BIPV power generation hollow glass with built-in junction box

Abstract

The utility model provides BIPV (building integrated photovoltaics) power generation hollow glass with a built-in junction box. The BIPV power generation hollow glass comprises a power generation glass layer; a fourth glass layer; the periphery of the power generation glass layer and the periphery of the fourth glass layer form a sealing structure, the power generation glass layer and the fourth glass layer are packaged, the photovoltaic junction box is arranged in the sealing structure on the periphery of the power generation glass layer and the fourth glass layer, and the photovoltaic junction box is arranged in the sealing structure. In addition, the photovoltaic junction box is prevented from being clamped off due to the fact that the photovoltaic junction box is located outside the glass and is easily influenced by external factors, electric leakage is avoided, safety accidents are avoided, and the installation efficiency of the hollow glass of the BIPV power generation curtain wall is further improved.

Description

Technical Field

[0001] This application relates to the technical field of building glass, and particularly to a BIPV power generation insulating glass with an embedded junction box. Background Art

[0002] BIPV (Building Integrated Photovoltaic) refers to the combination of photovoltaic power generation technology and architecture. BIPV has many advantages, such as the effective utilization of the building exterior surface, no need for additional land to build other facilities, saving exterior decoration materials, and alleviating power demand. A photovoltaic curtain wall is an accessory device installed on the exterior wall of a building to absorb solar energy and convert it into electrical energy. The insulating glass of a BIPV power generation curtain wall has obstacles in the installation of curtain wall glass due to the addition of a junction box and wires compared with ordinary insulating glass; for the junction box of BIPV power generation insulating glass, the conventional method is an external connection method. In order to hide the junction box during glass installation, the mainstream method is to place the junction box into the curtain wall sealant joint. However, when the curtain wall sealant joint is narrow, it will cause the glass to be unable to be installed, and even the junction box may be stuck off, resulting in electric leakage and further causing safety accidents. Summary of the Invention

[0003] In view of this, this application provides a BIPV power generation insulating glass with an embedded junction box, which solves the technical problem in the prior art that in order to conceal the junction box during glass installation, the junction box is placed into the curtain wall sealant joint, and when the curtain wall sealant joint is narrow, it will cause the glass to be unable to be installed, and even the junction box may be stuck off, resulting in electric leakage and further causing safety accidents.

[0004] This application provides a BIPV power generation insulating glass with an embedded junction box. The BIPV power generation insulating glass includes: a power generation glass layer; a fourth glass layer; a sealing structure is formed around the power generation glass layer and the fourth glass layer, and the power generation glass layer and the glass layer are encapsulated; a photovoltaic junction box, and the photovoltaic junction box is placed in the sealing structure around the power generation glass layer and the fourth glass layer.

[0005] In a possible implementation manner, the power generation glass layer includes: a first glass layer; a first encapsulation film layer; a second glass layer, and the first encapsulation adhesive layer encapsulates the first glass layer and the second glass layer together; a second encapsulation film layer; a third glass layer, and the second encapsulation film layer encapsulates the second glass layer and the third glass layer together; wherein, the sizes of the second glass layer and the third glass layer are smaller than the size of the first glass layer, the sizes of the second glass layer and the third glass layer are equal, and one end of the second glass layer and the third glass layer forms a flanging structure, and the distance between the edge of the first glass layer and the edge of the second glass layer or the third glass layer is 20 mm.

[0006] In a possible implementation, the power generation glass layer further includes: a bus bar, which is disposed at the connection between the second glass layer and the first encapsulation adhesive film layer, or the bus bar is disposed at the connection between the second glass layer and the second encapsulation adhesive film layer; the bus bar is electrically connected to the photovoltaic junction box.

[0007] In a possible implementation, the depth of the sealing structure in the vertical direction of the power generation insulating glass is greater than 7 mm, and the photovoltaic junction box and the bus bar are electrically connected through a copper foil, and the length of the copper foil is 1-15 mm.

[0008] In a possible implementation, the second glass layer is a power generation chip layer; the light transmittance of the second glass layer is 0 to 85%.

[0009] In a possible implementation, the power generation chip layer is one of cadmium telluride thin film power generation glass, copper indium gallium selenide thin film power generation glass, perovskite thin film power generation glass, or crystalline silicon solar cells.

[0010] In a possible implementation, both the first encapsulation adhesive film layer and the second encapsulation adhesive film layer are one of EVA film, PVB film, or ion-type intermediate film.

[0011] In a possible implementation, the first glass layer, the third glass layer, and the fourth glass layer are one of heat-treated glass, coated glass, or enameled glass.

[0012] In a possible implementation, it further includes a hollow layer, and the hollow layer forms a hollow structure between the power generation glass layer and the fourth glass layer; a hollow spacer, and the hollow spacer is disposed around the hollow layer.

[0013] In a possible implementation, the hollow spacer is filled with a desiccant.

[0014] A BIPV power generation insulating glass with an in-built junction box provided by the present application, the BIPV power generation insulating glass includes: a power generation glass layer; a fourth glass layer; a sealing structure is formed around the power generation glass layer and the fourth glass layer to encapsulate the power generation glass layer and the fourth glass layer, a photovoltaic junction box, and the photovoltaic junction box is placed in the sealing structure around the power generation glass layer and the fourth glass layer. By in-building the photovoltaic junction box in the sealing structure, when installing the insulating glass of the BIPV power generation curtain wall, the photovoltaic junction box will not be easily dislodged due to external factors outside the glass, resulting in electric leakage, thus avoiding the occurrence of safety accidents and further improving the installation efficiency of the insulating glass of the BIPV power generation curtain wall. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1The figure shows a side view of the BIPV power - generating insulating glass with an in - built junction box provided by an embodiment of the present application;

[0016] Figure 2 The figure shows a top view of the power - generating glass layer of the BIPV power - generating insulating glass with an in - built junction box provided by an embodiment of the present application.

[0017] Explanation of reference numerals:

[0018] 100, power - generating glass layer; 101, first glass layer; 102, first encapsulation adhesive film layer; 103, second glass layer; 104, second encapsulation adhesive film layer; 105, third glass layer; 106, bus bar; 107, flash structure;

[0019] 200, insulating layer;

[0020] 300, intermediate spacer; 301, desiccant;

[0021] 400, fourth glass layer;

[0022] 500, photovoltaic junction box. Detailed implementation manners

[0023] In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined. In the embodiments of the present application, all directional indications (such as up, down, left, right, front, back, top, bottom...) are only used to explain the relative positional relationship and movement conditions between components in a certain specific posture (as shown in the drawings). If this specific posture changes, then the directional indications will also change accordingly. In addition, the terms "comprise" and "have" and any variations thereof are intended to cover non - exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products or devices.

[0024] In addition, referring to "embodiment" in this article means that the specific features, structures or characteristics described in connection with the embodiment can be included in at least one embodiment of the present application. The phrase appears in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0025] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0026] Figure 1 Shown is a side view of a BIPV power generation insulating glass with a built-in junction box provided by an embodiment of the present application; Figure 2 FIG. 1 is a top view of a power generation glass layer of a BIPV power generation insulating glass built into a junction box provided in an embodiment of the present application. Figure 1 as well as Figure 2 As shown, the BIPV power generation insulating glass with built-in junction box includes: a power generation glass layer 100; a fourth glass layer 400; a sealing structure formed around the power generation glass layer 100 and the fourth glass layer 400, and the power generation glass layer 100 and the fourth glass layer 400 are encapsulated; a photovoltaic junction box 500, and the photovoltaic junction box 500 is placed in the sealing structure around the power generation glass layer 100 and the fourth glass layer 400. By embedding the photovoltaic junction box 500 in the sealing structure, when the insulating glass of the BIPV power generation curtain wall is installed, the photovoltaic junction box 500 will not be stuck due to external factors during installation or use, thereby causing leakage, thereby avoiding the occurrence of safety accidents and further improving the installation efficiency of the insulating glass of the BIPV power generation curtain wall.

[0027] It should be understood that the photovoltaic junction box 500 adopts a side-connected pen-type box, and can adopt an integrated positive and negative pole type or a separate positive and negative pole type, as long as the photovoltaic junction box 500 can be placed in a sealed structure.

[0028] In a possible implementation, the power generation glass layer 100 includes: a first glass layer 101; a first packaging film layer 102; a second glass layer 103, the first packaging film layer 102 packaging the first glass layer 101 and the second glass layer 103 together; a second packaging film layer 104; a third glass layer 105, the second packaging film layer 104 packaging the second glass layer 130 and the third glass layer 105 together; wherein the size of the second glass layer 103 and the third glass layer 105 is smaller than the size of the first glass layer 101, the size of the second glass layer 103 is equal to the size of the third glass layer 105, and a burr structure 107 is formed around the second glass layer 103 and the third glass layer 105, and the distance between the edge of the first glass layer 101 and the edge of the second glass layer 102 or the third glass layer 105 is 20 mm.

[0029] Specifically, the size of the perimeter of the first glass layer 101 is 20 mm larger than the perimeters of the second glass layer 103 and the third glass layer 105. A sealant is filled in the flash structure 107. The sealant can be silicone structural sealant or polysulfide sealant.

[0030] The power generation glass layer 100 can be specifically configured as follows: The first glass layer 101 and the second glass layer 103 are encapsulated together through the first encapsulation adhesive film layer 102, and the second glass layer 103 and the third glass layer 105 are encapsulated together through the second encapsulation adhesive film layer 104, forming a sandwich structure of the first glass layer 101, the first encapsulation adhesive film layer 102, the second glass layer 103, the second encapsulation adhesive film layer 104, and the third glass layer 105. The sizes of the second glass layer 103 and the third glass layer 105 are smaller than the size of the first glass layer 101. The sizes of the second glass layer 103 and the third glass layer 105 are equal. The edges on one side of the first glass layer 101, the second glass layer 103, and the third glass layer 105 are aligned. On the opposite side, the sizes of the second glass layer 103 and the third glass layer 105 are smaller than the size of the first glass layer 101, and a flash structure 107 is formed on the second glass layer 103 and the third glass layer 105 on the opposite side.

[0031] It should be understood that the first glass layer 101 can be an outdoor glass layer, the second glass layer 102 is a power generation chip layer, and the third glass layer 103 is an intermediate layer glass. A hollow structure is formed between the intermediate layer glass and the fourth glass layer 400.

[0032] In a possible implementation, the power generation glass layer 100 further includes: a bus bar 106. The bus bar 106 is disposed at the connection between the second glass layer 103 and the first encapsulation adhesive film layer 102, or the bus bar 106 is disposed at the connection between the second glass layer 103 and the second encapsulation adhesive film layer 104; the bus bar 106 is electrically connected to the photovoltaic junction box 500.

[0033] Specifically, the bus bar 106 can be disposed at the connection between the second glass layer 103 and the first encapsulation adhesive film layer 102, or can be disposed at the connection between the second glass layer 103 and the second encapsulation adhesive film layer 104; the bus bar 106 extends from the first encapsulation adhesive film layer 102 or the second encapsulation adhesive film layer 104, and the outgoing line of the bus bar 106 is at the flash position. Due to different types of photovoltaic chips having different light-receiving surfaces, for example, for cadmium telluride power generation chips, their light-receiving surfaces are on the glass surface rather than the film surface. Therefore, the bus bar 106 is disposed close to the second encapsulation adhesive film layer 104. Another example is copper indium gallium selenide power generation chips, whose light-receiving surfaces are on the film surface rather than the glass surface. So the bus bar 106 will be disposed close to the first encapsulation adhesive film layer 102. The orientation of the film surface of the photovoltaic chip can be flexibly set according to different types of photovoltaic power generation chips to absorb more light.

[0034] In a possible implementation, the distance of the sealing structure in the vertical direction of the power generation insulating glass is greater than 7 mm. The photovoltaic junction box 500 is electrically connected to the bus bar 106 through a copper foil, and the length of the copper foil is 1 - 15 mm.

[0035] Specifically, a bus bar and positive and negative connectors are arranged at the edge of the flash structure 107 to lead out the outgoing wire of the bus bar 106. The positive and negative poles of the bus bar 106 are respectively welded to the positive and negative terminal posts in the photovoltaic junction box 500. The photovoltaic junction box 500 is placed at the outgoing wire position of the bus bar 106, and the photovoltaic junction box 500 can also be placed at a position far from the bus bar 106. When the bus bar 106 is arranged at the outgoing wire position of the bus bar 106 and the bus bar is from a position close to the second encapsulation film layer 104, the length of the copper foil is 1 - 10 mm. For the convenience of gluing and aesthetics and to improve operation and quality, the length of the copper foil of the bus bar can be set to 3 - 8 mm. When the bus bar 106 is arranged at a position close to the first encapsulation film layer 102, the length of the copper foil is 5 - 15 mm. Similarly, the length of the copper foil is 7 - 12 mm.

[0036] It should be understood that in this embodiment, the length of the copper foil can be specifically selected according to the position of the bus bar 106 and the position of the photovoltaic junction box 500.

[0037] In a possible implementation, the second glass layer 103 is a power generation chip layer; the light transmittance of the second glass layer 103 is 0 - 85%.

[0038] In a possible implementation, the power generation chip layer is one of cadmium telluride (CdTe) power generation thin film glass, copper indium gallium selenide (CIGS) power generation thin film glass, perovskite (PSC) power generation thin film glass, or crystalline silicon solar cells.

[0039] In a possible implementation, both the first encapsulation film layer 102 and the second encapsulation film layer 104 are one of EVA films, PVB films, or ionic intermediate films.

[0040] In a possible implementation, the first glass layer 100, the third glass layer 500, and the fourth glass layer 700 are one of heat-treated glass, coated glass, or enameled glass.

[0041] In a possible implementation, it further includes a hollow layer 200. The hollow layer 200 forms a hollow structure between the power generation glass layer 100 and the fourth glass layer 400. A hollow spacer 300 is arranged around the hollow layer 200. The hollow spacer 300 plays a role in supporting the power generation glass layer 100 and the fourth glass layer 400. Both ends of the hollow spacer 300 are bonded and sealed to the power generation glass layer 100 and the fourth glass layer 400 with butyl rubber.

[0042] In a possible implementation, the middle spacer 300 is filled with a desiccant, which plays a role in moisture absorption to prevent the glass from dew condensation.

[0043] The processing flow of the present utility model is as follows:

[0044] First, the first glass layer 101, the second glass layer 103, and the third glass layer 105 are assembled. The size of the first glass layer 100 is 20 mm larger than the sizes of the peripheries of the middle glass layer 300 and the power generation chip layer 200. After using PVB or other film adhesive materials to form a sandwich configuration of the first glass layer 101, the second glass layer 103, and the third glass layer 105, an unequal-sized flange structure 107 is formed. The bus bar 106 is led out from the position of the first encapsulation film layer 102 or the second encapsulation film layer 104. The bus bar 106 is electrically connected to the photovoltaic junction box 500 through a copper foil. A bus bar and positive and negative connectors are arranged at the flange position. The bus bar, the positive and negative connectors are respectively led out to the outside of the glass layer through the flange position. The photovoltaic junction box 500 is placed at the bus bar outlet position. The positive and negative poles of the bus bar 106 are respectively welded to the positive and negative poles of the photovoltaic junction box 500. After welding, the internal space of the photovoltaic junction box 500 is filled with potting glue to wrap all the electrical components inside the photovoltaic junction box 500, playing a role in safety. Then, structural glue is set to seal the photovoltaic junction box 500 and the positive and negative cables led out from the photovoltaic junction box 500 in the structural glue, and the positive and negative terminals of the cable are led out from two sides of the glass.

[0045] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A BIPV power generation insulating glass with a built-in junction box, characterized in that: include: Power generation glass layer (100); A fourth glass layer (400); the power generation glass layer (100) and the fourth glass layer (400) form a sealing structure around each other, and the power generation glass layer (100) and the fourth glass layer (400) are encapsulated; A photovoltaic junction box (500) is placed in a sealed structure around the power generation glass layer (100) and the fourth glass layer (400).

2. The BIPV power generation insulating glass with built-in junction box according to claim 1, characterized in that: The power generation glass layer (100) comprises: A first glass layer (101); A first packaging film layer (102); a second glass layer (103), wherein the first encapsulation film layer (102) encapsulates the first glass layer (101) and the second glass layer (103); A second packaging film layer (104); a third glass layer (105), wherein the second encapsulation film layer (104) encapsulates the second glass layer (103) and the third glass layer (105); The size of the second glass layer (103) and the third glass layer (105) is smaller than the size of the first glass layer (101), the size of the second glass layer (103) is equal to the size of the third glass layer (105), and a flash structure (107) is formed around the second glass layer (103) and the third glass layer (105), and the distance between the edge of the first glass layer (101) and the edge of the second glass layer (103) or the third glass layer (105) is 20 mm.

3. The BIPV power generation insulating glass with built-in junction box according to claim 2 is characterized in that: The power generation glass layer (100) further comprises: A bus bar (106), wherein the bus bar (106) is arranged at the connection between the second glass layer (103) and the first packaging film layer (102), or the bus bar (106) is arranged at the connection between the second glass layer (103) and the second packaging film layer (104); the bus bar (106) is electrically connected to the photovoltaic junction box (500).

4. The BIPV power generation insulating glass with built-in junction box according to claim 3 is characterized in that: The distance of the sealing structure in the vertical direction of the power generation insulating glass is greater than 7 mm, and the photovoltaic junction box (500) and the bus bar (106) are electrically connected via a copper foil, and the length of the copper foil is 1-15 mm.

5. The BIPV power generation insulating glass with built-in junction box according to claim 3 is characterized in that: The second glass layer (103) is a power generation chip layer; the light transmittance of the second glass layer (103) is 0 to 85%.

6. The BIPV power generation insulating glass with built-in junction box according to claim 5, characterized in that: The power generation chip layer is one of cadmium telluride power generation thin film glass, copper indium gallium selenide power generation thin film glass, perovskite power generation thin film glass or crystalline silicon solar cell.

7. The BIPV power generation insulating glass with built-in junction box according to claim 2, characterized in that: The first encapsulation film layer (102) and the second encapsulation film layer (104) are both one of EVA film, PVB film or ionic intermediate film.

8. The BIPV power generation insulating glass with built-in junction box according to claim 2, characterized in that: The first glass layer (101), the third glass layer (105) and the fourth glass layer (400) are one of heat-treated glass, coated glass and colored glaze glass.

9. The BIPV power generation insulating glass with built-in junction box according to claim 1, characterized in that: It also includes a hollow layer (200), wherein the hollow layer (200) forms a hollow structure with the power generation glass layer (100) and the fourth glass layer (400); A hollow spacer (300), wherein the hollow spacer (300) is arranged around the hollow layer (200).

10. The BIPV power generation insulating glass with built-in junction box according to claim 9, characterized in that: The hollow spacer bar (300) is filled with a desiccant.

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