Ceramic metal box dam device, LED sealing cavity and LED device

Abstract

The embodiment of the utility model relates to the technical field of ceramic circuit boards, and provides a ceramic metal box dam device, an LED sealing cavity and an LED device. The transition layer is arranged on the ceramic substrate; the metal box dam is arranged on the side, away from the ceramic substrate, of the transition layer; the metal box dam comprises a silicon carbide layer and a metal layer arranged on the outer side of the silicon carbide layer in a surrounding mode. The components of the metal box dam are adjusted, and silicon carbide is added into the metal box dam, so that the thermal expansion coefficient of the metal box dam is reduced, and the stability of the device in a high-temperature application scene is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of ceramic circuit boards, and in particular to a ceramic metal dam device, an LED sealed cavity, and an LED device. Background Art

[0002] At present, some light-emitting diode (LED) devices used in deep ultraviolet band fields such as plant lighting, disinfection light sources, and exposure machines usually require a sealed cavity, which generally uses a ceramic dam or a metal dam.

[0003] Ceramic dams are usually processed by the following methods: powder sintering, laser etching cavity, and cavity welding. Ceramic dams have a low thermal expansion coefficient, but usually also low thermal conductivity, which is not conducive to heat dissipation of devices, while ceramics with high thermal conductivity are often difficult to process into dams.

[0004] Metal dams are usually made by direct current electroplating thick copper, and after developing the circuit through dry film, the required copper pattern is electroplated. The disadvantage of this type of metal dam is that it is difficult to expose and develop the required thickness through the existing dry film, and it is often formed by multi-layer accumulation, resulting in poor verticality of the copper dam, and the process steps are complicated, making it difficult to control the quality of the dam. Utility Model Content

[0005] The present disclosure aims to solve at least one of the problems existing in the prior art and provides a ceramic metal dam device, an LED sealed cavity, and an LED device.

[0006] In one aspect of the present disclosure, a ceramic metal dam device is provided, the ceramic metal dam device comprising:

[0007] Ceramic substrate;

[0008] A transition layer, wherein the transition layer is disposed on the ceramic substrate;

[0009] A metal dam is arranged on a side of the transition layer away from the ceramic substrate; wherein the metal dam comprises a silicon carbide layer and a metal layer arranged outside the silicon carbide layer.

[0010] Optionally, the transition layer is a silicon layer.

[0011] Optionally, the silicon layer has a thickness ranging from 5 μm to 10 μm.

[0012] Optionally, the metal layer is an aluminum layer.

[0013] Optionally, the ceramic substrate is an aluminum nitride ceramic substrate.

[0014] Optionally, the transition layer is formed by an evaporation process.

[0015] Optionally, the silicon carbide layer includes a plurality of silicon carbide particles;

[0016] The plurality of silicon carbide particles are dispersedly arranged in the metal layer; or,

[0017] The plurality of silicon carbide particles are arranged in an array in the metal layer.

[0018] In another aspect of the present disclosure, an LED sealing cavity is provided, and the LED sealing cavity includes the ceramic-metal dam device described above.

[0019] Optionally, the LED sealing cavity is applied to at least one field of plant lighting, disinfection light source, and exposure machine.

[0020] In another aspect of the present disclosure, an LED device is provided, and the LED device includes the LED sealing cavity described above.

[0021] Compared with the prior art, the present disclosure adjusts the composition structure of the metal dam, and a silicon carbide layer is provided in the metal dam, thereby reducing the thermal expansion coefficient of the metal dam and ensuring the stability of the device in high-temperature application scenarios. In addition, since the thermal conductivity of aluminum is about 270 W / (m·K), which is higher than that of the existing high-thermal-conductivity ceramics (the highest is about 240 W / (m·K)), therefore, for the ceramic-metal dam device provided by the present disclosure, by setting the metal layer in the metal dam as an aluminum layer, the thermal conductivity of the dam is ensured, and the thermal conductivity of the dam cavity can reach 250 W / (m·K), which is higher than that of the existing ceramic dam cavity. By providing a transition layer in the ceramic-metal dam device, the low-temperature welding problem between aluminum and ceramics can be effectively solved, and firm welding between aluminum and ceramics can be achieved at about 550 °C at the lowest. Description of the Drawings

[0022] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplary illustrations do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements, unless otherwise stated, and the drawings in the figures do not constitute a proportional limitation.

[0023] Figure 1 It is a schematic structural diagram of a ceramic-metal dam device provided by an embodiment of the present disclosure;

[0024] Figure 2 It is a schematic diagram of a plurality of silicon carbide particles included in the silicon carbide layer dispersedly arranged in the metal layer provided by another embodiment of the present disclosure;

[0025] Figure 3Schematic diagram of a plurality of silicon carbide particles included in a silicon carbide layer provided in another embodiment of the present disclosure arranged in an array in a metal layer. Detailed Embodiment

[0026] To make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the following will elaborate on each embodiment of the present disclosure with reference to the accompanying drawings. However, those of ordinary skill in the art can understand that in each embodiment of the present disclosure, many technical details are presented to help readers better understand the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can still be implemented. The following division of each embodiment is for convenience of description and should not constitute any limitation to the specific implementation manner of the present disclosure. Each embodiment can be combined and cross-referenced with each other on the premise of no contradiction.

[0027] One embodiment of the present disclosure relates to a ceramic-metal dam device, as Figure 1 shown, including a ceramic substrate 210, a transition layer 220, and a metal dam 230.

[0028] The ceramic substrate 210 can be an aluminum nitride ceramic substrate.

[0029] The transition layer 220 is disposed on the ceramic substrate 210. Exemplarily, the transition layer 220 is formed by an evaporation process. The transition layer 220 is a silicon layer. The thickness range of the silicon layer is 5 μm to 10 μm, preferably 10 μm, so that the metal dam 230 can be in full contact with the silicon layer.

[0030] Specifically, this embodiment does not limit the specific temperature conditions of the evaporation process, as long as a transition layer such as a silicon layer is evaporated on the ceramic substrate 210.

[0031] The metal dam 230 is disposed on the side of the transition layer 220 facing away from the ceramic substrate 210. Among them, in combination with Figure 2 and Figure 3 , the metal dam 230 includes a silicon carbide layer 231 and a metal layer 232 surrounding the outside of the silicon carbide layer.

[0032] Exemplarily, the silicon carbide layer 231 includes a plurality of silicon carbide (SiC) particles. The metal layer 232 can be an aluminum (Al) layer. When the transition layer 220 is a silicon layer, silicon carbide particles and aluminum liquid can be first mixed and sintered at a temperature of 660 °C to 700 °C to form an aluminum / silicon carbide composite plate composed of the silicon carbide layer 231 and the metal layer 232, especially the aluminum layer. Then, the aluminum / silicon carbide composite plate is sintered on the silicon layer, and finally, the side of the aluminum / silicon carbide composite plate facing away from the silicon layer is patterned to prepare the metal dam 230.

[0033] When mixing silicon carbide particles with molten aluminum and sintering them into an aluminum / silicon carbide composite plate, to prevent the silicon carbide particles from floating on the molten aluminum, the silicon carbide particles can be made into a silicon carbide block with paraffin. Then, the silicon carbide block and the molten aluminum are mixed and sintered at a temperature of 660°C to 700°C to form an aluminum / silicon carbide composite plate in which an aluminum layer wraps a silicon carbide layer 231. Since the melting point of aluminum is 660°C, aluminum will react with oxygen in the air at too high a temperature, thus increasing the burning loss rate. Therefore, to form molten aluminum and at the same time reduce the burning loss rate, here the silicon carbide block and the molten aluminum are sintered at a temperature of 660°C to 700°C, preferably 660°C, so that the silicon carbide layer 231 and the aluminum layer form a composite structure, and an aluminum / silicon carbide composite plate is prepared. And since the boiling point of paraffin is lower than 660°C, therefore, the aluminum / silicon carbide composite plate does not contain paraffin, but only contains aluminum and silicon carbide.

[0034] When sintering and setting the aluminum / silicon carbide composite plate on the silicon layer, to prevent the aluminum / silicon carbide composite plate and the silicon layer from melting, the temperature should not be too high. At the same time, to prevent the aluminum / silicon carbide composite plate from being unable to be welded to the silicon layer, the temperature should not be too low either. For example, sintering the aluminum / silicon carbide composite plate on the silicon layer can be achieved through the following steps: in a vacuum environment, the aluminum / silicon carbide composite plate is flat-pressed on the silicon layer with a preset pressure and kept warm for a preset duration within a preset temperature range. Among them, the pressure in the vacuum environment is not greater than 10 -4 Pa, preferably 10 -4 Pa, the range of the preset pressure is 5 MPa to 10 MPa, preferably 10 MPa, to effectively prevent the occurrence of virtual soldering. The preset temperature range is 550°C to 620°C, preferably 550°C. The range of the preset duration is 10 hours to 14 hours, preferably 12 hours, to ensure the reaction duration and make the aluminum / silicon carbide composite plate fully welded to the silicon layer.

[0035] When patterning the side of the aluminum / silicon carbide composite plate facing away from the silicon layer, a dry film can be first covered on the side of the aluminum / silicon carbide composite plate facing away from the silicon layer and exposed and developed into a preset pattern. Then, based on the preset pattern, the unprotected part of the aluminum / silicon carbide composite plate is etched with an acidic etching solution, and the residual dry film on the aluminum / silicon carbide composite plate is removed with a stripping solution, thereby preparing the aluminum / silicon carbide composite plate into a metal dam 230. Among them, by etching the aluminum / silicon carbide composite plate with an acidic etching solution, the perpendicularity of the metal dam, especially the aluminum dam, can be effectively ensured, and the process steps are simple.

[0036] Exemplarily, as Figure 2 shown, the multiple silicon carbide particles included in the silicon carbide layer 231 can be dispersedly arranged in the metal layer 232, especially the aluminum layer. Arranged in this way, the mechanical strength of the metal dam can be further enhanced, the thermal performance can be optimized, and the corrosion resistance can be enhanced.

[0037] Exemplarily, as Figure 3 shown, the multiple silicon carbide particles included in the silicon carbide layer 231 can also be arranged in an array in the metal layer 232, especially the aluminum layer. By setting it in this way, the mechanical strength of the metal dam can be further enhanced, the thermal performance can be optimized, and the corrosion resistance can be enhanced.

[0038] Exemplarily, in the metal dam 230, the content of silicon carbide is greater than 30% to reduce the thermal expansion coefficient of the metal dam, making it not easy to expand or contract, and improving its strength and thermal conductivity.

[0039] The ceramic-metal dam device provided by the embodiments of the present disclosure adjusts the composition structure of the metal dam, and a silicon carbide layer is provided in the metal dam, thereby reducing the thermal expansion coefficient of the metal dam and ensuring the stability of the device in high-temperature application scenarios. In addition, since the thermal conductivity of metallic aluminum is about 270 W / (m·K), which is higher than that of existing high-thermal-conductivity ceramics (the highest is about 240 W / (m·K)), therefore, for the ceramic-metal dam device provided by the embodiments of the present disclosure, by setting the metal layer in the metal dam as an aluminum layer, the thermal conductivity of the dam is ensured, so that the thermal conductivity of the dam cavity can reach 250 W / (m·K), which is higher than that of existing ceramic dam cavities. By providing a transition layer in the ceramic-metal dam device, the low-temperature welding problem between aluminum and ceramics can also be effectively solved, and firm welding between aluminum and ceramics can be achieved at about 550 °C at the lowest.

[0040] Experiments prove that the ceramic-metal dam device provided by the embodiments of the present disclosure has good thermal stability, does not fail after being kept at 200 °C for 1000 hours, and there is no decrease in the dam bonding force after 1000 times of thermal cycling between -25 °C and 150 °C.

[0041] Another embodiment of the present disclosure relates to an LED sealing cavity, and the LED sealing cavity includes the ceramic-metal dam device described in the above embodiment.

[0042] Exemplarily, the LED sealing cavity can be applied to fields in the deep ultraviolet band, such as plant lighting, disinfection light sources, exposure machines, and so on.

[0043] Another embodiment of the present disclosure relates to an LED device, and the LED device includes the LED sealing cavity described in the above embodiment.

[0044] Those of ordinary skill in the art can understand that the above embodiments are specific embodiments for implementing the present disclosure, and in actual applications, various changes can be made in form and details without departing from the spirit and scope of the present disclosure.

Claims

1. A ceramic-metal dam device, characterized in that, The ceramic-metal dam device includes: A ceramic substrate; An intermediate layer disposed on the ceramic substrate; A metal dam disposed on a side of the intermediate layer away from the ceramic substrate; wherein the metal dam includes a silicon carbide layer and a metal layer surrounding the outside of the silicon carbide layer.

2. The ceramic-metal dam device according to claim 1, wherein The intermediate layer is a silicon layer.

3. The ceramic-metal dam device according to claim 2, wherein The thickness range of the silicon layer is from 5 μm to 10 μm.

4. The ceramic-metal dam device according to any one of claims 1 to 3, characterized in that The metal layer is an aluminum layer.

5. The ceramic-metal dam device according to any one of claims 1 to 3, characterized in that The ceramic substrate is an aluminum nitride ceramic substrate.

6. The ceramic-metal dam device according to any one of claims 1 to 3, characterized in that The intermediate layer is formed by an evaporation process.

7. The ceramic-metal dam device according to any one of claims 1 to 3, characterized in that, The silicon carbide layer includes a plurality of silicon carbide particles; The plurality of silicon carbide particles are dispersedly disposed in the metal layer; or The plurality of silicon carbide particles are arranged in an array in the metal layer.

8. An LED sealing cavity, characterized in that, The LED sealing cavity includes the ceramic-metal dam device according to any one of claims 1 to 7.

9. The LED sealed cavity according to claim 8, wherein, The LED sealing cavity is applied to at least one of the fields of plant lighting, disinfection light sources, and exposure machines.

10. An LED device, characterized in that, The LED device includes the LED sealing cavity according to claim 8 or 9.

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