Solar cell, laminated cell, photovoltaic system, power generation device, and power utilization device

Abstract

The utility model provides a solar cell, a laminated cell, a photovoltaic system, a power generation device and a power utilization device. In the perovskite solar cell, through the arrangement of the conductive enhancement layer comprising the plurality of first metal gate lines which are arranged at intervals, the transmission of charges in the cell can be promoted, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, and in particular to a solar cell, a stacked cell, a photovoltaic system, a power generation device, and an electrical device. Background Art

[0002] The statements herein merely provide background information related to the present application and do not necessarily constitute prior art.

[0003] Solar cells can convert solar energy into electrical energy, which has the advantage of being more environmentally friendly. In the structure of solar cells, the photoelectric conversion efficiency of cells made of traditional transparent conductive glass electrodes is low. Utility Model Content

[0004] The present application provides a solar cell, comprising a functional layer; the functional layer comprises a first electrode layer, a perovskite layer and a second electrode layer stacked in sequence; a first scribe groove is provided in the functional layer, the first scribe groove penetrates the second electrode layer to separate the second electrode layer into a plurality of second electrode sublayers, and the first scribe groove divides the functional layer into a plurality of functional sublayers; a second scribe groove is provided in the functional sublayer, the second scribe groove penetrates the perovskite layer, and separates the perovskite layer in the functional sublayer into an effective area and an ineffective area; a conductive enhancement layer is further provided in the functional sublayer, and the conductive enhancement layer is located on at least one side of the second electrode sublayer; the conductive enhancement layer comprises a plurality of first metal grid lines arranged at intervals, and the plurality of first metal grid lines are located in the effective area.

[0005] In the above solar cell, the provision of a conductive enhancement layer including a plurality of first metal grid lines arranged at intervals can promote the transmission of charges inside the cell and improve the photoelectric conversion efficiency of the perovskite solar cell.

[0006] In some embodiments, a groove bottom and a groove wall of the second scribe groove are covered with the second electrode sublayer.

[0007] In some embodiments, the width of the first metal grid line is 0.001 mm to 10 mm. Within this range, the first metal grid line can further reduce the projection area of ​​the first metal grid line on the perovskite sublayer while exerting good conductivity, so that sunlight can pass through the solar cell with higher transmittance.

[0008] In some embodiments, the thickness of the first metal gate line is 50 nm to 200 nm. The thickness of the first metal gate line within this range can make the first metal gate line have a relatively suitable resistance, and promote the transmission of charges in the perovskite battery on the basis of making the first metal gate line have good strength.

[0009] In some embodiments, the distance between adjacent first metal grid lines is 0.1 mm to 30 mm. Within this range, the distance between adjacent first metal grid lines can further reduce the projection area of ​​the first metal grid lines on the perovskite sublayer on the basis of exerting good conductive performance, so that sunlight can pass through the solar cell with a higher transmittance.

[0010] In some embodiments, the first metal grid line intersects with the scribing direction of the second scribing groove, so that the projection area of ​​the first metal grid line on the perovskite sub-layer can be smaller, which is beneficial to improve the transmittance of sunlight.

[0011] In some embodiments, the first metal grid line is perpendicular to the scribing direction of the second scribing groove, which can further reduce the projection area of ​​the first metal grid line on the perovskite sub-layer and improve the transmittance of sunlight.

[0012] In some embodiments, the conductive enhancement layer further includes a plurality of second metal gate lines disposed at intervals and a plurality of third metal gate lines disposed at intervals, the plurality of second metal gate lines are located at the bottom of the second scribe groove, the plurality of third metal gate lines are located at the groove wall of the second scribe groove, and the plurality of second metal gate lines are connected to the plurality of first metal gate lines in a one-to-one correspondence through the plurality of third metal gate lines. By providing the second metal gate lines and the third metal gate lines correspondingly connected to the first metal gate lines, it is beneficial to promote the smooth transmission of charges.

[0013] In some embodiments, an angle between the second metal gate line and a scribing direction of the second scribing groove is greater than 0° and less than or equal to 90°.

[0014] In some embodiments, the width of the second metal grid line is 0.001 mm to 10 mm. Within this range, the second metal grid line can reduce the projected area of ​​the second metal grid line on the perovskite sublayer while exerting good conductivity, so that sunlight can pass through the solar cell with higher transmittance.

[0015] In some embodiments, the thickness of the second metal gate line is 50 nm to 200 nm. The thickness of the second metal gate line within this range can make the second metal gate line have good strength.

[0016] In some embodiments, the distance between adjacent second metal grid lines is 0.1 mm to 30 mm. Within this range, the distance between adjacent second metal grid lines can reduce the projection area of ​​the second metal grid lines on the perovskite sublayer while exerting good conductivity, so that sunlight can pass through the solar cell with a higher transmittance.

[0017] In some embodiments, an angle between the third metal gate line and the bottom of the second scribe groove is greater than 0° and less than or equal to 90°.

[0018] In some embodiments, the width of the third metal gate line is 0.001 mm to 10 mm. Within this range, the third metal gate line can have good conductive properties and be easily connected to the first metal gate line and the second metal gate line.

[0019] In some embodiments, the thickness of the third metal gate line is 50 nm to 200 nm. The thickness of the third metal gate line within this range can make the third metal gate line have good strength.

[0020] In some embodiments, the distance between adjacent third metal gate lines is 0.1 mm to 30 mm. Within this range, the distance between adjacent third metal gate lines can provide good conductivity and facilitate stable connection with the first metal gate line and the second metal gate line.

[0021] In some embodiments, the conductive enhancement layer further includes a metal layer and a plurality of fourth metal grid lines arranged at intervals, the metal layer covers the bottom of the second scribe groove, the plurality of fourth metal grid lines are located on the groove wall of the second scribe groove, the plurality of fourth metal grid lines correspond to the plurality of first metal grid lines one by one, and the metal layer is connected to the first metal grid lines through the fourth metal grid lines. By arranging the metal layer to cover the bottom of the second scribe groove, the contact resistance generated by the second scribe groove can be reduced, which is conducive to promoting the improvement of the performance of the solar cell.

[0022] In some embodiments, the thickness of the metal layer is 50 nm to 200 nm. The thickness of the metal layer within this range can make the metal layer have good strength.

[0023] In some embodiments, an angle between the fourth metal gate line and the bottom of the second scribe groove is greater than 0° and less than or equal to 90°.

[0024] In some embodiments, the width of the fourth metal grid line is 0.001 mm to 10 mm. Within this range, the width of the fourth metal grid line can provide good conductive performance and facilitate stable connection with the first metal grid line.

[0025] In some embodiments, the thickness of the fourth metal gate line is 50 nm to 200 nm. The thickness of the fourth metal gate line within this range can make the fourth metal gate line have good strength.

[0026] In some embodiments, the distance between adjacent fourth metal grid lines is 0.1 mm to 30 mm. Within this range, the distance between adjacent fourth metal grid lines can facilitate stable connection with the first metal grid lines while achieving good conductive performance.

[0027] In some embodiments, a third scribe groove is further provided in the functional sublayer, and the third scribe groove penetrates the first electrode layer. The third scribe groove separates the first electrode layer into a plurality of first electrode sublayers, and the effective area spans two adjacent first electrode sublayers.

[0028] In some embodiments, the functional layer further includes a charge transport layer, and the charge transport layer includes a hole transport layer and an electron transport layer; one of the hole transport layer and the electron transport layer is located between the first electrode layer and the perovskite layer, and the other is located between the perovskite layer and the second electrode layer.

[0029] In some embodiments, the solar cell further includes an encapsulation layer; the encapsulation layer is located on a surface of the second electrode layer away from the perovskite layer, and the encapsulation layer fills at least a portion of the first scribe groove and at least a portion of the second scribe groove.

[0030] In some embodiments, the conductivity enhancement layer is located between the second electrode sublayer and the perovskite layer.

[0031] In some embodiments, a charge transport layer is provided between the second electrode sublayer and the perovskite layer, and the conductivity enhancement layer is located between the second electrode sublayer and the charge transport layer.

[0032] A stacked cell comprises a top cell and a bottom cell which are stacked; the top cell comprises the solar cell.

[0033] In some embodiments, the solar cell further comprises a transparent substrate, the transparent substrate is located on a surface of the first electrode layer away from the perovskite layer, and the transparent substrate is further away from the bottom cell than the functional layer. By introducing the above solar cell into the stacked cell, sunlight can be transmitted through the perovskite solar cell with a greater transmittance, so that the bottom cell can receive more sunlight, thereby improving the efficiency of the stacked cell.

[0034] In some embodiments, the bottom cell comprises a silicon-based solar cell.

[0035] A photovoltaic system comprises at least one of the solar cell and the stacked cell.

[0036] A power generation device comprises at least one of the solar cell and the stacked cell.

[0037] An electrical device comprises at least one of the solar cell and the stacked cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings used in the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on the drawings without creative work.

[0039] Figure 1 Schematic diagram of the structure of a solar cell in one embodiment of the present application.

[0040] Figure 2 for Figure 1 Top view of the corresponding solar cell.

[0041] Figure 3 FIG. 1 is a top view of a solar cell in another embodiment of the present application.

[0042] Figure 4 This is a top view of a solar cell in another embodiment of the present application.

[0043] Figure 5 This is a schematic structural diagram of a solar cell in another embodiment of the present application.

[0044] Description of the markings in the figure:

[0045] 10. Solar cell; 101. Substrate; 102. Functional layer; 1021. First electrode layer; 1022. Perovskite layer; 1023. Second electrode layer; 1024. First scribe groove; 1025. Functional sublayer; 10251. Effective area; 10252. Ineffective area; 10253. Conductive enhancement layer; 10254. First metal grid line; 10255. Second metal grid line; 10256. Third scribe groove; 10257. Metal layer; 1026. Second scribe groove; 1027. Hole transport layer; 1028. Electron transport layer; 103. Encapsulation layer.

[0046] In order to better describe and illustrate the embodiments and / or examples of the utility models disclosed herein, reference may be made to one or more drawings. The additional details or examples used to describe the drawings should not be considered as limiting the scope of any of the disclosed utility models, the embodiments and / or examples currently described, and the best modes of these utility models currently understood. DETAILED DESCRIPTION

[0047] Some embodiments of the present application are disclosed in detail below with appropriate reference to the drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there may be cases where detailed descriptions of well-known matters and repeated descriptions of actually the same structure are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0048] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0050] The "range" disclosed in the present application is defined in the form of a lower limit and an upper limit, and a given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of the particular range. The range defined in this way can be inclusive or exclusive of the end values, and can be arbitrarily combined, that is, any lower limit can be combined with any upper limit to form a range. For example, if a range of 60 to 120 and 80 to 110 is listed for a particular parameter, it is understood that a range of 60 to 110 and 80 to 120 is also expected. In addition, if the minimum range values ​​1 and 2 are listed, and if the maximum range values ​​3, 4 and 5 are listed, the following ranges can all be expected: 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4 and 2 to 5. In the present application, unless otherwise specified, the numerical range "a to b" represents an abbreviation of any real number combination between a and b, where a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations. In addition, when a parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0051] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0052] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0053] If not otherwise specified, all steps of the present application may be performed sequentially or randomly, and in some embodiments are performed sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0054] If there is no special explanation, the "include" and "comprising" mentioned in this application are open-ended or closed-ended. For example, the "include" and "comprising" may mean that other components not listed may also be included or only the listed components may be included or only the listed components may be included.

[0055] If not specifically stated, in this application, the term "or" is inclusive. For example, the phrase "M or N" means "M, N, or both M and N". More specifically, any of the following conditions satisfies the condition "M or N": M is true or exists, and N is false or does not exist; M is false or does not exist, and M is true or exists; or both M and N are true, or both M and N exist.

[0056] If not otherwise specified, in the present application, the term "room temperature" generally refers to 4°C to 30°C, preferably 25±5°C.

[0057] Unless otherwise stated, the terms used in this application have the well-known meanings commonly understood by those skilled in the art. Unless otherwise stated, the numerical values ​​of the parameters mentioned in this application can be measured using various measurement methods commonly used in the art. For example, the test can be performed according to the method provided in the examples of this application.

[0058] See also Figure 1In one embodiment of the present application, a solar cell 10 is provided. The solar cell 10 includes a functional layer 102. The functional layer 102 includes a first electrode layer 1021, a perovskite layer 1022, and a second electrode layer 1023, which are stacked in sequence. A first scribe groove 1024 is provided in the functional layer 102, and the first scribe groove 1024 penetrates the second electrode layer 1023 to separate the second electrode layer 1023 into a plurality of second electrode sublayers, and the first scribe groove 1024 divides the functional layer 102 into a plurality of functional sublayers 1025. A second scribe groove 1026 is provided in the functional sublayer 1025, and the second scribe groove 1026 penetrates the perovskite layer 1022 and separates the perovskite layer 1022 in the functional sublayer 1025 into an effective area 10251 and an ineffective area 10252. A conductive enhancement layer 10253 is also provided in the functional sublayer 1025, and the conductive enhancement layer 10253 is located on at least one side of the second electrode sublayer. The conductive enhancement layer 10253 includes a plurality of first metal gate lines 10254 that are spaced apart from each other, and the plurality of first metal gate lines 10254 are located in the active area 10251 .

[0059] It is understandable that, for the sake of clarity, Figure 1 In FIG. 1 , the functional sublayer 1025 is marked with a dotted box.

[0060] It can be understood that the effective area 10251 includes the effective power generation area, and the invalid area 10252 is part of the dead zone.

[0061] In the solar cell 10 of this embodiment, by disposing a conductive enhancement layer 10253 including a plurality of first metal grid lines 10254 disposed at intervals, the conductivity of the battery can be improved, the transfer of charges inside the battery can be promoted, and the photoelectric conversion efficiency of the solar cell 10 can be improved.

[0062] Furthermore, the conductive enhancement layer 10253 includes a plurality of first metal grid lines 10254 arranged at intervals, so that sunlight can pass through between adjacent first metal grid lines 10254, thereby improving the transmittance of sunlight. When the solar cell 10 is assembled into a stacked cell, more sunlight can pass through the solar cell. In turn, the cells in the lower layer of the perovskite cell can receive more sunlight, thereby improving the photoelectric conversion efficiency of the stacked cell.

[0063] In some embodiments, the bottom and the wall of the second scribe groove 1026 are covered with the second electrode sublayer.

[0064] It can be understood that the solar cell 10 further includes a substrate 101. Optionally, the substrate 101 includes a transparent substrate.

[0065] In some embodiments, the first scribe groove 1024 also penetrates the perovskite layer 1022 to separate the perovskite layer 1022 into a plurality of perovskite sublayers. The functional sublayer 1025 includes a perovskite sublayer and a second sub-electrode layer. In the functional sublayer 1025, the second scribe groove 1026 penetrates the perovskite sublayer. Further, in adjacent functional sublayers 1025, the perovskite sublayer of an effective area 10251 and the perovskite sublayer of another ineffective area 10252 are both exposed from the edge of the first scribe groove 1024. Further, the edges of an effective area 10251 and another ineffective area 10252 serve as the groove walls of the first scribe groove 1024, respectively.

[0066] In some embodiments, both the active region 10251 and the inactive region 10252 are provided with a plurality of first metal gate lines 10254 that are spaced apart from each other.

[0067] It can be understood that the conductive reinforcement layer 10253 is located on at least one side of the second electrode sublayer, which means that the conductive reinforcement layer 10253 is located on the surface of the second electrode sublayer close to the perovskite sublayer, or the conductive reinforcement layer 10253 is located on the surface of the second electrode sublayer away from the perovskite sublayer, or in the thickness direction perpendicular to the perovskite sublayer, the two opposite surfaces of the second electrode sublayer are provided with the conductive reinforcement layer 10253.

[0068] Understandably, Figure 1 In the illustrated embodiment, the conductivity enhancement layer 10253 is located on the surface of the second electrode sublayer away from the perovskite sublayer.

[0069] It can also be understood that in other embodiments, the conductive reinforcement layer 10253 is located between the perovskite sublayer and the second electrode sublayer. In this way, the first metal grid line 10254 of the conductive reinforcement layer 10253 can be protected by the second electrode sublayer, reducing the risk of the softened encapsulation glue pulling the first metal grid line 10254 during the encapsulation process, thereby reducing the risk of the first metal grid line 10254 in the solar cell 10 being misaligned and falling off.

[0070] It can also be understood that in other embodiments, a conductive enhancement layer 10253 is provided between the perovskite sublayer and the second electrode sublayer, and a conductive enhancement layer 10253 is also provided on the surface of the second subelectrode layer away from the perovskite sublayer. This can further improve the transfer rate of charges in the solar cell 10 and improve the performance of the solar cell 10.

[0071] Furthermore, a conductive enhancement layer 10253 is provided between the perovskite sublayer and the second electrode sublayer, and a conductive enhancement layer 10253 is also provided on the surface of the second sub-electrode layer away from the perovskite sublayer, the projections of the first metal grid lines 10254 in the two conductive enhancement layers 10253 on the perovskite sublayer overlap, thereby reducing the shielding of sunlight by the first metal grid lines 10254, allowing sunlight to pass through the solar cell 10 with a greater transmittance.

[0072] It is also understood that the first metal gate line 10254 can be prepared by patterned template transfer. For example, when preparing the first metal gate line 10254, a patterned template can be used as a mask, and then the first metal gate line 10254 can be prepared by deposition.

[0073] Optionally, the first metal grid line 10254 includes one or more of a first copper grid line and a first silver grid line.

[0074] In some embodiments, the first metal grid line 10254 intersects with the scribing direction of the second scribing groove 1026. In this way, the projection area of ​​the first metal grid line 10254 on the perovskite sublayer can be smaller, which is beneficial to improve the transmittance of sunlight. Optionally, when the first metal grid line 10254 is perpendicular to the scribing direction of the second scribing groove 1026, the projection area of ​​the first metal grid line 10254 on the perovskite sublayer can be further reduced, thereby improving the transmittance of sunlight.

[0075] In some embodiments, a plurality of first metal gate lines 10254 are arranged in parallel. The plurality of first metal gate lines 10254 are arranged in parallel so that the first metal gate lines 10254 can maintain a relatively regular structure, which facilitates the design and processing of the first metal gate lines 10254.

[0076] In some embodiments, the width of the first metal grid line 10254 is 0.001 mm to 10 mm. The width of the first metal grid line 10254 within this range can further reduce the projection area of ​​the first metal grid line 10254 on the perovskite sublayer on the basis of exerting good conductive performance, so that sunlight can pass through the solar cell 10 with a higher transmittance. Optionally, the width of the first metal grid line 10254 can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value within the range consisting of any two of the above values.

[0077] In some embodiments, the thickness of the first metal gate line 10254 is 50nm to 200nm. The thickness of the first metal gate line 10254 within this range can make the first metal gate line 10254 have a more suitable resistance, and promote the transmission of charge in the perovskite battery on the basis of making the first metal gate line 10254 have better strength. Optionally, the thickness of the first metal gate line 10254 can be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm and any value within the range consisting of any two of the above values.

[0078] In some embodiments, the distance between adjacent first metal grid lines 10254 is 0.1 mm to 30 mm. The distance between adjacent first metal grid lines 10254 within this range can further reduce the projection area of ​​the first metal grid lines 10254 on the perovskite sublayer on the basis of exerting good conductive performance, so that sunlight can pass through the solar cell 10 with a higher transmittance. Optionally, the distance between adjacent first metal grid lines 10254 can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value within the range consisting of any two of the above values.

[0079] In some embodiments, the conductive enhancement layer 10253 further includes a plurality of second metal gate lines 10255 disposed at intervals and a plurality of third metal gate lines disposed at intervals (not shown in the figure), the plurality of second metal gate lines 10255 are located at the bottom of the second scribe groove 1026, the plurality of third metal gate lines are located at the groove wall of the second scribe groove 1026, and the plurality of second metal gate lines 10255 are connected to the plurality of first metal gate lines 10254 in a one-to-one correspondence through the plurality of third metal gate lines. The second metal gate lines 10255 and the third metal gate lines correspondingly connected to the first metal gate lines 10254 are arranged to facilitate the smooth transmission of charges. It is understood that the one-to-one correspondence connection indicates that each first metal gate line 10254 corresponds to a third metal gate line connected thereto. It is understood that the second metal gate line 10255 is located at the bottom of the second scribe groove 1026, indicating that the second metal gate line 10255 is located on the second electrode sublayer at the bottom of the second scribe groove 1026. Further, the second metal grid line 10255 may be located on the surface of the second electrode sublayer away from the first electrode layer 1021, or on the surface of the second electrode sublayer close to the first electrode layer 1021, or may be located at the surface of the second electrode sublayer away from the first electrode layer 1021 and between the second electrode sublayer and the first electrode layer 1021. Optionally, the second metal grid line 10255 includes one or more of a second copper grid line and a second silver grid line. Further optionally, the number of the first metal grid lines 10254, the second metal grid lines 10255, and the third metal grid lines are equal, and the first metal grid lines 10254, the second metal grid lines 10255, and the third metal grid lines are connected one by one.

[0080] It is understandable that the second metal gate line 10255 and the third gate line can be prepared separately or simultaneously with the first metal gate line 10254 .

[0081] In some embodiments, the angle between the second metal gate line 10255 and the scribing direction of the second scribing groove 1026 is greater than 0° and less than or equal to 90°.

[0082] See also Figure 2 In some embodiments, the angle between the second metal gate line 10255 and the scribing direction of the second scribing groove 1026 is 90°, that is, the second metal gate line 10255 is perpendicular to the scribing direction of the second scribing groove 1026. This makes it easy to prepare the first metal gate line 10254 and the second metal gate line 10255 at the same time. Figure 2 The position of the second scribe groove 1026 is marked with a dotted line. At this time, the angle α between the second metal gate line 10255 and the scribe direction of the second scribe groove 1026 is 90°.

[0083] See also Figure 3 In some embodiments, the angle between the second metal gate line 10255 and the scribe direction of the second scribe groove 1026 is greater than 0° and less than 90°. Figure 3 The position of the second scribe groove 1026 is marked with a dotted line in FIG. 1 . At this time, the angle between the second metal grid line 10255 and the scribe direction of the second scribe groove 1026 is α, 0<α<90°. Compared with the second metal grid line 10255 being perpendicular to the groove wall of the second scribe groove 1026, the second metal grid line 10255 designed at this time has a larger contact area with the second electrode sublayer, which can obtain a smaller resistance, thereby reducing the contact resistance generated by the second scribe groove 1026, which is beneficial to promoting the performance of the solar cell 10. For example, the angle between the second metal grid line 10255 and the scribe direction of the second scribe groove 1026 can be 10°, 30°, 45°, 60°, 80°, and any value within the range formed by any two of the above values.

[0084] Optionally, the second metal gate line 10255 can be prepared by patterned template transfer. For example, when preparing the second metal gate line 10255, a patterned template can be used as a mask, and then the second metal gate line 10255 can be prepared by deposition.

[0085] In some embodiments, the width of the second metal grid line 10255 is 0.001 mm to 10 mm. Optionally, the width of the second metal grid line 10255 can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value within a range consisting of any two of the above values. Within this range, the width of the second metal grid line 10255 can reduce the projected area of ​​the second metal grid line 10255 on the perovskite sublayer while exerting good conductive performance, so that sunlight can pass through the solar cell with a higher transmittance.

[0086] In some embodiments, the thickness of the second metal gate line 10255 is 50 nm to 200 nm. The thickness of the second metal gate line 10255 within this range can make the second metal gate line 10255 have good strength. Optionally, the thickness of the second metal gate line 10255 can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, and any value within the range consisting of any two of the above values.

[0087] In some embodiments, the distance between adjacent second metal grid lines 10255 is 0.1 mm to 30 mm. The distance between adjacent second metal grid lines 10255 within this range can reduce the projection area of ​​the second metal grid lines 10255 on the perovskite sublayer on the basis of exerting good conductive performance, so that sunlight can pass through the solar cell with a higher transmittance. Optionally, the distance between adjacent second metal grid lines 10255 can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value within the range consisting of any two of the above values.

[0088] In some embodiments, the angle between the third metal gate line and the bottom of the second scribe groove 1026 is greater than 0° and less than or equal to 90°. For example, the angle between the third metal gate line and the bottom of the second scribe groove 1026 can be 10°, 30°, 45°, 60°, 80°, 90°, or any value within the range of any two of the above values.

[0089] In some embodiments, the width of the third metal grid line is 0.001 mm to 10 mm. The width of the third metal grid line within this range can facilitate stable connection with the first metal grid line 10254 and the second metal grid line 10255 on the basis of exerting good conductive performance. Optionally, the width of the third metal grid line can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value within the range consisting of any two of the above values.

[0090] In some embodiments, the thickness of the third metal gate line is 50nm to 200nm. The thickness of the third metal gate line within this range can make the third metal gate line have good strength. Optionally, the thickness of the third metal gate line can be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm and any value within the range consisting of any two of the above values. Further optionally, the thickness of the first metal gate line 10254, the thickness of the second metal gate line 10255 and the thickness of the third metal gate line are equal.

[0091] In some embodiments, the distance between adjacent third metal grid lines is 0.1 mm to 30 mm. The distance between adjacent third metal grid lines within this range can facilitate stable connection with the first metal grid line 10254 and the second metal grid line 10255 on the basis of exerting good conductive performance. Optionally, the distance between adjacent third metal grid lines can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value within the range consisting of any two of the above values.

[0092] Optionally, the third metal grid line includes one or more of a third copper grid line and a third silver grid line.

[0093] See also Figure 4 In some embodiments, the conductive enhancement layer 10253 further includes a metal layer 10257 and a plurality of fourth metal grid lines (not shown) arranged at intervals, the metal layer covers the bottom of the second scribe groove 1026, the plurality of fourth metal grid lines are located on the groove wall of the second scribe groove 1026, the plurality of fourth metal grid lines correspond to the plurality of first metal grid lines 10254 one by one, and the metal layer 10257 is connected to the first metal grid lines 10254 through the fourth metal grid lines. By providing the metal layer 10257 to cover the bottom of the second scribe groove 1026, the contact resistance generated by the second scribe groove 1026 can be reduced, which is conducive to promoting the improvement of the performance of the solar cell 10. Optionally, the metal layer includes one or more of a copper layer and a silver layer. It can be understood that the metal layer 10257 can be located on the surface of the second electrode sublayer away from the first electrode layer 1021, or on the surface of the second electrode sublayer close to the first electrode layer 1021, or on the surface of the second electrode sublayer away from the first electrode layer 1021 and between the second electrode sublayer and the first electrode layer 1021. Optionally, the number of the first metal grid lines 10254 and the fourth metal grid lines is equal, and the first metal grid lines 10254 and the fourth metal grid lines are connected one by one.

[0094] In some embodiments, the thickness of the metal layer 10257 is 50 nm to 200 nm. The thickness of the metal layer 10257 within this range can make the metal layer 10257 have good strength. Optionally, the thickness of the metal layer 10257 can be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 200 nm, and any value within the range consisting of any two of the above values.

[0095] In some embodiments, the angle between the fourth metal gate line and the bottom of the second scribe groove 1026 is greater than 0° and less than or equal to 90°. For example, the angle between the fourth metal gate line and the bottom of the second scribe groove 1026 can be 10°, 30°, 45°, 60°, 80°, 90°, or any value within the range of any two of the above values.

[0096] In some embodiments, the width of the fourth metal grid line is 0.001 mm to 10 mm. The width of the fourth metal grid line within this range can facilitate stable connection with the first metal grid line 10254 on the basis of exerting good conductive performance. Optionally, the width of the fourth metal grid line can be 0.001 mm, 0.01 mm, 0.1 mm, 0.5 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, 10 mm, and any value within the range consisting of any two of the above values.

[0097] In some embodiments, the thickness of the fourth metal gate line is 50nm to 200nm. The thickness of the fourth metal gate line within this range can make the fourth metal gate line have good strength. Optionally, the thickness of the fourth metal gate line can be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 200nm and any value within the range consisting of any two of the above values. Further optionally, the thickness of the metal layer 10257, the thickness of the first metal gate line 10254 and the thickness of the fourth metal gate line are equal.

[0098] In some embodiments, the distance between adjacent fourth metal grid lines is 0.1 mm to 30 mm. The distance between adjacent fourth metal grid lines within this range can facilitate stable connection with the first metal grid line 10254 on the basis of exerting good conductive performance. Optionally, the distance between adjacent fourth metal grid lines can be 0.1 mm, 0.5 mm, 1 mm, 5 mm, 8 mm, 10 mm, 12 mm, 15 mm, 18 mm, 20 mm, 22 mm, 25 mm, 28 mm, 30 mm, and any value within the range consisting of any two of the above values.

[0099] Optionally, the fourth metal grid line includes one or more of a fourth copper grid line and a fourth silver grid line.

[0100] In some embodiments, the functional sublayer 1025 is further provided with a third scribe groove 10256, which penetrates the first electrode layer 1021, and separates the first electrode layer 1021 into a plurality of first electrode sublayers, and the effective area 10251 is arranged across two adjacent first electrode sublayers. Furthermore, the bottom of the first scribe groove 1024 and the bottom of the second scribe groove 1026 are both located on the first electrode sublayer. Optionally, the third scribe groove 10256 is filled in the perovskite sublayer in the effective area 10251. It is understandable that when the functional sublayer 1025 is further provided with the third scribe groove 10256, in Figure 1 In the example shown, in the direction from the third scribe groove 10256 to the first scribe groove 1024, there is a dead zone between the third scribe groove 10256 and the first scribe groove 1024. At this time, the effective area 10251 includes an effective power generation area and a part of the dead zone, and the ineffective area 10252 is part of the dead zone.

[0101] In some embodiments, the functional layer 102 further includes a charge transport layer, and the charge transport layer includes a hole transport layer 1027 and an electron transport layer 1028; one of the hole transport layer 1027 and the electron transport layer 1028 is located between the first electrode layer 1021 and the perovskite layer 1022, and the other is located between the perovskite layer 1022 and the second electrode layer 1023.

[0102] like Figure 1 In the solar cell 10 shown, the hole transport layer 1027 is located between the first electrode layer 1021 and the perovskite layer 1022, and the electron transport layer 1028 is located between the perovskite layer 1022 and the second electrode layer 1023, and an inverted solar cell is formed at this time. It can be understood that in some embodiments, the electron transport layer 1028 is located between the first electrode layer 1021 and the perovskite layer 1022, and the hole transport layer 1027 is located between the perovskite layer 1022 and the second electrode layer 1023, and a formal solar cell can be formed at this time.

[0103] See also Figure 5 In some embodiments, the solar cell 10 further includes an encapsulation layer 103 ; the encapsulation layer 103 is located on a surface of the second electrode layer 1023 away from the perovskite layer 1022 , and the encapsulation layer 103 fills at least a portion of the first scribe groove 1024 and at least a portion of the second scribe groove 1026 .

[0104] In some embodiments, the conductive enhancement layer 10253 is located between the second electrode sublayer and the perovskite layer 1022. Further, there is a charge transport layer between the second electrode sublayer and the perovskite layer 1022, and the conductive enhancement layer 10253 is located between the second electrode sublayer and the charge transport layer.

[0105] Another embodiment of the present application provides a method for preparing the above-mentioned perovskite solar cell. The method for preparing the perovskite solar cell comprises the following steps: preparing a first electrode layer and a perovskite layer in sequence. Scribing the perovskite layer to form a second scribe groove that penetrates the perovskite layer. Preparing a conductive enhancement layer on the perovskite layer, and preparing a second electrode layer on the conductive enhancement layer; and / or, preparing a second electrode layer on the perovskite layer, and preparing a conductive enhancement layer on the second electrode layer. Scribing the second electrode layer and the conductive enhancement layer to form a first scribe groove that penetrates the second electrode layer and the conductive enhancement layer.

[0106] Optionally, when forming the first scribing groove, the perovskite layer is scribed simultaneously, so that the first scribing groove separates the perovskite layer into a plurality of perovskite sub-layers.

[0107] It can be understood that before preparing the perovskite layer, the first electrode layer is scribed to form a third scribe groove penetrating the first electrode layer.

[0108] It can also be understood that the first scribe groove, the second scribe groove and the third scribe groove can be prepared by laser scribing, respectively.

[0109] In some embodiments, the conductive enhancement layer is prepared by patterned template transfer.

[0110] It is understandable that other functional layers, such as a modification layer (not shown in the figure), can be introduced into the perovskite solar cell as required. Optionally, the perovskite solar cell can be provided with a modification layer with a suitable energy level, which can play one or more of the roles of reducing the energy level barrier, promoting energy level matching, improving the carrier extraction efficiency, passivating the interface defect state, protecting the light absorption layer, inhibiting the oxidation and decomposition of water molecules and oxygen to the battery, improving the photoelectric conversion efficiency, and improving the stability of the perovskite cell. Depending on the position of the modification layer, the types of modification layers may include four types: a modification layer between the hole transport layer and the electrode layer, a modification layer between the electron transport layer and the electrode layer, a modification layer between the hole transport layer and the perovskite layer, and a modification layer between the electron transport layer and the perovskite layer. The materials that can be used for the modification layer in the perovskite cell may include, but are not limited to: Cu 2 O, NiO, AZO, TiO 2 wait.

[0111] It is understood that the perovskite layer includes a chemical formula of ABX 3 or A 2 CDX 6 Materials. Among them:

[0112] A is an inorganic or organic or organic-inorganic mixed cation, comprising at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation; the organic amine cation is selected from (NR1R2R3R4)+ 、(R1R2N=CR3R4) + 、(R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=R3R4) + , wherein R1, R2, R3, R4, R5 and R6 are each independently selected from H, substituted or unsubstituted C1-20 alkyl or substituted or unsubstituted aryl; A is optionally methylamino (CH 3 NH 3 + )(MA + ), carboxamidino (HC(NH 2 ) 2 + )(FA + ), cesium ion (Cs + ) and rubidium (Rb + ), and further optionally methylamino (CH 3 NH 3 + ) or carbamimidyl (HC(NH 2 ) 2 + ).

[0113] B is an inorganic or organic or organic-inorganic mixed cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum and europium, and optionally a divalent metal ion Pb 2+ and Sn 2+ At least one of .

[0114] C is an inorganic or organic or organic-inorganic mixed cation, optionally a monovalent metal ion Ag. + wait.

[0115] D is an inorganic or organic or organic-inorganic mixed cation, optionally a trivalent metal ion bismuth cation Bi 3+ 、Antimony cation Sb 3+ 、Indium cation In 3+ wait.

[0116] X is an inorganic or organic or organic-inorganic mixed anion, optionally one or more of a halogen anion and a carboxylate anion, and further optionally a bromide ion (Br - ) or iodide ion (I - ).

[0117] In some embodiments, the thickness of the perovskite layer is 100 nm to 1000 nm. As an example, the thickness of the perovskite layer can be, but is not limited to, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range between any two of the above values.

[0118] In some embodiments, the band gap of the perovskite layer is 1.2 eV to 2.3 eV. As an example, the band gap of the perovskite layer is 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or a range between any two of the above values. When the band gap of the perovskite layer is within the above range, it can have a higher visible light absorption efficiency.

[0119] In some embodiments, the material of the electron transport layer may include, but is not limited to, one or more of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), calcium titanate (CaTiO 3 ), lithium fluoride (LiF), calcium fluoride (CaF 2 ), poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS), poly(3-hexylthiophene) (P3HT), triphenylamine with triptycene as the core (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-anilino)carbazole-spirobifluorene (CzPAF-SBF), polythiophene, metal oxides, silicon oxide (SiO 2 ), SrTiO 3 ), cuprous thiocyanate (CuSCN), etc.; wherein the metal elements may include one or more of Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr.

[0120] In some embodiments, the material of the hole transport layer may include, but is not limited to, one or more of the following materials and their derivatives: 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), nickel oxide (NiO x ), poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), WO 3 Materials such as these can transport holes and block electrons.

[0121] Another embodiment of the present application provides a stacked battery. The stacked battery includes a top battery and a bottom battery stacked in layers; the top battery includes the above-mentioned solar cell.

[0122] Optionally, the stacked cell includes a perovskite-crystalline silicon stacked cell, a perovskite-perovskite stacked cell, a perovskite-heterojunction stacked cell, etc. It is understood that the stacked cell can be a stacked cell with two layers, three layers, four layers or more layers. Further, the connection between the stacked cells can be parallel or series connection.

[0123] Optionally, the solar cell further comprises a transparent substrate, which is located on a surface of the first electrode layer away from the perovskite layer, and the transparent substrate is further away from the bottom cell than the functional layer. Figure 1 The solar cell 10 shown is an example, the substrate 101 is a transparent substrate, and in the stacked cell, the substrate 101 is further away from the bottom cell than the functional layer 102. Figure 1 For example, in the tandem cell, the solar cell 10 is inverted so that the substrate 101 is located above the functional layer 102. By introducing the above solar cell into the tandem cell, sunlight can pass through the perovskite solar cell with a greater transmittance, so that the bottom cell can receive more sunlight, thereby improving the efficiency of the tandem cell. Optionally, the bottom cell includes a silicon-based solar cell. Further optionally, the silicon-based solar cell includes at least one of a crystalline silicon solar cell and a heterojunction solar cell.

[0124] Another embodiment of the present application provides a photovoltaic system, which includes at least one of the above-mentioned solar cell and the above-mentioned laminated cell.

[0125] Another embodiment of the present application provides a power generation device. The power generation device includes at least one of the above-mentioned solar cell and the above-mentioned laminated battery. The type of the power generation device may include but is not limited to integrated power generation. The location of the power generation device may include but is not limited to the roof, back panel, etc. of the car.

[0126] Another embodiment of the present application provides an electric device. The electric device includes at least one of the above-mentioned solar cell and the above-mentioned laminated battery. Optionally, the electric device may include a mobile device, such as a mobile phone, a laptop computer, an electric vehicle, an electric train, a ship, a satellite, a power generation system, etc., but is not limited thereto.

[0127] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the present application will be further described in detail below in conjunction with the embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0128] If no specific techniques or conditions are specified in the examples, the techniques or conditions described in the literature in the field or the product instructions are used. If no manufacturer is specified for the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0129] Example 1

[0130] In this embodiment, the solar cell is an inverse perovskite solar cell.

[0131] The method for preparing a solar cell in this embodiment includes:

[0132] S101: Take a set of specifications of 30cm 2 ×30cm 2 The FTO conductive glass was etched with a laser marking machine to remove the 0.5 cm area on both sides of the FTO conductive glass. After cleaning with a cleaning agent, the FTO conductive glass was ultrasonically treated in deionized water, ethanol, and acetone for 10 minutes in succession. After the ultrasonic treatment, it was blown dry with nitrogen for use.

[0133] S102: The FTO conductive glass is treated with UV ozone and then -5 Under 300 Torr, nickel oxide with a thickness of 30 nm was magnetron sputtered and annealed at 200°C for 30 min to obtain a hole transport layer.

[0134] S103: Perform a third scribing on the hole transport layer and the FTO conductive glass to obtain a third scribing groove, and then put the product into an ultrasonic cleaning device, clean it for 1 minute, and dry it at 100° C. for 10 minutes.

[0135] S104: A 500 nm thick perovskite film is coated on the surface of the hole transport layer away from the FTO conductive glass, and the film surface is continuously blown with an air knife for 30 seconds, and then the film is transferred to a heating table and annealed at 100° C. for 10 minutes to form a perovskite layer.

[0136] S105: Using vacuum thermal evaporation coating technology, in 1×10 -6 At 400 Å / min, C60 with a thickness of 50 nm and BCP with a thickness of 20 nm were sequentially evaporated to obtain an electron transport layer.

[0137] S106: 1×10 -5 At 1000 Torr, a 100 nm thick ITO transparent electrode was magnetron sputtered, and then the ITO transparent electrode, the electron transport layer, the perovskite layer, and the hole transport layer were second scribed to obtain a second scribed groove. After obtaining the second scribed groove, an ITO transparent electrode with a thickness of 100 nm was sputtered to obtain a second electrode.

[0138] S107: Using vacuum thermal evaporation coating process, using a mask plate, at 1×10 -6 Under 200-400 0.1 Torr, a copper grid line with a thickness of 100 nm, a width of 0.1 mm, and a distance of 10 mm between adjacent copper grid lines is deposited on the ITO transparent electrode, and the copper grid line is perpendicular to the scribing direction of the second scribing groove. Then, the first scribing is performed to obtain the first scribing groove, so that the perovskite solar cell forms a series structure.

[0139] Embodiment 2 to Embodiment 4

[0140] Compared with Example 1, the differences between Examples 2 to 4 are that the thickness and width of the copper grid lines and the distance between adjacent copper grid lines are different, as shown in Table 1.

[0141] Example 5

[0142] In this embodiment, the solar cell is a formal perovskite solar cell.

[0143] The method for preparing a solar cell in this embodiment includes:

[0144] S101: Take a set of specifications of 30cm 2 ×30cm 2 The FTO conductive glass was etched with a laser marking machine to remove the 0.5 cm area on both sides of the FTO conductive glass. After cleaning with a cleaning agent, the FTO conductive glass was ultrasonically treated in deionized water, ethanol, and acetone for 10 minutes in succession. After the ultrasonic treatment, it was blown dry with nitrogen for use.

[0145] S102: treating the FTO conductive glass with ultraviolet ozone, then coating it with a 20% concentration of tin oxide nanoparticle dispersion, and annealing it at 100° C. for 30 minutes to obtain an electron transport layer.

[0146] S103: Perform a third scribing on the electron transport layer and the FTO conductive glass to obtain a third scribing groove, and then put the product into an ultrasonic cleaning device, clean it for 1 minute, and dry it at 100° C. for 10 minutes.

[0147] S104: A 500 nm thick perovskite film is coated on the surface of the electron transport layer away from the FTO conductive glass, and the film surface is continuously blown with an air knife for 30 seconds, and then the film is transferred to a heating table and annealed at 100° C. for 10 minutes to form a perovskite layer.

[0148] S105: Coat a 50 nm thick Spiro-OMeTAD hole transport layer on top of the perovskite layer.

[0149] S106: 1×10 -5 At 1000 Torr, a 100 nm thick ITO transparent electrode was magnetron sputtered, and then the ITO transparent electrode, the hole transport layer, the perovskite layer, and the electron transport layer were scribed for the second time to obtain a second scribed groove. After obtaining the second scribed groove, an ITO transparent electrode with a thickness of 100 nm was sputtered to obtain a second electrode.

[0150] S107: Using vacuum thermal evaporation coating process, using a mask plate, at 1×10 -6 Under 200-400 0.1 Torr, a copper grid line with a thickness of 100 nm, a width of 0.1 mm, and a distance of 10 mm between adjacent copper grid lines is deposited on the ITO transparent electrode, and the copper grid line is perpendicular to the scribing direction of the second scribing groove. Then, the first scribing is performed to obtain the first scribing groove, so that the perovskite solar cell forms a series structure.

[0151] Embodiment 6 to Embodiment 8

[0152] Compared with Example 1, the differences between Examples 6 to 8 are that the thickness and width of the copper grid lines and the distance between adjacent copper grid lines are different, as shown in Table 1.

[0153] Comparative Example 1

[0154] The solar cell in this comparative example is an inverse perovskite solar cell.

[0155] The method for preparing the solar cell in this comparative example includes:

[0156] S101: Take a set of specifications of 30cm 2 ×30cm 2 The FTO conductive glass was etched with a laser marking machine to remove the 0.5 cm area on both sides of the FTO conductive glass. After cleaning with a cleaning agent, the FTO conductive glass was ultrasonically treated in deionized water, ethanol, and acetone for 10 minutes in succession. After the ultrasonic treatment, it was blown dry with nitrogen for use.

[0157] S102: The FTO conductive glass is treated with UV ozone and then -5 Under 300 Torr, nickel oxide with a thickness of 30 nm was magnetron sputtered and annealed at 200°C for 30 min to obtain a hole transport layer.

[0158] S103: Perform a third scribing on the hole transport layer and the FTO conductive glass to obtain a third scribing groove, and then put the product into an ultrasonic cleaning device, clean it for 1 minute, and dry it at 100° C. for 10 minutes.

[0159] S104: A 500 nm thick perovskite film is coated on the surface of the hole transport layer away from the FTO conductive glass, and the film surface is continuously blown with an air knife for 30 seconds, and then the film is transferred to a heating table and annealed at 100° C. for 10 minutes to form a perovskite layer.

[0160] S105: Using vacuum thermal evaporation coating technology, in 1×10 -6 At 400 Å / min, C60 with a thickness of 50 nm and BCP with a thickness of 20 nm were sequentially evaporated to obtain an electron transport layer.

[0161] S106: 1×10 -5 At 1000 Torr, a 100 nm thick ITO transparent electrode was magnetron sputtered, and then the ITO transparent electrode, the electron transport layer, the perovskite layer, and the hole transport layer were second scribed to obtain a second scribed groove. After obtaining the second scribed groove, an ITO transparent electrode with a thickness of 100 nm was sputtered to obtain a second electrode.

[0162] S107: Perform a first scribing on the product to obtain a first scribing groove, so that the perovskite solar cell forms a series structure.

[0163] Comparative Example 2

[0164] The solar cell in this comparative example is a formal perovskite solar cell.

[0165] The method for preparing the solar cell in this comparative example includes:

[0166] S101: Take a set of specifications of 30cm 2 ×30cm 2 The FTO conductive glass was etched with a laser marking machine to remove the 0.5 cm area on both sides of the FTO conductive glass. After cleaning with a cleaning agent, the FTO conductive glass was ultrasonically treated in deionized water, ethanol, and acetone for 10 minutes in succession. After the ultrasonic treatment, it was blown dry with nitrogen for use.

[0167] S102: treating the FTO conductive glass with ultraviolet ozone, then coating it with a 20% concentration of tin oxide nanoparticle dispersion, and annealing it at 100° C. for 30 minutes to obtain an electron transport layer.

[0168] S103: Perform a third scribing on the electron transport layer and the FTO conductive glass to obtain a third scribing groove, and then put the product into an ultrasonic cleaning device, clean it for 1 minute, and dry it at 100° C. for 10 minutes.

[0169] S104: A 500 nm thick perovskite film is coated on the surface of the electron transport layer away from the FTO conductive glass, and the film surface is continuously blown with an air knife for 30 seconds, and then the film is transferred to a heating table and annealed at 100° C. for 10 minutes to form a perovskite layer.

[0170] S105: Coat a 50 nm thick Spiro-OMeTAD hole transport layer on top of the perovskite layer.

[0171] S106: 1×10 -5 At 1000 Torr, a 100 nm thick ITO transparent electrode was magnetron sputtered, and then the ITO transparent electrode, the hole transport layer, the perovskite layer, and the electron transport layer were scribed for the second time to obtain a second scribed groove. After obtaining the second scribed groove, an ITO transparent electrode with a thickness of 100 nm was sputtered to obtain a second electrode.

[0172] S107: Perform a first scribing on the product to obtain a first scribing groove, so that the perovskite solar cell forms a series structure.

[0173] Test Case

[0174] The photoelectric conversion efficiency of the solar cells obtained in the examples and comparative examples was tested by the following method:

[0175] Using a solar simulator under standard test conditions (total irradiance 100mW / cm 2 , the temperature of the tested cell is 25°C, the spectral distribution is AM1.5G), and the photoelectric conversion efficiency of the perovskite solar cell is tested, and the readings are recorded using a Keithley 2400 series digital multimeter. The photoelectric conversion efficiency of the perovskite solar cell is calculated as follows:

[0176] PCE=P OUT / P OPT

[0177] =V OC ×J SC ×(V MPP ×J MPP ) / (V OC ×J SC )

[0178] =V OC ×J SC ×FF

[0179] Among them, P OUT , POPT 、V MPP (V) J MPP (mA / cm 2 ), V OC (V) and J SC (mA / cm 2 ) are the solar cell output power, incident light power, cell maximum power point voltage, cell maximum power point current, open circuit voltage and short circuit current. OUT , P OPT 、V MPP (V) J MPP (mA / cm 2 ), V OC (V) and J SC (mA / cm 2 ) was obtained by a digital multimeter. The results are shown in Table 1.

[0180] Table 1

[0181]

[0182] As can be seen from Table 1, compared with Comparative Example 1, Examples 1 to 4 show that the introduction of copper grid lines can improve the photoelectric conversion efficiency of the battery in the inverted battery structure. Compared with Comparative Example 2, Examples 5 to 8 show that the introduction of copper grid lines can improve the photoelectric conversion efficiency of the battery in the regular battery structure.

[0183] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0184] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A solar cell, characterized in that: It comprises a functional layer; the functional layer comprises a first electrode layer, a perovskite layer and a second electrode layer stacked in sequence; A first scribe groove is provided in the functional layer, the first scribe groove penetrates the second electrode layer to separate the second electrode layer into a plurality of second electrode sub-layers, and the first scribe groove divides the functional layer into a plurality of functional sub-layers; A second scribe groove is provided in the functional sublayer, the second scribe groove runs through the perovskite layer and separates the perovskite layer in the functional sublayer into an effective area and an ineffective area; The functional sublayer is further provided with a conductive enhancement layer, which is located on at least one side of the second electrode sublayer; the conductive enhancement layer includes a plurality of first metal grid lines arranged at intervals, and the plurality of first metal grid lines are located in the effective area.

2. The solar cell according to claim 1, characterized in that: The bottom and the wall of the second scribe groove are covered with the second electrode sublayer.

3. The solar cell according to claim 1 or 2, characterized in that: The first metal gate line satisfies one or more of the following characteristics (1) to (3): (1) The width of the first metal grid line is 0.001 mm to 10 mm; (2) The thickness of the first metal gate line is 50 nm to 200 nm; (3) The distance between adjacent first metal grid lines is 0.1 mm to 30 mm.

4. The solar cell according to any one of claims 1 to 2, characterized in that The first metal gate line intersects with a scribing direction of the second scribing groove.

5. The solar cell according to claim 4, characterized in that: The first metal gate line is perpendicular to a scribing direction of the second scribing groove.

6. The solar cell according to any one of claims 1 to 2 and 5, characterized in that: The conductive enhancement layer also includes a plurality of second metal gate lines arranged at intervals and a plurality of third metal gate lines arranged at intervals, the plurality of second metal gate lines are located at the bottom of the second scribe groove, the plurality of third metal gate lines are located at the groove wall of the second scribe groove, and the plurality of second metal gate lines are connected to the plurality of first metal gate lines in a one-to-one correspondence through the plurality of third metal gate lines.

7. The solar cell according to claim 6, characterized in that: The second metal gate line satisfies one or more of the following characteristics (1) to (4): (1) The angle between the second metal gate line and the scribing direction of the second scribing groove is greater than 0° and less than or equal to 90°; (2) The width of the second metal grid line is 0.001 mm to 10 mm; (3) The thickness of the second metal gate line is 50 nm to 200 nm; (4) The distance between adjacent second metal grid lines is 0.1 mm to 30 mm.

8. The solar cell according to claim 6, characterized in that: The third metal gate line meets one or more of the following characteristics (1) to (4): (1) An included angle between the third metal gate line and the bottom of the second scribe groove is greater than 0° and less than or equal to 90°; (2) The width of the third metal grid line is 0.001 mm to 10 mm; (3) The thickness of the third metal gate line is 50 nm to 200 nm; (4) The distance between adjacent third metal grid lines is 0.1 mm to 30 mm.

9. The solar cell according to any one of claims 1 to 2, 5, 7 to 8, characterized in that: The conductive enhancement layer also includes a metal layer and a plurality of fourth metal gate lines arranged at intervals, the metal layer covers the bottom of the second scribe groove, the plurality of fourth metal gate lines are located on the groove wall of the second scribe groove, the plurality of fourth metal gate lines correspond one-to-one to the plurality of first metal gate lines, and the metal layer is connected to the first metal gate lines through the fourth metal gate lines.

10. The solar cell according to claim 9, characterized in that: The thickness of the metal layer is 50nm-200nm.

11. The solar cell according to claim 9, characterized in that: The fourth metal gate line meets one or more of the following characteristics (1) to (4): (1) An included angle between the fourth metal gate line and the bottom of the second scribe groove is greater than 0° and less than or equal to 90°; (2) The width of the fourth metal grid line is 0.001 mm to 10 mm; (3) The thickness of the fourth metal gate line is 50 nm to 200 nm; (4) The distance between adjacent fourth metal grid lines is 0.1 mm to 30 mm.

12. The solar cell according to any one of claims 1 to 2, 5, 7 to 8, 10 to 11, characterized in that: A third scribe groove is further provided in the functional sublayer, and the third scribe groove penetrates the first electrode layer. The third scribe groove separates the first electrode layer into a plurality of first electrode sublayers, and the effective area is arranged across two adjacent first electrode sublayers.

13. The solar cell according to any one of claims 1 to 2, 5, 7 to 8, 10 to 11, characterized in that: The functional layer also includes a charge transport layer, which includes a hole transport layer and an electron transport layer; one of the hole transport layer and the electron transport layer is located between the first electrode layer and the perovskite layer, and the other is located between the perovskite layer and the second electrode layer.

14. The solar cell according to any one of claims 1 to 2, 5, 7 to 8, 10 to 11, characterized in that: The solar cell further includes an encapsulation layer; the encapsulation layer is located on a surface of the second electrode layer away from the perovskite layer, and the encapsulation layer fills at least a portion of the first scribe groove and at least a portion of the second scribe groove.

15. The solar cell according to claim 14, characterized in that: The conductivity enhancement layer is located between the second electrode sublayer and the perovskite layer.

16. The solar cell according to claim 15, characterized in that: A charge transport layer is provided between the second electrode sublayer and the perovskite layer, and the conductivity enhancement layer is located between the second electrode sublayer and the charge transport layer.

17. A laminated battery, characterized in that: It comprises a top cell and a bottom cell which are stacked; the top cell comprises the solar cell according to any one of claims 1 to 16.

18. The laminated battery according to claim 17, characterized in that: The solar cell further includes a transparent substrate, which is located on a surface of the first electrode layer away from the perovskite layer. The transparent substrate is further away from the bottom cell than the functional layer.

19. The laminated battery according to claim 17 or 18, characterized in that: The bottom cell includes a silicon-based solar cell.

20. A photovoltaic system, characterized in that: The invention comprises at least one of the solar cell according to any one of claims 1 to 16 and the stacked cell according to any one of claims 17 to 19.

21. A power generation device, characterized in that: The invention comprises at least one of the solar cell according to any one of claims 1 to 16 and the stacked cell according to any one of claims 17 to 19.

22. An electrical device, characterized in that: The invention comprises at least one of the solar cell according to any one of claims 1 to 16 and the stacked cell according to any one of claims 17 to 19.

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