Semiconductor laser
By setting wall seats on the base of the semiconductor laser and arranging mirror groups and optical path groups, the problems of uneven heat dissipation, difficult installation and large volume in the prior art are solved, and a more compact structure and higher laser beam quality are achieved.
Patent Information
- Application Number
- CN202421473955.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-26
- Publication Date
- 2025-06-17
- Estimated Expiration
- 2034-06-26
AI Technical Summary
Existing semiconductor lasers use step structures when combining beams, resulting in uneven heat dissipation, difficult and large volume of optical path shaping and assembly.
By providing a wall seat on the base, a mirror group is arranged using the wall seat, the collimated light beam is turned from the first mounting surface to the second mounting surface, and the mirror group and the optical path group are arranged using a three-dimensional space to achieve a compact arrangement of the optical path.
The overall structure of the semiconductor laser is achieved, which reduces the space size and volume, reduces the base processing accuracy requirements, improves heat dissipation uniformity, and improves beam combining density and laser beam quality.
Smart Images
Figure CN222996030U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor lasers, and particularly to a semiconductor laser. Background Art
[0002] At present, most multi-single-bar semiconductor lasers adopt a stepped structure when combining beams. The positions on the base plate where the semiconductor laser chips are placed are processed into steps with a certain pitch. The main disadvantages of this solution are as follows: 1. High processing precision requirements for the parallelism of the base plate steps and the pitch of the steps; 2. Since the steps exist, the cooling water channels need to be processed obliquely, increasing the processing difficulty of the base plate water channels; 3. The height difference of the steps leads to uneven heat dissipation of the semiconductor laser chips; 4. To increase the number of combined chips, the step pitch must be compressed, thereby increasing the optical alignment difficulty and reducing the product yield; 5. The optical path is on the same plane, and the overall volume of the laser is large.
[0003] In view of the above problems, some inventions separate the optical paths of single-bar semiconductor laser chips by tilting the optical path to replace the steps, reducing the adverse effects of the steps. However, the above solutions are seriously affected by the deformation of the optical path tilt angle. Especially as the number of chips increases, the difficulty of optical path shaping increases significantly, and the laser volume cannot be reduced. Utility Model Content
[0004] This application mainly provides a semiconductor laser to solve the problems of uneven heat dissipation, large optical path shaping and alignment difficulty, and large volume in existing semiconductor lasers.
[0005] To solve the above technical problems, a technical solution adopted in this application is: providing a semiconductor laser. The semiconductor laser includes: a housing, including a base and a wall seat, the base having a first mounting surface, and the wall seat being disposed on the first mounting surface of the base and having a second mounting surface perpendicular to the first mounting surface; a multi-channel collimated optical path group, all disposed on the first mounting surface and used for emitting multi-channel collimated light beams along a first direction parallel to the first mounting surface; a multi-channel mirror group, each including a bottom mirror and a combining mirror spaced along a second direction on the bottom of the second mounting surface, each mirror group corresponding to each collimated optical path group, the bottom mirror reflecting the collimated light beam transmitted along the first direction into a second direction parallel to the second mounting surface and transmitting it to the combining mirror, and the reflecting surfaces of each combining mirror being disposed on the second mounting surface at a preset angle, such that the subsequent combining mirror is used to lift the corresponding collimated light beam to cross the previous combining mirror; a rhombic prism, the rhombic prism being disposed on the outgoing optical path of the multi-channel mirror group and used for performing tilt compensation on each collimated light beam, such that each collimated light beam is emitted along a third direction parallel to the first mounting surface and the second mounting surface.
[0006] In some embodiments, each of the beam-combining reflectors is disposed at the same height, and both the first mounting surface and the second mounting surface are flat surfaces.
[0007] In some embodiments, the incident surface of the rhomboid prism satisfies the following formulas [1] and [2]:
[0008] ζ = 90° - α / 2 ------------------------------- Formula [1];
[0009] sin(90° + β - δ) = n * sin(90 - δ) ------------ Formula [2];
[0010] Wherein, α represents the turning angle of the collimated beam by the mirror group in a plane parallel to the second mounting surface; β represents the angle by which the collimated beam is lifted relative to the second mounting surface by the mirror group; ζ represents the angle between the incident surface and the collimated beam in a plane parallel to the second mounting surface; δ represents the angle between the incident surface and the second mounting surface in a plane perpendicular to the second mounting surface and parallel to the optical axis; n represents the ratio of the refractive index of the rhomboid prism to the refractive index of its surrounding environment.
[0011] In some embodiments, a reflecting surface is further disposed between the incident surface and the exit surface of the rhomboid prism. When each collimated beam is incident on the reflecting surface, it deflects by -α in a plane parallel to the first mounting surface.
[0012] In some embodiments, a reflecting surface is further disposed between the incident surface and the exit surface of the rhomboid prism. When each collimated beam is incident on the reflecting surface, it deflects by 180° - α in a plane parallel to the first mounting surface.
[0013] In some embodiments, the base includes a bottom wall provided with the mounting surface, and the wall seat is a side wall connecting one side of the bottom wall; or
[0014] The wall seat is connected to a non-edge area of the bottom wall.
[0015] In some embodiments, the base includes a bottom wall provided with the mounting surface, and the wall seat is a partition connected to the bottom wall, thereby dividing the mounting surface of the bottom wall into two mounting areas. There are multiple parallel second mounting surfaces on both sides of the wall seat, and the multi-channel collimated optical path groups and the corresponding multi-channel mirror groups are symmetrically disposed on both sides of the wall seat. The rhomboid prism is provided on the exit optical path of each multi-channel mirror group.
[0016] In some embodiments, the semiconductor laser further includes a secondary optical path reflector and a beam combining prism. The beam combining prism is disposed on the outgoing optical path of one of the rhombic prisms, and the secondary optical path reflector is disposed on the outgoing optical path of the other rhombic prism. The secondary optical path reflector is configured to reflect the corresponding collimated beam to an incident surface of the beam combining prism, so that the two collimated beams are combined by the beam combining prism.
[0017] In some embodiments, the semiconductor laser further includes a focusing lens group, and the focusing lens group is disposed on the optical path of the collimated beam transmitted by the rhombic prism;
[0018] The outgoing direction of the focusing lens group is the same as the third direction; or
[0019] The semiconductor laser further includes a main optical path reflector group, and the main optical path reflector group is disposed on the optical path between the rhombic prism and the focusing lens group and is configured to adjust the transmission direction of the optical path of the collimated beam after passing through the rhombic prism, wherein the outgoing direction of the focusing lens group is parallel to the first direction, or the focusing lens group is located above the multi-path collimated optical path group and the outgoing direction of the focusing lens group is opposite to the third direction.
[0020] In some embodiments, the collimated optical path group includes a laser chip, a fast axis collimating mirror, and a slow axis collimating mirror. The laser chip, the fast axis collimating mirror, and the slow axis collimating mirror are disposed on the first mounting surface along the first direction, and the laser output by the laser chip sequentially passes through the fast axis collimating mirror, the slow axis collimating mirror, the bottom reflector, and the beam combining reflector; or
[0021] The laser chip and the fast axis collimating mirror are disposed on the first mounting surface along the first direction, the slow axis collimating mirror is disposed on the second mounting surface and is located between the bottom reflector and the beam combining reflector, and the laser output by the laser chip sequentially passes through the fast axis collimating mirror, the bottom reflector, the slow axis collimating mirror, and the beam combining reflector.
[0022] The beneficial effects of the present application are as follows: Different from the prior art, the present application discloses a semiconductor laser. By providing a wall base on the base to arrange the mirror group using the wall base, the collimated light beam transmitted along the first mounting surface is turned to be transmitted along a direction parallel to the second mounting surface. The three-dimensional space above the first mounting surface is used to arrange the mirror group and even the optical devices in part of the collimated optical path group, and the three-dimensional space above the first mounting surface is used to accommodate the optical path. In this way, the overall structure of the semiconductor laser is more compact, reducing its spatial size and volume. The multi-channel collimated optical path group is installed on the same mounting surface, and the bottom wall of the base can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall and is also beneficial for setting the cooling water channels in the bottom wall, making the heat dissipation of each laser chip more uniform. Further, each mirror group is arranged on the second mounting surface of the wall base, and the beam combining mirror is also used to lift the corresponding collimated light beam, so that the collimated light beam can cross the beam combining mirror in front, avoiding the collimated light beam reflected by the mirror group in front from blocking the mirror group behind. Moreover, by using the assembly relationship between the mirror group and the second mounting surface, the lifting angles of each collimated light beam can be kept consistent, ensuring the parallelism between each collimated light beam. And the rhomboid prism can make each collimated light beam exit along a third direction parallel to the first mounting surface and the second mounting surface, reducing the adjustment difficulty of the light beam and improving the beam combining density, and improving the quality of the laser light beam transmitted in the output optical fiber after convergence. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained according to these drawings, where:
[0024] Figure 1 is a schematic structural diagram of an embodiment of the semiconductor laser provided by the present application;
[0025] Figure 2 is Figure 1 a partial structural schematic diagram of the semiconductor laser shown;
[0026] Figure 3 is Figure 1 a schematic optical path diagram of another embodiment of the semiconductor laser shown;
[0027] Figure 4 is Figure 1 a schematic optical path diagram of the collimated light beam group emitted by the mirror group provided in [reference] incident on the rhomboid prism;
[0028] Figure 5 is Figure 1Schematic structural diagram of the rhombic prism provided in
[0029] Figure 6 is Figure 1 Schematic diagram of light refraction on the incident surface of the rhombic prism under front view provided in
[0030] Figure 7 Schematic diagram of light refraction on the incident surface of the rhombic prism under top view provided in the embodiment
[0031] Figure 8 is Figure 1 Schematic diagram of the optical path structure of another embodiment of the semiconductor laser shown
[0032] Figure 9 Schematic diagram of another structure of the semiconductor laser provided in the embodiment of the present application
[0033] Figure 10 is Figure 9 Schematic structural diagram of one of the rhombic prisms provided in the embodiment
[0034] Figure 11 is Figure 10 Schematic diagram of the optical path when the reflecting surface of the rhombic prism in deflects the collimated beam by 180 - α under front view
[0035] Figure 12 is Figure 1 Schematic diagram of the optical path when the reflecting surface of the rhombic prism in deflects the collimated beam by -α under front view. Detailed implementation manners
[0036] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.
[0037] The terms "first", "second", and "third" in the embodiments of the present application are only for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", and "third" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products, or devices.
[0038] Reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.
[0039] The present application provides a semiconductor laser 100. Refer to Figures 1 to 4 , Figure 1 which is a schematic structural diagram of an embodiment of the semiconductor laser provided by the present application. Figure 2 is Figure 1 a partial structural schematic diagram of the semiconductor laser shown. Figure 3 is Figure 1 a schematic optical path diagram of another embodiment of the semiconductor laser shown; Figure 4 is Figure 1 a schematic optical path diagram of the collimated beam group emitted from the mirror group provided in
[0040] The semiconductor laser 100 includes a housing 10, a multi-channel collimated optical path group 20, a multi-channel mirror group 30, a rhomboid prism 35, a focusing lens group 40, and an output optical fiber 50. The multi-channel collimated optical path group 20, the multi-channel mirror group 30, the rhomboid prism 35, and the focusing lens group 40 are all disposed in the housing 10. The focusing lens group 40 can compress the laser beam and couple it into the output optical fiber 50 to form a laser transmitted in the optical fiber.
[0041] The package 10 includes a base 12 and a wall base 14. The base 12 and the wall base 14 can be of an integral structure, or can be separate individuals and connected. The base 12 has a first mounting surface 120, and the wall base 14 is disposed on the first mounting surface 120 of the base 12 and is provided with a second mounting surface 140 perpendicular to the first mounting surface 120. A plurality of collimated optical path groups 20 are all disposed on the first mounting surface 120 and are used to emit a plurality of collimated light beams along a first direction A parallel to the first mounting surface 120; a plurality of mirror groups 30 are all disposed on the respective second mounting surfaces 140, and each mirror group 30 is disposed corresponding to each collimated optical path group 20 and includes a bottom mirror 31 and a beam combining mirror 32 that are spaced apart along a second direction B on the bottom of the second mounting surface 140. The bottom mirror 31 reflects the collimated light beam transmitted along the first direction A into a light beam transmitted along a second direction B parallel to the second mounting surface 140 and transmits it to the beam combining mirror 32. The reflecting surfaces of the respective beam combining mirrors 32 are disposed on the second mounting surface 140 at a preset angle, so that the subsequent beam combining mirror 32 is used to lift the corresponding collimated light beam to cross the previous beam combining mirror 32; a rhombic prism 35 is disposed on the outgoing optical path of the plurality of mirror groups 30 and is used to perform tilt compensation on the respective collimated light beams, so that the respective collimated light beams are emitted along a third direction C parallel to the first mounting surface 120 and the second mounting surface 140.
[0042] The respective beam combining mirrors 32 are at the same height, and both the first mounting surface 120 and the second mounting surface 140 are flat surfaces. Therefore, the subsequent beam combining mirror 32 needs to lift the corresponding collimated light beam to cross the previous beam combining mirror 32 to prevent the previous beam combining mirror 32 from blocking the transmission of the collimated light beam. The collimated light beam reflected by the beam combining mirror 32 is transmitted in an inclined posture relative to the first mounting surface 120 or the second mounting surface 140.
[0043] Among them, the base 12 can be made of copper, aluminum or other heat dissipation substrates, which can make the heat dissipation performance of the laser chip better. The wall base 14 can be made of lightweight aluminum or plastic, etc., to facilitate the lightweight of the semiconductor laser 100.
[0044] The first mounting surface 120 is a flat surface. The collimated optical path group 20 includes a laser chip 21. The respective laser chips 21 in the plurality of collimated optical path groups 20 are arranged side by side on the mounting surface 120 of the base 12. By standardizing the distribution mode of the laser chips 21, the utilization efficiency of the mounting surface 120 can be improved, and the size and volume of the semiconductor laser 100 can be reduced.
[0045] In other embodiments, the respective laser chips 21 can also be arranged on the first mounting surface 120 in a non-side-by-side manner. For example, there is a dislocation in the arrangement direction between the laser chips 21.
[0046] Since the first mounting surface 120 is a flat surface, the bottom wall 121 of the base 12 can be set as a flat plate with uniform thickness, which can reduce the machining accuracy requirements for the bottom wall 121 and is also conducive to setting the cooling water channels in the bottom wall 121, making the heat dissipation of each laser chip 21 more uniform.
[0047] The multi-channel collimated light path group 20 is all arranged on the first mounting surface 120. It can be understood that each device constituting the collimated light path group 20 is at least partially arranged on the first mounting surface 120, or all the devices constituting the collimated light path group 20 are arranged on the first mounting surface 120.
[0048] In this embodiment, the collimated light path 20 includes a laser chip 21, a fast-axis collimating mirror 22, and a slow-axis collimating mirror 23. Among them, at least the laser chip 21 and the fast-axis collimating mirror 22 are directly arranged on the first mounting surface 120, and the slow-axis collimating mirror 23 can be arranged on the first mounting surface 120 or the second mounting surface 140.
[0049] When the slow-axis collimating mirror 23 is arranged on the second mounting surface 140, the collimated light beam can be redirected through the mirror group 30 and then pass through the slow-axis collimating mirror 23. Thus, the space above the mounting surface 120 of the base 12 can be utilized by means of the wall base 14, separating the slow-axis collimating mirror 23 and some devices in the mirror group 30 from the first mounting surface 120 where the laser chip 21 is located in space to form a three-dimensional distribution, which can greatly utilize the upper space above the first mounting surface 120, thereby effectively reducing the volume of the semiconductor laser 100.
[0050] The light beam emitted by the laser chip 21 usually exhibits an elliptical divergence characteristic. One of the directions is called the "slow axis", and its divergence angle is relatively small (for example, about 10°), and the other direction is called the "fast axis", with a larger divergence angle (possibly reaching 40°).
[0051] The fast-axis collimating mirror 22 and the slow-axis collimating mirror 23 are key components for beam shaping and control, complementing each other. The fast-axis collimating mirror 22 collimates the light beam in the fast-axis direction, converging or adjusting the diverging light rays in the fast-axis direction into parallel light beams, reducing the fast-axis divergence angle, thereby improving the concentration and utilization rate of light energy; the slow-axis collimating mirror 23 collimates the light beam in the slow-axis direction, converging or adjusting the diverging light rays in the slow-axis direction into parallel light beams, reducing the slow-axis divergence angle, thereby improving the concentration and utilization rate of light energy; the fast-axis collimating mirror 22 and the slow-axis collimating mirror 23 are used in combination, and their combined action can achieve good collimation of the light beam in two dimensions, which is crucial for subsequent operations such as beam transmission, focusing, or coupling into an optical fiber. This can ensure the beam quality, reduce light loss, and improve the performance and efficiency of the entire semiconductor laser 100.
[0052] The wall base 14 is in the shape of a plate with a uniform thickness, and the second mounting surface 140 is also a flat surface and perpendicular to the first mounting surface 120. Each group of reflecting mirrors 30 corresponds to each group of collimating optical paths 20 one by one. Each laser chip 21 and the fast-axis collimating mirror 22 are arranged on the first mounting surface 120, and each group of reflecting mirrors 30 is arranged on the second mounting surface 140.
[0053] The second direction B can be perpendicular to the first direction A, or the second direction B may not be perpendicular to the first direction A. The present application does not make specific limitations on this.
[0054] The second direction B is parallel to the second mounting surface 140. In this embodiment, the case where the second mounting surface 140 is perpendicular to the first direction A and the second direction B is perpendicular to the first direction A is taken as an example to illustrate the solution.
[0055] In this embodiment, as Figure 2 or Figure 3 shown, the reflecting mirror group 30 includes a bottom reflecting mirror 31 and a beam-combining reflecting mirror 32 that are spaced apart along the second mounting surface 140. The bottom reflecting mirror 31 can also be arranged on the first mounting surface 120, and the slow-axis collimating mirror 23 can be arranged between the bottom reflecting mirror 31 and the beam-combining reflecting mirror 32.
[0056] Among them, the bottom reflecting mirror 31 is fixedly arranged on the first mounting surface 120 of the base 12 and is arranged close to the second mounting surface 140 on the wall base 14.
[0057] Optionally, the bottom reflecting mirror 31 is fixedly arranged on the second mounting surface 140 and is arranged close to the first mounting surface 120; or, both sides of the bottom reflecting mirror 31 are respectively fixed to the first mounting surface 120 and the second mounting surface 140.
[0058] The bottom reflecting mirror 31 and the beam-combining reflecting mirror 32 are distributed on the second mounting surface 140 along a direction perpendicular to the first mounting surface 120. The bottom reflecting mirror 31 deflects the collimated light beam along the first direction A to be transmitted in the vertical direction, so as to utilize the upper space of the first mounting surface 120 to arrange optical devices, so as to achieve a three-dimensional layout, increase the compactness of the semiconductor laser 100, and reduce the size and volume of the semiconductor laser 100.
[0059] In this embodiment, as Figure 1 shown, the laser output by the laser chip 21 is transmitted along the first direction A parallel to the first mounting surface 120, is transmitted along the vertical direction (the second direction B) after passing through the bottom reflecting mirror 31, the vertical direction is perpendicular to the first mounting surface 120, and then is lifted upward relative to the first mounting surface 120 or the second mounting surface 140 after passing through the beam-combining reflecting mirror 32 to cross the preceding beam-combining reflecting mirror 32.
[0060] Refer to Figures 1 to 3, the laser chip 21 and the fast-axis collimator 22 are arranged on the mounting surface 120 along the first direction A; as Figure 3 shown, the slow-axis collimator 23 is arranged on the second mounting surface 140 and is located between the bottom mirror 31 and the beam-combining mirror 32. The laser output by the laser chip 21 sequentially passes through the fast-axis collimator 22, the bottom mirror 31, the slow-axis collimator 23, and the beam-combining mirror 32.
[0061] The optical path between the slow-axis collimator 23 and the laser chip 21 is the sum of the optical path between the laser chip 21 and the bottom mirror 31 and the optical path between the slow-axis collimator 23 and the bottom mirror 31. Under the condition of satisfying the spatial distance required for the slow-axis collimator 23 to focus, that is, satisfying a certain optical path between the slow-axis collimator 23 and the laser chip 21, making the horizontal distance and spatial distance between the slow-axis collimator 23 and the laser chip 21 smaller can effectively reduce the size of the required base 12 and make the size of the semiconductor laser 100 smaller; moreover, since the base 12 is made of a metal material that is easy to conduct heat, the small-sized base 12 can reduce the weight of the semiconductor laser 100 as a whole.
[0062] Optionally, as Figure 1 shown, the laser chip 21, the fast-axis collimator 22, and the slow-axis collimator 23 are arranged on the mounting surface 120 along the first direction A. The laser output by the laser chip 21 sequentially passes through the fast-axis collimator 22, the slow-axis collimator 23, the bottom mirror 31, and the beam-combining mirror 32.
[0063] Among them, the multi-path mirror group 30 all adopts a three-dimensional arrangement method, which is beneficial to reducing the size and volume of the semiconductor laser 100, and is also beneficial to its light weight and improving the heat dissipation performance.
[0064] As Figure 2 shown, each beam-combining mirror 32 needs to turn each collimated beam by a certain angle in a plane parallel to the second mounting surface 140 relative to the second direction B. This turning angle is named the turning angle α; as Figure 4 shown, it also needs to be lifted by an angle β relative to the second mounting surface 140. This lifting angle is named the lifting angle β. Due to the effect of the lifting angle β, the collimated beam can obliquely cross the adjacent beam-combining mirror 32 when reflected by the beam-combining mirror 32, so that the previous beam-combining mirror 32 will not obstruct its optical path transmission, and each collimated beam can be arranged at intervals in the fast-axis direction along the same angular direction to form a collimated beam group, as Figure 3 shown, but it will cause the slow axis of the collimated beam to tilt (deflect).
[0065] Oblique prism 35 has multiple functions: The first function is that since the collimated beam group emitted from each beam combining mirror 32 has a lift angle β relative to the second mounting surface 140, it is necessary to correct the lift angle β. As Figure 4 shown, so that the collimated beam group can be emitted parallel to the first mounting surface 120 and the second mounting surface 140; The second function is to solve the problem of slow axis tilt, so that each collimated beam with slow axis tilt is restored to a state where the slow axis is parallel to the first mounting surface 120 and the second mounting surface 140, in order to increase the beam combining density.
[0066] As Figure 5 shown, it is a three-dimensional structural schematic diagram of the oblique prism 35. The oblique prism 35 includes an incident surface S1 (the shaded surface facing the incident light) and an exit surface S2 (the surface opposite to S1); The function of solving the slow axis tilt is described from a plane P1 parallel to the second mounting surface 140 (that is, observing the oblique prism 35 from the front view direction), and the function of correcting the lift angle β is described from a plane P2 perpendicular to the second mounting surface 140 and parallel to the optical axis (that is, observing the oblique prism 35 from the top view direction).
[0067] As Figure 6 shown, in the plane P1, the incident surface S1 of the oblique prism 35 and the turning angle α satisfy ζ = 90 - α / 2 --- Equation 【1】; As Figure 7 shown, in the plane P2, the incident surface S1 of the oblique prism 35 and the lift angle β satisfy sin(90 + β / 2 - δ) = n * sin(90 - δ) ----- Equation 【2】; where β is the lift angle, α is the turning angle, ζ is the angle between the incident surface S1 and the optical axis in the plane P1; δ is the angle between the incident surface S1 and the second mounting surface 140 in the plane P2, and n is the ratio of the refractive index of the oblique prism 35 to the refractive index of the internal gas environment during laser packaging.
[0068] When the incident surface S1 of the oblique prism 35 simultaneously satisfies the above relationships, when each collimated beam is incident on the incident surface S1, the incident surface S1 can simultaneously perform tilt compensation and correct the lift, so that the slow axis of each collimated beam is corrected and simultaneously emitted along a third direction C parallel to the first mounting surface 120 and the second mounting surface 140, obtaining a densely arranged collimated beam group, and improving the quality of the laser beam transmitted in the output optical fiber after convergence.
[0069] The semiconductor laser 100 provided by the present application arranges a wall base 14 on the base 12 to utilize the wall base 14 to arrange the mirror group 30, so that the collimated light beam transmitted along the first mounting surface 120 is turned to be transmitted along a direction parallel to the second mounting surface 140. The three-dimensional space above the first mounting surface 120 is utilized to arrange the mirror group 30 and even the optical devices in a part of the collimated optical path group 20, and the three-dimensional space above the first mounting surface 120 is utilized to accommodate the optical path. In this way, the overall structure of the semiconductor laser 100 is more compact, and its space size and volume are reduced. Further, each mirror group 30 is arranged on the second mounting surface 140 of the wall base 14, and the beam combining mirror 32 is also used to lift the corresponding collimated light beam, so that the collimated light beam can cross the previous beam combining mirror 32, avoiding the previous mirror group 30 blocking the collimated light beam reflected by the subsequent mirror group 30. Moreover, by utilizing the assembly relationship between the mirror group 30 and the second mounting surface 140, the lifting angles of the collimated light beams can be kept consistent, ensuring the parallelism between the collimated light beams. And the rhomboid prism 35 can make each collimated light beam exit along a third direction C parallel to the first mounting surface 120 and the second mounting surface 140, so as to improve the beam combining density and the quality of the laser beam transmitted in the output optical fiber after convergence.
[0070] In some embodiments, as Figure 2 shown, the base 12 includes a bottom wall 121 provided with a first mounting surface 120 and a side wall 122 connected around the bottom wall 121, wherein the wall base 14 can be the side wall 122 connected to one side of the bottom wall 121. By setting the side wall 122 of the base 12 as the wall base 14, the integration degree of the package 10 can be further improved, the space volume occupied by the wall base 14 can be reduced, the structural compactness of the semiconductor sensor 100 can be further improved, and the volume of the semiconductor sensor 100 can be reduced.
[0071] Optionally, as Figure 1 shown, the wall base 14 is connected to a non-edge area of the bottom wall 121 and is isolated from the side wall 122 of the base 12. For example, the wall base 14 is detachably connected to the bottom wall 121, and the isolation between the wall base 14 and the side wall 122 is convenient for disassembly.
[0072] Optionally, the base 12 only includes the bottom wall 121, and the wall base 14 can be connected to a non-edge area of the bottom wall 121, or the wall base 14 can be connected to the edge of the bottom wall 121.
[0073] Optionally, as Figure 1 shown, the focusing lens group 40 is arranged on the optical path of the collimated light beam transmitted by the rhomboid prism 35, and the optical axis of the focusing lens group 40 is parallel to the third direction C, that is, the outgoing direction of the focusing lens group 40 is the same as the third direction C, and the output optical fiber 50 emits light along the third direction C.
[0074] Referring to Figure 3, the semiconductor laser 100 may further include a main optical path mirror group 60 disposed on the optical path between the rhombic prism 35 and the focusing lens group 40 for adjusting the transmission direction of the collimated light beam after passing through the rhombic prism 35, wherein the outgoing direction of the focusing lens group 40 is parallel to the first direction A, or the focusing lens group 40 is located above the multi-path collimated optical path group 20 and the outgoing direction of the focusing lens group 40 is opposite to the third direction C.
[0075] The package 10 further includes an upper cover (not shown in the figure) connected to the base 12. The upper cover is at least connected to the base 12 to form a closed housing. The collimated optical path group 20, the mirror group 30, the rhombic prism 35, the focusing lens group 40 and the main optical path mirror group 60 are all disposed in the housing. One end of the output optical fiber 50 is located in the housing and behind the focusing lens group 40. The focusing lens group 40 can compress and couple the laser beam into the output optical fiber 50 to form a laser transmitted in the optical fiber.
[0076] Wherein, the main optical path mirror group 60 includes at least one mirror. The main optical path mirror group 60 is used to change the transmission direction of the optical path and can reflect the optical path to any side of the package 10, that is, light can be emitted from any side surface of the semiconductor laser 100.
[0077] Optionally, the laser chip 21 is arranged on the first mounting surface 120 of the base 12. The main optical path mirror group 60, the rhombic prism 35, the focusing lens group 40 and the output optical fiber 50 are arranged on the surface of the upper cover facing the first mounting surface 120. The focusing lens group 40 is also located above the collimated optical path group 20 to make full use of the three-dimensional space on the first mounting surface 120. The main optical path mirror group 60 can reflect the optical path to the surface of the upper cover of the package 10, so as to further make full use of the internal space of the package 10 and further increase the compactness of the semiconductor laser 100 and reduce the overall volume. Wherein, the optical axis of the focusing lens group 40 can be opposite to the third direction C or opposite to the first direction A, so that the output optical fiber 50 can emit light from the back or side of the semiconductor laser 100.
[0078] Optionally, referring to Figures 9 to 12 , the rhombic prism 35 can also turn and reflect the collimated light beam. A reflecting surface S3 is further arranged between the incident surface S1 and the outgoing surface S2 of the rhombic prism 35, wherein the incident surface S1 and the outgoing surface S2 are adjacent.
[0079] Relative to the need to add a mirror ([[]] Figure 9Only by using the dummy mirror within the dashed box where the rhombic prism 35 is located can the same steering effect be achieved. In this embodiment, a reflecting surface S3 is provided on the idle surface of the rhombic prism 35, which can not only reduce the number of optical elements and the difficulty of component assembly and adjustment, but also make the optical path structure more compact compared with the scheme of setting a mirror behind the rhombic prism, effectively reducing the volume of the semiconductor laser 100.
[0080] Specifically, in the rhombic prism 35, when each collimated beam is incident on the reflecting surface S3, as Figure 11 and Figure 12 shown, the reflecting surface S3 deflects the collimated beam by -α or 180° - α and makes the collimated beam exit perpendicularly from the exit surface S2.
[0081] Refer to Figure 8 and Figure 9 , Figure 9 which is a schematic structural diagram of another embodiment of the semiconductor laser provided by this application. In some other embodiments, the base 12 includes a bottom wall 121 provided with a first mounting surface 120, and the wall seat 14 is a partition connected to the bottom wall 121, thereby dividing the first mounting surface 120 of the bottom wall 121 into two mounting areas. There are second mounting surfaces 140 on both sides of the wall seat 14, and multiple collimated optical path groups 10 and corresponding multiple mirror groups 20 are symmetrically arranged on both sides of the wall seat 14. A rhombic prism 35 is provided on the exit optical path of each group of multiple mirror groups 20.
[0082] In other words, two sets of laser chips 21 are distributed in the two mounting areas divided by the wall seat 14. The laser output by one set of laser chips 21 is transmitted along the first direction A, and the laser output by the other set of laser chips 21 is transmitted along the direction opposite to the first direction A. The lasers output by the two sets of laser chips 21 are each transmitted vertically after passing through the bottom mirror 31, and then transmitted to the rhombic prism 35 after passing through the beam combining mirror 32 respectively.
[0083] The second mounting surfaces 140 on both sides of the wall seat 14 are mirror images of each other. The focusing lens group 40 can be provided on the optical path of the collimated beam transmitted by the rhombic prism 35, and the optical axis of the focusing lens group 40 can be parallel to the symmetry axis of the wall seat 14.
[0084] As a partition connected to the bottom wall 121, the wall seat 14 can increase the structural strength of the housing 10 and the base 12, prevent beam distortion caused by the deformation of the housing 10, and the wall seat 14 can use lightweight materials without considering heat dissipation performance, which is beneficial to the lightweight design of the semiconductor laser 100.
[0085] The pedestal 14 can be detachably connected to the bottom wall 121, which facilitates the maintenance and replacement of the optical devices provided thereon; when the pedestal 14 and the optical devices thereon are removed, the base 12 will not deform, ensuring the quality of the laser output beam; in addition, when the optical devices are being maintained and replaced, they are far away from the laser chip 21, which can effectively prevent the debris generated during maintenance and replacement from damaging the laser chip 21.
[0086] The laser chips 21 on both sides of the pedestal 14 emit light in opposite directions, so that the two laser chips 21 are far apart and are not prone to thermal crosstalk. The heat dissipation conditions of the laser chips 21 are better, which is beneficial to reducing the temperature of the laser chips 21 and improving the reliability of the product. In addition, due to the symmetric arrangement, the optical paths of the light beams emitted by the laser chips 21 on each side to reach the coupling unit are similar, and the optical path difference between the two is small, so that the coupling effect can be better.
[0087] Optionally, the emission direction of the focusing lens group 40 is the same as the third direction C, and each multi-path collimation optical path group 20 and multi-path mirror group 30 correspond to the same group of focusing lens groups 40, or each multi-path collimation optical path group 20 and multi-path mirror group 30 correspond to the same group of focusing lens groups 40.
[0088] Optionally, the optical axis of the focusing lens group 40 is parallel to the axis of symmetry of the pedestal 14, and the collimated light beams output from both sides of the pedestal 14 are all transmitted to the focusing lens group 40. Alternatively, the number of the focusing lens groups 40 is two, which respectively correspond to the collimated light beams on one side of the pedestal 14, and correspondingly, an input optical fiber 50 is provided behind each focusing lens group 40.
[0089] Optionally, referring to Figure 8 , the semiconductor laser 100 further includes a secondary optical path mirror 71 and a beam combining prism 72. The beam combining prism 72 is disposed on the outgoing optical path of one rhombic prism 35, and the secondary optical path mirror 71 is disposed on the outgoing optical path of the other rhombic prism 35. The secondary optical path mirror 71 is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism 72, so that the two collimated light beams are combined by the beam combining prism 72.
[0090] Specifically, the light beam emitted by one group of laser chips 21 is reflected by the beam combining mirror 32 and then enters an incident surface of the beam combining prism 72 through the rhombic prism 35; the light beam emitted by the other group of laser chips 21 is reflected by the beam combining mirror 32 and then transmitted to the secondary optical path mirror 71 through the other rhombic prism 35. After passing through the secondary optical path mirror 71, the incident direction is changed and it is incident on the other incident surface of the beam combining prism 72 along the same direction or the opposite direction of the first direction A. The beam combining prism 72 combines the two light beams into one beam and transmits it to the focusing lens group 40.
[0091] Further, the semiconductor laser 100 may further include a main optical path mirror group 60. The main optical path mirror group 60 is disposed on the optical path between the rhombic prism 35 and the focusing lens group 40, specifically, it may be disposed on the optical path between the beam combining prism 72 and the focusing lens group 40, and is used to adjust the transmission direction of the collimated beam after being reflected by the multi-path mirror group 30. The outgoing direction of the focusing lens group 40 is parallel to the first direction A, or the focusing lens group 40 is located above the multi-path collimated optical path group 20 and the outgoing direction of the focusing lens group 40 is opposite to the third direction C, and light can also be emitted from any side of the semiconductor laser 100, which will not be elaborated here.
[0092] Optionally, as Figures 9 to 12 shown, the rhombic prism 35 can also replace the secondary optical path mirror 71, that is, the rhombic prism 35 corresponding to the optical path can also turn and reflect the collimated beam. A reflecting surface S3 is further disposed between the incident surface S1 and the outgoing surface S2 of the rhombic prism 35, where the incident surface S1 is adjacent to the outgoing surface S2. In this rhombic prism 35, when each collimated beam is incident on the reflecting surface S3, as Figure 10 and Figure 11 shown, the reflecting surface S3 deflects the collimated beam by -α or 180° - α and makes the collimated beam exit perpendicularly to the outgoing surface S2. Therefore, the setting of the optical path mirror 71 can be reduced, making the optical path structure more compact and effectively reducing the volume of the semiconductor laser 100.
[0093] Different from the prior art, the present application discloses a semiconductor laser. By providing a wall base on the base to arrange the mirror group using the wall base, the collimated beam transmitted along the first mounting surface is turned to be transmitted along a direction parallel to the second mounting surface. The three-dimensional space above the first mounting surface is used to arrange the mirror group and even the optical devices in part of the multi-path collimated optical path group, and the three-dimensional space above the first mounting surface is used to accommodate the optical path, so that the overall structure of the semiconductor laser is more compact, reducing its space size and volume; the multi-path collimated optical path group is installed on the same mounting surface, and the bottom wall of the base can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall and is also beneficial to setting the cooling water channels in the bottom wall, and the heat dissipation of each laser chip is more uniform; further, each path of the mirror group is arranged on the second mounting surface of the wall base, and the beam combining mirror is also used to lift the corresponding collimated beam, so that the collimated beam can cross the previous beam combining mirror, avoiding the previous mirror group from blocking the collimated beam reflected by the subsequent mirror group, and using the assembly relationship between the mirror group and the second mounting surface, the lifting angles of each collimated beam can be kept consistent, ensuring the parallelism between each collimated beam, and the rhombic prism can make each collimated beam exit along the third direction parallel to the first mounting surface and the second mounting surface, reducing the adjustment difficulty of the beam, improving the beam combining density, and improving the quality of the laser beam transmitted in the output optical fiber after convergence.
[0094] The above are only embodiments of the present application, and do not thereby limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall similarly be included within the patent protection scope of the present application.
Claims
1. A semiconductor laser, characterized in that: The semiconductor laser comprises: The tube shell comprises a base and a wall base, wherein the base has a first mounting surface, and the wall base is arranged on the first mounting surface of the base and has a second mounting surface perpendicular to the first mounting surface; A multi-path collimated light path group, all arranged on the first mounting surface, for emitting a multi-path collimated light beam along a first direction parallel to the first mounting surface; A multi-path reflector group, each comprising a bottom reflector and a beam combining reflector arranged on the second mounting surface at intervals along the second direction, each reflector group being arranged corresponding to each collimated light path group, the bottom reflector reflecting the collimated light beam transmitted along the first direction to be transmitted to the beam combining reflector along the second direction parallel to the second mounting surface, and the reflecting surface of each beam combining reflector being arranged on the second mounting surface at a preset angle, so that the rear beam combining reflector is used to lift the corresponding collimated light beam to pass over the front beam combining transmitting mirror; An oblique square prism is arranged on the outgoing light path of the multi-path reflector group, and is used to perform tilt compensation on each of the collimated light beams so that each of the collimated light beams is emitted along a third direction parallel to the first mounting surface and the second mounting surface.
2. The semiconductor laser according to claim 1, characterized in that The beam combining reflectors are arranged at the same height, and the first mounting surface and the second mounting surface are both planes.
3. The semiconductor laser according to claim 1, characterized in that The incident surface of the rhombus prism satisfies the following equations [1] and [2]: ζ=90°-α / 2----------------------------------Formula [1]; sin(90°+β-δ)=n*sin(90-δ)------------Formula [2]; Among them, α is represented by the steering angle of the collimated light beam made by the reflector group on the plane parallel to the second mounting surface; β is represented by the angle at which the collimated light beam is lifted relative to the second mounting surface by the reflector group; ζ is represented by the angle between the incident surface and the collimated light beam in the plane parallel to the second mounting surface; δ is represented by the angle between the incident surface and the second mounting surface in the plane perpendicular to the second mounting surface and parallel to the optical axis; n is represented by the ratio of the refractive index of the rhombus prism to the refractive index of its surrounding environment.
4. The semiconductor laser according to claim 3, characterized in that A reflecting surface is further arranged between the incident surface and the emitting surface of the rhombus prism. When each of the collimated light beams is incident on the reflecting surface, it is deflected by -α in a plane parallel to the first mounting surface.
5. The semiconductor laser according to claim 3, characterized in that A reflecting surface is also arranged between the incident surface and the exit surface of the rhombus prism. When each of the collimated light beams is incident on the reflecting surface, it is deflected by 180°-α in a plane parallel to the first mounting surface.
6. The semiconductor laser according to claim 1, characterized in that The base includes a bottom wall provided with the mounting surface, and the wall seat is a side wall connected to one side of the bottom wall; or The wall seat is connected to the non-edge area of the bottom wall.
7. The semiconductor laser according to claim 1, characterized in that The base includes a bottom wall provided with the mounting surface, the wall seat is a partition connected to the bottom wall, thereby dividing the mounting surface of the bottom wall into two mounting areas, and multiple parallel second mounting surfaces are provided on both sides of the wall seat, and the multi-path collimating light path group and the corresponding multi-path reflector group are symmetrically arranged on both sides of the wall seat, and the rhombus prism is provided on the output light path of each group of the multi-path reflector group.
8. The semiconductor laser according to claim 7, characterized in that The semiconductor laser also includes a secondary light path reflector and a beam combining prism. The beam combining prism is arranged on an outgoing light path of one of the rhombus prisms, and the secondary light path reflector is arranged on an outgoing light path of another rhombus prism. The secondary light path reflector is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism, so that the two collimated light beams are combined through the beam combining prism.
9. The semiconductor laser according to any one of claims 6 to 8, characterized in that: The semiconductor laser further comprises a focusing lens group, and the focusing lens group is arranged on the optical path of the collimated light beam transmitted from the rhombus prism; The emission direction of the focusing lens assembly is the same as the third direction; or The semiconductor laser also includes a main light path reflector group, which is arranged on the light path between the rhombus prism and the focusing lens group, and is used to adjust the transmission direction of the light path of the collimated light beam after passing through the rhombus prism, wherein the emission direction of the focusing lens group is parallel to the first direction, or the focusing lens group is located above the multi-path collimated light path group and the emission direction of the focusing lens group is opposite to the third direction.
10. The semiconductor laser according to claim 1, characterized in that The collimating optical path group comprises a laser chip, a fast-axis collimating mirror and a slow-axis collimating mirror, wherein the laser chip, the fast-axis collimating mirror and the slow-axis collimating mirror are arranged on the first mounting surface along the first direction, and the laser output by the laser chip passes through the fast-axis collimating mirror, the slow-axis collimating mirror, the bottom reflector and the beam combining reflector in sequence; or The laser chip and the fast-axis collimator are arranged on the first mounting surface along the first direction, the slow-axis collimator is arranged on the second mounting surface and is located between the bottom reflector and the beam-combining reflector, and the laser output by the laser chip passes through the fast-axis collimator, the bottom reflector, the slow-axis collimator and the beam-combining reflector in sequence.
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