Radio frequency module, link framework and electronic product
By adopting 3D stacked packaging and a new link architecture in the RF module, the functional chip is buried and the low-noise amplifier chip is added, which solves the problems of improved integration and performance of RF modules, and reduces noise figure and improves reception sensitivity.
Patent Information
- Application Number
- CN202421545395.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-02
- Publication Date
- 2025-06-27
- Estimated Expiration
- 2034-07-02
AI Technical Summary
How to improve the integration and performance while keeping the size of the RF module unchanged.
Through the 3D stacked packaging design and new link architecture, the functional chip is buried in the module, the low-noise amplifier chip is added, the switch chip is buried, and the filter chip is mounted on the surface.
The performance improvement of RF modules at the same size is achieved, reducing noise figure, improving reception sensitivity, and simplifying circuit design.
Smart Images
Figure CN223040018U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of wireless communication, and particularly to a radio frequency module with high integration and high performance, a link structure applied to the radio frequency module, and an electronic product having the radio frequency module. Background Art
[0002] With the upgrade of communication technology, the application of mobile communication networks is becoming more and more extensive, and the demand for radio frequency front-end chips is also increasing. The complexity of the radio frequency front end increases with the increase in the number of supported frequency bands, and is usually related to the number of antennas and the supported data traffic. Multi-mode and multi-band network systems, more spectrum support, higher radio frequency bands, more CA carrier aggregations, higher-order modulation, higher-order MIMO, and increasingly crowded spectrum resources pose greater challenges to the architecture, design, and manufacturing of the terminal radio frequency front end. However, the PCB space left for the radio frequency front-end chip inside the mobile terminal device is gradually decreasing. To meet the requirements of miniaturization, thinness, and diversification of functions of the mobile intelligent terminal, the radio frequency front-end chip is gradually moving from discrete devices to integrated modularization. DiFEM is a diversity receiving module, a type of radio frequency module, which encapsulates switches and filters together to achieve the functions of diversity path switching and signal selection. Summary of the Utility Model
[0003] The technical problem to be solved by the embodiments of the present application is how to improve the integration and performance of the radio frequency module.
[0004] To solve the above problems, the present application discloses a radio frequency module, a link structure, and an electronic product. Through the design of 3D stacked packaging and a new link architecture, the functional chips are buried inside, so as to improve the integration and performance of the module while keeping the size of the module unchanged.
[0005] On the one hand, the present application provides a radio frequency module. The radio frequency module may at least include: a substrate; and at least one redistribution layer stacked on the substrate; wherein, at least one buried functional chip is embedded in the substrate, and at least one surface-mounted functional chip is disposed on the surface of the topmost redistribution layer among the at least one redistribution layer; the buried unit circuit is electrically connected to the redistribution layer stacked on the substrate, the surface-mounted functional chip is electrically connected to the topmost redistribution layer, and the at least one redistribution layer is electrically connected to each other; the buried functional chip at least includes a low-noise amplifier chip.
[0006] According to some embodiments of the present application, the radio frequency module may include: a substrate, a first redistribution layer, and a second redistribution layer that are stacked in sequence from bottom to top in the thickness direction; wherein, a plurality of embedded functional chips are embedded in the substrate, and a plurality of functional chips are disposed on a surface of the second redistribution layer away from the substrate; the embedded functional chips are electrically connected to the first redistribution layer, the surface-mounted functional chips are electrically connected to the second redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected to each other.
[0007] According to some embodiments of the present application, an additional substrate may be disposed above the first redistribution layer, and the second redistribution layer may be disposed on the additional substrate.
[0008] On the other hand, the present application provides a radio frequency module. The radio frequency module may at least include: a substrate, which is a multi-layer substrate; at least one redistribution layer disposed on at least one of different sub-substrates included in the multi-layer substrate; at least one embedded functional chip embedded in the substrate, and at least one surface-mounted functional chip disposed on a surface of the substrate; wherein, the embedded functional chip is electrically connected to an adjacent redistribution layer, the surface-mounted functional chip is electrically connected to an adjacent redistribution layer, and the at least one redistribution layer is electrically connected to each other; the embedded functional chip at least includes a low-noise amplifier chip.
[0009] According to some embodiments of the present application, the embedded functional chip may be located below the at least one redistribution layer.
[0010] According to some embodiments of the present application, the substrate may be a double-layer substrate, and the at least one redistribution layer may include a first redistribution layer disposed on a first sub-substrate included in the multi-layer substrate and a second redistribution layer located on a second sub-substrate above the first sub-substrate; the embedded functional chip may be embedded in the first sub-substrate, and the surface-mounted functional chip may be disposed on a surface of the second sub-substrate; the embedded functional chip is electrically connected to the first redistribution layer, the surface-mounted functional chip is electrically connected to the second redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected to each other.
[0011] According to some embodiments of the present application, the substrate is a three-layer substrate, the embedded functional chip is embedded in the first sub-substrate at the bottom layer, the at least one redistribution layer includes a first redistribution layer disposed on a second sub-substrate on the first sub-substrate, and a second redistribution layer located on a third sub-substrate above the second sub-substrate; the surface-mounted functional chip is disposed on a surface of the third sub-substrate; the embedded functional chip is electrically connected to the first redistribution layer, the surface-mounted functional chip is electrically connected to the second redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected to each other.
[0012] According to some embodiments of the present application, the electrical connection between the embedded functional chip and the redistribution layer, or between the embedded functional chip and the first redistribution layer, can be achieved through copper pillars or direct electroplating.
[0013] According to some embodiments of the present application, the embedded functional chip may at least include a low-noise amplifier chip and a switch chip.
[0014] According to some embodiments of the present application, the surface-mounted functional chip may at least include a filter chip.
[0015] On the other hand, the present application provides a link architecture of a radio frequency module as described above. The link architecture may include: a low-noise amplifier, a switch, and at least one path of a subsequent circuit connected in sequence; the subsequent circuit may at least include a filter.
[0016] On the other hand, the present application provides an electronic product, which may include the radio frequency module as described above. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The present application will be further described by way of exemplary embodiments, which will be described in detail through the drawings. These embodiments are not restrictive. In these embodiments, the same numbers represent the same structures, where:
[0018] Figure 1 is a schematic structural diagram of an exemplary radio frequency module shown in some embodiments of the present application;
[0019] Figure 2 shows a schematic structural diagram of a radio frequency module in the prior art;
[0020] Figure 3 shows an exemplary circuit diagram of a radio frequency module in the prior art;
[0021] Figure 4 shows another exemplary circuit diagram of a radio frequency module in the prior art;
[0022] Figure 5 is an exemplary circuit diagram of a radio frequency module shown in some embodiments of the present application;
[0023] Figure 6 is another exemplary circuit diagram of a radio frequency module shown in some embodiments of the present application;
[0024] Figure 7 shows the measurement results of the noise figure of a radio frequency module in the prior art;
[0025] Figure 8Exemplary measurement results of the noise figure of a radio frequency module as shown in some embodiments of the present application;
[0026] Figure 9 Shows another measurement result of the noise figure of a radio frequency module in the prior art;
[0027] Figure 10 Is another exemplary measurement result of the noise figure of a radio frequency module as shown in some embodiments of the present application;
[0028] Figure 11 Shows an exemplary layout of a radio frequency module in the prior art;
[0029] Figure 12 Is an exemplary layout of a radio frequency module as shown in some embodiments of the present application. Detailed implementation manners
[0030] To make the above objects, features, and advantages of the present application more apparent and understandable, the following will describe the detailed implementation manners of the present application with reference to the accompanying drawings. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.
[0031] In the present application, the terms "plural" and "multiple" can include two, three, four, or more. For example, the "multi-layer substrate" in the present application can include a double-layer substrate, a triple-layer substrate, or more layers of substrates. The "plural embedded functional chips" in the present application can include two embedded functional chips, three embedded functional chips, or more. The "plural surface-mounted functional chips" in the present application can include two surface-mounted functional chips, three surface-mounted functional chips, or more.
[0032] Unless otherwise defined, all technical and scientific terms used in the present application have the same meaning as commonly understood by those skilled in the technical field to which the present application belongs. The terms used in the description of the present application in this specification are only for the purpose of describing specific embodiments and are not intended to limit the present application. The term "and / or" used in the present application includes any and all combinations of one or more of the related listed items.
[0033] The existing DiFEM modules mainly include two categories of chips: switches and filters. It supports the mainstream RF frequency bands such as B1, B2, B3, B7, B8, B26, B34, B39, B40, B41, etc. in common WCDMA / LTE standards, and supports the CA carrier aggregation function including combinations such as B1+3+7, B1+3+41, B39+41, B40+41, etc. and any LB+MHB frequency band combinations. Its packaging implementation method: after the chips are packaged at the wafer level (WLP), these chips are surface-mounted to the corresponding substrate, and then the substrate is integrally encapsulated. As the requirements for the integration and performance of RF front-end modules in modern communication are getting higher and higher, to improve performance (such as receive sensitivity, noise figure, etc.), the existing mainstream solution is mainly to improve the performance of filters. However, under the requirement of small size, this solution is difficult to achieve in a short time. Or it can also improve the performance by adding functional chips, such as low-noise amplifier chips. Constrained by the traditional packaging form, it is very difficult to add extra chips, and even if it is achieved, it is difficult to compare with the previous one in terms of performance.
[0034] The RF module disclosed in this application, through the design of 3D stacked packaging and a new link architecture, adds functional chips to the module in an embedded manner, achieving performance improvement without additionally increasing the size of the module.
[0035] Some embodiments of this application are described below. It should be noted that the following description is for illustrative purposes and is not intended to limit the protection scope of this application.
[0036] Figure 1 is an exemplary structural schematic diagram of an RF module shown according to some embodiments of this application. As Figure 1 shown, the RF module 100 may include an integrated body 110 and at least one surface-mounted functional chip 120 disposed on the integrated body 110.
[0037] The integrated body 110 can be obtained by encapsulating a substrate and at least one embedded functional chip embedded in the substrate, such as through 3D stacking packaging. An exemplary implementation method can be as follows: First, obtain a carrier board, such as a glass carrier board or a metal carrier board. After mounting at least one embedded functional chip on the carrier board, it can be encapsulated, for example, using a molding compound, to form an assembly that encapsulates the at least one embedded functional chip on the carrier board. This assembly can be the substrate mentioned in this application, and at least one embedded functional unit is embedded in the substrate through the above method. By repeatedly processing RDL wiring - encapsulation - RDL wiring on the substrate (i.e., on the encapsulation layer of the assembly), at least one redistribution layer can be stacked on the substrate. Of course, the entire process can also include processes such as thinning, etching, and drilling to prepare electrical connection paths between the respective redistribution layers and the functional chips, including the electrical connection between the embedded functional chip and the redistribution layer stacked on the substrate. For example, the chip is mounted on the carrier board by backside mounting. After the encapsulation layer is thinned, connection ports such as copper pillars or pads can be exposed to facilitate the electrical connection between the embedded functional chip and the redistribution layer. Another example is that the encapsulation layer between two mutually stacked redistribution layers can be drilled through by means such as laser to form a conductive via for the electrical connection between the two redistribution layers. Finally, after removing the carrier board, the integrated body 110 can be obtained. The top layer of the integrated body 110 is a redistribution layer, and at least one surface-mounted functional chip 120 can be disposed on the surface of this redistribution layer. For example, at least one surface-mounted functional chip 120 is electrically connected to the topmost redistribution layer through surface mounting technology, flip-chip, thermosonic technology, wire bonding technology, etc.
[0038] In one example, the integrated body 110 can include a substrate, a first redistribution layer 111, and a second redistribution layer 112 stacked in sequence from bottom to top in the thickness direction. A plurality of embedded functional chips are embedded in the substrate, such as Figure 1 the 2 shown, including a low-noise amplifier chip 131 (which can also be referred to as an LNA) and a switch chip 132. A plurality of surface-mounted functional chips 120 can be disposed on the second redistribution layer 112, such as Figure 1 the 3 filter chips described. The low-noise amplifier chip 131 and the switch chip 132 can be electrically connected to the first redistribution layer 111 through copper pillars or direct electroplating. The first redistribution layer 111 and the second redistribution layer 112 can be electrically connected through the above-mentioned conductive vias, for example, by setting gold wires or electroplating in the conductive vias. Combining the foregoing formation of the redistribution layer, the encapsulation layer disposed between the first redistribution layer 111 and the second redistribution layer 112 can be referred to as an additional substrate, or a well-known packaging substrate in the art can be disposed on the first redistribution layer 111 as an additional substrate.
[0039] Another exemplary implementation of the integrated body 110 may be that the substrate is a multi-layer substrate. For example, commercially available packaging substrates such as FR4, ABF, BT, and ceramics can be used to combine and form the multi-layer substrate. Each packaging substrate can be referred to as a sub-substrate, and at least one redistribution layer included in the radio frequency component 100 can be disposed on the corresponding at least one sub-substrate. Similarly, at least one buried functional chip can be mounted on the bottom-most sub-substrate. Subsequently, encapsulation processing is performed on it to obtain an assembly, realizing the embedding of the at least one buried functional chip in the substrate. By repeating the operation of setting the sub-substrate - RDL wiring, mutually stacked redistribution layers can be formed. Consistently, processes such as thinning, etching, and drilling are used to prepare electrical connection paths between the respective redistribution layers and the functional chips, including the electrical connection between the buried functional chip and the redistribution layer stacked on the substrate. The manner of electrical connection can be as described above.
[0040] In one example, the buried functional chip can be located below all the redistribution layers.
[0041] In one example, the multi-layer substrate can be a three-layer substrate. The buried functional chip is embedded in the bottom-most first sub-substrate in the aforementioned manner. The at least one redistribution layer can include a first redistribution layer and a second redistribution layer. The first redistribution layer is disposed on the second sub-substrate above the first sub-substrate, and the second redistribution layer is disposed on the third sub-substrate above the second sub-substrate. Figure 1 To a certain extent, the structure of the above radio frequency component can also be shown. Figure 1 If the integrated body 110 is divided into three parts by two dashed lines, then each part is constructed based on a sub-substrate. The lower part of the integrated body 110 is on the first sub-substrate with the buried functional chips including the low-noise amplifier chip 131 and the switch chip 132 mounted, and after encapsulation, the second sub-substrate is disposed above it. Wiring is performed on the second sub-substrate to obtain the first redistribution layer 111, which constitutes the middle part of the integrated body 110. Subsequently, the third sub-substrate is disposed above the first redistribution layer 111, and then wiring is performed on the third sub-substrate to obtain the second redistribution layer 112, which constitutes the upper part of the integrated body 110. The surface-mounted functional chip 120 can be disposed above the second redistribution layer 112 and includes 3 filter chips. The low-noise amplifier chip 131 and the switch chip 132 can be electrically connected to the first redistribution layer 111 by means of copper pillars or direct electroplating. Electrical connection between the first redistribution layer 111 and the second redistribution layer 112 can be achieved through conductive vias, for example, by setting gold wires or electroplating in the conductive vias.
[0042] It should be noted that the above description is merely exemplary. The number of redistribution layers, embedded functional chips, and surface-mounted functional chips is not limited by the above description. For example, the number of low-noise amplifier chips included in the embedded functional chip can also be two or more, and the number of filter chips included in the surface-mounted functional chip can be one or two less, or four or more. These modifications and adjustments are within the scope of protection of this application.
[0043] Compared with existing RF modules (such as Figure 2 The RF module 200 shown in the figure does not have an embedded functional unit (that is, a low noise amplifier chip 131), and the filter chip (including the filter chip 210 and the filter chip 220) and the switch chip 230 are mounted on the surface of the substrate 240. In other words, all devices are processed by the surface mounting method. With this method, due to the size limit of the entire chip substrate, when performing the layout, the placement of the chip should be properly adjusted, which will cause some ports to be connected to the chip port unsmoothly, increasing the design difficulty. Insertion loss is difficult to guarantee, the noise is relatively large, and the sensitivity is reduced. The RF component disclosed in the present application adds a low noise amplifier chip (or can be called LNA), and the low noise amplifier chip and the switch chip are processed by an embedded method, while the filter chip continues to be processed by a surface mounting method. With this method, more chips can be accommodated in the case of chip substrates of the same size. The insertion loss of the entire RF link is mainly composed of switch loss and filter loss. When the switch loss and filter loss remain unchanged, gain compensation can be performed by adding a level of LNA, and the insertion loss caused by the link can be ignored. The addition of LNA also suppresses noise. When performing carrier aggregation (CA), even if two or more bands are turned on at the same time, crosstalk will not be generated, thus optimizing noise.
[0044] The circuit diagram of the link architecture of the existing RF module can be referred to Figure 3 and Figure 4 , Figure 3 The link architecture circuit diagram of the existing RF module in non-CA mode is shown. Figure 4 FIG. 1 shows a link architecture circuit diagram of an existing radio frequency module in the CA mode. Figure 3 and Figure 4 As shown, the link architecture of the existing radio frequency module may include a first switch 310 (or a second switch 410), and at least one subsequent circuit connected thereto. Figure 3 It includes a post-stage circuit, and Figure 4It includes two parallel post-stage circuits. Each post-stage circuit may include a first input matching 320, and a second input matching 421 or a third input matching 422, a first filter 330, and a second filter 431 or a third filter 432, as well as a first output matching 340, and a second output matching 441 or a third output matching 442. Combining Figure 3 and Figure 4 , according to the noise calculation formula, the noise figure (NF) of the existing RF module in the non-CA mode can be determined by the following formula:
[0045] NF = IL1 + IL2
[0046] Wherein, IL1 represents the switch insertion loss, and IL2 represents the filter insertion loss. The general switch insertion loss can be 0.7 dB@HB, and the filter insertion loss can be 2 dB@HB. Wherein, @HB can represent in the high frequency band. Then, according to the above noise calculation formula, the noise figure of the existing RF module in the non-CA mode can be obtained as 0.7 dB + 2 dB = 2.7 dB. In the CA mode, for example, when 2 bands are simultaneously turned on, the filter will generate a mismatch insertion loss, generally 3 dB@HB. Then, based on the above calculation formula, the noise figure of the existing RF module in the CA mode can be obtained as 0.7 dB + 3 dB = 3.7 dB.
[0047] The circuit diagram of the link architecture of the RF module disclosed in the present application can be referred to Figure 5 and Figure 6 , Figure 5 shows the circuit diagram of the link architecture of the RF module disclosed in the present application in the non-CA mode, Figure 6 shows the circuit diagram of the link architecture of the RF module disclosed in the present application in the CA mode (for example, carrier aggregation of 2 bands). The link architecture may include a low-noise amplifier, a switch, and at least one post-stage circuit connected in sequence. The post-stage circuit may at least include a filter. As Figure 5 shown, the link architecture includes one post-stage circuit for implementing the non-CA mode of the RF circuit. The link architecture 500 may include a first LNA 510, a third switch 520, a fourth input matching 530, a fourth filter 540, and a fourth output matching 550. As Figure 6The shown link architecture includes two parallel post-stage circuits for implementing the CA mode of the RF circuit. The link structure 600 may include a second LNA 610 at the front stage, a fourth switch 620 connected to the second LNA 610, and two parallel post-stage circuits connected to the switch. Each post-stage circuit may be similar and may include a fifth input matching 631 or a sixth input matching 632, a fifth filter 641 or a sixth filter 642, and a fifth output matching 651 or a sixth output matching 652. The input matching can be implemented using passive components (e.g., a matching network composed of inductors and capacitors), active components (e.g., a tuned amplifier), or a dedicated matching network (e.g., a Balun or a transformer). The output matching can be a matching network composed of passive components (e.g., inductors, capacitors, transformers, etc.), such as an L-type matching network, a π-type matching network, a T-type matching network, a transformer matching, etc. Among them, the input matching and the output matching can be of the same type of matching network or different. Any element that can implement the functions of the above components can be applicable, without being restrictive.
[0048] Combined Figure 5 with Figure 6 , the noise figure of the RF component disclosed in this application can be determined according to the following noise calculation formula:
[0049] NF = NF LNA +(IL1 + IL2) / Gain
[0050] Where, NF LNA represents the LNA noise, and Gain represents the LNA gain. The general LNA noise can be 1.5 dB, and the LNA gain is generally 10 dB. Then, according to the above noise calculation formula, it can be obtained that the noise figure of the RF module disclosed in this application in the non-CA mode is 1.5 dB+(0.7 dB + 2 dB) / 10 = 1.77 dB. According to the comparison, in the case of adding one more stage of LNA, the noise figure of the RF module disclosed in this application in the non-CA mode is optimized. Similarly, it can be determined that the noise figure of the RF module disclosed in this application in the CA mode is 1.5 dB+(0.7 dB + 3 dB) / 10 = 1.87 dB. According to the comparison, the noise figure of the existing RF module deteriorates by 1 dB (3.7 dB - 2.7 dB) in the CA mode compared with the non-CA mode, while the noise figure of the RF module disclosed in this application only deteriorates by 0.1 dB (1.87 dB - 1.77 dB) in the CA mode compared with the non-CA mode, and there is almost no difference between the two. The RF module disclosed in this application has a great improvement in the noise in both the CA mode and the non-CA mode.
[0051] The simulation test results of the noise figure can be referred to Figures 7 - 10 .Figure 7 It shows the noise simulation results of the RF module in the prior art in non-CA mode, and the simulated noise figure is 2.878. Figure 8 It shows the noise simulation results of the RF module according to some embodiments of the present application in non-CA mode. The simulated noise figure is 1.932. Combining the foregoing theoretical calculation results, the simulation results are basically consistent with them. The noise of the RF module disclosed in the present application has been significantly optimized when adding one stage of LNA.
[0052] Figure 9 It shows the noise simulation results of the RF module in the prior art in CA mode, and the simulated noise figure is 3.848. Figure 10 It shows the noise simulation results of the RF module according to some embodiments of the present application in CA mode. The simulated noise figure is 2.036. Combining the foregoing theoretical calculation results, the simulation results are basically consistent with them. In CA mode, the noise of the RF module disclosed in the present application has also been significantly optimized. (Wherein, m1 and m2 respectively represent the test codes of different frequency bands and do not have restrictive meanings).
[0053] Figure 11 and Figure 12 respectively show the layout of the RF module in the prior art and the layout of the RF module disclosed in the present application. As Figure 11 shown, due to the filter performance and considering the filter mismatch in CA mode, 5 filters are used in the link architecture of the existing RF module, including F11 (B8, B26 filter), F12 (B1B2B3 filter), F13 (B34B39 filter), F14 (B7B40 filter) and F15 (B41 filter). And, the switch chip S1 is surface-mounted. For the RF module disclosed in the present application, after using the link architecture with added LNA, the filter mismatch in CA mode can be ignored. According to the classification of low frequency, intermediate frequency, and high frequency, only 3 filters are needed, that is, the low-frequency filter F21 (B8 + B26 filter), the intermediate-frequency filter F22 (B1 + B2 + B3 + B34 + B39 filter), and the high-frequency filter F23 (B7 + B40 + B41 filter). Among them, the switch chip S2 is buried. In this way, the production cost can be reduced.
[0054] In addition, under the link architecture of the existing RF module, there are only switches and filters. To improve the product performance, the lower the loss of the filter, the better. Considering the current production process, taking the filter insertion loss of 2.3 dB as a common index, the yield is only 70%. In the link architecture of the RF module disclosed in the present application, the gain of the LNA is 10 dB, and the design index of the filter insertion loss can be relaxed to 4 dB, reducing the design difficulty and also improving the yield, which can reach 95%. In this way, the yield of the product can be improved. The RF module provided by the present application uses the method of embedding functional chips to improve the integration of the finished product in the unit circuit mode while ensuring the size remains unchanged, reducing the circuit design difficulty, and providing conditions for the product to have high performance. By adding an LNA chip, the receiving sensitivity can be improved and the performance can be enhanced. Since the functional chips in the present application are embedded, compared with the existing packaging method, more unit circuits can be integrated under the condition of the same size, and the design is more concise and efficient. At the same time, the LNA is a broadband LNA that can cover HB and MB, eliminating the need for band division design and being more economical. Moreover, the LNA has a fixed voltage and does not require an additional power supply, simplifying the design. In addition, by adding an LNA, the noise figure is optimized.
[0055] Some embodiments of the present application also disclose an electronic product. The electronic product may have the RF module as described above.
[0056] The basic concepts of the present application have been described. Obviously, for those skilled in the art, the above detailed disclosure is only an example and does not constitute a limitation to this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements, and corrections to this specification. Such modifications, improvements, and corrections are suggested in this specification, so such modifications, improvements, and corrections still fall within the spirit and scope of the exemplary embodiments of this specification.
[0057] It should be understood that the embodiments described in this specification are only used to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this specification can be considered to be in accordance with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly introduced and described in this specification.
[0058] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.
[0059] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patented application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.
Claims
1. A radio frequency module, characterized in that: The radio frequency module at least includes: substrate; and At least one redistribution layer is stacked on the substrate; wherein, At least one embedded functional chip is embedded in the substrate, and at least one surface mounted functional chip is disposed on the surface of the uppermost redistribution layer in the at least one redistribution layer; The embedded functional chip and the redistribution layer stacked on the substrate, the surface-mounted functional chip and the redistribution layer located on the top layer, and the at least one redistribution layer are electrically connected to each other; The embedded functional chip at least includes a low noise amplifier chip.
2. The radio frequency module according to claim 1, characterized in that: The radio frequency module comprises: A substrate, a first redistribution layer, and a second redistribution layer are sequentially stacked from bottom to top in the thickness direction; wherein, A plurality of embedded functional chips are embedded in the substrate, and a plurality of surface mounted functional chips are arranged on a surface of the second redistribution layer away from the substrate; The embedded functional chip and the first redistribution layer, the surface-mounted functional chip and the second redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected to each other.
3. The radio frequency module according to claim 2, characterized in that: An additional substrate is disposed on the first redistribution layer, and the second redistribution layer is disposed on the additional substrate.
4. A radio frequency module, characterized in that: The radio frequency module at least includes: A substrate, wherein the substrate is a multi-layer substrate; At least one redistribution layer is disposed on at least one of the different sub-substrates included in the multi-layer substrate; At least one embedded functional chip embedded in the substrate, and at least one surface mounted functional chip disposed on the surface of the substrate; wherein, The embedded functional chip and the adjacent redistribution layer, the surface mounted functional chip and the adjacent redistribution layer, and the at least one redistribution layer are electrically connected to each other; The embedded functional chip at least includes a low noise amplifier chip.
5. The radio frequency module according to claim 4, characterized in that: The embedded functional chip is located below the at least one redistribution layer.
6. The radio frequency module according to claim 4, characterized in that: The substrate is a three-layer substrate, the embedded functional chip is embedded in the first sub-substrate located at the bottom layer, the at least one redistribution layer includes a first redistribution layer arranged on the second sub-substrate located on the first sub-substrate, and a second redistribution layer on the third sub-substrate located above the second sub-substrate; the surface-mounted functional chip is arranged on the surface of the third sub-substrate; the embedded functional chip and the first redistribution layer, the surface-mounted functional chip and the second redistribution layer, and the first redistribution layer and the second redistribution layer are electrically connected respectively.
7. The radio frequency module according to claim 6, characterized in that: The electrical connection between the embedded functional chip and the redistribution layer, or between the embedded functional chip and the first redistribution layer, is achieved through copper pillars or direct electroplating.
8. The radio frequency module according to any one of claims 1 to 6, characterized in that: The embedded functional chip also includes a switch chip.
9. The radio frequency module according to any one of claims 1 to 6, characterized in that: The surface-mount functional chip at least includes a filter chip.
10. A link architecture, the link architecture being applied to the radio frequency module according to any one of claims 1 to 9, characterized in that: The link architecture comprises: A low noise amplifier, a switch and at least one subsequent circuit connected in sequence; The post-stage circuit at least includes a filter.
11. An electronic product, characterized in that: Comprising a radio frequency module as described in any one of claims 1 to 9.