Anti-reverse and anti-burning circuit and USB-C connector

Abstract

The utility model relates to an anti-reverse and anti-burning circuit and a USB-C connector. The anti-reverse and anti-burning circuit comprises a first PMOS tube, a second PMOS tube, a first NMOS tube, a micro-control unit and a temperature sensor. The temperature sensor is arranged at a VBUS port, the drain electrode of the first NMOS tube is connected with the drain electrode of the first PMOS tube, and the first NMOS tube and the first PMOS tube are jointly connected with the first VBUS port; the source electrode of the first NMOS tube is connected with the grid electrode of the first PMOS tube and the grid electrode of the second PMOS tube; the source electrode of the first PMOS tube is connected with the source electrode of the second PMOS tube; and the drain electrode of the second PMOS tube is connected with the second VBUS port. In the anti-reverse and anti-burning circuit, when the temperature of a VBUS port is greater than a threshold temperature, a micro-control unit outputs a high level to a grid electrode of a first NMOS tube.

Description

Technical Field

[0001] The present application relates to the technical field of electronic circuits, and particularly relates to an anti-reverse and anti-burning circuit and a USB-C connector. Background Art

[0002] In the Universal Serial Bus (USB), since the USB-C connector can be inserted on both sides and has a relatively high transmission rate, it is applied more and more widely. The Voltage Bus (VBUS) in the USB interface carries a power supply signal and provides the required power for the connected device. In some related technologies, only anti-reverse protection for VBUS can be achieved, and anti-burning protection cannot be performed. Therefore, how to perform both anti-reverse and anti-burning protection on VBUS has become an urgent problem to be solved. Summary of the Utility Model

[0003] The present application provides an anti-reverse and anti-burning circuit and a USB-C connector to solve the technical problem of how to perform both anti-reverse and anti-burning protection on VBUS.

[0004] In a first aspect, the present application provides an anti-reverse and anti-burning circuit, which includes: a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a micro-control unit, and a temperature sensor;

[0005] The temperature sensor is disposed at the VBUS port for collecting the temperature of the VBUS port;

[0006] The signal input end of the micro-control unit is connected to the temperature sensor, and the signal output end of the micro-control unit is connected to the gate of the first NMOS transistor;

[0007] The drain of the first NMOS transistor is connected to the drain of the first PMOS transistor, and the drain of the first NMOS transistor and the drain of the first PMOS transistor are commonly connected to a first VBUS port;

[0008] The source of the first NMOS transistor is connected to the gate of the first PMOS transistor and the gate of the second PMOS transistor;

[0009] The source of the first PMOS transistor is connected to the source of the second PMOS transistor; the drain of the second PMOS transistor is connected to a second VBUS port;

[0010] The micro-control unit is configured to output a high level to the gate of the first NMOS transistor when the temperature of the VBUS port is greater than a threshold temperature; the first NMOS transistor is turned on under the action of the high level, the second PMOS transistor is turned off, and the first PMOS transistor is turned on.

[0011] Optionally, the reverse and overheat protection circuit further includes a first voltage regulator diode and a first capacitor;

[0012] The cathode of the first voltage regulator diode is connected to the source of the first PMOS transistor, and the anode of the first voltage regulator diode is connected to the gate of the first PMOS transistor;

[0013] The first end of the first capacitor is connected to the source of the first PMOS transistor, and the second end of the first capacitor is connected to the gate of the first PMOS transistor.

[0014] Optionally, the reverse and overheat protection circuit further includes a first resistor;

[0015] The source of the first NMOS transistor, the gate of the first PMOS transistor, and the gate of the second PMOS transistor are commonly connected to the first end of the first resistor, and the second end of the first resistor is grounded.

[0016] Optionally, the reverse and overheat protection circuit further includes a second resistor;

[0017] The signal output end of the microcontroller unit and the gate of the first NMOS transistor are commonly connected to the first end of the second resistor, and the second end of the second resistor is grounded.

[0018] Optionally, the reverse and overheat protection circuit further includes a voltage dividing resistor;

[0019] The first end of the voltage dividing resistor is connected to the power supply, the second end of the voltage dividing resistor is connected to the first end of the temperature sensor, and the second end of the temperature sensor is disposed at the VBUS port;

[0020] The second end of the voltage dividing resistor and the first end of the temperature sensor are commonly connected to the signal input end of the microcontroller unit.

[0021] Optionally, the voltage dividing resistor includes a third resistor and a fourth resistor; the temperature sensor includes a first thermistor and a second thermistor;

[0022] The first ends of the third resistor and the fourth resistor are commonly connected to the power supply, the second end of the third resistor is connected to the first end of the first thermistor, the second end of the third resistor and the first end of the first thermistor are commonly connected to the first input end of the microcontroller unit, and the second end of the first thermistor is disposed at the first VBUS port;

[0023] The second end of the fourth resistor is connected to the first end of the second thermistor, the second end of the fourth resistor and the first end of the second thermistor are commonly connected to the second input end of the microcontroller unit, and the second end of the second thermistor is disposed at the second VBUS port.

[0024] Second aspect, the present application provides a USB-C connector, and the USB-C connector includes the reverse connection and overheat protection circuit according to any one of the first aspect.

[0025] The above technical solutions provided by the embodiments of the present application have the following advantages compared with the prior art: The reverse connection and overheat protection circuit provided by the embodiments of the present application includes: a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a micro control unit, and a temperature sensor; the temperature sensor is disposed at the VBUS port for collecting the temperature of the VBUS port; a signal input end of the micro control unit is connected to the temperature sensor, and a signal output end of the micro control unit is connected to a gate of the first NMOS transistor; a drain of the first NMOS transistor is connected to a drain of the first PMOS transistor, and the drain of the first NMOS transistor and the drain of the first PMOS transistor are commonly connected to a first VBUS port; a source of the first NMOS transistor is connected to a gate of the first PMOS transistor and a gate of the second PMOS transistor; a source of the first PMOS transistor is connected to a source of the second PMOS transistor; a drain of the second PMOS transistor is connected to a second VBUS port. In this reverse connection and overheat protection circuit, when the temperature of the VBUS port is greater than a threshold temperature, the micro control unit outputs a high level to the gate of the first NMOS transistor; the first NMOS transistor is turned on under the action of the high level, and can simultaneously pull up the voltages of the gates of the first PMOS transistor and the second PMOS transistor. At this time, the first PMOS transistor is turned on through an internal parasitic diode to achieve the reverse connection prevention function, and the second PMOS transistor is completely turned off to achieve the overheat protection function, so as to achieve the effect of simultaneously protecting the VBUS against reverse connection and overheat. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application.

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0028] One or more embodiments are exemplarily illustrated by the pictures in the corresponding accompanying drawings. These exemplary illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements, unless otherwise stated, and the drawings in the figures do not constitute a proportional limitation.

[0029] Figure 1 FIG. 18 is a schematic structural diagram of a reverse connection and overheat protection circuit provided by an embodiment of the present application;

[0030] Figure 2A schematic structural diagram of an anti-reverse and anti-burning circuit provided by another embodiment of the present application. Detailed implementation manners

[0031] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some but not all of the embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0032] The following disclosure provides many different embodiments or examples for implementing different structures of the present application. To simplify the disclosure of the present application, components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present application. In addition, the present application may repeat reference numerals and / or letters in different examples. This repetition is for the purpose of simplification and clarity and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0033] To solve the technical problem of how to simultaneously provide anti-reverse and anti-burning protection for VBUS in the prior art, the present application provides an anti-reverse and anti-burning circuit and a USB-C connector, which can achieve the effect of simultaneously providing anti-reverse and anti-burning protection for VBUS.

[0034] The first embodiment of the present application provides an anti-reverse and anti-burning circuit, as Figure 1 shown. The anti-reverse and anti-burning circuit includes: a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a microcontroller unit MCU, and a temperature sensor.

[0035] The temperature sensor is disposed at the VBUS port for collecting the temperature of the VBUS port. The VBUS port includes a first VBUS port (VBUS_1) and a second VBUS port (VBUS_2). The first VBUS port is the end connected to the power supply signal, and the second VBUS port is the end for connecting a load device.

[0036] The connection relationships of the components are as follows:

[0037] The signal input end of the microcontroller unit is connected to the temperature sensor, and the signal output end of the microcontroller unit is connected to the gate of the first NMOS transistor;

[0038] The drain of the first NMOS transistor is connected to the drain of the first PMOS transistor, and the drain of the first NMOS transistor and the drain of the first PMOS transistor are commonly connected to the first VBUS port;

[0039] The source of the first NMOS transistor is connected to the gates of the first PMOS transistor and the second PMOS transistor;

[0040] The source of the first PMOS transistor is connected to the source of the second PMOS transistor; the drain of the second PMOS transistor is connected to the second VBUS port;

[0041] The microcontroller is configured to output a high level to the gate of the first NMOS transistor when the temperature of the VBUS port is greater than the threshold temperature; the first NMOS transistor is turned on under the action of the high level, the second PMOS transistor is turned off, and the first PMOS transistor is turned on.

[0042] In this anti-reverse and anti-burning circuit, when the temperature of the VBUS port is greater than the threshold temperature, the microcontroller outputs a high level to the gate of the first NMOS transistor; the first NMOS transistor is turned on under the action of the high level, and the voltages of the gates of the first PMOS transistor and the second PMOS transistor can be pulled up simultaneously. At this time, the first PMOS transistor conducts through the internal parasitic diode to achieve the anti-reverse function, and the second PMOS transistor is completely turned off to achieve the anti-burning function, achieving the effect of simultaneously protecting the VBUS against reverse connection and burning.

[0043] In one embodiment, as Figure 2 the anti-reverse and anti-burning circuit further includes a first zener diode D1 and a first capacitor C1.

[0044] The cathode of the first zener diode D1 is connected to the source S of the first PMOS transistor Q1, and the anode of the first zener diode D1 is connected to the gate G of the first PMOS transistor Q1; the first end of the first capacitor C1 is connected to the source S of the first PMOS transistor Q1, and the second end of the first capacitor C1 is connected to the gate G of the first PMOS transistor Q1.

[0045] In this embodiment, the first zener diode D1 is connected in parallel across the two ends of the first capacitor C1, which plays a role in voltage stabilization and filtering, and can prevent breakdown between the gate G and the source S of the first PMOS transistor Q1. When power is applied instantaneously, the first capacitor C1 is equivalent to a short circuit.

[0046] In one embodiment, as Figure 2 the anti-reverse and anti-burning circuit further includes a first resistor R1 and a second resistor R2.

[0047] The source of the first NMOS transistor Q3, the gate of the first PMOS transistor Q1, and the gate of the second PMOS transistor Q2 are commonly connected to the first end of the first resistor R1, and the second end of the first resistor R1 is grounded. The signal output terminal GPIO2 of the microcontroller and the gate of the first NMOS transistor Q3 are commonly connected to the first end of the second resistor R2, and the second end of the second resistor R2 is grounded. The first resistor R1 and the second resistor R2 achieve the function of pulling down to ground.

[0048] In one embodiment, the reverse and overheat protection circuit further includes a voltage dividing resistor. The first end of the voltage dividing resistor is connected to the power supply, the second end of the voltage dividing resistor is connected to the first end of the temperature sensor, and the second end of the temperature sensor is disposed at the VBUS port; the second end of the voltage dividing resistor and the first end of the temperature sensor are commonly connected to the signal input end of the micro control unit.

[0049] Specifically, as Figure 2 , the voltage dividing resistor may include a third resistor R3 and a fourth resistor R4, and the temperature sensor includes a first thermistor NTC1 and a second thermistor NTC2. NTC1 and NTC2 may be negative temperature coefficient thermistors.

[0050] The first ends of the third resistor R3 and the fourth resistor R4 are commonly connected to the power supply (1V8), the second end of the third resistor R3 is connected to the first end of the first thermistor NTC1, the second end of the third resistor R3 and the first end of the first thermistor NTC1 are commonly connected to the first input end (GPIO1) of the micro control unit, and the second end of the first thermistor NTC1 is disposed at the first VBUS port; the second end of the fourth resistor R4 is connected to the first end of the second thermistor NTC2, the second end of the fourth resistor R4 and the first end of the second thermistor NTC2 are commonly connected to the second input end (GPIO3) of the micro control unit, and the second end of the second thermistor NTC2 is disposed at the second VBUS port.

[0051] In this embodiment, R3 and NTC1 form a voltage divider, R4 and NTC2 form a voltage divider. The temperatures of the VBUS ports are respectively collected by NTC1 and NTC2 and input to MCU GPIO1 and MCU GPIO3. MCU GPIO2 is used to send an overheat protection signal; R1 and R2 are pull-down resistors; Q1 is used to implement the reverse protection function, and Q2 is used to implement the overheat protection function. A zener diode D1 is connected in parallel across both ends of the capacitor C1 to prevent breakdown between GS; when power is applied instantaneously, the capacitor C1 is equivalent to a short circuit.

[0052] The overheat protection principle is as follows:

[0053] Normal working process: When the temperature of the VBUS port is within the threshold temperature T0, MCU GPIO2 sends a low level of OTP, and Q3 is cut off; at this time, Gate_ctl is at a low level GND, and both Q1 and Q2 are turned on.

[0054] Overheat protection working process: After the temperature of the VBUS port rises and reaches the threshold temperature T0, MCU GPIO2 sends a high level of OTP, and Q3 is turned on; at this time, Gate_ctl is at a high level VBUS_1, Q1 is turned on through the parasitic diode, and Q2 is completely cut off to achieve overheat protection.

[0055] The reverse protection principle is as follows:

[0056] Normal working process: First, VBUS_1 is conducted to VBUS_2 by the body diode of Q1, and then VBUS_1 is conducted to VBUS_2 by the conducting channel of Q1.

[0057] Reverse connection prevention working process: The body diode of Q1 is cut off, and the conducting channel of Q1 is disconnected, thereby isolating VBUS_1 and VBUS_2.

[0058] In this embodiment, reverse connection prevention and overheating protection can be simultaneously performed on VBUS.

[0059] Based on the same inventive concept, the second embodiment of the present application provides a USB-C connector, and the USB-C connector includes the reverse connection prevention and overheating protection circuit in any of the above embodiments.

[0060] In this embodiment, for the USB-C connector applying the reverse connection prevention and overheating protection circuit, when overheating occurs, Q3 can simultaneously raise the voltages of the gates of Q1 and Q2. At this time, it can be ensured that Q1 conducts through the parasitic diode, maintaining the normal operation of the reverse connection prevention function. On the basis of the existing reverse connection prevention circuit, this embodiment adds the overheating protection function with as few components as possible, and the overheating protection function does not affect the reverse connection prevention function during use. Thus, reverse connection prevention and overheating protection can be simultaneously performed on the USB-C connector.

[0061] It should be understood that the terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. Unless otherwise clearly specified in the context, the singular forms "a", "an", and "the" as used herein may also include the plural forms. The terms "include", "comprise", "contain", and "have" are inclusive and thus specify the presence of the stated features, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring them to be performed in the particular order described or illustrated, unless the execution order is explicitly stated. It should also be understood that additional or alternative steps may be used.

[0062] It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application. In the description, suffixes such as "module", "component", or "unit" used to represent elements are only for the convenience of explaining the present application and have no specific meaning in themselves. Therefore, "module", "component", or "unit" can be used interchangeably.

[0063] The above are only specific embodiments of the present application, enabling those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be obvious to those skilled in the art. The general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to these embodiments shown herein, but rather will be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. An anti-reverse and anti-burn circuit, characterized in that: The anti-reverse and anti-burn circuit comprises: a first PMOS tube, a second PMOS tube, a first NMOS tube, a micro control unit and a temperature sensor; The temperature sensor is arranged at the VBUS port, and is used to collect the temperature of the VBUS port; The signal input end of the micro control unit is connected to the temperature sensor, and the signal output end of the micro control unit is connected to the gate of the first NMOS tube; The drain of the first NMOS tube is connected to the drain of the first PMOS tube, and the drain of the first NMOS tube and the drain of the first PMOS tube are commonly connected to the first VBUS port; The source of the first NMOS tube is connected to the gate of the first PMOS tube and the gate of the second PMOS tube; The source of the first PMOS tube is connected to the source of the second PMOS tube; the drain of the second PMOS tube is connected to the second VBUS port; The micro control unit is used to output a high level to the gate of the first NMOS tube when the temperature of the VBUS port is greater than a threshold temperature; the first NMOS tube is turned on under the action of the high level, the second PMOS tube is turned off, and the first PMOS tube is turned on.

2. The anti-reverse and anti-burn circuit according to claim 1, characterized in that: The anti-reverse and anti-burn circuit also includes a first voltage regulator tube and a first capacitor; The cathode of the first voltage regulator tube is connected to the source of the first PMOS tube, and the anode of the first voltage regulator tube is connected to the gate of the first PMOS tube; A first end of the first capacitor is connected to a source of the first PMOS transistor, and a second end of the first capacitor is connected to a gate of the first PMOS transistor.

3. The anti-reverse and anti-burn circuit according to claim 1, characterized in that: The anti-reverse and anti-burn circuit also includes a first resistor; The source of the first NMOS transistor, the gate of the first PMOS transistor and the gate of the second PMOS transistor are commonly connected to the first end of the first resistor, and the second end of the first resistor is grounded.

4. The anti-reverse and anti-burn circuit according to claim 1, characterized in that: The anti-reverse and anti-burn circuit also includes a second resistor; The signal output terminal of the micro control unit and the gate of the first NMOS tube are commonly connected to the first end of the second resistor, and the second end of the second resistor is grounded.

5. The anti-reverse and anti-burn circuit according to claim 1, characterized in that: The anti-reverse and anti-burn circuit also includes a voltage dividing resistor; The first end of the voltage-dividing resistor is connected to the power supply, the second end of the voltage-dividing resistor is connected to the first end of the temperature sensor, and the second end of the temperature sensor is arranged at the VBUS port; The second end of the voltage-dividing resistor and the first end of the temperature sensor are commonly connected to the signal input end of the micro control unit.

6. The anti-reverse and anti-burn circuit according to claim 5, characterized in that: The voltage-dividing resistor includes a third resistor and a fourth resistor; the temperature sensor includes a first thermistor and a second thermistor; The first end of the third resistor and the first end of the fourth resistor are commonly connected to the power supply, the second end of the third resistor is connected to the first end of the first thermistor, the second end of the third resistor and the first end of the first thermistor are commonly connected to the first input end of the micro control unit, and the second end of the first thermistor is arranged at the first VBUS port; The second end of the fourth resistor is connected to the first end of the second thermistor, the second end of the fourth resistor and the first end of the second thermistor are commonly connected to the second input end of the micro control unit, and the second end of the second thermistor is arranged at the second VBUS port.

7. A USB-C connector, characterized in that: The USB-C connector includes the anti-reverse and anti-burn circuit according to any one of claims 1-6.

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