Semiconductor structure
By designing a thermally dissipating conductive structure and conductive reflective layer in the semiconductor structure of the vertical chip, the problems of current congestion and poor luminous effect are solved, and a higher luminous brightness is achieved.
Patent Information
- Application Number
- CN202421923866.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-08
- Publication Date
- 2025-06-20
- Estimated Expiration
- 2034-08-08
AI Technical Summary
The problem of current congestion in vertical chips and the problem of poor luminous effect.
A semiconductor structure is designed, including a first epitaxial layer, a quantum well luminescent layer and a second epitaxial layer, combining a heat-dissipating conductive structure and a conductive reflective layer, through a conductive plug to achieve heat dissipation and light reflection.
It effectively solves the problem of current congestion and heat generation, and improves the luminous brightness of the semiconductor structure by increasing the reflection area and optimizing the luminous structure.
Smart Images
Figure CN223007844U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductor devices, in particular to a semiconductor structure. Background Art
[0002] Currently, vertical chips are commonly used in high-end thin-film chips. In vertical chips, the P electrode and the N electrode are respectively located on the upper and lower sides of the chip. The vertical structure has the P electrode at the bottom and the N electrode at the top, and this structure is more suitable for chips with a size within 300um.
[0003] With the demand for high-brightness of high-end LEDs, the size of the chips has also increased. However, the increase in chip size will bring problems such as current congestion and heat generation in the chips, as well as poor light-emitting effects. Summary of the Utility Model
[0004] The technical problem solved by the utility model is the problems of current congestion and heat generation in vertical chips, as well as poor light-emitting effects. The utility model provides a semiconductor structure, which solves the problems of current congestion and heat generation in vertical chips, as well as poor light-emitting effects.
[0005] To solve the above technical problems, an embodiment of the utility model provides a semiconductor structure, including:
[0006] A first epitaxial layer, including a first surface and a second surface opposite thereto;
[0007] A quantum well light-emitting layer located on the first surface of the first epitaxial layer, and a second epitaxial layer located on the quantum well light-emitting layer;
[0008] A heat dissipation and conductive structure, including a plurality of conductive plugs. The plurality of conductive plugs penetrate through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer. A plurality of the conductive plugs are exposed on the surface of the second epitaxial layer. The plurality of conductive plugs are electrically connected to the second epitaxial layer, and the conductive plugs are insulated from the quantum well light-emitting layer and the first epitaxial layer;
[0009] A first conductive reflection layer located on the second surface of the first epitaxial layer, and the first conductive reflection layer is located between the plurality of conductive plugs. The first conductive reflection layer is insulated from the heat dissipation and conductive structure and is electrically connected to the first epitaxial layer;
[0010] A conductive substrate bonded to the heat dissipation and conductive structure.
[0011] Optionally, the heat dissipation and conductive structure further includes a conductive bonding layer connecting one end of the conductive plugs. The other end of the conductive plugs is exposed on the surface of the second epitaxial layer. The conductive bonding layer is located on the second surface of the first epitaxial layer, and the conductive substrate is electrically connected to the conductive plugs through the conductive bonding layer.
[0012] Optionally, the conductive plug includes a first conductive plug that penetrates the quantum well light-emitting layer and the first epitaxial layer and is electrically connected to the conductive bonding layer, and a second conductive plug located on the first conductive plug. The second conductive plug penetrates a part of the second epitaxial layer, and the surface of the second epitaxial layer exposes the second conductive plug. The first conductive plug is insulated from the quantum well light-emitting layer and the first epitaxial layer, and the second conductive plug is electrically connected to the second epitaxial layer. Optionally, the semiconductor structure further includes: a first insulating layer located on the sidewall of the second conductive plug and between the second conductive plug and the first conductive reflective layer.
[0013] Optionally, the semiconductor structure further includes: a second insulating layer located on the second surface of the first epitaxial layer and wrapping the first conductive reflective layer.
[0014] Optionally, the semiconductor structure further includes: a second conductive reflective layer located on the sidewall of the second epitaxial layer, and the second conductive reflective layer is insulated from the first conductive reflective layer.
[0015] Optionally, the semiconductor structure further includes: a third insulating layer covering the second epitaxial layer.
[0016] Optionally, for the semiconductor structure, the thickness of the third insulating layer is: to
[0017] Optionally, the semiconductor structure further includes: a passivation layer located on the second conductive reflective layer.
[0018] Optionally, the first epitaxial layer, the quantum well light-emitting layer, and the second epitaxial layer constitute a light-emitting structure of the semiconductor structure. The light-emitting structure includes a first surface and a second surface opposite thereto. The second surface of the first epitaxial layer serves as the second surface of the light-emitting structure. In the light-emitting structure, the angle between the second surface of the light-emitting structure and the sidewall of the light-emitting structure is an obtuse angle, and the angle between the first surface of the light-emitting structure and the sidewall is an acute angle.
[0019] Optionally, the heat dissipation conductive structure serves as the N electrode of the semiconductor structure, and the first conductive reflective layer serves as the P electrode of the semiconductor structure.
[0020] Optionally, the semiconductor structure further includes a roughened surface located on the surface of the second epitaxial layer, and the roughened surface exposes a plurality of the conductive plugs.
[0021] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:
[0022] The semiconductor structure provided by the present utility model is provided with a heat dissipation and conductive structure, and the heat dissipation and conductive structure includes a plurality of conductive plugs penetrating through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer. Since the plurality of conductive plugs penetrate through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer, heat can be effectively dissipated, solving the problem of current congestion and heat generation in the semiconductor structure. At the same time, the plurality of conductive plugs can also be used to reflect light beams, thereby increasing the reflection area of the semiconductor structure and improving the light extraction brightness of the semiconductor structure. Moreover, in the technical solution provided by the present utility model, two conductive structures are provided: namely, a first conductive reflection layer and a heat dissipation and conductive structure including a plurality of conductive plugs. Specifically, the plurality of conductive plugs are electrically connected to the second epitaxial layer, and the conductive plugs are insulated from the quantum well light-emitting layer and the first epitaxial layer. The first conductive reflection layer is disposed on the second surface of the first epitaxial layer, and the first conductive reflection layer is located between the plurality of conductive plugs. The first conductive reflection layer is insulated from the heat dissipation and conductive structure and is electrically connected to the first epitaxial layer, thereby forming a conductive structure in which the conductive plugs and the first conductive reflection layer are distributed at intervals, realizing uniform distribution of current.
[0023] Further, the angle between the second surface of the light-emitting structure and the side wall of the light-emitting structure is an obtuse angle, and the angle between the first surface of the light-emitting structure and the side wall is an acute angle, so that the semiconductor structure forms a bowl-shaped light-emitting form, improving the light-emitting brightness of the semiconductor structure.
[0024] Further, by forming a second conductive reflection layer on the side wall of the second epitaxial layer, part of the divergently emitted light can be converged to a position close to the center of the bowl shape, further improving the light-emitting brightness of the semiconductor structure. Description of the Drawings
[0025] Figure 1 It is a schematic diagram of a semiconductor structure provided by an embodiment of the present utility model. Detailed Embodiments
[0026] As described in the background art, however, with the increase in the chip size, problems such as current congestion and heat generation and poor light-emitting effect will occur.
[0027] In a vertical chip, first, since the circuit layout directly affects the current distribution effect, and the current distribution determines the distribution of the heat generation area. When the chip size of the vertical chip becomes larger, the circuit layout becomes more complex. Therefore, the current distribution and its corresponding heat generation area will inevitably have an aggregation phenomenon, so that the problem of current congestion and heat generation will occur in the vertical chip. Secondly, when the chip size of the vertical chip becomes larger, the light-emitting brightness of the chip is also limited.
[0028] To solve the above problems, an embodiment of the present invention provides a semiconductor structure, including: a first epitaxial layer, including a first surface and a second surface opposite thereto; a quantum well light-emitting layer located on the first surface of the first epitaxial layer, and a second epitaxial layer located on the quantum well light-emitting layer; a heat dissipation and conductive structure, including a plurality of conductive plugs, the plurality of conductive plugs penetrating through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer, a plurality of the conductive plugs being exposed on the surface of the second epitaxial layer, the plurality of conductive plugs being electrically connected to the second epitaxial layer, and the conductive plugs being insulated from the quantum well light-emitting layer and the first epitaxial layer; a first conductive reflection layer located on the second surface of the first epitaxial layer, and the first conductive reflection layer being located between the plurality of conductive plugs, the first conductive reflection layer being insulated from the heat dissipation and conductive structure and being electrically connected to the first epitaxial layer; and a conductive substrate bonded to the heat dissipation and conductive structure.
[0029] In the semiconductor structure provided by the present invention, a heat dissipation and conductive structure is provided, and the heat dissipation and conductive structure includes a plurality of conductive plugs penetrating through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer. Since the plurality of conductive plugs penetrate through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer, heat can be effectively dissipated, solving the problem of current congestion and heat generation in the semiconductor structure. At the same time, the plurality of conductive plugs can also be used to reflect light beams, thereby increasing the reflection area of the semiconductor structure and improving the light output brightness of the semiconductor structure. Moreover, in the technical solution provided by the present invention, two conductive structures are provided: namely, a first conductive reflection layer and a heat dissipation and conductive structure including a plurality of conductive plugs. Specifically, the plurality of conductive plugs are electrically connected to the second epitaxial layer, and the conductive plugs are insulated from the quantum well light-emitting layer and the first epitaxial layer. The first conductive reflection layer is disposed on the second surface of the first epitaxial layer, and the first conductive reflection layer is located between the plurality of conductive plugs. The first conductive reflection layer is insulated from the heat dissipation and conductive structure and is electrically connected to the first epitaxial layer, thereby forming a conductive structure in which the conductive plugs and the first conductive reflection layer are distributed at intervals, realizing uniform distribution of current.
[0030] To make the above objects, features, and beneficial effects of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention will be given with reference to the accompanying drawings.
[0031] Figure 1 is a schematic diagram of a semiconductor structure according to an embodiment of the present invention.
[0032] Please refer to Figure 1 , the semiconductor structure includes: a first epitaxial layer 101, including a first surface 1011 and a second surface 1012 opposite thereto.
[0033] A quantum well light-emitting layer 102 located on the first surface 1011 of the first epitaxial layer 101, and a second epitaxial layer 103 located on the quantum well light-emitting layer 102.
[0034] In one embodiment, the semiconductor structure further includes a roughened surface 1031 on the surface of the second epitaxial layer 103, and the roughened surface exposes a plurality of the conductive plugs 1041 and 1042.
[0035] In a typical example, the semiconductor structure is an LED vertical chip.
[0036] In a typical example, the material of the first-type epitaxial layer 101 is P-GaN; the material of the second epitaxial layer 103 is N-GaN.
[0037] In one embodiment, the first epitaxial layer 101, the quantum well light-emitting layer 102, and the second epitaxial layer 103 constitute a light-emitting structure of the semiconductor structure. The light-emitting structure includes a first surface and a second surface opposite thereto. The second surface 1012 of the first epitaxial layer 101 serves as the second surface of the light-emitting structure, and the light-emitting surface of the second epitaxial layer 103 serves as the first surface of the light-emitting structure. In the light-emitting structure, the angle between the second surface of the light-emitting structure and the sidewall of the light-emitting structure is an obtuse angle, and the angle between the first surface of the light-emitting structure and the sidewall is an acute angle, thereby forming a semiconductor structure similar to a bowl shape.
[0038] The "bowl-shaped" semiconductor structure enables the semiconductor structure to form a bowl-shaped light-emitting pattern, improving the light-emitting brightness of the semiconductor structure.
[0039] In one embodiment, the angle between the first surface of the light-emitting structure and the sidewall is 30° to 85°. By setting the angle between the first surface of the light-emitting structure and the sidewall within the range of 30° to 85°, the technical effect of enhancing the light-emitting brightness of the semiconductor structure can be achieved. The angle between the first surface of the light-emitting structure and the sidewall is also the angle between the light-emitting surface and the sidewall.
[0040] In one embodiment, the "inverted trapezoidal structure" of the longitudinal section of the light-emitting structure is an isosceles trapezoidal structure, as Figure 1 shown.
[0041] In one embodiment, the semiconductor structure further includes a second conductive reflective layer 109 on the sidewall of the second epitaxial layer 103, and the second conductive reflective layer 109 is insulated from the first conductive reflective layer 107.
[0042] By forming a second conductive reflective layer on the sidewalls of the second epitaxial layer, part of the divergently emitted light can be converged to a position near the bowl-shaped center, further improving the luminescence brightness of the semiconductor structure.
[0043] In some specific examples, the second conductive reflective layer 109 is made of a metal with a relatively high reflectivity, such as Ag, Al, or an alloy material including but not limited to Ag or Al. It can also be a stacked reflective structure, such as a stack of Cr and Ag, a stack of Cr and Al, a stack of Ti and Al, a stack of Ti and Ag, etc. Among them, the thickness of the stack of Cr and Ti is less than 1 nm.
[0044] The second conductive reflective mirror layer, together with the "bowl-shaped" light-emitting structure, forms a unique design structure with high luminescence brightness, enhancing the luminescence brightness of the semiconductor structure, especially the second-generation vertical chip structure.
[0045] The thickness of the second conductive reflective layer 109 is greater than 100 nm. When the thickness of the second conductive reflective layer 109 is greater than 100 nm, the reflection efficiency of the second conductive reflective layer 109 can be ensured, thereby ensuring the light-concentrating effect of the first conductive reflective layer 109.
[0046] In one embodiment, the semiconductor structure further includes a passivation layer 110 located on the second conductive reflective layer 109.
[0047] In some specific examples, the material of the passivation layer 110 is one or a combination of several materials such as SiO2, SiN, SiNO, or Al2O3.
[0048] Among them, since the passivation layer 110 is provided on the surface of the second conductive reflective layer 109, it is possible to prevent the second conductive reflective layer 109 from being connected to the first conductive reflective layer during the manufacturing process of the semiconductor structure, resulting in leakage.
[0049] In one implementation manner, the passivation layer 110 covers the bottom end of the second conductive reflective layer 109, avoiding the risk of leakage caused by the connection between the second conductive reflective layer 109 and the first conductive reflective layer 107.
[0050] In another preferred implementation manner, the passivation layer 110 can also be set to cover the bottom end of the second conductive reflective layer 109 and the surfaces of other parts.
[0051] During the bonding process of the conductive substrate and the heat-dissipating conductive structure, since the second conductive reflective layer 109 is prone to being extruded, it is easy for the second conductive reflective layer 109 to overflow onto the surface of the first conductive reflective layer 109, resulting in a risk of contact between the second conductive reflective layer 109 and the first conductive reflective layer 107. In view of the actual manufacturing requirements, the passivation layer 110 completely covers the bottom end of the second conductive reflective layer 109 covered by the second passivation layer 104 and the surfaces of other parts; so as to better avoid the connection between the second reflective layer 109 and the first conductive reflective layer during the actual process manufacturing, causing leakage.
[0052] In one embodiment, the thickness of the passivation layer 110 is 500 nm to 2000 nm. When the thickness of the passivation layer 110 is too thin, the risk of breakdown and fracturing increases, and when it is too thick, it will affect the heat dissipation of the semiconductor structure; thus, the thickness of the passivation layer 110 is set to be 500 nm to 2000 nm.
[0053] The heat-dissipating conductive structure includes a plurality of conductive plugs 1041. A plurality of the conductive plugs 1041 penetrate through the second epitaxial layer 103, the quantum well light-emitting layer 102, and the first epitaxial layer 101. A plurality of the conductive plugs 1041 are exposed on the surface of the second epitaxial layer 103. A plurality of the conductive plugs 1041 are electrically connected to the second epitaxial layer 103, and the conductive plugs 1041 are insulated from the quantum well light-emitting layer 102 and the first epitaxial layer 101.
[0054] A plurality of conductive plugs penetrate through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer. Therefore, heat can be effectively dissipated, solving the problem of current congestion and heat generation in the semiconductor structure. At the same time, a plurality of conductive plugs can also be used to reflect light beams, thereby increasing the reflection area of the semiconductor structure and improving the light output brightness of the semiconductor structure.
[0055] In a typical embodiment, the number of heat-dissipating conductive structures is four.
[0056] In other embodiments, the number of heat-dissipating conductive structures can be other numbers, and the present invention does not limit this.
[0057] In one embodiment, the heat-dissipating conductive structure further includes a conductive bonding layer 1042 connected to one end of the conductive plug 1041. The other end of the conductive plug 1041 is exposed on the surface of the second epitaxial layer 103. The conductive bonding layer 1042 is located on the second surface 1012 of the first epitaxial layer 101. Thus, the heat-dissipating structure forms the N electrode of the semiconductor structure, and the conductive substrate 106 is electrically connected to the conductive plug 1041 through the conductive bonding layer 1042. The conductive substrate 106 serves as the N electrode lead-out structure of the semiconductor structure.
[0058] In the semiconductor structure, a plurality of conductive plugs penetrate through the second epitaxial layer, the quantum well light-emitting layer, and the first epitaxial layer, thereby achieving a heat dissipation effect, solving the problem of current congestion and heating generated in the semiconductor structure, and the conductive plugs can also be used to reflect light beams, thereby increasing the reflection area of the semiconductor structure and improving the light extraction brightness of the semiconductor structure. At the same time, the conductive plugs and the conductive bonding layer connecting the conductive plugs serve as the N electrode of the semiconductor structure, and the N electrode is led out by connecting the conductive plugs and the conductive bonding layer to a conductive substrate.
[0059] In one embodiment, the conductive plug 1041 includes a first conductive plug 10411 that penetrates through the quantum well light-emitting layer 102 and the first epitaxial layer 101 and is electrically connected to the conductive bonding layer 1042, and a second conductive plug 10412 located on the first conductive plug 10411. The second conductive plug 10412 penetrates through a part of the second epitaxial layer 103, and the second epitaxial layer 103 exposes the second conductive plug 10412 on its surface. The first conductive plug 10411 is insulated from the quantum well light-emitting layer 102 and the first epitaxial layer 101, and the second conductive plug 10412 is electrically connected to the second epitaxial layer 103.
[0060] In one embodiment, the semiconductor structure further includes: a first insulating layer 111 located on the sidewall of the second conductive plug 10411 and between the second conductive plug 10411 and the first conductive reflection layer 107. The first insulating layer 111 is used to isolate the conductive plug 1041 from the first conductive reflection layer 107, and at the same time isolate the first conductive plug 10411 from the first epitaxial layer 101 and the quantum well light-emitting layer.
[0061] The material of the second conductive plug 10412 is: **to**
[0062] The reflectivity of the second conductive plug 10412 is: **to**
[0063] The thermal conductivity coefficient of the second conductive plug 10412 is: **to**
[0064] The second conductive plug is disposed in the second epitaxial layer for
[0065] In a specific embodiment, the structure of the conductive plug formed by the first conductive plug and the second conductive plug formed on the first conductive plug is a conical structure. In other embodiments, it can also be a combined structure composed of two prisms, such as Figure 1 the structure shown.
[0066] The semiconductor structure further includes: a first conductive reflective layer 107 located on the second surface 1012 of the first epitaxial layer 101, and the first conductive reflective layer 107 is located between several of the conductive plugs 1041. The first conductive reflective layer 107 is insulated from the heat dissipation conductive structure and is electrically connected to the first epitaxial layer 101.
[0067] In one embodiment, the semiconductor structure further includes: a second insulating layer 108 located on the second surface 1012 of the first epitaxial layer 101 and covering the first conductive reflective layer 107.
[0068] The second insulating layer 108 is used to insulate the first conductive reflective layer 107 from the conductive bonding layer.
[0069] In one embodiment, the first conductive reflective layer 107 serves as the P electrode of the semiconductor structure. The P electrode formed by the first conductive reflective layer 107 and the N electrode formed by the heat dissipation conductive structure together serve as the P electrode and N electrode of the semiconductor structure.
[0070] The semiconductor structure further includes: a conductive substrate bonded to the heat dissipation conductive structure, so that the N electrode is led out through the conductive substrate. The P electrode is led out by providing a P electrode lead-out structure connecting several first conductive reflective layers 107 on one side of the semiconductor structure.
[0071] In one embodiment, the semiconductor structure further includes: a third insulating layer (not shown in the figure) covering the second epitaxial layer 103.
[0072] The third insulating layer is used to isolate the second epitaxial layer 103 from the P electrode lead-out structure, preventing the P electrode lead-out structure from being electrically connected to the second epitaxial layer 103 when the P electrode lead-out structure is fabricated.
[0073] In one embodiment, for the semiconductor structure, the thickness of the third insulating layer is: to
[0074] In a typical example, the material of the third insulating layer is a transparent insulating layer material. In a specific example, the material of the third insulating layer is silicon dioxide.
[0075] In summary, for the semiconductor structure provided by the present utility model, first of all, by arranging a heat dissipation and conductive structure in the second epitaxial layer, the first epitaxial layer and the quantum well light-emitting layer, the reflection area of the semiconductor structure is increased, thereby enhancing the chip brightness. At the same time, the heat dissipation and conductive structure can serve as the heat dissipation structure of the semiconductor structure, solving the problem of heat generation caused by current congestion. In addition, the heat dissipation and conductive structure and the first conductive reflection layer arranged between the heat dissipation and conductive structures serve as the electrodes of the semiconductor structure, realizing a semiconductor structure with a high uniform current distribution.
[0076] Although the present utility model is disclosed as above, the present utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present utility model. Therefore, the protection scope of the present utility model should be subject to the scope defined by the claims.
Claims
1. A semiconductor structure, characterized in that: include: A first epitaxial layer including a first surface and an opposite second surface; a quantum well light-emitting layer located on the first surface of the first epitaxial layer, and a second epitaxial layer located on the quantum well light-emitting layer; a heat dissipation conductive structure, comprising a plurality of conductive plugs, wherein the plurality of conductive plugs penetrate the second epitaxial layer, the quantum well light-emitting layer and the first epitaxial layer, the plurality of conductive plugs are exposed on the surface of the second epitaxial layer, the plurality of conductive plugs are electrically connected to the second epitaxial layer, and the conductive plugs are insulated from the quantum well light-emitting layer and the first epitaxial layer; a first conductive reflective layer located on the second surface of the first epitaxial layer, wherein the first conductive reflective layer is located between the plurality of conductive plugs, the first conductive reflective layer is insulated from the heat dissipation conductive structure, and is electrically connected to the first epitaxial layer; A conductive substrate bonded to the heat dissipation conductive structure.
2. The semiconductor structure according to claim 1, characterized in that: The heat dissipation conductive structure also includes a conductive bonding layer connected to one end of the conductive plug, the other end of the conductive plug is exposed on the surface of the second epitaxial layer, the conductive bonding layer is located on the second surface of the first epitaxial layer, and the conductive substrate is electrically connected to the conductive plug through the conductive bonding layer.
3. The semiconductor structure according to claim 2, characterized in that: The conductive plug includes a first conductive plug penetrating the quantum well light-emitting layer and the first epitaxial layer and electrically connected to the conductive bonding layer, and a second conductive plug located on the first conductive plug, wherein the second conductive plug penetrates a portion of the second epitaxial layer, and the second conductive plug is exposed on the surface of the second epitaxial layer, the first conductive plug is insulated from the quantum well light-emitting layer and the first epitaxial layer, and the second conductive plug is electrically connected to the second epitaxial layer.
4. The semiconductor structure according to claim 3, characterized in that: Also includes: The first insulating layer is located on the sidewall of the second conductive plug and between the second conductive plug and the first conductive reflective layer.
5. The semiconductor structure according to claim 3, characterized in that: Also includes: A second insulating layer is located on the second surface of the first epitaxial layer and wraps the first conductive reflective layer.
6. The semiconductor structure according to claim 3, characterized in that: Also includes: A second conductive reflective layer is located on the side wall of the second epitaxial layer, and the second conductive reflective layer is insulated from the first conductive reflective layer.
7. The semiconductor structure according to claim 1, characterized in that: Also includes: A third insulating layer covers the second epitaxial layer.
8. The semiconductor structure according to claim 7, characterized in that: The thickness of the third insulating layer is: to 9. The semiconductor structure according to claim 6, characterized in that: Also includes: A passivation layer is located on the second conductive reflective layer.
10. The semiconductor structure according to claim 1, wherein: The first epitaxial layer, the quantum well light-emitting layer and the second epitaxial layer constitute a light-emitting structure of the semiconductor structure, and the light-emitting structure includes a first surface and a second surface opposite thereto, and the second surface of the first epitaxial layer serves as the second surface of the light-emitting structure. In the light-emitting structure, the angle between the second surface of the light-emitting structure and the side wall of the light-emitting structure is an obtuse angle, and the angle between the first surface of the light-emitting structure and the side wall is an acute angle.
11. The semiconductor structure according to claim 1, characterized in that: The heat dissipation conductive structure serves as an N-electrode of the semiconductor structure, and the first conductive reflective layer serves as a P-electrode of the semiconductor structure.
12. The semiconductor structure according to claim 1, characterized in that The invention also includes a roughened surface located on the surface of the second epitaxial layer, wherein the roughened surface exposes a plurality of the conductive plugs.