Crucible structure

Abstract

The utility model discloses a crucible structure, which relates to the technical field of gallium oxide crystal growth, and comprises a crucible and a separation structure, the separation structure is fixedly arranged in the crucible and forms a feeding cavity in the crucible, the area in the crucible except the feeding cavity is a crystallization area, the separation structure is provided with a flow guide structure, and the flow guide structure is arranged in the crystallization area. The feeding area and the crystallization area are communicated only through the flow guide structure, a plurality of through holes communicated with the feeding cavity and the outside of the crucible are formed in the crucible or the separation structure, the through holes are used for being communicated with the discharging end of a feeding device, and the through holes are further used for being communicated with the air outlet end of an oxygen conveying device. According to the crucible structure, continuous feeding can be achieved in the growth process of gallium oxide crystals, the crystal growth stability is high, and the oxygen content is convenient to control.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium oxide crystal growth, in particular to a crucible structure. Background Art

[0002] The currently common gallium oxide crystal growth process is to place powder or blocks of materials in a crucible, heat them to a molten state to form a melt, and then use a lifting device to make the molten gallium oxide crystallize and grow on a seed crystal to form a gallium oxide crystal. If a larger and longer gallium oxide crystal is to be obtained, more raw materials are required. Due to the limitation of the crucible volume, even if the crucible is filled with raw materials at one time, it is difficult to meet the needs of crystal growth; as the crystal growth progresses, the melt interface will gradually decrease, which will cause the growth interface to change with the change of the melt interface, affecting crystal growth. If raw materials are directly added to the melt in the crucible, it will cause fluctuations in the melt interface and generate bubbles in the melt, further affecting the stability of crystal growth; in addition, the gallium phase decomposed from gallium oxide at high temperature will corrode the crucible, resulting in damage to the crucible. Although the formation of the gallium phase can be inhibited by controlling the oxygen content, it is also inconvenient to control the oxygen content in the melt. Therefore, there is an urgent need for a crucible structure that can achieve continuous feeding during the gallium oxide crystal growth process, has high crystal growth stability, and is convenient for controlling the oxygen content. Summary of the Utility Model

[0003] The purpose of the utility model is to provide a crucible structure to solve the problems existing in the above-mentioned prior art, which can achieve continuous feeding during the gallium oxide crystal growth process, has high crystal growth stability, and is convenient for controlling the oxygen content.

[0004] To achieve the above purpose, the utility model provides the following scheme:

[0005] The utility model provides a crucible structure, including a crucible and a partition structure. The partition structure is fixedly arranged in the crucible and forms a feeding cavity in the crucible. The area in the crucible except the feeding cavity is a crystallization area. A diversion structure is arranged on the partition structure. The feeding area and the crystallization area are only communicated through the diversion structure. A plurality of through holes communicating the feeding cavity and the outside of the crucible are arranged on the crucible or the partition structure. The through holes are used to communicate with the discharge end of a feeding device and are also used to communicate with the air outlet end of an oxygen delivery device.

[0006] Preferably, the separation structure includes a partition wall and a sealing screen. The partition wall is a cylindrical structure, and the sealing screen is annular. One end of the partition wall is fixedly connected to the inner bottom surface of the crucible. There is a gap between the partition wall and the inner side wall of the crucible. The inner circumferential edge of the sealing screen is detachably connected to the top end of the partition wall, and the outer circumferential edge of the sealing screen is detachably connected to the top end of the crucible. The partition wall, the sealing screen, and a part of the inner bottom surface of the crucible enclose the feeding cavity. The inside of the cylinder of the partition wall forms the crystallization region, and the diversion structure is arranged on the partition wall.

[0007] Preferably, the through hole is arranged on the sealing screen.

[0008] Preferably, the diversion structure is arranged at the bottom end of the partition wall.

[0009] Preferably, the diversion structure includes a plurality of diversion holes, and the diversion holes are sequentially arranged along the circumferential direction of the bottom end of the partition wall.

[0010] Preferably, the number of the diversion holes is 2 - 16.

[0011] Preferably, the diversion holes are round holes, and the diameter of the diversion holes is 1 mm - 3 mm.

[0012] Preferably, the through hole is a round hole, and the diameter of the through hole is 5 mm - 10 mm.

[0013] Preferably, 4 through holes are arranged on the sealing screen.

[0014] Preferably, the crucible, the sealing screen, and the partition wall are all made of iridium material.

[0015] The utility model has achieved the following technical effects compared with the prior art:

[0016] For the crucible structure provided by the utility model, when growing gallium oxide crystals, raw materials can be continuously added into the feeding cavity through the through hole as needed. After the raw materials enter the feeding cavity, they are heated and form a melt. The melt enters the crystallization region through the diversion structure and contacts the seed crystal, meeting the needs of gallium oxide crystal growth, and can also avoid the change of the melt interface by continuous feeding, avoiding affecting crystal growth. Moreover, since the crystallization region and the feeding cavity are only connected through the diversion structure, after the raw materials enter the feeding cavity, only fluctuations and bubbles will be generated in the feeding cavity, without affecting the stability of crystal growth in the crystallization region. In addition, oxygen can be introduced into the through hole through an oxygen delivery device to input oxygen into the feeding cavity, thereby conveniently controlling the oxygen content in the melt and preventing excessive gallium phase from being decomposed from gallium oxide at high temperature and damaging the crucible. Description of the Drawings

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] Figure 1 It is a cross-sectional view of the crucible structure provided by the present invention;

[0019] Figure 2 It is Figure 1 a partial enlarged view of part A in

[0020] Figure 3 It is a top view of the crucible structure provided by the present invention;

[0021] In the figure: 1, crucible; 2, partition wall; 3, sealing screen; 4, diversion hole; 5, feeding cavity; 6, crystallization area; 7, through hole; 8, seed crystal. Detailed implementation manners

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0023] The purpose of the present invention is to provide a crucible structure to solve the problems existing in the above-mentioned prior art, which can achieve continuous feeding during the crystal growth of gallium oxide, has relatively high crystal growth stability, and is convenient to control the oxygen content.

[0024] To make the above-mentioned objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the drawings and specific implementation manners.

[0025] The present invention provides a crucible structure, as Figures 1-3 shown, including a crucible 1 and a partition structure. The partition structure is fixedly arranged in the crucible 1 and forms a feeding cavity 5 in the crucible 1. The area in the crucible 1 other than the feeding cavity 5 is the crystallization area 6. A diversion structure is arranged on the partition structure, and the feeding area and the crystallization area 6 are only connected through the diversion structure. A through hole 7 communicating the feeding cavity 5 and the outside of the crucible 1 is arranged on the crucible 1 or the partition structure. The through hole 7 is used to communicate with the discharge end of the feeding device, and the through hole 7 is also used to communicate with the outlet end of the oxygen delivery device.

[0026] The crucible structure provided by the present utility model can continuously add raw materials into the feeding cavity 5 through the through hole 7 as needed during the growth of gallium oxide crystallization. After the raw materials enter the feeding cavity 5, they are heated and form a melt. The melt enters the crystallization region 6 through the diversion structure and contacts the seed crystal 8, meeting the requirements for the growth of gallium oxide crystallization and being able to avoid changes in the melt interface through continuous feeding, thus avoiding affecting crystal growth. Moreover, since the crystallization region 6 and the feeding cavity 5 are only connected through the diversion structure, after the raw materials enter the feeding cavity 5, only fluctuations and bubbles will occur in the feeding cavity 5, without affecting the stability of crystal growth in the crystallization region 6. Additionally, oxygen can be introduced into the through hole 7 through an oxygen delivery device to input oxygen into the feeding cavity 5, thereby conveniently controlling the oxygen content in the melt and preventing excessive gallium phase from being decomposed from gallium oxide at high temperatures and damaging the crucible 1. Among them, the number of through holes 7 can be set as needed. For example, if one through hole 7 is set, the through hole 7 can be connected to the discharge end of the feeding device when continuous feeding is required, and the through hole 7 can be connected to the outlet end of the oxygen delivery device when controlling the oxygen content. If multiple through holes 7 are set, they can be divided into feeding holes and air inlet holes according to functions. The feeding holes are used to connect to the discharge end of the feeding device, and the air inlet holes are used to connect to the outlet end of the oxygen delivery device. When multiple through holes 7 are set, feeding can be carried out into any one through hole 7 located on the crucible 1, or feeding can be carried out into multiple through holes 7 simultaneously.

[0027] In a preferred embodiment of this embodiment, the partition structure includes a partition wall 2 and a sealing screen 3. The partition wall 2 is a cylindrical structure, and the sealing screen 3 is annular. One end of the partition wall 2 is fixedly connected to the inner bottom surface of the crucible 1. There is a gap between the partition wall 2 and the inner side wall of the crucible 1. The inner circumferential edge of the sealing screen 3 is detachably connected to the top end of the partition wall 2, and the outer circumferential edge of the sealing screen 3 is detachably connected to the top end of the crucible 1. The partition wall 2, the sealing screen 3, and a part of the inner bottom surface of the crucible 1 enclose the feeding cavity 5. The crystallization region 6 is formed inside the cylinder of the partition wall 2, and the diversion structure is arranged on the partition wall 2. When heating the crucible 1, the wall surface of the crucible 1 is heated, and heat is transferred into the feeding cavity 5 and the crystallization region 6. Due to the blocking of the partition wall 2 and the sealing screen 3, more heat will accumulate in the feeding cavity 5, making the temperature in the feeding cavity 5 higher than that in the crystallization region 6 and forming a high-temperature gradient region in the feeding cavity 5, so that the melting effect of the raw materials is better after entering the feeding region, meeting the requirement of melting the materials. The sealing screen 3 can be detached separately, facilitating the cleaning and inspection of the feeding cavity 5. Among them, the shape of the partition wall 2 can be set in various ways. For example, it can be set as a cylindrical barrel or a square barrel, as long as it can meet the requirements for crystal growth.

[0028] It should be noted that for the crucible structure provided by the present utility model, the connection relationships between the outer circumferential edge of the sealing screen 3 and the top end of the crucible 1, and between the inner circumferential edge of the sealing screen 3 and the top end of the partition wall 2 can be set as required. In addition to the detachable connection in this embodiment, it can also be set as a fixed connection according to needs.

[0029] In a preferred embodiment of the first embodiment, in order to facilitate the introduction of oxygen and the feeding of materials, the through hole 7 is arranged on the sealing screen 3.

[0030] In a preferred embodiment of the first embodiment, the guiding structure is arranged at the bottom end of the partition wall 2. Arranging the guiding structure at the bottom end of the partition wall 2 can enable the melt to enter from the bottom of the crystallization region 6, further reducing the fluctuation of the melt.

[0031] In a preferred embodiment of the first embodiment, the guiding structure includes a plurality of guiding holes 4, and the guiding holes 4 are arranged in sequence along the circumferential direction of the bottom end of the partition wall 2. The plurality of guiding holes 4 arranged in sequence along the circumferential direction of the partition wall can enable the melt to enter the crystallization region 6 evenly.

[0032] In a preferred embodiment of the first embodiment, 2 - 16 guiding holes 4 are provided.

[0033] In a preferred embodiment of the first embodiment, the guiding holes 4 are circular holes, and the diameter of the guiding holes 4 is 1 mm - 3 mm.

[0034] In a preferred embodiment of the first embodiment, the through hole 7 is a circular hole, and the diameter of the through hole 7 is 5 mm - 10 mm.

[0035] In a preferred embodiment of the first embodiment, 4 through holes 7 are arranged on the sealing screen 3.

[0036] It should be noted that in the crucible 1 structure capable of continuous feeding provided by the present utility model, the sizes of the through hole 7 and the guiding holes 4 can be set according to the particle size of the raw materials, and the numbers of the through hole 7 and the guiding holes 6 can also be set as required.

[0037] In a preferred embodiment of the first embodiment, the crucible 1, the sealing screen 3 and the partition wall 2 are all made of iridium alloy. Iridium alloy has an extremely high melting point and excellent high-temperature resistance performance, and can remain stable at the high temperature required for the growth of gallium oxide, and is not easy to deform or melt.

[0038] Specific examples are used in the present utility model to elaborate on the principle and implementation manner of the present utility model. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present utility model; at the same time, for those of ordinary skill in the art, according to the idea of the present utility model, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present utility model.

Claims

1. A crucible structure, characterized in that: It includes a crucible and a partition structure. The partition structure is fixedly arranged inside the crucible and forms a feeding cavity inside the crucible. The area inside the crucible except the feeding cavity is the crystallization area. A flow guiding structure is arranged on the partition structure. The feeding cavity and the crystallization area are only communicated through the flow guiding structure. A number of through holes communicating the feeding cavity and the outside of the crucible are arranged on the crucible or the partition structure. The through holes are used to communicate with the discharge end of the feeding device and are also used to communicate with the air outlet end of the oxygen delivery device.

2. The crucible structure according to claim 1, wherein: The partition structure includes a partition wall and a sealing screen. The partition wall is a cylindrical structure, and the sealing screen is annular. One end of the partition wall is fixedly connected to the inner bottom surface of the crucible. There is a gap between the partition wall and the inner side wall of the crucible. The inner circumferential edge of the sealing screen is detachably connected to the top end of the partition wall, and the outer circumferential edge of the sealing screen is detachably connected to the top end of the crucible. The partition wall, the sealing screen and part of the inner bottom surface of the crucible enclose the feeding cavity, and the inside of the cylinder of the partition wall forms the crystallization area. The flow guiding structure is arranged on the partition wall.

3. The crucible structure according to claim 2, wherein: The through holes are arranged on the sealing screen.

4. The crucible structure according to claim 3, wherein: The flow guiding structure is arranged at the bottom end of the partition wall.

5. The crucible structure according to claim 4, wherein: The flow guiding structure includes a plurality of flow guiding holes, and the flow guiding holes are sequentially arranged along the circumferential direction of the bottom end of the partition wall.

6. The crucible structure according to claim 5, characterized in that: There are 2 - 16 flow guiding holes.

7. The crucible structure according to claim 5, characterized in that: The flow guiding holes are round holes, and the diameter of the flow guiding holes is 1 mm - 3 mm.

8. The crucible structure according to claim 2, wherein: The through holes are round holes, and the diameter of the through holes is 5 mm - 10 mm.

9. The crucible structure according to claim 2, wherein: There are 4 through holes arranged on the sealing screen.

10. The crucible structure according to claim 2, wherein: The crucible, the sealing screen and the partition wall are all made of iridium alloy.

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