Chemical vapor deposition equipment
By installing a plasma source generation device on the top and side walls of the process chamber of the chemical vapor deposition equipment, and induced charged particles by using the magnetic field generator to solve the problem that existing equipment is difficult to thoroughly clean the quadrilateral film of the chamber side wall and the base, achieving more efficient chamber cleaning.
Patent Information
- Application Number
- CN202422057968.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-23
- Publication Date
- 2025-05-30
- Estimated Expiration
- 2034-08-23
AI Technical Summary
When existing chemical vapor deposition equipment cleans the interior of the chamber, it is difficult to thoroughly clean the residual film at the side walls of the chamber and the four corners of the base.
A chemical vapor deposition device is designed, by installing a plasma source generation device on the top wall of the process chamber, and plasma cleaning gas is introduced into the reaction chamber through the first and second connecting pipes, respectively, from the top wall and the side wall. At the same time, a magnetic field generator is set up to induce charged particles in the cleaning gas to make circular motions, cover more positions, and enhance cleaning capabilities.
Complete cleaning of the interior of the chamber is achieved, improving cleaning efficiency and cleanliness of the chamber.
Smart Images
Figure CN222923231U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a chemical vapor deposition device. Background Art
[0002] Chemical vapor deposition is a technology for depositing a solid thin film on the surface of a substrate through a chemical reaction. This technology is widely used in the semiconductor industry for manufacturing various thin film materials, such as metals, insulators, and semiconductors. As Figure 1 shown, the chemical vapor deposition device includes a chamber 001 and a base 002 located inside the chamber 001.
[0003] Among them, after multiple chemical vapor depositions, there will be residual films 003 on the inner surface of the chamber 001, and etching cleaning needs to be carried out using cleaning gases such as plasma gas. In the prior art, an RPSC (Remote Plasma Source Clean) device 004 is usually installed on the top of the chamber 001. However, since the cleaning gas only diffuses from the middle position of the chamber, it is difficult to clean the residual films 003 at positions such as the side walls of the chamber 001 and the four corners of the base 002.
[0004] Therefore, there is an urgent need to provide a chemical vapor deposition device to solve the above problems. Summary of the Utility Model
[0005] The purpose of the utility model is to provide a chemical vapor deposition device that can thoroughly clean the inside of the chamber, improve the cleaning efficiency and the cleanliness of the chamber.
[0006] To achieve the above purpose, the following technical solutions are provided:
[0007] A chemical vapor deposition device, comprising:
[0008] A process chamber having a reaction chamber, an air inlet interface is provided on the top wall of the process chamber, and the air inlet interface is communicated with the reaction chamber;
[0009] A plasma source generating device is provided on the top wall of the process chamber;
[0010] A first connecting pipe, one end of the first connecting pipe is communicated with the plasma source generating device, and the other end of the first connecting pipe is communicated with the air inlet interface;
[0011] A second connecting pipe, one end of the second connecting pipe is communicated with the plasma source generating device, and the other end of the second connecting pipe is connected to the side wall of the process chamber and is communicated with the reaction chamber;
[0012] A magnetic field generating device is disposed at the bottom outside the process chamber for generating magnetic induction lines extending in a first direction.
[0013] As an alternative to the chemical vapor deposition equipment, a strip-shaped diffusion plate extending in the first direction is embedded in the side wall. One end of the second connecting pipe is communicated with the strip-shaped diffusion plate, and a plurality of diffusion holes are provided on the strip-shaped diffusion plate.
[0014] As an alternative to the chemical vapor deposition equipment, a plurality of the diffusion holes are arranged at intervals in the first direction on the strip-shaped diffusion plate.
[0015] As an alternative to the chemical vapor deposition equipment, multiple groups of the diffusion holes are arranged in an array on the strip-shaped diffusion plate, and / or
[0016] The inner diameter of the diffusion hole is not greater than 0.5 mm.
[0017] As an alternative to the chemical vapor deposition equipment, a plurality of the strip-shaped diffusion plates are arranged at circumferential intervals on the side wall, and all the plurality of strip-shaped diffusion plates are communicated with the second connecting pipe.
[0018] As an alternative to the chemical vapor deposition equipment, the side wall is of an arc-shaped structure.
[0019] As an alternative to the chemical vapor deposition equipment, the process chamber further includes a switch door which is hinged to the side wall of the process chamber for opening or closing the reaction chamber.
[0020] As an alternative to the chemical vapor deposition equipment, a first switch valve is serially arranged on the first connecting pipe, and / or
[0021] A second switch valve is serially arranged on the second connecting pipe.
[0022] As an alternative to the chemical vapor deposition equipment, the magnetic field generating device includes a DC power supply module and a coil. Two ends of the coil are respectively electrically connected to the DC power supply module, and an intermediate section of the coil is spirally wound around the axis of the process chamber.
[0023] As an alternative to the chemical vapor deposition equipment, the magnetic field generating device further includes a protective shell, and both the DC power supply module and the coil are arranged in the protective shell.
[0024] Compared with the prior art, the beneficial effects of the present utility model:
[0025] The chemical vapor deposition equipment provided by the present utility model is equipped with a plasma source generating device on the top wall of the process chamber. The plasma source generating device introduces plasma cleaning gas into the reaction chamber from the top wall and the side wall of the process chamber through the first connecting pipe and the second connecting pipe respectively. The cleaning gas can not only diffuse from the middle of the process chamber to the surroundings, but also diffuse from the side of the process chamber to the surrounding area, enabling the cleaning gas to disperse to every corner of the reaction chamber, which helps to thoroughly clean the inside of the process chamber and improve the cleanliness of the chamber. By arranging a magnetic field generating device at the bottom of the process chamber that can generate magnetic induction lines extending in the first direction, the magnetic field in the vertical direction induces the charged particles in the cleaning gas to move in a circular or curved path inside the process chamber. This will cause the charged particles in the plasma gas to cover more positions inside the process chamber. On the one hand, the charged particles inside the process chamber will further collide under the action of the magnetic field force, achieving a more sufficient ionization effect and further enhancing the cleaning ability. On the other hand, the charged particles in the cleaning gas introduced from the outside of the process chamber move in a circular path along the inner wall surface of the side wall under the action of the magnetic field force, thereby achieving the purpose of cleaning the periphery of the reaction chamber and improving the cleaning efficiency of the plasma source generating device for the process chamber. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model, the following will briefly introduce the drawings required for the description in the embodiments of the present utility model. Obviously, the following drawings are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to the content of the embodiments of the present utility model and these drawings.
[0027] Figure 1 is a schematic structural diagram of the chemical vapor deposition equipment in the background art;
[0028] Figure 2 is a schematic structural diagram of the chemical vapor deposition equipment in the embodiment of the present utility model;
[0029] Figure 3 is a top view (the top wall is not shown) of the chemical vapor deposition equipment in the embodiment of the present utility model;
[0030] Figure 4 is a schematic structural diagram of the strip-shaped diffusion plate in the embodiment of the present utility model;
[0031] Figure 5 is an assembly schematic diagram of the second connecting pipe and the strip-shaped diffusion plate in the embodiment of the present utility model.
[0032] REFERENCE MARKS:
[0033] 001, Chamber; 002, Base; 003, Residual film; 004, RPSC device;
[0034] 1, Process chamber; 11, Inlet interface; 12, Top wall; 13, Side wall; 14, Switching door; 15, Reaction chamber; 2, Plasma source generating device; 3, First connecting pipe; 4, Second connecting pipe; 5, Magnetic field generating device; 51, DC power supply module; 52, Coil; 521, Magnetic induction line; 53, Protective shell; 6, Strip-shaped diffusion plate; 61, Diffusion hole; 7, Second switching valve; 8, First switching valve. Detailed implementation mode
[0035] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all of the embodiments. Usually, the components of the embodiments of the present utility model described and shown in the accompanying drawings here can be arranged and designed in various different configurations.
[0036] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the utility model product is usually placed when in use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present utility model. In addition, the terms "first", "second", "third", etc. are only used for distinguishing descriptions, and cannot be understood as indicating or implying relative importance. In the description of the present utility model, unless otherwise stated, the meaning of "plural" is two or more.
[0037] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and limited, the terms "set" and "connect" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0038] The embodiments of the present utility model will be described in detail below. The examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions from beginning to end. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present utility model, and should not be construed as a limitation of the present utility model.
[0039] To avoid contamination of the chamber caused by the peeling off of the film layer and reduce the manual cleaning of the chamber, a Remote Plasma Source Clean (RPSC) device is usually installed at the top of the chamber. The RPSC device delivers a cleaning gas (such as F ions) to the chemical vapor deposition chamber through a pipeline, which is used to clean the residual film formed inside the chemical vapor deposition chamber (for example, etching the residual films such as silicon dioxide and silicon nitride inside the chamber with F ions). However, since the cleaning gas in the prior art only diffuses from the middle position of the chamber, it is difficult to clean the residual films at positions such as the side walls and the four corners of the base of the chamber.
[0040] In order to thoroughly clean the inside of the chamber, improve the cleaning efficiency and the cleanliness of the chamber, this embodiment provides a chemical vapor deposition device. The following will be combined with Figures 2 to 5 to describe the specific content of this embodiment in detail. It should be noted that the first direction, the vertical direction, and the height direction mentioned in this embodiment are all Figure 2 and Figure 4 the Z direction in
[0041] As Figure 2 combined with Figure 3 shown, the chemical vapor deposition device in this embodiment includes a process chamber 1, a plasma source generation device 2, a first connection pipeline 3, a second connection pipeline 4, and a magnetic field generation device 5. The process chamber 1 has a reaction chamber, and an air inlet interface 11 is provided on the top wall 12 of the process chamber 1, and the air inlet interface 11 communicates with the reaction chamber. The plasma source generation device 2 is arranged on the top wall 12 of the process chamber 1. One end of the first connection pipeline 3 is communicated with the plasma source generation device 2, and the other end of the first connection pipeline 3 is communicated with the air inlet interface 11. One end of the second connection pipeline 4 is communicated with the plasma source generation device 2, and the other end of the second connection pipeline 4 is connected to the side wall 13 of the process chamber 1 and communicates with the reaction chamber. The magnetic field generation device 5 is arranged at the bottom outside the process chamber 1 and is used to generate magnetic induction lines 521 extending in the first direction.
[0042] The chemical vapor deposition equipment provided by the present utility model is equipped with a plasma source generating device 2 on the top wall 12 of the process chamber 1. The plasma source generating device 2 introduces plasma cleaning gas into the reaction chamber from the top wall 12 and the side wall 13 of the process chamber 1 through the first connecting pipe 3 and the second connecting pipe 4 respectively. The cleaning gas can not only diffuse from the middle of the process chamber 1 to the surroundings, but also diffuse from the side of the process chamber 1 to the surroundings, enabling the cleaning gas to disperse to every corner of the reaction chamber, which helps to thoroughly clean the inside of the process chamber 1 and improve the cleanliness of the chamber. By arranging a magnetic field generating device 5 at the bottom of the process chamber 1 that can generate magnetic induction lines 521 extending in the first direction, the magnetic field in the vertical direction induces the charged particles in the cleaning gas to move in a circular or curved path inside the process chamber 1. This will enable the charged particles in the plasma gas to cover more positions inside the process chamber 1. On the one hand, the charged particles inside the process chamber 1 will further collide under the action of the magnetic field force, achieving a more sufficient ionization effect and further enhancing the cleaning ability. On the other hand, the charged particles in the cleaning gas introduced from the outside of the process chamber 1 move in a circular path along the inner wall surface of the side wall 13 under the action of the magnetic field force, thereby achieving the purpose of cleaning the periphery of the reaction chamber and improving the cleaning efficiency of the plasma source generating device 2 for the process chamber 1.
[0043] Further, as Figures 2 to 5 shown, a strip-shaped diffusion plate 6 extending in the first direction is embedded in the side wall 13. One end of the second connecting pipe 4 is communicated with the strip-shaped diffusion plate 6, and a plurality of diffusion holes 61 are arranged on the strip-shaped diffusion plate 6. The strip-shaped diffusion plate 6 extends along the height direction of the process chamber 1, facilitating the introduction of cleaning gas into the reaction chamber from the top to the bottom of the side wall 13 and improving the cleaning efficiency. The plurality of diffusion holes 61 are evenly arranged on the strip-shaped diffusion plate 6, facilitating the uniform distribution of the cleaning gas in the reaction chamber. The interface end of the second connecting pipe 4 connected to the strip-shaped diffusion plate 6 is of a conical structure, facilitating the diffusion of the cleaning gas in the direction close to the strip-shaped diffusion plate 6.
[0044] Exemplarily, a plurality of diffusion holes 61 are arranged at intervals in the first direction on the strip-shaped diffusion plate 6, and the plurality of diffusion holes 61 form a group, facilitating the introduction of cleaning gas from the top to the bottom along the inner wall surface of the side wall 13.
[0045] Exemplarily, multiple groups of diffusion holes 61 are arranged in an array on the strip-shaped diffusion plate 6, and / or the inner diameter of the diffusion holes 61 is not greater than 0.5 mm. By adding multiple groups of diffusion holes 61, it is convenient to quickly and evenly introduce the cleaning gas from the side of the process chamber 1. Since the inner diameter of the diffusion holes 61 is not greater than 0.5 mm, it is convenient for the uniform distribution of the cleaning gas.
[0046] Optionally, a plurality of strip-shaped diffusion plates 6 are circumferentially spaced on the side wall 13, and the plurality of strip-shaped diffusion plates 6 are all communicated with the second connecting pipe 4. By adding the plurality of strip-shaped diffusion plates 6, it helps to further improve the speed and concentration of the cleaning gas introduced into the reaction chamber, and improve the cleaning efficiency.
[0047] Furthermore, in this embodiment, as Figure 2 shown in combination with Figure 3 the figure, the side wall 13 is an arc-shaped structure, which avoids blocking the circular motion of charged particles and improves the cleaning effect of the cleaning gas.
[0048] Furthermore, the process chamber 1 further includes a switch door 14, and the switch door 14 is hinged to the side wall 13 of the process chamber 1 for opening or closing the reaction chamber. By adding the switch door 14, it is convenient to take and place products. When the switch door 14 is closed, external air cannot enter the reaction chamber 15, ensuring good sealing of the process chamber 1.
[0049] Optionally, a first switch valve 8 is serially arranged on the first connecting pipe 3, and / or a second switch valve 7 is serially arranged on the second connecting pipe 4. By adding the first switch valve 8 and the second switch valve 7, it is convenient for the operator to control the on-off of the first connecting pipe 3 and the second connecting pipe 4 according to actual needs. The first connecting pipe 3 and the second connecting pipe 4 can be pipes made of aluminum oxide.
[0050] Exemplarily, in this embodiment, the magnetic field generating device 5 includes a DC power supply module 51 and a coil 52. The two ends of the coil 52 are respectively electrically connected to the DC power supply module 51, and the middle section of the coil 52 is spirally wound around the axis of the process chamber 1. The current of the DC power supply module 51 is connected to the coil 52. Through the spiral winding of the coil 52, it is convenient to generate magnetic induction lines 521 vertically upward or vertically downward for inducing charged particles to perform circular motion.
[0051] Optionally, the magnetic field generating device 5 further includes a protective shell 53, and the DC power supply module 51 and the coil 52 are both arranged in the protective shell 53. The protective shell 53 is used to protect the DC power supply module 51 and the coil 52 from being damaged by collision, ensuring the normal operation of the magnetic field generating device 5.
[0052] Note that the above is only the preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here. Various obvious changes, re-adjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Without departing from the concept of the present invention, more other equivalent embodiments can be included, and the scope of the present invention is determined by the scope of the appended claims.
Claims
1. Chemical vapor deposition equipment, characterized in that include: A process chamber, comprising a reaction chamber, wherein a gas inlet interface is arranged on the top wall of the process chamber, and the gas inlet interface is communicated with the reaction chamber; A plasma source generating device is arranged on the top wall of the process chamber; a first connecting pipe, one end of which is connected to the plasma source generating device, and the other end of which is connected to the gas inlet interface; a second connecting pipe, one end of which is connected to the plasma source generating device, and the other end of which is connected to the side wall of the process chamber and connected to the reaction chamber; The magnetic field generating device is arranged at the bottom outside the process chamber and is used for generating magnetic flux lines extending along a first direction.
2. The chemical vapor deposition equipment according to claim 1, characterized in that: A strip diffusion plate extending along the first direction is embedded on the side wall, one end of the second connecting pipe is connected to the strip diffusion plate, and a plurality of diffusion holes are arranged on the strip diffusion plate.
3. The chemical vapor deposition equipment according to claim 2, characterized in that: A plurality of the diffusion holes are arranged on the strip-shaped diffusion plate at intervals along a first direction.
4. The chemical vapor deposition equipment according to claim 3, characterized in that: The strip-shaped diffusion plate is provided with a plurality of groups of diffusion holes in an array, and / or The inner diameter of the diffusion hole is no greater than 0.5 mm.
5. The chemical vapor deposition equipment according to claim 2, characterized in that: A plurality of the strip-shaped diffusion plates are circumferentially arranged at intervals on the side wall, and the plurality of the strip-shaped diffusion plates are all in communication with the second connecting pipe.
6. The chemical vapor deposition equipment according to claim 1, characterized in that: The side wall is an arc-shaped structure.
7. The chemical vapor deposition equipment according to claim 1, characterized in that: The process chamber further comprises a switch door, which is hinged to the side wall of the process chamber and is used to open or close the reaction chamber.
8. The chemical vapor deposition equipment according to claim 1, characterized in that: The first connecting pipeline is provided with a first switch valve in series, and / or A second switch valve is arranged in series on the second connecting pipeline.
9. The chemical vapor deposition device according to any one of claims 1 to 8, characterized in that: The magnetic field generating device comprises a DC power supply module and a coil. Two ends of the coil are electrically connected to the DC power supply module respectively. The middle section of the coil is spirally wound around the axis of the process chamber.
10. The chemical vapor deposition equipment according to claim 9, characterized in that: The magnetic field generating device further comprises a protective shell, and the DC power supply module and the coil are both arranged in the protective shell.