HBT (Heterojunction Bipolar Transistor) radio frequency power amplifier with dual-port input

Abstract

The utility model relates to the technical field of radio frequency power amplifiers, in particular to an HBT (Heterojunction Bipolar Transistor) radio frequency power amplifier with dual-port input, which comprises a signal inlet RFIN-1, a signal inlet RFIN-2, two input matching circuits, a first driving stage amplifying circuit, a second driving stage amplifying circuit, an inter-stage matching circuit, a post-stage power amplifier, an output matching circuit and an output Switch, the input matching circuit ensures that radio-frequency power can be completely input into a subsequent circuit without reflection, the first driving-stage amplification circuit and the second driving-stage amplification circuit amplify input radio-frequency signals and provide most of power gain at the same time, double input is achieved by adding one input matching circuit and one driving-stage amplification circuit on an HBT Die, and the input matching circuit and the driving-stage amplification circuit are integrated. Therefore, the input switch can be reduced, the cost is saved, and the stability of the system is improved at the same time.

Description

Technical Field

[0001] The utility model relates to the technical field of radio frequency power amplifiers, in particular to an HBT radio frequency power amplifier with dual-port input. Background Art

[0002] Since radio frequency chips need to meet the requirements of different platform manufacturers, two input ports are required in the design of radio frequency power amplifier chips. As Figure 1 shown, the existing radio frequency chips mostly adopt the scheme of adding switches at the input to solve the problem of dual-port input.

[0003] However, the method of switching two different input ports through switches will increase the loss of the entire radio frequency link, thereby affecting the overall efficiency. Summary of the Utility Model

[0004] The purpose of the utility model is to provide an HBT radio frequency power amplifier with dual-port input, so as to solve the problem that the method of switching two different input ports through switches in the prior art will increase the loss of the entire radio frequency link, thereby affecting the overall efficiency.

[0005] To achieve the above purpose, the utility model provides an HBT radio frequency power amplifier with dual-port input. The HBT radio frequency power amplifier with dual-port input includes a signal inlet RFIN-1, a signal inlet RFIN-2, two input matching circuits, a first driver stage amplifier circuit, a second driver stage amplifier circuit, an inter-stage matching circuit, a post-stage power amplifier, an output matching circuit, and an output switch. The signal inlet RFIN-1 is connected to the inter-stage matching circuit through the first driver stage amplifier circuit, and the signal inlet RFIN-2 is connected to the inter-stage matching circuit through the second driver stage amplifier circuit. The input matching circuits are arranged between the signal inlet RFIN-1 and the first driver stage amplifier circuit and between the signal inlet RFIN-2 and the second driver stage amplifier circuit.

[0006] Among them, each of the input matching circuits includes a ground inductor L1 and a series capacitor C1. The first driver stage amplifier circuit is a transistor amplifier HBT1, the second driver stage amplifier circuit is a transistor amplifier HBT2, the inter-stage matching circuit is a capacitor C2, and the post-stage power amplifier is a transistor amplifier HBT-powercell. The signal inlet RFIN-1 is connected to the input end of the transistor amplifier HBT1 through the series capacitor C1, and the signal inlet RFIN-2 is connected to the input end of the transistor amplifier HBT2 through the series capacitor C1. The ground inductor L1 is provided between the signal inlet RFIN-1 and the corresponding series capacitor C1 and between the signal inlet RFIN-2 and the corresponding series capacitor C1. The output ends of the transistor amplifier HBT1 and the transistor amplifier HBT2 are both connected to the input end of the transistor amplifier HBT-powercell through the capacitor C2, and the output end of the transistor amplifier HBT-powercell is connected to the output matching circuit.

[0007] Among them, a bias circuit Bias1 is provided between the signal inlet RFIN-1 and the transistor amplifier HBT1, and a bias circuit Bias2 is provided between the signal inlet RFIN-2 and the transistor amplifier HBT2.

[0008] Among them, both the transistor amplifier HBT1 and the transistor amplifier HBT2 are connected to the power supply Vcc1.

[0009] Among them, the transistor amplifier HBT-powercell is connected to the power supply Vcc2.

[0010] An HBT radio frequency power amplifier with dual-port input according to the present invention includes a signal inlet RFIN-1, a signal inlet RFIN-2, two input matching circuits, a first driver stage amplifier circuit, a second driver stage amplifier circuit, an inter-stage matching circuit, a post-stage power amplifier, an output matching circuit, and an output Switch. The input matching circuit ensures that the radio frequency power can be fully input into the subsequent circuit without reflection. The first driver stage amplifier circuit and the second driver stage amplifier circuit amplify the input radio frequency signal and provide most of the power gain at the same time. The dual input is realized by adding an input matching circuit and a driver stage amplifier circuit on the HBT Die, which can reduce the input switch, save costs, and improve the stability of the system. Description of the Drawings

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0012] Figure 1 is the structural block diagram of the existing radio frequency chip provided by the present invention.

[0013] Figure 2 is the structural block diagram of the HBT radio frequency power amplifier with dual-port input provided by the present invention.

[0014] Figure 3 is the circuit structure diagram of the HBT radio frequency power amplifier with dual-port input provided by the present invention.

[0015] Figure 4 is the Smith chart provided by the present invention.

[0016] Figure 5 is the circuit structure diagram of different input matching circuits and the driver stage amplification circuit provided by the present invention.

[0017] Figure 6 is the dual-port input different power gain graph provided by the present invention.

[0018] Figure 7 is the schematic diagram of S(1, 1) corresponding to different input matching circuits provided by the present invention.

[0019] 101 - Input matching circuit, 102 - First driver stage amplification circuit, 103 - Second driver stage amplification circuit, 104 - Inter-stage matching circuit, 105 - Post-stage power amplifier, 106 - Output matching circuit, 107 - Output Switch. Specific embodiments

[0020] The following will describe in detail the embodiments of the present invention. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions from beginning to end. The embodiments described below with reference to the drawings are exemplary and are intended to explain the present invention, and should not be construed as a limitation of the present invention.

[0021] Please refer to Figures 1 to 7, the present utility model provides an HBT radio frequency power amplifier with dual-port input. The HBT radio frequency power amplifier with dual-port input includes a signal inlet RFIN-1, a signal inlet RFIN-2, two input matching circuits 101, a first driver stage amplifier circuit 102, a second driver stage amplifier circuit 103, an inter-stage matching circuit 104, a post-stage power amplifier 105, an output matching circuit 106, and an output Switch 107. The signal inlet RFIN-1 is connected to the inter-stage matching circuit 104 through the first driver stage amplifier circuit 102, and the signal inlet RFIN-2 is connected to the inter-stage matching circuit 104 through the second driver stage amplifier circuit 103. The input matching circuits 101 are provided between the signal inlet RFIN-1 and the first driver stage amplifier circuit 102 and between the signal inlet RFIN-2 and the second driver stage amplifier circuit 103;

[0022] Each of the input matching circuits 101 includes a ground inductor L1 and a series capacitor C1. The first driver stage amplifier circuit 102 is a transistor amplifier HBT1, the second driver stage amplifier circuit 103 is a transistor amplifier HBT2, the inter-stage matching circuit 104 is a capacitor C2, and the post-stage power amplifier 105 is a transistor amplifier HBT-powercell. The signal inlet RFIN-1 is connected to the input end of the transistor amplifier HBT1 through the series capacitor C1, and the signal inlet RFIN-2 is connected to the input end of the transistor amplifier HBT2 through the series capacitor C1. The ground inductors L1 are provided between the signal inlet RFIN-1 and the corresponding series capacitor C1 and between the signal inlet RFIN-2 and the corresponding series capacitor C1. The output ends of the transistor amplifier HBT1 and the transistor amplifier HBT2 are both connected to the input end of the transistor amplifier HBT-powercell through the capacitor C2, and the output end of the transistor amplifier HBT-powercell is connected to the output matching circuit 106.

[0023] In this embodiment, the overall circuit structure is composed of the signal input port RFIN-1, the signal input port RFIN-2, two input matching circuits 101, the first driver stage amplifier circuit 102, the second driver stage amplifier circuit 103, the inter-stage matching circuit 104, the post-stage power amplifier circuit, the output matching circuit 106, and the output Switch 107. By adding an additional input matching circuit 101 and driver stage amplifier circuit on the HBT Die, dual-input is achieved, which can reduce the input switch, save costs, and improve the stability of the system. The input matching circuit 101 ensures that the RF power can be fully input into the subsequent circuit without reflection. The first driver stage amplifier circuit 102 and the second driver stage amplifier circuit 103 amplify the input RF signal and provide most of the power gain. The inter-stage matching circuit 104 matches the output of the driver stage amplifier circuit with the input of the post-stage power amplifier circuit. In addition to performing the appropriate matching function, it can also be used to adjust the gain flatness of the entire circuit. The post-stage power amplifier circuit amplifies the RF signal and outputs the required power. The output matching circuit 106 ensures that the output power can reach the output Switch 107, and the output Switch 107 can switch different output ports.

[0024] Among them, the input matching circuit 101 is not limited to the structure of the ground inductor L1 and the series capacitor C1, and other matching methods can also be adopted.

[0025] Furthermore, a bias circuit Bias1 is provided between the signal input port RFIN-1 and the transistor amplifier HBT1, a bias circuit Bias2 is provided between the signal input port RFIN-2 and the transistor amplifier HBT2. Both the transistor amplifier HBT1 and the transistor amplifier HBT2 are connected to the power supply Vcc1, and the transistor amplifier HBT-powercell is connected to the power supply Vcc2.

[0026] In this embodiment, through the settings of the bias circuit Bias1 and the bias circuit Bias2, necessary static power supplies are respectively provided for the transistor amplifier HBT1 and the transistor amplifier HBT2. When the signal input port RFIN-1 is working, the bias circuit Bias1 supplies power and the transistor amplifier HBT1 works, while the bias circuit Bias2 does not supply power, and at this time the transistor amplifier HBT2 is not conducting and can be considered as an open circuit, which is a high-impedance state, as Figure 4The shown Smith chart. Therefore, the RF power is transmitted into the transistor amplifier HBT-powercell through the transistor amplifier HBT1 and will not leak through the transistor amplifier HBT2. Similarly, when the input signal port RFIN2 works, the bias circuit Bias2 works while the bias circuit Bias1 does not work. At this time, the transistor amplifier HBT1 is in a high-impedance state, and the RF power is transmitted into the transistor amplifier HBT-powercell through the transistor amplifier HBT2. Thus, by controlling the on / off of the bias circuit Biase1 and the bias circuit Bias2, any input port can be controlled, and the dual-port input is completed.

[0027] Furthermore, both the transistor amplifier HBT1 and the transistor amplifier HBT2 are connected to the power supply Vcc1, and the transistor amplifier HBT-powercell is connected to the power supply Vcc2.

[0028] In this embodiment, the transistor amplifier HBT1 and the transistor amplifier HBT2 are powered by the power supply Vcc1, and the transistor amplifier HBT-powercell is connected by the power supply Vcc2.

[0029] Furthermore, based on the structure of this technical solution, applications with different input ports corresponding to different Gain (power gain) can also be realized. For example Figure 3 As shown, the two-way input matching circuit 101 and the driver stage amplifier circuit adopt the same circuit structure. If different input matching structures and different numbers of HBT transistors are used as the driver stage amplifier circuit, as Figure 5 shown (other matching methods can also be adopted, not limited to this circuit), different Gain applications can be realized. Figure 5 In Figure 6 the two parallel transistor amplifiers HBT2 represent different numbers of tubes. Different numbers of HBT transistors can generate different Gain. With a suitable input matching circuit 101, the desired Gain can be achieved. As

[0030] Furthermore, Figure 3 when changing the input matching in Figure 3 , the bandwidth of the RF power amplifier circuit can also be increased. If the value of the inductor L1 connected in parallel to the ground in Figure 7 is changed, such that the S(1, 1) of the signal port RFIN-1 path is like the blue solid line inFigure 7 The orange solid line in [it] can increase the bandwidth of the power amplifier circuit by superimposing two paths of S(1, 1). In this way, by corresponding different input ports to different operating frequencies, a broadband power amplifier circuit is realized.

[0031] The above-disclosed is only a preferred embodiment of the present utility model. Of course, the scope of the rights of the present utility model cannot be limited thereby. Those of ordinary skill in the art can understand all or part of the processes of implementing the above embodiments, and the equivalent changes made according to the claims of the present utility model still fall within the scope covered by the utility model.

Claims

1. A HBT radio frequency power amplifier with dual-port input, characterized in that: It includes a signal entry RFIN-1, a signal entry RFIN-2, two input matching circuits, a first driving stage amplifier circuit, a second driving stage amplifier circuit, an inter-stage matching circuit, a post-stage power amplifier, an output matching circuit and an output Switch. The signal entry RFIN-1 is connected to the inter-stage matching circuit through the first driving stage amplifier circuit, and the signal entry RFIN-2 is connected to the inter-stage matching circuit through the second driving stage amplifier circuit. The input matching circuit is arranged between the signal entry RFIN-1 and the first driving stage amplifier circuit and between the signal entry RFIN-2 and the second driving stage amplifier circuit.

2. The HBT RF power amplifier with dual-port input according to claim 1, characterized in that: Each of the input matching circuits includes a ground inductor L1 and a series capacitor C1, the first driving stage amplifier circuit is a transistor amplifier HBT1, the second driving stage amplifier circuit is a transistor amplifier HBT2, the inter-stage matching circuit is a capacitor C2, the post-stage power amplifier is a transistor amplifier HBT-powercell, the signal input RFIN-1 is connected to the input end of the transistor amplifier HBT1 through the series capacitor C1, the signal input RFIN-2 is connected to the input end of the transistor amplifier HBT2 through the series capacitor C1, the ground inductor L1 is arranged between the signal input RFIN-1 and the signal input RFIN-2 and the corresponding series capacitor C1, the output ends of the transistor amplifier HBT1 and the transistor amplifier HBT2 are connected to the input end of the transistor amplifier HBT-powercell through the capacitor C2, and the output end of the transistor amplifier HBT-powercell is connected to the output matching circuit.

3. The HBT RF power amplifier with dual-port input as claimed in claim 2, characterized in that: A bias circuit Bias1 is provided between the signal input RFIN-1 and the transistor amplifier HBT1, and a bias circuit Bias2 is provided between the signal input RFIN-2 and the transistor amplifier HBT2.

4. The HBT radio frequency power amplifier with dual-port input as claimed in claim 3, characterized in that: The transistor amplifier HBT1 and the transistor amplifier HBT2 are both connected to a power source Vcc1.

5. The HBT RF power amplifier with dual-port input as claimed in claim 3, characterized in that: The transistor amplifier HBT-powercell is connected to a power source Vcc2.

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