Deposition device

Abstract

A deposition apparatus includes a hollow cathode, a first power source, and a substrate. The hollow cathode comprises a target material with a through hole, the through hole is used for circulating process gas, the first power source is electrically connected with the target material and used for generating an electric field in the through hole, the substrate and the output end of the hollow cathode are distributed at intervals in the flowing direction of the process gas, and the projection of the through hole is located in the projection range of the substrate. Wherein the through hole is of a strip-shaped structure, so that the through-flow sectional area of the through hole can be enlarged, plasmas are more concentrated, the plasma density in the through hole is improved, more ions bombard the surface of the target material, more ions and electrons collide with each other, the ionization rate of process gas and the target material is improved, and more nano crystal nucleuses are formed; and in the plasma, ions are condensed to form nanoparticles with different sizes, so that the production efficiency of the nanoparticles is improved. And the single large through hole can reduce the flow resistance of the process gas, so that the nano-particle layer deposited on the substrate is more uniform.

Description

Technical Field

[0001] The present application relates to the technical field of vacuum coating, and particularly to a deposition device. Background Art

[0002] Hollow Cathode Deposition (HCD) is a physical vapor deposition technology that mainly utilizes the characteristics of hollow cathode discharge to deposit thin films or nanoparticle coatings, and is usually used to prepare thin film materials with high quality, high purity, and good adhesion.

[0003] During the process of depositing nanoparticle coatings by hollow cathode, process gas is introduced into the through-hole of the target. By applying an appropriate voltage to the target, the process gas is ionized into ions and electrons in the through-hole, and the ionized ions will bombard the target under the action of the electric field to sputter out atoms or molecules on the surface of the through-hole of the target. The atoms or molecules of the target will adsorb and condense with each other to form crystal nuclei of different sizes, and finally deposit on the substrate to form a thin film or nanoparticle coating. However, in the prior art, the area of the through-hole of the target is small, resulting in a low deposition rate of crystal nuclei, thus affecting the preparation efficiency of the thin film or nanoparticle coating. Summary of the Utility Model

[0004] In view of this, the present application provides a deposition device to solve the technical problem in the prior art that the small area of the through-hole of the target leads to low deposition efficiency of crystal nuclei.

[0005] The present application provides a deposition device, which includes a hollow cathode, a first power supply, and a substrate. The hollow cathode has a through-hole for flowing process gas. The first power supply is electrically connected to the hollow cathode to generate an electric field in the through-hole. Along the direction of the flow of the process gas, the substrate is spaced apart from the output end of the hollow cathode, and the projection of the through-hole is within the projection range of the substrate. Wherein, the hollow cathode includes a target, the target is provided with the through-hole, and along the direction of the flow of the process gas, the cross-sectional shape of the through-hole is a strip structure.

[0006] In the embodiments of the present application, the through hole is used to guide the directional flow of process gas, and the first power supply is used to generate an asymmetric electric field inside the through hole. When the process gas flows inside the through hole, the process gas is ionized under the action of the electric field, so that the molecules and atoms of the process gas absorb sufficient energy and then turn into positively charged process gas ions and negatively charged process gas electrons. Moreover, the ionized process gas ions will accelerate towards the direction close to the inner wall of the through hole under the action of the electric field, that is, the process gas ions will bombard the surface of the target under the action of the electric field, so that the molecules and atoms on the surface of the target are sputtered out and are further ionized into positively charged target ions and negatively charged target electrons under the action of the electric field, so that the target ions and the non-ionized target atoms will agglomerate into nanoparticles and deposit on the surface of the substrate. As more nanoparticles are deposited and grown, the deposition of nanoparticles is finally realized.

[0007] Specifically, along the flow direction of the process gas, the cross-sectional shape of the through hole can be a strip structure. By such a design method, the flow cross-sectional area of the through hole can be enlarged, so that the plasma is more concentrated to increase the plasma density inside the through hole, so that more ions bombard the surface of the target, and more ions and electrons collide with each other, so as to increase the ionization rate of the process gas and the target, and further facilitate improving the sputtering efficiency and deposition efficiency.

[0008] At the same time, a single through hole with a large flow cross-sectional area can reduce the flow resistance of the process gas, so that it can flow into the through hole more smoothly for ionization. Moreover, the plasma generated after ionization will be more evenly distributed inside the through hole, making the nanoparticle layer deposited on the substrate more uniform, which is beneficial to improving the product quality and more in line with the actual production requirements.

[0009] In addition, a single through hole with a large flow cross-sectional area is more convenient for processing, maintenance and cleaning, which is beneficial to reducing the processing difficulty and maintenance cost.

[0010] In a possible implementation manner, along the direction perpendicular to the flow direction of the process gas, the length dimension of the through hole is L1, the width dimension of the through hole is L2, and L1 and L2 satisfy 0.025 ≤ L2 / L1 ≤ 0.15, L1 satisfies 200 mm ≤ L1 ≤ 400 mm, and L2 satisfies 10 mm ≤ L2 ≤ 30 mm.

[0011] In a possible implementation manner, along the direction perpendicular to the flow direction of the process gas, the thickness of the target is H, and H satisfies 5 mm ≤ H ≤ 10 mm.

[0012] In a possible implementation manner, along the flow direction of the process gas, the depth of the through hole is D, and D satisfies D ≥ 2×λ, where λ is the mean free path of the gas.

[0013] In a possible implementation, the deposition device further includes a magnetic pole assembly and a second power source. The magnetic pole assembly is sleeved on the outer wall of the hollow cathode, and the second power source is electrically connected to the magnetic pole assembly for generating a magnetic field in the through hole.

[0014] In a possible implementation, along the direction of the process gas flow, the magnetic induction intensity at the axis of the through hole is B, and B satisfies 200 Gs ≤ B ≤ 500 Gs.

[0015] In a possible implementation, the hollow cathode further includes a cooling device. The cooling device is sleeved on the outer wall of the target, and the cooling device is provided with a coolant inlet and a coolant outlet. Along the direction perpendicular to the flow direction of the process gas, the coolant inlet and the coolant outlet are centrosymmetric with respect to the axis of the through hole.

[0016] In a possible implementation, the deposition device further includes a heating device. Along the direction of the process gas flow, the heating device is located on the side of the substrate away from the hollow cathode and is spaced apart from the substrate.

[0017] In a possible implementation, the deposition device further includes a moving device. The substrate is mounted on the moving device for driving the substrate to move along the direction perpendicular to the flow direction of the process gas.

[0018] In a possible implementation, the deposition device further includes a body. The body is provided with a first accommodation cavity, a first air inlet and a second air inlet communicating with the first accommodation cavity. The first accommodation cavity is used to accommodate the hollow cathode and the substrate. Along the direction of the process gas flow, the first air inlet is located on the side of the hollow cathode away from the substrate for conveying the process gas, and the second air inlet is located between the hollow cathode and the substrate for conveying the reaction gas.

[0019] It should be understood that the above general description and the following detailed description are only exemplary and do not limit the present application. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 is a partial cross-sectional structural schematic diagram of the deposition device provided by the present application in an embodiment;

[0022] Figure 2 is Figure 1 The front view of the hollow cathode;

[0023] Figure 3 is Figure 2 The side view of

[0024] Description of reference numerals in the drawings:

[0025] 1 - Body;

[0026] 11 - First accommodation cavity;

[0027] 12 - First air inlet;

[0028] 13 - Second air inlet;

[0029] 14 - Second air outlet;

[0030] 2 - Hollow cathode;

[0031] 21 - Target;

[0032] 211 - Through hole;

[0033] 22 - Magnetic pole assembly;

[0034] 23 - Cooling device;

[0035] 231 - Coolant inlet;

[0036] 232 - Coolant outlet;

[0037] 3 - First power supply;

[0038] 4 - Substrate;

[0039] 5 - Second power supply;

[0040] 6 - Heating device;

[0041] 7 - Isolation cover;

[0042] 71 - Second accommodation cavity;

[0043] 72 - Third air inlet;

[0044] 73 - First air outlet;

[0045] 8 - Vacuum pump.

[0046] The drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with this application, and are used together with the specification to explain the principles of this application. Detailed implementation manners

[0047] For a better understanding of the technical solutions of this application, the embodiments of this application will be described in detail below with reference to the drawings.

[0048] It should be clear that the described embodiments are only a part of the embodiments of this application, rather than all of them. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of this application.

[0049] The terms used in the embodiments of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The singular forms "a", "the" and "said" used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0050] It should be understood that the term " / and" used herein is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, a / or b can represent: a exists alone, a and b exist simultaneously, and b exists alone. In addition, the character " / " herein generally represents an "or" relationship between the associated objects before and after.

[0051] The embodiments of this application provide a deposition device, such as Figure 1 and Figure 2 shown, the deposition device includes a hollow cathode 2, a first power supply 3 and a substrate 4. Among them, the hollow cathode 2 includes a target 21, the target 21 is provided with a through hole 211, the positive electrode of the first power supply 3 is connected to the ground, the negative electrode of the first power supply 3 is connected to the hollow cathode 2, along the direction of the process gas flow, the substrate 4 and the output end of the hollow cathode 2 are spaced apart, and the projection of the through hole 211 is located within the projection range of the substrate 4.

[0052] In the embodiments of this application, the through hole 211 is used to guide the directional flow of the process gas, and the first power supply 3 is used to generate an asymmetric electric field in the through hole 211. When the process gas flows in the through hole 211, the process gas is ionized under the action of the electric field, so that the molecules and atoms of the process gas absorb enough energy and then turn into positively charged process gas ions and negatively charged process gas electrons. And the ionized process gas ions will accelerate towards the direction close to the inner wall of the through hole 211 under the action of the electric field, that is, the process gas ions will bombard the surface of the target 21 under the action of the electric field, so that the molecules and atoms on the surface of the target 21 are sputtered out and are further ionized into positively charged target ions and negatively charged target electrons under the action of the electric field, so that the target ions and the non-ionized target atoms will agglomerate into nanoparticles and deposit on the surface of the substrate 4, and with the deposition and growth of more nanoparticles, the deposition of nanoparticles on the surface of the substrate 4 is finally realized.

[0053] Specifically, along the direction of process gas flow, the cross-sectional shape of the through-hole 211 can be a strip structure. Through such a design method, the flow cross-sectional area of the through-hole 211 can be enlarged, enabling the plasma to be more concentrated to increase the plasma density inside the through-hole 211, so that more ions bombard the surface of the target 21, and more ions and electrons collide with each other, thereby increasing the ionization rate of the process gas and the target 21, and further facilitating the improvement of the sputtering efficiency and deposition efficiency.

[0054] Meanwhile, the single through-hole 211 with a large flow cross-sectional area can reduce the flow resistance of the process gas, enabling it to flow into the through-hole 211 more smoothly for ionization. Moreover, the distribution of the plasma generated after ionization in the through-hole 211 will also be more uniform, making the nano-particle layer deposited on the substrate 4 more uniform, which is conducive to improving the product quality and better meeting the actual production requirements.

[0055] In addition, the single through-hole 211 with a large flow cross-sectional area is more convenient for processing, maintenance, and cleaning, which is conducive to reducing the processing difficulty and maintenance cost.

[0056] More specifically, along the direction of process gas flow, the cross-sectional shape of the through-hole 211 can be linear or curved.

[0057] In a possible implementation manner, the material of the target 21 can be one or more of titanium, chromium, carbon, niobium, copper, aluminum, iron, nickel, cobalt, manganese, strontium, and lanthanum, so as to meet the requirements of the substrate 4 in different scenarios, which is conducive to improving the versatility of the deposition device.

[0058] In a specific implementation manner, as Figure 2 shown, along the direction perpendicular to the process gas flow, the length dimension of the through-hole 211 is L1, the width dimension of the through-hole 211 is L2, and L1 and L2 satisfy 0.025 ≤ L2 / L1 ≤ 0.15, L1 satisfies 200 mm ≤ L1 ≤ 400 mm, and L2 satisfies 10 mm ≤ L2 ≤ 30 mm.

[0059] In the embodiments of the present application, the ratio L2 / L1 of the width dimension to the length dimension of the through-hole 211 can specifically be 0.03, 0.035, 0.04, 0.045, 0.05, 0.055, 0.06, 0.065, 0.07, 0.075, 0.08, 0.085, 0.09, 0.095, 0.1, 0.105, 0.11, 0.115, 0.12, 0.125, 0.13, 0.135, 0.14, 0.145, 0.15, etc.

[0060] When 0.025 ≤ L2 / L1 ≤ 0.15, the through-hole 211 has a strip-shaped cross-sectional area for fluid flow, enabling the deposition of nanoparticles on the substrate 4 to be more concentrated and having a larger deposition area, which is beneficial to improving the deposition efficiency. At the same time, the inner wall of the through-hole 211 has a large surface area, facilitating heat dissipation, thereby improving the stability and reliability of the target 21 during operation, reducing the possibility of damage to the target 21 due to excessive temperature, and further increasing the service life of the target 21.

[0061] The length dimension L1 of the through-hole 211 can specifically be 200 mm, 210 mm, 220 mm, 230 mm, 240 mm, 250 mm, 260 mm, 270 mm, 280 mm, 290 mm, 300 mm, 310 mm, 320 mm, 330 mm, 340 mm, 350 mm, 360 mm, 370 mm, 380 mm, 390 mm, 400 mm, etc.

[0062] When 200 mm ≤ L1 ≤ 400 mm, the length dimension of the through-hole 211 is appropriate, so that the through-hole 211 has a large cross-sectional area for fluid flow, thereby being able to effectively improve the uniformity of the plasma distribution in the through-hole 211, optimize the fluidity of the process gas, enhance the heat dissipation performance of the target 21, and improve the deposition efficiency of the nanoparticles and the quality of the nanoparticle layer on the substrate 4 to meet the deposition requirements for a large-area nanoparticle layer or nanoparticles.

[0063] The width dimension L2 of the through-hole 211 can specifically be 10 mm, 11 mm, 12 mm, 13 mm, 14 mm, 15 mm, 16 mm, 17 mm, 18 mm, 19 mm, 20 mm, 21 mm, 22 mm, 23 mm, 24 mm, 25 mm, 26 mm, 27 mm, 28 mm, 29 mm, 30 mm, etc.

[0064] When 10 mm ≤ L2 ≤ 30 mm, the width dimension of the through-hole 211 is appropriate, so that the through-hole 211 has a large cross-sectional area for fluid flow, thereby being able to effectively improve the uniformity of the plasma distribution in the through-hole 211, optimize the fluidity of the process gas, enhance the heat dissipation performance of the target 21, and improve the deposition efficiency of the nanoparticles and the quality of the nanoparticle layer on the substrate 4 to meet the deposition requirements for a large-area nanoparticle layer or nanoparticles.

[0065] In a specific embodiment, as Figure 2 shown, along the direction perpendicular to the flow direction of the process gas, the thickness of the target 21 is H, and 5 mm ≤ H ≤ 10 mm.

[0066] In the embodiments of the present application, the thickness H of the target 21 may specifically be 5 mm, 5.2 mm, 5.4 mm, 5.6 mm, 5.8 mm, 6 mm, 6.2 mm, 6.4 mm, 6.6 mm, 6.8 mm, 7 mm, 7.2 mm, 7.4 mm, 7.6 mm, 7.8 mm, 8 mm, 8.2 mm, 8.4 mm, 8.6 mm, 8.8 mm, 9 mm, 9.2 mm, 9.4 mm, 9.6 mm, 9.8 mm, 10 mm, etc.

[0067] When the thickness of the target 21 is too thin (for example, H < 5 mm), the too-thin target 21 will be consumed in a relatively short time, so that the staff needs to replace it frequently, resulting in a reduction in the deposition efficiency of the nanoparticles and the production efficiency of the nanoparticle layer. Moreover, during the sputtering process, as the thickness of the target 21 gradually decreases, its geometric shape is likely to change, resulting in an impact on the uniformity of the nanoparticle layer.

[0068] When the thickness of the target 21 is too thick (for example, H > 10 mm), the too-thick target 21 requires more raw materials, which will not only increase the production cost, but also increase the weight of the target 21, making the components for supporting the hollow cathode 2 in the deposition device prone to deformation or increased wear.

[0069] When the thickness of the target 21 satisfies 5 mm ≤ H ≤ 10 mm, the thickness and weight of the target 21 are appropriate, so that the target 21 can last for a relatively long time during the working process, thereby reducing the number of times of replacing the target 21 during downtime, which is beneficial to improving the production efficiency. Moreover, for the target 21 made of expensive materials, it can also reduce the production cost and avoid waste of resources.

[0070] In a specific embodiment, as Figure 3 shown, along the direction of the process gas flow, the depth of the through hole 211 is D, and D satisfies D ≥ 2×λ, where λ is the mean free path of the gas.

[0071] In the embodiments of the present application, through such a design method, not only can the movement path of the process gas in the through hole 211 be extended, but also the uniformity of the diffusion of the process gas in the through hole 211 can be improved, so that the process gas flowing into the through hole 211 can be fully ionized, thereby increasing the frequency of effective collisions between ions, enabling more ions to bombard the target 21 under the dual action of mutual collision and electric field, and further improving the sputtering efficiency of the surface of the target 21 and the deposition efficiency of the surface of the substrate 4.

[0072] In a possible implementation, D satisfies 20 mm ≤ D ≤ 100 mm, and the depth D of the through hole 211 can specifically be 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, 45 mm, 50 mm, 55 mm, 60 mm, 65 mm, 70 mm, 75 mm, 80 mm, 85 mm, 90 mm, 95 mm, 100 mm, etc.

[0073] In a specific implementation, as Figure 1 and Figure 3 shown, the deposition device further includes a magnetic pole assembly 22 and a second power supply 5. The magnetic pole assembly 22 is sleeved on the outer wall of the hollow cathode 2, and the second power supply 5 is connected to the magnetic pole assembly 22 for generating a magnetic field in the through hole 211.

[0074] In the embodiment of the present application, the magnetic pole assembly 22 is sleeved on the outer wall of the hollow cathode 2 and connected to the second power supply 5 for generating a magnetic field in the through hole 211, so that the ionized ions and electrons can move together under the action of the electric field and the magnetic field, thereby further increasing the frequency of effective collisions between plasmas, and further improving the sputtering efficiency of the surface of the target 21 and the deposition efficiency of the surface of the substrate 4.

[0075] Specifically, after the magnetic pole assembly 22 is connected to the second power supply 5, a magnetic field parallel to the axis direction of the through hole 211 can be generated in the through hole 211. When the process gas is ionized into positively charged process gas ions and negatively charged process gas electrons in the through hole 211, the process gas electrons will move in a spiral along the magnetic force lines under the action of the magnetic field to collide with the molecules and atoms of the process gas, so as to generate more process gas ions and process gas electrons, which is beneficial to improving the ionization rate of the process gas to increase the density of the plasma, thereby further promoting the deposition efficiency of the nanoparticles. At the same time, the process gas ions will accelerate towards the direction close to the inner wall of the through hole 211 under the action of the electric field to bombard the surface of the target 21, so that the molecules and atoms on the surface of the target 21 are sputtered out and further ionized into positively charged target ions and negatively charged target electrons under the action of the electric field. The target electrons will also move in a spiral along the magnetic force lines under the action of the magnetic field to collide with the molecules and atoms of the process gas, which is beneficial to further improving the ionization rate of the process gas.

[0076] In a possible implementation, the magnetic pole assembly 22 can be an integrally formed magnet or can be spliced by a plurality of segmented magnets. In other implementations, an axial magnetic field can also be generated in the through hole 211 by winding a current-carrying wire around the outer wall of the hollow cathode 2.

[0077] In a specific implementation, as Figure 2As shown, along the direction of process gas flow, the magnetic induction intensity at the axis of the through hole 211 is B, and B satisfies 200 Gs ≤ B ≤ 500 Gs.

[0078] In the embodiment of the present application, the magnetic induction intensity B at the axis of the through hole 211 can specifically be 200 Gs, 210 Gs, 220 Gs, 230 Gs, 240 Gs, 250 Gs, 260 Gs, 270 Gs, 280 Gs, 290 Gs, 300 Gs, 310 Gs, 320 Gs, 330 Gs, 340 Gs, 350 Gs, 360 Gs, 370 Gs, 380 Gs, 390 Gs, 400 Gs, 410 Gs, 420 Gs, 430 Gs, 440 Gs, 450 Gs, 460 Gs, 470 Gs, 480 Gs, 490 Gs, 500 Gs, etc.

[0079] When the magnetic induction intensity at the axis of the through hole 211 is too small (for example, B < 200 Gs), the magnetic field cannot effectively confine the ionized ions and electrons, making it impossible for the ions and electrons to collide effectively with the process gas, resulting in a decrease in the ionization rate of the process gas, thereby affecting the sputtering efficiency of the surface of the target 21, and further reducing the deposition efficiency of the nanoparticles.

[0080] When the magnetic induction intensity at the axis of the through hole 211 is too large (for example, B > 500 Gs), the magnetic field can strongly confine the ionized ions and electrons, making it impossible for the ions and electrons to collide effectively with the process gas, resulting in a decrease in the ionization rate of the process gas. And too large a magnetic induction intensity will also cause the temperature of the magnetic pole assembly 22 to rise, which is likely to damage the target 21.

[0081] When the magnetic induction intensity at the axis of the through hole 211 satisfies 200 Gs ≤ B ≤ 500 Gs, the appropriate magnetic induction intensity can effectively confine the electrons to increase the collision frequency between the electrons and the molecules and atoms of the process gas, thereby improving the ionization rate of the process gas, increasing the plasma density in the through hole 211, and improving the sputtering efficiency of the surface of the target 21. At the same time, the heat generated by the magnetic pole assembly 22 cannot damage the target 21 in a short time, which is beneficial to improving the stability and reliability of the deposition device during operation.

[0082] In a possible implementation manner, the first power supply 3 connected to the target 21 is a variable power supply, and the second power supply 5 connected to the magnetic pole assembly 22 is a constant power supply.

[0083] In the embodiment of the present application, the first power supply 3 can instantaneously generate a strong electric field in the through hole 211, which is used to quickly ionize the process gas, and enable the process gas ions to accelerate and bombard the target 21. After a preset time, the electric field intensity in the through hole 211 can be instantaneously decreased, avoiding the risk of damage to the target 21 due to excessive working temperature, which is beneficial to improving the service life of the target 21, ensuring that the deposition device can continuously work, and thus improving the stability and reliability of the deposition device during operation. At the same time, the second power supply 5 can continuously generate a stable magnetic field in the through hole 211, which is used to confine the movement of electrons in the through hole 211, so that the electrons can repeatedly collide with the molecules and atoms of the process gas to improve the ionization rate of the process gas.

[0084] Specifically, the first power supply 3 can be one of a DC power supply, a radio frequency power supply, and a high-energy pulse power supply, and the second power supply 5 can be a DC power supply.

[0085] When the first power supply 3 is a high-energy pulse power supply, the pulse shape can be one of a triangle, a rectangle, and a trapezoid.

[0086] When the first power supply 3 is a high-energy pulse power supply, the pulse frequency f satisfies 100hz ≤ f ≤ 2000hz, and the application time t satisfies 10μs ≤ t ≤ 500μs.

[0087] Among them, the pulse frequency f can specifically be 100hz, 150hz, 200hz, 2500hz, 300hz, 350hz, 400hz, 450hz, 500hz, 550hz, 600hz, 650hz, 700hz, 750hz, 800hz, 850hz, 900hz, 950hz, 1000hz, 1050hz, 1100hz, 1150hz, 1200hz, 1250hz, 1300hz, 1350hz, 1400hz, 1450hz, 1500hz, 1550hz, 1600hz, 1650hz, 1700hz, 1750hz, 1800hz, 1850hz, 1900hz, 1950hz, 2000hz, etc.

[0088] Among them, the application time t can specifically be 10 μs, 20 μs, 30 μs, 40 μs, 50 μs, 60 μs, 70 μs, 80 μs, 90 μs, 100 μs, 110 μs, 120 μs, 130 μs, 140 μs, 150 μs, 160 μs, 170 μs, 180 μs, 190 μs, 200 μs, 210 μs, 220 μs, 230 μs, 240 μs, 250 μs, 260 μs, 270 μs, 280 μs, 290 μs, 300 μs, 310 μs, 320 μs, 330 μs, 340 μs, 350 μs, 360 μs, 370 μs, 380 μs, 390 μs, 400 μs, 410 μs, 420 μs, 430 μs, 440 μs, 450 μs, 460 μs, 470 μs, 480 μs, 490 μs, 500 μs, etc.

[0089] Specifically, the power density of the first power supply 3 is P, and P satisfies P ≥ 5 w / cm². Among them, the power density of the first power supply 3 can specifically be 5 w / cm², 7 w / cm², 9 w / cm², 11 w / cm², 13 w / cm², 15 w / cm², 17 w / cm², 19 w / cm², 21 w / cm², 23 w / cm², 25 w / cm², 27 w / cm², 29 w / cm², 31 w / cm², 33 w / cm², 35 w / cm², 37 w / cm², 39 w / cm², etc.

[0090] In a specific embodiment, as Figure 1 and Figure 2 shown, the hollow cathode 2 further includes a cooling device 23. The cooling device 23 is sleeved on the outer wall of the target 21, and the cooling device 23 is provided with a coolant inlet 231 and a coolant outlet 232. Along the direction perpendicular to the flow direction of the process gas, the coolant inlet 231 and the coolant outlet 232 are centrosymmetric with respect to the axis of the through hole 211 (that is, along the length direction and the width direction of the through hole 211, the coolant inlet 231 and the coolant outlet 232 are arranged on both sides of the through hole 211 and are symmetrically distributed with respect to the axis of the through hole 211). Among them, Figure 1 the hollow cathode 2 in

[0091] is shown in a sectional view.

[0092] At the same time, by arranging the coolant inlet 231 and the coolant outlet 232 symmetrically relative to the axial center of the through hole 211 in a direction perpendicular to the flow of the process gas, the possibility of local overcooling or local overheating of the target material 21 can be reduced, and the uniformity of the distribution of the coolant in the cooling device 23 can be improved, which is beneficial to improving the cooling effect of the target material 21.

[0093] Specifically, Figure 2 As shown, along the height direction of the hollow cathode 2 (i.e., the length direction of the through hole 211), the coolant inlet 231 is located at the lower end of the axis of the through hole 211, and the coolant outlet 232 is located above the axis of the through hole 211, so that the coolant flows in from one end of the hollow cathode 2 and then flows out from the other end of the hollow cathode 2. Through such a design, the coolant can rise naturally after flowing into the cooling device 23, so that the natural convection effect driven by the temperature difference can be used to make the coolant more evenly distributed in the cooling device 23, which is conducive to improving the effect of cooling the target material 21.

[0094] At the same time, the coolant inlet 231 is arranged below the axis of the through hole 211, so that the coolant can discharge the air in the cooling device 23 during the flow, so as to reduce the possibility of bubbles being trapped inside the cooling device 23 and forming an obstruction, thereby enabling the coolant to fully exchange heat with the surface of the target material 21, which is beneficial to improving the heat exchange efficiency.

[0095] In a specific embodiment, Figure 1 As shown, the deposition device further comprises a heating device 6 . Along the flow direction of the process gas, the heating device 6 is located on a side of the substrate 4 away from the hollow cathode 2 and is spaced apart from the substrate 4 .

[0096] In the embodiment of the present application, the heating device 6 is used to heat the substrate 4 so as to accelerate the nucleation and growth process of the deposits deposited on the surface of the substrate 4, thereby increasing the forming speed of the nanoparticle layer and further increasing the processing efficiency. At the same time, properly heating the substrate 4 can not only increase the adhesion between the nanoparticle layer and the substrate 4, but also reduce the defects of the nanoparticle layer during the forming process, thereby improving the stability and reliability of product quality.

[0097] In a specific embodiment, Figure 1 As shown, the deposition device further includes a moving device, and the substrate 4 is mounted on the moving device, which is used to drive the substrate 4 to move along a direction perpendicular to the flow direction of the process gas.

[0098] In the embodiments of the present application, the mobile device can drive the substrate 4 to move relative to the hollow cathode 2 along a direction perpendicular to the flow direction of the process gas, so as to improve the uniformity of the distribution of nanoparticles on the surface of the substrate 4 during the deposition process. Moreover, when the heating device 6 heats the substrate 4, it can also avoid the risk of local overheating of the substrate 4, which is beneficial to further improving the quality of the nanoparticle layer. At the same time, during the co-deposition of multiple groups of materials, driving the substrate 4 to move by the mobile device is also beneficial to mixing different raw materials, thereby enabling the uniform distribution of multiple groups of materials on the same nanoparticle layer, and also enabling the gradient design of multiple groups of materials on the same nanoparticle layer, and further meeting different deposition requirements.

[0099] In a specific embodiment, as Figure 1 shown, the deposition device further includes a body 1. The body 1 is provided with a first accommodation cavity 11, a first air inlet 12 and a second air inlet 13 communicating with the first accommodation cavity 11. The first accommodation cavity 11 is used to accommodate the hollow cathode 2 and the substrate 4. Along the flow direction of the process gas, the first air inlet 12 is located on the side of the hollow cathode 2 facing away from the substrate 4 and is used to transport the process gas, and the second air inlet 13 is located between the hollow cathode 2 and the substrate 4 and is used to transport the reaction gas.

[0100] In the embodiments of the present application, the body 1 is provided with a first accommodation cavity 11. The above-mentioned hollow cathode 2, substrate 4, heating device 6 and mobile device can all be placed in the first accommodation cavity 11, and the hollow cathode 2, substrate 4 and heating device 6 can be spaced apart along the flow direction of the process gas.

[0101] Among them, the body 1 is further provided with a first air inlet 2. The first air inlet 12 is arranged on the side of the hollow cathode 2 facing away from the substrate 4 and is used to transport the process gas into the first accommodation cavity 11, so that the process gas is ionized and bombards the target 21, causing the ions of the target 21 to coagulate with each other to form nanoparticles and finally deposit on the substrate 4.

[0102] At the same time, the body 1 is further provided with a second air inlet 13. The second air inlet 13 is arranged between the hollow cathode 2 and the substrate 4 and is used to transport the reaction gas into the first accommodation cavity 11, so that the reaction gas combines with the nanoparticles moving towards the substrate 4, thereby changing the material and properties of the nanoparticle layer. For example, after introducing the reaction gas, the nanoparticle layer deposited on the surface of the substrate 4 can be a metal oxide, a nitride, a carbide, etc., so as to meet different deposition requirements.

[0103] Specifically, the process gas is one or more of argon, oxygen, nitrogen and acetylene, and the reaction gas is one or more of hydrogen, oxygen, nitrogen and acetylene.

[0104] In addition, by disposing the second air inlet 13 between the hollow cathode 2 and the substrate 4, it is also possible to prevent the reaction gas from affecting the reaction in the through hole 211, which is beneficial to improving the stability of the formation of the specific nanoparticle layer.

[0105] In a possible implementation, as Figure 1 shown, the deposition device further includes an isolation cover 7. The isolation cover 7 includes a second accommodation cavity 71, and a third air inlet 72 and a first air outlet 73 that communicate with the second accommodation cavity 71.

[0106] In the embodiment of the present application, the isolation cover 7 is sleeved outside the hollow cathode 2, so that the hollow cathode 2 is located in the second accommodation cavity 71. And along the flowing direction of the process gas, the projections of the first air inlet 12, the third air inlet 72, the through hole 211 and the first air outlet 73 at least partially overlap, and the second air inlet 13 can communicate with the second accommodation cavity 71 and is located between the output end of the through hole 211 and the first air outlet 73. So that after the process gas flows into the first accommodation cavity 11, it can directly flow into the through hole 211 through the third air inlet 72 and be ionized. At the same time, it enables the nanoparticles to directly combine with the reaction gas after flowing out of the through hole 211 and be deposited on the surface of the substrate 4 through the first air outlet 73.

[0107] In addition, the isolation cover 7 can also prevent the plasma and harmful by-products from diffusing into the surrounding environment, which is beneficial to improving the safety of the working environment. It can also precisely control the pressure in the second accommodation cavity 71 through the isolation cover 7 to provide stable reaction conditions, and can also reduce energy loss, improve the deposition efficiency and the utilization rate of the target 21.

[0108] In a possible implementation, as Figure 1 shown, the deposition device further includes a vacuum pump 8. The machine body 1 is also provided with a second air outlet 14 that communicates with the first accommodation cavity 11, and the vacuum pump 8 is disposed on the side of the second air outlet 14 away from the first accommodation cavity 11.

[0109] In the embodiment of the present application, the vacuum pump 8 can extract the air and other impurity gases in the first accommodation cavity 11 through the second air outlet 14, so that the first accommodation cavity 11 is in a low-pressure environment, which is beneficial to increasing the mean free path of the gas, increasing the collision frequency of ions in the through hole 211, and thus being beneficial to improving the deposition efficiency of the nanoparticles. At the same time, the vacuum pump 8 can also discharge the by-product gases generated during the deposition process to reduce the influence of these gases on the deposition process and ensure the quality of the nanoparticle layer.

[0110] In summary, during the operation of the deposition device, after the air and other impurity gases in the first accommodation chamber 11 are pumped out of the body 1 through the vacuum pump 8 via the second air outlet 14, process gas is then supplied into the first accommodation chamber 11 through the first air inlet 12. And during the flow of the process gas, it first flows into the second accommodation chamber 71 of the isolation cover 7 through the third air inlet 72, and then flows into the through hole 211 of the hollow cathode 2 for reaction to form nanoparticles. After the nanoparticles flow out of the through hole 211, they can flow out of the second accommodation chamber 71 through the first air outlet 73 and be deposited on the surface of the substrate 4 to form a nanoparticle coating.

[0111] Meanwhile, during the flow of the process gas, reaction gas can also be supplied into the second accommodation chamber 71 through the second air inlet 13, so that the reaction gas can combine with the nanoparticles flowing out of the through hole 211 and then jointly flow out of the second accommodation chamber 71 through the first air outlet 73 and be deposited on the surface of the substrate 4 to form a nanoparticle coating.

[0112] The structure, features and effects of the present application have been described in detail based on the embodiments shown in the drawings above. The above is only the preferred embodiment of the present application, but the present application is not limited to the scope defined by the drawings. Any changes made according to the concept of the present application, or equivalent embodiments modified into equivalent changes, still within the spirit covered by the specification and the drawings, shall be within the protection scope of the present application.

Claims

1. A deposition device, characterized in that: The deposition device comprises: A hollow cathode having a through hole for flowing a process gas; a first power source, the first power source being electrically connected to the hollow cathode and configured to generate an electric field in the through hole; A substrate, wherein along the direction of flow of the process gas, the substrate and the output end of the hollow cathode are spaced apart from each other, and the projection of the through hole is located within the projection range of the substrate; Wherein, the hollow cathode comprises a target material, the target material is provided with the through hole, and along the flow direction of the process gas, the cross-sectional shape of the through hole is a strip structure.

2. The deposition device according to claim 1, characterized in that: Along a flow direction perpendicular to the process gas, the length dimension of the through hole is L1, the width dimension of the through hole is L2, and L1 and L2 satisfy 0.025≤L2 / L1≤0.15, L1 satisfies 200mm≤L1≤400mm, and L2 satisfies 10mm≤L2≤30mm.

3. The deposition device according to claim 1, characterized in that: Along a direction perpendicular to the flow direction of the process gas, the thickness of the target material is H, and H satisfies 5mm≤H≤10mm.

4. The deposition device according to claim 1, characterized in that: Along the flow direction of the process gas, the depth of the through hole is D, and D satisfies D≥2×λ, where λ is the mean free path of the gas.

5. The deposition device according to any one of claims 1 to 4, characterized in that: The deposition device also includes a magnetic pole assembly and a second power supply. The magnetic pole assembly is sleeved on the outer wall of the hollow cathode. The second power supply is electrically connected to the magnetic pole assembly and is used to generate a magnetic field in the through hole.

6. The deposition device according to claim 5, characterized in that: Along the flow direction of the process gas, the magnetic induction intensity at the axis of the through hole is B, and B satisfies 200Gs≤B≤500Gs.

7. The deposition device according to any one of claims 1 to 4, characterized in that: The hollow cathode also includes a cooling device, which is sleeved on the outer wall of the target material and is provided with a coolant inlet and a coolant outlet. The coolant inlet and the coolant outlet are symmetrical relative to the axis center of the through hole along a flow direction perpendicular to the process gas.

8. The deposition device according to any one of claims 1 to 4, characterized in that: The deposition device further comprises a heating device, which is located on a side of the substrate away from the hollow cathode along the flow direction of the process gas and is spaced apart from the substrate.

9. The deposition device according to any one of claims 1 to 4, characterized in that: The deposition device further comprises a moving device, and the substrate is mounted on the moving device for driving the substrate to move in a direction perpendicular to the flow of the process gas.

10. The deposition device according to any one of claims 1 to 4, characterized in that: The deposition device also includes a body, which is provided with a first accommodating chamber and a first gas inlet and a second gas inlet connected to the first accommodating chamber. The first accommodating chamber is used to accommodate the hollow cathode and the substrate. Along the direction of flow of the process gas, the first gas inlet is located on the side of the hollow cathode away from the substrate and is used to transport the process gas. The second gas inlet is located between the hollow cathode and the substrate and is used to transport the reaction gas.

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