Mask and semiconductor device

Abstract

The utility model provides a mask plate and a semiconductor device. The mask comprises a functional area, a mask layer and a mask layer, wherein a functional pattern is arranged in the functional area; the monitoring area is arranged on one side of the functional area, and a monitoring pattern and a dummy pattern are arranged in the monitoring area; the ratio of the aperture ratio of the monitoring area to the aperture ratio of the functional area is within a preset range; wherein the aperture ratio is the ratio of the pattern area to the area of the region where the pattern is located.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and particularly relates to a mask and a semiconductor device. Background Art

[0002] In the manufacturing process of semiconductor devices, the design and fabrication of masks are closely related to the quality of the finally formed semiconductor devices. Therefore, in order to improve the quality of semiconductor devices, it is urgent to improve the design of masks. Summary of the Utility Model

[0003] In view of this, the utility model provides a mask and a semiconductor device.

[0004] To achieve the above object, the technical solution of the utility model is realized as follows:

[0005] In a first aspect, the utility model provides a mask, which includes: a functional area, in which a functional pattern is provided; a monitoring area provided on one side of the functional area, in which a monitoring pattern and a dummy pattern are provided; the ratio of the opening rate of the monitoring area to the opening rate of the functional area is within a preset range; wherein, the opening rate is the ratio of the pattern area to the area of the region where the pattern is located.

[0006] In some embodiments, the preset range is 0.9 to 1.1.

[0007] In some embodiments, the opening rate of the monitoring area is the same as the opening rate of the functional area.

[0008] In some embodiments, the mask is divided into a plurality of sub-areas with the same area, and both the functional area and the monitoring area include a plurality of sub-areas; wherein, a functional pattern is provided in each sub-area of the functional area; and a monitoring pattern is provided in at least some sub-areas of the monitoring area.

[0009] In some embodiments, the opening rate of each sub-area of the functional area is the same as the opening rate of the functional area.

[0010] In some embodiments, the dummy pattern is provided in one or more sub-areas of the monitoring area.

[0011] In some embodiments, the dummy pattern is provided in the sub-area of the monitoring area where the monitoring pattern is located; and / or, the dummy pattern is provided in the sub-area of the monitoring area where the monitoring pattern is not located.

[0012] In some embodiments, the graphic shape of the dummy pattern is the same as or different from the graphic shape of the functional pattern.

[0013] In some embodiments, the mask is used in a trimming process.

[0014] In a second aspect, the present utility model provides a semiconductor device, which includes a filter obtained after using the mask as described in the first aspect of the present utility model.

[0015] The present utility model provides a mask and a semiconductor device. In the mask provided by the present utility model, a functional pattern is provided in the functional area, a monitoring pattern and dummy patterns are provided in the monitoring area, and the ratio of the opening rate of the monitoring area to the opening rate of the functional area is within a preset range; thus, by using the above mask, the problem of thickness uniformity of the semiconductor structure caused by the loading effect can be effectively improved, so that the thickness of the semiconductor layer near the monitoring area is the same as that of the semiconductor layer in the normal functional area (i.e., the semiconductor layer far from the monitoring area), the yield of the finally fabricated semiconductor device is improved, the quality and performance of the product are guaranteed, and the productivity is increased. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a partial schematic view of the mask provided by the present utility model;

[0017] Figure 2 is a schematic view of the mask provided by the present utility model;

[0018] Figure 3 In FIG. (a), it is a schematic view in which the opening rate of the monitoring area is much smaller than that of the functional area; Figure 3 In FIG. (b), it is a schematic view of increasing the opening rate of the monitoring area provided by the present utility model;

[0019] Figure 4 In FIG. (a), it is a schematic view in which the opening rate of the monitoring area is much larger than that of the functional area; Figure 4 In FIG. (b), it is a schematic view of decreasing the opening rate of the monitoring area provided by the present utility model;

[0020] Figure 5 In FIG. (a), it is a schematic view of the thickness difference distribution of the semiconductor layer before and after trimming provided by the present utility model; Figure 5 In FIG. (b), it is a schematic view of the thickness difference distribution of the semiconductor layer before and after trimming provided by the related technical solution;

[0021] Figure 6 is a schematic view of the yield comparison of the semiconductor devices provided by the related technical solution and the present utility model. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0022] Next, in combination with the embodiments of the present utility model and the accompanying drawings, the technical solutions in the embodiments of the present utility model will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments in the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.

[0023] In the following description, numerous specific details are given to provide a more thorough understanding of the present utility model. However, it is obvious to those skilled in the art that the present utility model can be implemented without one or more of these details. In other instances, in order to avoid confusion with the present utility model, some well-known technical features are not described; that is, not all features of the actual embodiments are described here, and the well-known functions and structures are not described in detail.

[0024] In the drawings, for clarity, the dimensions of layers, regions, elements, and their relative dimensions may be exaggerated. The same reference numerals throughout the drawings denote the same elements.

[0025] It should be understood that when an element or layer is referred to as "on", "adjacent to", "connected to", or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as "directly on", "directly adjacent to", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Thus, without departing from the teachings of the present utility model, the first element, component, region, layer, or part discussed below may be referred to as the second element, component, region, layer, or part. And when discussing the second element, component, region, layer, or part, it does not indicate that the present utility model necessarily has a first element, component, region, layer, or part.

[0026] Spatial relation terms such as "under", "below", "lower", "beneath", "above", "upper", etc. may be used herein for convenience of description to describe the relationship of one element or feature shown in the figures with other elements or features. It should be understood that, in addition to the orientation shown in the figures, the spatial relation terms are also intended to include different orientations of the device in use and operation. For example, if the device in the drawings is flipped, then an element or feature described as "under other elements" or "beneath them" or "under them" will be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "beneath" can include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are to be interpreted accordingly.

[0027] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present utility model. When used herein, the singular forms of "a", "an" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. When used herein, the term "and / or" includes any and all combinations of the related listed items.

[0028] To fully understand the present utility model, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present utility model. The preferred embodiments of the present utility model are described in detail below. However, in addition to these detailed descriptions, the present utility model may have other embodiments.

[0029] During the manufacturing process of semiconductor devices, lithography can be utilized to form the required patterns, and then pattern the various thin film layers. The lithography process specifically includes the following steps: spin-coating a photoresist on the surface of the semiconductor layer to form a photoresist layer; performing exposure and development on the photoresist layer to open the areas of the semiconductor layer that need to be etched or trimmed. Among them, the semiconductor layer can be any layer in the process of forming semiconductor devices. For example, it can be the bottom layer of the semiconductor device, or the middle layer or the top layer of the semiconductor device. Exemplarily, when the semiconductor device is a resonator, the semiconductor layer can be the lower electrode layer, the piezoelectric layer, or the upper electrode layer in the resonator. The mask of the present utility model can be applied to the lithography process of semiconductor devices, that is, applied to the exposure in the above process. Light passes through the pattern on the mask and irradiates on the photoresist layer. After the photoresist is developed, the areas on the semiconductor layer that need to be etched or trimmed are exposed or opened for the next etching or trimming process, while the undeveloped photoresist remains on the semiconductor layer to protect the areas that do not need to be etched or trimmed.

[0030] The mask includes a functional area and a monitoring area (Process Control Monitor, PCM) provided on one side of the functional area. Functional patterns are provided in the functional area. Through processes such as exposure, development, and etching, functional structures corresponding to the functional patterns can be formed on the semiconductor layer. Monitoring patterns are provided in the monitoring area. Through processes such as exposure, development, and etching, monitoring structures corresponding to the monitoring patterns can be formed on the semiconductor layer. The monitoring structure can monitor the process of the corresponding steps to reflect the process conditions of the functional structures on the entire wafer. Among them, each mask includes at least one monitoring area. Correspondingly, at least one monitoring area can be formed in each exposure area (Shot). In addition, the functional patterns and monitoring patterns of different masks are not the same, so that different functional structures and monitoring structures are formed on the semiconductor layer.

[0031] The trimming process uses an ion beam to scan the entire wafer. Theoretically, the trimming rate at the points passed by the ion beam is the same. Therefore, within the same time, the trimming thickness is the same. However, the functional patterns in the functional area on the mask and the monitoring patterns in the monitoring area are different. More specifically, after exposure and development, the areas of the functional area and the monitoring area that are exposed and need to be trimmed on the semiconductor layer are different, that is, the aperture ratios are different. Different aperture ratios will result in a loading effect. After the same duration of the trimming process, the trimming thickness of the functional area near the monitoring area is different from that of the normal functional area (i.e., the functional area far from the monitoring area). Currently, during the trial production process, it is found that on the entire semiconductor layer, there is a significant difference in the thickness between the functional structures near the monitoring area and the functional structures in the normal area (i.e., the functional structures far from the monitoring area), resulting in poor thickness uniformity, thereby affecting the yield of the semiconductor devices produced.

[0032] In view of this, the present utility model provides a mask and a semiconductor device.

[0033] Before introducing the embodiments of the present utility model, it is necessary to first define the various directions that may be involved in the following description. In the plane of the mask, a first direction (i.e., the X direction) and a second direction (i.e., the Y direction) that intersect are defined. In some embodiments, the X direction and the Y direction are perpendicular to each other. In other embodiments, the X direction and the Y direction are not perpendicular to each other. Hereinafter, the case where the X direction and the Y direction are perpendicular to each other is taken as an example for illustration.

[0034] Reference Figure 1 , Figure 1 is a schematic diagram of the partial mask provided by the present utility model. As Figure 1 shown, the present utility model provides a mask 100, which includes: a functional area 102, in which a functional pattern 104 is provided (as Figure 1 indicated by the center dotted circle frame); a monitoring area 106 provided on one side of the functional area 102, in which a monitoring pattern 108 is provided (as Figure 1 indicated by the dotted square frame) and a dummy pattern 110 (all patterns in the monitoring area 106 except the monitoring pattern 108 indicated by the dotted square frame are dummy patterns 110); the ratio of the aperture ratio of the monitoring area 106 to the aperture ratio of the functional area 102 is within a preset range; wherein, the aperture ratio is the ratio of the pattern area to the area of the region where the pattern is located.

[0035] Here, the mask 100 includes a functional area 102 and a monitoring area 106 provided on the negative X-direction side of the functional area 102. Exemplarily, the monitoring area 106 can be provided on the negative X-direction side of the functional area 102; or, the monitoring area 106 can be provided on the positive X-direction side of the functional area 102; or, the monitoring area 106 can be provided on the negative Y-direction side of the functional area 102; or, the monitoring area 106 can be provided on the positive Y-direction side of the functional area 102. The present utility model has no special limitation on the relative positional relationship between the functional area 102 and the monitoring area 106.

[0036] Here, both the functional area 102 and the monitoring area 106 can include a plurality of sub-areas with the same area. Specifically, the functional area 102 can include a plurality of functional sub-areas. For example, Figure 1 shows that the functional area 102 includes 7 functional sub-areas 102a, 102b, 102c, 102d, 102e, 102f, 102g; the monitoring area 106 can include a plurality of monitoring sub-areas. For example, Figure 1 shows that the monitoring area includes 7 monitoring sub-areas 106a, 106b, 106c, 106d, 106e, 106f, 106g. Here, the area of each functional sub-area and each monitoring sub-area is the same, and the difference between the functional sub-area and the monitoring sub-area lies in their different positions.

[0037] It should be noted that for the convenience of illustration, Figure 1 only a part of the functional area close to the monitoring area is drawn in Figure 1 and the areas of the functional area 102 and the monitoring area 106 shown are the same. However, in an actual mask, the area of the functional area can be larger than that of the monitoring area; among them, the monitoring area may only occupy a certain corner of the entire mask. As shown in combination with Figure 2 , the area of the functional area 202 on the mask 200 can be larger than that of the monitoring area 206, and the monitoring area 206 only occupies a corner of the mask 200, that is, in the same mask 200, the positive X-direction and the positive Y-direction of the monitoring area 206 are both the functional area 202. According to the distance from the monitoring area 206, the functional area 202 can be divided into a first functional area 212 and a second functional area 214. Among them, the first functional area 212 refers to a part of the functional area close to the monitoring area 206, and the second functional area 214 refers to a part of the functional area far from the monitoring area, that is, the distance between the first functional area 212 and the monitoring area 206 is less than the distance between the second functional area 214 and the monitoring area 206. In other words, the first functional area 212 is located between the monitoring area 206 and the second functional area 214. Of course, both the first functional area 212 and the second functional area 214 can include a plurality of functional sub-areas.

[0038] Return to reference Figure 1As shown, a functional pattern 104 is provided in the functional area 102; correspondingly, a functional structure can be finally formed in the functional area on the semiconductor layer by etching or trimming. The opening rate of the functional area 102 on the mask 100 refers to the ratio of the area of the functional pattern to the area of the functional area, that is, the area of the functional pattern / the area of the functional area.

[0039] Here, a monitoring pattern 108 and a dummy pattern 110 are provided in the monitoring area 106; correspondingly, a monitoring structure and a dummy structure can be formed in the monitoring area on the semiconductor layer, wherein the monitoring structure is used to perform a process monitoring test on the functional structure to reflect the process execution situation of the functional structure. The opening rate of the monitoring area 106 on the mask 100 refers to the ratio of the sum of the area of the monitoring pattern and the area of the dummy pattern to the area of the monitoring area, that is, (the area of the monitoring pattern + the area of the dummy pattern) / the area of the monitoring area.

[0040] Here, the dummy pattern is used to reduce the loading effect and has no fixed pattern shape. Those skilled in the art can flexibly select according to the actual situation. For example, the dummy patterns on the same mask can have the same or different shapes. For another example, the dummy patterns on different masks used to form different film layers can have the same or different shapes.

[0041] In some embodiments, the mask 100 is divided into a plurality of sub-areas with the same area according to the semiconductor structure, and both the functional area 102 and the monitoring area 106 include a plurality of sub-areas; wherein, a functional pattern 104 is provided in each sub-area of the functional area 102; a monitoring pattern 108 is provided in at least some sub-areas of the monitoring area 106.

[0042] Exemplarily, Figure 1 Schematically shows some sub-areas of the mask 100, which are respectively divided into 14 sub-areas with the same area. For example, 7 functional sub-areas 102a, 102b, 102c, 102d, 102e, 102f, 102g and 7 monitoring sub-areas 106a, 106b, 106c, 106d, 106e, 106f, 106g. The present invention does not have a special limitation on the number of sub-areas included in the mask 100, and it is actually divided according to the size of the wafer and the size of the required filter device.

[0043] Here, both the functional area 102 and the monitoring area 106 may include multiple sub-areas. That is, multiple sub-areas on the mask plate constitute the functional area, and other multiple sub-areas constitute the monitoring area. The division of the functional area and the monitoring area is also based on actual needs, without special size or position limitations. For the convenience of description in this article, the multiple sub-areas that constitute the functional area may be referred to as functional sub-areas, and the multiple sub-areas that constitute the monitoring area may be referred to as monitoring sub-areas. Among them, the number of sub-areas included in the monitoring area in the mask plates of different processes or products may be the same or different, and is set according to actual needs; and the area of the monitoring area is much smaller than the area of the functional area, that is, the number of monitoring sub-areas included in the monitoring area is less than the number of functional sub-areas included in the functional area.

[0044] Exemplarily, Figure 1 It is shown that the functional area 102 includes 7 functional sub-areas, namely functional sub-area 102a, functional sub-area 102b, functional sub-area 102c, functional sub-area 102d, functional sub-area 102e, functional sub-area 102f, and functional sub-area 102g. Figure 1 It is only used for exemplary illustration and does not constitute a limitation on the number of functional sub-areas included in the functional area on the mask plate.

[0045] Exemplarily, Figure 1 It is also shown that the monitoring area 106 includes 7 monitoring sub-areas, namely monitoring sub-area 106a, monitoring sub-area 106b, monitoring sub-area 106c, monitoring sub-area 106d, monitoring sub-area 106e, monitoring sub-area 106f, and monitoring sub-area 106g. Figure 1 It is only used for exemplary illustration and does not constitute a limitation on the number of monitoring sub-areas included in the monitoring area on the mask plate.

[0046] In some embodiments, monitoring patterns 108 are provided in at least some of the monitoring sub-areas (i.e., some monitoring sub-areas or all monitoring sub-areas) of the monitoring area 106. Correspondingly, the monitoring patterns 108 in the monitoring area 106 may form a monitoring structure on the semiconductor layer. Figure 1 It is shown that monitoring patterns 108 are provided in some of the monitoring sub-areas (i.e., monitoring sub-areas 106c, 106d, 106e, and 106f) of the monitoring area 106. Of course, monitoring patterns may also be provided in all of the monitoring sub-areas of the monitoring area.

[0047] In some embodiments, dummy patterns 110 are provided in one or more of the monitoring sub-areas of the monitoring area 106. Correspondingly, the dummy patterns 110 in the monitoring area 106 may form a dummy structure on the semiconductor layer. Figure 1It is shown that dummy patterns 110 are provided in all the monitoring sub - areas of the monitoring area 106 (i.e., monitoring sub - area 106a, monitoring sub - area 106b, monitoring sub - area 106c, monitoring sub - area 106d, monitoring sub - area 106e, monitoring sub - area 106f, monitoring sub - area 106g). Of course, dummy patterns can also be provided in some of the monitoring sub - areas of the monitoring area. More specifically, the shape of the dummy pattern 110 provided in the monitoring sub - area 106a is the same as that of the functional pattern 104, and the shapes of the dummy patterns 110 provided in the monitoring sub - areas 106b, 106c, 106d, 106e, 106f, and 106g are different from those of the functional pattern 104 and are in the shape of a long strip.

[0048] It should be noted that in some of the monitoring sub - areas included in the monitoring area, only dummy patterns can be provided without monitoring patterns; or, in some of the monitoring sub - areas included in the monitoring area, only monitoring patterns can be provided without dummy patterns; or, in some of the monitoring sub - areas included in the monitoring area, both dummy patterns and monitoring patterns can be provided. Combining Figure 1 As shown, only dummy patterns 110 are provided in the monitoring sub - areas 106a, 106b, and 106g; both dummy patterns 110 and monitoring patterns 108 are provided in the monitoring sub - areas 106c, 106d, 106e, and 106f.

[0049] In some embodiments, the number of monitoring sub - areas included in the monitoring area 106 is less than the number of functional sub - areas included in the functional area 102, that is, the area of the monitoring area is smaller than the area of the functional area. In this way, reducing the area of the monitoring area on the mask can reduce the area occupied by the monitoring area in the actual formation of semiconductor devices, thereby increasing the output quantity of semiconductor devices on the wafer.

[0050] In some embodiments, the opening rate of each functional sub - area of the functional area 102 is the same as the opening rate of the functional area 102.

[0051] Here, the opening rate of the functional sub - area of the functional area 102 refers to the ratio of the area of the functional pattern in the functional sub - area to the area of the functional sub - area. Since the functional patterns 104 in each functional sub - area of the functional area 102 are the same, and the area of each functional sub - area included in the functional area 102 is the same, the opening rate of each functional sub - area of the functional area 102 is the same. Denote the area of the functional pattern in each functional sub - area of the functional area 102 as a, and denote the area of each functional sub - area of the functional area 102 as S. Then the opening rate of each functional sub - area of the functional area 102 is a / S.

[0052] Here, the aperture ratio of the functional area 102 refers to the ratio of the area of the functional pattern to the area of the functional area, that is, the area of the functional pattern / the area of the functional area; among them, the area of the functional pattern refers to the sum of the areas of the functional patterns in each functional sub-area included in the functional area, and the area of the functional area refers to the sum of the areas of all the functional sub-areas included in the functional area. As described above, the number of functional sub-areas included in the functional area 102 is denoted as N1, then the aperture ratio of the functional area 102 is (N1 * a) / (N1 * S), which is a / S. That is to say, the aperture ratio of each functional sub-area of the functional area 102 is the same as that of the functional area 102.

[0053] In some embodiments, the dummy pattern 110 is disposed in one or more monitoring sub-areas of the monitoring area 106.

[0054] Here, the dummy pattern 110 can be disposed in 1 sub-area of the monitoring area 106; or, the dummy pattern 110 can also be disposed in multiple sub-areas of the monitoring area 106. For example, the dummy pattern 110 can also be disposed in all sub-areas of the monitoring area 106. Figure 1 It is shown in that the dummy pattern 110 is disposed in all the monitoring sub-areas of the monitoring area 106. For example, the shape of the dummy pattern 110 disposed in the monitoring sub-area 106a is the same as that of the functional pattern 104, and the dummy patterns 110 disposed in the monitoring sub-areas 106b, 106c, 106d, 106e, 106f, and 106g are in the shape of a long strip, which is different from the shape of the functional pattern 104.

[0055] In some embodiments, the dummy pattern 110 is disposed in the monitoring sub-areas of the monitoring area 106 that have the monitoring pattern 108; and / or, the dummy pattern 110 is disposed in the monitoring sub-areas of the monitoring area 106 that do not have the monitoring pattern 108.

[0056] Here, the present invention does not have any special limitation on the setting position of the dummy pattern 110 in the monitoring area 106, and the dummy pattern 110 can be disposed in any monitoring sub-area of the monitoring area 106. Exemplarily, the dummy pattern 110 can be disposed in the monitoring sub-areas of the monitoring area 106 that have the monitoring pattern 108, that is, the dummy pattern 110 can be disposed in the monitoring sub-areas 106c, 106d, 106e, and 106f of the monitoring area 106; and / or, the dummy pattern 110 is disposed in the monitoring sub-areas of the monitoring area 106 that do not have the monitoring pattern 108, that is, the dummy pattern 110 can be disposed in the monitoring sub-areas 106a, 106b, and 106g of the monitoring area 106.

[0057] Here, the opening rate of the monitoring area 106 on the mask 100 refers to the ratio of the sum of the monitoring pattern area and the dummy pattern area to the monitoring area, that is, (monitoring pattern area + dummy pattern area) / monitoring area; alternatively, the opening rate of the monitoring area 106 on the mask 100 refers to the sum of the ratio of the monitoring pattern area to the monitoring area and the ratio of the dummy pattern area to the monitoring area, that is, (monitoring pattern area / monitoring area + dummy pattern area / monitoring area). Denote the monitoring pattern area in the monitoring area 106 as b, the dummy pattern area in the monitoring area 106 as c, the area of each monitoring sub - area in the monitoring area 106 as S, and the number of monitoring sub - areas included in the monitoring area 106 as N2. Then the opening rate of the monitoring area 106 is (b + c) / (N2*S), or alternatively, the opening rate of the monitoring area 106 is (b / (N2*S)+c / (N2*S)).

[0058] It should be noted that, in some embodiments, the dummy pattern 110 is disposed in the monitoring sub - areas in the monitoring area 106 that do not have the monitoring pattern 108. Since the monitoring pattern has a fixed pattern, disposing the dummy pattern 110 in the monitoring sub - areas in the monitoring area 106 that do not have the monitoring pattern 108 is more conducive to the diversified design of the graphic shape of the dummy pattern, and avoids the influence of the dummy pattern 110 on the monitoring pattern 108.

[0059] In some embodiments, the graphic shape of the dummy pattern 110 is the same as or different from the graphic shape of the functional pattern 104.

[0060] Here, the present utility model does not have special limitations on the graphic shape of the dummy pattern 110. The graphic shape of the dummy pattern 110 can be the same as or different from the graphic shape of the functional pattern 104. It should be noted that the purpose of designing the dummy pattern 110 is to adjust the opening rate of the monitoring area 106 so that the ratio of the opening rate of the monitoring area 106 to the opening rate of the functional area 102 is within a preset range. The same graphic shape of the dummy pattern 110 and the functional pattern 104 is more conducive to reducing the influence of the load effect and ensuring the uniformity of the trimming thickness of the functional area on the semiconductor layer; it is also conducive to adjusting the opening rate, and without complex calculation, making the ratio of the opening rate of the monitoring area 106 to the opening rate of the functional area 102 within a preset range.

[0061] Exemplarily, the shape of the dummy pattern 110 can include but is not limited to a circle, an ellipse, a rhombus, a square, a sector, a polygon, and the like.

[0062] Exemplarily, the positions of the dummy patterns in the monitoring areas on different masks are different.

[0063] Exemplarily, the opening rate of the monitoring area on different photomasks can be the same or different, and the opening rate of the functional area on different photomasks can be the same or different. For the same photomask, adjusting the opening rate of the monitoring area so that the ratio of the opening rate of the monitoring area to the opening rate of the functional area is within a preset range is sufficient. Considering that the adjustable space of the monitoring pattern in the monitoring area is small, the opening rate of the monitoring area is mainly adjusted by adjusting the dummy pattern in the monitoring area.

[0064] In some embodiments, the preset range is from 0.9 to 1.1.

[0065] Here, 0.9 ≤ opening rate of the monitoring area / opening rate of the functional area ≤ 1.1, that is, 0.9 * opening rate of the functional area ≤ opening rate of the monitoring area ≤ 1.1 * opening rate of the functional area. In this way, the opening rate of the monitoring area and the opening rate of the functional area are relatively close. In the semiconductor device fabricated using the above photomask, the thickness of the semiconductor layer corresponding to the second functional area (also called the "normal functional area") and the first functional area is uniform, thereby improving the yield of the fabricated semiconductor device.

[0066] In some embodiments, the opening rate of the monitoring area is the same as the opening rate of the functional area.

[0067] Here, the opening rate of the monitoring area = the opening rate of the functional area. In this way, in the semiconductor device fabricated using the above photomask, it is more conducive to controlling the thickness uniformity of the functional area and the monitoring area on the semiconductor layer, thereby improving the yield of the fabricated semiconductor device.

[0068] In some embodiments, the photomask 100 is used in the trimming process.

[0069] Here, the above photomask 100 can be applied to fabricate a semiconductor device. The semiconductor device may include a filter, and the filter may include series resonators or parallel resonators. The photomask is applied in the lithography process and further acts on the frequency modulation trimming process of the series resonator or parallel resonator of the filter, so that the frequency of the series resonator or parallel resonator reaches the preset requirements.

[0070] It should be noted that the operating frequency of a Film Bulk Acoustic Resonator (FBAR) is negatively correlated with its thickness. In the field of resonator technology, people more often pursue the frequency uniformity across the entire wafer. The higher the frequency uniformity, the higher the yield of the resonator. Improving the consistency of the opening rates of the monitoring area and the functional area can improve the thickness uniformity of the entire wafer, thereby improving the frequency uniformity of the resonators across the entire wafer.

[0071] Refer to Figure 3 Figure (a) inFigure 3 In Figure (a), it is a schematic diagram where the opening rate of the monitoring area is much smaller than that of the functional area. Figure 3 In Figure (b), it is a schematic diagram of increasing the opening rate of the monitoring area provided by the present invention. As Figure 3 As shown in Figure (a) and Figure (b), the mask 300 includes: a functional area 302, and the functional area 302 includes 5 sub-areas with the same area, namely functional sub-areas 302a, 302b, 302c, 302d, and 302e; among them, a functional pattern 304 is provided in each functional sub-area (as Figure 3 indicated by the dotted-line circular frame in the figure); a monitoring area 306, and the monitoring area 306 includes 5 monitoring sub-areas with the same area, namely monitoring sub-areas 306a, 306b, 306c, 306d, and 306e; among them, a monitoring pattern 308 is provided in the monitoring area 306 (as Figure 3 indicated by the dashed-line square frame in the figure).

[0072] Here, the opening rate of the monitoring area is the ratio of the area of the monitoring pattern to the area of the monitoring area, and the opening rate of the functional area is the ratio of the area of the functional pattern to the area of the functional area. At this time, the opening rate of the monitoring area is much smaller than that of the functional area. Exemplarily, the opening rate of the monitoring area < 0.9 * the opening rate of the functional area. Considering the large difference between the opening rate of the monitoring area and the opening rate of the functional area, there will be a loading effect during the trimming process, resulting in poor thickness uniformity of the trimmed semiconductor layer. Therefore, the opening rate of the monitoring area can be increased by adding dummy patterns in the monitoring area.

[0073] As Figure 3 shown in Figure (b), dummy patterns 310 are also provided in the monitoring area 306 of the mask 300 (as Figure 3 indicated by the dashed-line circular frame in the figure), and the dummy patterns 310 have different graphic shapes. In this way, the opening rate of the monitoring area is the ratio of the sum of the area of the monitoring pattern and the area of the dummy pattern to the area of the monitoring area, which can increase the opening rate of the monitoring area, make the opening rate of the monitoring area closer to that of the functional area, and in the semiconductor device manufactured using the above mask, the thickness of the semiconductor layer near the monitoring area (i.e., the semiconductor layer corresponding to the first functional area on the mask) is the same as the thickness of the semiconductor layer far from the monitoring area (i.e., the semiconductor layer corresponding to the second functional area on the mask), thereby improving the yield of the manufactured semiconductor device.

[0074] Figure 3 Figure (b) shows that the graphic shapes of some dummy patterns can be the same as those of the functional patterns, and the graphic shapes of the other part of the dummy patterns are different from those of the functional patterns, and can also be circular and rectangular.

[0075] Here, setting dummy patterns in the monitoring area can reduce the loading effect, which can not only improve the thickness uniformity of the semiconductor layer near the monitoring area and the semiconductor layer far from the monitoring area, but also make the thickness consistency between the monitoring area and the functional area higher, thereby making the monitoring of each process parameter in the monitoring area more accurate.

[0076] Reference Figure 4 In Figure (a) of Figure 4 Figure (a) is a schematic diagram showing that the opening rate of the monitoring area is much larger than that of the functional area. Figure 4 Figure (b) is a schematic diagram showing the reduction of the opening rate of the monitoring area provided by the present invention. As Figure 4 As shown in Figures (a) and (b), the mask 400 includes: a functional area 402, and the functional area 402 includes 5 sub-areas with the same area, namely functional sub-areas 402a, 402b, 402c, 402d, and 402e; wherein, a functional pattern 404 is provided in each functional sub-area (as Figure 4 indicated by the dotted circle in the middle); a monitoring area 406, and the monitoring area 406 includes 5 monitoring sub-areas with the same area, namely monitoring sub-areas 406a, 406b, 406c, 406d, and 406e; wherein, a monitoring pattern 408 is provided in the monitoring area 406 (as Figure 4 indicated by the dashed box in the middle).

[0077] Here, the opening rate of the monitoring area is the ratio of the area of the monitoring pattern to the area of the monitoring area, and the opening rate of the functional area is the ratio of the area of the functional pattern to the area of the functional area. At this time, the opening rate of the monitoring area is much larger than that of the functional area. Exemplarily, the opening rate of the monitoring area > 1.1 * the opening rate of the functional area. Considering the large difference between the opening rate of the monitoring area and the opening rate of the functional area, there will be a loading effect during the trimming process, resulting in poor thickness uniformity of the trimmed semiconductor layer. Therefore, the opening rate of the monitoring area can be reduced by reducing the area of the dummy pattern in the monitoring area.

[0078] As Figure 4 shown in Figure (b), the monitoring pattern 408 provided in the monitoring area 406 is reduced proportionally. In this way, the opening rate of the monitoring area is the ratio of the area of the reduced monitoring pattern to the area of the monitoring area, which can reduce the opening rate of the monitoring area and make the opening rate of the monitoring area closer to that of the functional area. In the semiconductor device manufactured using the above mask, the thickness of the semiconductor layer near the monitoring area (i.e., the semiconductor layer corresponding to the first functional area on the mask) and the thickness of the semiconductor layer far from the monitoring area (i.e., the semiconductor layer corresponding to the second functional area on the mask) are the same, thereby improving the yield of the manufactured semiconductor device.

[0079] The present utility model further provides a semiconductor device, which includes a filter obtained by using the mask in the above technical solution.

[0080] Reference Figure 5 , Figure 5 In (a) of [], it is a schematic diagram of the thickness difference distribution of the semiconductor layer before and after trimming provided by the present utility model. Figure 5 In (b) of [], it is a schematic diagram of the thickness difference distribution of the semiconductor layer before and after trimming provided by the related technical solution. Figure 5 In [], different colors represent different thickness differences in this area. The redder the red part, the greater the thickness difference of the semiconductor layer before and after trimming; the bluer the blue part, the smaller the thickness difference of the semiconductor layer before and after trimming. Figure 5 The central area in (b) of [] is red and the area of the red region is relatively large. From the central area along the radial outward direction, there are yellow region and green region in turn. That is to say, the overall thickness difference of the semiconductor layer before and after trimming provided by the related technical solution is relatively large. Figure 5 In (a) of [], it is basically yellow, and the yellow region represents that the thickness difference of the semiconductor layer before and after trimming is small. Therefore, by controlling the ratio of the opening rate of the monitoring area to the opening rate of the functional area within a preset range, the thickness of the semiconductor layer near the monitoring area is made consistent with the thickness of the semiconductor layer far from the monitoring area.

[0081] Reference Figure 6 , Figure 6 is a schematic diagram of the yield comparison of the semiconductor devices provided by the related technical solution and the present utility model. As Figure 6 shown, the horizontal axis represents the wafer number, and the vertical axis represents the yield. Figure 6 In [], curve (a) represents the yield of the semiconductor device provided by the related technical solution, and curve (b) represents the yield of the semiconductor device provided by the present utility model; by controlling the opening rate of the monitoring area, making the ratio of the opening rate of the monitoring area to the opening rate of the functional area within a preset range, the yield of the fabricated semiconductor device can be significantly improved.

[0082] The present utility model provides a mask and a semiconductor device. In the mask provided by the present utility model, functional patterns are provided in the functional area, monitoring patterns and dummy patterns are provided in the monitoring area, and the ratio of the opening rate of the monitoring area to the opening rate of the functional area is within a preset range; thus, by using the above mask, the thickness uniformity problem of the semiconductor structure caused by the loading effect can be effectively improved, making the thickness of the semiconductor layer near the monitoring area consistent with the thickness of the semiconductor layer in the normal functional area (i.e., the semiconductor layer far from the monitoring area), improving the yield of the finally fabricated semiconductor device, ensuring the quality and performance of the product, and improving the production efficiency.

[0083] It should be understood that the "one embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present utility model. Therefore, the "in one embodiment" or "in an embodiment" that appears throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present utility model, the magnitude of the serial numbers of the above processes does not mean the sequence of execution, and the execution sequence of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present utility model. The serial numbers of the embodiments of the present utility model above are only for description and do not represent the advantages or disadvantages of the embodiments.

[0084] The above is only the preferred embodiment of the present utility model, and does not limit the patent scope of the present utility model. Any equivalent structural transformation made by using the content of the specification and drawings of the present utility model under the concept of the present utility model, or directly / indirectly applied in other related technical fields, is included in the patent protection scope of the present utility model.

Claims

1. A mask, characterized in that, The mask includes: A functional area, in which functional patterns are provided; A monitoring area provided on one side of the functional area, in which monitoring patterns and dummy patterns are provided; the ratio of the opening rate of the monitoring area to the opening rate of the functional area is within a preset range; wherein, the opening rate is the ratio of the pattern area to the area of the region where the pattern is located.

2. The mask according to claim 1, characterized in that, The preset range is from 0.9 to 1.

1.

3. The mask according to claim 1, characterized in that, The opening rate of the monitoring area is the same as the opening rate of the functional area.

4. The mask according to claim 1, characterized in that, The mask is divided into a plurality of sub-areas with the same area, and both the functional area and the monitoring area include a plurality of sub-areas; wherein, functional patterns are provided in each sub-area of the functional area; monitoring patterns are provided in at least some of the sub-areas of the monitoring area.

5. The mask according to claim 4, characterized in that, The opening rate of each sub-area of the functional area is the same as the opening rate of the functional area.

6. The reticle according to claim 4, wherein The dummy pattern is provided in one or more sub-areas of the monitoring area.

7. The reticle according to claim 4, wherein The dummy pattern is provided in the sub-areas of the monitoring area where the monitoring patterns are present; and / or, the dummy pattern is provided in the sub-areas of the monitoring area where the monitoring patterns are not present.

8. The mask according to claim 1, characterized in that, The graphic shape of the dummy pattern is the same as or different from the graphic shape of the functional pattern.

9. The reticle according to claim 1, wherein The mask is used in a trimming process.

10. A semiconductor device, characterized in that, The semiconductor device includes a filter obtained after using the mask according to any one of claims 1 to 9.

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