Semiconductor process device and semiconductor equipment

Abstract

The utility model provides a semiconductor process device and semiconductor equipment. The device comprises a motion control structure, a position sensor, a cleaning head and a scraper blade, the position sensor is fixedly connected with the cleaning head; the position sensor is electrically connected with the cleaning head to control the position movement of the cleaning head; the surface of the cleaning head is provided with cleaning bristles with hardness larger than that of burrs on the inner wall of the slit structure. And the scraper is fixed with the cleaning head. The cleaning brush with the hardness larger than that of the burrs on the inner wall of the slit is used for brushing the burrs, the scrapers are matched to scrape the brushed burrs out of the slit, the burrs on the inner wall of the slit are cleaned on the premise that the slit structure is not disassembled, uniformity of particle beams emitted from the slit is guaranteed, the burr cleaning time is shortened, the burr cleaning complexity is reduced, and the production efficiency is improved; meanwhile, the cleaning head can enter and exit the slit conveniently through a motion control structure; the limiting plate limits the depth of the cleaning head entering the slit, so that the cleaning efficiency is improved; the hardness of the cleaning bristles is smaller than that of the inner wall of the slit structure, and the inner wall of the slit structure is prevented from being damaged.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductor equipment, and particularly relates to a semiconductor process device and a semiconductor equipment. Background Art

[0002] In the semiconductor industry, when a high current ion implantation device (high current IMP tool) is used to emit particles such as germanium, boron fluoride, and carbon, since the ion source containing tungsten elements will undergo a chemical reaction with these emitted particle elements, a layer of sharp metal tungsten burrs will grow on the inner wall of the ion source slit (source slit), seriously interfering with the beam uniformity of the emitted particles of the device.

[0003] In the prior art, when such a layer of sharp metal tungsten burrs grows on the ion source slit and the beam uniformity of the emitted particles is interfered, generally, the entire ion source chamber of the emitted particle beam is evacuated, and then the ion source slit is removed from the overall ion source chamber, and a scraper is used to grind the metal burrs on the ion source slit flat.

[0004] Although such a treatment method can completely remove the metal burrs, the actions from evacuating the ion source chamber, removing the ion source slit, to reinstalling the ion source slit, vacuum treating the ion source chamber, and monitoring the machine recovery state (monitor) later require at least more than 6 hours, which will seriously prolong the machine recovery time after cleaning the burrs, is very disadvantageous to the entire production progress, requires a large amount of manpower for complex operations, increases the labor cost, and is also not conducive to maintaining the service life of the ion source chamber.

[0005] Therefore, there is an urgent need for a structure or method that can improve the removal efficiency of the burrs on the ion source slit.

[0006] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solutions of the present application and facilitating the understanding of those skilled in the art, and it cannot be considered that the above technical solutions are well-known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Utility Model

[0007] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide a semiconductor process device and a semiconductor equipment, which are used to solve the problems of long time consumption and complex operation for removing the burrs on the inner wall of the ion source slit in the prior art.

[0008] To achieve the above purpose and other related purposes, the present utility model provides the following technical solutions:

[0009] In a first aspect, the present utility model provides a semiconductor processing apparatus, which includes: a motion control structure, a position sensor, a cleaning head, and a scraper;

[0010] The position sensor is fixedly connected to the cleaning head through a fixing structure; the position sensor is electrically connected to the cleaning head to sense the position signal of the cleaning head; the motion control structure is electrically connected to the position sensor to receive the position signal of the cleaning head sensed by the position sensor; the motion control structure is electrically connected to the cleaning head to control the movement of the cleaning head;

[0011] Cleaning bristles are fixed on the surface of the cleaning head to clean the burrs on the inner wall of the slit structure to be cleaned, and the hardness of the cleaning bristles is greater than the hardness of the burrs on the inner wall of the slit structure; the scraper is fixed to the cleaning head, and there is a first preset distance between the scraper and the cleaning bristles, and the scraper is used to scrape out the burrs broken by the cleaning bristles from the slit structure.

[0012] Optionally, the motion control structure includes a lifting controller, a rotation controller, a telescopic controller, and a central control shaft; the lifting controller is used to control the lifting of the cleaning head along the direction of the central control shaft, the rotation controller is used to control the rotation of the cleaning head around the central control shaft, and the telescopic controller is used to control the radial expansion and contraction of the cleaning head with the central control shaft as the center; the lifting controller, the rotation controller, and the telescopic controller cooperate to control the cleaning head to enter and exit the slit structure to be cleaned and clean the burrs on the inner wall of the slit structure.

[0013] Optionally, the fixing structure is a straight arm, the position sensor and the cleaning head are respectively fixed at both ends of the straight arm, and the position of the straight arm between the position sensor and the cleaning head is rotatably connected to the central control shaft.

[0014] Optionally, the semiconductor processing apparatus further includes a limit plate; the limit plate is fixedly connected to the cleaning head; there is a second preset distance between the limit plate and the head of the cleaning head for entering the slit structure, so that after the cleaning head enters the slit structure to a depth of the second preset distance, it is stopped from entering the slit structure due to the abutment of the limit plate and the outer wall of the slit structure.

[0015] Optionally, the head of the cleaning head is a conical head.

[0016] Optionally, the cleaning bristles are metal bristles.

[0017] Optionally, the scraper is a rubber scraper.

[0018] Optionally, the cleaning bristles are fixed on the side wall surface of the cleaning head, the diameter length of the side wall of the cleaning head is smaller than the slit width of the inner wall of the slit structure, and the hardness of the cleaning bristles is smaller than the hardness of the inner wall of the slit structure.

[0019] In a second aspect, the present invention provides a semiconductor device, the semiconductor device includes a slit structure, and the semiconductor device uses any one of the above semiconductor process devices to clean the burrs on the inner wall of the slit structure.

[0020] Optionally, the semiconductor device is an ion implantation device.

[0021] As described above, the semiconductor process device and the semiconductor device of the present invention have the following beneficial effects:

[0022] By providing cleaning bristles with a hardness greater than the burrs on the inner wall of the slit, the present invention can brush off the connection between the burrs and the inner wall of the slit, and cooperate with the scraper to scrape out the brushed burrs from the slit, so as to clean the burrs on the inner wall of the slit without removing the slit structure, ensure the uniformity of the particle beam emitted from the slit, and at the same time reduce the time and complexity of cleaning the burrs, which is beneficial to improving production efficiency;

[0023] The present invention cooperates with the motion control structure to control the cleaning head, improving the convenience of the cleaning head entering and exiting the inner wall of the slit;

[0024] The present invention uses the limiting plate to limit the depth of the cleaning head entering the slit, improving the cleaning efficiency of the cleaning head;

[0025] By setting the hardness of the cleaning bristles to be smaller than the hardness of the inner wall of the slit structure, the present invention avoids damaging the inner wall of the slit structure. Description of the Drawings

[0026] Figure 1 It shows a schematic side view of the semiconductor process device in the present invention.

[0027] Figure 2 It shows a schematic top view of the semiconductor process device in the present invention.

[0028] Figure 3 It shows a schematic front view of the semiconductor process device in the present invention.

[0029] Figure 4 It shows a schematic diagram of the semiconductor process device in the present invention when cleaning the slit structure.

[0030] Description of Component Numbers

[0031] 10. Cleaning head; 11. Scraper; 12. Cleaning bristles; 13. Conical head; 14. Central axis; 15. Limiting plate; 20. Position sensor; 21. Straight arm; 30. Motion control structure; 31. Rotating motor; 32. Telescopic motor; 33. Central control axis; 40. Ion source chamber; 41. Slit structure; 50. Rotation direction. Detailed implementation manners

[0032] The following uses specific specific examples to illustrate the implementation manners of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model.

[0033] When detailing the embodiments of the present utility model, for the convenience of description, the schematic diagrams showing the device structure will be enlarged locally in a non-general proportion, and the schematic diagrams are only examples, and they should not limit the protection scope of the present utility model here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0034] For the convenience of description, spatial relationship terms such as "beneath", "below", "lower than", "under", "above", "on" may be used here to describe the relationship between an element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to include other directions of the device in use or operation in addition to the directions depicted in the drawings.

[0035] In the context of the present application, the structure where the first feature is "above" the second feature may include an embodiment where the first and second features are formed in direct contact, and may also include an embodiment where additional features are formed between the first and second features, so that the first and second features may not be in direct contact.

[0036] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present utility model in a schematic manner. Therefore, only the components related to the present utility model are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in its actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0037] As Figures 1 - 3 shown, the present utility model provides a semiconductor process device, where Figure 1 is a side view of the semiconductor process device, Figure 2 is a top view of the semiconductor process device, Figure 3Front view of a semiconductor processing apparatus, the semiconductor processing apparatus comprising: a motion control structure 30, a position sensor 20, a cleaning head 10, and a squeegee 11;

[0038] The position sensor 20 is fixedly connected to the cleaning head 10 through a fixing structure; the position sensor 20 is electrically connected to the cleaning head 10 to sense the position signal of the cleaning head 10; the motion control structure 30 is electrically connected to the position sensor 20 to receive the position signal of the cleaning head 10 sensed by the position sensor 20; the motion control structure 30 is electrically connected to the cleaning head 10 to control the movement of the cleaning head 10;

[0039] Cleaning bristles 12 are fixed on the surface of the cleaning head 10 to clean the burrs on the inner wall of the slit structure 41 to be cleaned, and the hardness of the cleaning bristles 12 is greater than the hardness of the burrs on the inner wall of the slit structure 41; the squeegee 11 is fixed to the cleaning head 10, and there is a first preset distance between the squeegee 11 and the cleaning bristles 12, and the squeegee 11 is used to scrape out the burrs cut off by the cleaning bristles 12 from the slit structure 41.

[0040] In the prior art, when a high current ion implantation device (high current IMP tool) is used to emit particles such as germanium, boron fluoride, and carbon, since the ion source containing tungsten elements will undergo a chemical reaction with these emitted particle elements, a layer of sharp metal tungsten burrs will grow on the inner wall of the ion source slit, seriously interfering with the beam uniformity of the emitted particle beam of the device. When this problem occurs, usually the entire ion source chamber 40 of the emitted particle beam is evacuated, and then the ion source slit is removed from the overall ion source chamber 40, and a scraper is used to grind the metal burrs on the ion source slit. Although such a treatment method can completely remove the metal burrs, actions such as evacuating the ion source chamber 40, removing the ion source slit, reinstalling the ion source slit, evacuating the ion source chamber 40, and monitoring the machine recovery state (monitor) at a later stage take at least more than 6 hours, which will seriously extend the machine recovery time after cleaning the burrs, is very unfavorable for the entire production schedule, requires a large amount of manpower for complex operations, increases the labor cost, and is also not conducive to maintaining the service life of the ion source chamber 40.

[0041] As Figure 4The figure shows a schematic diagram of using the semiconductor process device of the present invention to remove burrs on the inner wall of the slit structure 41. The present invention is provided with cleaning bristles 12 on the cleaning head 10 with a hardness greater than that of the burrs on the inner wall of the slit structure 41, so that the cleaning bristles 12 can brush off the connection between the burrs and the inner wall of the slit structure 41. At the same time, the scraping plate 11 can scrape out the burrs brushed off by the cleaning bristles 12 from the inner wall of the slit structure 41. Without de-vacuating the ion source chamber 40 to blow out or adsorb the gas to blow out the scraped burrs from the slit structure 41, it is possible to realize that while the cleaning head 10 scrapes off the burrs, the scraping plate 11 scrapes out the scraped metal burrs from the inner wall of the slit structure 41 in a vacuum environment, reducing the time and complexity of cleaning the burrs on the inner wall of the slit structure 41, reducing the labor cost and equipment cost required for cleaning the burrs on the inner wall of the slit structure 41, being beneficial to improving production efficiency, and ensuring the uniformity of the particle beam emitted from the slit structure 41. In addition, with the cooperation of the position sensor 20 for sensing the position of the cleaning head 10 and the motion control structure 30 for controlling the position of the cleaning head 10, it is possible to conveniently and quickly control the cleaning head 10 to enter and exit the slit structure 41 and perform the motion of removing the burrs on the inner wall of the slit structure 41. Since the motion control structure 30 can realize the control of the cleaning head 10 for cleaning the burrs on the inner wall of the slit structure 41 through fully automated sensing feedback, it is not necessary to perform operations such as de-vacuating, removing the ion source slit, reinstalling the slit structure 41 later, performing vacuum treatment on the ion source chamber 40, and monitoring the restart state (monitor) to remove the burrs, further improving the restart efficiency after burr cleaning and reducing the additional impact on the ion source chamber 40 and the slit structure 41.

[0042] In one embodiment, the motion control structure 30 includes a lifting controller (not shown in the figure), a rotation controller, a telescopic controller, and a central control shaft 33. The lifting controller is used to control the lifting of the cleaning head 10 along the direction of the central control shaft 33. The rotation controller is used to control the rotation of the cleaning head 10 around the central control shaft 33. The telescopic controller is used to control the radial expansion and contraction of the cleaning head 10 with the central control shaft 33 as the center. The lifting controller, the rotation controller, and the telescopic controller cooperate to control the cleaning head 10 to enter and exit the slit structure 41 to be cleaned and clean the burrs on the inner wall of the slit structure 41.

[0043] The utility model realizes the precise control of the three-dimensional motion state of the cleaning head 10 by setting the motion control structure 30 to control the lifting, rotation and telescoping of the cleaning head 10, which is beneficial to improving the efficiency of deburring. The presence of the rotation controller enables the cleaning head 10 to remove burrs at different positions on the inner wall of the slit structure 41 by rotation, ensuring that all burrs on the inner wall of the slit structure 41 are removed and improving the uniformity of the particle beam emitted from the slit structure 41. The presence of the lifting controller enables the cleaning head 10 to move out of the inner wall of the slit structure 41 under the control of the rotation controller and then lower to a position where it does not affect the particle beam emitted from the slit structure 41 and is not affected by the particle beam emitted from the slit structure 41, ensuring the service life of the semiconductor process device and the working performance of the slit structure 41. The presence of the telescoping controller enables the cleaning head 10 to approach the slit structure 41 when it reaches the height of the inner wall of the slit structure 41 until the cleaning head 10 can enter the slit structure 41 by rotation and brush all the surfaces with burrs on the inner wall of the slit structure 41.

[0044] In one embodiment, as Figure 1 shown, the rotation controller can be realized by a rotation motor 31 connected to the central control shaft 33. The rotation direction 50 shown in the figure is only for illustration and can also be the opposite rotation direction.

[0045] In one embodiment, as Figure 1 shown, the telescoping controller can be realized by a telescoping motor 32 connected to the cleaning head 10.

[0046] In one embodiment, the motion control structure 30 is a three-dimensional manipulator.

[0047] Specifically, the motion control structure 30 can achieve three-dimensional position control of the cleaning head 10 through any suitable structure or driving method.

[0048] In one embodiment, as Figure 1 shown, the fixing structure is a straight arm 21. The position sensor 20 and the cleaning head 10 are respectively fixed at both ends of the straight arm 21. The position of the straight arm 21 between the position sensor 20 and the cleaning head 10 is rotatably connected to the central control shaft 33.

[0049] The present invention sets the fixing structure as a straight arm 21, so that the position sensor 20 and the cleaning head 10 are respectively fixed at both ends of the straight arm 21. In this way, the position sensed by the position sensor 20 can directly obtain the actual position of the cleaning head 10 through the position processing of 180° rotation, ensuring the relative position fixation between the position sensor 20 and the cleaning head 10 and not easily affecting the normal operation of the cleaning head 10.

[0050] In one embodiment, the fixing structure may also be other suitable structures, and the position sensor 20 may also be fixed on the same side as the cleaning head 10 or other suitable positions for position sensing of the cleaning head 10, which are all within the protection scope of the present utility model.

[0051] In one embodiment, the position sensor 20 is a laser sensor.

[0052] In one embodiment, the semiconductor process device further includes a limiting plate 15; the limiting plate 15 is fixedly connected to the cleaning head 10; there is a second preset distance between the limiting plate 15 and the head of the cleaning head 10 for entering the slit structure 41, so that after the cleaning head 10 enters the slit structure 41 to a depth of the second preset distance, it is stopped from entering the slit structure 41 by the abutment of the limiting plate 15 and the outer wall of the slit structure 41.

[0053] The present utility model uses the limiting plate 15 to limit the depth of the cleaning head 10 entering the slit structure 41. When the depth of the cleaning head 10 entering the slit structure 41 reaches the second preset distance, the limiting plate 15 just abuts against the outer surface of the slit structure 41, thereby preventing the cleaning head 10 from further entering the slit structure 41, so that the cleaning head 10 only penetrates into the slit structure 41 to the minimum depth required, to improve the cleaning efficiency of the cleaning head 10 and reduce the influence on the inside of the slit structure 41 generated by the cleaning head 10.

[0054] In one embodiment, as Figure 1 shown, the semiconductor process device includes two "L"-shaped limiting plates 15. Each limiting plate 15 includes a mounting block and a limiting block. The mounting block is perpendicular to the limiting block. The mounting block is perpendicular to the central axis 14 of the cleaning head 10. The limiting block is parallel to the central axis 14 of the cleaning head 10. The minimum distance between the limiting block and the head of the cleaning head 10 is the second preset distance; when the head of the cleaning head 10 enters the inner wall of the slit structure 41 to a depth of the second preset distance, the limiting block abuts against the outer surface of the slit structure 41 to prevent the cleaning head 10 from continuing to penetrate into the slit structure 41.

[0055] Specifically, the limiting plate 15 may also be other suitable structures, shapes or quantities, which are all within the protection scope of the present utility model.

[0056] In one embodiment, as Figure 1 shown, the head of the cleaning head 10 is a conical head 13.

[0057] The present utility model makes the cleaning head 10 easier to enter the inner wall of the slit structure 41 by setting the head of the cleaning head 10 as the conical head 13, which is beneficial to the smoothness of the cleaning brush 12 entering the slit structure 41 and further improves the cleaning efficiency of the cleaning head 10.

[0058] Specifically, the head of the cleaning head 10 can also be of other suitable shapes, all within the protection scope of the present utility model.

[0059] In one embodiment, the cleaning bristles 12 are metal bristles.

[0060] By setting the cleaning bristles 12 as metal bristles, the present utility model is conducive to adapting to the process of manufacturing the cleaning head 10. At the same time, it is easy to remove the common metal tungsten burrs on the inner wall of the slit structure 41, which is beneficial to reducing the preparation cost of the semiconductor process device and improving the feasibility of practical applications.

[0061] Preferably, the material of the cleaning bristles 12 is tungsten steel material with a high melting point.

[0062] Specifically, the cleaning bristles 12 can also be made of other materials with a strength greater than that of the burrs.

[0063] In one embodiment, the scraper 11 is a rubber scraper 11.

[0064] By setting the scraper 11 as a rubber scraper 11, the present utility model makes it suitable for scraping off the broken burrs in terms of flexibility and friction, so as to ensure that all the broken burrs can be scraped out from the inner wall of the slit structure 41 and ensure the burr removal effect.

[0065] In one embodiment, as Figure 2 shown, including 1 scraper 11. Before the cleaning head 10 enters the slit structure 41 by aligning with the aperture of the slit structure 41, the connection line between the scraper 11 and the central axis 14 of the cleaning head 10 is on the plane where the aperture of the slit structure 41 is located, so that when the cleaning head 10 enters the slit structure 41, the scraper 11 can also enter the slit structure 41.

[0066] Specifically, the shape, size, material and position of the scraper 11 can all be adjusted according to requirements, as long as the broken burrs can be scraped out from the inner wall of the slit.

[0067] In one embodiment, the cleaning bristles 12 are fixed on the side wall surface of the cleaning head 10. The side wall diameter length of the cleaning head 10 is smaller than the slit width of the inner wall of the slit structure 41, and the hardness of the cleaning bristles 12 is smaller than the hardness of the inner wall of the slit structure 41.

[0068] By setting the hardness of the cleaning bristles 12 to be smaller than the hardness of the inner wall of the slit structure 41, the present utility model enables the cleaning bristles 12 to remove burrs without damaging the inner wall of the slit structure 41 itself, thereby improving the service life of the slit structure 41.

[0069] In one embodiment, the method of using the semiconductor process apparatus is as follows: when it is found that the uniformity of the particle beam emitted from the slit structure 41 deteriorates, the ion source is turned off; the motion control structure 30 controls the lifting motion of the cleaning head 10, and the position sensor 20 senses the position of the cleaning head 10 and feeds it back to the motion control structure 30 until the position sensor 20 detects the height of the cleaning head 10 at the preset position of the aperture of the slit structure 41; the motion control structure 30 controls the cleaning head 10 to extend radially away from the central control axis 33 with the central control axis 33 as the center until the limiting plate 15 abuts against the slit structure 41; the motion control structure 30 controls the cleaning head 10 to rotate into the inner wall of the slit structure 41 in the first rotation direction. After the cleaning head 10 rotates a preset angle so that the cleaning head 10 passes through all the surfaces that need to be cleaned on the inner wall of the slit structure 41, it rotates the same angle in the second rotation direction to thoroughly clean the burrs on the cleaning head 10; again, control the cleaning head 10 to rotate in the first rotation direction until it leaves the inner wall of the slit structure 41; the motion control structure 30 controls the cleaning head 10 to contract radially towards the central control axis 33 with the central control axis 33 as the center, and the motion control structure 30 controls the cleaning head 10 to descend to a safe position; restart the ion source.

[0070] Specifically, the semiconductor process apparatus can be inside or outside the ion source chamber 40, but the cleaning head 10 and the moving components for moving the cleaning head 10 need to be inside the ion source chamber 40 to ensure that burr cleaning can be carried out without de-vacuuming.

[0071] Specifically, when the cleaning head 10 cleans the burrs on the inner wall of the slit structure 41, it can rotate an appropriate number of times and angles as needed, and the direction of the cleaning head 10 entering and leaving the slit structure 41 can also be adjusted as needed, all within the protection scope of the present invention.

[0072] Specifically, other suitable methods can also be used to use the semiconductor process apparatus.

[0073] The present invention also provides a semiconductor device, which includes a slit structure 41, and the semiconductor device uses any one of the above-mentioned semiconductor process apparatuses to clean the burrs on the inner wall of the slit structure 41.

[0074] In one embodiment, the semiconductor device is an ion implantation device.

[0075] Specifically, although the present invention is mainly used to solve the problem of removing burrs generated on the inner wall of the slit structure 41 of the ion implantation device, it can also be applied to any other device that needs to remove burrs on the inner wall of the slit, all within the protection scope of the present invention.

[0076] In summary, for the semiconductor process device and semiconductor equipment of the present utility model, by providing cleaning bristles with a hardness greater than that of the burrs on the inner wall of the slit, the connection between the burrs and the inner wall of the slit can be brushed off. In cooperation with a scraper, the brushed-off burrs are scraped out of the slit, so that the burrs on the inner wall of the slit can be cleaned without removing the slit structure, ensuring the uniformity of the particle beam emitted from the slit. At the same time, the time and complexity of cleaning the burrs are reduced, which is beneficial to improving production efficiency. Meanwhile, in cooperation with the motion control structure for controlling the cleaning head, the convenience of the cleaning head entering and exiting the inner wall of the slit is improved. In addition, a limiting plate is used to limit the depth of the cleaning head entering the slit, improving the cleaning efficiency of the cleaning head. Finally, by setting the hardness of the cleaning bristles to be less than the hardness of the inner wall of the slit structure, damage to the inner wall of the slit structure is avoided.

[0077] Therefore, the present utility model effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0078] The above embodiments are only illustrative of the principles and effects of the present utility model, and are not used to limit the present utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present utility model. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present utility model should still be covered by the claims of the present utility model.

Claims

1. A semiconductor process device, characterized in that: The semiconductor process device comprises: a motion control structure, a position sensor, a cleaning head and a scraper; The position sensor is fixedly connected to the cleaning head via a fixed structure; the position sensor is electrically connected to the cleaning head to sense the position signal of the cleaning head; the motion control structure is electrically connected to the position sensor to receive the position signal of the cleaning head sensed by the position sensor; the motion control structure is electrically connected to the cleaning head to control the movement of the cleaning head; Cleaning bristles are fixed on the surface of the cleaning head to clean the burrs on the inner wall of the slit structure to be cleaned, and the hardness of the cleaning bristles is greater than the hardness of the burrs on the inner wall of the slit structure; the scraper is fixed to the cleaning head, and there is a first preset distance between the scraper and the cleaning bristles. The scraper is used to scrape the burrs broken by the cleaning bristles out of the slit structure.

2. The semiconductor process device according to claim 1, characterized in that: The motion control structure includes a lifting controller, a rotation controller, a telescopic controller and a central control axis; the lifting controller is used to control the lifting and lowering of the cleaning head along the direction of the central control axis, the rotation controller is used to control the cleaning head to rotate around the central control axis, and the telescopic controller is used to control the radial telescopic extension of the cleaning head around the central control axis; the lifting controller, the rotation controller and the telescopic controller cooperate to control the cleaning head to enter and exit the slit structure to be cleaned and to clean the burrs on the inner wall of the slit structure.

3. The semiconductor process device according to claim 2, characterized in that: The fixed structure is a straight arm, the position sensor and the cleaning head are fixed at two ends of the straight arm respectively, and the straight arm is rotatably connected to the central control shaft at a position between the position sensor and the cleaning head.

4. The semiconductor process device according to claim 1, characterized in that: The semiconductor process device also includes a limit plate; the limit plate is fixedly connected to the cleaning head; there is a second preset distance between the limit plate and the head of the cleaning head used to enter the slit structure, so that after the cleaning head enters the slit structure to a depth of the second preset distance, it stops entering the slit structure due to the contact between the limit plate and the outer wall of the slit structure.

5. The semiconductor process device according to claim 1, characterized in that: The head of the cleaning head is a conical head.

6. The semiconductor process device according to claim 1, characterized in that: The cleaning bristles are metal bristles.

7. The semiconductor process device according to claim 1, characterized in that: The scraper is a rubber scraper.

8. The semiconductor process device according to claim 1, characterized in that: The cleaning bristles are fixed on the side wall surface of the cleaning head, the diameter of the side wall of the cleaning head is smaller than the slit width of the inner wall of the slit structure, and the hardness of the cleaning bristles is smaller than the hardness of the inner wall of the slit structure.

9. A semiconductor device, characterized in that: The semiconductor device comprises a slit structure, and the semiconductor device uses the semiconductor process apparatus described in any one of claims 1 to 8 to clean burrs on the inner wall of the slit structure.

10. The semiconductor device according to claim 9, wherein: The semiconductor device is an ion implantation device.

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