backsheet 3 is flush with the upper end surface of the receiving ring 2. Thus, under the blocking action of the backsheet 3, the situation of broken pieces generated by the thinner silicon wafer due to large current bombardment can be reduced. And when bidirectional sputtering is required, the rotating block 31 is rotated in the reverse direction to disassemble the backsheet 3;

[0036] A positioning member 4 is installed inside the substrate 1 with equal-angle sliding, and a driving member 5 is movably installed at the upper end of the substrate 1. The driving member 5 is used to squeeze and drive the positioning member 4 to displace. The positioning member 4 is composed of a guide rod 41 and a positioning plate 42. The guide rod 41 is arranged in a sliding fit inside the substrate 1, and a positioning plate 42 is fixed on the side of the guide rod 41 close to the backsheet 3. One side of the upper end of the guide rod 41 is inclined, and one side of the upper end of the positioning plate 42 close to the center of the receiving ring 2 is arranged in an arc structure. The driving member 5 is composed of a rotating cylinder 51 and a rotating ring 52. The inner wall of the rotating cylinder 51 is provided with threads, and the rotating cylinder 51 is threadedly connected to the substrate 1 through the threads. Moreover, the rotating ring 52 is fixedly installed on the outer wall of the upper end of the rotating cylinder 51. The lower end of the rotating cylinder 51 is attached to the inclined surface of the guide rod 41, and anti-slip patterns are provided on the outer sides of the rotating ring 52 and the rotating block 31.

[0037] First, place the silicon wafer on the receiving ring 2. Rotate the rotating cylinder 51 through the rotating ring 52. During the rotation of the rotating cylinder 51, it moves downward by utilizing the threaded connection between the rotating cylinder 51 and the substrate 1. During the downward movement, the equally-angularly distributed guide rods 41 are synchronously squeezed through the fitting action between the rotating cylinder 51 and the guide rod 41. After the guide rod 41 receives the squeezing force, it drives the positioning plate 42 to fit on the side of the silicon wafer by means of the fitting action with the substrate 1, realizing the rapid fixation of the silicon wafer. At the same time, it is applicable to the fixation operation of silicon wafers of different sizes, reducing production costs.

[0038] Working principle: When using this new type of silicon wafer magnetron sputtering fixture, as Figures 1-4 shown, first place the silicon wafer on the receiving ring 2. Rotate the rotating cylinder 51 through the rotating ring 52. The rotating cylinder 51 moves downward under the action of the thread, synchronously squeezing the equally-angularly distributed guide rods 41. The guide rod 41 can drive the positioning plate 42 to fit on the side of the silicon wafer, realizing the rapid fixation of the silicon wafer. At the same time, it is applicable to the fixation operation of silicon wafers of different sizes, reducing production costs. When one-way sputtering is required, rotate the backsheet 3 through the rotating block 31 and move upward under the action of the threaded connection until the upper end surface of the backsheet 3 is flush with the upper end surface of the receiving ring 2. Under the blocking action of the backsheet 3, the situation of broken pieces generated by the thinner silicon wafer due to large-current bombardment is reduced. And when two-way sputtering is required, rotate the rotating block 31 in the reverse direction and remove the backsheet 3.

[0039] The content not described in detail in this specification belongs to the prior art well-known to those skilled in the art.

[0040] Although the present invention has been described in detail with reference to the foregoing embodiments, for those skilled in the art, they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A novel silicon wafer magnetron sputtering fixture, characterized by: It comprises a base plate (1), a through groove is provided inside the base plate (1), a receiving ring (2) is fixedly mounted on the inner wall of the through groove, and a back sheet (3) is mounted inside the receiving ring (2); A positioning member (4) is slidably mounted at an equal angle inside the base plate (1), and a driving member (5) is movably mounted on the upper end of the base plate (1), the driving member (5) being used to squeeze and drive the positioning member (4) to move.

2. The novel silicon wafer magnetron sputtering fixture according to claim 1 is characterized in that: The inner wall of the receiving ring (2) is threadedly connected to the outer wall of the back sheet (3), a rotating block (31) is fixedly mounted at the middle of the lower end of the back sheet (3), and the thickness of the receiving ring (2) is equal to the sum of the thicknesses of the back sheet (3) and the rotating block (31).

3. The novel silicon wafer magnetron sputtering fixture according to claim 1 is characterized in that: The positioning member (4) is composed of a guide rod (41) and a positioning plate (42), and the guide rod (41) is slidably arranged inside the base plate (1), and the positioning plate (42) is fixed to a side of the guide rod (41) close to the back sheet (3).

4. The novel silicon wafer magnetron sputtering fixture according to claim 3 is characterized in that: One side of the upper end of the guide rod (41) is inclined, and one side of the upper end of the positioning plate (42) close to the center of the receiving ring (2) is arranged in an arc-shaped structure.

5. The novel silicon wafer magnetron sputtering fixture according to claim 1 is characterized in that: The driving member (5) is composed of a rotating drum (51) and a rotating ring (52), wherein the inner wall of the rotating drum (51) is provided with a thread, and the rotating drum (51) is threadedly connected to the base plate (1) via the thread, and the rotating ring (52) is fixedly mounted on the outer wall of the upper end of the rotating drum (51).

6. The novel silicon wafer magnetron sputtering fixture according to claim 5 is characterized in that: The lower end of the rotating drum (51) is in contact with the inclined surface of the guide rod (41), and the outer sides of the rotating ring (52) and the rotating block (31) are provided with anti-slip grooves.

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