Semiconductor laser
By using two sets of laser array modules and polarization components in semiconductor lasers, the power ratio of the feedback beam is adjusted, and the problems of large number of gratings and complex structure in the prior art are solved, and the wavelength locking and output power improvement of the laser are achieved.
Patent Information
- Application Number
- CN202421983491.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-15
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-08-15
AI Technical Summary
When existing semiconductor lasers achieve wavelength locking, the number of gratings is large and the structure is complex, and the feedback optical power ratio cannot be adjusted, resulting in low success rate, large loss and high cost.
Two sets of laser array modules, two sets of small mirror arrays, mirrors, two half-wave plates, polarization elements and diffraction optical devices are used to adjust the power ratio of the feedback beam through the coordination of the polarization element and the half-wave plate to achieve laser wavelength locking.
Reduces the number of gratings, simplifies the structure, improves output power, reduces losses and costs, and achieves flexible locking of the laser wavelength range.
Smart Images
Figure CN223039388U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of lasers, and particularly to a semiconductor laser. Background Art
[0002] The single-tube semiconductor laser is the most practical and important type of laser. It is small in size, long in life, and can be pumped by a simple injection current method. Its operating voltage and current are compatible with integrated circuits, so it can be monolithically integrated with them. Moreover, it can be directly current-modulated at a frequency up to GHz to obtain a high-speed modulated laser output.
[0003] In related technologies, a blue semiconductor laser with a locked output wavelength range can match the absorption spectrum of a doped crystal and can be used to pump a visible light solid laser. The currently commonly used laser wavelength locking method is: each single tube is correspondingly provided with its own transmission grating, and at the same time, each grating locks the wavelength of a single tube of the blue semiconductor laser through the feedback effect of the reflected light beam. However, for the lasers in the existing solutions, the number of gratings is large, the structure is complex, and the power ratio of the feedback light cannot be adjusted, resulting in problems such as low power, large loss, and high cost. Summary of the Utility Model
[0004] In view of the above problems, this application is proposed to provide a semiconductor laser, so as to achieve the technical effects of reducing the number of gratings, flexibly adjusting the power ratio of the feedback light, increasing the output power, reducing the loss and cost while realizing the wavelength locking of the single tube of the semiconductor laser.
[0005] To achieve the above object, the embodiments of this application adopt the following technical solutions:
[0006] A semiconductor laser is provided, including: a first laser array module, a second laser array module, a first small mirror array, a second small mirror array, a mirror, a first half-wave plate, a second half-wave plate, a polarization element, and a diffractive optical device,
[0007] The light beam emitted by the first laser array module is combined to the mirror through the first small mirror array, and after changing the polarization state through the first half-wave plate, it is merged into the polarization element, and the polarization element partially transmits to generate a first output light beam and partially reflects to generate a first feedback light beam,
[0008] wherein after the first feedback light beam is reflected to the diffractive optical device, it is fed back to the first laser array module along the original path;
[0009] The light beam emitted by the second laser array module is combined by the second small mirror array to the second half-wave plate, and after changing the polarization state through the second half-wave plate, it is converged into the polarization element. The polarization element partially reflects to generate a second output beam and partially transmits to generate a second feedback beam.
[0010] After the second feedback beam is transmitted to the diffractive optical device, it is fed back along the original path to the second laser array module.
[0011] Optionally, the first laser array module and the second laser array module are oppositely arranged and staggeredly arranged.
[0012] Optionally, the first laser array module includes first semiconductor laser single tubes. A plurality of the first semiconductor laser single tubes are arranged along the X-axis direction and emit light beams along the Y-axis direction.
[0013] The first small mirror array includes first small mirrors corresponding to the first semiconductor laser single tubes one by one. A plurality of the first small mirrors are arranged along the X-axis direction and are inclined.
[0014] The second laser array module includes second semiconductor laser single tubes. A plurality of the second semiconductor laser single tubes are arranged along the X-axis direction and emit light beams in the opposite direction of the Y-axis direction.
[0015] The second small mirror array includes second small mirrors corresponding to the second semiconductor laser single tubes one by one. A plurality of the second small mirrors are arranged along the X-axis direction and are inclined.
[0016] Optionally, the mirror and the polarization element are installed on the same side of the semiconductor laser, and the mirror is arranged close to the first small mirror array, and the polarization element is arranged close to the second small mirror array.
[0017] The first half-wave plate, the second half-wave plate and the diffractive optical device are respectively located on different sides of the polarization element. The first half-wave plate is arranged between the mirror and the polarization element, the second half-wave plate is arranged between the second small mirror array and the polarization element, and the diffractive optical device is arranged on the side of the polarization element away from the second half-wave plate.
[0018] Optionally, a plurality of the first semiconductor laser single tubes and a plurality of the first small mirrors are arranged in a stepped manner in the Z-axis direction.
[0019] A plurality of the second semiconductor laser single tubes and a plurality of the second small mirrors are arranged in a stepped manner in the Z-axis direction.
[0020] Optionally, by adjusting the angle θ between the optical axis of the first half-wave plate and the horizontal direction, the optical powers of the first output light beam and the first feedback light beam passing through the polarization element are respectively determined; and
[0021] By adjusting the angle θ between the optical axis of the second half-wave plate and the horizontal direction, the optical powers of the second output light beam and the second feedback light beam passing through the polarization element are respectively determined.
[0022] Optionally, the transmission power ratio of the polarization element is cos 2 2θ, and the reflection power ratio of the polarization element is sin 2 2θ.
[0023] Optionally, the first laser array module further includes a first collimating lens, and a plurality of the first collimating lenses are arranged along the X-axis direction, and the plurality of the first collimating lenses correspond to the first semiconductor laser single tubes one by one;
[0024] The second laser array module further includes a second collimating lens, and a plurality of the second collimating lenses are arranged along the X-axis direction, and the plurality of the second collimating lenses correspond to the second semiconductor laser single tubes one by one.
[0025] Optionally, the polarization element includes a polarization cube or a polarizing sheet.
[0026] Optionally, the diffractive optical device includes a reflection grating, or a combined device including a transmission grating and a mirror.
[0027] As can be seen from the above, at least one of the technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects: by setting two sets of laser array modules, two sets of small mirror arrays, a mirror, two half-wave plates, a polarization element, and a diffractive optical device, the two laser light beams can respectively change the polarization state through the two half-wave plates and then converge into the polarization element. After the first light beam passes through the polarization element, part of it is transmitted to generate an output light beam, and part of it is reflected to generate a feedback light beam. After the second light beam passes through the polarization element, part of it is reflected to generate an output light beam, and part of it is transmitted to generate a feedback light beam, and the two feedback light beams respectively return along the original path under the action of the diffractive optical device to realize the wavelength locking of the semiconductor laser single tube, which not only reduces the number of gratings, but also can flexibly adjust the power ratio of the feedback light beam by adjusting the optical axis angle of the half-wave plate, and further can lock the laser wavelength within a preset range, thereby achieving the technical effects of wavelength range locking, increasing the output power, reducing the power loss, and saving the manufacturing cost.
[0028] The above description is only an overview of the technical solution of the present application. In order to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present application more obvious and understandable, the specific embodiments of the present application are specifically given below. Description of the Drawings
[0029] By reading the detailed description of the preferred embodiments below, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present application. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:
[0030] Figure 1 is one of the schematic structural diagrams of the semiconductor laser in an embodiment of the present application;
[0031] Figure 2 is the second of the schematic structural diagrams of the semiconductor laser in an embodiment of the present application;
[0032] Figure 3 is a relationship curve diagram between the angle between the optical axis of the half-wave plate and the horizontal direction and the transmission power ratio / reflection power ratio in an embodiment of the present application;
[0033] In the figure: 1. First laser array module; 2. Second laser array module; 3. First small mirror array; 4. Second small mirror array; 5. Mirror; 6. First half-wave plate; 7. Second half-wave plate; 8. Polarizing element; 9. Diffractive optical device;
[0034] 11. First semiconductor laser single tube; 12. First collimating lens; 21. Second semiconductor laser single tube; 22. Second collimating lens; 31. First small mirror; 41. Second small mirror; Detailed Embodiments
[0035] Hereinafter, the exemplary embodiments of the present application will be described in more detail with reference to the drawings. Although the exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present application can be more thoroughly understood and the scope of the present application can be completely conveyed to those skilled in the art.
[0036] The technical concept of this application lies in improving the structure in which each single laser tube in the existing solution is provided with a corresponding grating. By only setting one grating, it is possible to make two feedback beams return to the corresponding single laser tubes along the original path, and then use the feedback beams to achieve wavelength locking of the laser; at the same time, by setting a polarization element and two half-wave plates, the angle of the optical axis of the half-wave plate is flexibly adjusted to adjust the optical power of the feedback beam, thereby controlling the power ratio of the feedback beam and locking the laser wavelength within a preset range.
[0037] The following will, with reference to the accompanying drawings, elaborate in detail on the technical solutions provided by each embodiment of this application.
[0038] Figure 1 It is a schematic top view (X-Y plane) structure diagram of a semiconductor laser. Refer to Figure 1 As shown, in the embodiment of this application, a semiconductor laser is proposed, including: a first laser array module 1, a second laser array module 2, a first small mirror array 3, a second small mirror array 4, a mirror 5, a first half-wave plate 6, a second half-wave plate 7, a polarization element 8, and a diffractive optical device 9. At the same time, the diffractive optical device 9 in this embodiment preferably uses a reflection grating.
[0039] The beam emitted by the first laser array module 1 is combined by the first small mirror array 3 to the mirror 5, and after changing the polarization state through the first half-wave plate 6, it is merged into the polarization element 8. The polarization element 8 partially transmits to generate a first output beam and partially reflects to generate a first feedback beam. After the first feedback beam is reflected to the diffractive optical device 9, it is fed back to the first laser array module 1 along the original path;
[0040] The beam emitted by the second laser array module 2 is combined by the second small mirror array 4 to the second half-wave plate 7, and after changing the polarization state through the second half-wave plate 7, it is merged into the polarization element 8. The polarization element 8 partially reflects to generate a second output beam and partially transmits to generate a second feedback beam. After the second feedback beam is transmitted to the diffractive optical device 9, it is fed back to the second laser array module 2 along the original path.
[0041] That is to say, in this embodiment, two beams emitted by different laser array modules can respectively pass through the corresponding half-wave plates, and after changing the polarization state through the half-wave plates, they are respectively merged into the polarization element; one of the beams can be reflected by the polarization element to generate a feedback beam, and the other beam can be transmitted by the polarization element to generate a feedback beam. The two feedback beams are respectively fed back to their respective laser array modules along the original path under the reflection of the diffractive optical device; at the same time, one of the above-mentioned beams can be transmitted by the polarization element to generate an output beam, and the other beam can be reflected by the polarization element to generate an output beam. These two output beams can be emitted by the polarization element and merged and output along the Y-axis direction.
[0042] As Figure 1 shown, the first feedback beam can pass through the diffractive optical element 9, polarization element 8, first half-wave plate 6, mirror 5, first small mirror array 3, and first collimating lens array in sequence, and then be fed back to the first semiconductor laser single tube 11 in the first laser array module 1; the second feedback beam can pass through the diffractive optical element 9, polarization element 8, second half-wave plate 7, second small mirror array 4, and second collimating lens array in sequence, and then be fed back to the second semiconductor laser single tube 21 in the second laser array module 2. Thus, by feeding back the first feedback beam and the second feedback beam into their respective laser single tubes, the output frequency of the single tube can be affected, and its output wavelength can be locked within a certain range.
[0043] It can be seen from this that by using the semiconductor laser in this embodiment, only one grating is set to enable the two feedback beams to return to their respective laser array modules along the original path, and the wavelength locking of the semiconductor laser is achieved; at the same time, by setting the polarization element and two half-wave plates, the angle of the optical axis of the half-wave plate can be flexibly adjusted to adjust the optical power of the feedback beam, and by controlling the power ratio of the feedback beam, the laser wavelength is locked within the preset range, thereby achieving the technical effects of locking the wavelength range, reducing the number of gratings, increasing the output power, reducing the power loss, and saving the manufacturing cost.
[0044] In some embodiments, as Figure 1 shown, the first laser array module 1 and the second laser array module 2 are arranged opposite to each other and staggered, and at the same time, the arrangement positions of the first collimating lens array, the first small mirror array 3 and the first laser array module 1 should correspond, and the arrangement positions of the second collimating lens array, the second small mirror array 4 and the second laser array module 2 should correspond, so that the light beams emitted by the two groups of laser array modules do not interfere with each other, ensuring the normal transmission of the two light beams.
[0045] In some embodiments, continuing to refer to Figure 1 shown, the first laser array module 1 includes the first semiconductor laser single tube 11, and a plurality of first semiconductor laser single tubes 11 are arranged along the X-axis direction and emit light beams along the Y-axis direction; the first small mirror array 3 includes the first small mirrors 31 corresponding to the first semiconductor laser single tubes 11 one by one, and a plurality of first small mirrors 31 are arranged along the X-axis direction and inclined; the second laser array module 2 includes the second semiconductor laser single tube 21, and a plurality of second semiconductor laser single tubes 21 are arranged along the X-axis direction and emit light beams in the opposite direction of the Y-axis; the second small mirror array 4 includes the second small mirrors 41 corresponding to the second semiconductor laser single tubes 21 one by one, and a plurality of second small mirrors 41 are arranged along the X-axis direction and inclined.
[0046] It can be understood that in the embodiments of the present application, with reference to Figure 1 and Figure 2 as shown, the arrangement direction of the first laser array module can be defined as the X-axis direction, the laser emission direction of the first laser array module as the Y-axis direction, and the height direction of the first laser array module as the Z-axis direction; for the sake of simplicity, Figure 1 only the first semiconductor laser single tube 11, the second semiconductor laser single tube 21, the first collimating lens 12, the second collimating lens 22, the first small mirror 31 and the second small mirror 41 located on the rightmost side are marked in
[0047] In some embodiments, the first laser array module 1 further includes a first collimating lens 12, and a plurality of first collimating lenses 12 are arranged along the X-axis direction, and the plurality of first collimating lenses 12 correspond to the first semiconductor laser single tubes 11 one by one; the second laser array module 2 further includes a second collimating lens 22, and a plurality of second collimating lenses 22 are arranged along the X-axis direction, and the plurality of second collimating lenses 22 correspond to the second semiconductor laser single tubes 21 one by one. The first collimating lens array and the second collimating lens array are arranged opposite to each other, and the first collimating lens 12 and the second collimating lens 22 are arranged in a staggered manner to effectively avoid the light beam being interfered or blocked.
[0048] Specifically, in the embodiments of the present application, both the first semiconductor laser single tube 11 and the second semiconductor laser single tube 21 can adopt blue light semiconductor laser single tubes, and the output power of the semiconductor laser can be increased by increasing the number of the first semiconductor laser single tubes 11 and the second semiconductor laser single tubes 21; wherein, the first semiconductor laser single tubes 11 and the second semiconductor laser single tubes 21 are arranged in a staggered manner, emitting light beams along the Y-axis direction and with opposite light output directions; the inclination directions of the first small mirror 31 and the second small mirror 41 are opposite. The light beams emitted by the plurality of first semiconductor laser single tubes 11 along the Y-axis direction can be collimated by the corresponding first collimating lenses 12, reflected by the first small mirror 31, and combined into a single light beam along the X-axis direction to the mirror 5, and then sequentially merged into the first half-wave plate 6 and the polarization element 8; the light beams emitted by the plurality of second semiconductor laser single tubes 12 along the opposite direction of the Y-axis can be collimated by the corresponding second collimating lenses 22, reflected by the second small mirror 41, and combined into another light beam along the X-axis direction to the second half-wave plate 7, and then merged into the polarization element 8, thereby realizing the combination, feedback and output of the two light beams, making the semiconductor laser use fewer optical devices, with a simpler and more compact structure, and can also further increase the output power of the semiconductor laser by increasing the number of laser single tubes and their power and performing spectral combination on more laser single tubes.
[0049] In some embodiments, the mirror 5 and the polarization element 8 are mounted on the same side of the semiconductor laser, and the mirror 5 is disposed close to the first small mirror array 3, and the polarization element 8 is disposed close to the second small mirror array 4. The first half-wave plate 6, the second half-wave plate 7, and the diffractive optical device 9 are respectively located on different sides of the polarization element 8, wherein the first half-wave plate 6 is disposed between the mirror 5 and the polarization element 8, the second half-wave plate 7 is disposed between the second small mirror array 4 and the polarization element 8, and the diffractive optical device 9 is disposed on the side of the polarization element 8 away from the second half-wave plate 7. As Figure 1 shown, the mirror 5, the first half-wave plate 6, the second half-wave plate 7, the polarization element 8, and the diffractive optical device 9 are all mounted on the same side of the semiconductor laser, that is, on the same side of the laser array module and the small mirror array ( Figure 1 the left side in ). For example, the mirror 5 is close to the leftmost first small mirror 31, and the second half-wave plate 7 is close to the leftmost second small mirror 41. Thus, the feedback effect of the feedback beam can be realized by one diffractive optical device, simplifying the structure of the laser and saving the manufacturing cost.
[0050] Figure 2 is a schematic structural diagram of the semiconductor laser in the X-Z plane. Referring to Figure 2 shown, in an embodiment of the present application, a plurality of first semiconductor laser single tubes 11 and a plurality of first small mirrors 31 are arranged in a stepped manner in the Z-axis direction; a plurality of second semiconductor laser single tubes 21 and a plurality of second small mirrors 41 are arranged in a stepped manner in the Z-axis direction. Similarly, the first collimating lens 12 and the second collimating lens 22 should also be arranged in a stepped manner in the Z-axis direction. Such a design can enable the light beams emitted by each laser single tube to be reflected by the corresponding small mirror, effectively preventing the light beams emitted by the first laser array module 1 and the second laser array module 2 from being interfered or blocked.
[0051] Figure 3 is a relationship curve graph between the angle between the optical axis of the half-wave plate and the horizontal direction and the transmission power ratio / reflection power ratio, where the horizontal axis represents the angle θ and the vertical axis represents the optical power. The solid line represents the transmitted optical power and the dashed line represents the reflected optical power.
[0052] Referring to Figure 3As shown, in some preferred embodiments, by adjusting the angle θ between the optical axis of the first half-wave plate 6 and the horizontal direction, the optical power of the first output beam and the optical power of the first feedback beam passing through the polarization element 8 are respectively determined; and by adjusting the angle θ between the optical axis of the second half-wave plate 7 and the horizontal direction, the optical power of the second output beam and the optical power of the second feedback beam passing through the polarization element 8 are respectively determined. Wherein, the angle between the optical axis of the half-wave plate and the horizontal direction is the adjustment angle when rotating the half-wave plate. Thus, by rotating the angles of the first half-wave plate 6 and the second half-wave plate 7, the polarization state of the beam passing through the half-wave plate can be changed, and further the power ratio of the feedback beam and the output beam can be changed by using the polarization element 8.
[0053] Further, the transmission power ratio of the polarization element is cos 2 2θ, and the reflection power ratio of the polarization element is sin 2 2θ. That is, in the embodiments of the present application, the power intensities of the transmitted beam and the feedback beam passing through the polarization element can be changed through the cooperation of the half-wave plate and the polarization element. Thus, the power ratios of the first feedback beam and the first output beam, and the second feedback beam and the second output beam after passing through the polarization element can be freely adjusted according to requirements, and the laser wavelength can be locked within a preset range.
[0054] For example, in an embodiment of the present application, both the first laser array module 1 and the second laser array module 2 include twelve blue semiconductor laser single tubes and twelve corresponding collimating lenses provided. Both the first small mirror array 3 and the second small mirror array 4 include twelve small mirrors. The first small mirror array 3 performs spatial beam combining on the beams emitted by the blue semiconductor laser single tubes of the first laser array module 1 and outputs a single beam; the second small mirror array 4 performs spatial beam combining on the beams emitted by the blue semiconductor laser single tubes of the second laser array module 2 and outputs another single beam. In this embodiment, the angle between the optical axis of the first half-wave plate 6 and the horizontal direction can be adjusted to 9.22°, and a single beam of the first laser array module 1 is made to pass through the first half-wave plate 6 and the polarization cube. At this time, this single beam is transmitted with 90% optical power to generate the first output beam and reflected with 10% optical power to generate the first feedback beam to reach the reflection grating. At the same time, the angle between the optical axis of the second half-wave plate 7 and the horizontal direction can be adjusted to 35.78°, and another single beam of the second laser array module 2 is made to pass through the second half-wave plate 7 and the polarization cube, and then is reflected with 90% optical power to generate the second output beam and transmitted with 10% optical power to generate the second feedback beam to reach the reflection grating.
[0055] For another example, in another embodiment of the present application, the angle between the optical axis of the first half-wave plate 6 and the horizontal direction is adjusted to 6.46°, and after the beam of the first laser array module 1 passes through the polarization cube, a first output beam is transmitted with 95% optical power, and a first feedback beam is reflected with 5% optical power and reaches the reflection grating. At the same time, the angle between the optical axis of the second half-wave plate 7 and the horizontal direction is adjusted to 38.54°, and after the beam of the second laser array module 2 passes through the polarization cube, a second output beam is reflected with 95% optical power, and a second feedback beam is transmitted with 5% optical power and reaches the reflection grating. Thus, only one grating can be used to perform wavelength locking on two groups of single-tube arrays of blue semiconductor lasers, significantly reducing the number of gratings used, and the power ratio of the feedback beam can also be adjusted by changing the angle between the optical axis of the half-wave plate and the horizontal direction to meet the power and wavelength requirements.
[0056] In some embodiments, the polarization element 8 includes a polarization cube or a polarizer, preferably a polarization cube. Thus, the first half-wave plate 6, the second half-wave plate 7, and the diffractive optical device 9 can be arranged on different sides of the polarization cube, which is beneficial to changing the polarization states of the two beams of light and realizing the feedback effect of the light beams.
[0057] In some embodiments, the diffractive optical device 9 is preferably a reflection grating; or a combined device of a transmission grating and a mirror is selected, that is, the reflection grating is replaced by a combined device of a transmission grating and a mirror to achieve the same technical effect.
[0058] Of course, the present application does not limit the types, quantities, installation positions, and connection relationships of the various components in the semiconductor laser.
[0059] In some embodiments, the semiconductor laser in the present application can be used as a pump source for a solid-state laser; for example, the wavelength-locked blue semiconductor laser in the present application is used to pump a visible-light solid-state laser, which can not only reduce the overall weight of the laser and save the manufacturing cost, but also adjust the power ratio of the feedback beam, lock the laser within a preset wavelength range, and at the same time can also provide a laser source with a larger output power, improving the reliability and stability of the operation of the solid-state laser.
[0060] In summary, this embodiment proposes a semiconductor laser. By setting two groups of laser array modules, two groups of small mirror arrays, a mirror, two half-wave plates, a polarization element, and a diffractive optical device, two laser beams can respectively change their polarization states through the two half-wave plates and then converge into the polarization element. Among them, after the first beam passes through the polarization element, part of it is transmitted to generate an output beam, and part of it is reflected to generate a feedback beam. At the same time, after the second beam passes through the polarization element, part of it is reflected to generate an output beam, and part of it is transmitted to generate a feedback beam. And the two feedback beams are respectively reflected by the diffractive optical device and return along the original path to achieve wavelength locking of a single semiconductor laser tube. This not only reduces the number of gratings, but also can flexibly adjust the power ratio of the feedback beam by adjusting the optical axis angle of the half-wave plate. Furthermore, the wavelength of the laser can be locked within a preset range, thereby achieving the technical effects of improving the output power, reducing the power loss, and saving the manufacturing cost.
[0061] It should be noted that the above embodiments are illustrative of the present application rather than restrictive, and those skilled in the art can design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in the claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present application can be implemented by means of hardware including several different elements and by means of a suitably programmed computer. In a unit claim listing several devices, several of these devices can be embodied by the same hardware item. The use of the words first, second, and third, etc. does not denote any order. These words can be interpreted as names.
[0062] The above is only the specific implementation manner of the present invention. Under the above teaching of the present invention, those skilled in the art can make other improvements or deformations based on the above embodiments. Those skilled in the art should understand that the above specific description is only to better explain the purpose of the present invention, and the protection scope of the present invention should be subject to the protection scope of the claims.
Claims
1. A semiconductor laser, characterized in that: include: a first laser array module, a second laser array module, a first small reflector array, a second small reflector array, a reflector, a first half-wave plate, a second half-wave plate, a polarization element, and a diffractive optical device, The light beam emitted by the first laser array module is combined to the reflector by the first small reflector array, and then is merged into the polarization element after the polarization state is changed by the first half-wave plate, and is partially transmitted by the polarization element to generate a first output light beam and partially reflected by the polarization element to generate a first feedback light beam. wherein the first feedback light beam is reflected to the diffractive optical device and then fed back to the first laser array module along the original path; The light beam emitted by the second laser array module is combined to the second half-wave plate through the second small reflector array, and then merged into the polarization element after the polarization state is changed by the second half-wave plate, and is partially reflected by the polarization element to generate a second output light beam and partially transmitted to generate a second feedback light beam. After the second feedback light beam is transmitted to the diffractive optical device, it is fed back to the second laser array module along the original path.
2. The semiconductor laser according to claim 1, characterized in that The first laser array module and the second laser array module are arranged opposite to each other and staggered.
3. The semiconductor laser according to claim 2, characterized in that The first laser array module includes a first semiconductor laser single tube, a plurality of the first semiconductor laser single tubes are arranged along the X-axis direction, and emit light beams along the Y-axis direction; The first small reflector array includes first small reflectors corresponding to the first semiconductor laser tubes one by one, and a plurality of the first small reflectors are arranged along the X-axis direction and are tilted; The second laser array module includes a second semiconductor laser tube, a plurality of the second semiconductor laser tubes are arranged along the X-axis direction, and emit light beams in the opposite direction of the Y-axis direction; The second small reflector array includes second small reflectors corresponding to the second semiconductor laser tubes one by one, and a plurality of the second small reflectors are arranged along the X-axis direction and are tilted.
4. The semiconductor laser according to claim 3, characterized in that The reflector and the polarization element are mounted on the same side of the semiconductor laser, and the reflector is arranged close to the first small reflector array, and the polarization element is arranged close to the second small reflector array. The first half-wave plate, the second half-wave plate and the diffractive optical device are respectively located on different sides of the polarization element, wherein the first half-wave plate is arranged between the reflector and the polarization element, the second half-wave plate is arranged between the second small reflector array and the polarization element, and the diffractive optical device is arranged on a side of the polarization element away from the second half-wave plate.
5. The semiconductor laser according to claim 3, characterized in that The plurality of first semiconductor laser single tubes and the plurality of first small reflecting mirrors are arranged in a step-like manner in the Z-axis direction; The plurality of second semiconductor laser single tubes and the plurality of second small reflecting mirrors are arranged in a stepped manner in the Z-axis direction.
6. The semiconductor laser according to claim 1, characterized in that By adjusting the angle θ between the optical axis of the first half-wave plate and the horizontal direction, respectively determining the optical power of the first output light beam and the first feedback light beam passing through the polarization element; as well as By adjusting the angle θ between the optical axis of the second half-wave plate and the horizontal direction, the optical powers of the second output light beam and the second feedback light beam passing through the polarization element are respectively determined.
7. The semiconductor laser according to claim 6, characterized in that The transmission power ratio of the polarization element is cos 2 2θ, the reflected power ratio of the polarization element is sin 2 2θ.
8. The semiconductor laser according to claim 3, characterized in that The first laser array module further includes a first collimating lens, a plurality of the first collimating lenses are arranged along the X-axis direction, and the plurality of the first collimating lenses correspond one-to-one to the first semiconductor laser tubes; The second laser array module further includes a second collimating lens. A plurality of the second collimating lenses are arranged along the X-axis direction, and the plurality of the second collimating lenses correspond one-to-one to the second semiconductor laser tubes.
9. The semiconductor laser according to claim 1, characterized in that The polarizing element comprises a polarizing cube or a polarizing plate.
10. The semiconductor laser according to claim 1, characterized in that The diffractive optical device includes a reflection grating, or a combination of a transmission grating and a reflection mirror.