Voltage bleeder circuit and energy storage device
By designing a voltage relief circuit including bias, enable, drive and discharge circuits, the problem that the residual voltage cannot be reduced after power supply products is powered off is solved, and voltage relief is realized after power is discharged in the energy storage equipment, reducing the power consumption and heat of the resistor.
Patent Information
- Application Number
- CN202422173937.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-05
- Publication Date
- 2025-06-24
- Estimated Expiration
- 2034-09-05
AI Technical Summary
After the power supply products are powered off, the residual voltage of the internal voltage cannot be lower than the safety voltage, resulting in safety hazards, and the resistance continuous discharge scheme has problems with high power consumption and heat.
A voltage relief circuit is designed, including a bias circuit, an enable circuit, a driving circuit and a discharge circuit. The driving circuit outputs a driving signal or stops its operation through the control signal of the microcontroller. The discharge circuit discharges the bus capacitor voltage when receiving the driving signal.
The voltage discharge is only performed after the energy storage equipment is powered off to avoid unnecessary voltage discharge during normal operation, reducing the power consumption and heat of the discharge resistance, thereby reducing the overall power consumption of the energy storage equipment.
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Figure CN223024298U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of voltage discharge, and particularly to a voltage discharge circuit and an energy storage device. Background Art
[0002] With the rapid development of power electronics technology, various household power supply products have emerged continuously, bringing great convenience to our lives. During the use and maintenance of household power supply products, it is necessary to ensure compliance with safety regulations to avoid electric shock accidents; therefore, it is stipulated that after the power supply product is powered off for a certain period of time, the residual voltage inside needs to be lower than the safety voltage value. For example: after power-off for five minutes, the voltage of the inert components inside the power supply product needs to be lower than the safety voltage of 60V.
[0003] Currently, most power supply products adopt the scheme of continuous resistance discharge. However, this scheme has the problem of relatively high power consumption and heat generated by the resistor. Utility Model Content
[0004] Based on this, it is necessary to provide a voltage discharge circuit and an energy storage device to reduce the power consumption and heat generated by the discharge resistor.
[0005] In the first aspect, a voltage discharge circuit is provided. The voltage discharge circuit includes a bias circuit, an enable circuit, a drive circuit, and a discharge circuit; the drive circuit is respectively connected to the bias circuit, the enable circuit, and the discharge circuit;
[0006] The bias circuit is used to provide a bias voltage for the drive circuit;
[0007] The enable circuit is used to output an enable signal to the drive circuit according to the control signal of the microcontroller unit;
[0008] The drive circuit is used to output a drive signal or stop working based on the bias voltage and the enable signal;
[0009] The discharge circuit is used to discharge the voltage of the bus capacitor when receiving the drive signal.
[0010] In some embodiments, the enable circuit is used to output a first enable signal to the drive circuit according to the control signal of the microcontroller unit, or output a second enable signal to the drive circuit;
[0011] The drive circuit is used to output the drive signal according to the first enable signal and stop working according to the second enable signal.
[0012] In some embodiments, the driving circuit includes a first switch module and a second switch module connected to each other. The first switch module is further connected to the bias circuit and the enabling circuit respectively, and the second switch module is also connected to the bias circuit;
[0013] The first switch module is configured to output a conduction signal to the second switch module based on the bias voltage when receiving the first enabling signal;
[0014] The second switch module is configured to conduct according to the conduction signal and output the driving signal to the discharge circuit based on the bias voltage.
[0015] In some embodiments, the first switch module includes a switching transistor Q1, a resistor R1, and a resistor R2;
[0016] The control electrode of the switching transistor Q1 is connected to the output terminal of the enabling circuit, and is also connected to the first ends of the resistor R1 and the resistor R2; the first electrode of the switching transistor Q1 is connected to the second switch module; the second electrode of the switching transistor Q1 is grounded;
[0017] The second end of the resistor R1 is connected to the bias circuit;
[0018] The second end of the resistor R2 is grounded.
[0019] In some embodiments, the first switch module further includes a voltage stabilizing diode DZ1;
[0020] The anode of the voltage stabilizing diode DZ1 is connected to the control electrode of the switching transistor Q1, and the cathode of the voltage stabilizing diode DZ1 is connected to the first end of the resistor R2.
[0021] In some embodiments, the second switch module includes a switching transistor Q2 and a resistor R3;
[0022] The control electrode of the switching transistor Q2 is connected to the first switch module, the first electrode of the switching transistor Q2 is connected to the bias circuit, and the second electrode of the switching transistor Q2 is connected to the discharge circuit;
[0023] Both ends of the resistor R3 are respectively connected to the control electrode and the first electrode of the switching transistor Q2.
[0024] In some embodiments, the bias circuit includes a resistor R4, a voltage stabilizing diode DZ2, and a storage capacitor C1;
[0025] The first end of the resistor R4 is connected to the bus capacitor, and the second end of the resistor R4 is connected to the cathode of the voltage stabilizing diode DZ2;
[0026] The anode of the voltage stabilizing diode DZ2 is grounded;
[0027] Both ends of the energy storage capacitor C1 are respectively connected to the anode and cathode of the voltage stabilizing diode DZ2.
[0028] In some embodiments, the enabling circuit includes a switching transistor Q3, a resistor R5, and a resistor R6;
[0029] The control electrode of the switching transistor Q3 is respectively connected to the first end of the resistor R5 and the first end of the resistor R6. The first electrode of the switching transistor Q3 is connected to the driving circuit, and the second electrode of the switching transistor Q3 is grounded;
[0030] The second end of the resistor R5 is connected to a microcontroller unit outside the circuit;
[0031] The second end of the resistor R6 is grounded.
[0032] In some embodiments, the discharging circuit includes a switching transistor Q4, a resistor R7, a resistor R8, and a resistor R9;
[0033] The control electrode of the switching transistor Q4 is respectively connected to the first end of the resistor R8 and the first end of the resistor R9. The first electrode of the switching transistor Q4 is connected to the first end of the resistor R7, and the second electrode of the switching transistor Q4 is grounded;
[0034] The second end of the resistor R7 is connected to the bus capacitor;
[0035] The second end of the resistor R8 is connected to the driving circuit;
[0036] The second end of the resistor R9 is grounded.
[0037] In a second aspect, an energy storage device is provided. The energy storage device includes a microcontroller unit and a voltage discharging circuit as described in any one of the first aspect.
[0038] In the above voltage discharging circuit and energy storage device, the voltage discharging circuit includes a bias circuit, an enabling circuit, a driving circuit, and a discharging circuit; the driving circuit is respectively connected to the bias circuit, the enabling circuit, and the discharging circuit; the bias circuit provides a bias voltage for the driving circuit; the enabling circuit outputs an enabling signal to the driving circuit according to a control signal of the microcontroller unit; the driving circuit outputs a driving signal or stops working based on the bias voltage and the enabling signal; the discharging circuit discharges the voltage of the bus capacitor when receiving the driving signal. In the technical solution of the embodiments of the present application, the voltage discharging circuit discharges the voltage of the bus capacitor only after power-off. When the energy storage device is working normally, the discharging circuit does not work, so that the power consumption and heat generated by the discharging resistor can be reduced, thereby reducing the power consumption of the energy storage device. Description of the Drawings
[0039] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other accompanying drawings can be obtained based on these drawings without creative efforts.
[0040] Figure 1 One of the schematic structural diagrams of the voltage discharge circuit of an embodiment;
[0041] Figure 2 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0042] Figure 3 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0043] Figure 4 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0044] Figure 5 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0045] Figure 6 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0046] Figure 7 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0047] Figure 8 Another schematic structural diagram of the voltage discharge circuit of an embodiment;
[0048] Figure 9 Schematic structural diagram of an energy storage device of an embodiment.
[0049] Explanation of reference numerals:
[0050] Voltage discharge circuit 1, microcontroller unit 2;
[0051] Bias circuit 10, enable circuit 20, drive circuit 30, discharge circuit 40;
[0052] First switch module 301, second switch module 302;
[0053] Switch tube Q1, resistor R1, resistor R2, zener diode DZ1;
[0054] Switch tube Q2, resistor R3, resistor R4, zener diode DZ2, energy storage capacitor C1;
[0055] Switching transistor Q3, resistor R5, resistor R6, switching transistor Q4, resistor R7, resistor R8, resistor R9. Detailed implementation
[0056] To facilitate the understanding of this application, the following will provide a more comprehensive description of this application with reference to the relevant drawings. Embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of this application more thorough and comprehensive.
[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used in the specification of this application herein are only for the purpose of describing specific embodiments and are not intended to limit this application.
[0058] It can be understood that the terms "first", "second", etc. used in this application can be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish the first element from another element. For example, without departing from the scope of this application, the first resistor can be called the second resistor, and similarly, the second resistor can be called the first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.
[0059] It can be understood that "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if there is an electrical signal or data transfer between the connected circuits, modules, units, etc.
[0060] It can be understood that "at least one" means one or more, and "a plurality" means two or more. "At least part of an element" means part or all of the element.
[0061] As used herein, the singular forms "a", "an" and "the" may also include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising", "including" or "having", etc. specify the presence of the stated features, wholes, steps, operations, components, parts or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the related listed items.
[0062] With the rapid development of power electronics technology, various household power supply products have emerged continuously, bringing great convenience to our lives. Household power supply products need to ensure compliance with safety regulations during use and maintenance to avoid electric shock accidents; therefore, it is stipulated that after the power supply product is powered off for a certain period of time, the residual voltage inside needs to be lower than the safety voltage value. For example: when the power is cut off for five minutes, the voltage of the inert components inside the power supply product needs to be lower than 60V of the safety voltage.
[0063] Currently, most power supply products adopt the scheme of continuous resistance discharge, that is, the resistor is in the working state even when there is no need to discharge the voltage. Therefore, this scheme has the problem of relatively high power consumption and heat generated by the resistor.
[0064] In view of the above problems, the embodiment of the present application provides a voltage discharge circuit. The voltage discharge circuit includes a bias circuit, an enable circuit, a drive circuit, and a discharge circuit; the drive circuit is respectively connected to the bias circuit, the enable circuit, and the discharge circuit; the bias circuit provides a bias voltage for the drive circuit; the enable circuit outputs an enable signal to the drive circuit according to the control signal of the microcontroller unit (MCU); the drive circuit outputs a drive signal or stops working based on the bias voltage and the enable signal; the discharge circuit discharges the voltage of the bus capacitor when receiving the drive signal. In the technical solution of the embodiment of the present application, the voltage discharge circuit discharges the voltage of the bus capacitor only after the power is turned off. When the energy storage device is working normally, the discharge circuit does not work, so the power consumption and heat generated by the discharge resistor can be reduced. The technical solutions involved in the embodiments of the present application are introduced below.
[0065] In one embodiment, as Figure 1 shown, a voltage discharge circuit 1 is provided. The voltage discharge circuit 1 includes a bias circuit 10, an enable circuit 20, a drive circuit 30, and a discharge circuit 40; the drive circuit 30 is respectively connected to the bias circuit 10, the enable circuit 20, and the discharge circuit 40; the bias circuit 10 is used to provide a bias voltage for the drive circuit 30; the enable circuit 20 is used to output an enable signal to the drive circuit 30 according to the control signal of the microcontroller 2; the drive circuit 30 is used to output a drive signal or stop working based on the bias voltage and the enable signal; the discharge circuit 40 is used to discharge the voltage of the bus capacitor CE when receiving the drive signal.
[0066] In the embodiment of the present application, the voltage discharge circuit 1 includes a bias circuit 10, an enable circuit 20, a drive circuit 30, and a discharge circuit 40. The drive circuit 30 is respectively connected to the bias circuit 10, the enable circuit 20, and the discharge circuit 40, and the enable circuit 20 is connected to the microcontroller 2.
[0067] The microcontroller unit 2 outside the voltage discharge circuit 1 outputs different control signals during the normal operation and power-down of the energy storage device. The enabling circuit 20 receives the control signals output by the microcontroller unit 2 and outputs different enabling signals to the driving circuit 30 according to the received different control signals. The biasing circuit 10 can provide a biasing voltage for the driving circuit 30. The driving circuit 30 outputs a driving signal to the discharging circuit 40 according to the biasing voltage and the enabling signal, or stops working according to the biasing voltage and the enabling signal. The discharging circuit 40 discharges the voltage of the bus capacitor CE when receiving the driving signal; and does not discharge the voltage of the bus capacitor CE when the driving circuit 30 stops working.
[0068] In the above embodiment, the voltage discharge circuit includes a biasing circuit, an enabling circuit, a driving circuit and a discharging circuit; the biasing circuit provides a biasing voltage for the driving circuit; the enabling circuit outputs an enabling signal to the driving circuit according to the control signal of the microcontroller unit; the driving circuit outputs a driving signal or stops working based on the biasing voltage and the enabling signal; the discharging circuit discharges the voltage of the bus capacitor when receiving the driving signal. In the technical solution of the embodiment of the present application, when the energy storage device is powered down, the voltage discharge circuit discharges the voltage of the bus capacitor. When the energy storage device is operating normally, the discharging circuit does not work, so that the power consumption and heat generated by the discharge resistor can be reduced.
[0069] In one embodiment, the enabling circuit 20 is configured to output a first enabling signal to the driving circuit 30 or a second enabling signal to the driving circuit 30 according to the control signal of the microcontroller unit 2; the driving circuit 30 is configured to output a driving signal according to the first enabling signal and stop working according to the second enabling signal.
[0070] In the embodiment of the present application, if the energy storage device is powered down normally or abnormally, the microcontroller unit 2 is also powered down and outputs a first control signal to the enabling circuit 20. The enabling circuit 20 receives the first control signal and outputs a first enabling signal according to the first control signal; the driving circuit 30 outputs a driving signal according to the first enabling signal; after the discharging circuit 40 receives the driving signal, it discharges the voltage of the bus capacitor CE.
[0071] If the energy storage device is operating normally and the microcontroller unit 2 is also operating normally, the microcontroller unit 2 outputs a second control signal to the enabling circuit 20. The enabling circuit 20 receives the second control signal and outputs a second enabling signal according to the second control signal; the driving circuit 30 stops working according to the second enabling signal. Since the discharging circuit 40 does not receive the driving signal, it does not discharge the voltage of the bus capacitor CE.
[0072] In the above embodiments, the enabling circuit outputs a first enabling signal or a second enabling signal to the driving circuit according to the control signal of the microcontroller unit; the driving circuit outputs a driving signal according to the first enabling signal and stops working according to the second enabling signal. In the technical solution of the embodiments of the present application, the enabling circuit outputs different enabling signals to the driving circuit according to different received control signals, so that the driving circuit outputs a driving signal only when the microcontroller unit is powered off, and the discharging circuit discharges the voltage of the bus capacitor.
[0073] In one embodiment, as Figure 2 shown, the driving circuit 30 includes a first switch module 301 and a second switch module 302 connected to each other. The first switch module 301 is further connected to the bias circuit 10 and the enabling circuit 20, and the second switch module 302 is further connected to the bias circuit 10; the first switch module 301 is configured to output a conduction signal to the second switch module 302 based on the bias voltage when receiving the first enabling signal; the second switch module 302 is configured to conduct according to the conduction signal and output a driving signal to the discharging circuit 40 based on the bias voltage.
[0074] In the embodiments of the present application, the driving circuit 30 includes a first switch module 301 and a second switch module 302. The first switch module 301 is respectively connected to the second switch module 302, the bias circuit 10 and the enabling circuit 20, and the second switch module 302 is further respectively connected to the bias circuit 10 and the discharging circuit 40.
[0075] When the enabling circuit 20 outputs the first enabling signal, the first switch module 301 receives the first enabling signal and outputs a conduction signal to the second switch module 302 according to the bias voltage provided by the bias circuit 10. After receiving the conduction signal, the second switch module 302 conducts and outputs a driving signal to the discharging circuit 40 according to the bias voltage provided by the bias circuit 10. The discharging circuit 40 receives the driving signal and discharges the voltage of the bus capacitor CE.
[0076] When the enabling circuit 20 outputs the second enabling signal, the first switch module 301 receives the second enabling signal and stops working based on the second enabling signal. Since the first switch module 301 stops working, the second switch module 302 will not conduct, that is, the second switch module 302 also stops working and does not output a driving signal. When the discharging circuit 40 does not receive the driving signal, it does not discharge the voltage of the bus capacitor CE.
[0077] In the above embodiments, the drive circuit includes a first switch module and a second switch module connected to each other. When the first switch module receives a first enable signal, it outputs a conduction signal to the second switch module based on a bias voltage. The second switch module conducts according to the conduction signal and outputs a drive signal to the discharge circuit based on the bias voltage. In the technical solution of the embodiments of the present application, through the control of the first switch module and the second switch module, the voltage discharge circuit can discharge the voltage of the bus capacitor only when the energy storage device is powered off. When the energy storage device is working normally, the discharge circuit does not work, so the power consumption and heat generated by the discharge resistor can be reduced.
[0078] In one embodiment, as Figure 3 shown, the first switch module 301 includes a switching transistor Q1, a resistor R1, and a resistor R2. The control electrode of the switching transistor Q1 is connected to the output terminal of the enable circuit 20 and is also connected to the first ends of the resistor R1 and the resistor R2. The first electrode of the switching transistor Q1 is connected to the second switch module 302. The second electrode of the switching transistor Q1 is grounded to BUS-. The second end of the resistor R1 is connected to the bias circuit 10. The second end of the resistor R2 is grounded to BUS-.
[0079] In the embodiments of the present application, the first switch module 301 includes a switching transistor Q1, a resistor R1, and a resistor R2. The control electrode of the switching transistor Q1 is connected to the output terminal of the enable circuit 20 and is also connected to the common end of the resistor R1 and the resistor R2. The first electrode of the switching transistor Q1 is connected to the second switch module 302. The second electrode of the switching transistor Q1 is grounded to BUS-. The second end of the resistor R1 is connected to the bias circuit 10. The second end of the resistor R2 is grounded to BUS-.
[0080] Taking the switching transistor Q1 as an NMOS transistor as an example, when the enable circuit 20 outputs a first enable signal, the switching transistor Q1 conducts based on the bias voltage of the bias circuit 10 and outputs a conduction signal to the second switch module 302. After receiving the conduction signal, the second switch module 302 outputs a drive signal. The discharge circuit 40 receives the drive signal and discharges the voltage of the bus capacitor CE.
[0081] When the second enable signal output by the enable circuit 20 is received, the switching transistor Q1 turns off and does not output a conduction signal. The second switch module 302 stops working when it does not receive the conduction signal and does not output a drive signal. The discharge circuit 40 does not receive the drive signal and does not discharge the voltage of the bus capacitor CE.
[0082] In the above embodiments, the first switch module includes a switching transistor Q1, a resistor R1, and a resistor R2. In the embodiments of the present application, the second switch module is controlled by controlling the on / off of the switching transistor Q1. When the energy storage device is powered off, a driving signal is output to the discharging circuit, causing the discharging circuit to discharge the voltage of the bus capacitor. When the energy storage device is operating normally, the discharging circuit is not driven to operate, and the voltage of the bus capacitor is not discharged, thereby reducing the power consumption and heat generated by the discharging resistor.
[0083] In one embodiment, as Figure 4 shown, the first switch module 301 further includes a voltage stabilizing diode DZ1; the anode of the voltage stabilizing diode DZ1 is connected to the control electrode of the switching transistor Q1, and the cathode of the voltage stabilizing diode DZ1 is connected to the first end of the resistor R2.
[0084] In the embodiments of the present application, the first switch module 301 may further include a voltage stabilizing diode DZ1. The anode of the voltage stabilizing diode DZ1 is connected to the control electrode of the switching transistor Q1, and the cathode of the voltage stabilizing diode DZ1 is connected to the first end of the resistor R2.
[0085] The voltage stabilizing diode DZ1 can limit the output voltage of the driving circuit 30. When the bias voltage is lower than the regulated voltage value of the voltage stabilizing diode DZ1, the driving circuit 30 will not output a driving signal, effectively protecting the discharging circuit 40 and avoiding the problem of overheating damage caused by insufficient conduction of the switching transistor in the discharging circuit 40 due to too low a voltage of the driving signal.
[0086] In the above embodiments, the first switch module 301 further includes a voltage stabilizing diode DZ1. In the technical solution of the embodiments of the present application, by limiting the output voltage of the driving circuit through the voltage stabilizing diode DZ1, the discharging circuit can be effectively protected.
[0087] In one embodiment, as Figure 5 shown, the second switch module 302 includes a switching transistor Q2 and a resistor R3; the control electrode of the switching transistor Q2 is connected to the first switch module 301, the first electrode of the switching transistor Q2 is connected to the bias circuit 10, and the second electrode of the switching transistor Q2 is connected to the discharging circuit 40; both ends of the resistor R3 are respectively connected to the control electrode and the first electrode of the switching transistor Q2.
[0088] In the embodiments of the present application, the second switch module 302 includes a switching transistor Q2 and a resistor R3; the control electrode of the switching transistor Q2 is connected to the switching transistor Q1, the first electrode of the switching transistor Q2 is connected to the bias circuit 10, and the second electrode of the switching transistor Q2 is connected to the discharging circuit 40; both ends of the resistor R3 are respectively connected to the control electrode and the first electrode of the switching transistor Q2.
[0089] Taking the switching transistor Q1 as an NMOS transistor and the switching transistor Q2 as a PMOS transistor as an example, when the enabling circuit 20 outputs a first enabling signal, the switching transistor Q1 conducts based on the bias voltage of the bias circuit 10, outputs a low level to the switching transistor Q2, and the switching transistor Q2 conducts at the low level and outputs a driving signal based on the bias voltage; the discharging circuit 40 receives the driving signal and discharges the voltage of the bus capacitor CE.
[0090] When the second enabling signal output by the enabling circuit 20 is received, the switching transistor Q1 turns off, then the switching transistor Q2 stops working at the high level and does not output a driving signal. The discharging circuit 40 does not receive the driving signal and does not discharge the voltage of the bus capacitor CE.
[0091] In the above embodiment, the second switching module includes a switching transistor Q2 and a resistor R3. In the technical solution of the embodiment of the present application, by controlling the on / off of the switching transistor Q2, it is possible to drive the discharging circuit to work, discharge the voltage of the bus capacitor, or not drive the discharging circuit to work and not discharge the bus capacitor, so that the discharging resistor is not always in a working state, and thus the power consumption and heat generated by the discharging resistor can be reduced.
[0092] In one embodiment, as Figure 6 shown, the bias circuit 10 includes a resistor R4, a zener diode DZ2, and a storage capacitor C1; the first end of the resistor R4 is connected to the bus capacitor CE, the second end of the resistor R4 is connected to the cathode of the zener diode DZ2; the anode of the zener diode DZ2 is grounded to BUS-; both ends of the storage capacitor C1 are respectively connected to the anode and the cathode of the zener diode DZ2.
[0093] In the embodiment of the present application, the bias circuit 10 includes a resistor R4, a zener diode DZ2, and a storage capacitor C1; the first end of the resistor R4 is connected to BUS+ of the bus capacitor CE, the second end of the resistor R4 is connected to the cathode of the zener diode DZ2; the anode of the zener diode DZ2 is grounded to BUS-. Both ends of the storage capacitor C1 are respectively connected to the anode and the cathode of the zener diode DZ2.
[0094] When the voltage of the bus capacitor CE is greater than the zener voltage of the zener diode DZ2, the capacitor R1 and the zener diode DZ2 form a voltage dividing circuit, and the common end of the resistor R1 and the zener diode DZ2 outputs a bias voltage.
[0095] Taking the switching transistor Q1 as an NMOS transistor and the switching transistor Q2 as a PMOS transistor as an example, when the enabling circuit 20 outputs a first enabling signal, the switching transistor Q1 conducts according to the bias voltage output by the common end of the resistor R1 and the zener diode DZ2, and outputs a low level to the switching transistor Q2; the switching transistor Q2 conducts at the low level and outputs a driving signal based on the bias voltage; the discharging circuit 40 receives the driving signal and discharges the voltage of the bus capacitor CE.
[0096] When enabling the second enabling signal output by the enabling circuit 20, the switching transistor Q1 is turned off, then the switching transistor Q2 is turned off at a high level and does not output a driving signal. The discharging circuit 40 does not receive the driving signal and does not discharge the voltage of the bus capacitor CE.
[0097] When discharging the voltage of the bus capacitor CE, when the voltage of the bus capacitor CE is discharged to be less than the regulated voltage of the voltage regulator diode DZ2, the common terminal of the resistor R1 and the voltage regulator diode DZ2 does not output a bias voltage. The switching transistor Q1 and the switching transistor Q2 stop working, and the discharging circuit 40 also stops working and no longer discharges the voltage.
[0098] In the above embodiment, the bias circuit 10 includes a resistor R4, a voltage regulator diode DZ2, and a storage capacitor C1. In the technical solution of the embodiment of the present application, a stable bias voltage can be provided for the driving circuit through the resistor R4 and the voltage regulator diode DZ2, so that the driving circuit can drive the discharging circuit to work when the energy storage device is powered off, and the discharging circuit can stably discharge the voltage of the bus capacitor, thereby improving the safety and reliability of the energy storage device. And, the voltage regulator diode DZ2 can also control the time of voltage discharge, thereby improving the voltage discharge efficiency.
[0099] In one embodiment, as Figure 7 shown, the enabling circuit 20 includes a switching transistor Q3, a resistor R5, and a resistor R6; the control electrode of the switching transistor Q3 is respectively connected to the first ends of the resistor R5 and the resistor R6, the first electrode of the switching transistor Q3 is connected to the driving circuit 30, and the second electrode of the switching transistor Q3 is grounded to BUS-; the second end of the resistor R5 is connected to the microcontroller unit 2 outside the circuit; the second end of the resistor R6 is grounded to BUS-.
[0100] In the embodiment of the present application, the enabling circuit 20 includes a switching transistor Q3, a resistor R5, and a resistor R6; the control electrode of the switching transistor Q3 is connected to the common terminal of the resistor R5 and the resistor R6, the first electrode of the switching transistor Q3 is connected to the control electrode of the switching transistor Q1, and the second electrode of the switching transistor Q3 is grounded to BUS-; the second end of the resistor R5 is connected to the microcontroller unit 2 outside the circuit; the second end of the resistor R6 is grounded to BUS-.
[0101] Taking the switching transistor Q1 and the switching transistor Q3 as NMOS transistors and the switching transistor Q2 as a PMOS transistor as an example, when the microcontroller unit 2 is powered off and outputs a low level or the control signal disappears, the switching transistor Q3 is turned off in this case; the control electrode of the switching transistor Q1 is connected to the common terminal of the resistor R1 and the voltage regulator diode DZ2, and the switching transistor Q1 is turned on based on the bias voltage of the bias circuit 10 and outputs a low level to the switching transistor Q2; the switching transistor Q2 is turned on at a low level and outputs a driving signal based on the bias voltage; the discharging circuit 40 receives the driving signal and discharges the voltage of the bus capacitor CE.
[0102] When the microcontroller unit 2 operates normally, it outputs a high level, and the switching transistor Q3 conducts under the high level. The control electrode of the switching transistor Q1 receives a low level, so the switching transistor Q1 turns off. Since Q1 turns off, the switching transistor Q2 also turns off and does not output a driving signal. The discharge circuit 40 does not receive the driving signal and does not discharge the voltage of the bus capacitor CE.
[0103] In the above embodiment, the enabling circuit 20 includes a switching transistor Q3, a resistor R5, and a resistor R6. In the technical solution of the embodiment of the present application, the switching transistor Q3 can control the on / off of the switching transistor Q1 according to the control signal of the microcontroller unit, so as to realize the operation of the driving discharge circuit when the energy storage device is powered off, and reduce the power consumption and heat generated by the discharge resistor.
[0104] In one embodiment, as Figure 8 shown, the discharge circuit 40 includes a switching transistor Q4, a resistor R7, a resistor R8, and a resistor R9. The control electrode of the switching transistor Q4 is respectively connected to the first ends of the resistor R8 and the resistor R9. The first pole of the switching transistor Q2 is connected to the first end of the resistor R7. The second pole of the switching transistor Q4 is grounded to BUS-. The second end of the resistor R7 is connected to the bus capacitor CE. The second end of the resistor R8 is connected to the driving circuit 30. The second end of the resistor R9 is grounded to BUS-.
[0105] In the embodiment of the present application, the discharge circuit 40 includes a switching transistor Q4, a resistor R7, a resistor R8, and a resistor R9. The control electrode of the switching transistor Q4 is connected to the common end of the resistor R8 and the resistor R9. The first pole of the switching transistor Q2 is connected to the first end of the resistor R7. The second pole of the switching transistor Q4 is grounded to BUS-. The second end of the resistor R7 is connected to BUS+ of the bus capacitor CE. The second end of the resistor R8 is connected to the second pole of the switching transistor Q2. The second end of the resistor R9 is grounded to BUS-.
[0106] Taking the switching transistor Q1, the switching transistor Q3, and the switching transistor Q4 as NMOS transistors and the switching transistor Q2 as a PMOS transistor as an example, when the microcontroller unit 2 is powered off, it outputs a low level, and the switching transistor Q3 turns off under the low level. The control electrode of the switching transistor Q1 is connected to the common end of the resistor R1 and the zener diode DZ2. The switching transistor Q1 conducts based on the bias voltage of the bias circuit 10 and outputs a low level to the switching transistor Q2. The switching transistor Q2 conducts under the low level and outputs a high level based on the bias voltage. The switching transistor Q4 conducts under the high level, and the bus capacitor CE and the resistor R7 form a discharge path, and the voltage of the bus capacitor CE is discharged through the resistor R7 and the switching transistor Q4.
[0107] When the microcontroller unit 2 works normally, it outputs a high level, and the switching transistor Q3 conducts under the high level; the control electrode of the switching transistor Q1 receives a low level, so the switching transistor Q1 turns off. Since Q1 turns off, the switching transistor Q2 also turns off and does not output a driving signal. Due to the existence of the pull-down resistor R9, the switching transistor Q4 turns off, and the bus capacitor CE does not form a discharge path with the resistor R7 and the switching transistor Q4, so the voltage of the bus capacitor CE is not discharged.
[0108] It should be noted that the duration of the discharge process is determined by the capacitance, voltage value of the bus capacitor and the discharge resistor R7. By setting a longer discharge time, the power of the discharge resistor R7 can be reduced, and at the same time, the current flowing through the switching transistor Q4 can be reduced, thus achieving the purpose of reducing the cost of the discharge circuit. And when the control signal output by the microcontroller unit is at a high level, the discharge circuit does not work, and only the bias circuit in the entire voltage discharge circuit is in the power-consuming state, which is much lower than the current level required for normal discharge, achieving the purpose of reducing the standby power consumption.
[0109] In the above embodiment, the discharge circuit 40 includes a switching transistor Q4, a resistor R7, a resistor R8 and a resistor R9. In the technical solution of the embodiment of the present application, by controlling the on-off of the switching transistor Q4, a discharge path can be formed between the discharge resistor R7 and the bus capacitor when the energy storage device is powered off, so as to discharge the voltage of the bus capacitor; while when the energy storage device works normally, no discharge path is formed and the discharge resistor does not work, thereby reducing the power consumption and heat generated by the discharge resistor.
[0110] In one embodiment, as Figure 9 shown, an energy storage device is provided, and the energy storage device includes a microcontroller unit 2 and the voltage discharge circuit 1 in the above embodiment.
[0111] In the embodiment of the present application, the energy storage device includes a microcontroller unit 2 and a voltage discharge circuit 1.
[0112] When the microcontroller unit 2 is powered off, it outputs a low level, and the switching transistor Q3 turns off under the low level; the control electrode of the switching transistor Q1 is connected to the common end of the resistor R1 and the voltage stabilizing diode DZ2, and the switching transistor Q1 conducts based on the bias voltage of the bias circuit 10 and outputs a low level to the switching transistor Q2; the switching transistor Q2 conducts under the low level and outputs a high level based on the bias voltage; the switching transistor Q4 conducts under the high level, and a discharge path is formed between the bus capacitor CE and the resistor R7, and the voltage of the bus capacitor CE is discharged through the resistor R7 and the switching transistor Q4.
[0113] When the microcontroller unit 2 works normally, it outputs a high level, and the switching transistor Q3 conducts under the high level; the control electrode of the switching transistor Q1 receives a low level, so the switching transistor Q1 turns off. Since Q1 turns off, the switching transistor Q2 also turns off and does not output a driving signal. The switching transistor Q4 turns off, and the bus capacitor CE does not form a discharge path with the resistor R7 and the switching transistor Q4, so the voltage of the bus capacitor CE is not discharged.
[0114] In the above embodiments, when the energy storage device is powered off, the voltage discharge circuit discharges the voltage of the bus capacitor. When the energy storage device works normally, the discharge circuit does not work, which can reduce the power consumption and heat generated by the discharge resistor, thereby reducing the power consumption of the energy storage device.
[0115] In the description of this specification, the description with reference to terms such as "some embodiments", "other embodiments", etc. means that the specific features, structures, materials or features described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.
[0116] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.
[0117] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the present application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.
Claims
1. A voltage discharge circuit, characterized in that: The voltage discharge circuit includes a bias circuit, an enabling circuit, a driving circuit and a discharging circuit; the driving circuit is connected to the bias circuit, the enabling circuit and the discharging circuit respectively; The bias circuit is used to provide a bias voltage for the driving circuit; The enabling circuit is used to output an enabling signal to the driving circuit according to a control signal of the micro control unit; The driving circuit is used to output a driving signal or stop working based on the bias voltage and the enable signal; The discharge circuit is used to discharge the voltage of the bus capacitor when receiving the driving signal.
2. The voltage discharge circuit according to claim 1, characterized in that: The enabling circuit is used to output a first enabling signal to the driving circuit according to a control signal of the micro control unit, or to output a second enabling signal to the driving circuit; The driving circuit is used to output the driving signal according to the first enable signal, and stop working according to the second enable signal.
3. The voltage discharge circuit according to claim 2, characterized in that: The driving circuit comprises a first switch module and a second switch module connected to each other, the first switch module is also connected to the bias circuit and the enabling circuit respectively, and the second switch module is also connected to the bias circuit; The first switch module is configured to output a conduction signal to the second switch module based on the bias voltage when receiving the first enable signal; The second switch module is configured to be turned on according to the turn-on signal, and output the drive signal to the discharge circuit based on the bias voltage.
4. The voltage discharge circuit according to claim 3, characterized in that: The first switch module includes a switch tube Q1, a resistor R1 and a resistor R2; The control electrode of the switch tube Q1 is connected to the output end of the enabling circuit, and is connected to the first end of the resistor R1 and the first end of the resistor R2; the first electrode of the switch tube Q1 is connected to the second switch module; the second electrode of the switch tube Q1 is grounded; The second end of the resistor R1 is connected to the bias circuit; The second end of the resistor R2 is grounded.
5. The voltage discharge circuit according to claim 4, characterized in that: The first switch module also includes a voltage regulator tube DZ1; The anode of the voltage regulator tube DZ1 is connected to the control electrode of the switch tube Q1 , and the cathode of the voltage regulator tube DZ1 is connected to the first end of the resistor R2 .
6. The voltage discharge circuit according to claim 4, characterized in that: The second switch module includes a switch tube Q2 and a resistor R3; The control electrode of the switch tube Q2 is connected to the first switch module, the first electrode of the switch tube Q2 is connected to the bias circuit, and the second electrode of the switch tube Q2 is connected to the discharge circuit; Two ends of the resistor R3 are connected to the control electrode and the first electrode of the switch tube Q2 respectively.
7. The voltage discharge circuit according to any one of claims 1 to 6, characterized in that: The bias circuit includes a resistor R4, a voltage regulator tube DZ2 and an energy storage capacitor C1; The first end of the resistor R4 is connected to the bus capacitor, and the second end of the resistor R4 is connected to the cathode of the voltage regulator tube DZ2; The anode of the voltage regulator tube DZ2 is grounded; The two ends of the energy storage capacitor C1 are respectively connected to the anode and cathode of the voltage regulator tube DZ2.
8. The voltage discharge circuit according to any one of claims 1 to 6, characterized in that: The enabling circuit includes a switch tube Q3, a resistor R5 and a resistor R6; The control electrode of the switch tube Q3 is connected to the first end of the resistor R5 and the first end of the resistor R6 respectively, the first electrode of the switch tube Q3 is connected to the drive circuit, and the second electrode of the switch tube Q3 is grounded; The second end of the resistor R5 is connected to a micro control unit outside the circuit; A second end of the resistor R6 is grounded.
9. The voltage discharge circuit according to any one of claims 1 to 6, characterized in that: The discharge circuit includes a switch tube Q4, a resistor R7, a resistor R8 and a resistor R9; The control electrode of the switch tube Q4 is respectively connected to the first end of the resistor R8 and the first end of the resistor R9, the first electrode of the switch tube Q4 is connected to the first end of the resistor R7, and the second electrode of the switch tube Q4 is grounded; The second end of the resistor R7 is connected to the bus capacitor; The second end of the resistor R8 is connected to the driving circuit; The second end of the resistor R9 is grounded.
10. An energy storage device, characterized in that: The energy storage device comprises a micro control unit and a voltage discharge circuit as claimed in any one of claims 1 to 9.