IGBT power module and energy storage converter

Abstract

The utility model discloses an IGBT power module and an energy storage converter. The IGBT power module comprises a first heat dissipation plate, a second heat dissipation plate, a third heat dissipation plate and a busbar plate connected with a capacitor, wherein at least one side surface of each of the three heat dissipation plates is provided with an IGBT device group; the first heat dissipation plate, the second heat dissipation plate and the third heat dissipation plate are parallel to one another, one end of the IGBT device group on the first heat dissipation plate and one end of the IGBT device group on the second heat dissipation plate are respectively connected with the busbar plate, and the other end of the IGBT device group on the first heat dissipation plate and the other end of the IGBT device group on the second heat dissipation plate are respectively and electrically connected with the IGBT device group on the third heat dissipation plate. The IGBT power module provided by the utility model has good heat dissipation efficiency, is arranged regularly on the basis of ensuring a good heat dissipation effect, facilitates equidistant connection of the IGBT device groups on different heat dissipation plates, reduces the difference value of the sizes of the wire rows for connecting the IGBT device groups and the difference value of the current transmission rates of the first and second IGBT device groups, improves the performance of the module, and improves the reliability of the module. And the requirements of the IGBT power module in the prior art on the two aspects of heat dissipation and arrangement are considered.

Description

Technical Field

[0001] The present application relates to the technical field of converters, and particularly relates to an IGBT power module and an energy storage converter including the IGBT power module. Background Art

[0002] A PCS (Power Conversion System) energy storage converter is a device that can control the charging and discharging processes of a storage battery, perform AC-DC conversion, and directly supply power to AC loads in the absence of a power grid. Its core component includes an IGBT power module. The IGBT power module, as the core component for energy conversion and transmission in the PCS energy storage converter system, includes at least three groups of IGBT (Insulated Gate Bipolar Transistor) device groups that need to be circuit-connected, and multiple IGBT devices can be arranged in each IGBT device group. During operation, the IGBT devices generate heat. To avoid overheating, the devices are installed on a heat sink.

[0003] The heat dissipation effect is an important factor affecting the operation efficiency of the module. If you want to improve the heat dissipation effect, the heat sink needs to be set proportionally or in excess according to the number of IGBT devices. However, the setting of multiple heat sinks also makes the arrangement between different heat sinks and the arrangement of IGBT devices on the heat sink particularly important. If the arrangement is not reasonable, it will cause the line lengths for electrical connection between different IGBT device groups to be different, resulting in inconsistent and unequal current transmission paths, which will affect the performance of the module. Summary of the Utility Model

[0004] In view of this, the embodiments of the present application are committed to providing an IGBT power module, which has good heat dissipation efficiency, and on the basis of ensuring good heat dissipation effect, is regularly arranged, which is conducive to equidistant connection of IGBT device groups on different heat sinks, reducing or even eliminating the difference in the line row size for connecting IGBT device groups and the difference in the current transmission rate between the first and second IGBT device groups, improving the performance of the module, and also taking into account the requirements of the IGBT power module in terms of heat dissipation and arrangement in the prior art.

[0005] The present application provides an IGBT power module, including a first heat sink, a second heat sink, a third heat sink, and a busbar plate connected with a capacitor. IGBT device groups are arranged on at least one surface of each of the three heat sinks;

[0006] The first heat sink, the second heat sink, and the third heat sink are arranged parallel to each other;

[0007] One end of the IGBT device group on the first heat dissipation plate and one end of the IGBT device group on the second heat dissipation plate are respectively connected to the busbar plate, and the other ends are respectively electrically connected to the IGBT device group on the third heat dissipation plate.

[0008] In a possible implementation manner, the first heat dissipation plate and the second heat dissipation plate are arranged along a first direction, and the third heat dissipation plate is located on one side of the first heat dissipation plate and the second heat dissipation plate in a second direction; and / or, the busbar plate is located on one side of the first heat dissipation plate and the second heat dissipation plate in the second direction away from the third heat dissipation plate.

[0009] In a possible implementation manner, the thickness directions of the first heat dissipation plate, the second heat dissipation plate, and the third heat dissipation plate are all the first direction, and the first heat dissipation plate and the second heat dissipation plate are located on both sides of the third heat dissipation plate in the first direction.

[0010] In a possible implementation manner, the first heat dissipation plate and the second heat dissipation plate have a gap in the first direction, and the projection of the third heat dissipation plate in the second direction is misaligned with and partially overlaps the first heat dissipation plate, and is also misaligned with and partially overlaps the second heat dissipation plate.

[0011] In a possible implementation manner, the first heat dissipation plate and the second heat dissipation plate have a gap in the first direction, and the projection of the third heat dissipation plate in the second direction is located within the gap and has a gap with the first heat dissipation plate and also has a gap with the second heat dissipation plate.

[0012] In a possible implementation manner, the IGBT device group on the first heat dissipation plate is connected to the busbar plate through a first wire row and is connected to the IGBT device group on the third heat dissipation plate through a second wire row, and the IGBT device group on the second heat dissipation plate is connected to the busbar plate through a third wire row and is connected to the IGBT device group on the third heat dissipation plate through a fourth wire row;

[0013] The first wire row and the third wire row are symmetrically arranged about the third heat dissipation plate in the first direction, and the second wire row and the fourth wire row are symmetrically arranged about the third heat dissipation plate in the first direction.

[0014] In a possible implementation manner, the thickness direction of the busbar plate is the second direction, and both the first wire row and the third wire row include a first segment arranged along the second direction and connected to the IGBT device group and a second segment arranged along the second direction and connected to the busbar plate.

[0015] In a possible implementation, the busbar board includes a main board and a connecting board located at one side of the main board and arranged at an angle to the main board, and the first line bus and the third line bus are both connected to the connecting board.

[0016] In a possible implementation, the mainboard is perpendicular to the connecting plate, and the first heat sink and the mainboard are arranged parallel to each other; the first heat sink, the second heat sink and the third heat sink are located on a side of the connecting plate facing the mainboard, or the first heat sink, the second heat sink and the third heat sink are located on a side of the connecting plate facing away from the mainboard.

[0017] In a possible implementation manner, the IGBT device group on the first heat sink is located on a side of the first heat sink close to the second heat sink, and the IGBT device group on the second heat sink is located on a side of the second heat sink close to the first heat sink;

[0018] Along the first direction, the IGBT device group on the third heat sink is located in the interval between the first heat sink and the second heat sink, and the distance between the third heat sink and the first heat sink is equal to the distance between the third heat sink and the second heat sink.

[0019] In a possible implementation manner, the first IGBT device group and the second IGBT device group are respectively disposed on both side surfaces in the thickness direction of the first heat sink, the first IGBT device group and the second IGBT device group are also respectively disposed on both side surfaces in the thickness direction of the second heat sink, and a group of third IGBT device groups are respectively disposed on both side surfaces in the thickness direction of the third heat sink.

[0020] The first IGBT device group and the second IGBT device group on the first heat sink are respectively connected to the busbar plate through the first wire row, and are respectively electrically connected to the third IGBT device group on one side surface of the third heat sink through the second wire row. The first IGBT device group and the second IGBT device group on the second heat sink are respectively connected to the busbar plate through the third wire row, and are respectively electrically connected to the third IGBT device group on the other side surface of the third heat sink through the fourth wire row.

[0021] In a possible implementation, the second line row includes a second A row and a second B row, the second A row is flat and parallel to the first heat sink, the second B row includes a B1 bending section, a B2 bending section, and a B3 bending section connected in sequence, and the B1 bending section and the B3 bending section are both parallel to the first heat sink;

[0022] The fourth row of lines includes a fourth row A and a fourth row B. The fourth row of lines is in a flat plate shape and parallel to the first heat dissipation plate. The fourth row B includes a B3 bending section, a B4 bending section, and a B5 bending section connected in sequence. Both the B3 bending section and the B5 bending section are parallel to the first heat dissipation plate.

[0023] The present application also provides an energy storage converter, which includes a cabinet body, and a DC fuse, a DC disconnector, an IGBT power module, a reactor, an AC filter capacitor, and an AC circuit breaker that are arranged in the cabinet body and connected in sequence. The IGBT power module is the IGBT power module described in any one of the above.

[0024] The IGBT power module provided by the present application includes three heat dissipation plates. The IGBT device groups are distributed on the three heat dissipation plates to form three module units that dissipate heat separately, having a good heat dissipation structure, which can ensure the heat dissipation effect of the high-power IGBT module. At the same time, the three heat dissipation plates are arranged in parallel and regularly, which can make the distance difference between the connection ends of the IGBT device groups on the third heat dissipation plate and the first and second heat dissipation plates small or even equal, facilitating the equidistant connection of the IGBT device groups on different heat dissipation plates, reducing the difference in the size of the row of lines connecting the IGBT device groups and the difference in the current transmission rate of the first and second IGBT device groups, and improving the module performance.

[0025] In this arrangement, further, the busbar plate provided with a capacitor and the first ends of the IGBT device groups on the first and second heat dissipation plates can be set at equal distances, shortening the difference in the size of the row of lines required to connect the busbar plate and the IGBT device groups, and further improving the module performance. Description of the Drawings

[0026] Figure 1 The figure shows a schematic diagram of the IGBT power module in the third type of embodiment of the present application;

[0027] Figure 2 The figure shows a schematic diagram of the IGBT power module in the first type of embodiment of the present application;

[0028] Figure 3 The figure shows a first-angle schematic diagram of the IGBT power module in the fourth type of embodiment of the present application;

[0029] Figure 4 The figure shows a second-angle schematic diagram of the IGBT power module in the fourth type of embodiment of the present application.

[0030] Figures 1 - 4 In the figure:

[0031] 1. First heat sink; 2. Second heat sink; 3. Third heat sink; 4. First IGBT device group; 4'. First IGBT device group A; 4". First IGBT device group B; 5. Second IGBT device group; 5'. Second IGBT device group A; 5". Second IGBT device group B; 6. Third IGBT device group; 6'. Third IGBT device group A; 6". Third IGBT device group B; 7. Busbar board; 71. Main board; 72. Connection board; 8. First row of wires; 8a. First row A; 8b. First row B; 9. Second row of wires; 9a. Second row A; 9b. Second row B; 10. Third row of wires; 10a. Third row A; 10b. Third row B; 11. Fourth row of wires; 11a. Fourth row A; 11b. Fourth row B. Detailed implementation mode

[0032] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0033] It should be noted that the descriptions of relative position relationships in the present application, such as "parallel" and "perpendicular", all cover the error ranges. For example, "parallel" actually means "parallel or substantially parallel", "perpendicular" actually means "perpendicular or substantially perpendicular", "same direction" actually means "same direction or substantially the same direction", and so on.

[0034] Please refer to the attached Figure 1 - attached Figure 4 , the embodiments of the present application provide an IGBT power module, which includes one or more power units, as well as a busbar board 7 and a plurality of capacitors. The plurality of capacitors are arranged on the busbar board 7, such as on the side of the busbar board 7 facing away from each heat sink, and the busbar board 7 is electrically connected to the power unit. The busbar board 7 has a plurality of DC terminals for connecting the power unit to a DC circuit. The plurality of DC terminals include a P terminal, an N terminal, and an O terminal. The P terminal can be electrically connected to the positive electrode of the DC power supply or DC load in the energy storage system. The N terminal can be electrically connected to the negative electrode of the DC power supply or DC load. The O terminal can be connected to the neutral point in the energy storage system, that is, the O terminal can be grounded.

[0035] By way of example only, the busbar board 7 may include a stacked first electrode plate, a second electrode plate, and a third electrode plate. The second electrode plate may be located between the first electrode plate and the third electrode plate. The third electrode plate may be located on the side of the first electrode plate away from the three heat sinks. The first electrode plate may provide the N terminal, the second electrode plate may provide the O terminal, and the third electrode plate may provide the P terminal.

[0036] Each power unit includes three IGBT device groups, which can be denoted as the first IGBT device group 4, the second IGBT device group 5, and the third IGBT device group 6. Each IGBT device group includes at least one IGBT device. Of course, in fact, each IGBT device group will include multiple IGBT devices. Each power unit performs the inversion of direct current and alternating current. Therefore, two of the three IGBT device groups in each power unit (such as the first IGBT device group 4 and the second IGBT device group 5) are connected to the busbar board 7 (multiple IGBT devices in each IGBT device group are connected to the O, P, and N DC terminals on the busbar board 7), connecting the DC circuit, such as serving as the input side of the power module. The other IGBT device group (such as the third IGBT device group 6) is connected to the AC circuit (such as having three AC terminals and connected to the U, V, and W three phases of the alternating current), and can be used to output alternating current, serving as the output side of the module power. Of course, the inversion direction can also be reversed, changing three-phase alternating current into direct current. For example, the third IGBT device group 6 is connected to the AC circuit but is the input side, and the first IGBT device group 4 and the second IGBT device group 5 are connected to the DC circuit but are the output side, and the power module inverts the input alternating current into direct current for output. The principle of bidirectional inversion belongs to the publicly known technology in the field and will not be elaborated here too much.

[0037] Specifically, each IGBT device group has two connection terminals; the first connection terminal of the first IGBT device group 4 and the first connection terminal of the second IGBT device group 5 are both connected to the busbar board 7, the second connection terminal is connected to the first connection terminal of the third IGBT device group 6, and the second connection terminal of the third IGBT device group 6 is used to connect to other electrical components.

[0038] In this application, the IGBT power module further includes three heat dissipation plates (not limited to only three heat dissipation plates, and may also include other heat dissipation plates in addition to these three), denoted as the first heat dissipation plate 1, the second heat dissipation plate 2, and the third heat dissipation plate 3. Among them, the first heat dissipation plate 1 and the second heat dissipation plate 2 can be an integral structure or a split structure. Each IGBT device group (at least three IGBT device groups) is distributed on the three heat dissipation plates, such as being attached to the plate surface of the heat dissipation plate, forming three module units that dissipate heat separately, denoted as the first module unit, the second module unit, and the third module unit. With such a setting, the IGBT power module has a good heat dissipation structure and good heat dissipation effect, and can be appropriately set in terms of heat dissipation and high power. For example, when only one power unit, that is, three IGBT device groups, is set, one IGBT device group occupies one heat dissipation plate, which can significantly improve the heat dissipation performance of the entire module; when IGBT device groups are arranged on both side surfaces of each heat dissipation plate, the overall power of the entire power module is large, with at least two power units, and at the same time, it can also ensure timely heat dissipation of each IGBT device. Therefore, effective heat dissipation can be achieved for high-power IGBT power modules.

[0039] Among the three module units, the first module unit and the second module unit are both electrically connected to the third module unit, that is, one end of the IGBT device group on the first heat dissipation plate and the IGBT device group on the second heat dissipation plate are respectively connected to the busbar plate, and the other end is respectively electrically connected to the IGBT device group on the third heat dissipation plate. For example, when performing DC-to-AC inversion, the IGBT device groups of the first module unit and the second module unit are the input side of the power module, and the IGBT device group of the third module unit is the output side.

[0040] With such a setting, the three heat dissipation plates are arranged regularly, which can make the distance difference between the connection end of the IGBT device group on the third heat dissipation plate and the first and second heat dissipation plates small or even equal, facilitating the equidistant connection of the IGBT device groups on different heat dissipation plates, reducing the difference in the wire row size for connecting the IGBT device groups and the difference in the current transmission rate between the first and second IGBT device groups, and improving the module performance.

[0041] Furthermore, in this arrangement, the busbar plate provided with capacitors and the first ends of the IGBT device groups on the first and second heat dissipation plates can be set at equal distances, shortening the difference in the wire row size required to connect the busbar plate and the IGBT device groups, and further improving the module performance.

[0042] For example, the first heat dissipation plate 1 and the second heat dissipation plate 2 are arranged along the first direction. The first heat dissipation plate 1 and the second heat dissipation plate 2 are connected in the first direction, or are of an integral structure, or have a spacing. The third heat dissipation plate 3 is located on one side of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the second direction. At the same time, the three heat dissipation plates extend in the same direction, all extending along the third direction. A plurality of IGBT devices in the same IGBT device group on each heat dissipation plate are arranged along the third direction. In addition, the three heat dissipation plates are parallel to each other, that is, the thickness directions are the same, and can all be the first direction or all be the second direction. The first direction and the second direction are two non-parallel directions arranged at an angle. Preferably, the first direction and the second direction are perpendicular.

[0043] In this way, the three heat dissipation plates are arranged neatly and closely, with a short and regular distance from each other. The first end of the third heat dissipation plate will be synchronously adjacent to the ends where the other two heat dissipation plates are close to or connected to each other. For example, the first end of the IGBT device group on it is located between the IGBT device groups on the other two heat dissipation plates, and can be adjacent to the two IGBT device groups that need to be connected at the same time. It can enable the IGBT device groups on the three heat dissipation plates to be connected in a short distance, shorten the length of the bus bar required to connect different IGBT device groups, and shorten the current transmission path.

[0044] The bus bar plate 7 can be located on the side of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the second direction away from the third heat dissipation plate 3, or can be located at other positions, such as adjacent to the first connection ends of the IGBT device groups on the first heat dissipation plate 1 and the second heat dissipation plate 2, which can also shorten the distance between the connection end of the bus bar plate 7 and the IGBT device group, reduce the size of the required bus bar, effectively shorten the current transmission path, and reduce the resistance and stray inductance.

[0045] In a preferred embodiment, as Figure 1 shown, the bus bar plate 7 is located on the side of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the second direction away from the third heat dissipation plate 3, that is, the bus bar plate 7 and the third heat dissipation plate 3 are respectively located on both sides of the first heat dissipation plate 1 and the second heat dissipation plate 2 arranged side by side in the second direction. In this way, the first IGBT device group 4 and the second IGBT device group 5 can be arranged on the first heat dissipation plate 1 and the second heat dissipation plate 2, and the third IGBT device group 6 is arranged on the third heat dissipation plate; it can also be said that the IGBT device group on the third heat dissipation plate 3 is the third IGBT device group 6, and the IGBT device groups on the first heat dissipation plate 1 and the second heat dissipation plate 2 are the first IGBT device group 4 and / or the second IGBT device group 5 (there are various setting situations according to the distribution of the first and second IGBT device groups on the two heat dissipation plates, which will be elaborated in detail below). Then the first connection ends of the first IGBT device group 4 and the second IGBT device group 5 can all be connected to the bus bar plate 7 at a short distance, as Figure 1As shown, at the same time, the first connection end of the IGBT device group on the third heat dissipation plate 3, i.e., the third IGBT device group 6, can be arranged adjacent to the second connection ends of the IGBT components on the first heat dissipation plate 1 and the second heat dissipation plate, i.e., the first IGBT device group 4 and the second IGBT device group 5. For example, it can be located between the second connection ends of the IGBT components on the first heat dissipation plate 1 and the second heat dissipation plate 2, facilitating the electrical connection of the three IGBT device groups in the same power unit, shortening the size of the required bus bar, shortening the current transmission path, reducing the stray inductance, and improving the operation efficiency of the module.

[0046] The first heat dissipation plate 1, the second heat dissipation plate 2, and the third heat dissipation plate 3 are parallel to each other, and the thickness directions of the plate bodies are the same. Moreover, the thickness direction can be set along the first direction or the second direction. As Figure 1 shown, in a preferred embodiment, the thickness directions of the first heat dissipation plate 1, the second heat dissipation plate 2, and the third heat dissipation plate 3 are all the first direction. The first heat dissipation plate 1 and the second heat dissipation plate 2 are arranged on both sides of the third heat dissipation plate 3 in the thickness direction, and the three plates are distributed in a shape like a triangle or similar to a triangle. In this way, not only are the three plate bodies arranged regularly and closely, but one end of the third heat dissipation plate is significantly closer to the other two heat dissipation plates, which is beneficial to shortening the connection distance of the three IGBT device groups and shortening the current transmission path.

[0047] For example, the projection of the first connection end of the IGBT device group on the third heat dissipation plate 3 in the second direction is located between the second connection ends of the IGBT device groups on the first heat dissipation plate 1 and the second heat dissipation plate 2, and the distances from the IGBT device groups on these two heat dissipation plates are equal. In this way, not only is the size of the bus bar connecting the three IGBT device groups short, but also the distances between the first IGBT device group and the second IGBT device group and the third IGBT device group are the same, and the sizes of the bus bars in the connection direction are the same, making the rates of the two current transmission branch paths equal, the performance of the IGBT power module more stable, and eliminating the hidden dangers such as device burnout and explosion caused by unequal rates of the two current transmission branch paths from the DC end to the AC end in the same power unit after long-term operation.

[0048] In the first direction, the first heat dissipation plate 1 and the second heat dissipation plate 2 have a spacing, are connected, or are of an integral structure. In a preferred embodiment, the first heat dissipation plate 1 and the second heat dissipation plate 2 have a spacing in the first direction. The projection of the third heat dissipation plate 3 in the second direction is misaligned with the first heat dissipation plate 1 and also misaligned with the second heat dissipation plate 2; and one end of the third heat dissipation plate 3 in the second direction and the projection of the connection end of the IGBT device group on the third heat dissipation plate 3 in the second direction are both opposite to this interval, such as being completely within the interval or at least partially within the interval.

[0049] Specifically, the first heat dissipation plate 1 and the second heat dissipation plate 2 have a spacing in the first direction. The projection of the third heat dissipation plate 3 in the second direction is arranged offset from and partially overlaps with the first heat dissipation plate 1, is also arranged offset from and partially overlaps with the second heat dissipation plate 2, and covers this spacing.

[0050] Alternatively, the first heat dissipation plate 1 and the second heat dissipation plate 2 have a spacing in the first direction. The projection of the third heat dissipation plate 3 in the second direction is located within this spacing and has a spacing from the first heat dissipation plate 1 and also has a spacing from the second heat dissipation plate 2. The three heat dissipation plates are distributed in a regular triangular formation. In this way, the connection distance of the IGBT device groups on the three heat dissipation plates can be shortened as much as possible, the current transmission path can be shortened, the size of the bus bar can also be shortened, and the stray inductance and resistance can be reduced.

[0051] The IGBT device group on the first heat dissipation plate 1 is connected to the bus bar plate 7 through the first bus bar 8 and is connected to the IGBT device group on the third heat dissipation plate 3 through the second bus bar 9. The IGBT device group on the second heat dissipation plate 2 is connected to the bus bar plate 7 through the third bus bar 10 and is connected to the IGBT device group on the third heat dissipation plate 3 through the fourth bus bar 11. The first bus bar 8 and the third bus bar 10 are symmetrically arranged about the third heat dissipation plate 3 in the first direction, and the second bus bar 9 and the fourth bus bar 11 are symmetrically arranged about the third heat dissipation plate 3 in the first direction.

[0052] The bus bar plate 7 can be a flat plate body, having a single-piece flat plate body structure. A capacitor is arranged on one side, and the other side is connected to the first IGBT device group 4 and the second IGBT device group 5. For example, if the thickness direction of the bus bar plate 7 is the second direction, the IGBT device group on the first heat dissipation plate 1 is connected to the bus bar plate 7 through the first bus bar 8, and the IGBT device group on the second heat dissipation plate 2 is connected to the bus bar plate 7 through the third bus bar 10. Both the first bus bar 8 and the third bus bar 10 include a first section arranged along the second direction and connected to the IGBT device group and a second section arranged along the second direction and connected to the bus bar plate 7.

[0053] Alternatively, the bus bar plate 7 can include a main board 71 and a connecting board 72 that is bent relative to the main board 71 and is arranged at an angle to the main board 71. The capacitor is arranged on the main board 71, and both the first bus bar 8 and the third bus bar 10 are connected to the connecting board 72, that is, the connecting board 72 is connected to the first IGBT device group 4 and the second IGBT device group 5.

[0054] The connecting plate 72 and the main board 71 have an angle, which can be any angle, such as 30°, 45°, 60°, 75°, 105°, 120°, etc., or any other angle. For example, in some embodiments, the angle is 90 degrees, the main board 71 is perpendicular to the connecting plate 72, the thickness direction of the main board 71 can be set along the first direction, the thickness direction of the connecting plate 71 is set along the second direction, and the first heat sink 1 is arranged in parallel with the main board 71. The first line row 8 and the third line row 10 each include two sections that are respectively set along the first direction and the second direction and connected at an angle. Among them, the first heat sink 1, the second heat sink 2 and the third heat sink 3 are located on the side of the connecting plate 72 facing the main board 71. Such an arrangement can save more space. Of course, in some other embodiments, it can also be that the first heat sink 1, the second heat sink 2 and the third heat sink 3 are located on the side of the connecting plate 72 away from the main board 71.

[0055] Each of the three heat sinks can be provided with only one IGBT device group, or can be provided with two IGBT device groups. Specific embodiments are described below according to the number of IGBT device groups, the structure and shape of the busbar, the thickness direction of the three heat sinks, etc.

[0056] First Class Embodiment

[0057] Reference Figure 2 , the three heat sinks are parallel to each other and the thickness direction is the first direction. The first heat sink 1 and the second heat sink 2 are arranged along the first direction, and the busbar plate 7 and the third heat sink 3 are arranged on both sides of the first heat sink 1 and the second heat sink 2 in the second direction. The projection of the third heat sink 3 in the second direction is staggered with the first heat sink 1 (i.e., partially overlapped or arranged at intervals in the first direction, the same below), and the second heat sink 2 is also staggered (i.e., partially overlapped or arranged at intervals in the first direction, the same below); and one end of the third heat sink 3 in the second direction and the projection of the connection end of the IGBT device group on the third heat sink 3 in the second direction are both located in the interval. A group of IGBT device groups are arranged on each of the three heat sinks, such as a group of first IGBT device groups 4 are arranged on the first heat sink 1, a group of second IGBT device groups 5 are arranged on the second heat sink 2, and a group of third IGBT device groups 6 are arranged on the third heat sink 3.

[0058] The first IGBT device group 4 is located on the side of the first heat sink 1 facing the second heat sink 2, and the second IGBT device group 5 is located on the side of the second heat sink 2 facing the first heat sink 1. The third IGBT device group 6 is located on either side of the third heat sink 3. At the same time, the first connection end (at Figure 1Among them, in the second direction, the end of the third IGBT device group 6 closer to the first and second heat dissipation plates is the first connection end, and its projection in the second direction is located within the distance between the first heat dissipation plate 1 and the second heat dissipation plate 2, and the distance from the first heat dissipation plate 1 is equal to the distance from the second heat dissipation plate 2. However, the distance L1 between the projection of the third heat dissipation plate 3 and the first heat dissipation plate 1 and the distance L2 from the second heat dissipation plate 2 have a difference.

[0059] The first IGBT device group 4 is connected to the busbar board 7 through the first wire row 8 and is connected to the third IGBT device group 6 through the second wire row 9. The second IGBT device group 5 is connected to the busbar board 7 through the third wire row 10 and is connected to the third IGBT device group 6 through the fourth wire row 11.

[0060] The busbar board 7 is a flat plate body and has a single-piece flat plate structure. A capacitor is provided on one side, and the other side is connected to the first IGBT device group 4 and the second IGBT device group 5. If the thickness direction of the busbar board 7 is the second direction, both the first wire row 8 and the third wire row 10 include a first section arranged along the second direction and connected to the IGBT device group and a second section arranged along the second direction and connected to the busbar board 7.

[0061] Both the second wire row 9 and the fourth wire row 11 include three bent sections that are connected in sequence and are arranged at an angle to each other in pairs.

[0062] Second type of embodiment

[0063] The arrangement of the three heat dissipation plates is the same as that of the first type of embodiment: they are parallel to each other and the thickness direction of all is the first direction, and they are distributed in a triangular shape. The setting of the IGBT device group is also the same as that of the first type of embodiment. The busbar board 7 includes a main board 71 and a connecting board 72 that is bent relative to the main board 71 and is arranged at an angle to the main board 71. The connecting board 72 is located on one side of the main board 71. The capacitor is provided on the main board 71. The connecting board 72 and the main board 71 have an angle, preferably 90° (of course, this angle can also be other angles, such as 30°, 45°, 60°, 75°, 105°, 120°, etc., or any other angle). At this time, the thickness direction of the connecting board 72 is arranged along the second direction, and the thickness direction of the main board 71 is the first direction. The main board 71 can be located on the side of the connecting board 72 away from the heat dissipation plate or on the side of the connecting board 72 facing the heat dissipation plate.

[0064] Both the first wire row 8 and the third wire row 10 are connected to the connecting board 72, that is, the connecting board 72 is connected to the first IGBT device group 4 and the second IGBT device group 5. Both the first wire row 8 and the third wire row 10 include two sections connected at an angle.

[0065] Both the second wire row 9 and the fourth wire row 11 include three bent sections that are connected in sequence and are arranged at an angle to each other in pairs.

[0066] In the above two types of embodiments, there is a group of IGBT device groups in the first module unit, the second module unit, and the third module unit respectively. The three groups of IGBT device groups in the three module units are electrically connected to form a power unit. In this way, the cooling and heat dissipation performance is remarkable, and it can be applied to some high-temperature environments to meet the high heat dissipation requirements.

[0067] The third type of embodiment

[0068] Refer to the appendix Figure 1 , the three heat dissipation plates are parallel to each other and the thickness direction is the first direction. The first heat dissipation plate 1 and the second heat dissipation plate 2 are arranged along the first direction, and the bus bar plate 7 and the third heat dissipation plate 3 are respectively arranged on both sides of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the second direction.

[0069] The projection of the third heat dissipation plate 3 in the second direction is misaligned with the first heat dissipation plate 1 (that is, partially overlapped or arranged at intervals in the first direction, the same below), and is also misaligned with the second heat dissipation plate 2 (that is, partially overlapped or arranged at intervals in the first direction, the same below); and one end of the third heat dissipation plate 3 in the second direction and the projection of the connection end of the IGBT device group on the third heat dissipation plate 3 in the second direction are both located within the interval. And the distance L1 between the third heat dissipation plate 3 and the first heat dissipation plate 1 and the distance L2 between the third heat dissipation plate 3 and the second heat dissipation plate 2 in the first direction are the same.

[0070] Two groups of IGBT device groups are respectively arranged on the three heat dissipation plates. One group of the first IGBT device group 4 and one group of the second IGBT device group 5 are respectively arranged on both surfaces in the thickness direction of the first heat dissipation plate 1, denoted as the first IGBT device A group 4' and the second IGBT device A group 5'. One group of the first IGBT device group 4 and one group of the second IGBT device group 5 are also respectively arranged on both surfaces in the thickness direction of the second heat dissipation plate 2, denoted as the first IGBT device B group 4" and the second IGBT device B group 5". Two groups of the third IGBT device groups 6 are respectively arranged on both surfaces in the thickness direction of the third heat dissipation plate 3, denoted as the third IGBT device A group 6' and the third IGBT device B group 6".

[0071] Among them, the third IGBT device A group 6' is located on the side of the third heat dissipation plate 3 facing the first heat dissipation plate 1, the third IGBT device B group 6" is located on the side of the third heat dissipation plate 3 facing the second heat dissipation plate 2. The first IGBT device A group 4' and the second IGBT device A group 5' are electrically connected to the third IGBT device A group 6' to form a power unit; the first IGBT device B group 4" and the second IGBT device B group 5" are electrically connected to the third IGBT device B group 6" to form a power unit. The two power units are symmetrically arranged in the first direction, and the current transmission rate is the same, and the overall performance of the IGBT power module is excellent.

[0072] The first row of lines 8 includes a first row A 8a and a first row B 8b, the second row of lines 9 includes a second row A 9a and a second row B 9b, the third row of lines 10 includes a third row A 10a and a third row B 10b, and the fourth row of lines 11 includes a fourth row A 11a and a fourth row B 11b.

[0073] The first group of IGBT devices A 4' is connected to the busbar plate 7 through the first row A 8a and is connected to the third group of IGBT devices A 6' through the second row A 9a; the second group of IGBT devices A 5' is connected to the busbar plate 7 through the first row B 8b and is connected to the third group of IGBT devices A 6' through the second row B 9b. The first group of IGBT devices B 4" is connected to the busbar plate 7 through the third row A 10a and is connected to the third group of IGBT devices B 6" through the fourth row A 11a, and the second group of IGBT devices B 5" is connected to the busbar plate 7 through the third row B 10b and is connected to the third group of IGBT devices B 6" through the fourth row B 11b.

[0074] The busbar plate 7 is a flat plate body and has a single-piece flat plate structure. The thickness direction of the busbar plate 7 is the second direction. The first row A 8a, the first row B 8b, the third row A 10a, and the third row B 10b all include a first section arranged along the second direction and connected to the IGBT device group and a second section arranged along the second direction and connected to the busbar plate 7.

[0075] The second row A 9a is flat and parallel to the first heat sink 1. The second row B 9b includes a B1 bending section, a B2 bending section, and a B3 bending section connected in sequence. Both the B1 bending section and the B3 bending section are parallel to the first heat sink 1. The fourth row of lines 11 includes a fourth row A 11a and a fourth row B 11b. The fourth row of lines 11 is flat and parallel to the first heat sink 1. The fourth row B 11b includes a B3 bending section, a B4 bending section, and a B5 bending section connected in sequence. Both the B3 bending section and the B5 bending section are parallel to the first heat sink 1.

[0076] Fourth type of embodiment

[0077] Refer to the attached Figure 3 and the attached Figure 4 and, the three heat sinks are parallel to each other and the thickness direction of all of them is the first direction. The first heat sink 1 and the second heat sink 2 are arranged along the first direction, and the busbar plate 7 and the third heat sink 3 are respectively arranged on both sides of the first heat sink 1 and the second heat sink 2 in the second direction.

[0078] The projection of the third heat dissipation plate 3 in the second direction is offset from the first heat dissipation plate 1 (i.e., partially overlapped or arranged at intervals in the first direction, the same below), and is also offset from the second heat dissipation plate 2 (i.e., partially overlapped or arranged at intervals in the first direction, the same below); and one end of the third heat dissipation plate 3 in the second direction and the projection of the connection end of the IGBT device group on the third heat dissipation plate 3 in the second direction are both located within the interval. And the distance L1 between the third heat dissipation plate 3 and the first heat dissipation plate 1 and the distance L2 between the third heat dissipation plate 3 and the second heat dissipation plate 2 are the same in the first direction.

[0079] Two groups of IGBT device groups are respectively arranged on the three heat dissipation plates. One group of the first IGBT device group 4 and one group of the second IGBT device group 5 are respectively arranged on the two side surfaces of the first heat dissipation plate 1 in the thickness direction, denoted as the first IGBT device A group 4' and the second IGBT device A group 5'. One group of the first IGBT device group 4 and one group of the second IGBT device group 5 are also respectively arranged on the two side surfaces of the second heat dissipation plate 2 in the thickness direction, denoted as the first IGBT device B group 4" and the second IGBT device B group 5". Two groups of the third IGBT device groups 6 are respectively arranged on the two side surfaces of the third heat dissipation plate 3 in the thickness direction, denoted as the third IGBT device A group 6' and the third IGBT device B group 6".

[0080] Among them, the third IGBT device A group 6' is located on the side of the third heat dissipation plate 3 facing the first heat dissipation plate 1, the third IGBT device B group 6" is located on the side of the third heat dissipation plate 3 facing the second heat dissipation plate 2. The first IGBT device A group 4' and the second IGBT device A group 5' are electrically connected to the third IGBT device A group 6' to form a power unit; the first IGBT device B group 4" and the second IGBT device B group 5" are electrically connected to the third IGBT device B group 6" to form a power unit. The two power units are symmetrically arranged in the first direction, with the same current transmission rate, and the overall performance of the IGBT power module is excellent.

[0081] The first row 8 includes the first A row 8a and the first B row 8b, the second row 9 includes the second A row 9a and the second B row 9b, the third row 10 includes the third A row 10a and the third B row 10b, and the fourth row 11 includes the fourth A row 11a and the fourth B row 11b.

[0082] The first IGBT device group A 4' is connected to the busbar plate 7 through the first row A 8a and is connected to the third IGBT device group A 6' through the second row A 9a; the second IGBT device group A 5' is connected to the busbar plate 7 through the first row B 8b and is connected to the third IGBT device group A 6' through the second row B 9b. The first IGBT device group B 4" is connected to the busbar plate 7 through the third row A 10a and is connected to the third IGBT device group B 6" through the fourth row A 11a, and the second IGBT device group B 5" is connected to the busbar plate 7 through the third row B 10b and is connected to the third IGBT device group B 6" through the fourth row B 11b.

[0083] The busbar plate 7 includes a main board 71 and a connecting board 72 that is bent relative to the main board 71 and is disposed at an angle to the main board 71. The connecting board 72 is located on one side of the main board 71. The capacitor is disposed on the main board 71. The connecting board 72 and the main board 71 form an angle, preferably 90° (of course, this angle can also be other angles, such as 30°, 45°, 60°, 75°, 105°, 120°). At this time, the thickness direction of the connecting board 72 is set along the second direction, and the thickness direction of the main board 71 is the first direction. The main board 71 can be located on the side of the connecting board 72 away from the heat dissipation plate or on the side of the connecting board 72 facing the heat dissipation plate.

[0084] The second row A 9a is in a flat plate shape and is parallel to the first heat dissipation plate 1. The second row B 9b includes a B1 bending section, a B2 bending section, and a B3 bending section that are connected in sequence. Both the B1 bending section and the B3 bending section are parallel to the first heat dissipation plate 1. The fourth row 11 includes a fourth row A 11a and a fourth row B 11b. The fourth row 11 is in a flat plate shape and is parallel to the first heat dissipation plate 1. The fourth row B 11b includes a B3 bending section, a B4 bending section, and a B5 bending section that are connected in sequence. Both the B3 bending section and the B5 bending section are parallel to the first heat dissipation plate 1.

[0085] In the third and fourth types of embodiments, two groups of IGBT device groups are provided in each of the first module unit, the second module unit, and the third module unit. The six groups of IGBT device groups in the three module units are electrically connected to form two power units. With such an arrangement, the IGBT power module has high power on the basis of good heat dissipation. Or rather, the high-power IGBT power module has good heat dissipation performance through reasonable arrangement, and is arranged compactly. The connection ends of each IGBT device group are arranged adjacently, with low stray inductance and high commutation efficiency.

[0086] The fifth type of embodiment

[0087] The three heat dissipation plates and the busbar plate 7 are parallel to each other and the thickness direction of all is the second direction. The busbar plate 7 and the third heat dissipation plate 3 are located on both sides of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the second direction.

[0088] The projections of the first heat dissipation plate 1, the third heat dissipation plate 3, and the second heat dissipation plate 2 in the second direction are arranged in a staggered manner along the first direction (the staggered arrangement means that along the first direction, the three projections are staggered from each other and do not completely overlap. The three projections are arranged in the first direction and can have a spacing, or can be connected or partially staggered). The projection of the third heat dissipation plate 3 is arranged with a spacing from the projection of either the first heat dissipation plate 1 or the second heat dissipation plate 2 in the first direction, and partially overlaps with the projection of the other. For example, when the three heat dissipation plates are parallel, the first end of the third heat dissipation plate 3 is located within the interval of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the first direction, and the second end is located on one side of the first or second heat dissipation plate in the second direction.

[0089] The projection of the connection end of the IGBT device group on the third heat dissipation plate in the second direction is located within the interval of the first heat dissipation plate 1 and the second heat dissipation plate 2 in the first direction.

[0090] The busbar plate 7 includes a main board 71 and connecting plates 72 located on both sides of the main board 71 in the first direction. The two connecting plates 72 are respectively arranged on the opposite sides of the first heat dissipation plate 1 and the second heat dissipation plate 2, and both have an included angle with the main board 71. This included angle can be between 75° and 135°, preferably 90°.

[0091] On the side of the first heat dissipation plate 1 and the second heat dissipation plate 2 facing away from the busbar plate 7 and towards the third heat dissipation plate 3, a group of IGBT device groups are respectively arranged, namely the first IGBT device group 4 and the second IGBT device group 5. And a group of third IGBT device groups 6 are arranged on the third heat dissipation plate 3. The third IGBT device group 6 can be arranged on any side in the thickness direction of the third heat dissipation plate 3, preferably on the side facing the busbar plate 7.

[0092] The first IGBT device group 4 is connected to one connecting plate 72 through the first wire row 8 and connected to the third IGBT device group 6 through the second wire row 9. The second IGBT device group 5 is connected to the other connecting plate 72 through the third wire row 10 and connected to the third IGBT device group 6 through the fourth wire row 11.

[0093] The first wire row 8 and the third wire row 10 are symmetrically arranged in the first direction, and both include two bent segments or three bent segments that are connected in sequence and arranged at an included angle in sequence.

[0094] Both the second wire row 9 and the fourth wire row 11 include three bent segments that are connected in sequence and arranged at an included angle in sequence.

[0095] The second wire row 9 includes a bent a segment, a bent b segment, and a bent c segment that are connected in sequence. The bent a segment and the bent c segment are both parallel to the first heat dissipation plate and are located on both sides of the bent b segment in the thickness direction;

[0096] The fourth wire row 11 includes a bent section d, a bent section e, and a bent section f that are connected in sequence. Both the bent section d and the bent section f are parallel to the second heat dissipation plate and are on the same side in the thickness direction of the bent section e, or the bent section d and the bent section f are on both sides in the thickness direction of the bent section b.

[0097] Alternatively, the included angle between the connection plate 72 and the main board 71 can also be any angle greater than 90° and less than 180°. Appropriately, it can be between 100° - 165°, and preferably between 120° - 150°, such as 135°.

[0098] The sixth type of embodiment

[0099] The arrangement structure of the heat dissipation plates is the same as that of the fifth type of embodiment, and the setting of the busbar plate 7 is the same as that of the fifth type of embodiment. The difference from the fifth type of embodiment is that two groups of IGBT device groups are provided on each heat dissipation plate, and the setting of the IGBT device groups is the same as that of the IGBT device groups in the fourth embodiment.

[0100] The first IGBT device A group 4' is connected to the busbar plate 7 through the first row A 8a and is connected to the third IGBT device A group 6' through the second row A 9a; the second IGBT device A group 5' is connected to the busbar plate 7 through the first row B 8b and is connected to the third IGBT device A group 6' through the second row B 9b. The first IGBT device B group 4" is connected to the busbar plate 7 through the third row A 10a and is connected to the third IGBT device B group 6" through the fourth row A 11a. The second IGBT device B group 5" is connected to the busbar plate 7 through the third row B 10b and is connected to the third IGBT device B group 6" through the fourth row B 11b.

[0101] The first row A 8a and the first row B 8b are symmetrically arranged in the second direction, and the third row A 10a and the third row B 10b are symmetrically arranged in the second direction. These four wire rows are all connected to the connection plate 72 and all include two bent sections or three bent sections that are connected in sequence and are sequentially arranged at an included angle.

[0102] The second row A 9a and the second row B 9b have the same bent structure as the second wire row 9 in the fifth type of embodiment. The fourth row A 11a and the fourth row B 11b have the same bent structure as the fourth wire row 11 in the fifth type of embodiment.

[0103] The embodiment of the present application also provides an energy storage converter, including a cabinet body and a DC fuse, a DC disconnector, an IGBT power module, a reactor, an AC filter capacitor, and an AC circuit breaker that are arranged in the cabinet body and are connected in sequence. Among them, the power module is the IGBT power module described in any one of the above embodiments. Therefore, the converter has the beneficial effects of the power modules in the above embodiments, which will not be elaborated here.

[0104] The DC fuse, DC disconnect switch, IGBT power module, reactor, AC filter capacitor and AC circuit breaker are connected in sequence, that is, the input end of the DC fuse is connected to the external DC circuit through the DC input copper busbar, the output end of the DC fuse is connected to the DC disconnect switch, the output end of the DC disconnect switch is connected to the input end of the power module, that is, the input end of the busbar plate 7 to achieve connection with the DC capacitor, the DC capacitor is connected to the IGBT device group through the busbar plate 7 and the first line bus, and the output end of the IGBT device group is also the output end of the IGBT power module connected to the input end of the reactor through the total output busbar, the output end of the reactor is connected to the input end of the AC filter, the output end of the AC filter is connected to the input end of the AC circuit breaker, and the output end of the AC circuit breaker is connected to the AC output copper busbar to output AC power to the outside.

[0105] The input end of the reactor is connected to the total output busbar of the IGBT power module, and the reactor can be located on the side of the IGBT power module where the total output busbar is arranged in the second direction or on the side of the IGBT power module in the first direction. In this way, the connection is close and the length of the busbar required is short.

[0106] The basic principles of the present application are described above in conjunction with specific embodiments. However, it should be noted that the advantages, strengths, effects, etc. mentioned in the present application are only examples and not limitations, and it cannot be considered that these advantages, strengths, effects, etc. are required by each embodiment of the present application. In addition, the specific details disclosed above are only for the purpose of illustration and ease of understanding, not for limitation, and the above details do not limit the present application to being implemented by adopting the above specific details.

[0107] The components and devices involved in this application are only illustrative examples and are not intended to require or imply that they must be connected, arranged, and configured in the manner shown in the drawings. As will be appreciated by those skilled in the art, these components and devices can be connected, arranged, and configured in any manner. Words such as "including", "comprising", "having", etc. are open words, meaning "including but not limited to", and can be used interchangeably with them. The words "or" and "and" used here refer to the words "and / or" and can be used interchangeably with them, unless the context clearly indicates otherwise. The word "such as" used here refers to the phrase "such as but not limited to", and can be used interchangeably with it.

[0108] It should also be noted that in the device and apparatus of the present application, each component can be decomposed and / or reassembled, and such decomposition and / or reassembly should be regarded as an equivalent solution of the present application.

[0109] The foregoing description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other aspects without departing from the scope of the present application. Accordingly, the present application is not intended to be limited to the aspects shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0110] It should be understood that the qualifiers "first", "second", "third", etc. used in the description of the embodiments of the present application are only for more clearly elaborating the technical solutions and cannot be used to limit the protection scope of the present application.

[0111] The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of the present application to the form disclosed herein. Although several example aspects and embodiments have been discussed above, those skilled in the art will recognize some of their variations, modifications, alterations, additions, and subcombinations.

[0112] The foregoing are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, etc. made within the spirit and principles of the present application shall be included within the protection scope of the present application.

Claims

1. An IGBT power module, characterized in that: It includes a first heat sink, a second heat sink, a third heat sink and a busbar plate connected to a capacitor, and at least one side surface of each of the three heat sinks is provided with an IGBT device group; The first heat dissipation plate, the second heat dissipation plate and the third heat dissipation plate are arranged parallel to each other; One end of the IGBT device group on the first heat sink and the IGBT device group on the second heat sink are respectively connected to the busbar plate, and the other end is respectively electrically connected to the IGBT device group on the third heat sink.

2. The IGBT power module according to claim 1, characterized in that: The first heat sink and the second heat sink are arranged along a first direction, and the third heat sink is located on one side of the first heat sink and the second heat sink in the second direction; and / or the busbar plate is located on a side of the first heat sink and the second heat sink and away from the third heat sink in the second direction.

3. The IGBT power module according to claim 1, characterized in that: The thickness directions of the first heat dissipation plate, the second heat dissipation plate and the third heat dissipation plate are all in the first direction, and the first heat dissipation plate and the second heat dissipation plate are located on both sides of the third heat dissipation plate in the first direction.

4. The IGBT power module according to claim 3, characterized in that: The first heat dissipation plate and the second heat dissipation plate are spaced apart in the first direction, and a projection of the third heat dissipation plate in the second direction is staggered and partially overlapped with the first heat dissipation plate and is also staggered and partially overlapped with the second heat dissipation plate.

5. The IGBT power module according to claim 3, characterized in that: The first heat dissipation plate and the second heat dissipation plate are spaced apart in the first direction, and a projection of the third heat dissipation plate in the second direction is located within the space and is spaced apart from the first heat dissipation plate and the second heat dissipation plate.

6. The IGBT power module according to claim 3, characterized in that: The IGBT device group on the first heat sink is connected to the busbar plate through a first line bar, and connected to the IGBT device group on the third heat sink through a second line bar. The IGBT device group on the second heat sink is connected to the busbar plate through a third line bar, and connected to the IGBT device group on the third heat sink through a fourth line bar. The first line array and the third line array are symmetrically arranged with respect to the third heat dissipation plate in the first direction, and the second line array and the fourth line array are symmetrically arranged with respect to the third heat dissipation plate in the first direction.

7. The IGBT power module according to claim 6, characterized in that: The thickness direction of the busbar plate is the second direction, and the first line bar and the third line bar each include a first section arranged along the second direction and connected to the IGBT device group and a second section arranged along the second direction and connected to the busbar plate.

8. The IGBT power module according to claim 6, characterized in that: The busbar board includes a main board and a connecting board located at one side of the main board and arranged at an angle to the main board, and the first line bar and the third line bar are both connected to the connecting board.

9. The IGBT power module according to claim 8, characterized in that: The mainboard is perpendicular to the connecting plate, and the first heat sink and the mainboard are arranged parallel to each other; The first heat sink, the second heat sink and the third heat sink are located on a side of the connecting plate facing the main board, or, The first heat dissipation plate, the second heat dissipation plate and the third heat dissipation plate are located on a side of the connecting plate away from the main board.

10. The IGBT power module according to claim 3, characterized in that: The IGBT device group on the first heat sink is located on a side of the first heat sink close to the second heat sink, and the IGBT device group on the second heat sink is located on a side of the second heat sink close to the first heat sink; Along the first direction, the IGBT device group on the third heat sink is located in the interval between the first heat sink and the second heat sink, and the distance between the third heat sink and the first heat sink is equal to the distance between the third heat sink and the second heat sink.

11. The IGBT power module according to claim 3, characterized in that: The first IGBT device group and the second IGBT device group are respectively arranged on both side surfaces of the first heat dissipation plate in the thickness direction, the first IGBT device group and the second IGBT device group are also respectively arranged on both side surfaces of the second heat dissipation plate in the thickness direction, and a third IGBT device group is respectively arranged on both side surfaces of the third heat dissipation plate in the thickness direction; The first IGBT device group and the second IGBT device group on the first heat sink are respectively connected to the busbar plate through the first wire row, and are respectively electrically connected to the third IGBT device group on one side surface of the third heat sink through the second wire row. The first IGBT device group and the second IGBT device group on the second heat sink are respectively connected to the busbar plate through the third wire row, and are respectively electrically connected to the third IGBT device group on the other side surface of the third heat sink through the fourth wire row.

12. The IGBT power module according to claim 11, characterized in that: The second line row includes a second A row and a second B row, the second A row is flat and parallel to the first heat sink, the second B row includes a B1 bending section, a B2 bending section, and a B3 bending section connected in sequence, and the B1 bending section and the B3 bending section are both parallel to the first heat sink; The fourth line row includes a fourth A row and a fourth B row, the fourth line row is flat and parallel to the first heat sink, the fourth B row includes a B3 bending section, a B4 bending section, and a B5 bending section connected in sequence, and the B3 bending section and the B5 bending section are both parallel to the first heat sink.

13. An energy storage converter, characterized in that: It comprises a cabinet body and a DC fuse, a DC isolating switch, an IGBT power module, a reactor, an AC filter capacitor and an AC circuit breaker which are arranged in the cabinet body and connected in sequence. The IGBT power module is the IGBT power module according to any one of claims 1 to 12.

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