Vapor phase epitaxy equipment

Abstract

The utility model discloses vapor phase epitaxy equipment which comprises an epitaxy furnace body, an epitaxy cavity is arranged in the epitaxy furnace body, a raw material chamber, a gas spray head and at least one tray are arranged in the epitaxy cavity, a raw material boat is arranged in the raw material chamber, the tray is arranged below the gas spray head, and the gas spray head is arranged on the tray. The tray is used for bearing a wafer for epitaxial growth, the raw material boat is communicated with the gas spraying head, the gas spraying head is used for spraying reaction gas to the wafer so as to grow a crystal epitaxial layer on the wafer, and the top of the epitaxial furnace body is provided with at least one in-situ detection device corresponding to the tray. The in-situ detection device is used for carrying out real-time detection on the crystal epitaxial layer, the epitaxial furnace body is provided with a window corresponding to the in-situ detection device, and the in-situ detection device is arranged on the epitaxial furnace body, so that real-time online monitoring on the epitaxial layer is realized, growth information of the epitaxial layer can be obtained in time, and the design is ingenious.

Description

Technical Field

[0001] The utility model relates to the field of vapor deposition, and in particular to a vapor phase epitaxy device. Background Art

[0002] The third-generation semiconductor materials represented by gallium nitride (GaN) and its alloys are new semiconductor materials that have been highly regarded internationally in the past decade. It has many excellent properties such as a large bandgap width, a high electron saturation drift velocity, a small dielectric constant, good thermal conductivity, and stable structure, and has great application prospects in both optoelectronic and microelectronic technology fields. In the optoelectronic field, since the bandgap width of group III nitrides can be continuously adjusted in the range of 0.7 - 6.2 eV, covering the wavelength band from red to ultraviolet, light-emitting devices in the green, blue, and even ultraviolet bands as well as white light illumination can be fabricated. GaN lasers also have great potential in the field of information storage and can be applied in various aspects such as medical diagnosis, submarine detection, and communication.

[0003] Currently, the common device for GaN growth is the HVPE vapor phase epitaxy device. However, when growing GaN, it is necessary to maintain a high temperature. In addition, the structure of the HEVPE device is relatively complex, and it is very difficult to perform in-situ detection on GaN crystals. Currently, there is no solution for real-time in-situ detection of the epitaxial layer in the HVPE device. Summary of the Invention

[0004] The purpose of the utility model is to provide a vapor phase epitaxy device to achieve in-situ detection of the crystal epitaxial layer.

[0005] To achieve the above purpose, a vapor phase epitaxy device provided by the utility model includes an epitaxial furnace body. An epitaxial cavity is provided inside the epitaxial furnace body. A raw material chamber, a gas spray head, and at least one tray are provided inside the epitaxial cavity. A raw material boat is provided inside the raw material chamber. The tray is arranged below the gas spray head. The tray is used to hold the wafers for epitaxial growth. The raw material boat is communicated with the gas spray head. The gas spray head is used to spray reaction gases onto the wafers to grow crystal epitaxial layers on the wafers. At least one in-situ detection device is provided at the top of the epitaxial furnace body corresponding to the tray. The in-situ detection device is used to perform real-time detection on the crystal epitaxial layer. The epitaxial furnace body is provided with a window corresponding to the in-situ detection device.

[0006] Preferably, the in-situ detection device includes a laser in-situ detector, which is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxial chamber; or, the in-situ detection device includes a laser in-situ detector and a spectral analyzer, the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxial chamber, and the spectral analyzer is used to determine the elemental content of the epitaxial growth of the wafer or the gas elemental concentration outside the wafer; or, the in-situ detection device includes a laser in-situ detector and an imaging device, the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxial chamber, and the imaging device is used to detect the growth profile state information of the crystal epitaxial layer; or, the in-situ detection device includes a laser in-situ detector, a spectral analyzer, and an imaging device, the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxial chamber, the spectral analyzer is used to determine the elemental content of the crystal epitaxial growth or the gas elemental concentration outside the wafer, and the imaging device is used to detect the growth profile state information of the crystal epitaxial layer.

[0007] Preferably, the raw material chamber is located above the gas shower head and the raw material chamber avoids the laser path of the laser in-situ detector, and the raw material chamber is connected to the gas shower head through a pipeline; or, the raw material chamber is located on one side in the horizontal direction of the gas shower head to avoid the laser path of the laser in-situ detector, and the raw material chamber is connected to the gas shower head through a pipeline.

[0008] Preferably, the gas shower head includes multiple layers of transparent quartz layers, and air channels are provided inside the multiple layers of transparent quartz layers.

[0009] Preferably, the gas shower head avoids the laser path of the laser in-situ detector; or a through hole is provided in the gas shower head, and the through hole is used for the laser of the laser in-situ detector to penetrate.

[0010] Preferably, the outer periphery of the laser in-situ detector is coated with a heat-insulating protective jacket or a cooling device.

[0011] The present utility model further provides a vapor phase epitaxy device, which includes an epitaxy furnace body. An epitaxy cavity is provided inside the epitaxy furnace body. A gas spray head and at least one tray are provided inside the epitaxy cavity. A raw material boat chamber is provided outside the epitaxy furnace body. A raw material boat is provided inside the raw material boat chamber. The raw material boat is communicated with the gas spray head. The tray is arranged below the gas spray head. The tray is used to hold wafers for epitaxial growth. The gas spray head is used to spray reaction gas onto the wafers to grow a crystal epitaxial layer on the wafers. At least one in-situ detection device is provided corresponding to the tray at the top of the epitaxy furnace body. The in-situ detection device is used to perform real-time detection on the crystal epitaxial layer. A window is provided on the epitaxy furnace body corresponding to the in-situ detection device.

[0012] Preferably, the in-situ detection device includes a laser in-situ detector, which is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxy cavity; or, the in-situ detection device includes a laser in-situ detector and a spectral analyzer. The laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxy cavity. The spectral analyzer is used to determine the elemental content of the crystal epitaxial growth or the gas elemental concentration on the periphery of the wafer; or, the in-situ detection device includes a laser in-situ detector and an image device. The laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxy cavity. The image device is used to detect the growth profile state information of the crystal epitaxial layer; or, the in-situ detection device includes a laser in-situ detector, a spectral analyzer, and an image device. The laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature inside the epitaxy cavity. The spectral analyzer is used to determine the elemental content of the wafer epitaxial growth or the gas elemental concentration on the periphery of the wafer. The image device is used to detect the growth profile state information of the crystal epitaxial layer.

[0013] Preferably, the gas spray head includes multiple layers of transparent quartz layers, and air channels are provided inside the multiple layers of transparent quartz layers.

[0014] Preferably, the gas spray head avoids the laser path of the laser in-situ detector; or through holes are provided on the gas spray head, and the through holes are used for the laser of the laser in-situ detector to penetrate.

[0015] Compared with the prior art, by providing an in-situ detection device on the epitaxy furnace body, the present utility model realizes real-time online monitoring of the crystal epitaxial layer, can timely obtain the growth information of the crystal epitaxial layer, and has a clever design. Description of the Drawings

[0016] Figure 1This is a schematic structural diagram of a specific implementation of the vapor phase epitaxy device in Embodiment 1 of the present utility model.

[0017] Figure 2 This is a schematic structural diagram of another specific implementation of the vapor phase epitaxy device in Embodiment 1 of the present utility model.

[0018] Figure 3 This is a schematic structural diagram of yet another specific implementation of the vapor phase epitaxy device in Embodiment 1 of the present utility model.

[0019] Figure 4 This is a schematic structural diagram of a specific implementation of the vapor phase epitaxy device in Embodiment 2 of the present utility model.

[0020] Figure 5 This is a schematic structural diagram of another specific implementation of the vapor phase epitaxy device in Embodiment 2 of the present utility model. Specific implementation

[0021] To describe in detail the technical content, structural features, and achieved effects of the present utility model, the following will be described in detail in conjunction with the embodiments and with reference to the accompanying drawings.

[0022] Embodiment 1

[0023] As Figures 1 to 3 shown, the embodiment of the present utility model provides a vapor phase epitaxy device, including an epitaxial furnace body 1. An epitaxial cavity 11 is provided inside the epitaxial furnace body 1. A raw material chamber 2, a gas spray head 3, and at least one tray 4 are provided inside the epitaxial cavity 11. A raw material boat is provided inside the raw material chamber 2. The tray 4 is arranged below the gas spray head 3 and the tray 4 is used to hold the wafers for epitaxial growth. The raw material boat is communicated with the gas spray head 3. The gas spray head 3 is used to spray reaction gas onto the wafers to grow a crystal epitaxial layer on the wafers. At least one in-situ detection device is provided at the top of the epitaxial furnace body 1 corresponding to the tray 4. The in-situ detection device is used to detect the crystal epitaxial layer. The epitaxial furnace body 1 is provided with a window 7 corresponding to the in-situ detection device. Specifically, the epitaxial furnace body 1 can be the housing of an HVPE vapor phase epitaxy device. The gas spray head 3 is also connected to an external gas supply pipeline 62 to provide gases for epitaxial growth such as nitrogen. The raw material chamber 2 is arranged inside the epitaxial cavity 11. The raw material boat can be, but is not limited to, a gallium boat. The raw material boat is connected to the gas spray head 3 to provide gallium chloride gas for epitaxial growth. The in-situ detection device is arranged directly opposite the tray 4. The in-situ detection device is located outside the epitaxial cavity 11.

[0024] The present utility model realizes real-time on-line monitoring of the growth of the crystal epitaxial layer by arranging an in-situ detection device on the epitaxial furnace body 1, can timely obtain the growth information of the crystal epitaxial layer, and has a clever design.

[0025] In an embodiment of the utility model, the in-situ detection device includes a laser in-situ detector 5, a spectrometer and an imaging device. The laser in-situ detector 5 is used to detect the curvature of the crystal epitaxial layer, the temperature of the chip and the temperature inside the epitaxial cavity 11. The spectrometer is used to determine the element content of the epitaxial growth of the chip or the gas element concentration at the periphery of the chip. The imaging device is used to detect the growth shape state information of the crystal epitaxial layer.

[0026] Specifically, the laser in-situ detector 5 can emit laser and analyze the curvature of the crystal epitaxial layer according to the laser spot reflected by the crystal epitaxial layer, and the temperature of the wafer and the temperature in the epitaxial cavity 11 can be detected by analyzing the infrared light emitted by the crystal epitaxial layer itself. In addition, real-time image monitoring can be performed through an image device, such as a camera, and the growth state information of the crystal epitaxial layer can be monitored in real time by analyzing the image. The growth state information includes the size and shape of the crystal epitaxial layer. Whether it is complete, whether there are cracks, etc. The crystal epitaxial layer of the embodiment of the utility model needs to grow at a specific high temperature. According to the specific high temperature, a suitable laser wavelength can be selected, and according to the wavelength of the laser and the position of the crystal epitaxial layer, a window 7 of a corresponding size is determined. The material of the window 7 can be a transparent material such as quartz, and the thickness of the window 7 can be greater than or equal to 5 mm and less than or equal to 8 mm. In addition, since the crystal epitaxial layer of the embodiment of the utility model needs to grow at a specific high temperature, and the ambient temperature of the periphery of the wafer is easily disturbed, a calculation model can be established according to the experimental data to remove the interference of the ambient temperature on the sample temperature.

[0027] It should be noted that in some other specific embodiments of the utility model, the in-situ detection device may only include the laser in-situ detector 5, or only include the laser in-situ detector 5 and a spectrometer, or only include the laser in-situ detector 5 and an imaging device. The components included in the in-situ detection device can be determined according to actual needs.

[0028] In the embodiment of the utility model, Figure 1 As shown, the raw material chamber 2 is located above the gas shower head 3 and the raw material chamber 2 avoids the laser path 51 of the laser in-situ detector 5, and the raw material boat is connected to the gas shower head 3 through a pipeline. Specifically, there can be two or more laser in-situ detectors 5 arranged corresponding to the tray 4, and the size of the raw material chamber 2 can be set to be smaller and located inside the area surrounded by the laser path 51 of the laser detector to avoid the laser path 51 of the laser in-situ detector 5. The raw material chamber 2 and the gas shower head 3 can be connected specifically through a first pipeline 61.

[0029] In some other specific implementations of the present utility model, such as Figure 2 and Figure 3As shown, the raw material chamber 2 can also be located on one side in the horizontal direction of the gas shower head 3 to avoid the laser path 51 of the laser in-situ detector 5, and the raw material boat is connected to the gas shower head 3 through a pipeline.

[0030] In the embodiment of the present utility model, as Figure 1 shown, the gas shower head 3 includes multiple layers of transparent quartz layers 31. An air passage is provided in the multiple layers of transparent quartz layers 31 for introducing various gases used for epitaxial growth. Specifically, the transparent quartz layer 31 can be four layers stacked on each other, and the thickness of each transparent quartz layer 31 is 3 mm. The specific material of the transparent quartz layer 31 can be germanium glass, and germanium glass absorbs less laser passing through it. Therefore, at this time, the size of the gas shower head 3 can be set larger, and the laser penetrates through the multiple layers of transparent quartz layers 31 and shoots towards the tray 4.

[0031] It should be noted that in some other specific embodiments of the present utility model, as Figure 3 shown, the size of the gas shower head 3 can also be set smaller to avoid the laser path 51 of the laser in-situ detector 5, or a through hole is provided in the gas shower head 3 for the laser of the laser in-situ detector 5 to penetrate, so as to achieve laser avoidance and the size of the gas shower head 3 can also be relatively large. At this time, the material of the gas shower head 3 is not limited to transparent material, and can also be opaque material, because the structure of the gas shower head 3 will not affect the laser.

[0032] In the embodiment of the present utility model, the outer periphery of the laser in-situ detector 5 is coated with a heat insulation protection jacket to avoid damage to the laser in-situ detector 5 caused by high temperature.

[0033] Embodiment 2

[0034] The difference between this embodiment and Embodiment 1 is that in this embodiment, as Figures 4 to 5 shown, a raw material boat chamber 2a is provided outside the epitaxial furnace body 1. A raw material boat is provided in the raw material boat chamber 2a, and the raw material boat is communicated with the gas shower head 3. Specifically, since the raw material boat chamber 2a is externally placed, a lot of space can be saved in the epitaxial chamber 11. The distance between the laser in-situ detector 5 and the tray 4 can be set closer, which can greatly improve the detection effect. The vapor phase epitaxy device 10 in this embodiment includes two independent chambers, namely the raw material boat chamber 2a and the epitaxial chamber 11. The raw material boat and the epitaxial chamber 11 are connected through a second pipeline 61a. Since the raw material boat chamber 2a is externally placed, an additional heating component is required to heat the raw material boat chamber 2a. The gallium chloride gas formed by the raw material boat can be mixed with other gases such as nitrogen and enter the epitaxial chamber 11 through independent pipelines and mix in the gas shower head 3 after being heated. In addition, as Figure 4 shown, the raw material boat chamber 2a can be provided above the epitaxial furnace body 1. At this time, the area of the epitaxial furnace body 1 is smaller, which is suitable for occasions with small space, such asFigure 5 As shown, the raw material boat chamber 2a can also be arranged on the periphery of the epitaxial furnace body 1. At this time, the stability and safety of the raw material boat chamber 2a are relatively higher, and the specific installation position of the raw material boat chamber 2a can be selected according to the actual situation.

[0035] Furthermore, a first heating and pressurizing part is connected to the epitaxial furnace body 1, and the first heating and pressurizing part is used to heat and pressurize the epitaxial chamber 11. A second heating and pressurizing part is connected to the raw material boat chamber 2a, and the second heating and pressurizing part is used to heat and pressurize the interior of the raw material boat chamber 2a. Specifically, the first heating and pressurizing part includes a first heating component and a first pressurizing component to adjust the temperature and pressure in the epitaxial chamber 11, and the second heating and pressurizing part includes a second heating component and a second pressurizing component to adjust the temperature and pressure in the raw material boat chamber 2a. The first heating and pressurizing part and the second heating and pressurizing part are independently arranged.

[0036] In the embodiment of the present utility model, the in-situ detection device includes a laser in-situ detector 5, a spectral analyzer, and an image device. The laser in-situ detector 5 is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer, and the temperature in the epitaxial chamber 11. The spectral analyzer is used to determine the elemental content of the epitaxial growth of the wafer or the gas elemental concentration on the periphery of the wafer. The image device is used to detect the growth profile state information of the crystal epitaxial layer.

[0037] Specifically, the laser in-situ detector 5 can emit laser and analyze the curvature of the crystal epitaxial layer according to the laser spot reflected by the crystal epitaxial layer, and detect the temperature of the wafer and the temperature in the epitaxial chamber 11 by analyzing the infrared light emitted by the crystal epitaxial layer itself. In addition, real-time image monitoring can be carried out through an image device, such as a camera, and the growth state information of the crystal epitaxial layer can be monitored in real time by analyzing the image. The growth state information includes the size of the crystal epitaxial layer, whether the shape is complete, and whether there are cracks. In the embodiment of the present utility model, the crystal epitaxial layer needs to grow at a specific high temperature. An appropriate laser wavelength can be selected according to the specific high temperature, and a window 7 with a corresponding size can be determined according to the laser wavelength and the position of the crystal epitaxial layer. The material of the window 7 can be a transparent material such as quartz, and the thickness of the window 7 can be greater than or equal to 5 mm and less than or equal to 8 mm. In addition, since the crystal epitaxial layer of the present utility model needs to grow at a specific high temperature, and the ambient temperature on the periphery of the wafer is easily disturbed, a calculation model can be established according to the experimental data to remove the interference of the ambient temperature on the sample temperature.

[0038] It should be noted that in some other specific embodiments of the present utility model, the in-situ detection device may only include the laser in-situ detector 5, or may only include the laser in-situ detector 5 and the spectral analyzer, or may only include the laser in-situ detector 5 and the imaging device. The components included in the in-situ detection device can be determined according to actual needs.

[0039] In the embodiment of the present utility model, the gas spray head 3 includes multiple layers of transparent quartz layers 31, and air channels are provided in the multiple layers of transparent quartz layers 31. Specifically, the specific setting method of the multiple layers of transparent quartz layers 31 can refer to the description in Embodiment 1 and will not be elaborated here.

[0040] It should be noted that in some other specific embodiments of the embodiment of the present utility model, the gas spray head 3 can also be set to a smaller size to avoid the laser path 51 of the laser in-situ detector 5, or a through hole can be provided in the gas spray head 3 for the laser of the laser in-situ detector 5 to penetrate, so as to achieve laser avoidance and the size of the gas spray head 3 can also be relatively large. At this time, the material of the gas spray head 3 is not limited to transparent materials and can also be opaque materials because the structure of the gas spray head 3 will not affect the laser.

[0041] In the embodiment of the present utility model, the outer periphery of the laser in-situ detector 5 is coated with a heat-insulating protective jacket or a cooling device to prevent the laser in-situ detector 5 from being damaged by high temperature.

[0042] The above-disclosed are only the preferred examples of the present utility model, and of course, the scope of rights of the present utility model cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present utility model still fall within the scope covered by the present utility model.

Claims

1. A vapor phase epitaxy device, characterized in that: The invention comprises an epitaxial furnace body, wherein an epitaxial cavity is arranged in the epitaxial furnace body, wherein a raw material chamber, a gas shower head and at least one tray are arranged in the epitaxial cavity, wherein a raw material boat is arranged in the raw material chamber, wherein the tray is arranged below the gas shower head, wherein the tray is used for holding wafers for epitaxial growth, wherein the raw material boat is connected with the gas shower head, wherein the gas shower head is used for spraying reaction gas to the wafers so as to grow a crystal epitaxial layer on the wafers, wherein at least one in-situ detection device is arranged at the top of the epitaxial furnace body corresponding to the tray, wherein the in-situ detection device is used for real-time detection of the crystal epitaxial layer, and wherein the epitaxial furnace body is provided with a window corresponding to the in-situ detection device.

2. The vapor phase epitaxy device according to claim 1, characterized in that: The in-situ detection device comprises a laser in-situ detector, and the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer and the temperature in the epitaxial cavity; or, The in-situ detection device includes a laser in-situ detector and a spectrum analyzer, wherein the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer and the temperature in the epitaxial cavity, and the spectrum analyzer is used to determine the element content of the epitaxial growth of the wafer or the gas element concentration around the wafer; or, The in-situ detection device includes a laser in-situ detector and an imaging device, wherein the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer and the temperature in the epitaxial cavity, and the imaging device is used to detect the growth shape state information of the crystal epitaxial layer; or, The in-situ detection device includes a laser in-situ detector, a spectrometer and an imaging device. The laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the chip and the temperature inside the epitaxial cavity. The spectrometer is used to determine the element content of the epitaxial growth of the crystal or the gas element concentration around the chip. The imaging device is used to detect the growth shape state information of the crystal epitaxial layer.

3. The vapor phase epitaxy device according to claim 2, characterized in that: The raw material chamber is located above the gas shower head and the raw material chamber avoids the laser path of the laser in-situ detector, and the raw material chamber is connected to the gas shower head through a pipeline; or, The raw material chamber is located on one side of the gas shower head in the horizontal direction to avoid the laser path of the laser in-situ detector, and the raw material chamber is connected to the gas shower head through a pipeline.

4. The vapor phase epitaxy device according to claim 3, characterized in that: The gas shower head comprises multiple layers of transparent quartz layers, and gas channels are arranged in the multiple layers of transparent quartz layers.

5. The vapor phase epitaxy device according to claim 3, characterized in that: The gas shower head avoids the laser path of the laser in-situ detector; or The gas shower head is provided with a through hole, and the through hole is used for the laser penetration of the laser in-situ detector.

6. The vapor phase epitaxy apparatus according to claim 2, characterized in that: The outer periphery of the laser in-situ detector is covered with a heat-insulating protective jacket or a cooling device.

7. A vapor phase epitaxy device, characterized in that: The invention comprises an epitaxial furnace body, wherein an epitaxial cavity is arranged in the epitaxial furnace body, a gas shower head and at least one tray are arranged in the epitaxial cavity, a raw material boat chamber is arranged outside the epitaxial furnace body, a raw material boat is arranged in the raw material boat chamber, the raw material boat is connected with the gas shower head, the tray is arranged below the gas shower head, the tray is used for holding wafers for epitaxial growth, the gas shower head is used for spraying reaction gas to the wafers so as to grow crystal epitaxial layers on the wafers, at least one in-situ detection device is arranged at the top of the epitaxial furnace body corresponding to the tray, the in-situ detection device is used for real-time detection of the crystal epitaxial layer, and the epitaxial furnace body is provided with a window corresponding to the in-situ detection device.

8. The vapor phase epitaxy apparatus according to claim 7, characterized in that: The in-situ detection device comprises a laser in-situ detector, and the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer and the temperature in the epitaxial cavity; or, The in-situ detection device includes a laser in-situ detector and a spectrum analyzer, wherein the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer and the temperature in the epitaxial cavity, and the spectrum analyzer is used to determine the element content of the epitaxial growth of the crystal or the gas element concentration around the wafer; or, The in-situ detection device includes a laser in-situ detector and an imaging device, wherein the laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the wafer and the temperature in the epitaxial cavity, and the imaging device is used to detect the growth shape state information of the crystal epitaxial layer; or, The in-situ detection device includes a laser in-situ detector, a spectrometer and an imaging device. The laser in-situ detector is used to detect the curvature of the crystal epitaxial layer, the temperature of the chip and the temperature inside the epitaxial cavity. The spectrometer is used to determine the element content of the epitaxial growth of the chip or the gas element concentration around the chip. The imaging device is used to detect the growth shape state information of the crystal epitaxial layer.

9. The vapor phase epitaxy apparatus according to claim 7, characterized in that: The gas shower head comprises multiple layers of transparent quartz layers, and gas channels are arranged in the multiple layers of transparent quartz layers.

10. The vapor phase epitaxy apparatus according to claim 8, characterized in that: The gas shower head avoids the laser path of the laser in-situ detector; or The gas shower head is provided with a through hole, and the through hole is used for the laser penetration of the laser in-situ detector.

11. The vapor phase epitaxy apparatus according to claim 7, characterized in that: The epitaxial furnace body is connected to a first heating and pressurizing unit for heating and pressurizing the epitaxial cavity, and the raw material boat chamber is connected to a second heating and pressurizing unit for heating and pressurizing the interior of the raw material boat chamber.

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