Vacuum coating equipment
Through vacuum coating equipment integrating multiple coating devices, the problem of single coating process of existing equipment is solved, multifunction coating is realized, and the stability of the coating process and product quality are improved.
Patent Information
- Application Number
- CN202421755890.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-23
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2034-07-23
AI Technical Summary
Existing vacuum coating equipment is single in terms of coating process and cannot meet the increasingly diverse product characteristics and market demands.
A vacuum coating equipment is designed, integrating a variety of coating devices, such as a metal organic compound chemical vapor deposition device, a magnetron sputtering device, an evaporation device, a reaction plasma deposition device and an atomic layer deposition device, which is arranged around the transmission device to realize multifunctional coating.
The integration of multiple coating processes is achieved, which facilitates verification and mass production of each process. Each coating device is independently controlled, which facilitates switching and adjustment between different coating tasks, and improves the stability of the coating process and product quality.
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Figure CN223016955U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of coating equipment. More specifically, it relates to a vacuum coating equipment. Background Art
[0002] With the rapid development of technology, vacuum coating technology has been widely used in many fields such as electronics, automotive, aerospace, optical instruments, etc. This technology deposits coating materials on the surface of a substrate by physical or chemical methods in a highly vacuum environment to form one or more thin films, thereby endowing the substrate with new physical, chemical or mechanical properties, such as corrosion resistance, wear resistance, enhanced hardness and special optical properties, etc. However, the current vacuum coating equipment on the market still faces many limitations in the available coating processes.
[0003] Most of the existing vacuum coating equipment only supports a single coating process, such as sputtering, ion plating and vacuum evaporation plating, etc. Although these traditional processes meet the coating requirements of some products to a certain extent, their limitations are becoming increasingly prominent in the face of the increasingly diverse product characteristics and market demands. Utility Model Content
[0004] The purpose of the embodiments of this application is to provide a vacuum coating equipment to solve the technical problem of single coating process existing in the prior art.
[0005] To achieve the above purpose, the technical solution adopted in this application is:
[0006] Provide a vacuum coating equipment, including a transfer device, a loading device, an unloading device, and one or more of a metal organic chemical vapor deposition device, a magnetron sputtering device, an evaporation plating device, a reactive plasma deposition device, and an atomic layer deposition device; the loading device, the unloading device, and one or more of the metal organic chemical vapor deposition device, the magnetron sputtering device, the evaporation plating device, the reactive plasma deposition device, and the atomic layer deposition device are arranged around the outer periphery of the transfer device along the circumferential direction, and the transfer device is used to pick / place materials to / from the loading device, the unloading device, the metal organic chemical vapor deposition device, the magnetron sputtering device, the evaporation plating device, the reactive plasma deposition device, and the atomic layer deposition device.
[0007] As a further improvement of the above technical solution:
[0008] Optionally, the loading device, the unloading device, the metal-organic chemical vapor deposition device, the magnetron sputtering device, the evaporation coating device, the reactive plasma deposition device, and the atomic layer deposition device are all provided with a vacuum transition chamber, and the vacuum transition chamber is arranged between the transfer device and the corresponding loading device / unloading device / metal-organic chemical vapor deposition device / magnetron sputtering device / evaporation coating device / reactive plasma deposition device / atomic layer deposition device.
[0009] Optionally, the loading device includes a loading chamber and a substrate conveying mechanism. The loading chamber has a loading inlet and a loading outlet, and the substrate conveying mechanism is used to convey the substrate from the loading inlet to the loading outlet, and the loading outlet is communicated with the first vacuum transition chamber.
[0010] Optionally, the unloading device includes an unloading chamber and a finished product conveying mechanism. The unloading chamber has an unloading inlet and an unloading outlet, and the finished product conveying mechanism is used to convey the finished product from the unloading inlet to the unloading outlet, and the unloading inlet is communicated with the second vacuum transition chamber.
[0011] Optionally, the metal-organic chemical vapor deposition device includes a vapor deposition chamber, a vapor deposition heating component, a vapor deposition base, a chemical vapor deposition gas supply component, and a chemical vapor deposition tail gas treatment component. The vapor deposition chamber is communicated with the third vacuum transition chamber. The vapor deposition heating component is used to heat the materials in the vapor deposition chamber. The vapor deposition base is used to carry the substrate. The chemical vapor deposition gas supply component is used to supply reaction gases. The chemical vapor deposition tail gas treatment component is used to treat the exhaust gas after the reaction.
[0012] Optionally, the magnetron sputtering device includes a sputtering chamber, a turntable assembly, and a sputtering target source. The sputtering chamber is communicated with the fourth vacuum transition chamber. The turntable assembly is used to carry the substrate.
[0013] Optionally, the evaporation coating device includes an evaporation coating chamber, an evaporation rotary heating component, an evaporation point source, and an evaporation coating baffle. The evaporation coating chamber is communicated with the fifth vacuum transition chamber. The evaporation rotary heating component is used to carry the substrate and heat the evaporation coating chamber. The evaporation coating baffle is used to preheat the evaporation coating material.
[0014] Optionally, the reactive plasma deposition device includes a plasma deposition chamber, a cathode gun, a magnetically focused water-cooled crucible, an ion rotary heating component, and a deposition baffle. The plasma deposition chamber is communicated with the sixth vacuum transition chamber. The cathode gun is used to generate plasma. The magnetically focused water-cooled crucible is used to carry the solid source. The plasma is converged onto the solid source under magnetic field control to evaporate it. The ion rotary heating component is used to carry the substrate and heat the plasma deposition chamber. The deposition baffle is used to shield the substrate when the evaporation of the solid source is not balanced.
[0015] Optionally, the atomic layer deposition apparatus includes an atomic layer deposition chamber, an atomic layer deposition heating component, an atomic layer deposition base, an atomic layer gas supply component, and an atomic layer tail gas treatment component. The atomic layer deposition chamber is communicated with the seventh vacuum transition chamber. The atomic layer deposition heating component is used to heat the atomic layer deposition chamber. The atomic layer deposition base is used to carry the substrate. The atomic layer gas supply component is used to transport reaction gases. The atomic layer tail gas treatment component is used to treat the exhaust gas after the reaction.
[0016] Optionally, it further includes a reserved station, which is located on the outer periphery of the transfer device and between any two of the metal organic chemical vapor deposition device, the magnetron sputtering device, the evaporation coating device, the reactive plasma deposition device, and the atomic layer deposition device.
[0017] The beneficial effects of the vacuum coating equipment provided by the present application are as follows:
[0018] The vacuum coating equipment provided by the present application includes a transfer device, a loading device, an unloading device, and various coating devices, including but not limited to one or more of a metal organic chemical vapor deposition device, a magnetron sputtering device, an evaporation coating device, a reactive plasma deposition device, and an atomic layer deposition device. The metal organic chemical vapor deposition device, the magnetron sputtering device, the evaporation coating device, the reactive plasma deposition device, and the atomic layer deposition device are arranged around the outer periphery of the transfer device and along the circumferential direction. The transfer device is used to pick up / place materials for the loading device, the unloading device, the metal organic chemical vapor deposition device, the magnetron sputtering device, the evaporation coating device, the reactive plasma deposition device, and the atomic layer deposition device. The vacuum coating equipment of the present application has multiple coating processes in the metal organic chemical vapor deposition device, the magnetron sputtering device, the evaporation coating device, the reactive plasma deposition device, and the atomic layer deposition device, so as to realize multi-functional coating, which is convenient for process verification and batch production. Each coating device is independently controlled, which is convenient for the transfer device to switch and adjust between different coating tasks. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for use in the embodiments or the description of the prior art. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0020] Figure 1 It is a schematic diagram of the spatial layout structure of the vacuum coating equipment provided by the present application.
[0021] Among them, the reference numerals in the figure:
[0022] 1. Transfer device; 2. Loading device; 3. Unloading device; 4. Metal-organic chemical vapor deposition device; 5. Magnetron sputtering device; 6. Evaporation coating device; 7. Reactive plasma deposition device; 8. Atomic layer deposition device; 91. First vacuum transition chamber; 92. Second vacuum transition chamber; 93. Third vacuum transition chamber; 94. Fourth vacuum transition chamber; 95. Fifth vacuum transition chamber; 96. Sixth vacuum transition chamber; 97. Seventh vacuum transition chamber. Specific embodiments
[0023] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0024] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0025] It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.
[0026] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality" means two or more unless otherwise specifically defined.
[0027] Such as Figure 1As shown in the figure, the present application provides a vacuum coating device, which includes a transfer device 1, a loading device 2, an unloading device 3, and a variety of coating devices, including but not limited to one or more of a metal-organic chemical vapor deposition device 4 (MOCVD, Metal-organic Chemical Vapor Deposition), a magnetron sputtering device 5 (DC / MF PVD, Physical Vapor Deposition), an evaporation coating device 6, a reactive plasma deposition device 7 (RPD, reactive plasma deposition), and an atomic layer deposition device 8 (ALD, Atomic layer deposition). The metal-organic chemical vapor deposition device 4, the magnetron sputtering device 5, the evaporation coating device 6, the reactive plasma deposition device 7, and the atomic layer deposition device 8 are arranged around the outer periphery of the transfer device 1 and are arranged in a circumferential direction. The transfer device 1 is used to pick / place materials to / from the loading device 2, the unloading device 3, the metal-organic chemical vapor deposition device 4, the magnetron sputtering device 5, the evaporation coating device 6, the reactive plasma deposition device 7, and the atomic layer deposition device 8. The transfer device 1 specifically includes a transfer chamber and a robotic arm. A vacuum and clean environment needs to be maintained inside the transfer chamber, and the robotic arm is used to transfer materials from the loading device 2 to one or more of the metal-organic chemical vapor deposition device 4, the magnetron sputtering device 5, the evaporation coating device 6, the reactive plasma deposition device 7, and the atomic layer deposition device 8. After the coating is completed, the products in the metal-organic chemical vapor deposition device 4, the magnetron sputtering device 5, the evaporation coating device 6, the reactive plasma deposition device 7, and the atomic layer deposition device 8 are then transferred to the unloading device 3. The vacuum coating device of the present application has a variety of coating processes in the metal-organic chemical vapor deposition device 4, the magnetron sputtering device 5, the evaporation coating device 6, the reactive plasma deposition device 7, and the atomic layer deposition device 8, so as to achieve multi-functional coating, which is convenient for process verification and mass production. In addition, each coating device is independently controlled, which is convenient for the transfer device 1 to switch and adjust between different coating tasks.
[0028] In an embodiment of the present application, the loading device 2, the unloading device 3, the metal-organic chemical vapor deposition device 4, the magnetron sputtering device 5, the evaporation coating device 6, the reactive plasma deposition device 7, and the atomic layer deposition device 8 are all provided with a vacuum transition chamber. The vacuum transition chamber is arranged between the transfer device 1 and the corresponding loading device 2 / unloading device 3 / metal-organic chemical vapor deposition device 4 / magnetron sputtering device 5 / evaporation coating device 6 / reactive plasma deposition device 7 / atomic layer deposition device 8 to form a seamlessly connected vacuum environment. The introduction of the vacuum transition chamber aims to achieve efficient pressure balance between the chambers of each coating device. It is not only a physical connection bridge but also a key link for performance transition, effectively ensuring the transition of key parameters such as pressure and temperature during the process from transfer to processing, thereby improving the stability of the coating process and the product quality. It is worth mentioning that a valve is also configured at the inlet of the vacuum transition chamber. By opening and closing the valve, while maintaining a high vacuum degree, sealing control is achieved, effectively preventing gas cross-contamination between chambers and ensuring the purity and reliability of the coating process.
[0029] In an embodiment of the present application, the loading device 2 includes a loading chamber and a substrate conveying mechanism. The loading chamber has a loading inlet and a loading outlet, and the substrate conveying mechanism is used to convey the substrate from the loading inlet to the loading outlet. Specifically, the substrate conveying mechanism can use lifting mechanisms such as a lifting table or a lifting chain machine to achieve lifting and moving to convey the substrate; or use rotating mechanisms such as a rotating table, and transfer the substrate to a specified position through a rotating action to meet diverse production requirements. Given the existing technologies adopted by the substrate conveying mechanism, the present application will not elaborate on its specific implementation details here. In addition, the loading outlet is connected to the first vacuum transition chamber 91 to ensure that the substrate adapts to and reaches the required vacuum state before entering the coating environment.
[0030] In an embodiment of the present application, the unloading device 3 includes an unloading chamber and a finished product conveying mechanism. The unloading chamber has an unloading inlet and an unloading outlet, and the finished product conveying mechanism is used to convey the finished product from the unloading inlet to the unloading outlet. Specifically, the finished product conveying mechanism can use lifting mechanisms such as a lifting table or a lifting chain machine to achieve lifting and moving to convey the finished product; or use rotating mechanisms such as a rotating table, and transfer the coated finished product to a specified position through a rotating action to meet diverse production requirements. Given the existing technologies adopted by the finished product conveying mechanism, the present application will not elaborate on its specific implementation details here. In addition, the unloading inlet is connected to the second vacuum transition chamber 92 to ensure that the finished product transitions to the external environment when being sent out of the vacuum coating equipment and blocks the interference of the external environment on the vacuum state of the coating environment.
[0031] In one embodiment of the present application, a metal-organic chemical vapor deposition apparatus 4 (MOCVD) includes a vapor deposition chamber, a vapor deposition heating assembly, a vapor deposition pedestal, a chemical vapor deposition gas supply assembly, and a chemical vapor deposition tail gas treatment assembly. The vapor deposition chamber is connected to the third vacuum transition chamber 93 to ensure the continuity of the deposition process and the stability of the vacuum environment. The vapor deposition chamber has a double-layer water-cooled structure. The vapor deposition heating assembly uses a graphite planar heater to heat the materials in the vapor deposition chamber. The vapor deposition pedestal is used to carry the substrate and drive the substrate to rotate. The chemical vapor deposition gas supply assembly is used to transport reaction gases, regulate the flow rate, concentration, and mixing ratio of the reaction gases, and transport them to the vapor deposition chamber through a pipeline system to provide the necessary raw materials for chemical reactions. The chemical vapor deposition gas supply assembly includes an air flow upper cover plate, and the air flow upper cover plate has many air holes to uniformly input the reaction gases into the vapor deposition chamber. The chemical vapor deposition tail gas treatment assembly is used to capture and treat the waste gases generated after the reaction to ensure the safety and environmental protection of the production process.
[0032] In one embodiment of the present application, a magnetron sputtering apparatus 5 includes a sputtering chamber, a turntable assembly, and a sputtering target source. The sputtering chamber is connected to the fourth vacuum transition chamber 94. The turntable assembly is used to carry the substrate and drive the substrate to rotate. The sputtering target source is used to provide coating raw materials. During the magnetron sputtering process, high-energy plasma is guided and focused on the surface of the target material. Through strong bombardment, the components on the surface of the target material are efficiently sputtered out in the form of atomic clusters or ions. These particles fly and deposit on the surface of the substrate carried by the turntable assembly in a vacuum environment. As the sputtering process continues, a dense thin film gradually accumulates on the surface of the substrate.
[0033] In one embodiment of the present application, an evaporation coating apparatus 6 includes an evaporation coating chamber, an evaporation rotary heating assembly, an evaporation point source, and an evaporation baffle. The evaporation coating chamber is connected to the fifth vacuum transition chamber 95 to ensure the continuity of the evaporation coating process and the stability of the vacuum environment. The evaporation rotary heating assembly is responsible for carrying and driving the substrate to rotate to achieve uniform heating of the substrate and uniform deposition of the film layer. The evaporation point source, as the film layer raw material, is released into the evaporation coating chamber by heating and evaporation. The evaporation baffle controls the evaporation coating process by preheating the evaporation coating material and adjusting the opening angle and position to ensure that the film layer quality meets the design requirements.
[0034] In one embodiment of the present application, the reactive plasma deposition apparatus 7 includes a plasma deposition chamber, a cathode gun, a magnetically focused water-cooled crucible, an ion rotation heating assembly, and a deposition baffle. The plasma deposition chamber is communicated with the sixth vacuum transition chamber 96 to ensure the continuity of the deposition process and the stability of the vacuum environment. The cathode gun is used to generate plasma, and the magnetically focused water-cooled crucible is used to carry the solid source. Through the magnetic focusing technology, the plasma is precisely converged onto the surface of the solid source under the action of a specific magnetic field, causing the solid source to evaporate. The water-cooling system effectively controls the temperature of the crucible and prevents damage to the surrounding structures caused by high temperatures. The ion rotation heating assembly is used to carry the substrate, drive the substrate to rotate, and heat the plasma deposition chamber and the substrate to the coating temperature. When the evaporation of the solid source does not reach dynamic equilibrium, the deposition baffle can block the substrate to prevent unevaporated particles or impurities from directly depositing on the surface of the substrate, ensuring the quality and purity of the deposited layer.
[0035] In one embodiment of the present application, the atomic layer deposition apparatus 8 includes an atomic layer deposition chamber, an atomic layer deposition heating assembly, an atomic layer deposition pedestal, an atomic layer gas supply assembly, and an atomic layer tail gas treatment assembly. The atomic layer deposition chamber is communicated with the seventh vacuum transition chamber 97 to ensure the continuity of the deposition process and the stability of the vacuum environment. The atomic layer deposition heating assembly uses a graphite planar heater to heat the materials in the chemical vapor deposition chamber. The atomic layer deposition pedestal is used to carry the substrate and drive the substrate to rotate. The atomic layer gas supply assembly is used to transport the reaction gas, regulate the flow rate, concentration, and mixing ratio of the reaction gas, and transport it to the atomic layer deposition chamber through a pipeline system to provide the necessary raw materials for the chemical reaction. The atomic layer gas supply assembly also has an air flow upper cover plate with many air holes to evenly input the reaction gas into the chemical vapor deposition chamber. The atomic layer tail gas treatment assembly is used to capture and treat the waste gas generated after the reaction to ensure the safety and environmental protection of the production process.
[0036] In one embodiment of the present application, the vacuum coating equipment further includes a reserved station to provide function expansion capabilities. The reserved station is located on the outer periphery of the transfer device 1 and between any two of the metal organic chemical vapor deposition apparatus 4, the magnetron sputtering apparatus 5, the evaporation coating apparatus 6, the reactive plasma deposition apparatus 7, and the atomic layer deposition apparatus 8, facilitating the transfer device 1 to transport the substrate and ensuring the structural compactness of the vacuum coating equipment.
[0037] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present application shall be included within the protection scope of the present application.
Claims
1. A vacuum coating device, characterized in that: The invention comprises a transmission device (1), a loading device (2), a unloading device (3), and one or more of a metal organic compound chemical vapor deposition device (4), a magnetron sputtering device (5), a vapor deposition device (6), a reactive plasma deposition device (7), and an atomic layer deposition device (8); the loading device (2), the unloading device (3), and one or more of the metal organic compound chemical vapor deposition device (4), the magnetron sputtering device (5), the vapor deposition device (6), the reactive plasma deposition device (7), and the atomic layer deposition device (8) are arranged around the outer periphery of the transmission device (1) in a circumferential direction; the transmission device (1) is used for taking / putting materials to / from the loading device (2), the unloading device (3), the metal organic compound chemical vapor deposition device (4), the magnetron sputtering device (5), the vapor deposition device (6), the reactive plasma deposition device (7), and the atomic layer deposition device (8).
2. The vacuum coating equipment according to claim 1, characterized in that: The loading device (2), unloading device (3), metal organic compound chemical vapor deposition device (4), magnetron sputtering device (5), evaporation device (6), reactive plasma deposition device (7) and atomic layer deposition device (8) are all provided with a vacuum transition chamber, and the vacuum transition chamber is provided between the transmission device (1) and the corresponding loading device (2) / unloading device (3) / metal organic compound chemical vapor deposition device (4) / magnetron sputtering device (5) / evaporation device (6) / reactive plasma deposition device (7) / atomic layer deposition device (8).
3. The vacuum coating equipment according to claim 2, characterized in that: The feeding device (2) comprises a feeding chamber and a base material conveying mechanism, the feeding chamber having a feeding inlet and a feeding outlet, the base material conveying mechanism being used to convey the base material from the feeding inlet to the feeding outlet, and the feeding outlet being in communication with a first vacuum transition chamber (91).
4. The vacuum coating equipment according to claim 2, characterized in that: The material discharge device (3) comprises a material discharge chamber and a finished product conveying mechanism, wherein the material discharge chamber has a material discharge inlet and a material discharge outlet, and the finished product conveying mechanism is used to convey the finished product from the material discharge inlet to the material discharge outlet, and the material discharge inlet is connected to the second vacuum transition chamber (92).
5. The vacuum coating equipment according to claim 2, characterized in that: The metal organic compound chemical vapor deposition device (4) comprises a vapor deposition chamber, a vapor deposition heating component, a vapor deposition base, a chemical vapor deposition gas supply component and a chemical vapor deposition exhaust gas treatment component. The vapor deposition chamber is connected to a third vacuum transition chamber (93). The vapor deposition heating component is used to heat the material in the vapor deposition chamber. The vapor deposition base is used to carry the base material. The chemical vapor deposition gas supply component is used to transport the reaction gas. The chemical vapor deposition exhaust gas treatment component is used to treat the waste gas after the reaction.
6. The vacuum coating equipment according to claim 2, characterized in that: The magnetron sputtering device (5) comprises a sputtering chamber, a turret assembly and a sputtering target source, the sputtering chamber is connected to a fourth vacuum transition chamber (94), and the turret assembly is used for carrying a base material.
7. The vacuum coating equipment according to claim 2, characterized in that: The evaporation device (6) comprises an evaporation chamber, an evaporation rotary heating component, an evaporation point source and an evaporation baffle, the evaporation chamber is connected to a fifth vacuum transition chamber (95), the evaporation rotary heating component is used to carry a base material and heat the evaporation chamber, and the evaporation baffle is used to preheat an evaporation film material.
8. The vacuum coating equipment according to claim 2, characterized in that: The reactive plasma deposition device (7) comprises a plasma deposition chamber, a cathode gun, a magnetic focusing water-cooled crucible, an ion rotating heating component, and a deposition baffle. The plasma deposition chamber is connected to a sixth vacuum transition chamber (96). The cathode gun is used to generate plasma. The magnetic focusing water-cooled crucible is used to carry a solid source. The plasma is collected on the solid source under the control of a magnetic field to evaporate it. The ion rotating heating component is used to carry a base material and heat the plasma deposition chamber. The deposition baffle is used to shield the base material when the evaporation of the solid source is not balanced.
9. The vacuum coating equipment according to claim 2, characterized in that: The atomic layer deposition device (8) comprises an atomic layer deposition chamber, an atomic layer deposition heating component, an atomic layer deposition base, an atomic layer gas supply component and an atomic layer exhaust gas treatment component. The atomic layer deposition chamber is connected to the seventh vacuum transition chamber (97). The atomic layer deposition heating component is used to heat the atomic layer deposition chamber. The atomic layer deposition base is used to carry the base material. The atomic layer gas supply component is used to transport the reaction gas. The atomic layer exhaust gas treatment component is used to treat the waste gas after the reaction.
10. The vacuum coating equipment according to any one of claims 1 to 9, characterized in that: It also includes a reserved workstation, which is located on the periphery of the transmission device (1) and between any two of the metal organic compound chemical vapor deposition device (4), the magnetron sputtering device (5), the evaporation device (6), the reactive plasma deposition device (7), and the atomic layer deposition device (8).