Supporting device for wafer passivation process and transfer equipment with same

Abstract

The utility model provides a supporting device used for a wafer passivation technology and a transfer device with the same, and the supporting device used for the wafer passivation technology comprises a pedestal; the first supporting piece is arranged on the base, a first guiding part is arranged on the first supporting piece, and the first guiding part is used for being matched with the wafer or the baffle in a guiding mode; the second supporting piece and the first supporting piece are arranged on the base in a spaced mode, a second guiding part is arranged on the second supporting piece, and the second guiding part is matched with the wafer or the baffle in a guiding mode; wherein an accommodating area for accommodating a wafer or a baffle plate is formed between the first supporting piece and the second supporting piece. According to the technical scheme of the invention, the problem that the wafer or the baffle plate is not liable to slide into the accommodation area in the prior art is effectively solved.

Description

Technical Field

[0001] The utility model relates to the field of power semiconductor device chip manufacturing, and in particular to a supporting device for a wafer passivation process and a transport device having the supporting device. Background Art

[0002] In the manufacturing process of power semiconductor devices, the terminal passivation process is a key step to ensure the high withstand voltage, stability and reliability of the device. In the traditional mesa terminal passivation process, for the whole wafer power device after corner grinding, due to the change of wafer diameter and the lack of alignment marks, it is very challenging to use conventional semiconductor process equipment for film formation, lithography and etching processes.

[0003] In the prior art, multiple limiting pillars can be set to form a receiving area between the multiple limiting pillars, and the wafer can be placed between the multiple receiving areas, and then the wafer can be transferred to the passivation process chamber. The limiting pillars are generally cylindrical, and when the wafer is placed between the multiple limiting pillars, the positions of the wafer and the multiple limiting pillars need to be aligned before the wafer can be placed, which makes it difficult for the wafer to slide into the receiving area.

[0004] When passivating the wafer, a baffle needs to be placed on the wafer. The movement process of the baffle is similar to that of the wafer, and it also needs to be transferred to the passivation process chamber from the accommodation area surrounded by multiple limit pillars. The accommodation area where the baffle is located is different from the accommodation area where the wafer is located. When placing the baffle between multiple limit pillars, the positions of the baffle and the multiple limit pillars need to be aligned before the baffle can be placed, which makes it difficult for the baffle to slide into the accommodation area. Utility Model Content

[0005] The main purpose of the utility model is to provide a support device for a wafer passivation process and a transfer device having the same, so as to solve the problem in the related art that the wafer or the baffle is not easy to slide into the accommodating area.

[0006] In order to achieve the above-mentioned purpose, according to one aspect of the utility model, a support device for a wafer passivation process is provided, including: a base; a first support member, which is arranged on the base, and a first guide portion is provided on the first support member, and the first guide portion is used to cooperate with the wafer or baffle guide; a second support member, which is arranged on the base at an interval with the first support member, and a second guide portion is provided on the second support member, and the second guide portion cooperates with the wafer or baffle guide; wherein a accommodating area for accommodating a wafer or a baffle is formed between the first support member and the second support member.

[0007] Further, the first support member includes a first support column, the first guide portion includes a first guide slope, and the first guide slope is arranged at an end of the first support column away from the base.

[0008] Furthermore, the first support column includes a first support section and a limiting section, the first support section is arranged between the limiting section and the base, the first guide slope is arranged at one end of the limiting section away from the first support section, and the diameter of the first support section is larger than the diameter of the limiting section, so that a first support platform is formed between the first support section and the limiting section, and the first support platform is used to support the wafer or the baffle.

[0009] Furthermore, the second support member includes a second support column, the second guide portion includes a second guide slope, the second guide slope is arranged on the top of the second support column, and a second support platform connected to the second guide slope is arranged on the second support column, and the second support platform is used to support the wafer or the baffle.

[0010] Furthermore, the support device for the wafer passivation process also includes a third support member arranged on the base, the third support member, the first support member and the second support member are all arranged at intervals, and a third guide portion is provided on the third support member, and at least one of the third guide portion, the second guide portion and the first guide portion cooperates with the wafer or baffle guide to move the wafer or baffle into the accommodating area.

[0011] Furthermore, the third support member includes a third support column, the third guide portion includes a third guide slope, the third guide slope is arranged on the top of the third support column, and a third support platform connected to the third guide slope is arranged on the third support column, and the third support platform is used to support the wafer or the baffle.

[0012] Furthermore, the first support column also includes a second support section, which is arranged between the first support section and the base, and the diameter of the second support section is larger than the diameter of the first support section, so that a fourth support platform is formed between the second support section and the first support section, and the fourth support platform is used to support the wafer or the baffle.

[0013] Furthermore, a fourth guiding slope is provided at one end of the first supporting section close to the limiting section.

[0014] Furthermore, the base includes a connecting member and a substrate, the connecting member is arranged below the substrate, and the first supporting member and the second supporting member are arranged on the substrate at intervals.

[0015] According to another aspect of the utility model, a transfer device is provided, including a base frame, a robotic arm and a support device for a wafer passivation process. The robotic arm is arranged on the base frame to drive the wafer or the baffle to move. The support device for the wafer passivation process is the above-mentioned support device for the wafer passivation process.

[0016] By applying the technical solution of the utility model, a support device for a wafer passivation process includes a base, a first support member arranged on the base, and a second support member arranged on the base. The first support member and the second support member are arranged at intervals. A first guide portion is arranged on the first support member, and a second guide portion is arranged on the second support member, and the first guide portion and the second guide portion are both used to cooperate with the wafer or baffle guide. A holding area for holding the wafer or the baffle is formed between the first support member and the second support member. Through the above-mentioned arrangement, the base can support the first support member and the second support member. When the wafer or the baffle moves from outside the holding area to inside the holding area, at least one of the first guide portion and the second guide portion can guide the movement of the wafer or the baffle, so that the wafer or the baffle can move more smoothly into the holding area. Therefore, the technical solution of the present application effectively solves the problem in the related art that the wafer or the baffle is not easy to slide into the holding area. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings constituting part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings:

[0018] Figure 1 A schematic diagram of the three-dimensional structure of an embodiment of a support device for a wafer passivation process according to the utility model is shown;

[0019] Figure 2 Shows Figure 1 A schematic diagram of the three-dimensional structure of the first supporting member of the supporting device;

[0020] Figure 3 Shows Figure 1 A schematic diagram of the three-dimensional structure of the second supporting member of the supporting device;

[0021] Figure 4 Shows Figure 1 A schematic diagram of the three-dimensional structure of a third supporting member of the supporting device;

[0022] Figure 5 A three-dimensional structural schematic diagram of another embodiment of a support device for a wafer passivation process according to the utility model is shown;

[0023] Figure 6 Shows Figure 5 A schematic diagram of the three-dimensional structure of the first supporting member of the supporting device;

[0024] Figure 7 A schematic diagram of the three-dimensional structure of another embodiment of the support device for wafer passivation process according to the utility model is shown;

[0025] Figure 8A three-dimensional structural schematic diagram of an embodiment of a transfer device according to the utility model is shown.

[0026] The above drawings include the following reference numerals:

[0027] 10. Base; 11. Connecting member; 12. Base plate; 20. First supporting member; 21. First guiding portion; 211. First guiding slope; 22. First supporting column; 221. First supporting section; 2211. Fourth guiding slope; 222. Limiting section; 223. Second supporting section; 23. First supporting platform; 24. Fourth supporting platform; 30. Second supporting member; 31. Second guiding portion; 311. Second guiding slope; 32. Second supporting column; 33. Second supporting platform; 40. Third supporting member; 41. Third guiding portion; 411. Third guiding slope; 42. Third supporting column; 43. Third supporting platform. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means a limitation on the utility model and its application or use. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0029] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0030] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the utility model. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0031] like Figures 1 to 3 As shown, the support device of the wafer passivation process of this embodiment includes: a base 10, a first support member 20 and a second support member 30. The first support member 20 is arranged on the base 10, and a first guide portion 21 is arranged on the first support member 20, and the first guide portion 21 is used to cooperate with the wafer or baffle guide. The second support member 30 is arranged on the base 10 at a distance from the first support member 20, and a second guide portion 31 is arranged on the second support member 30, and the second guide portion 31 cooperates with the wafer or baffle guide. Among them, a accommodating area for accommodating a wafer or a baffle is formed between the first support member 20 and the second support member 30.

[0032] Applying the technical solution of this embodiment, the support device for the wafer passivation process includes a base 10, a first support member 20 arranged on the base 10, and a second support member 30 arranged on the base 10. The first support member 20 and the second support member 30 are arranged at intervals. A first guide portion 21 is arranged on the first support member 20, and a second guide portion 31 is arranged on the second support member 30. The first guide portion 21 and the second guide portion 31 are both used to cooperate with the wafer or baffle guide. A holding area for holding the wafer or baffle is formed between the first support member 20 and the second support member 30. Through the above-mentioned arrangement, the base 10 can support the first support member 20 and the second support member 30. When the wafer or baffle moves from outside the holding area to the holding area, at least one of the first guide portion 21 and the second guide portion 31 can guide the movement of the wafer or baffle, so that the wafer or baffle can move more smoothly into the holding area. Therefore, the technical solution of this embodiment effectively solves the problem that the wafer or baffle is not easy to slide into the holding area in the related art.

[0033] like Figure 2As shown, in this embodiment, the first support member 20 includes a first support column 22, and the first guide portion 21 includes a first guide slope 211, and the first guide slope 211 is arranged at an end of the first support column 22 away from the base 10. The first guide slope 211 can guide the movement of the wafer or the baffle. The first guide slope 211 is arranged at an end of the first support column 22 away from the base 10, so that the wafer or the baffle can move from the end of the first support column 22 away from the base 10 to the accommodating area under the action of its own gravity. The first support column 22 can limit the wafer or the baffle.

[0034] The first support column 22 is made of Teflon or peek material, which has a low friction coefficient. When the wafer or baffle contacts it, the friction is small and does not hinder the wafer or baffle from sliding down. The material is corrosion-resistant and high-temperature-resistant and does not generate particles.

[0035] like Figure 2 As shown, in this embodiment, the first support column 22 includes a first support section 221 and a limiting section 222, the first support section 221 is arranged between the limiting section 222 and the base 10, the first guide slope 211 is arranged at one end of the limiting section 222 away from the first support section 221, and the diameter of the first support section 221 is larger than the diameter of the limiting section 222, so that a first support platform 23 is formed between the first support section 221 and the limiting section 222, and the first support platform 23 is used to support a wafer or a baffle. The first support section 221 can support a wafer or a baffle. The limiting section 222 can limit the side of the wafer or the baffle, so that the wafer or the baffle can be stably placed in the accommodating area. The diameter of the first support section 221 is greater than the diameter of the limiting section 222, so that in the radial direction of the first support section 221, the first support section 221 can protrude from the limiting section 222, and then the part of the structure of the first support section 221 protruding from the limiting section 222 can support the wafer or the baffle, that is, the first support platform 23 can support the wafer or the baffle.

[0036] The width of the first supporting platform 23 is between 2 mm and 5 mm, that is, the radius difference between the first supporting section 221 and the limiting section 222 is between 2 mm and 5 mm.

[0037] The width of the first supporting platform 23 may be 2 mm, 3 mm, 4 mm or 5 mm. In this embodiment, the width of the first supporting platform 23 is 3 mm.

[0038] like Figure 3As shown, in this embodiment, the second support member 30 includes a second support column 32, and the second guide portion 31 includes a second guide slope 311. The second guide slope 311 is arranged on the top of the second support column 32. A second support platform 33 connected to the second guide slope 311 is arranged on the second support column 32, and the second support platform 33 is used to support the wafer or the baffle. The second guide slope 311 can guide the movement of the wafer or the baffle, so that the wafer or the baffle can move more smoothly to the second support platform 33, so that the second support platform 33 can support the wafer or the baffle.

[0039] like Figure 1 and Figure 4 As shown, in this embodiment, the support device for the wafer passivation process also includes a third support member 40 disposed on the base 10, the third support member 40, the first support member 20 and the second support member 30 are all arranged at intervals, and the third support member 40 is provided with a third guide portion 41, and at least one of the third guide portion 41, the second guide portion 31 and the first guide portion 21 cooperates with the wafer or baffle guide to move the wafer or baffle into the accommodation area. By providing the first support member 20, the second support member 30 and the third support member 40, the wafer or baffle can be moved into the accommodation area more smoothly and placed in the accommodation area more stably.

[0040] like Figure 4 As shown, in this embodiment, the third support member 40 includes a third support column 42, and the third guide portion 41 includes a third guide slope 411. The third guide slope 411 is arranged on the top of the third support column 42. The third support column 42 is provided with a third support platform 43 connected to the third guide slope 411. The third support platform 43 is used to support the wafer or the baffle. The third guide slope 411 can guide the movement of the wafer or the baffle, so that the wafer or the baffle moves to the third support platform 43 more smoothly.

[0041] An accommodating area is formed between the first supporting platform 23, the second supporting platform 33 and the third supporting platform 43. The cross section of the accommodating area is circular, and the difference between the diameter of the accommodating area and the diameter of the wafer or the baffle is between 2 mm and 3 mm, specifically, 2 mm, 2.5 mm or 3 mm.

[0042] There can be a plurality of third support members 40, and the plurality of third support members 40 are spaced and evenly arranged. A receiving area is formed between the third support platform of each third support member 40, the first support platform 23 and the second support platform 33.

[0043] The second support column 32 , the third support column 42 and the first support column 22 are made of the same material.

[0044] The first support platform 23, the second support platform 33 and the third support platform 43 are all provided with reflective photoelectric sensors for detecting whether the wafer or the baffle has been placed on the boss. The reflective photoelectric sensor arranged on the first support platform 23 is lower than the surface of the first support platform 23, the reflective photoelectric sensor arranged on the second support platform 33 is lower than the surface of the second support platform 33, and the reflective photoelectric sensor arranged on the third support platform 43 is lower than the surface of the third support platform 43, that is, holes for accommodating reflective photoelectric sensors are arranged on the first support platform 23, the second support platform 33 and the third support platform 43.

[0045] like Figure 5 and Figure 6 As shown, in another embodiment, the first support column 22 further includes a second support section 223, which is disposed between the first support section 221 and the base 10, and the diameter of the second support section 223 is greater than the diameter of the first support section 221, so that a fourth support platform 24 is formed between the second support section 223 and the first support section 221, and the fourth support platform 24 is used to support a wafer or a baffle. The second support section 223 can support the first support section 221 and the limiting section 222. The fourth support platform 24 can support a wafer or a baffle.

[0046] The first support column 22, the second support column 32 and the third support column 42 have the same structure. The fourth support platform 24 of the first support column 22, the fourth support platform of the second support column 32 and the fourth support platform of the third support column 42 form a limiting area. The axis of the first support column 22, the axis of the second support column 32 and the axis of the third support column 42 are on the same circle.

[0047] When the wafer and the baffle are placed on the same supporting device, the wafer is placed in the accommodating area, that is, the first supporting platform 23 is used to support the wafer, and the baffle is placed in the limiting area, that is, the fourth supporting platform 24 is used to support the baffle. The limiting area is located between the accommodating area and the base 10. The difference between the diameter of the accommodating area and the diameter of the wafer is between 2mm and 3mm, specifically, it can be 2mm, 2.5mm or 3mm. The difference between the diameter of the limiting area and the diameter of the baffle is between 2mm and 3mm, specifically, it can be 2mm, 2.5mm or 3mm.

[0048] The width of the fourth supporting platform 24 is between 2 mm and 5 mm, that is, the radius difference between the second supporting segment 223 and the first supporting segment 221 is between 2 mm and 5 mm.

[0049] The width of the fourth supporting platform 24 may be 2 mm, 3 mm, 4 mm or 5 mm. In this embodiment, the width of the fourth supporting platform 24 is 3 mm.

[0050] like Figure 5 and Figure 6 As shown, in another embodiment, a fourth guiding slope 2211 is provided at one end of the first supporting section 221 close to the limiting section 222. The fourth guiding slope 2211 can guide the movement of the wafer or the baffle, so that the wafer or the baffle moves to the fourth supporting platform 24 more smoothly.

[0051] The angles of the first guiding slope 211 , the second guiding slope 311 , the third guiding slope 411 and the fourth guiding slope 2211 are 75°, and the vertical height is 1 cm.

[0052] like Figure 1 As shown, in this embodiment, the base 10 includes a connecting member 11 and a base plate 12, the connecting member 11 is arranged below the base plate 12, and the first support member 20 and the second support member 30 are arranged on the base plate 12 at intervals. The connecting member 11 facilitates the connection of the supporting device. The base plate 12 can support the first support member 20 and the second support member 30.

[0053] It should be noted that the connecting member 11 includes a first connecting plate and a second connecting plate, and the second connecting plate is connected between the first connecting plate and the base plate 12. The first connecting plate and the second connecting plate are arranged at an angle. The angle between the first connecting plate and the second connecting plate is 80° to 110°, specifically, it can be 80°, 90°, 100° or 110°. In this embodiment, the first connecting plate and the second connecting plate are arranged vertically.

[0054] The base 10 can be connected to the position where the support device is installed through the first connecting plate. Specifically, threaded holes can be provided on the first connecting plate, and the base 10 can be connected to the position where the support device is installed through bolts.

[0055] The base 10 is made of stainless steel.

[0056] The center of the circle where the axis of the first support column 22 , the axis of the second support column 32 and the axis of the third support column 42 lie is the center of the substrate 12 .

[0057] The support device for wafer passivation process of this embodiment is used for transferring wafers and baffles to the process chamber. The position of the base 10 is fixed, which is convenient for the robot arm to find the position, so that the robot arm can more accurately drive the wafer or baffle to move.

[0058] like Figure 7 As shown, in another embodiment, a first support member 20, a second support member 30 and a third support member 40 form a group, and two groups can be set on the base 10, and the two groups are arranged at intervals, one group is used to support the wafer, and the other group is used to support the baffle.

[0059] For whole wafer devices, after the corner grinding and shaping, the diameter changes, and there is no longer the alignment mark (Flat or Notch) of the standard wafer, which makes it difficult to use traditional semiconductor process equipment for film formation, photolithography, and etching. Therefore, in the traditional integrated gate-commutated thyristor chip table terminal passivation process, manual methods are mostly used to manually place the device in the reaction chamber and manually place the central shield (i.e., baffle) to achieve passivation film growth on the edge of the device terminal.

[0060] With the continuous development of power electronics technology, the process consistency and reliability requirements of power devices are getting higher and higher, and the requirements for terminal passivation technology are getting higher and higher. Compared with the existing integrated gate-commutated thyristor chip terminal passivation process, its main shortcomings are:

[0061] (1) Conventional semiconductor equipment cannot automatically transfer wafers after cutting and chamfering. Manual operations such as opening the cavity, placing the wafer, and placing the baffle can easily cause chamber contamination, chip contamination, and scratches, affecting device reliability.

[0062] (2) Manual placement of the center baffle can easily cause position deviation;

[0063] (3) Loading and unloading (i.e., placing and removing wafers) are all done manually, resulting in low production efficiency.

[0064] In the thin film deposition process with center shielding, a robotic arm is used to realize automatic film transmission, and the wafer and baffle are automatically aligned through a three-pin candlestick structure to ensure the concentricity of the wafer and baffle placement and achieve precise process positioning. A reflective photoelectric sensor is set on the support device to accurately identify whether the wafer is accurately placed. The process is all automated, and no unnecessary surface contamination, scratches, or offsets are caused by human errors. During the process, the wafer and baffle are automatically transmitted and monitored by the equipment, and production efficiency is improved.

[0065] The transfer equipment of this embodiment mainly solves the technical defects existing in the terminal passivation technology of the whole wafer power device chip, and proposes a transfer equipment, which includes a wafer terminal passivation center alignment device, that is, a support device for the wafer passivation process, and realizes automatic centering of the wafer and the baffle through a three-pin candlestick structure (that is, the first support member 20, the second support member 30 and the third support member 40), and then the wafer and the baffle on the support device are driven by a robotic arm to move, and the wafer or the baffle is transferred to the process chamber. The movement of the wafer and the baffle is realized automatically, and the placement position of the wafer and the baffle is more accurate, so that the stability of the passivation process and the production efficiency are improved.

[0066] like Figure 8As shown, the transfer equipment of this embodiment includes a chassis, a mechanical arm and a support device for a wafer passivation process. The mechanical arm is arranged on the chassis to drive the wafer or baffle to move. The support device for the wafer passivation process is the above-mentioned support device for the wafer passivation process. A first guide portion 21 is arranged on the first support member 20 of the support device, and a second guide portion 31 is arranged on the second support member 30. The wafer or baffle can cooperate with at least one of the first guide portion 21 and the second guide portion 31, so that the wafer or baffle can be moved more smoothly into the accommodation area. The transfer equipment with the above-mentioned support device also has the above-mentioned advantages. The mechanical arm can drive the movement of the wafer and the baffle, and can make the placement position of the wafer and the baffle more accurate. It can also avoid that when passivation is performed, the operator manually puts the wafer and the baffle into the process chamber, which easily causes the wafer and the baffle to be contaminated and scratched.

[0067] One side of the support device used for the wafer passivation process can be used for the robot arm to enter and exit to take and place the wafer or baffle. When the wafer or baffle is located between the first support member 20, the second support member 30 and the third support member 40, since the positions of the first support member 20, the second support member 30 and the third support member 40 are fixed, it is convenient for the robot arm to move, and when the robot arm drives the wafer or baffle to move, it can move more accurately according to the path from the position of the support device to the position where the wafer or baffle is to be placed, thereby making the movement of the wafer or baffle more accurate, and the position of the baffle on the wafer more accurate, which is convenient for passivation of the wafer. The diameter of the baffle is smaller than the diameter of the wafer. When the wafer and the baffle are placed in the process chamber, the baffle is located above the wafer.

[0068] The robot arm includes a first robot arm and a second robot arm.

[0069] The transfer device also includes a base, and the connecting piece is connected to the base. Figure 8 As shown, the wafer and the baffle can be respectively arranged on two different supporting devices. The two supporting devices are arranged on the base at intervals. Of course, in other embodiments, the wafer and the baffle can be respectively arranged on the same supporting device, in which case the first supporting column 22 includes a second supporting section 223.

[0070] When the wafer and the baffle are placed on different supporting devices, that is, the wafer is placed on the first supporting device and the baffle is placed on the second supporting device, the terminal area is SiO2-treated by the transfer device of this embodiment. 2 Or SiN x Or DLC film or SiO 2 、SiN x The passivation process of the combination of DLC film is as follows:

[0071] (1) The first robot picks up the wafer and places it into the first supporting device for precise positioning;

[0072] (2) The second robot picks up the wafer and places it into the process chamber;

[0073] (3) The first manipulator picks up the baffle and places it into the second supporting device for precise positioning;

[0074] (4) The second robot picks up the baffle, puts it into the process chamber, and places the baffle directly above the wafer;

[0075] (5) Close the process chamber door and start the thin film deposition process;

[0076] (6) After the thin film deposition process is completed, the second robot takes the baffle from the process chamber and places it into the second support device for positioning;

[0077] (7) The first manipulator moves the baffle to the first designated station;

[0078] (8) The second robot takes the wafer from the process chamber and places it into the first support device for precise positioning;

[0079] (9) The first robot moves the wafer to the second designated station.

[0080] When the wafer and the baffle are placed on the same support device, the terminal area is SiO2-treated using the transfer device of this embodiment. 2 or SiN x Or DLC film or SiO 2 、SiN x The passivation process of the combination of DLC film is as follows:

[0081] (1) The first robot picks up the wafer and places it into the support device for precise positioning;

[0082] (2) The second robot picks up the wafer and places it into the process chamber;

[0083] (3) The first manipulator picks up the baffle and places it into the support device for precise positioning;

[0084] (4) The second robot picks up the baffle, puts it into the process chamber, and places the baffle directly above the wafer;

[0085] (5) Close the process chamber door and start the thin film deposition process;

[0086] (6) After the thin film deposition process is completed, the second robot takes the baffle from the process chamber and places it in the support device for positioning;

[0087] (7) The first manipulator moves the baffle to the first designated station;

[0088] (8) The second robot takes the wafer from the process chamber and places it into the support device for precise positioning;

[0089] (9) The first robot moves the wafer to the second designated station.

[0090] In the description of the present invention, it is necessary to understand that "plurality" refers to a quantity of two or more than two. The orientation or positional relationship indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, vertical, horizontal" and "top, bottom" are usually based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise stated, these directional words do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they cannot be understood as limiting the scope of protection of the present invention; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0091] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein are interpreted accordingly.

[0092] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the utility model.

[0093] The above description is only the preferred embodiment of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A support device for a wafer passivation process, characterized in that: include: Base (10); A first support member (20) is arranged on the base (10), wherein the first support member (20) is provided with a first guide portion (21), and the first guide portion (21) is used to cooperate with a wafer or a baffle guide; a second support member (30) arranged on the base (10) at a distance from the first support member (20), the second support member (30) being provided with a second guide portion (31), the second guide portion (31) being in cooperation with the wafer or the baffle guide; Wherein, a receiving area for receiving the wafer or the baffle is formed between the first supporting member (20) and the second supporting member (30).

2. The support device for wafer passivation process according to claim 1, characterized in that: The first support member (20) comprises a first support column (22), the first guide portion (21) comprises a first guide slope (211), and the first guide slope (211) is arranged at an end of the first support column (22) away from the base (10).

3. The support device for wafer passivation process according to claim 2, characterized in that: The first supporting column (22) comprises a first supporting section (221) and a limiting section (222); the first supporting section (221) is arranged between the limiting section (222) and the base (10); the first guiding inclined surface (211) is arranged at an end of the limiting section (222) away from the first supporting section (221); the diameter of the first supporting section (221) is greater than the diameter of the limiting section (222), so that a first supporting platform (23) is formed between the first supporting section (221) and the limiting section (222); the first supporting platform (23) is used to support the wafer or the baffle.

4. The support device for wafer passivation process according to claim 3, characterized in that: The second support member (30) comprises a second support column (32), the second guide portion (31) comprises a second guide slope (311), the second guide slope (311) is arranged on the top of the second support column (32), and the second support column (32) is provided with a second support platform (33) connected to the second guide slope (311), and the second support platform (33) is used to support the wafer or the baffle.

5. The support device for wafer passivation process according to claim 4, characterized in that: The support device for the wafer passivation process also includes a third support member (40) arranged on the base (10), the third support member (40), the first support member (20) and the second support member (30) are all arranged at intervals, and the third support member (40) is provided with a third guide portion (41), and at least one of the third guide portion (41), the second guide portion (31) and the first guide portion (21) cooperates with the wafer or the baffle guide to move the wafer or the baffle into the accommodating area.

6. The support device for wafer passivation process according to claim 5, characterized in that: The third support member (40) comprises a third support column (42), the third guide portion (41) comprises a third guide slope (411), the third guide slope (411) is arranged on the top of the third support column (42), and the third support column (42) is provided with a third support platform (43) connected to the third guide slope (411), and the third support platform (43) is used to support the wafer or the baffle.

7. The support device for wafer passivation process according to claim 3, characterized in that: The first support column (22) further comprises a second support section (223), wherein the second support section (223) is arranged between the first support section (221) and the base (10), and the diameter of the second support section (223) is greater than the diameter of the first support section (221), so that a fourth support platform (24) is formed between the second support section (223) and the first support section (221), and the fourth support platform (24) is used to support the wafer or the baffle.

8. The support device for wafer passivation process according to claim 7, characterized in that: A fourth guiding inclined surface (2211) is provided at one end of the first supporting section (221) close to the limiting section (222).

9. The support device for wafer passivation process according to any one of claims 1 to 8, characterized in that: The base (10) comprises a connecting member (11) and a base plate (12); the connecting member (11) is arranged below the base plate (12); and the first supporting member (20) and the second supporting member (30) are arranged on the base plate (12) at intervals.

10. A transfer device, comprising a base frame, a mechanical arm and a support device for a wafer passivation process, wherein the mechanical arm is arranged on the base frame to drive the wafer or the baffle to move, characterized in that: The supporting device for wafer passivation process is the supporting device for wafer passivation process according to any one of claims 1 to 9.

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