Power integration module and vehicle

Abstract

The utility model discloses a power integration module and a vehicle, and relates to the technical field of electronic power devices, the power integration module comprises a substrate and a switch circuit; the switching circuit is integrated on the substrate; the switching circuit comprises at least one bridge arm circuit; each bridge arm circuit comprises an upper bridge arm switch module and a lower bridge arm switch module; the upper bridge arm switch module and the lower bridge arm switch module are connected in series between the first power supply end and the second power supply end, at least one of the upper bridge arm switch module and the lower bridge arm switch module comprises a first switch element and a second switch element, and the semiconductor types of the first switch element and the second switch element are inconsistent. Different switching elements are sealed in a single power integration module, the advantages of low switching loss and strong conduction capability of different switching elements are combined, the weaknesses of insufficient conduction capability, high cost and large switching loss of each device are avoided, and a low-cost and high-efficiency module scheme is realized on the premise of being compatible with a single structure.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic power devices, in particular to a power integrated module and a vehicle. Background Art

[0002] The types of power modules currently used in new energy vehicles mainly include third-generation semiconductor power devices such as SiC MOSFET and second-generation semiconductor power devices such as Si IGBT. These semiconductor power devices have their own advantages and disadvantages. The following takes SiC MOSFET and Si IGBT as examples to introduce the advantages and disadvantages of the above semiconductor power devices. Figure 1 and Figure 2 As shown in the figure, SiC has no forward turn-on voltage, low voltage drop at low current, and small conduction loss, but its conduction loss at high current is not as good as that of IGBT; SiC's switching loss is smaller than that of IGBT at all currents, so the power module using SiC and / or IGBT integration has the following characteristics:

[0003] like Figure 3 As shown in the figure, SiC power modules have the advantages of low switching loss and high efficiency, but they are relatively expensive. In order to meet the power requirements of the entire vehicle, the SiC content of modules using pure SiC solutions is relatively large, resulting in extremely high costs.

[0004] like Figure 4 As shown, the IGBT power module has the advantages of high current capability and low cost. However, due to the forward conduction voltage of the IGBT chip, the conduction loss is large at low current, and the switching efficiency is limited by its tail current.

[0005] like Figure 5 As shown, SiC and IGBT parallel power modules can achieve the goal of taking into account both small and medium current efficiency and peak current capability by controlling the switching sequence. However, this solution uses two modules, which has high packaging costs, large space occupancy, reduced power density, increased flow resistance of the water-cooled radiator, and poor heat dissipation effect. Utility Model Content

[0006] The main purpose of the utility model is to provide a power integrated module and a vehicle, aiming to enclose different switching elements in a single power integrated module, combining the advantages of low switching loss and strong conduction capability of different switching elements, avoiding the weaknesses of insufficient conduction capability, high cost and large switching loss of each device, and realizing a low-cost and high-efficiency module solution under the premise of being compatible with a single structure.

[0007] To achieve the above object, the utility model provides a power integrated module, comprising:

[0008] substrate;

[0009] A switching circuit, the switching circuit being integrated on the substrate;

[0010] The switching circuit includes at least one leg circuit;

[0011] Each leg circuit includes an upper leg switching module and a lower leg switching module;

[0012] The upper leg switching module and the lower leg switching module are connected in series between a first power terminal and a second power terminal. At least one of the upper leg switching module and the lower leg switching module includes a first switching element and a second switching element, and the semiconductor types of the first switching element and the second switching element are different.

[0013] In one embodiment, the device types of the first switching element and / or the second switching element include GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET;

[0014] The semiconductor materials of the first switching element and / or the second switching element include SiC, Si, GaN;

[0015] The semiconductor type of the first switching element and / or the second switching element is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET and any one of SiC, Si, GaN.

[0016] In one embodiment, the first switching element is a SiC MOSFET and the second switching element is a Si IGBT.

[0017] In one embodiment, the upper leg switching module and / or the lower leg switching module further includes a third switching element, the third switching element is connected in parallel with the first switching element and the second switching element of the corresponding leg switching module, and the semiconductor types of the first switching element, the second switching element and the third switching element are different from each other.

[0018] In one embodiment, the number of leg circuits is multiple, and the multiple leg circuits are arranged in parallel and arranged in sequence along a first direction on the substrate.

[0019] In one embodiment, the power integration module further includes a first encapsulation housing, the number of the first encapsulation housings is multiple, and at least one leg circuit is encapsulated in each first encapsulation housing.

[0020] In one embodiment, every three of the plurality of bridge arm circuits form a three-phase full-bridge circuit, and the plurality of three-phase full-bridge circuits are arranged in sequence along a first direction on the substrate.

[0021] In one embodiment, each of the three-phase full-bridge circuits includes a first-phase bridge arm circuit, a second-phase bridge arm circuit, and a third-phase bridge arm circuit. The first-phase bridge arm circuits of the plurality of three-phase full-bridge circuits are arranged side by side along the first direction, the second-phase bridge arm circuits of the plurality of three-phase full-bridge circuits are arranged side by side along the first direction, and the third-phase bridge arm circuits of the plurality of three-phase full-bridge circuits are arranged side by side along the first direction.

[0022] In one embodiment, the first-phase bridge arm circuits of the plurality of three-phase full-bridge circuits are arranged at intervals along the first direction, and the second-phase bridge arm circuit and the third-phase bridge arm circuit of each three-phase full-bridge circuit are arranged side by side and adjacent to each other along the first direction.

[0023] In one embodiment, the first-phase bridge arm circuit, the second-phase bridge arm circuit, and the third-phase bridge arm circuit of the same three-phase full-bridge circuit are arranged side by side along a second direction, and the second direction intersects with the first direction.

[0024] In one embodiment, the power integration module further includes a plurality of second packaging cases. The first-phase bridge arm circuits of each three-phase full-bridge circuit are packaged in one of the first packaging cases; the second-phase bridge arm circuit and the third-phase bridge arm circuit of each three-phase full-bridge are packaged in one of the second packaging cases;

[0025] Alternatively, after the second-phase bridge arm circuit and the third-phase bridge arm circuit of each three-phase full-bridge circuit are respectively packaged through one of the first packaging cases, they are further packaged through one of the second packaging cases.

[0026] In one embodiment, the substrate includes a first sub-substrate and a second sub-substrate. The first-phase bridge arm circuits of the plurality of three-phase full-bridge circuits are disposed on the first sub-substrate, and the second-phase bridge arm circuits and the third-phase bridge arm circuits of the plurality of three-phase full-bridge circuits are respectively disposed on the second sub-substrate.

[0027] In one embodiment, the upper-bridge arm switching modules of the plurality of bridge arm circuits are arranged side by side along the first direction, and the lower-bridge arm switching modules of the plurality of bridge arm circuits are arranged side by side along the first direction.

[0028] In one embodiment, the upper-bridge arm switching module and the lower-bridge arm switching module of the same bridge arm circuit are arranged at intervals along a second direction, and the second direction intersects with the first direction.

[0029] In one embodiment, the upper-bridge switching module of each of the arm circuits includes a first switching element and a second switching element, and the first switching element and the second switching element of the upper-bridge switching module are arranged side by side along the first direction;

[0030] And / or, the lower-bridge switching module of each of the arm circuits includes a first switching element and a second switching element, and the first switching element and the second switching element of the lower-bridge switching module are arranged side by side along the first direction.

[0031] In one embodiment, the upper-bridge switching module and the lower-bridge switching module of each of the arm circuits are arranged side by side and adjacent to each other along the first direction.

[0032] In one embodiment, the upper-bridge switching module of each of the arm circuits includes a first switching element and a second switching element, and the first switching element and the second switching element of the upper-bridge switching module are arranged side by side and adjacent to each other along the first direction;

[0033] And / or, the lower-bridge switching module of each of the arm circuits includes a first switching element and a second switching element, and the first switching element and the second switching element of the lower-bridge switching module are arranged side by side and adjacent to each other along the first direction.

[0034] In one embodiment, the substrate includes a board body and a conductive layer provided on one side of the board body, and the switching circuit is provided on the conductive layer.

[0035] In one embodiment, the output terminals of the first switching element, the second switching element, and the third switching element of the arm circuit are welded or sintered on the conductive layer;

[0036] The connection terminal of the first switching element is connected to the conductive layer through a copper sheet;

[0037] The input terminals of the first switching element, the input terminals and connection terminals of the second switching element, and the input terminal of the third switching element are all connected to the conductive layer through aluminum wires.

[0038] In one embodiment, a thermistor is provided on the conductive layer, the thermistor, the first switching element, and the second switching element are arranged at intervals along a third direction, and the thermistor is electrically connected to the drive circuit of the power integration module.

[0039] In one embodiment, a Pin pin is further provided on the conductive layer, and the Pin pin is electrically connected to the drive circuit;

[0040] The input terminal of the first switching element, the input terminals and connection terminals of the second switching element, and the input terminal of the third switching element are sequentially connected to the Pin pin through an aluminum wire and the conductive layer;

[0041] The thermistor is connected to the Pin through the conductive layer.

[0042] In one embodiment, the non-connected sections of the substrate, the copper sheet, the aluminum wire, and the Pin are encapsulated with an insulating member.

[0043] In one embodiment, the power integration module further includes a heat dissipation bottom plate. The conductive layer includes a first conductive layer and a second conductive layer. The switching circuit, the first conductive layer, the substrate, the second conductive layer, and the heat dissipation bottom plate are stacked in sequence along a fourth direction.

[0044] In addition, to achieve the above object, the present utility model further provides a vehicle, which includes the power integration module as described above.

[0045] The technical solution of the present utility model provides a power integration module and a vehicle. The power integration module includes a substrate and a switching circuit; the switching circuit is integrated on the substrate; the switching circuit includes at least one bridge arm circuit; each bridge arm circuit includes an upper bridge arm switching module and a lower bridge arm switching module; the upper bridge arm switching module and the lower bridge arm switching module are connected in series between a first power supply terminal and a second power supply terminal. At least one of the upper bridge arm switching module and the lower bridge arm switching module includes a first switching element and a second switching element, and the semiconductor types of the first switching element and the second switching element are different. By encapsulating different switching elements in a single power integration module, the present utility model combines the advantages of low switching loss and strong conduction ability of different switching elements, avoids the weaknesses of insufficient conduction ability, high cost, and large switching loss of each device, and realizes a module solution with low cost and high efficiency on the premise of being compatible with a single structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with the present utility model and used together with the specification to explain the principles of the present utility model.

[0047] To more clearly illustrate the technical solutions in the embodiments of the present utility model or in the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0048] Figure 1 It is a comparison diagram of the conduction current and conduction voltage drop of the SiC module and the IGBT module in the prior art;

[0049] Figure 2 It is a comparison diagram of the switching loss and current of the SiC module and the IGBT module in the prior art;

[0050] Figure 3 It is the circuit diagram of the SiC power module in the prior art;

[0051] Figure 4 It is the circuit diagram of the IGBT power module in the prior art;

[0052] Figure 5 It is the circuit diagram of the parallel-connected power module of SiC and IGBT in the prior art;

[0053] Figure 6 It is the circuit diagram of an embodiment of the power integration module of the present utility model;

[0054] Figure 7 It is the circuit diagram of another embodiment of the power integration module of the present utility model;

[0055] Figure 8 It is the layout structure diagram of an embodiment of the power integration module of the present utility model;

[0056] Figure 9 It is the layout structure diagram of another embodiment of the power integration module of the present utility model;

[0057] Figure 10 It is the layout structure diagram of yet another embodiment of the power integration module of the present utility model;

[0058] Figure 11 It is the side structure schematic diagram of an embodiment of the power integration module of the present utility model;

[0059] Figure 12 It is the front structure schematic diagram of an embodiment of the power integration module of the present utility model;

[0060] Figure 13 It is the back structure schematic diagram of an embodiment of the power integration module of the present utility model;

[0061] Figure 14 It is the front structure schematic diagram of another embodiment of the power integration module of the present utility model.

[0062] Explanation of the reference numerals in the drawings:

[0063] 100, power integration module; 1, substrate; 1a, first sub-substrate; 1b, second sub-substrate; 11, board main body; 12, conductive layer; 121, first conductive layer; 122, second conductive layer; 2, switching circuit; 21, bridge arm circuit; 211, upper bridge arm switching module; 212, lower bridge arm switching module; D1, first switching element; D2, second switching element; D3, third switching element; 3, first encapsulation housing; 4, second encapsulation housing; 5, copper sheet; 6, aluminum wire; 7, thermistor; 8, Pin pin; 9, heat dissipation bottom plate; 10, insulating part; DC+, first power supply terminal; DC-, second power supply terminal.

[0064] The realization of the object, functional features and advantages of the present utility model will be further described with reference to the embodiments and the accompanying drawings. Specific embodiments

[0065] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0066] It should be noted that if there are directional indications (such as up, down, left, right, front, back,...) involved in the embodiments of the present utility model, such directional indications are only used to explain the relative position relationship and movement conditions between components in a specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0067] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present utility model, such descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In addition, if "and / or" or "and / or" appears throughout the text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or a solution where A and B are satisfied simultaneously. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of those of ordinary skill in the art to implement. When the combination of technical solutions results in contradictions or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the protection scope required by the present utility model.

[0068] It is understandable that the motor is the core component of the drive system of new energy vehicles, and its working efficiency directly affects the driving performance and cruising range of the vehicle. The higher the motor efficiency, the farther the vehicle can be driven with the same amount of electricity, which helps to improve the cruising range achievement rate of the vehicle. The existing technology mainly improves the electric drive efficiency through power modules, reducing energy consumption losses and improving efficiency in two dimensions: conduction and switching of the power module, so as to achieve the purpose of increasing the cruising range of new energy electric vehicles. Since the current light vehicle driving cycle formulated by the state is CLTC, and the CLTC cycle is a medium and low current cycle, the efficiency of the power module at medium and small currents needs to be improved. It is also worth noting that the capabilities of the power module also determine the vehicle's power performance, that is, determine the vehicle's acceleration ability, so the vehicle also has relatively high requirements for the maximum current capacity of the power module.

[0069] The existing types of power modules for new energy vehicles mainly include third-generation semiconductor power devices such as SiC MOSFETs and second-generation semiconductor power devices such as Si IGBTs. These semiconductor power devices have their own advantages and disadvantages. Taking SiC MOSFETs and Si IGBTs as examples, the advantages and disadvantages of the above-mentioned semiconductor power devices will be introduced below. As Figure 1 and Figure 2 shown, SiC has no forward turn-on voltage, low voltage drop at small currents, and small conduction loss, but its large current conduction loss is not as good as that of IGBT; the switching loss of SiC is less than that of IGBT at all currents. Therefore, the power module integrated with SiC and / or IGBT has the following characteristics:

[0070] As Figure 3 shown, the SiC power module has the advantages of low switching loss and high efficiency, but the price is relatively high. To meet the power performance requirements of the vehicle, the SiC consumption of the module using a pure SiC solution is large, resulting in extremely high costs;

[0071] As Figure 4 shown, the IGBT power module has the advantages of strong large current capacity and low cost. However, due to the existence of a forward conduction voltage in the IGBT chip, the conduction loss is large at small currents, and the switching efficiency is restricted by its tail current;

[0072] As Figure 5 shown, the SiC and IGBT parallel power module can achieve the purpose of balancing the efficiency at medium and small currents and the peak current capacity by controlling the switching sequence. However, this solution uses two modules, resulting in high packaging costs, large space occupation, reduced power density, increased flow resistance of the water-cooled radiator, and poor heat dissipation effect.

[0073] To improve the above situation, the present utility model proposes a power integration module 100 for vehicles, aiming to enclose different switching elements in a single power integration module 100, combine the advantages of low switching loss and strong conduction ability of different switching elements, avoid the weaknesses of insufficient conduction ability, high cost and large switching loss of each device, and achieve a module solution with low cost and high efficiency on the premise of being compatible with a single structure.

[0074] In an embodiment of the present utility model, referring to Figure 6 and Figure 7 , the power integration module 100 may include, but is not limited to, a substrate 1 and a switching circuit 2. The substrate 1 is used to integrate the switching circuit 2. Optionally, the substrate 1 may be one of a ceramic substrate and a metal substrate. The ceramic substrate is an electronic material mainly composed of ceramics, with characteristics such as high thermal conductivity, high insulation, and low thermal expansion coefficient, which can effectively improve the heat dissipation performance of the switching circuit 2 thereon, and improve the durability and reliability of the power integration module 100. The metal substrate may be one of an aluminum substrate, a copper substrate, and an iron substrate. When the power integration module 100 of the present application is applied to a scenario with low outflow capacity, the substrate 1 may be implemented with an aluminum substrate. Compared with the ceramic substrate, the aluminum substrate has a lower cost and can effectively reduce the cost of the power integration module 100.

[0075] In a feasible implementation manner, the switching circuit 2 includes at least one arm circuit 21. That is to say, the switching circuit 2 may include one arm circuit 21, may also include two arm circuits 21, or may include three arm circuits 21, and specific limitations are not made here. To achieve the integration of the switching circuit 2, when the number of arm circuits 21 is one, the arm circuit 21 can be integrated on the substrate 1 after being encapsulated by a first encapsulation housing 3; when the number of arm circuits 21 is multiple, each of the multiple arm circuits 21 can be integrated on the substrate 1 after being encapsulated by a first encapsulation housing 3; or, every two of a part of the arm circuits 21 among the multiple arm circuits 21 are integrated on the substrate 1 after being encapsulated by a first encapsulation housing 3, and each of the other part of the arm circuits 21 among the multiple arm circuits 21 is integrated on the substrate 1 after being encapsulated by a second encapsulation housing 4, and specific limitations are not made here. Through the above settings, the arm circuit 21 can be integrated once and then integrated on the substrate 1 for the second time, which can effectively improve the integration degree of the power integration module 100.

[0076] Based on the above, each arm circuit 21 includes an upper-arm switching module 211 and a lower-arm switching module 212. The upper-arm switching module 211 and the lower-arm switching module 212 of each arm circuit 21 are connected in series between a first power supply terminal DC+ and a second power supply terminal DC- to receive the DC voltage output from the first power supply terminal DC+ and the second power supply terminal DC-. The output terminals of the upper-arm switching module 211 and the lower-arm switching module 212 of each arm circuit 21 are respectively used to connect to a load, the load is a motor, and when in the working state, the received DC voltage is converted into an AC voltage and then output to the motor to drive the motor to rotate.

[0077] In a feasible implementation manner, at least one of the upper-arm switching module 211 and the lower-arm switching module 212 of each arm circuit 21 includes a first switching element D1 and a second switching element D2, wherein the semiconductor types of the first switching element D1 and the second switching element D2 are different.

[0078] That is to say, the upper-arm switching module 211 of an arm circuit 21 may include both the first switching element D1 and the second switching element D2, and the lower-arm switching module 212 corresponding to the arm circuit 21 may also include both the first switching element D1 and the second switching element D2; or, the upper-arm switching module 211 of an arm circuit 21 may include both the first switching element D1 and the second switching element D2, and the lower-arm switching module 212 corresponding to the arm circuit 21 only includes one of the first switching element D1 and the second switching element D2; or, the upper-arm switching module 211 of an arm circuit 21 only includes one of the first switching element D1 and the second switching element D2, and the lower-arm switching module 212 corresponding to the arm circuit 21 may include both the first switching element D1 and the second switching element D2.

[0079] Specifically, in the embodiments of the present invention, the upper-arm switching module 211 and the lower-arm switching module 212 of each arm circuit 21 respectively include a first switching element D1 and a second switching element D2, and the semiconductor types of the first switching element D1 and the second switching element D2 of the upper-arm switching module 211 and the lower-arm switching module 212 of each arm circuit 21 are different, so as to combine the advantages of different switching elements and avoid the weaknesses of insufficient conduction ability, high cost and large switching loss of each device, thereby improving the switching efficiency of the power integration module 100 of the present application, and further improving the driving efficiency and current capacity of the vehicle.

[0080] In a feasible implementation manner, the device type of the first switching element D1 and / or the second switching element D2 can be one of gate turn-off thyristor (GTO), power transistor (GTR), metal-oxide-semiconductor field-effect transistor (MOSFET), conductivity modulation field-effect transistor (COMFET), high electron mobility transistor (HEMT), static induction transistor (SIT), insulated gate bipolar transistor (IGBT), integrated gate-commutated thyristor (IGCT), and junction field-effect transistor (JFET). These devices can be made of semiconductor materials such as silicon carbide (SiC), silicon (Si), and gallium nitride (GaN) to form second-generation semiconductor power devices such as Si IGBT or third-generation semiconductor power devices such as SiC MOSFET and GaN HEMT. Since the most commonly used semiconductor power devices in the power modules of current new energy vehicles are SiC MOSFET, Si IGBT, and GaN HEMT, and their conduction capabilities from high to low are Si IGBT, SiC MOSFET, GaN HEMT; the switching losses from low to high are GaN HEMT, SiC MOSFET, Si IGBT; and the costs from low to high are Si IGBT, GaN HEMT, SiC MOSFET. Therefore, in order to better combine the advantages of the above-mentioned switching devices, in the embodiments of the present invention, the upper-bridge-arm switching module 211 and the lower-bridge-arm switching module 212 of each bridge-arm circuit 21 respectively include the first switching element D1 and the second switching element D2. Among them, the first switching element D1 is implemented by using SiC MOSFET, and the second switching element D21 is implemented by using Si IGBT, so as to combine the advantages of the SiC power module with low switching loss and high efficiency, and the IGBT power module with strong large-current capacity and low cost, avoid the weakness of the large SiC consumption of the pure SiC solution module resulting in high cost, and at the same time avoid the characteristic that the IGBT power module has a forward conduction voltage resulting in large conduction loss at small currents. On the premise of being compatible with the original single structure, a module solution with low cost and high efficiency is realized.

[0081] The technical solution of the present utility model is achieved by providing a power integration module 100 and a vehicle. The power integration module 100 includes a substrate 1 and a switching circuit 2; the switching circuit 2 is integrated on the substrate 1; the switching circuit 2 includes at least one arm circuit 21; each arm circuit 21 includes an upper arm switching module 211 and a lower arm switching module 212; the upper arm switching module 211 and the lower arm switching module 212 are connected in series between a first power supply terminal DC+ and a second power supply terminal DC-; at least one of the upper arm switching module 211 and the lower arm switching module 212 includes a first switching element D1 and a second switching element D2, and the semiconductor types of the first switching element D1 and the second switching element D2 are different. By encapsulating different switching elements in a single power integration module 100, the present utility model combines the advantages of low switching loss and strong conduction ability of different switching elements, avoids the weaknesses of insufficient conduction ability, high cost and large switching loss of each device, and realizes a module solution with low cost and high efficiency on the premise of being compatible with a single structure.

[0082] In a feasible implementation manner, referring to Figure 7 , the device types of the first switching element D1 and / or the second switching element D2 of each arm circuit 21 may include GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET, and the semiconductor materials of the first switching element D1111 and / or the second switching element D2 of each arm circuit 21 may include SiC, Si, GaN.

[0083] In an embodiment of the present utility model, the semiconductor type of the first switching element D1111 and / or the second switching element D2 of each arm circuit 21 is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET and any one of SiC, Si, GaN.

[0084] In a feasible implementation manner, referring to Figure 7 , the first switching element D1 of each arm circuit 21 is a SiC MOSFET, and the second switching element D2 of each arm circuit 21 is a Si IGBT. By utilizing the characteristics of low switching loss and low efficiency of the SiC MOSFET and the strong large-current ability and low cost of the Si IGBT, the switching efficiency of the switching circuit 2 is improved, and at the same time, the cost of the switching circuit 2 is reduced.

[0085] In a feasible implementation manner, referring to Figure 7, the upper bridge arm switch module 211 and the lower bridge arm switch module 212 of each bridge arm circuit 21 further include a third switching element D3. The third switching element D3 is implemented by a diode, and the model and source of the diode are not limited herein. The diodes are respectively connected in parallel with the first switching element D1 and the second switching element D2 of the corresponding bridge arm switch module, and are mainly used to stabilize the voltage output by the switching circuit 2 and improve the operating stability of the switching circuit 2.

[0086] In a feasible implementation manner, referring to Figure 8 , the number of bridge arm circuits 21 is multiple, and the multiple bridge arm circuits 21 are arranged in parallel. To achieve a reasonable layout of the multiple bridge arm circuits 21, the multiple bridge arm circuits 21 are arranged in sequence along a first direction on the substrate 1, where the first direction is the length direction of the substrate 1.

[0087] In a feasible implementation manner, referring to Figure 8 and Figure 11 , the power integration module 100 further includes a first encapsulation housing 3, and the number of the first encapsulation housings 3 is multiple. At least one bridge arm circuit 21 is encapsulated in each first encapsulation housing 3.

[0088] That is to say, in the case where there are multiple bridge arm circuits 21, the multiple bridge arm circuits 21 can each be encapsulated by a first encapsulation housing 3 and then integrated on the substrate 1; or, two of the multiple bridge arm circuits 21 can each be encapsulated by a first encapsulation housing 3 and then integrated on the substrate 1; or, every two of a part of the multiple bridge arm circuits 21 can each be encapsulated by a first encapsulation housing 3 and then integrated on the substrate 1, and each of the other part of the multiple bridge arm circuits 21 can be encapsulated by a first encapsulation housing 3 and then integrated on the substrate 1. It can be seen that there are various encapsulation methods for the multiple bridge arm circuits 21, which are not limited herein specifically. By encapsulating each bridge arm circuit 21, not only can the convenience of installing each bridge arm circuit 21 on the substrate 1 be improved, but also the integration degree of each bridge arm circuit 21 can be improved, thereby improving the integration degree of the power integration module 100.

[0089] In a feasible implementation manner, referring to Figure 8 , every three of the multiple bridge arm circuits 21 form a three-phase full-bridge circuit, and the three bridge arm circuits 21 in each three-phase full-bridge circuit are connected in parallel with each other. To achieve a reasonable layout of the multiple three-phase full-bridge circuits, the multiple three-phase full-bridge circuits are arranged in sequence along the first direction on the substrate 1.

[0090] For ease of understanding, take the number of the arm circuits 21 as nine as an example. Every three of the nine arm circuits 21 form a three-phase full-bridge circuit, and three three-phase full-bridge circuits are arranged in sequence along the first direction on the substrate 1, where the first direction is the length direction of the substrate 1.

[0091] In a feasible implementation manner, referring to Figure 8 , to achieve a reasonable layout of multiple three-phase full-bridge circuits, each three-phase full-bridge circuit includes a first-phase arm circuit, a second-phase arm circuit, and a third-phase arm circuit. The first-phase arm circuits of multiple three-phase full-bridge circuits are arranged side by side along the first direction, the second-phase arm circuits of multiple three-phase full-bridge circuits are arranged side by side along the first direction, and the third-phase arm circuits of multiple three-phase full-bridge circuits are arranged side by side along the first direction.

[0092] For ease of understanding, take the above embodiment as an example. The first-phase arm circuits of three three-phase full-bridge circuits are arranged side by side along the first direction, the second-phase arm circuits of three three-phase full-bridge circuits are arranged side by side along the first direction, and the third-phase arm circuits of three three-phase full-bridge circuits are arranged side by side along the first direction.

[0093] In a feasible implementation manner, referring to Figure 9 , the first-phase arm circuits of multiple three-phase full-bridge circuits are arranged at intervals along the first direction, that is, there is an interval between the first-phase arm circuits of different three-phase full-bridge circuits. And, the second-phase arm circuit and the third-phase arm circuit of each three-phase full-bridge circuit are arranged side by side and adjacent along the first direction. By setting like this, the volume of the switching circuit 2 can be compressed in the length direction of the substrate 1, and the integration degree of the power integration module 100 can be improved.

[0094] In a feasible implementation manner, the first-phase arm circuit, the second-phase arm circuit, and the third-phase arm circuit of the same three-phase full-bridge circuit are arranged side by side along the second direction, where the second direction is the width direction of the substrate 1. By setting like this, the volume of the switching circuit 2 can also be compressed in the length direction of the substrate 1, and the integration degree of the power integration module 100 can be improved.

[0095] In a feasible implementation manner, referring to Figure 9, the power integration module 100 further includes a second encapsulation housing 4, and the number of the second encapsulation housings 4 is multiple. The first-phase bridge arm circuit of each three-phase full-bridge circuit can be encapsulated by a first encapsulation housing 3 respectively, and the overall circuits of the second-phase bridge arm circuit and the third-phase bridge arm circuit of each three-phase full-bridge circuit can be encapsulated by a second encapsulation housing 4 respectively; alternatively, the first-phase bridge arm circuit of each three-phase full-bridge circuit can be encapsulated by a first encapsulation housing 3 respectively. After the second-phase bridge arm circuit and the third bridge arm circuit 21 of each three-phase full-bridge circuit are encapsulated by a first encapsulation housing 3 respectively, the encapsulated second-phase bridge arm circuit and third-phase bridge arm circuit are encapsulated by a second encapsulation housing 4.

[0096] In a feasible implementation manner, referring to Figure 10 , the substrate 1 includes a first sub-substrate 1a and a second sub-substrate 1b. One phase of the bridge arm circuit 21 in multiple three-phase full-bridge circuits is arranged on the first sub-substrate 1a, and the other two phases of the bridge arm circuits 21 in multiple three-phase full-bridge circuits are arranged on the second sub-substrate 1b. For example, the first-phase bridge arm circuits of three three-phase full-bridge circuits are arranged on the first sub-substrate 1a, and the second-phase bridge arm circuits and the third-phase bridge arm circuits of three three-phase full-bridge circuits are arranged on the second sub-substrate 1b.

[0097] Since the total area of the first sub-substrate 1a and the second sub-substrate 1b is equal to the area of the substrate 1, it can be seen that the area of a single first sub-substrate 1a or a single second sub-substrate 1b is smaller than the area of a single substrate 1, and its adaptability in the market is stronger, and it is more convenient to replace when damaged.

[0098] In a feasible implementation manner, referring to Figure 10 , to achieve a reasonable layout of the related devices of each bridge arm circuit 21, the upper bridge arm switch modules 211 of multiple bridge arm circuits 21 are arranged side by side along the first direction, and the lower bridge arm switch modules 212 of multiple bridge arm circuits 21 are arranged side by side along the first direction. On the basis of this arrangement method, in another feasible implementation manner, the upper bridge arm switch module 211 and the lower bridge arm switch module 212 of the same bridge arm circuit 21 are arranged at intervals along the second direction, where the first direction is the length direction of the substrate 1, and the second direction is the width direction of the substrate 1. By setting like this, the area occupied by each bridge arm circuit 21 on the substrate 1 can be reduced in the length direction of the substrate 1, the volume of each bridge arm circuit 21 can be reduced, and the integration degree of the power integration module 100 can be improved.

[0099] In a feasible implementation manner, to achieve a reasonable layout of the related devices of the upper bridge arm switch module 211, when the upper bridge arm switch module 211 of each bridge arm circuit 21 includes a first switching element D1 and a second switching element D2, the first switching element D1 and the second switching element D2 of each upper bridge arm switch module 211 are arranged side by side along the first direction.

[0100] In another feasible implementation manner, to achieve a reasonable layout of the related devices of the lower bridge arm switching module 212, when the lower bridge arm switching module 212 of each bridge arm circuit 21 includes a first switching element D1 and a second switching element D2, the first switching element D1 and the second switching element D2 of each lower bridge arm switching module 212 are arranged side by side in the first direction.

[0101] In a feasible implementation manner, to achieve a reasonable layout of the related devices of each bridge arm circuit 21, in addition to the manner in which the upper bridge arm switching modules 211 and the lower bridge arm switching modules 212 of the multiple bridge arm circuits 21 are arranged in the first direction, it is also possible that the upper bridge arm switching module 211 and the lower bridge arm switching module 212 of each bridge arm circuit 21 are arranged side by side and adjacent to each other in the first direction, thereby compressing the volume of the switching circuit 2 in terms of width and achieving the integration of the power integration module 100.

[0102] In a feasible implementation manner, when the upper bridge arm switching module 211 of each bridge arm circuit 21 includes a first switching element D1 and a second switching element D2, the first switching element D1 and the second switching element D2 of each upper bridge arm switching module 211 are arranged side by side and adjacent to each other in the first direction, making the layout of the upper bridge arm switching module 211 of each bridge arm circuit 21 more reasonable, reducing the occupied area of each bridge arm circuit 21 on the substrate 1, shrinking the volume of the switching circuit 2, and achieving the integration of the power integration module 100.

[0103] In a feasible implementation manner, when the lower bridge arm switching module 212 of each bridge arm circuit 21 includes a first switching element D1 and a second switching element D2, the first switching element D1 and the second switching element D2 of each lower bridge arm switching module 212 are arranged side by side and adjacent to each other in the first direction, making the layout of the lower bridge arm switching module 212 of each bridge arm circuit 21 more reasonable, and also reducing the occupied area of each bridge arm circuit 21 on the substrate 1, shrinking the volume of the switching circuit 2, and achieving the integration of the power integration module 100.

[0104] In a feasible implementation manner, referring to Figure 11 , the substrate 1 includes a board main body 11 and a conductive layer 12. The conductive layer 12 is provided on one side of the board main body 11, and the switching circuit 2 is disposed on the conductive layer 12. The conductive layer 12 is implemented by using a conductive copper foil. The conductive copper foil as the conductive layer 12 can provide a lower resistance and a faster signal transmission speed, thereby ensuring the efficient connection and stable operation between the switching devices of the switching circuit 2.

[0105] In a feasible implementation manner, referring to Figures 12 to 14, when a first switching element D1, a second switching element D2, and a third switching element D3 are respectively connected in parallel to the upper-bridge switching module 211 and the lower-bridge switching module 212 of each arm circuit 21, the output terminal, the connection terminal, and the input terminal of the first switching element D1 of each arm circuit 21 are respectively the drain, the gate, and the source of the SiC MOSFET; the output terminal, the connection terminal, and the input terminal of the second switching element D2 of each arm circuit 21 are respectively the collector, the emitter, and the base of the Si IGBT; the output terminal and the input terminal of the third switching element D3 of each arm circuit 21 are respectively the anode and the cathode of the diode. The drain of the SiC MOSFET, the collector of the Si IGBT, and the anode of the diode are all welded / sintered to the conductive layer 12, and the source of the SiC MOSFET is connected to the conductive layer 12 via a copper sheet 5. The emitter of the Si IGBT and the cathode of the diode are connected to the conductive layer 12 via an aluminum wire 6. The gate and the source of the SiC MOSFET and the base of the Si IGBT are all connected to the conductive layer 12 via an aluminum wire 6.

[0106] In a feasible implementation manner, referring to Figures 12 to 14 , a thermistor 7 is disposed on the conductive layer 12. The thermistor 7, the first switching element D1, and the second switching element D2 are arranged at intervals along the third direction. The thermistor 7 is electrically connected to the drive circuit of the power integration module 100. The thermistor 7 mainly utilizes the characteristic that the resistance value of the material is different at different temperatures to realize the measurement and control of the temperatures of the first switching element D1 and the second switching element D2.

[0107] In a feasible implementation manner, referring to Figures 12 to 14 , a Pin pin 8 is also welded to the conductive layer 12. The thermistor 7 is connected to the Pin pin 8 through a conductive copper layer. As can be seen from the above embodiments, the first switching element D1 is implemented by a SiC MOSFET, and the second switching element D2 is implemented by a Si IGBT. In this embodiment, the gate and the source of the SiC MOSFET and the base of the Si IGBT are all connected to the Pin pin 8 via the aluminum wire 6 and the conductive layer 12; the emitter of the Si IGBT is connected to the Pin pin 8 via the aluminum wire 6 and the conductive layer 12; the first power supply terminal DC+ is connected to the Pin pin 8 via the aluminum wire 6 and the conductive layer 12.

[0108] In a feasible implementation manner, referring to Figures 12 to 14 , the non-connected sections of the substrate 1, the copper sheet 5, the aluminum wire 6, and the Pin pin 8 are encapsulated by an insulating member 10, which can improve the insulation performance of the power integration module 100.

[0109] In a feasible implementation manner, the power integration module 100 further includes a heat dissipation bottom plate 9. The conductive layer 12220 includes a first conductive layer 121 and a second conductive layer 122. The switching circuit 2, the first conductive layer 121, the substrate 1, the second conductive layer 122, and the heat dissipation bottom plate 9 are sequentially stacked along a fourth direction. The heat dissipation bottom plate 9 can dissipate heat from the switching circuit 2 on the substrate 1 to alleviate the problem of thermal expansion and contraction between the switching devices of the switching circuit 2, and improve the durability and reliability of the switching circuit 2. Moreover, the switching circuit 2 can establish an electrical connection relationship with the substrate 1 through the first conductive layer 121, and the heat dissipation bottom plate 9 can establish an electrical connection relationship with the substrate 1 through the second conductive layer 122, simplifying the circuit connection of the power integration module 100 and improving the integration degree of the power integration module 100.

[0110] The present utility model further provides a vehicle, which includes the power integration module 100. The specific structure of the power integration module 100 refers to the above embodiments. Since this vehicle adopts all the technical solutions of the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, which will not be elaborated herein one by one.

[0111] The above are only partial embodiments of the present utility model, and thus do not limit the patent scope of the present utility model. Any equivalent structural transformation made under the technical concept of the present utility model by using the content of the specification and drawings of the present utility model, or any direct / indirect application in other related technical fields is included in the patent protection scope of the present utility model.

Claims

1. A power integrated module, characterized in that: include: substrate; A switch circuit, wherein the switch circuit is integrated on the substrate; The switch circuit includes at least one bridge arm circuit; Each of the bridge arm circuits comprises an upper bridge arm switch module and a lower bridge arm switch module; The upper bridge arm switch module and the lower bridge arm switch module are connected in series between a first power supply terminal and a second power supply terminal. At least one of the upper bridge arm switch module and the lower bridge arm switch module includes a first switch element and a second switch element. The semiconductor types of the first switch element and the second switch element are inconsistent.

2. The power integrated module according to claim 1, characterized in that: The device types of the first switching element and / or the second switching element include GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, and JFET; The semiconductor material of the first switch element and / or the second switch element includes SiC, Si, and GaN; The semiconductor type of the first switching element and / or the second switching element is a combination of any one of GTO, GTR, MOSFET, COMFET, HEMT, SIT, IGBT, IGCT, JFET and any one of SiC, Si, GaN.

3. The power integrated module according to claim 2, characterized in that: The first switching element is a SiC MOSFET, and the second switching element is a Si IGBT.

4. The power integrated module according to claim 1, characterized in that: The upper bridge arm switch module and / or the lower bridge arm switch module further includes a third switch element, which is connected in parallel with the first switch element and the second switch element of the corresponding bridge arm switch module, and the semiconductor types of the first switch element, the second switch element and the third switch element are different from each other.

5. The power integrated module according to claim 1, characterized in that: There are multiple bridge arm circuits, and the multiple bridge arm circuits are arranged in parallel and arranged in sequence along a first direction on the substrate.

6. The power integrated module according to claim 5, characterized in that: The power integration module further includes a first packaging shell. There are multiple first packaging shells, and at least one bridge arm circuit is packaged in each of the first packaging shells.

7. The power integrated module according to claim 6, characterized in that: Every three bridge arm circuits in the plurality of bridge arm circuits form a three-phase full-bridge circuit, and the plurality of three-phase full-bridge circuits are sequentially arranged along a first direction on the substrate.

8. The power integrated module according to claim 7, characterized in that: Each of the three-phase full-bridge circuits includes a first-phase bridge arm circuit, a second-phase bridge arm circuit and a third-phase bridge arm circuit. The first-phase bridge arm circuits of the multiple three-phase full-bridge circuits are arranged side by side along a first direction, the second-phase bridge arm circuits of the multiple three-phase full-bridge circuits are arranged side by side along the first direction, and the third-phase bridge arm circuits of the multiple three-phase full-bridge circuits are arranged side by side along the first direction.

9. The power integrated module according to claim 8, characterized in that: The first phase bridge arm circuits of the plurality of three-phase full-bridge circuits are arranged at intervals along the first direction, and the second phase bridge arm circuit and the third phase bridge arm circuit of each three-phase full-bridge circuit are arranged side by side and adjacent to each other along the first direction.

10. The power integrated module according to claim 8, characterized in that: The first phase bridge arm circuit, the second phase bridge arm circuit and the third phase bridge arm circuit of the same three-phase full-bridge circuit are arranged side by side along a second direction, and the second direction intersects with the first direction.

11. The power integrated module according to claim 8, characterized in that: The power integrated module further includes a second packaging shell, the number of the second packaging shells is multiple, the first phase bridge arm circuit of each of the three-phase full-bridge circuits is packaged in one of the first packaging shells; the second phase bridge arm circuit and the third phase bridge arm circuit of each of the three-phase full-bridge circuits are packaged in one of the second packaging shells; Alternatively, the second phase bridge arm circuit and the third phase bridge arm circuit of each of the three-phase full-bridge circuits are each packaged by a first packaging shell and then packaged by a second packaging shell.

12. The power integrated module according to claim 8, characterized in that: The substrate includes a first sub-substrate and a second sub-substrate, a plurality of first-phase bridge arm circuits of the three-phase full-bridge circuits are arranged on the first sub-substrate, and a plurality of second-phase bridge arm circuits and third-phase bridge arm circuits of the three-phase full-bridge circuits are respectively arranged on the second sub-substrate.

13. The power integrated module according to claim 5, characterized in that: A plurality of upper bridge arm switch modules of the bridge arm circuits are arranged side by side along a first direction, and a plurality of lower bridge arm switch modules of the bridge arm circuits are arranged side by side along the first direction.

14. The power integrated module according to claim 13, characterized in that: The upper bridge arm switch module and the lower bridge arm switch module of the same bridge arm circuit are arranged at intervals along a second direction, and the second direction intersects with the first direction.

15. The power integrated module according to claim 13, characterized in that: The upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side along the first direction; And / or, the lower bridge arm switch module of each of the bridge arm circuits includes a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side along the first direction.

16. The power integrated module according to claim 5, characterized in that: The upper bridge arm switch module and the lower bridge arm switch module of each bridge arm circuit are arranged side by side and adjacent to each other along the first direction.

17. The power integrated module according to claim 16, characterized in that: The upper bridge arm switch module of each of the bridge arm circuits comprises a first switch element and a second switch element, and the first switch element and the second switch element of the upper bridge arm switch module are arranged side by side and adjacent to each other along the first direction; And / or, the lower bridge arm switch module of each of the bridge arm circuits includes a first switch element and a second switch element, and the first switch element and the second switch element of the lower bridge arm switch module are arranged side by side and adjacent to each other along the first direction.

18. The power integrated module according to any one of claims 1 to 16, characterized in that: The substrate includes a board body and a conductive layer arranged on one side of the board body, and the switch circuit is arranged on the conductive layer.

19. The power integrated module according to claim 18, characterized in that: The output end of the first switch element, the output end of the second switch element and the output end of the third switch element of the bridge arm circuit are welded or sintered on the conductive layer; The connection end of the first switch element is connected to the conductive layer via a copper sheet; The input end of the first switch element, the input end and the connection end of the second switch element, and the input end of the third switch element are all connected to the conductive layer via aluminum wires.

20. The power integrated module according to claim 19, characterized in that: A thermistor is disposed on the conductive layer. The thermistor, the first switch element, and the second switch element are spaced apart along the third direction. The thermistor is electrically connected to a drive circuit of the power integrated module.

21. The power integrated module according to claim 20, characterized in that: The conductive layer is also provided with a Pin needle, and the Pin needle is electrically connected to the driving circuit; The input end of the first switch element, the input end and the connection end of the second switch element, and the input end of the third switch element are connected to the Pin needle in sequence through an aluminum wire and a conductive layer; The thermistor is connected to the Pin needle through the conductive layer.

22. The power integrated module according to claim 21, characterized in that: The substrate, the copper sheet, the aluminum wire and the non-connected section of the Pin needle are packaged with an insulating member.

23. The power integrated module according to claim 18, characterized in that: The power integrated module further includes a heat dissipation base plate, the conductive layer includes a first conductive layer and a second conductive layer, and the switch circuit, the first conductive layer, the substrate, the second conductive layer and the heat dissipation base plate are sequentially stacked along a fourth direction.

24. A vehicle, characterized in that: Comprising a power integrated module as claimed in any one of claims 1 to 23.

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