Heating device and single crystal manufacturing apparatus

Abstract

The utility model discloses a heating device and single crystal manufacturing equipment, and belongs to the technical field of single crystal manufacturing, the heating device is used for heating single crystals, and comprises a body, and the body is provided with a first side surface; the body is also provided with a through hole, a first diversion trench and a second diversion trench; the through hole penetrates through the first surface and the second surface; the first diversion trench penetrates through the first surface and the second surface, and the first diversion trench is communicated with the through hole; the second diversion trench at least penetrates through the first surface and further penetrates through the first side surface; the second diversion trenches and the first diversion trenches are arranged at intervals in the circumferential direction of the body, and the second diversion trenches and the through holes are arranged at intervals; the second diversion trench is used for guiding current far away from the single crystal to the through hole so as to increase the center temperature of the single crystal. By arranging the second diversion trench, the current is closer to the center of the coil, so that the temperature of the center of the coil is increased, the temperature gradient ratio change in the radial direction is reduced, and the risk of single crystal cracking is reduced.

Description

Technical Field

[0001] This application belongs to the technical field of single crystal manufacturing, and particularly relates to a heating device and a single crystal manufacturing apparatus. Background Art

[0002] During the process of single crystal preparation, heat is generated in the center by a coil, so that the polycrystalline raw material passing through the through hole forms a molten zone and generates a single crystal.

[0003] As the size of the single crystal to be prepared increases, the heat generated by the coil in the center is insufficient, there is a risk of solidification in the molten zone, the temperature gradient ratio in the radial direction of the single crystal changes greatly, and the risk of single crystal cracking increases. Summary of the Utility Model

[0004] Utility Model Objectives: This application provides a heating device for solving the technical problem of increased risk of single crystal cracking; another objective of this application is to provide a single crystal manufacturing apparatus.

[0005] Technical Solution: This application provides a heating device for heating polycrystals, including a body, the body having a first surface, a second surface, and a first side surface, the first surface and the second surface facing away from each other along the axial direction of the body, and the first side surface being located between the first surface and the second surface and connecting the first surface and the second surface respectively;

[0006] The body further has a through hole, a first diversion groove, and a second diversion groove;

[0007] The through hole penetrates through the first surface and the second surface; the body can receive an electric current and heat the polycrystals passing through the through hole;

[0008] The first diversion groove penetrates through the first surface and the second surface, and the first diversion groove communicates with the through hole. The first diversion groove is used to guide the electric current away from the polycrystals to reduce the edge temperature of the polycrystals;

[0009] The second diversion groove penetrates at least the first surface, and the second diversion groove also penetrates the first side surface; the second diversion groove is spaced from the first diversion groove along the circumferential direction of the body, and the second diversion groove is spaced from the through hole; the second diversion groove is used to guide the electric current away from the polycrystals towards the through hole to increase the central temperature of the polycrystals.

[0010] In some embodiments, the body has a plurality of the first diversion grooves, and the plurality of the first diversion grooves are spaced from each other along the circumferential direction of the body.

[0011] In some embodiments, the body has a plurality of second diversion grooves; along the circumferential direction, at least one of the second diversion grooves is located between two adjacent first diversion grooves.

[0012] In some embodiments,

[0013] The first diversion groove has a first groove wall, a second groove wall, and a third groove wall. The first groove wall and the second groove wall are oppositely arranged along the circumferential direction and are respectively connected to the pore wall of the through hole; the third groove wall is located between the first groove wall and the second groove wall along the circumferential direction of the body and is respectively connected to the first groove wall and the second groove wall;

[0014] The second diversion groove has a fourth groove wall, a fifth groove wall, and a sixth groove wall. The fourth groove wall and the fifth groove wall are oppositely arranged along the circumferential direction and are respectively connected to the first side surface. The sixth groove wall is located between the fourth groove wall and the fifth groove wall along the circumferential direction and is respectively connected to the fourth groove wall and the fifth groove wall;

[0015] Along the direction perpendicular to the axial direction, the first groove wall has a minimum distance L1, the fourth groove wall has a minimum distance L2, and there is a minimum distance L3 between the pore wall and the first side surface, satisfying: L1 + L2 > L3.

[0016] In some embodiments, the second diversion groove forms an opening on the first side surface. Along the direction from the through hole to the opening, the distance between the fourth groove wall and the fifth groove wall increases along the circumferential direction.

[0017] In some embodiments,

[0018] The body further has a through groove that penetrates the first surface and the second surface. The through groove also penetrates the first side surface. The through groove is communicated with the through hole. The through groove is arranged at intervals from the first diversion groove along the circumferential direction. The through groove is used to guide the current to surround the through hole;

[0019] The body has a plurality of the second diversion grooves, and at least one of the second diversion grooves is located between the through groove and the first diversion groove along the circumferential direction.

[0020] In some embodiments, the second diversion groove also penetrates the second surface.

[0021] In some embodiments, the heating device further includes a protrusion, and the protrusion is connected to the second surface.

[0022] In some embodiments, the heating device includes a plurality of the protrusions, and the plurality of protrusions are arranged at intervals along the circumferential direction of the body.

[0023] In some embodiments, the protrusion includes a third surface and a fourth surface facing away from each other in the axial direction, the third surface is connected to the fourth surface, and the protrusion further includes a second side surface, and the second side surface is connected to the first side surface.

[0024] In some embodiments, the protrusion further includes a third side surface and a fourth side surface, the third side surface and the fourth side surface are oppositely arranged along the circumferential direction of the body, the third side surface is located between the third surface and the fourth surface in the axial direction and is respectively connected to the third surface and the fourth surface, and the fourth side surface is located between the third surface and the fourth surface in the axial direction and is respectively connected to the third surface and the fourth surface; the second side surface is located between the third side surface and the fourth side surface in the circumferential direction and is respectively connected to the third side surface and the fourth side surface; along the direction from the through hole to the first side surface, the distance between the third side surface and the fourth side surface in the circumferential direction increases.

[0025] In some embodiments, along the axial direction, the orthographic projection of the groove wall of the second diversion groove on the plane where the second surface is located is located within the orthographic projection of the protrusion on the plane where the second surface is located.

[0026] Correspondingly, the present application further provides a single crystal manufacturing device, including the heating device as described in any one of the above embodiments.

[0027] Beneficial effects: Compared with the prior art, the heating device provided in the embodiments of the present application is used to heat a single crystal, and includes a body. The body has a first surface, a second surface and a first side surface. The first surface and the second surface face away from each other in the axial direction of the body. The first side surface is located between the first surface and the second surface and is respectively connected to the first surface and the second surface; the body further has a through hole, a first diversion groove and a second diversion groove; the through hole penetrates through the first surface and the second surface; the body can receive current and heat the single crystal passing through the through hole; the first diversion groove penetrates through the first surface and the second surface, and the first diversion groove is communicated with the through hole. The first diversion groove is used to guide the current away from the single crystal to reduce the edge temperature of the single crystal; the second diversion groove at least penetrates the first surface, and the second diversion groove also penetrates the first side surface; the second diversion groove and the first diversion groove are arranged at intervals along the circumferential direction of the body, and the second diversion groove and the through hole are arranged at intervals; the second diversion groove is used to guide the current far from the single crystal towards the through hole to increase the central temperature of the single crystal. The present application improves the temperature at the center of the coil by arranging the second diversion groove so that the current is closer to the center of the coil, thereby reducing the change in the temperature gradient ratio in the radial direction and reducing the risk of single crystal cracking. In addition, the second diversion groove opened on the first side surface can also prevent the current from passing between the second diversion groove and the first side surface, but only from between the through hole and the second diversion groove, further increasing the temperature at the center of the coil. Description of the Drawings

[0028] In combination with the accompanying drawings, through the detailed description of the specific embodiments of the present application, the technical solutions and other beneficial effects of the present application will become obvious.

[0029] Figure 1 Schematic structural diagram of the heating device provided by the embodiment of the present application;

[0030] Figure 2 Schematic diagram of the current direction of the heating device provided by the embodiment of the present application;

[0031] Figure 3 Schematic structural diagram of the heating device provided by the embodiment of the present application from another angle;

[0032] Figure 4 Schematic diagram of the current direction of the heating device provided by the embodiment of the present application from another angle;

[0033] Figure 5 Front view of the heating device provided by the embodiment of the present application;

[0034] Figure 6 Cross-sectional view of the heating device provided by the embodiment of the present application during operation;

[0035] Figure 7 Schematic diagram of the dimensions of the first diversion groove and the second diversion groove in the heating device provided by the embodiment of the present application;

[0036] Figure 8 Schematic diagram of the dimensions of the protrusion in the heating device provided by the embodiment of the present application.

[0037] Reference numerals: 100 - body, 110 - first surface, 120 - second surface, 130 - first side surface, 131 - opening, 140 - through hole, 141 - hole wall, 150 - through groove, 160 - first diversion groove, 161 - first groove wall, 162 - second groove wall, 163 - third groove wall, 170 - second diversion groove, 171 - fourth groove wall, 172 - fifth groove wall, 173 - sixth groove wall, 200 - protrusion, 210 - third surface, 220 - fourth surface, 230 - second side surface, 240 - third side surface, 250 - fourth side surface. Detailed Embodiments

[0038] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in combination with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0039] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "connected" and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a connection capable of mutual communication; it can be directly connected, or indirectly connected through an intermediate medium, and can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances. In the description of the present application, "a plurality of" means two or more, unless otherwise clearly specifically limited. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features.

[0040] The following disclosure provides many different embodiments or examples for implementing different structures of the present application. To simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are only examples and are not intended to limit the present application.

[0041] During the process of single crystal preparation, heat is generated in the center by a coil, so that the polycrystalline raw material passing through the through hole 140 forms a molten zone and generates a single crystal.

[0042] As the size of the single crystal to be prepared increases, the heat generated by the coil in the center is insufficient, and there is a risk of solidification of the molten zone. The temperature gradient ratio in the radial direction of the single crystal changes greatly, and the risk of single crystal cracking increases.

[0043] To solve the above technical problem of increasing the risk of single crystal cracking, the first embodiment of the present application provides a heating device. Please refer to Figure 1 and Figure 3For heating polycrystals, it includes a body 100. The body 100 has a first surface 110, a second surface 120, and a first side surface 130. The first surface 110 and the second surface 120 face away from each other along the axial direction X of the body 100. The first side surface 130 is located between the first surface 110 and the second surface 120 and connects the first surface 110 and the second surface 120 respectively. The body 100 also has a through hole 140, a first diversion groove 160, and a second diversion groove 170. The through hole 140 penetrates through the first surface 110 and the second surface 120. The body 100 can receive an electric current and heat the polycrystals passing through the through hole 140. The first diversion groove 160 penetrates through the first surface 110 and the second surface 120, and the first diversion groove 160 communicates with the through hole 140. The first diversion groove 160 is used to guide the electric current away from the polycrystals to reduce the edge temperature of the polycrystals. The second diversion groove 170 at least penetrates through the first surface 110, and the second diversion groove 170 also penetrates through the first side surface 130. The second diversion groove 170 is arranged at an interval from the first diversion groove 160 along the circumferential direction Y of the body 100, and the second diversion groove 170 is arranged at an interval from the through hole 140. The second diversion groove 170 is used to guide the electric current away from the polycrystals towards the through hole 140 to increase the central temperature of the polycrystals.

[0044] Wherein, the axial direction X is the direction indicated by the X arrow in the drawing.

[0045] It can be understood that the electric current has a skin effect. When there is an alternating current or an alternating electromagnetic field in a conductor, the current distribution inside the conductor is uneven, and the current is concentrated in the surface part of the conductor. That is to say, the current is concentrated in a thin layer on the outer surface of the conductor. The closer to the surface of the conductor, the greater the current density, and the actual current inside the conductor is smaller. Please refer to Figure 2 , that is, part of the path of the electric current is located on the first surface 110.

[0046] In some embodiments, the heating device is made of the same material and the resistance of each part is the same. The electric current tends to follow the path with the smallest resistance, that is, the path of the resistance in the heating device is the shortest path. The presence of the first diversion groove 160 makes the path of the electric current shift away from the through hole 140 to bypass the first diversion groove 160, and when the electric current bypasses the first diversion groove 160, it can avoid the temperature of the polycrystalline raw material in the through hole 140 from being too high. The presence of the second diversion groove 170 makes the path of the electric current shift towards the through hole 140 to bypass the second diversion groove 170, and when the electric current bypasses the second diversion groove 170, it will be closer to the center of the polycrystalline raw material, which can avoid the central temperature of the polycrystalline raw material in the through hole 140 from being too low and reduce the risk of solidification of the molten zone of the polycrystalline raw material.

[0047] In the above embodiments, by respectively providing the first flow guide groove 160 and the second flow guide groove 170 to make the thermal field in the through hole 140 uniform, the change in the temperature gradient ratio of the polycrystalline raw material located in the through hole 140 in the direction perpendicular to the axial direction X is reduced. In addition, the second flow guide groove 170 penetrating the first side surface 130 can also prevent the current from flowing between the first side surface 130 and the second flow guide groove 170, that is, the second flow guide groove 170 penetrating the first side surface 130 enables the current to only flow between the through hole 140 and the second flow guide groove 170, so as to further make the path of the current close to the center of the through hole 140 and the polycrystalline raw material, thereby further enhancing the effect of the current on increasing the temperature in the through hole 140, and further reducing the change in the temperature gradient ratio in the direction perpendicular to the axial direction X.

[0048] In some embodiments, please refer to again Figure 1 , the body 100 has a plurality of first flow guide grooves 160, and the plurality of first flow guide grooves 160 are arranged at intervals along the circumferential direction Y of the body 100.

[0049] Wherein, the circumferential direction Y is the direction indicated by the Y arrow in the drawing.

[0050] Specifically, the number of the first flow guide grooves 160 can be any one of 2, 3, 4, 5, 6, 7, 8, 9, 10. It can be understood that the more the number of the first flow guide grooves 160, the more uniform the temperature of the thermal field in the through hole 140 in the circumferential direction Y, and the better the quality of the single crystal produced by the polycrystalline raw material.

[0051] In some embodiments, please refer to again Figure 1 , the body 100 has a plurality of second flow guide grooves 170; along the circumferential direction Y, at least one second flow guide groove 170 is located between two adjacent first flow guide grooves 160.

[0052] Specifically, the number of the second flow guide grooves 170 can be any one of 2, 3, 4, 5, 6, 7, 8, 9, 10. In some embodiments, the number of the second flow guide grooves 170 is one more than the number of the first flow guide grooves 160. It can be understood that the more the number of the first flow guide grooves 160, the more uniform the temperature of the thermal field in the through hole 140 in the circumferential direction Y, and the better the quality of the single crystal produced by the polycrystalline raw material. In addition, the more the number of the second flow guide grooves 170, the smaller the mass of the heating device and the lighter the weight.

[0053] In some embodiments, please refer to again Figure 1 and Figure 7, the first diversion groove 160 has a first groove wall 161, a second groove wall 162 and a third groove wall 163. The first groove wall 161 and the second groove wall 162 are oppositely arranged along the circumferential direction Y and are respectively connected to the hole wall 141 of the through hole 140. The third groove wall 163 is located between the first groove wall 161 and the second groove wall 162 along the circumferential direction Y and is respectively connected to the first groove wall 161 and the second groove wall 162. The second diversion groove 170 has a fourth groove wall 171, a fifth groove wall 172 and a sixth groove wall 173. The fourth groove wall 171 and the fifth groove wall 172 are oppositely arranged along the circumferential direction Y and are respectively connected to the first side surface 130. The sixth groove wall 173 is located between the fourth groove wall 171 and the fifth groove wall 172 along the circumferential direction Y and is respectively connected to the fourth groove wall 171 and the fifth groove wall 172. Along the direction perpendicular to the axial direction X, the first groove wall 161 has a minimum distance L1, the fourth groove wall 171 has a minimum distance L2, and the minimum distance L3 exists between the hole wall 141 and the first side surface 130, satisfying: L1 + L2 > L3.

[0054] In some embodiments, the sixth groove wall 173 is an arc surface, that is, the fourth groove wall 171 and the fifth groove wall 172 are connected by an arc surface.

[0055] Specifically, a part of the second diversion groove 170 is located on the side closer to the through hole 140 of the connection line of the ends of the adjacent first diversion grooves 160 far from the through hole 140, so that the path of the current bypassing the second diversion groove 170 is closer to the through hole 140 than the path without bypassing the second diversion groove 170.

[0056] In some embodiments, the heating device is a disc-shaped coil, the through hole 140 is a circular through hole, the first diversion groove 160 extends radially, and the sum of the radial lengths of the first diversion groove 160 and the second diversion groove 170 is greater than the radius of the heating device, that is, the minimum distance between the second diversion groove 170 and the central axis of the through hole 140 in the radial direction is less than the maximum distance between the first diversion groove 160 and the central axis of the through hole 140 in the radial direction, so that the second diversion groove 170 can make the current path close to the through hole 140.

[0057] In the above embodiments, by restricting the positional relationship among the hole wall 141, the third groove wall 163 and the sixth groove wall 173, the path of the current bypassing the second diversion groove 170 can be closer to the through hole 140, so that the temperature at the center of the polycrystalline raw material located in the through hole 140 is higher, avoiding the solidification of the molten zone at the center of the polycrystalline raw material, and making the quality of the single crystal manufactured by this heating device better.

[0058] In some embodiments, please refer to Figure 1, the second diversion groove 170 forms an opening 131 on the first side surface 130, and along the direction from the through hole 140 to the opening 131, the distance between the fourth groove wall 171 and the fifth groove wall 172 increases in the circumferential direction Y of the body 100.

[0059] Specifically, please refer to Figure 7 , the distance between the fourth groove wall 171 and the fifth groove wall 172 in the circumferential direction Y of the body 100 is d, and it can be seen that d gradually increases along the direction from the through hole 140 towards the opening 131.

[0060] In some embodiments, the heating device is a disc-shaped coil, and the direction from the through hole 140 to the opening 131 is the radial direction of the heating device.

[0061] The distance between the fourth groove wall 171 and the fifth groove wall 172 increases in the circumferential direction Y, that is, the distance between the fourth groove wall 171 and the fifth groove wall 172 at one end close to the through hole 140 is smaller, and the distance between them at one end far from the through hole 140 is larger.

[0062] In some embodiments where the heating device is a disc-shaped coil, the shape of the projection of the second diversion groove 170 on the first surface 110 along the axial direction X is a sector.

[0063] In the above embodiments, by making the distance between the fourth groove wall 171 and the fifth groove wall 172 gradually increase in the direction away from the through hole 140, the size of the second diversion groove 170 is further increased, thereby further reducing the mass of the heating device and lightening the weight of the heating device.

[0064] In some embodiments, please refer to again Figure 1 , the body 100 further has a through groove 150, the through groove 150 penetrates through the first surface 110 and the second surface 120, the through groove 150 also penetrates through the first side surface 130, the through groove 150 is communicated with the through hole 140, the through groove 150 is arranged at intervals along the circumferential direction Y from the first diversion groove 160, and the through groove 150 is used to guide the current to surround the through hole 140; the body 100 has a plurality of second diversion grooves 170, and at least one second diversion groove 170 is located between the through groove 150 and the first diversion groove 160 along the circumferential direction Y.

[0065] In some embodiments, the body 100 includes a plurality of first diversion grooves 160, the through groove 150 is located between two first diversion grooves 160 along the circumferential direction Y, at least one second diversion groove 170 is located between one of the two first diversion grooves 160 and the through groove 150 along the circumferential direction Y, and at least one second diversion groove 170 is located between the other and the through groove 150 along the circumferential direction Y.

[0066] Specifically, the through groove 150 is used to enable the path of the current to flow from one side of the circumferential direction Y of the through groove 150 around the through hole 140 to the other side, so that the current can make the thermal field in the through hole 140 more uniform in the circumferential direction Y.

[0067] In the above embodiment, the second diversion groove 170 located between the through groove 150 and the first diversion groove 160 and the second diversion grooves 170 located between other adjacent first diversion grooves 160 can make the thermal field in the through hole 140 more uniform in the circumferential direction Y, so as to further reduce the change of the temperature gradient ratio of the thermal field in the through hole 140 in the circumferential direction Y.

[0068] In some embodiments, please refer back to Figure 1 , the second diversion groove 170 also penetrates the second surface 120.

[0069] It can be understood that making the second diversion groove 170 penetrate the second surface 120 further increases the size of the second diversion groove 170 in the axial direction X, thereby further reducing the mass of the heating device and reducing the weight of the heating device.

[0070] Please refer to Figure 6 , the dotted line in the figure is the interface between the molten zone and the solid state in the optional embodiment of the present application. Above the dotted line is the molten zone, and below the dotted line is the solid single crystal.

[0071] In some embodiments, please refer to Figure 3 、 Figure 4 、 Figure 5 and Figure 6 , the heating device further includes a protrusion 200, and the protrusion 200 is connected to the second surface 120.

[0072] In the above embodiment, according to the skin effect of the current, the protrusion 200 can make the thermal field of the heating device move in the axial direction X towards the direction of the solid single crystal, so that the edge of the interface between the molten zone and the solid state moves towards the direction of the solid single crystal, that is, part of the original solid single crystal is converted into a molten state, thereby reducing the stress generated by the volume expansion of the single crystal when it changes from the molten state to the solid state earlier, and further reducing the possibility of semiconductor single crystal cracking. In addition, please refer to Figure 6 It can be seen that due to the setting of the protrusion 200, in the direction perpendicular to the axial direction X, the thermal field is more uniform and the quality of the produced single crystal is better.

[0073] In some embodiments, please refer back to Figure 3 , the heating device includes a plurality of protrusions 200, and the plurality of protrusions 200 are arranged at intervals in the circumferential direction Y of the body 100.

[0074] In some embodiments, a plurality of protrusions 200 are disposed around the polycrystalline raw material. Specifically, the number of the protrusions 200 can be any one of 1, 2, 3, 4, 5, 6, 7, 8, and 9.

[0075] In the above embodiment, by providing a plurality of protrusions 200 disposed around the polycrystalline raw material, the temperature of the polycrystalline raw material in the circumferential direction Y is made more uniform, reducing the risk of single crystal cracking. In addition, the presence of the second diversion groove 170 can also reduce the impact of the protrusions 200 on the weight of the heating device.

[0076] In some embodiments, referring again to Figure 3 , the protrusion 200 includes a third surface 210 and a fourth surface 220 facing away from each other in the axial direction X, the third surface 210 is connected to the fourth surface 220, and the protrusion 200 further includes a second side surface 230, and the second side surface 230 is connected to the first side surface 130.

[0077] It can be understood that the size of the polycrystalline raw material on the side of the heating device where the protrusion 200 is located gradually increases in the direction perpendicular to the axial direction X. In the above embodiment, by connecting the second side surface 230 of the protrusion 200 to the first side surface 130, the protrusion 200 is made close to the edge of the heating device, avoiding the protrusion 200 from touching the polycrystalline raw material.

[0078] In some embodiments, referring again to Figure 3 , the protrusion 200 further includes a third side surface 240 and a fourth side surface 250, the third side surface 240 and the fourth side surface 250 are disposed opposite to each other in the circumferential direction Y of the main body 100, the third side surface 240 is located between the third surface 210 and the fourth surface 220 in the axial direction X and is respectively connected to the third surface 210 and the fourth surface 220, the fourth side surface 250 is located between the third surface 210 and the fourth surface 220 in the axial direction X and is respectively connected to the third surface 210 and the fourth surface 220; the second side surface 230 is located between the third side surface 240 and the fourth side surface 250 in the circumferential direction Y and is respectively connected to the third side surface 240 and the fourth side surface 250; along the direction from the hole wall 141 of the through hole 140 to the first side surface 130, the distance between the third side surface 240 and the fourth side surface 250 in the circumferential direction Y increases.

[0079] Specifically, referring to Figure 7 , the distance between the third side surface 240 and the fourth side surface 250 in the circumferential direction Y is D, and it can be seen that D gradually increases along the direction from the hole wall 141 of the through hole 140 towards the first side surface 130.

[0080] In the above embodiments, in the direction from the hole wall 141 to the first side surface 130, the distance in the circumferential direction Y between the third side surface 240 and the fourth side surface 250 increases, so as to enlarge the size of the feeding expansion protrusion 200 on the premise of avoiding touching the polycrystalline raw material, making the thermal field generated by the heating device closer to the solid single crystal region, so that the effect of the protrusion 200 on changing the solid-liquid interface of the molten zone is better, further reducing the change in the temperature gradient ratio of the polycrystalline raw material in the direction perpendicular to the axial direction X, and further reducing the possibility of single crystal cracking.

[0081] In some embodiments, please refer to again Figure 3 and Figure 5 , in the axial direction X, the orthographic projection of the groove wall of the second diversion groove 170 on the plane where the second surface 120 is located is located within the orthographic projection of the protrusion 200 on the plane where the second surface 120 is located.

[0082] In some embodiments, the third surface 210 of the protrusion 200 is the bottom wall of the second diversion groove 170 in the axial direction X.

[0083] In some embodiments, the number of the second diversion grooves 170 is equal to that of the protrusions 200.

[0084] In the above embodiments, in the axial direction X, the orthographic projection of the groove wall of the second diversion groove 170 on the plane where the second surface 120 is located is located within the orthographic projection of the protrusion 200 on the plane where the second surface 120 is located, which can make the size of the protrusion 200 as large as possible, so that the effect of the protrusion 200 on changing the solid-liquid interface of the molten zone is better, further reducing the change in the temperature gradient ratio of the polycrystalline raw material in the direction perpendicular to the axial direction X, and further reducing the possibility of single crystal cracking.

[0085] It can be understood that in some embodiments, a cooling water pipe is further arranged in the heating device around the through hole 140, and the cooling water pipe needs to be bent in the direction perpendicular to the axial direction X to avoid the second diversion groove 170 and the first diversion groove 160.

[0086] In the above embodiments, by making the orthographic projection of the groove wall of the second diversion groove 170 on the plane where the second surface 120 is located be located within the orthographic projection of the protrusion 200 on the plane where the second surface 120 is located. In other words, the protrusion 200 fills the vacancy generated by the second diversion groove 170 in the circumferential direction Y of the heating device, so that when the cooling water pipe avoids the second diversion groove 170, it only needs to bend along the axial direction X and enter the inside of the protrusion 200 to complete the avoidance of the second diversion groove 170, with a smaller bending degree and lower layout difficulty of the cooling water pipe.

[0087] Correspondingly, the present application further provides a single crystal manufacturing apparatus, including a heating device as described in any one of the above embodiments. Since the heating device can make the thermal field of the polycrystalline raw material located in the through hole 140 more uniform, the possibility of cracking of the single crystal manufactured by the single crystal manufacturing apparatus is lower and the quality is better.

[0088] The above has introduced in detail a heating device and a single crystal manufacturing apparatus provided by the embodiments of the present application. Specific examples are used in the present application to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A heating device for heating polycrystals, characterized in that, Comprising a body (100), the body (100) having a first surface (110), a second surface (120) and a first side surface (130), the first surface (110) and the second surface (120) facing away from each other along the axial direction (X) of the body (100), the first side surface (130) being located between the first surface (110) and the second surface (120) and connecting the first surface (110) and the second surface (120) respectively; The body (100) further has a through hole (140), a first flow guiding groove (160) and a second flow guiding groove (170); The through hole (140) penetrates through the first surface (110) and the second surface (120); the body (100) can receive an electric current and heat the polycrystal passing through the through hole (140); The first flow guiding groove (160) penetrates through the first surface (110) and the second surface (120), and the first flow guiding groove (160) communicates with the through hole (140), and the first flow guiding groove (160) is used for guiding the electric current in a direction away from the polycrystal to reduce the edge temperature of the polycrystal; The second flow guiding groove (170) penetrates at least the first surface (110), and the second flow guiding groove (170) also penetrates the first side surface (130); the second flow guiding groove (170) is arranged at an interval from the first flow guiding groove (160) along the circumferential direction (Y) of the body (100), and the second flow guiding groove (170) is arranged at an interval from the through hole (140); the second flow guiding groove (170) is used for guiding the electric current away from the polycrystal towards the through hole (140) to increase the central temperature of the polycrystal.

2. The heating device according to claim 1, wherein The body (100) has a plurality of the first flow guiding grooves (160), and the plurality of the first flow guiding grooves (160) are arranged at intervals along the circumferential direction (Y) of the body (100).

3. The heating device according to claim 2, wherein The body (100) has a plurality of second flow guiding grooves (170); along the circumferential direction (Y), at least one of the second flow guiding grooves (170) is located between two adjacent first flow guiding grooves (160).

4. The heating device according to claim 1, wherein The first flow guiding groove (160) has a first groove wall (161), a second groove wall (162) and a third groove wall (163), the first groove wall (161) and the second groove wall (162) are arranged opposite to each other along the circumferential direction (Y) of the body (100) and are respectively connected to the hole wall (141) of the through hole (140); the third groove wall (163) is located between the first groove wall (161) and the second groove wall (162) along the circumferential direction (Y) and connects the first groove wall (161) and the second groove wall (162) respectively; The second flow guiding groove (170) has a fourth groove wall (171), a fifth groove wall (172) and a sixth groove wall (173). The fourth groove wall (171) and the fifth groove wall (172) are oppositely arranged along the circumferential direction (Y) and are respectively connected to the first side surface (130). The sixth groove wall (173) is located between the fourth groove wall (171) and the fifth groove wall (172) along the circumferential direction (Y) and is respectively connected to the fourth groove wall (171) and the fifth groove wall (172). Along the direction perpendicular to the axial direction (X), the first groove wall (161) has a minimum distance L1, the fourth groove wall (171) has a minimum distance L2, and there is a minimum distance L3 between the hole wall (141) and the first side surface (130), satisfying: L1 + L2 > L3.

5. The heating device according to claim 4, characterized in that, The second flow guiding groove (170) forms an opening (131) on the first side surface (130). Along the direction from the through hole (140) to the opening (131), the distance between the fourth groove wall (171) and the fifth groove wall (172) along the circumferential direction (Y) increases.

6. The heating device according to claim 2, wherein The body (100) further has a through groove (150). The through groove (150) penetrates through the first surface (110) and the second surface (120), and the through groove (150) also penetrates through the first side surface (130). The through groove (150) is communicated with the through hole (140). The through groove (150) is arranged at intervals from the first flow guiding groove (160) along the circumferential direction (Y). The through groove (150) is used to guide the current to surround the through hole (140). The body (100) has a plurality of the second flow guiding grooves (170). At least one of the second flow guiding grooves (170) is located between the through groove (150) and the first flow guiding groove (160) along the circumferential direction (Y).

7. The heating device according to claim 1, characterized in that, The second flow guiding groove (170) also penetrates through the second surface (120).

8. The heating device according to claim 1, characterized in that, The heating device further includes a protrusion (200). The protrusion (200) is connected to the second surface (120).

9. The heating device according to claim 8, characterized in that, The heating device includes a plurality of the protrusions (200). The plurality of protrusions (200) are arranged at intervals along the circumferential direction (Y).

10. The heating device according to claim 8, characterized in that, The protrusion (200) includes a third surface (210) and a fourth surface (220) that are opposite to each other along the axial direction (X). The third surface (210) is connected to the fourth surface (220). The protrusion (200) further includes a second side surface (230). The second side surface (230) is connected to the first side surface (130).

11. The heating device according to claim 10, characterized in that, The protrusion (200) further includes a third side surface (240) and a fourth side surface (250), the third side surface (240) and the fourth side surface (250) are oppositely arranged along the circumferential direction (Y) of the body (100), the third side surface (240) is located between the third surface (210) and the fourth surface (220) along the axial direction (X) and is respectively connected to the third surface (210) and the fourth surface (220), the fourth side surface (250) is located between the third surface (210) and the fourth surface (220) along the axial direction (X) and is respectively connected to the third surface (210) and the fourth surface (220); the second side surface (230) is located between the third side surface (240) and the fourth side surface (250) along the circumferential direction (Y) and is respectively connected to the third side surface (240) and the fourth side surface (250); along the direction from the through hole (140) to the first side surface (130), the distance between the third side surface (240) and the fourth side surface (250) along the circumferential direction (Y) increases.

12. The heating device according to claim 8, characterized in that, Along the axial direction (X), the orthographic projection of the groove wall of the second flow guiding groove (170) on the plane where the second surface (120) is located is within the orthographic projection of the protrusion (200) on the plane where the second surface (120) is located.

13. A single crystal manufacturing apparatus, characterized in that, It includes the heating device according to any one of the above claims 1-12.

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