Radio frequency plasma enhanced chemical vapor deposition equipment

Abstract

The utility model provides radio frequency plasma enhanced chemical vapor deposition equipment, and particularly relates to the technical field of medical wire surface treatment. The utility model provides radio frequency plasma enhanced chemical vapor deposition equipment aiming at the problems that reaction gas is not uniformly distributed in a reaction cavity, most temperature control systems are difficult to keep uniform temperature distribution in the whole reaction cavity, the utilization rate of the reaction gas of the equipment is low and the like. Comprising a reaction cavity used for containing and treating reaction gas and a radio frequency power supply arranged on the upper portion of the reaction cavity, the upper portions of the two opposite outer sides of the reaction cavity are connected with a gas inlet system and a gas exhaust system respectively, sliding systems are arranged at the front end, the middle end and the rear end of the reaction cavity, and medical wires penetrate through the reaction cavity and the sliding systems. The equipment is simple in structure and convenient to operate, and the film forming quality and efficiency of the medical wires can be guaranteed.

Description

Technical Field

[0001] The utility model relates to the technical field of surface treatment of medical filaments, and particularly relates to a radio frequency plasma enhanced chemical vapor deposition device. Background Art

[0002] Radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technology is an advanced technology widely used in the preparation of thin film materials. Under the action of a radio frequency electric field, this technology excites gas to generate plasma, enabling chemical reactions to occur at a lower temperature, thereby depositing a uniform thin film on the surface of a substrate.

[0003] Medical filaments come into contact with human tissues and body fluids. Therefore, the surface material must have good biocompatibility to avoid causing tissue damage, inflammation, or other adverse reactions. Radio frequency plasma enhanced chemical vapor deposition technology improves the biocompatibility of medical filaments through plasma treatment, thereby improving their performance and safety, and enhancing their application effect in the medical process, which is of great significance for ensuring the safety of patients and the quality of medical care.

[0004] In the process of depositing a thin film on medical filaments using traditional CVD (chemical vapor deposition) technology, due to the uneven distribution of reaction gases in the reaction chamber, the deposition rate varies at different positions, and the problem of uneven thin film thickness often occurs. Moreover, most temperature control systems are difficult to maintain a uniform temperature distribution throughout the reaction chamber, resulting in significant differences in the physical and chemical properties of the thin film at different positions, affecting the consistency and stability of the thin film. In addition, due to the low utilization rate of reaction gases in the equipment, some gases are discharged without being fully reacted, causing waste of resources and environmental pollution. Summary of the Invention

[0005] Aiming at the above problems of uneven distribution of reaction gases in the reaction chamber, most temperature control systems being difficult to maintain a uniform temperature distribution throughout the reaction chamber, and low utilization rate of reaction gases in the equipment, the utility model aims to provide a radio frequency plasma enhanced chemical vapor deposition device. This device can improve the gas distribution system and temperature control system to ensure the uniform distribution of reaction gases in the reaction chamber and stable temperature control, thereby achieving high-quality thin film deposition on the surface of medical filaments. The device has a simplified design in structure, reducing the maintenance cost and improving the reliability and operation convenience of the device.

[0006] The main idea of the technical solution adopted by the present utility model: An air inlet system and an air extraction system are respectively arranged on the left and right sides of the reaction cavity to control the gas state inside the reaction cavity. A plasma radio frequency power supply is arranged on the upper part of the reaction cavity, and the reaction gas is excited by a radio frequency electric field to generate plasma, promoting the chemical reaction to proceed under low-temperature conditions, improving the deposition rate and quality of the thin film. And a temperature control module is arranged at the bottom of the reaction cavity, and through an accurate temperature control system, the uniform distribution of the temperature inside the cavity is ensured. At the same time, a sliding system is used to ensure the uniform deposition of the thin film at different positions by adjusting the position of the retractable baffle.

[0007] The technical object of the present utility model is achieved through the following technical solutions:

[0008] A radio frequency plasma enhanced chemical vapor deposition device, including a reaction cavity for accommodating and processing reaction gas and a radio frequency power supply arranged on its upper part. An air inlet system and an air extraction system are respectively connected to the upper parts of the two opposite outer sides of the reaction cavity. A sliding system is arranged at the front end, middle end and rear end of the reaction cavity, and a medical wire passes through the reaction cavity and the sliding system.

[0009] To implement the above technical solution, a further preferred solution is: The sliding system includes a front sliding system, a middle sliding system and a rear sliding system. The front sliding system and the rear sliding system are respectively located at the feeding end and the discharging end of the reaction cavity, enabling the medical wire to move longitudinally in the reaction cavity.

[0010] Further, the middle sliding system is arranged at the bottom of the reaction cavity and includes a retractable baffle, a bracket, a slider and a slide rail. The slide rail is arranged along the length direction of the reaction cavity, and the slider can slide on the slide rail.

[0011] Through the above technical solution, further, a bracket is arranged on the slider, one end of the retractable baffle is rotatably connected to the bracket, and the other end is rotatably connected to the inner wall of the reaction cavity.

[0012] Still further, a plurality of temperature control modules are connected to the lower part of the middle sliding system. The temperature control module includes a plurality of heating elements and temperature sensors.

[0013] Still further, a sealing interface is arranged inside one side of the reaction cavity where the medical wire enters. The sealing interface includes a sealing base and a sealing head. The sealing base is fixed on the inner side of the reaction cavity 1, and a sealing head is detachably connected thereto. The sealing head is conical, and a small hole is left at the top for the medical wire to pass through.

[0014] Through the above technical solution, further, both ends of the air inlet system are respectively connected to a gas cylinder and the reaction cavity. It includes an air inlet pipeline and an air inlet. The multiple air inlet pipelines are arranged in parallel along the length direction of the reaction cavity.

[0015] By adopting the above technical solution, the utility model has the following technical effects.

[0016] By setting a sliding system with a retractable baffle, the density distribution of the plasma in the cavity can be affected, making the distribution of the gas flow and plasma more uniform, avoiding the non-uniformity of the film thickness and surface defects.

[0017] By setting multiple intake pipelines, the uniform distribution of gas in the reaction cavity can be ensured. Each pipeline can introduce reaction gas at different positions, thus forming a uniform gas environment throughout the cavity, avoiding the uneven gas distribution caused by a single intake point, and can also achieve multi-point supply, making the gas concentration in the cavity uniform, ensuring the full reaction of the gas, especially having a remarkable effect when processing large areas or long filament materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for use in the embodiments will be briefly introduced below.

[0019] Figure 1 It is a schematic structural diagram of the radio frequency plasma enhanced chemical vapor deposition equipment in the present utility model;

[0020] Figure 2 It is a schematic sectional view of the radio frequency plasma enhanced chemical vapor deposition equipment in the present utility model;

[0021] Figure 3 It is a schematic structural diagram of the sliding system of the present utility model;

[0022] Figure 4 It is a detailed view of the middle sliding system of the present utility model;

[0023] Figure 5 It is a detailed view of the sealing interface of the present utility model;

[0024] Among them, the reference numerals in the drawings are as follows:

[0025] 1 - reaction cavity; 2 - plasma radio frequency power supply; 21 - fixed base; 3 - intake system; 31 - intake pipeline; 32 - intake port; 4 - pumping system; 5 - sliding system; 51 - front sliding system; 52 - middle sliding system; 521 - retractable baffle; 522 - bracket; 523 - slider; 524 - slide rail; 53 - rear sliding system; 6 - temperature control module; 7 - medical filament; 8 - sealing interface; 81 - sealing base; 82 - sealing head. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0026] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments. Obviously, the described embodiments are only a part of the embodiments, rather than all the embodiments.

[0027] Referring to Figures 1-5 , the present application discloses a radio frequency plasma enhanced chemical vapor deposition device, which includes a reaction chamber 1 for accommodating and processing reaction gases and a radio frequency power supply 2 provided on its upper part. It is characterized in that: an intake system 3 and an exhaust system 4 are respectively connected to the upper parts of two opposite outer sides of the reaction chamber 1, a sliding system 5 is provided at the front end, middle end and rear end of the reaction chamber 1, and a medical wire 7 passes through the reaction chamber 1 and through the sliding system 5.

[0028] Specifically, the reaction chamber 1 is a cuboid cavity or can also be a cylinder. The inner surface of the cavity is polished to ensure smoothness and flatness, so as to reduce the resistance of gas flow and avoid the adhesion and accumulation of gas on the surface. The reaction chamber 1 is made of high-temperature and corrosion-resistant metal materials, such as stainless steel 316L, 310L, aluminum alloy, titanium alloy, etc.

[0029] It should be noted that the inner diameter of the reaction chamber 1 can be set to 300 mm to 500 mm, and the specific size can be determined according to actual process requirements and the size of the wire. A larger internal space can provide a larger deposition area to accommodate medical wires 7 of different sizes; the height of the cavity is 600 mm to 1000 mm, and the specific size is determined according to actual deposition process requirements and the layout of the internal equipment in the cavity. The wall thickness of the cavity can be set to 10 mm to 20 mm to ensure the pressure resistance and corrosion resistance of the reaction chamber 1, and to ensure the stability and long life of the cavity in a high-temperature and plasma environment.

[0030] As Figure 1 shown, sealing covers are provided on two opposite side surfaces of the reaction chamber 1, and a sealing device is used to ensure that the gas in the cavity does not leak during the reaction process, and to maintain a vacuum or low-pressure environment in the cavity. The upper end of the outer side of the sealing cover is connected with an intake system 3 and an exhaust system 4. The intake system 3 includes an intake pipeline 31 and an intake port 32. A plurality of intake pipelines 31 are arranged in parallel along the length direction of the reaction chamber 1. One end of the intake pipeline 31 is connected to a gas cylinder, and the other end is connected to the intake port 32. The number of intake pipelines 31 and intake ports 32 affects the gas uniformity in the reaction chamber and can be expanded according to actual usage; one end of the exhaust system 4 is connected to the reaction chamber 1, and the other end is connected to a molecular pump group.

[0031] Specifically, the upper part of the reaction chamber 1 bolts the plasma radio frequency power supply 2 to the upper part of the reaction chamber 1 through an L-shaped fixed base 21. The plasma radio frequency power supply 2 is connected to an external control system through a cable, and the power and frequency of the radio frequency power supply can be adjusted according to specific process requirements. For example, the common radio frequency power supply frequency is 13.56 MHz, and the power is adjustable between 100 W and 1000 W. Through the control system, the operator can precisely adjust the output parameters of the radio frequency power supply to optimize the film deposition process.

[0032] When preparing a large-area bio-composite film, the medical wire material 7 to be processed is evenly arranged in the working area inside the reaction chamber 1. Under the action of the plasma radio frequency power supply 2, the reaction gas is evenly ionized, and a large-area uniform electric field distribution can be obtained, forming a high-density plasma to achieve uniform deposition of a large-area film.

[0033] Specifically, a sealing interface 8 is provided inside one side of the reaction chamber 1 where the medical wire material 7 enters. The sealing interface 8 includes a sealing base 81 and a sealing head 82. The sealing base 81 is fixed inside the reaction chamber 1, and the sealing head 82 is conical with a small hole at the top for the medical wire material 7 to pass through.

[0034] It should be noted that the sealing base 81 is made of stainless steel material of the same material as the reaction chamber 1, and the sealing head 82 is made of titanium alloy material to improve its wear resistance and hardness. The diameter of the sealing base 81 is 20 mm, and the height is 30 mm, which is fixedly connected to the inside of the reaction chamber 1 to ensure tightness. The diameter of the sealing head 82 is 5 mm, the length is 15 mm, and the diameter of the small hole at the top is 0.5 mm. The conical design facilitates the guiding and penetration of the medical wire material 7. The sealing head 82 and the sealing base 81 are connected by a threaded connection to ensure the tightness and reliability of the connection. The thread is an M6 standard thread, and an O-ring is used in combination to prevent gas leakage.

[0035] As Figure 3 shown, the sliding system 5 includes a front sliding system 51, a middle sliding system 52, and a rear sliding system 53. The front sliding system 51 and the rear sliding system 53 are respectively located at the feeding end and the discharging end of the reaction chamber 1, enabling the medical wire material 7 to move longitudinally inside the reaction chamber.

[0036] Specifically, the front sliding system 51 and the rear sliding system 53 are used to support and guide the medical wire material to ensure the smooth movement of the wire material inside the reaction chamber and avoid damage in a high-temperature and plasma environment. It includes rollers, and the rollers are installed on the shaft through rolling bearings, and both ends of the shaft are fixed on the reaction chamber housing to ensure the free rotation of the rollers.

[0037] It is worth noting that before starting the device, ensure that the rollers and support shafts on the front sliding system 51 and the rear sliding system 53 are firmly installed and the rollers can rotate freely. The medical wire 7 is introduced from one end of the roller and guided into the reaction chamber 1 by the roller. During the reaction process, the roller supports and guides the wire to ensure that the wire moves smoothly in the reaction chamber to prevent the wire from bending or damage in the high temperature and plasma environment. The roller is supported by the bearing to achieve low-friction and smooth rotation, reducing the friction loss between the medical wire 7 and the roller. After the reaction is completed, the medical wire 7 is led out from the other end of the reaction chamber 1 through the roller to complete the entire deposition process.

[0038] It is worth noting that the roller can be made of high-strength corrosion-resistant materials to adapt to high temperature and chemical vapor deposition environments, extending the service life of the equipment. The modular design of the roller and support shaft is easy to disassemble and maintain, which can reduce the maintenance cost of the equipment.

[0039] like Figure 4 As shown, the middle sliding system 52 is arranged in parallel along the length direction of the chamber. The middle sliding system 52 includes a retractable baffle 521, a bracket 522, a slider 523, and a slide rail 524. The length of the slide rail 524 is about 90% of the length of the reaction chamber, the width is 50 mm, and the height is 20 mm. The slide rail 524 is fixed to the bottom of the reaction chamber by bolts, and the bolt spacing is 100 mm to ensure that the slide rail is firmly installed.

[0040] Specifically, the slider 523 is mounted on the slide rail 524 and slides along the slide rail 524. Its specific dimensions are 100 mm in length, 50 mm in width, and 30 mm in height. A ball bearing or a sliding bearing is provided inside the slider 523, which is closely matched with the slide rail 524 to ensure a smooth and unobstructed sliding process. The bracket 522 is mounted on the slider 523 and can move along the slide rail 524. A retractable baffle 521 is vertically fixed at its end. The other end of the retractable baffle 521 is connected to the inner wall of the reaction chamber 1. The retractable range of the retractable baffle 521 can be adjusted by moving the slider 523 on the slide rail 524.

[0041] Specifically, the retractable baffle 521 is composed of a plurality of interconnected segments, each of which can rotate independently to achieve the retractable function of the baffle. The baffle 521 may be made of a light but high-strength material, such as aluminum alloy or high-strength plastic, to ensure its stability and durability during the retractable process. The surface of the baffle 521 may be specially treated, such as coating or polishing, to reduce friction and improve the sliding performance of the baffle.

[0042] Specifically, the baffle 521 is initially in a fully retracted state and is fixedly connected to one end of the bracket 522. By operating the slider 523 to move on the slide rail 524, the position of the bracket 522 is moved. Since the bracket 522 is connected to the rotation axis of the baffle 521, the movement of the slider 523 will cause the rotation axis to rotate, and thus each segment of the baffle 521 will be sequentially deployed or retracted.

[0043] It is worth noting that by adjusting its telescopic range, the telescopic baffle 521 can change the gas flow path and distribution in the reaction chamber. When the telescopic baffle 521 extends, it will partially block the gas flow, causing the gas flow to redistribute. This redistribution can ensure that the gas flow density increases in some areas and decreases in other areas, thus achieving a uniform gas flow distribution; the adjustment of the telescopic range of the telescopic baffle 521 will also affect the plasma distribution in the reaction chamber. By adjusting its position, the local change of the plasma density can be controlled, thereby affecting the deposition rate and film quality; the change in the position of the telescopic baffle 521 will also guide the plasma flow to a specific area, optimizing the plasma distribution in the chamber, so that the wire is uniformly exposed to the plasma on the entire surface, ensuring uniform film deposition.

[0044] As Figure 1 shown, a temperature control module 6 is installed at the bottom of the sliding system 52. Multiple heating temperature control modules 6 are distributed on the inner wall of the reaction chamber 1. The temperature control module can heat and has a thermocouple for temperature measurement, and can control the temperature rise, heat preservation, and temperature drop by editing the temperature control program. The number of temperature control modules can be determined according to the actual length of the reaction chamber.

[0045] The specific usage process of a radio frequency plasma enhanced chemical vapor deposition device provided by the present utility model is as follows: Clean the reaction chamber 1 to ensure there are no impurities inside. Install the sealing base 81 inside the reaction chamber 1 and fasten it with a special tool. Align the sealing head 82 with the sealing base 81 and tighten it to ensure airtightness. After using a lead tool to assist in guiding the medical wire 7 through the front sliding system 51, guide it through the small hole at the top of the sealing head 82 and the middle sliding system 52 and the rear sliding system 53. Then check the airtightness and integrity of the entire system to ensure there is no gas leakage. After that, turn on the pumping system 4 to evacuate the reaction chamber 1 to a vacuum, and then fill it with an inert gas to remove the miscellaneous gas. The "evacuate to vacuum - inject inert gas" cycle can be repeated multiple times until the reaction chamber 1 reaches the required process gas purity requirement. Edit the temperature curve through the temperature control module 6 to make the temperature inside the reaction chamber 1 reach the set temperature, and ensure that the temperature difference is less than ±0.5 °C to achieve the required temperature uniformity for the process. Then, through the gas inlet system 3, inject the reaction gas into the reaction chamber 1 to reach the required process pressure. Turn on the plasma radio frequency power supply 2. The introduced reaction gas undergoes inelastic collisions with high-energy electrons under the high-voltage electric field and is decomposed, dissociated, and ionized into ions, active atoms, and active groups to form a plasma. These high-energy particles are prone to chemical reactions, and the thin film on the surface of the medical wire 7 begins to grow. During the growth of the thin film, the gas flow rate and type can be controlled through the control panel, so as to obtain one or more layers of thin films on the surface of the medical wire 7. By controlling the sliding system 5 inside the reaction chamber, a uniformly reacted medical wire thin film deposition at different positions can be obtained. When the thin film meets the requirements, turn off the plasma radio frequency power supply 2, turn off the gas inlet system 3, stop injecting the reaction gas, turn on the pumping system 4 to evacuate to a vacuum, and then turn on the gas inlet system 3 to inject an inert gas. Set the temperature control module program to lower the temperature inside the reaction chamber to room temperature, release the seal of the reaction chamber, and take out the medical wire 7.

[0046] It should be clear that the above detailed description of the embodiments of the present utility model provided in the drawings is not intended to limit the scope of the claimed present utility model, but merely represents the selected embodiments of the present utility model. Based on the embodiments in the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present utility model.

Claims

1. A radio frequency plasma enhanced chemical vapor deposition device, comprising a reaction chamber (1) for accommodating and processing reaction gas and a radio frequency power supply (2) arranged on the upper part thereof, characterized in that: The upper parts of two opposite outer sides of the reaction chamber (1) are respectively connected to an air intake system (3) and an air exhaust system (4); the front end, middle end and rear end of the reaction chamber (1) are provided with a sliding system (5); and the medical wire material (7) penetrates the reaction chamber (1) and extends to the sliding system (5).

2. The radio frequency plasma enhanced chemical vapor deposition device according to claim 1, characterized in that: The sliding system (5) comprises a front sliding system (51), a middle sliding system (52), and a rear sliding system (53); the front sliding system (51) and the rear sliding system (53) are respectively located at the inlet end and the outlet end of the reaction chamber (1), so that the medical wire material (7) moves in the longitudinal direction within the reaction chamber.

3. The radio frequency plasma enhanced chemical vapor deposition device according to claim 2, characterized in that: The middle sliding system (52) is arranged at the bottom of the reaction chamber (1), and comprises a retractable baffle (521), a bracket (522), a sliding block (523), and a sliding rail (524). The sliding rail (524) is arranged along the length direction of the reaction chamber (1), and the sliding block (523) slides on the sliding rail (524).

4. The radio frequency plasma enhanced chemical vapor deposition device according to claim 3, characterized in that: The slider (523) is provided with a bracket (522); one end of the retractable baffle (521) is rotatably connected to the bracket (522), and the other end is rotatably connected to the inner wall of the reaction chamber (1).

5. The radio frequency plasma enhanced chemical vapor deposition device according to claim 4, characterized in that: A plurality of temperature control modules (6) are connected to the lower portion of the middle sliding system (52), and the temperature control modules (6) include a plurality of heating elements and temperature sensors.

6. The radio frequency plasma enhanced chemical vapor deposition device according to claim 1, characterized in that: A sealing interface (8) is provided inside the side where the medical wire (7) enters the reaction chamber (1), and the sealing interface (8) comprises a sealing base (81) and a sealing head (82). The sealing base (81) is fixed to the inside of the reaction chamber (1), and the sealing head (82) is detachably connected thereto.

7. The radio frequency plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The two ends of the air intake system (3) are respectively connected to the gas cylinder and the reaction chamber (1), and comprise an air intake pipeline (31) and an air intake port (32). The plurality of air intake pipelines (31) are arranged in parallel along the length direction of the reaction chamber (1).

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