Wafer heater and chemical vapor deposition system

Abstract

The utility model relates to a wafer heater and a chemical vapor deposition system, which are used for solving the technical problem of non-uniform heat distribution on the surface of the wafer heater. The wafer heater comprises a heating part which comprises a lower heating plate, an upper heating plate which is stacked on the lower heating plate and is used for placing a wafer, a ceramic heating piece which is embedded between the upper heating plate and the lower heating plate and has a rectangular cross section, and an interface part which is arranged at the bottom of the heating part and is used for connecting the upper heating plate and the lower heating plate. And the ceramic heating element is electrically connected with an external power supply through a heating element wire penetrating out of the interface part.

Description

Technical Field

[0001] The present disclosure relates to the technical field of chemical vapor deposition, and in particular, to a wafer heater and a chemical vapor deposition system. Background Art

[0002] Chemical vapor deposition (CVD) technology is a process that applies gaseous substances to produce chemical reactions and transport reactions on solids and generates solid deposits. It can help improve the performance of crystals or crystal thin films. Its most common use is to generate a new epitaxial single crystal layer on a certain crystal substrate through a chemical vapor deposition (CVD) system for manufacturing various microelectronic devices.

[0003] A chemical vapor deposition system generally includes a reaction chamber and a wafer heater disposed in the reaction chamber. The wafer heater is used to support, fix, and heat a wafer (crystal substrate). Achieving a uniform temperature curve on the surface of the wafer heater is crucial for high-quality thin film deposition.

[0004] In related technologies, a wafer heater usually uses a resistance wire for heating. It not only easily breaks, resulting in a significant increase in maintenance and replacement costs, but also causes uneven heat distribution on the surface of the wafer heater, thereby affecting the quality of the thin film formed on the wafer. Summary of the Utility Model

[0005] The purpose of the present disclosure is to provide a wafer heater and a chemical vapor deposition system to solve the technical problem of uneven heat distribution on the surface of the wafer heater.

[0006] To achieve the above purpose, the present disclosure provides a wafer heater, including: a heating part, including: a lower heating plate, an upper heating plate stacked on the lower heating plate for placing a wafer, and a ceramic heating element embedded between the upper heating plate and the lower heating plate. The cross-section of the ceramic heating element is rectangular, and an interface part is disposed at the bottom of the heating part. The ceramic heating element is configured to be electrically connected to an external power supply through a heating element wire passing through the interface part.

[0007] Optionally, an anti-wear coating is coated on the outer surface of the ceramic heating element.

[0008] Optionally, the protective coating is an amorphous carbon layer.

[0009] Optionally, the heating part further includes a brazing preform disposed between the periphery of the upper heating plate and the periphery of the lower heating plate, and the upper heating plate and the lower heating plate are welded and fixed through the brazing preform.

[0010] Optionally, the ceramic heating element is connected to the heating element wire through a high melting point terminal.

[0011] Optionally, the ceramic heating element is configured to have a structure with multiple concentric circles.

[0012] Optionally, the ceramic heating element is coiled in a serpentine shape between the upper heating plate and the lower heating plate.

[0013] Optionally, the heating part further includes a bottom plate, the lower heating plate is stacked on the bottom plate, the interface part is configured as a vertically extending sleeve-like structure, the upper end of the interface part is fixedly connected to the bottom plate, and the end of the ceramic heating element passes through the lower heating plate and the bottom plate and extends into the interface part to be electrically connected to the heating element.

[0014] Optionally, a ceramic shaft is further provided in the interface part, and the ceramic shaft can insulate the heating element wire.

[0015] Based on the above technical solutions, the present disclosure further provides a chemical vapor deposition system, including a reaction chamber and the wafer heater in the above technical solutions. The heating part is accommodated in the reaction chamber, and the interface part extends out of the reaction chamber.

[0016] Through the above technical solutions, in the wafer heater provided by the present disclosure, the ceramic heating element with a rectangular cross-section is not only not easily broken and has good durability, but also has a larger contact area with the upper heating plate and the lower heating plate, which can significantly reduce the thermal resistance between the ceramic heating element and the upper heating plate and the lower heating plate, so that the heat conduction on the wafer surface is more efficient and uniform. In addition, there will be no air gaps around the ceramic heating element with a rectangular cross-section, which can improve the heat transfer efficiency of the ceramic heating element, improve the heat transfer consistency, and minimize the risk of local hot spots or cold spots, improve the uneven heat distribution on the heating part, and thus improve the quality of the thin film formed on the wafer. The chemical vapor deposition system provided by the present disclosure has the same technical effects as the wafer heater in the above technical solutions. To avoid unnecessary repetition, it will not be elaborated here.

[0017] Other features and advantages of the present disclosure will be described in detail in the subsequent specific implementation section. Description of the Drawings

[0018] The drawings are used to provide a further understanding of the present disclosure, and constitute a part of the specification. Together with the following specific implementation, they are used to explain the present disclosure, but do not constitute a limitation to the present disclosure. In the drawings:

[0019] Figure 1 is a schematic structural diagram of the chemical vapor deposition system in the specific implementation of the present disclosure;

[0020] Figure 2 is Figure 1 the exploded view of

[0021] Figure 3 is a cross-sectional view of the wafer heater from one angle in the specific embodiment of the present disclosure;

[0022] Figure 4 is a cross-sectional view of the wafer heater from another angle in the specific embodiment of the present disclosure;

[0023] Figure 5 is a schematic diagram showing the distribution of the internal heating zone and the annular external heating zone of the heating part in the specific embodiment of the present disclosure.

[0024] Explanation of reference numerals

[0025] 100 - wafer, 200 - reaction chamber,

[0026] 1 - heating part, 101 - internal heating zone, 102 - annular external heating zone, 11 - lower heating plate, 12 - upper heating plate, 13 - ceramic heating element, 131 - first heating element, 132 - second heating element, 14 - brazing preform, 15 - bottom plate,

[0027] 2 - interface part, 21 - heating element wire, 22 - ceramic shaft. Specific embodiment

[0028] The following details the specific embodiment of the present disclosure with reference to the accompanying drawings. It should be understood that the specific embodiment described herein is only for the purpose of illustrating and explaining the present disclosure, and is not intended to limit the present disclosure.

[0029] In the present disclosure, unless otherwise stated, the orientation terms such as "upper, lower" generally refer to the upper and lower of the wafer heater in the normal use state, referring to Figures 1 to 4 the drawing direction of. "Inner, outer" refers to the inner and outer relative to the contour of the corresponding component itself. In addition, when the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0030] According to the specific embodiment of the present disclosure, a wafer heater is provided, referring to Figures 1 to 4As shown, the wafer heater may include a heating section 1 and an interface section 2. Among them, the heating section 1 is used to support the wafer 100 and heat it. The heating section 1 may include a lower heating plate 11, an upper heating plate 12, and a ceramic heating element 13. The upper heating plate 12 may be stacked on the lower heating plate 11 for placing the wafer 100, that is, the wafer 100 is supported on the upper surface of the upper heating plate 12. The ceramic heating element 13 may be embedded between the upper heating plate 12 and the lower heating plate 11, and the cross-section of the ceramic heating element 13 may be rectangular. The interface section 2 may be provided at the bottom of the heating section 1. The ceramic heating element 13 may be electrically connected to an external power supply (not shown) and / or a control module (not shown) through a heating element wire 21 passing through the interface section 2 to control the heating power of the ceramic heating element 13.

[0031] Through the above technical solution, in the wafer heater provided by the present disclosure, the ceramic heating element 13 with a rectangular cross-section is not only not easily broken and has good durability, but also has a larger contact area with the upper heating plate 12 and the lower heating plate 11, which can significantly reduce the thermal resistance between the ceramic heating element 13 and the upper heating plate 12 and the lower heating plate 11, so that the heat conduction on the surface of the wafer 100 is more efficient and uniform. In addition, there will be no air gaps around the ceramic heating element 13 with a rectangular cross-section, which can improve the heat transfer efficiency of the ceramic heating element 13, improve the heat transfer consistency, and minimize the risk of local hot spots or cold spots, improve the uneven heat distribution on the heating section 1, and thus improve the film quality generated on the wafer 100.

[0032] In order to further improve the uneven heat distribution on the heating section 1, refer to Figure 5 As shown, the heating section 1 may include an inner heating zone 101 and an annular outer heating zone 102. Among them, the inner heating zone 101 may be provided at a position corresponding to the central area of the wafer 100. The annular outer heating zone 102 may be generally constructed in a ring shape to generally surround the outside of the inner heating zone 101 and be concentrically arranged with the inner heating zone 101. The temperatures of the inner heating zone 101 and the annular outer heating zone 102 can be controlled respectively through the interface section 2 to precisely control the temperature curves of different areas on the heating section 1, so that the heat distribution on the surface of the heating section 1 is uniform, ensuring that the film generated on the surface of the wafer 100 has good uniformity and deposition characteristics.

[0033] In order to enable the inner heating zone 101 and the annular outer heating zone 102 to generate heat, refer to Figure 5As shown, the ceramic heating element 13 may include a first heating element 131 and a second heating element 132. Among them, the first heating element 131 may be disposed in the inner heating zone 101, and the second heating element 132 may be disposed in the annular outer heating zone 102. The first heating element 131 and the second heating element 132 may be respectively communicatively connected to the control module through the heating element wire 21 passing through the interface portion 2 to achieve separate control of the temperatures of the inner heating zone 101 and the annular outer heating zone 102.

[0034] To further improve the durability of the ceramic heating element 13, the outer surface of the ceramic heating element 13 may be coated with an anti-wear coating. Specifically, the anti-wear coating may be an amorphous carbon layer. The amorphous carbon layer not only has high hardness, high wear resistance and good toughness to improve the anti-wear ability of the ceramic heating element 13, but also has high thermal conductivity to improve the heat transfer efficiency of the ceramic heating element 13.

[0035] To make the connection between the upper heating plate 12 and the lower heating plate 11 reliable, refer to Figure 3 As shown, the heating portion 1 may further include a brazing preform 14 disposed between the peripheral edge of the upper heating plate 12 and the peripheral edge of the lower heating plate 11. The upper heating plate 12 and the lower heating plate 11 may be welded and fixed through the brazing preform 14 to form a permanent and reliable seal between the upper heating plate 12 and the lower heating plate 11.

[0036] To ensure a reliable electrical connection between the ceramic heating element 13 and the heating element wire 21, the ceramic heating element 13 may be connected to the heating element wire 21 through a high melting point terminal (not shown). The high melting point terminal may be made of a material with a relatively high melting point to withstand the high temperature from the ceramic heating element 13 and reduce the risk of failure at the connection point with the heating element wire 21.

[0037] Furthermore, a terminal protection cover (not shown) may be provided on the high melting point terminal to prevent the high melting point terminal from being damaged from the outside.

[0038] To make the ceramic heating element 13 evenly distributed between the upper heating plate 12 and the lower heating plate 11, the ceramic heating element 13 may be configured to have a multi-turn concentric circle structure. Specifically, refer to Figure 2 As shown, the ceramic heating element 13 may be coiled in a serpentine shape between the upper heating plate 12 and the lower heating plate 11, and one side wall of the ceramic heating element 13 is parallel to the upper surface of the upper heating plate 12. In this way, not only can the ceramic heating element 13 be evenly distributed between the upper heating plate 12 and the lower heating plate 11, but also the contact area between the ceramic heating element 13 and the upper heating plate 12 can be maximized, thereby further improving the evenness of the heat distribution on the upper surface of the upper heating plate 12.

[0039] Since the wafer 100 is a circular sheet structure, refer to Figure 1and Figure 2 As shown, the heating part 1 can also be configured as a disc-shaped structure accordingly, that is, both the upper heating plate 12 and the lower heating plate 11 can be disc-shaped structures, and the interface part 2 can be arranged at the central position of the bottom of the heating part 1.

[0040] To facilitate controlling the temperature of the annular outer heating zone 102 through the interface part 2, referring to Figure 5 As shown, a radially extending avoidance notch can be formed on the inner heating zone 101, and a part of the annular outer heating zone 102 can penetrate into the avoidance notch to approach the central position of the heating part 1.

[0041] Accordingly, the first heating element 131 can be serpentinely wound in the inner heating zone 101 to fill the inner heating zone 101, so that the heat generation area of the first heating element 131 in the inner heating zone 101 is maximized, and the second heating element 132 can be serpentinely wound in the annular outer heating zone 102 to fill the annular outer heating zone 102, so that the heat generation area of the second heating element 132 in the annular outer heating zone 102 is maximized.

[0042] Referring to Figures 2 to 4 As shown, the heating part 1 can further include a bottom plate 15, the lower heating plate 11 can be stacked on the bottom plate 15, the interface part 2 can be configured as a vertically extending sleeve-like structure to facilitate the passage of wires, the upper end of the interface part 2 can be fixedly connected to the bottom plate 15, and the bottom plate 15 can separate the interface part 2 from the lower heating plate 11 to reduce the heat transfer from the lower heating plate 11 to the interface part 2, thereby avoiding the failure and damage of the interface part 2 due to high temperature. The end of the ceramic heating element 13 can pass through the lower heating plate 11 and the bottom plate 15 and extend into the interface part 2 to be connected to the heating element wire 21.

[0043] To avoid the heating element wire 21 transferring heat to the wires of other surrounding components, referring to Figure 3 and Figure 4 As shown, a ceramic shaft 22 can also be arranged in the interface part 2, the heating element wire 21 passes through the ceramic shaft 22, and the ceramic shaft 22 can insulate the heating element wire 21. Among them, the ceramic shaft 22 can be fixed to the inner wall of the interface part 2 through a high melting point and high strength plastic.

[0044] Based on the above technical solutions, the present disclosure also provides a chemical vapor deposition system. Referring to Figure 1 As shown, the chemical vapor deposition system can include a reaction chamber 200 and the wafer heater in the above technical solution. The heating part 1 can be accommodated in the reaction chamber 200, and the external power supply and / or the control module can be arranged outside the reaction chamber 200 to avoid the high temperature in the reaction chamber 200 affecting the operation of the control module. The interface part 2 can extend out of the reaction chamber 200 to facilitate the wires of each component in the heating part 1 to pass through the interface part 2 and be connected to the external power supply and / or the control module.

[0045] Through the above technical solutions, the chemical vapor deposition system provided by the present disclosure has the same technical effects as the wafer heater in the above technical solutions. To avoid unnecessary repetition, it will not be elaborated here.

[0046] The preferred embodiments of the present disclosure have been described in detail above in conjunction with the accompanying drawings. However, the present disclosure is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.

[0047] In addition, it should be noted that, among the various specific technical features described in the above specific embodiments, they can be combined in any appropriate manner without conflict. To avoid unnecessary repetition, the present disclosure will not separately describe various possible combination methods.

[0048] Furthermore, any combination can be made between various different embodiments of the present disclosure as long as it does not violate the idea of the present disclosure, and it should also be regarded as the content disclosed by the present disclosure.

Claims

1. A wafer heater, characterized in that: include: The heating part comprises: Lower heating plate, an upper heating plate, stacked on the lower heating plate, for placing the wafer, and A ceramic heating element is embedded between the upper heating plate and the lower heating plate, and the cross section of the ceramic heating element is rectangular. as well as The interface portion is arranged at the bottom of the heating portion, and the ceramic heating element is configured to be electrically connected to an external power source through a heating element wire passing through the interface portion.

2. The wafer heater according to claim 1, characterized in that: The outer surface of the ceramic heating element is coated with a protective coating.

3. The wafer heater according to claim 2, characterized in that: The protective coating is an amorphous carbon layer.

4. The wafer heater according to claim 1, characterized in that: The heating portion further includes a brazing preform disposed between the periphery of the upper heating plate and the periphery of the lower heating plate, and the upper heating plate and the lower heating plate are fixed by welding through the brazing preform.

5. The wafer heater according to claim 1, characterized in that: The ceramic heating element is connected to the heating element lead through a high melting point terminal.

6. The wafer heater according to claim 1, characterized in that: The ceramic heating element is constructed as a structure with multiple concentric circles.

7. The wafer heater according to claim 1 or 6, characterized in that: The ceramic heating element is coiled in a serpentine shape between the upper heating plate and the lower heating plate.

8. The wafer heater according to claim 1, characterized in that: The heating unit further comprises a bottom plate, and the lower heating plate is stacked on the bottom plate. The interface portion is constructed as a vertically extending sleeve-shaped structure, the upper end of which is fixedly connected to the base plate, and the end of the ceramic heating element passes through the lower heating plate and the base plate and extends into the interface portion to be connected to the heating element wire.

9. The wafer heater according to claim 8, characterized in that: A ceramic shaft is also provided in the interface portion, and the ceramic shaft can insulate the heating element wire.

10. A chemical vapor deposition system, characterized in that: include: reaction chamber, and The wafer heater according to any one of claims 1 to 9, wherein the heating portion is accommodated in the reaction chamber, and the interface portion extends from the reaction chamber.

Images