Shielding frame structure and chemical vapor deposition device
By designing a double-layer structure shading frame structure and guide structure, the problem of easy deformation and wear of the shielding cover plate in the prior art is solved, and the uniformity and yield of the deposited film are improved.
Patent Information
- Application Number
- CN202421999770.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-08-16
AI Technical Summary
In the existing chemical vapor deposition devices, the shielding cover plate is prone to deform and wear, resulting in plasma leakage, uneven thickness of the deposited film, and the substrate may be damaged due to offset.
A double-layer structure shading frame structure is designed, connecting the shading frame and the support frame through connecting parts to improve structural strength and stability, and a guide structure is set on the outside of the shading plate and support plate to ensure the stable up and down movement of the shading frame structure.
It effectively reduces the deformation rate and wear of the shading frame structure, prevents plasma leakage and deposition film fall, and improves the uniformity and yield of the deposition film.
Smart Images
Figure CN222923229U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of display device manufacturing, in particular to a shielding frame structure and a chemical vapor deposition device including the shielding frame structure. Background Art
[0002] In the manufacturing process of display devices, CVD (Chemical Vapor Deposition) is widely used in the preparation of display panels. Chemical vapor deposition refers to the process of forming a deposition film by depositing a plasma formed after ionization of chemical gases on a substrate.
[0003] As Figure 1 shown, in the existing chemical vapor deposition device, a bracket 2' and a shielding cover plate 3' are provided on the inner wall of the reaction chamber 1'. The shielding cover plate 3' is of an annular structure and is supported and fixed in the reaction chamber 1' by the bracket 2'. After the substrate 5' enters the reaction chamber 1', the lower electrode 4' drives the substrate 5' to move upward until the edge of the substrate 5' contacts the shielding cover plate 3' and drives the shielding cover plate 3' to rise together, using the shielding cover plate 3' to cover the edge of the substrate 5' to prevent the formation of a deposition film on the edge of the substrate 5' to meet the manufacturing process requirements.
[0004] The existing technology has the following deficiencies:
[0005] Due to the high temperature in the reaction chamber 1' and the frequent change of air pressure, it is easy to cause the deformation of the shielding cover plate 3'; and due to the frequent lifting and lowering of the shielding cover plate 3', mechanical wear will occur, resulting in uneven stress on different positions of the shielding cover plate 3', which is also easy to cause the deformation of the shielding cover plate 3'. During the reaction process, the shielding cover plate 3' does not completely fit the edge of the substrate 5', resulting in plasma leakage, so that the thickness of the deposition film on the substrate 5' is uneven, and poor phenomena such as mottling occur; when the deformed shielding cover plate 3' moves up and down, it will cause the substrate 5' to shift, resulting in damage to the substrate 5' during the movement. When the shielding cover plate 3' is severely deformed, the edge of the substrate 5' will be exposed to form a deposition film, and this phenomenon will cause stress changes in the deposition film, resulting in the peeling off of the deposition film. Summary of the Utility Model
[0006] An object of the utility model is to provide a shielding frame structure with high structural stability and not easy to deform.
[0007] Another object of the utility model is to provide a chemical vapor deposition device that can improve the yield of the deposition film.
[0008] To achieve the above object, the utility model adopts the following technical solutions:
[0009] A provided shielding frame structure is installed in the reaction chamber of a chemical vapor deposition device. A bracket is provided on the inner wall of the reaction chamber, and a liftable lower electrode is provided in the reaction chamber. The shielding frame structure includes a shielding frame, a support frame, and a connecting member. The shielding frame is used to shield the edge of the substrate placed on the lower electrode. The shielding frame and the support frame are arranged at intervals. The shielding frame is an annular structure composed of a plurality of shielding plates, and the support frame is an annular structure composed of a plurality of support plates. The shielding frame is located above the support frame, and the shielding frame is connected to the support frame through the connecting member. The support frame is placed on the bracket. The width of the shielding plate is greater than the width of the support plate, and the inner side of the shielding plate extends beyond the inner side of the support plate. The inner side of the support plate is spaced from the outer side of the lower electrode.
[0010] As a further solution of the shielding frame structure, the connecting member includes a plurality of first connecting pipes, which are distributed at intervals along the length direction of the support plate, and the first connecting pipes are respectively vertically connected to the shielding plate and the support plate.
[0011] As a further solution of the shielding frame structure, the connecting member further includes a plurality of second connecting pipes, which are inclined and respectively connected to the shielding plate and the support plate.
[0012] As a further solution of the shielding frame structure, the connection point of the first connecting pipe and the shielding plate is the first connection node, the connection point of the first connecting pipe and the support plate is the second connection node, the connection point of the second connecting pipe and the shielding plate is the third connection node, and the connection point of the second connecting pipe and the support plate is the fourth connection node. The third connection node is adjacent to the first connection node or coincides with at least part of the first connection node, and the fourth connection node is adjacent to the second connection node or coincides with at least part of the second connection node.
[0013] As a further solution of the shielding frame structure, each shielding plate and the support plate directly below it form a group. Between the corresponding upper and lower support plates and shielding plates in each group, a plurality of first connecting pipes are evenly distributed along the length direction of the support plate. One of the first connecting pipes is connected to the midpoint of the support plate along the length direction, and a plurality of second connecting pipes are symmetric with respect to the first connecting pipe at the midpoint.
[0014] As a further solution of the shielding frame structure, the outer diameter of the first connecting pipe is greater than the outer diameter of the second connecting pipe.
[0015] As a further solution of the shielding frame structure, the top surface and the inner side surface of the shielding plate are transitioned through an inclined surface or an arc surface.
[0016] As a further solution of the shielding frame structure, a first guide structure is provided on the outer side of the shielding frame and / or the outer side of the supporting frame, and a second guide structure is provided on the inner wall of the reaction chamber, and the first guide structure cooperates with the second guide structure.
[0017] As a further solution of the shielding frame structure, the first guide structure is located at the midpoint of the shielding plate along the length direction and / or the midpoint of the supporting plate along the length direction.
[0018] On the other hand, a chemical vapor deposition device is provided, which has a reaction chamber, wherein the inner wall of the reaction chamber is provided with a bracket, a liftable lower electrode is provided in the reaction chamber, and the reaction chamber also includes the shielding frame structure, and the support frame of the shielding frame structure is placed on the bracket.
[0019] Compared with the prior art, the utility model has the following beneficial effects:
[0020] The utility model designs the shielding frame structure as a double-layer structure, and the double-layer structure is connected by a connecting piece. The connecting piece supports the shielding frame located on the upper layer and the supporting frame located on the lower layer at the same time, which can improve the structural strength of the shielding frame and the supporting frame at the same time and reduce the deformation rate of the shielding frame and the supporting frame. After the shielding frame shields the upper edge of the substrate, after the chemical vapor deposition reaction, the probability of the deposited film extending to the edge of the substrate can be effectively reduced, and the phenomenon of the deposited film falling off is not likely to occur. In addition, the thickness of the deposited film is uneven, and it is not easy to have undesirable phenomena such as streaks, thereby improving the yield of the deposited film.
[0021] The utility model arranges a first guide structure on the outer side of the shielding plate and / or the supporting plate and a second guide structure on the inner wall of the reaction chamber. When the lower electrode drives the substrate to rise and lift the shielding frame, the sliding cooperation between the first guide structure and the second guide structure can make the up and down movement of the shielding frame structure more stable, prevent the shielding frame structure from shifting in the horizontal direction, and avoid damage to the substrate due to the shift of the shielding frame structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] The utility model is further described in detail below based on the drawings and embodiments.
[0023] Figure 1 It is a cross-sectional view of a chemical vapor deposition device in the prior art.
[0024] Figure 2 It is a cross-sectional view of a chemical vapor deposition device according to an embodiment of the present invention.
[0025] Figure 3 for Figure 2 A partial enlarged view of part A.
[0026] Figure 4This is a side view schematic diagram of the shielding frame structure of the embodiment of the present utility model along the Figure 2 P direction in
[0027] Figure 5 This is a bottom view schematic diagram of the shielding frame structure of the embodiment of the present utility model.
[0028] Figure 1 In which:
[0029] 1', reaction chamber; 2', bracket; 3', shielding cover plate; 4', lower electrode; 5', substrate.
[0030] Figures 2 to 5 In which:
[0031] 100, shielding frame structure; 110, shielding frame; 111, shielding plate; 1111, top surface; 1112, inner side surface; 1113, inclined surface; 120, support frame; 121, support plate; 130, connecting member; 131(131a - 131e), first connecting pipe; 132(132a - 132f), second connecting pipe; 140, first guiding structure; 200, reaction chamber; 210, second guiding structure; 300, bracket; 400, lower electrode; 500, substrate. Detailed implementation manners
[0032] Referring to the embodiments described in detail below with reference to the drawings, the advantages and features of the present utility model and the methods for realizing them will become apparent. However, the present utility model is not limited to the embodiments disclosed below, but can be implemented in various different forms. Providing this embodiment is only to complete the disclosure of the present utility model and enable those skilled in the art to fully understand the scope of the present utility model, and the present utility model is only defined by the scope of the claims. The same reference numerals represent the same components throughout the specification.
[0033] Hereinafter, the present utility model will be described in detail with reference to the drawings.
[0034] As Figures 2 to 5As shown in the figure, this embodiment provides a shielding frame structure 100, which is installed in the reaction chamber 200 of a chemical vapor deposition apparatus. A bracket 300 is provided on the inner wall of the reaction chamber 200, and a liftable lower electrode 400 is provided at the bottom of the reaction chamber 200. The shielding frame structure 100 includes a shielding frame 110, a support frame 120, and a connecting member 130. The shielding frame 110 is used to shield the edge of the substrate 500 placed on the lower electrode 400. The shielding frame 110 and the support frame 120 are arranged at intervals. The shielding frame 110 is an annular structure composed of a plurality of shielding plates 111, and the support frame 120 is an annular structure composed of a plurality of support plates 121. The inner side of the support plate 121 is spaced from the outer side of the lower electrode 400. The shielding frame 110 is located above the support frame 120, and the shielding frame 110 is connected to the support frame 120 through the connecting member 130. The support frame 120 is placed on the bracket 300. The width of the shielding plate 111 is greater than the width of the support plate 121, and the inner side of the shielding plate 111 extends beyond the inner side of the support plate 121.
[0035] Wherein, the inner side of the shielding plate 111 refers to the side of the shielding plate 111 away from the inner wall of the reaction chamber 200, and the inner side of the support plate 121 refers to the side of the support plate 121 away from the inner wall of the reaction chamber 200.
[0036] The width of the shielding plate 111 is greater than the width of the support plate 121, and the inner side of the shielding plate 111 extends beyond the inner side of the support plate 121. The inner side of the support plate 121 is spaced from the outer side of the lower electrode 400. With this structural design, it can be prevented that the lower electrode 400 touches the support plate 121 when driving the substrate 500 to rise, so that the upper edge of the substrate 500 abuts against the bottom of the shielding plate 111 when the lower electrode 400 drives the substrate 500 to rise.
[0037] Compared with the existing single-layer shielding cover structure, in this embodiment, the shielding frame structure 100 is designed as a double-layer structure. The double-layer structures are connected through the connecting member 130. The connecting member 130 simultaneously supports the shielding frame 110 located in the upper layer and the support frame 120 located in the lower layer, which can improve the structural strength of the shielding frame 110 and the support frame 120 at the same time and reduce the deformation rate of the shielding frame 110 and the support frame 120. After the shielding frame 110 shields the upper edge of the substrate 500, the probability of the deposited film extending to the edge of the substrate 500 can be reduced after the chemical vapor deposition reaction.
[0038] Next, taking the rectangular substrate 500 as an example, this embodiment will be further described in detail.
[0039] For the rectangular substrate 500, the shielding frame 110 is an annular structure composed of four shielding plates 111. Similarly, the support frame 120 is also an annular structure composed of four support plates 121.
[0040] Furthermore, the connecting member 130 includes a plurality of first connecting pipes 131 (such asFigure 4 Among 131a - 131e), the first connecting pipes 131 are distributed at intervals along the length direction of the support plate 121, and the first connecting pipes 131 are respectively vertically connected to the shielding plate 111 and the support plate 121. The shielding plate 111 is connected to the support plate 121 through a plurality of first connecting pipes 131 arranged at intervals, which improves the structural strength of both the shielding plate 111 and the support plate 121. Optionally, the first connecting pipe 131 is designed with a hollow structure, which can prevent the shielding frame structure 100 from being too heavy. Of course, in other embodiments, without considering the weight of the shielding frame structure 100, the first connecting pipe 131 can also be designed as a solid rod-shaped structure.
[0041] In some embodiments, the first connecting pipe 131 can be an aluminum alloy pipe, and a layer of aluminum oxide film is plated on its outer periphery, which can endow the first connecting pipe 131 with good anti-corrosion effect.
[0042] As Figure 4 shown, the connecting member 130 further includes a plurality of second connecting pipes 132 (i.e., 132a - 132f), the second connecting pipes 132 are inclined, and are respectively connected to the shielding plate 111 and the support plate 121. The second connecting pipes 132 are inclined, which can provide an oblique pulling force to the shielding plate 111 and the support plate 121. The combination of the second connecting pipes 132 and the first connecting pipes 131 can further improve the structural strength of the shielding plate 111 and the support plate 121.
[0043] Specifically, the second connecting pipe 132 is an aluminum alloy pipe, and a layer of aluminum oxide film is plated on its outer periphery, which can endow the second connecting pipe 132 with good anti-corrosion effect. Optionally, the second connecting pipe 132 is designed with a hollow structure, which can prevent the shielding frame structure 100 from being too heavy. Of course, in other embodiments, without considering the weight of the shielding frame structure 100, the second connecting pipe 132 can also be designed as a solid rod-shaped structure.
[0044] Furthermore, in order to further improve the structural strength of the shielding plate 111 and the support plate 121, in this embodiment, the shielding frame structure 100 is designed to be similar to a "cable-stayed beam" structure. The "cable-stayed beam" structure is a mature and stable structure in the field of mechanical components, and will not be elaborated here.
[0045] As Figure 4As shown, in this embodiment, the connection point between the first connecting pipe 131 and the shielding plate 111 is taken as the first connection node, the connection point between the first connecting pipe 131 and the support plate 121 is taken as the second connection node, the connection point between the second connecting pipe 132 and the shielding plate 111 is taken as the third connection node, and the connection point between the second connecting pipe 132 and the support plate 121 is taken as the fourth connection node. The third connection node coincides with at least part of the first connection node, and the fourth connection node coincides with at least part of the second connection node. By arranging the second connecting pipe 132 obliquely, and a first connecting pipe 131 is connected at every connection point between the second connecting pipe 132 and the shielding plate 111, and a first connecting pipe 131 is connected at every connection point between the second connecting pipe 132 and the support plate 121. The combination of the second connecting pipe 132 and the first connecting pipe 131 is used to connect the shielding plate 111 and the support plate 121 to form a "cable-stayed beam" structure, which can make the structures of the shielding plate 111 and the support plate 121 more stable.
[0046] In other embodiments, it can also be designed such that the third connection node is adjacent to the first connection node, and the fourth connection node is adjacent to the second connection node, which can also improve the structural stability of the shielding plate 111 and the support plate 121 to a certain extent.
[0047] Each shielding plate 111 and the support plate 121 directly below it form a group. Between the corresponding support plate 121 and shielding plate 111 in each group, multiple first connecting pipes 131 are evenly distributed along the length direction of the support plate 121. One of the first connecting pipes 131 is connected to the midpoint of the support plate 121 along the length direction, and multiple second connecting pipes 132 are symmetric with respect to the first connecting pipe 131 at the midpoint.
[0048] In this embodiment, the shielding frame structure 100 is designed as a "cable-stayed beam" structure, so that even when facing high temperature, mechanical vibration, and wear for a long time, the shielding frame structure 100 can still achieve the purpose of being stable and not deformed, effectively preventing the problem of low deposition film at the corresponding position caused by plasma leakage. It improves the utilization rate of plasma, reduces the number of equipment maintenance times, and achieves the purpose of cost savings.
[0049] Taking one group of corresponding support plate 121 and shielding plate 111 as an example, as Figure 4As shown, the baffle 111 is connected to the support plate 121 through five first connecting pipes 131 (the first connecting pipes 131a, 131b, 131c, 131d, and 131e are distributed at intervals from left to right). The five first connecting pipes 131 are evenly distributed at intervals. The second connecting pipes 132 (the second connecting pipes 132a, 132b, 132c, 132d, 132e, and 132f) are inclined. Among them, the second connecting pipes 132a and 132d are symmetric with respect to the first connecting pipe 131c, the second connecting pipes 132b and 132e are symmetric with respect to the first connecting pipe 131c, and the second connecting pipes 132c and 132f are symmetric with respect to the first connecting pipe 131c. Among them, the third connection node of the second connecting pipe 132a and the baffle 111 is located at the first connection node of the first connecting pipe 131a and the baffle 111, and the fourth connection node of the second connecting pipe 132a and the support plate 121 is located at the second connection node of the first connecting pipe 131b and the support plate 121. The third connection node of the second connecting pipe 132b and the baffle 111 is located at the first connection node of the first connecting pipe 131a and the baffle 111, and the fourth connection node of the second connecting pipe 132b and the support plate 121 is located at the second connection node of the first connecting pipe 131c and the support plate 121. The third connection node of the second connecting pipe 132c and the baffle 111 is located at the first connection node of the first connecting pipe 131c and the baffle 111, and the fourth connection node of the second connecting pipe 132c and the support plate 121 is located at the second connection node of the first connecting pipe 131b and the support plate 121. Since the second connecting pipes 132a, 132b, and 132c are symmetric with respect to the first connecting pipe 131c with the second connecting pipes 132d, 132e, and 132f respectively, the specific connection position relationship between the second connecting pipes 132d, 132e, and 132f and the baffle 111 and the support plate 121 will not be elaborated herein.
[0050] Of course, the above is only an example. The number of the first connecting pipes 131 and the second connecting pipes 132 is not limited to this, and can be determined according to the lengths of the support plate 121 and the baffle 111. Which first connection node the third connection node specifically coincides with and which second connection node the fourth connection node specifically coincides with can also be adjusted according to the actual situation, and will not be elaborated herein.
[0051] In this embodiment, the outer diameter of the first connecting pipe 131 is larger than that of the second connecting pipe 132. The first connecting pipe 131 mainly plays a supporting role and has a relatively large diameter, while the second connecting pipe 132 mainly plays a stretching role and can have a relatively small diameter. The cooperation of support and stretching can effectively improve the structural stability of the shielding plate 111 and the support plate 121 and reduce deformation.
[0052] In order to prevent the reaction gas from remaining on the shielding plate 111 during chemical vapor deposition, in this embodiment, the top surface 1111 and the inner side surface 1112 of the shielding plate 111 are designed to be transitioned through an inclined surface 1113, which can enable the reaction gas to smoothly flow along the inclined surface to the substrate 500. In other embodiments, the top surface 1111 and the inner side surface 1112 of the shielding plate 111 can also be transitioned through an arc surface.
[0053] Further, a first guiding structure 140 is provided on the outer side of the shielding frame 110 and / or the outer side of the support frame 120, and a second guiding structure 210 is provided on the inner wall of the reaction chamber 200. The first guiding structure 140 and the second guiding structure 210 are in guiding cooperation.
[0054] Further, the outer sides of the shielding plate 111 and the support plate 121 are flush. The outer side of the shielding plate 111 refers to the side of the shielding plate 111 close to the inner wall of the reaction chamber 200, and the outer side of the support plate 121 refers to the side of the support plate 121 close to the inner wall of the reaction chamber 200. Further, first guiding structures 140, such as sliders, are respectively provided on the outer sides of the two opposite shielding plates 111 of the shielding frame 110 and / or the outer sides of the two opposite support plates 121 of the support frame 120. A second guiding structure 210, such as a chute, is provided on the inner wall of the reaction chamber 200. The chutes and the sliders are in one-to-one correspondence. The chutes are located above the bracket 300, and the length of the chutes extends in the vertical direction. The sliders are slidably engaged with the chutes. Of course, in other embodiments, the positions of the sliders and the chutes can also be interchanged, or the first guiding structure 140 can be designed as a guide rail or a roller, which will not be elaborated herein.
[0055] By providing chutes (second guiding structures 210) on the inner wall of the reaction chamber 200 and sliders (first guiding structures 140) on the outer sides of the shielding frame 110 and the support frame 120, when the lower electrode 400 drives the substrate 500 to rise and lift the shielding frame 110, the cooperation of the sliders and the chutes can make the up and down movement of the shielding frame structure 100 more stable and prevent the shielding frame structure 100 from shifting in the horizontal direction.
[0056] Further, the slider (first guiding structure 140) is located at the midpoint of the shielding plate 111 in the length direction and / or the midpoint of the support plate 121 in the length direction, which can further improve the stability of the up and down movement of the shielding frame structure 100.
[0057] This embodiment also provides a chemical vapor deposition device. Refer to Figure 2 , the chemical vapor deposition device has a reaction chamber 200. The chemical vapor deposition device includes a bracket 300, a lower electrode 400, and the shielding frame structure 100 of the above embodiment. The bracket 300 is fixed to the inner wall of the reaction chamber 200. The lower electrode 400 is vertically movable in the reaction chamber 200. The support frame 120 of the shielding frame structure 100 is placed on the bracket 300. A substrate 500 is placed on the lower electrode 400. When the lower electrode 400 rises, the substrate 500 on the lower electrode 400 can abut against the bottom of the shielding frame 110 of the shielding frame structure 100.
[0058] The shielding frame structure 100 of this embodiment has high structural stability and is not easily deformed even when it is in a high temperature condition for a long time. The mechanical wear has little effect on it when it moves up and down. Therefore, when using the chemical vapor deposition device of this embodiment to fabricate a deposition film on the substrate 500, the thickness of the deposition film is uniform, and there will be no problem of the deposition film peeling off, effectively improving the yield of the deposition film.
[0059] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be manufactured in various forms. And those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or basic characteristics of the present invention. Therefore, it should be understood that the above embodiments are exemplary in all aspects and not restrictive.
Claims
1. A shielding frame structure is installed in a reaction chamber of a chemical vapor deposition device, wherein the inner wall of the reaction chamber is provided with a bracket, and a lower electrode that can be raised and lowered is provided in the reaction chamber, characterized in that: The shielding frame structure includes a shielding frame, a supporting frame and a connecting member, the shielding frame is used to shield the edge of the substrate placed on the lower electrode, the shielding frame and the supporting frame are spaced apart, the shielding frame is an annular structure composed of a plurality of shielding plates, the supporting frame is an annular structure composed of a plurality of supporting plates, the shielding frame is located above the supporting frame, and the shielding frame is connected to the supporting frame through the connecting member, the supporting frame is placed on the bracket, the width of the shielding plate is greater than the width of the supporting plate, and the inner side of the shielding plate exceeds the inner side of the supporting plate, and the inner side of the support plate is spaced apart from the outer side of the lower electrode.
2. The shielding frame structure according to claim 1, characterized in that: The connecting member includes a plurality of first connecting tubes, which are spaced apart along the length direction of the supporting plate, and the first connecting tubes are respectively vertically connected to the shielding plate and the supporting plate.
3. The shielding frame structure according to claim 2, characterized in that: The connecting member further comprises a plurality of second connecting pipes, which are arranged at an angle and are respectively connected to the shielding plate and the supporting plate.
4. The shielding frame structure according to claim 3, characterized in that: The connection point between the first connecting tube and the shielding plate is a first connection node, the connection point between the first connecting tube and the support plate is a second connection node, the connection point between the second connecting tube and the shielding plate is a third connection node, and the connection point between the second connecting tube and the support plate is a fourth connection node. The third connection node is adjacent to the first connection node or overlaps with at least part of the first connection node, and the fourth connection node is adjacent to the second connection node or overlaps with at least part of the second connection node.
5. The shielding frame structure according to claim 4, characterized in that: Each of the baffle plates and the support plate directly below it form a group, and between each group of corresponding support plates and baffle plates, a plurality of the first connecting tubes are evenly distributed along the length direction of the support plate, one of the first connecting tubes is connected to the midpoint of the support plate along the length direction, and a plurality of the second connecting tubes are symmetrical with respect to the first connecting tube at the midpoint.
6. The shielding frame structure according to claim 3, characterized in that: An outer diameter of the first connecting pipe is greater than an outer diameter of the second connecting pipe.
7. The shielding frame structure according to any one of claims 1 to 6, characterized in that: The top surface and the inner side surface of the shielding plate are transitioned through an inclined surface or an arc surface.
8. The shielding frame structure according to any one of claims 1 to 6, characterized in that: A first guide structure is provided on the outer side of the shielding frame and / or the outer side of the supporting frame, and a second guide structure is provided on the inner wall of the reaction chamber, and the first guide structure cooperates with the second guide structure in a guiding manner.
9. The shielding frame structure according to claim 8, characterized in that: The first guide structure is located at a midpoint of the shielding plate along the length direction and / or a midpoint of the support plate along the length direction.
10. A chemical vapor deposition device, comprising a reaction chamber, wherein the inner wall of the reaction chamber is provided with a support, and a lower electrode that can be raised and lowered is provided in the reaction chamber, wherein: The reaction chamber also includes the shielding frame structure according to any one of claims 1 to 9.