Control circuit, power conversion circuit, chip and electronic equipment

Abstract

The embodiment of the utility model provides a control circuit, a power conversion circuit, a chip and electronic equipment, and the control circuit comprises a current generation module which is used for injecting a current into a transistor; the voltage measuring module is used for measuring the conduction voltage drop when the current is injected into the transistor; the substrate voltage control module and / or the grid voltage control module are / is used for adjusting the on resistance of the transistor to a preset value; the substrate voltage control module is connected with the substrate of the transistor and is used for outputting the substrate voltage of the transistor based on the conduction voltage drop; and the grid voltage control module is connected with the grid of the transistor and is used for outputting the grid voltage of the transistor based on the conduction voltage drop. According to one or more embodiments of the invention, the on-resistance of the transistor can be adjusted to a preset value, a constant on-resistance value is obtained, and the power of the transistor is optimized.

Description

Technical Field

[0001] This application relates to the technical field of electronic circuits, and particularly to a control circuit, a power conversion circuit, a chip, and an electronic device. Background Art

[0002] DC-DC power converters have excellent high-frequency switching characteristics, high-efficiency output, and can adapt to a large load range, and are widely used in the electronic field. In portable electronic products, with more complex application scenarios of electronic products, higher requirements are imposed on power management chips. The on-resistance of the power transistor in a DC-DC power converter is an important indicator in the power management chip. In the related art, the substrate of the power transistor is connected to a fixed potential, and the on-resistance of the power transistor deviates due to process variations, resulting in the DC-DC power converter failing to meet the performance requirements. Summary of the Utility Model

[0003] In view of the above problems, embodiments of this application provide a control circuit, a power conversion circuit, a chip, and an electronic device to solve the above technical problems.

[0004] In a first aspect, an embodiment of this application provides a control circuit, including: a current generation module, connected to a transistor, for injecting current into the transistor; a voltage measurement module, connected to the transistor, for measuring the on-voltage drop of the transistor when the current is injected; a substrate voltage control module and / or a gate voltage control module for adjusting the on-resistance of the transistor to a predetermined value; the substrate voltage control module, connected to the substrate of the transistor, for outputting the substrate voltage of the transistor based on the on-voltage drop; the gate voltage control module, connected to the gate of the transistor, for outputting the gate voltage of the transistor based on the on-voltage drop.

[0005] In a second aspect, an embodiment of this application provides a power conversion circuit, including: at least one transistor; the foregoing control circuit for adjusting the on-resistance of the at least one transistor to a predetermined value.

[0006] In a third aspect, an embodiment of this application further provides a chip, including the foregoing control circuit or power conversion circuit.

[0007] In a fourth aspect, an embodiment of this application further provides an electronic device, including the foregoing chip or control circuit or power conversion circuit.

[0008] The control circuit, power conversion circuit, chip and electronic device provided by the embodiments of the present application inject current into a transistor by a current generation module, measure the on-voltage drop of the transistor when the current is injected by a voltage measurement module, and output the substrate voltage of the transistor based on the on-voltage drop by a substrate voltage control module and / or output the gate voltage of the transistor based on the on-voltage drop by a gate voltage control module, which can adjust the on-resistance of the transistor to a predetermined value, obtain a constant on-resistance value, and optimize the power of the transistor.

[0009] These aspects or other aspects of the present application will be more clearly understood in the following description of the embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0011] Figure 1 The block diagram of a control circuit provided by the embodiments of the present application is shown.

[0012] Figure 2 The block diagram of another control circuit provided by the embodiments of the present application is shown.

[0013] Figure 3 The block diagram of yet another control circuit provided by the embodiments of the present application is shown.

[0014] Figure 4 The circuit schematic diagram of a power conversion circuit provided by the embodiments of the present application is shown. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0015] The following details the embodiments of the present application. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary only for explaining the present application and should not be construed as limiting the present application.

[0016] In order to enable those skilled in the art to better understand the solutions of the present application, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, not all of them. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the scope of protection of the present application.

[0017] In the embodiments of the present application, it should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0018] Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0019] In the description of the embodiments of the present application, words such as "example" or "for example" are used to denote exemplification, illustration or description. Any embodiment or design described as "for example" or "exemplarily" in the embodiments of the present application is not construed as being more preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to present relative concepts in a clear manner.

[0020] In addition, "a plurality of" in the embodiments of the present application means two or more. In view of this, "a plurality of" in the embodiments of the present application can also be understood as "at least two". "At least one" can be understood as one or more, for example, understood as one, two or more. For example, including at least one means including one, two or more, and does not limit which ones are included. For example, including at least one of A, B and C, then what can be included are A, B, C, A and B, A and C, B and C, or A and B and C.

[0021] It should be noted that in the embodiments of the present application, "and / or" describes the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / ", unless otherwise specified, generally represents an "or" relationship between the preceding and following associated objects.

[0022] It should be pointed out that "connection" in the embodiments of the present application can be understood as electrical connection. The connection of two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0023] In the embodiments of the present application, the first pole / first end of each transistor is one of the source and the drain, and the second pole / second end of each transistor is the other of the source and the drain. Since the source and the drain of a transistor can be symmetric in structure, there may be no difference between its source and drain in structure. That is to say, there may be no difference between the first pole / first end and the second pole / second end of the transistor in the embodiments of the present application in structure. Exemplarily, when the transistor is a P-type transistor, the first pole / first end of the transistor is the source, and the second pole / second end is the drain; Exemplarily, when the transistor is an N-type transistor, the first pole / first end of the transistor is the drain, and the second pole / second end is the source.

[0024] In the circuit structure provided by the embodiments of the present application, nodes such as the first node and the second node do not represent actually existing components, but represent the convergence points of relevant couplings in the circuit diagram. That is to say, these nodes are nodes equivalent to the convergence points of relevant couplings in the circuit diagram.

[0025] The embodiments of the present application provide a control circuit, which can be applied to a power conversion circuit, especially a DC-DC power conversion circuit.

[0026] As Figure 1 shown, a control circuit 100 provided by the embodiments of the present application may include: a current generation module 101, a voltage measurement module 102, a substrate voltage control module 103, and / or a gate voltage control module 104. The current generation module 101 is connected to the transistor 200 and is used to inject current into the transistor 200. The voltage measurement module 102 is used to measure the on-voltage drop V ON . The substrate voltage control module 103 and / or the gate voltage control module 104 are used to adjust the on-resistance R ON of the transistor 200 to a predetermined value. Among them, the substrate voltage control module 103 is connected to the substrate of the transistor 200 and is used to output the substrate voltage V ON of the transistor 200 based on the on-voltage drop V BULK . The gate voltage control module 104 is connected to the gate of the transistor 200 and is used to output the gate voltage V ON of the transistor 200 based on the on-voltage drop V G . Through the embodiments of the present application, the on-resistance of the transistor can be adjusted to a predetermined value, obtaining a constant on-resistance value and optimizing the transistor power.

[0027] Specifically, in some implementations, the substrate voltage control module 103 outputs the substrate voltage V ON of the transistor 200 based on the on-voltage drop V BULK , and by controlling the substrate voltage V BULKThe difference V between the source voltage V S is used to adjust the on-resistance R of the transistor 200 to a predetermined value. In some implementations, the gate voltage control module 104 outputs the gate voltage V of the transistor 200 based on the on-voltage drop V SB , and by controlling the difference V between the gate voltage V ON of the transistor 200 and the source voltage V ON , the on-resistance R of the transistor 200 is adjusted to a predetermined value. In some implementations, the substrate voltage control module 103 outputs the substrate voltage V of the transistor 200 based on the on-voltage drop V G , and the gate voltage control module 104 outputs the gate voltage V of the transistor 200 based on the on-voltage drop V G . By controlling the difference V between the gate voltage V S of the transistor 200 and the source voltage V GS , as well as the difference V between the substrate voltage V ON and the source voltage V ON , the on-resistance R of the transistor 200 is adjusted to a predetermined value. BULK , the gate voltage control module 104 outputs the gate voltage V of the transistor 200 based on the on-voltage drop V ON , and by controlling the difference V between the gate voltage V G of the transistor 200 and the source voltage V G , as well as the difference V between the substrate voltage V S and the source voltage V GS , the on-resistance R of the transistor 200 is adjusted to a predetermined value. BULK and the source voltage V S , the on-resistance R of the transistor 200 is adjusted to a predetermined value. GS , the on-resistance R of the transistor 200 is adjusted to a predetermined value. ON

[0028] Furthermore, the source voltage V of the transistor 200 S is generally a fixed voltage, such as the power supply voltage. Therefore, by controlling the gate voltage V of the transistor 200 G , the difference V between the gate voltage V G and the source voltage V S can be controlled. By controlling the substrate voltage V of the transistor 200 GS , the difference V between the substrate voltage V BULK and the source voltage V BULK can be controlled. S SB

[0029] Exemplarily, the transistor 200 may include a MOS transistor (MOSFET, Metal Oxide Semiconductor Field Effect Transistor). The on-voltage drop of the MOS transistor is the voltage difference between the drain (D) and the source (S), and the on-voltage drop can be expressed as V DS(ON) . For a PMOS transistor, the current generation module 101 can inject current into the source of the PMOS transistor; for an NMOS transistor, the current generation module 101 can inject current into the drain of the NMOS transistor.

[0030] ​​​Taking the MOS transistor as an example, the adjustment of the on-resistance of the MOS transistor by adjusting the substrate voltage of the MOS transistor will be described below.

[0031] The drain-source voltage V of the MOS transistor DS <<2(V GS -V TH ) When it operates in the linear region, its on-resistance R ON is as shown in Equation (1):

[0032]

[0033] In Equation (1), W represents the channel width of the MOS transistor, L represents the channel length of the MOS transistor, V GS represents the gate-source voltage of the MOS transistor, V TH represents the on-threshold voltage of the MOS transistor, C OX represents the oxide capacitance value of the MOS transistor, and μ0 represents the carrier mobility.

[0034] Introducing the body bias effect, the on-threshold voltage V TH is:

[0035]

[0036] In Equation (3), is the body effect coefficient, ε si is the dielectric constant of silicon, V SB is the potential difference between the source and the substrate, represents the voltage value of the difference in work function between polysilicon and the silicon substrate, q is the electron charge, N sub is the doping concentration of the substrate, Q dep is the charge in the depletion region.

[0037] Rearranging R on , we get:

[0038]

[0039] It can be seen from Equation (4) that the on-resistance R SB can be adjusted by adjusting the potential difference V GS between the source and the substrate and the potential difference V ON . As described above, in the embodiments of the present application, by controlling the difference V G between the gate voltage V S and the source voltage V GS and the difference V BULK between the substrate voltage V S and the source voltage V SB at least one of them adjusts the on-resistance R ON to a predetermined value.

[0040] Figure 2 shows a structural block diagram of another control circuit provided by an embodiment of the present application. As Figure 2 shown, the control circuit 300 may include a current generation module 301, a voltage measurement module 302, a substrate voltage control module 303, and / or a gate voltage control module 304. The current generation module 301 is used to inject current into the transistor 200. The voltage measurement module 302 is used to measure the on-voltage drop V ON of the transistor 200 when the current is injected. ON The substrate voltage control module 303 is used to output the substrate voltage V BULK of the transistor 200 based on the on-voltage drop V ON to adjust the on-resistance R ON of the transistor 200 to a predetermined value. The gate voltage control module 304, connected to the gate of the transistor 200, is used to output the gate voltage V G of the transistor 200 based on the on-voltage drop V

[0041] As an implementation manner, as Figure 2 shown, the voltage measurement module 302 may include an analog-to-digital conversion unit 3021, which is used to perform analog-to-digital conversion on the on-voltage drop of the transistor 200 to obtain a corresponding first digital code value D1. The substrate voltage control module 303 may include: a logic unit 3031, which is used to determine a second digital code value D2 corresponding to the first digital code value D1 based on the corresponding relationship between the on-voltage drop and the substrate voltage; a digital-to-analog conversion unit 3032, which is used to perform digital-to-analog conversion on the second digital code value D2 and output the corresponding substrate voltage V BULK . Exemplarily, the logic unit 3031 may include a microcontroller or the like.

[0042] As an implementation manner, as Figure 2 shown, the substrate voltage control module 303 may further include: a first storage unit 3033, which is used to store the second digital code value D2. The digital-to-analog conversion unit 3032 is used to perform digital-to-analog conversion on the second digital code value D2 stored in the first storage unit 3033 and output the corresponding substrate voltage V BULK .

[0043] As an implementation manner, as Figure 2 shown, the gate voltage control module 304 may include: a drive control unit 3041 and a gate driver 3042. The drive control unit 3041 is connected to the voltage measurement module 302 and is used to output a drive signal corresponding to the on-voltage drop V ON . The gate driver 3042 is connected to the drive control unit 3041 and is used to output a gate voltage V GFurther, the drive control unit 3041 may be a logic unit configured to determine a third digital code value D3 corresponding to the first digital code value D1 based on the correspondence between the on-state voltage drop and the gate voltage; the gate driver 3042 may be a digital-to-analog conversion unit configured to perform digital-to-analog conversion on the third digital code value D3 and output a corresponding gate voltage.

[0044] As an implementation, as Figure 2 shown, the control circuit 300 may further include a switch module 305 connected between the transistor 200 and the current generation module 301, and the current generation module 301 injects current into the transistor 200 when the switch module 305 is turned on.

[0045] Exemplarily, referring to Figure 2 shown, in the measurement stage, the switch module 305 is turned on, and the current generation module 301 injects current into the transistor 200. In this case, the voltage measurement module 302 measures the on-state voltage drop V ON of the transistor 200, and converts the on-state voltage drop V ON into a first digital code value D1.

[0046] If the on-resistance is controlled by the substrate voltage V BULK , the logic unit 3031 determines a second digital code value D2 corresponding to the first digital code value D1 based on the correspondence between the on-state voltage drop and the substrate voltage. The first storage unit 3033 stores the second digital code value D2. In the control stage, the switch module 305 is turned off, and the digital-to-analog conversion unit 3032 performs digital-to-analog conversion on the second digital code value D2 stored in the first storage unit 3033 and outputs a corresponding substrate voltage V BULK .

[0047] If the on-resistance is controlled by the gate voltage V G , the drive control unit 3041 may determine a drive signal corresponding to the first digital code value D1 based on the correspondence between the on-state voltage drop and the gate voltage V G , and the gate driver 3042 outputs a corresponding gate voltage V G based on the drive signal.

[0048] If the on-resistance is controlled by the substrate voltage V BULK and the gate voltage V G , then the substrate voltage control module 303 outputs the substrate voltage V ON of the transistor 200 based on the on-state voltage drop V BULK , and the gate voltage control module 304 outputs the gate voltage V ON of the transistor 200 based on the on-state voltage drop V G .

[0049] Figure 3 shows a structural block diagram of another control circuit provided by an embodiment of the present application. As Figure 3 shown, the control circuit 400 may include: a current generation module 401, a voltage measurement module 402, a substrate voltage control module 403, and / or a gate voltage control module 404. The current generation module 401 is configured to inject current into the transistor 200. The voltage measurement module 402 is configured to measure the on-state voltage drop V ON ; when the transistor 200 is injected with this current. The substrate voltage control module 403 is configured to output the substrate voltage V ON of the transistor 200 based on the on-state voltage drop V BULK so as to adjust the on-resistance R ON of the transistor 200 to a predetermined value. The gate voltage control module 404, connected to the gate of the transistor 200, is configured to output the gate voltage V ON of the transistor 200 based on the on-state voltage drop V G .

[0050] As Figure 3 shown, the voltage measurement module 402 may include: an analog-to-digital conversion unit 4021, configured to perform analog-to-digital conversion on the on-state voltage drop of the transistor 200 to obtain a corresponding digital code value. The substrate voltage control module 403 may include: a voltage division unit 4031, configured to output a voltage according to a voltage division ratio; a control unit 4032, configured to adjust the voltage division ratio of the voltage division unit 4031 based on the digital code value so that the voltage division unit 4031 outputs a substrate voltage corresponding to the on-state voltage drop. Exemplarily, the voltage division unit 4031 may include a programmable voltage division resistor network, and its resistance value can be adjusted by the digital code value.

[0051] As an implementation manner, as Figure 3 shown, the substrate voltage control module 403 may further include: a second storage unit 4033, configured to store the digital code value output by the analog-to-digital conversion unit 4021. The control unit 4032 is configured to adjust the voltage division ratio of the voltage division unit 4031 according to the digital code value stored in the second storage unit 4033.

[0052] As an implementation manner, as Figure 3 shown, the gate voltage control module 404 may include: a drive control unit 4041 and a gate driver 4042. The drive control unit 4041 is connected to the voltage measurement module 402 and is configured to output a drive signal corresponding to the on-state voltage drop V ON . The gate driver 4042 is connected to the drive control unit 4041 and is configured to output a gate voltage V G corresponding to the drive signal.Exemplarily, the gate driver 4042 can be a voltage dividing unit, which is used to output a corresponding voltage according to a voltage division ratio, and can include a programmable voltage dividing resistor network, whose resistance value can be adjusted by a digital code value. The drive control unit 4041 can be a control unit, which is used to adjust the voltage division ratio of the voltage dividing unit based on the digital code value output by the analog-to-digital conversion unit 4021, so that the voltage dividing unit outputs a gate voltage corresponding to the on-voltage drop.

[0053] As an implementation manner, as Figure 3 shown, the control circuit 400 can further include a switch module 405. The switch module 405 is connected between the transistor 200 and the current generation module 401, and the current generation module 401 injects current into the transistor 200 when the switch module 405 is turned on.

[0054] Exemplarily, referring to Figure 3 shown, in the measurement stage, the switch module 405 is turned on, and the current generation module 401 injects current into the transistor 200. In this case, the voltage measurement module 402 measures the on-voltage drop V ON of the transistor 200, and converts the on-voltage drop V ON into a digital code value. The second storage unit 4033 stores the digital code value output by the analog-to-digital conversion unit 4021. In the control stage, the switch module 405 is turned off, and the control unit 4032 adjusts the voltage division ratio of the voltage dividing unit 4031 based on the digital code value stored in the second storage unit 4033. The voltage dividing unit 4031 outputs a substrate voltage corresponding to the on-voltage drop based on this voltage division ratio.

[0055] The embodiment of the present application further provides a power conversion circuit, which can be a DC-DC power conversion circuit, including at least one transistor, and the control circuit of the embodiment of the present application is used to adjust the on-resistance of at least one transistor to a predetermined value.

[0056] Figure 4 shows a circuit schematic diagram of a power conversion circuit provided by the embodiment of the present application. As Figure 4 shown, the power conversion circuit 500 can include a power conversion module and a control circuit. The power conversion module can include MOS transistor M1 and MOS transistor M2, and MOS transistor M1 and MOS transistor M2 are power transistors of the power conversion module. The control circuit adjusts the on-resistances of MOS transistor M1 and MOS transistor M2 to a predetermined value by controlling the gate voltage and / or substrate voltage of MOS transistor M1 and MOS transistor M2.

[0057] Referring to Figure 4As shown, the control circuit may include a current source Isource, a first switch S1, a current source Isink, a second switch S2, a first voltage measurement module 501, a second voltage measurement module 502, a first substrate voltage control module 511, a second substrate voltage control module 512, and a gate voltage control module.

[0058] Reference Figure 4 As shown, the source of MOS transistor M1 is grounded, the drain is connected to one end of the current source Isource and the inductor L, the first switch S1 is connected between the drain of MOS transistor M1 and the current source Isource, and the other end of the inductor L is connected to the power supply terminal VDDA. When the first switch S1 is turned on, the current source Isource can inject current into the MOS transistor M1, the conduction current of the MOS transistor M1 is the current of the current source Isource, and the first voltage measurement module 501 can measure the drain voltage of the MOS transistor M1. The first substrate voltage control module 511 can control the substrate voltage of the MOS transistor M1 based on the measurement result of the first voltage measurement module 501.

[0059] Reference Figure 4 As shown, the drain of MOS transistor M2 is connected to the source of MOS transistor M1 and the inductor L, and the source of MOS transistor M2 is connected to the current source Isink. The second switch S2 is connected between the source of MOS transistor M2 and the current source Isink. When the second switch S2 is turned on, the current source Isink can pull current from the MOS transistor M2, and the second voltage measurement module 502 can measure the drain voltage and source voltage of the MOS transistor M2. The second substrate voltage control module 512 can control the substrate voltage of the MOS transistor M2 based on the measurement result of the second voltage measurement module 502.

[0060] When measuring the threshold voltage of MOS transistor M1, the first switch S1 is turned on, the current source Isource injects current into the MOS transistor M1, the current passes through the MOS transistor M1, and the first voltage measurement module 501 detects it, indirectly obtaining the RON value of the MOS transistor M1, and then adjusting the substrate voltage to adjust the RON value of the MOS transistor M1. When adjusting the RON of MOS transistor M2, the second switch S2 is turned on, the current source Isink pulls current from the MOS transistor M2, the second voltage measurement module 502 detects it, indirectly obtaining the RON value of MOS transistor M1, and then adjusting the substrate voltage, and then adjusting the substrate voltage again.

[0061] In some possible implementation manners, the gate voltage control module may control the gate voltages of the MOS transistor M1 and the MOS transistor M2 based on the measurement results of the first voltage measurement module and the second voltage measurement module. As described above, the on-resistances of the MOS transistor M1 and the MOS transistor M2 can be adjusted by controlling their gate voltages and / or substrate voltages. Reference Figure 4As shown, the gate voltage control module may include a drive control unit 521 and a gate driver 522. The drive control unit 521 is connected to the first voltage measurement module 501 and the second voltage measurement module 502; the gate driver 522 is connected to the gates of the MOS transistors M1 and M2. The drive control unit 521 can output a drive signal corresponding to the turn-on voltage, and the gate driver 22 outputs a gate voltage according to this drive signal.

[0062] In some possible implementation manners, referring to Figure 4 As shown, the power conversion module in Boost peak current mode may further include: a voltage sampling circuit 531, an error amplifier 532, a slope compensation circuit 533, a PWM (Pulse Width Modulation) generator 534, and a drive logic 535. The following will describe these module circuits and their working methods in detail.

[0063] The voltage sampling circuit 531 is used to obtain the real-time value of the output voltage of the power conversion module and convert it into a voltage signal suitable for processing by the error amplifier 532. The voltage sampling circuit 531 can be implemented by a resistor voltage division network to reduce the output voltage to a range suitable for processing by the error amplifier 532 and provide it to the error amplifier 532. Referring to Figure 4 As shown, the voltage sampling circuit 531 may include a first resistor R1 and a second resistor R2. The first resistor R1 and the second resistor R2 are connected in series between the output node of the power conversion module and the power ground, and the node between the first resistor R1 and the second resistor R2 is connected to the error amplifier.

[0064] The error amplifier 532 is used to compare the sampled value of the output voltage with the reference voltage and generate an error signal. This error signal reflects the difference between the current output voltage and the desired output voltage and is used to adjust the duty cycle of the PWM signal to control the output voltage. The inputs of the error amplifier 532 are the output voltage sampled value of the voltage sampling circuit 531 and a reference voltage VREF. By comparing these two voltages and amplifying the difference between them, the error signal is output. The error signal is then used in the control of the PWM generator 534. Referring to Figure 4 As shown, the output voltage sampled value is generated by the node between the first resistor R1 and the second resistor R2.

[0065] In peak current mode control, when the duty cycle (i.e., the conduction time ratio of the PWM signal) is large (usually greater than 0.5), the system may become unstable and exhibit subharmonic oscillations. Ramp compensation is a technique used to improve system stability. It prevents such oscillations by adding a ramp signal related to the duty cycle to the current detection signal. The ramp compensation circuit 533 dynamically adjusts the slope of the compensation ramp according to the duty cycle of the PWM signal, ensuring that the current detection signal maintains the correct waveform within the switching cycle, thereby avoiding system instability.

[0066] The PWM generator 534 generates a PWM signal based on the error signal and the current detection signal (in peak current control mode), controlling the conduction and turn-off of the switching transistor, thereby regulating the output voltage of the power conversion module. In peak current mode control, the PWM generator 534 may include a comparator that compares the current detection signal (possibly after ramp compensation) with the error signal. When the current detection signal reaches or exceeds the error signal, the output of the comparator flips, causing a change in the duty cycle of the PWM signal. This process is repeated within each switching cycle to achieve precise control of the output voltage.

[0067] For further reference Figure 4 As shown, the drive logic 535 controls the gate driver 512 based on the PWM signal output by the PWM generator 534, enabling the gate driver 512 to generate a gate voltage according to the duty cycle of the PWM signal. The drive control unit 511 controls the magnitude of the gate voltage of the gate driver 512, and the drive logic 535 controls whether to output the gate voltage.

[0068] The embodiment of this application also provides a chip, which includes the above control circuit or power conversion circuit. A chip is also called an integrated circuit (IC). This chip can be, but is not limited to, a SOC (System on Chip) chip, a SIP (system in package) chip. The chip injects current into the transistor by the current generation module, measures the on-state voltage drop of the transistor when this current is injected by the voltage measurement module, and the substrate voltage control module outputs the substrate voltage of the transistor based on this on-state voltage drop, and / or the gate voltage control module outputs the gate voltage of the transistor based on this on-state voltage drop, capable of adjusting the on-resistance of the transistor to a predetermined value, obtaining a constant on-resistance value, and optimizing the transistor power.

[0069] An embodiment of the present application further provides an electronic device, which includes a device main body and a chip, a control circuit or a power conversion circuit as described above disposed in the device main body. The electronic device may be, but is not limited to, a weighing scale, a body fat scale, a nutrition scale, an infrared electronic thermometer, a pulse oximeter, a body composition analyzer, a mobile power supply, a wireless charger, a fast charger, a vehicle charger, an adapter, a display, a USB (Universal Serial Bus) expansion dock, a stylus, true wireless earphones, an in-vehicle central control screen, an automobile, a smart wearable device, a mobile terminal, a smart home device. The smart wearable device includes, but is not limited to, a smart watch, a smart bracelet, and a cervical massager. The mobile terminal includes, but is not limited to, a smart phone, a laptop computer, a tablet computer, and a POS (point of sales terminal) machine. The smart home device includes, but is not limited to, a smart socket, a smart rice cooker, a smart floor sweeper, and a smart light. The electronic device injects current into a transistor by a current generation module, measures the on-voltage drop of the transistor when the current is injected by a voltage measurement module, and outputs the substrate voltage of the transistor based on the on-voltage drop by a substrate voltage control module and / or outputs the gate voltage of the transistor based on the on-voltage drop by a gate voltage control module, and can adjust the on-resistance of the transistor to a predetermined value, obtain a constant on-resistance value, and optimize the transistor power.

[0070] The above are only the preferred embodiments of the present application and do not impose any formal restrictions on the present application. Although the present application has been disclosed above with the preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can make some modifications or equivalent changes and modifications using the above-disclosed technical content within the scope of the technical solution of the present application. However, as long as it does not depart from the content of the technical solution of the present application, any brief modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application still fall within the scope of the technical solution of the present application.

Claims

1. A control circuit, characterized in that, Comprising: A current generating module, connected to the transistor, for injecting current into the transistor; A voltage measuring module, connected to the transistor, for measuring the on-state voltage drop when the transistor is injected with the current; A substrate voltage control module and / or a gate voltage control module for adjusting the on-resistance of the transistor to a predetermined value; The substrate voltage control module, connected to the substrate of the transistor, for outputting the substrate voltage of the transistor based on the on-state voltage drop; The gate voltage control module, connected to the gate of the transistor, for outputting the gate voltage of the transistor based on the on-state voltage drop.

2. The control circuit according to claim 1, wherein Further comprising: A switching module, connected between the current generating module and the transistor, and the current generating module injects current into the transistor when the switching module is turned on.

3. The control circuit according to claim 1, characterized in that The gate voltage control module includes: a drive control unit and a gate driver; The drive control unit, connected to the voltage measuring module, for outputting a drive signal corresponding to the on-state voltage drop; The gate driver, connected to the drive control unit, for outputting the gate voltage according to the drive signal.

4. The control circuit according to claim 1 or 3, wherein The measuring module includes: An analog-to-digital conversion unit for performing analog-to-digital conversion on the on-state voltage drop of the transistor to obtain a corresponding first digital code value; The substrate voltage control module includes: A logic unit for determining a second digital code value corresponding to the first digital code value based on the correspondence between the on-state voltage drop and the substrate voltage; A digital-to-analog conversion unit for performing digital-to-analog conversion on the second digital code value and outputting a corresponding substrate voltage.

5. The control circuit according to claim 4, characterized in that, The substrate voltage control module further includes: a first storage unit for storing the second digital code value; wherein, the digital-to-analog conversion unit is for performing digital-to-analog conversion on the second digital code value stored in the first storage unit and outputting a corresponding substrate voltage.

6. The control circuit according to claim 1 or 3, wherein The voltage measuring module includes: An analog-to-digital conversion unit for performing analog-to-digital conversion on the on-state voltage drop of the transistor to obtain a corresponding digital code value; The substrate voltage control module includes: A voltage dividing unit for outputting a voltage output according to a voltage division ratio; A control unit for adjusting the voltage division ratio of the voltage dividing unit based on the digital code value so that the voltage dividing unit outputs a substrate voltage corresponding to the on-state voltage drop.

7. The control circuit according to claim 6, wherein The substrate voltage control module further includes: a second storage unit for storing the digital code value; the control unit is for adjusting the voltage division ratio of the voltage dividing unit according to the digital code value stored in the second storage unit.

8. A power conversion circuit, characterized in that, Comprising: At least one transistor; The control circuit according to any one of claims 1 to 7 above, for adjusting the on-resistance of the at least one transistor to a predetermined value.

9. A chip, characterized in that, Comprising the control circuit according to any one of claims 1 to 7 above or the power conversion circuit according to claim 8.

10. An electronic device, characterized in that, Comprising an equipment main body and the chip according to claim 9 above provided on the equipment main body.

Images