Light-emitting substrate and light-emitting device

Abstract

The embodiment of the utility model provides a light-emitting substrate and a light-emitting device, relates to the technical field of display, and is used for improving the efficiency of the light-emitting substrate. The light-emitting substrate comprises a substrate body, a pixel defining layer, a plurality of light-emitting functional layers and a plurality of light extraction layers. The pixel defining layer is arranged on the substrate; the pixel defining layer defines a plurality of pixel openings. The plurality of light-emitting functional layers are arranged on the substrate; one light-emitting functional layer is located in one pixel opening. One light extraction layer is arranged in one pixel opening and covers the side wall of the pixel opening; the light extraction layer is configured to reflect a portion of the light emitted by the light-emitting functional layer, the portion facing the light extraction layer. The surface of the side wall, far away from the pixel opening, of the light extraction layer is recessed towards the direction far away from the center of the pixel opening. The light-emitting substrate is used for displaying images or emitting light.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and particularly to a light-emitting substrate and a light-emitting device. Background Art

[0002] As a new type of light-emitting material, quantum dots (QDs) have the advantages of self-luminescence, high light color purity, high light-emitting quantum efficiency, adjustable emission color, and long service life, and have become a research hotspot for new light-emitting materials for light-emitting diodes (LEDs). Therefore, quantum dot light-emitting diodes (QLEDs) using quantum dot light-emitting materials as the light-emitting layer have become the main direction of research on new display devices. Summary of the Utility Model

[0003] The purpose of the embodiments of the present disclosure is to provide a light-emitting substrate and a light-emitting device for improving the efficiency of the light-emitting substrate.

[0004] To achieve the above purpose, the embodiments of the present disclosure provide the following technical solutions:

[0005] On the one hand, a light-emitting substrate is provided. The light-emitting substrate includes a substrate, a pixel definition layer, a plurality of light-emitting functional layers, and a plurality of light extraction layers. The pixel definition layer is disposed on the substrate; the pixel definition layer defines a plurality of pixel openings. The plurality of light-emitting functional layers are disposed on the substrate; one light-emitting functional layer is located within one pixel opening. One light extraction layer is disposed within one pixel opening and covers the sidewall of the pixel opening; the light extraction layer is configured to reflect a part of the light emitted by the light-emitting functional layer that is directed towards the light extraction layer. The surface of the sidewall of the light extraction layer that is far from the pixel opening (hereinafter referred to as the first surface) is recessed in a direction away from the center of the pixel opening.

[0006] In the above light-emitting substrate, the light extraction layer covers the sidewall of the pixel opening, and the lateral emission light emitted by the light-emitting functional layer can be reflected at the light extraction layer; moreover, the first surface is recessed in a direction away from the center of the pixel opening. After the lateral emission light is reflected by the light extraction layer, it can converge towards the pixel opening and exit from the light exit opening of the pixel opening, forming a part of the effective light. In other words, the concave shape of the first surface has a good effect on the inward convergence of the lateral emission light, which can improve the light collection effect of the light extraction layer. In this way, on the one hand, the light extraction efficiency of the light-emitting substrate can be improved, and the efficiency of the light-emitting substrate can be increased; on the other hand, optical crosstalk between the light emitted by adjacent light-emitting functional layers can be prevented, and the color purity of the light emitted by the light-emitting substrate is relatively high.

[0007] In some embodiments, the sidewalls of the pixel openings are recessed in a direction away from the center of the pixel openings; the light extraction layer continues the topography of the sidewalls of the pixel openings.

[0008] In some embodiments, the light-emitting functional layer includes at least one common film layer, and the common film layers in multiple pixel openings are connected. The portion of the common film layer covering the sidewalls of the pixel openings is located between the pixel defining layer and the light extraction layer and continues the topography of the sidewalls of the pixel openings; the light extraction layer continues the topography of the portion of the common film layer covering the sidewalls of the pixel openings.

[0009] In some embodiments, the cross-section of the pixel opening perpendicular to the substrate has a selected intersection line with the pixel defining layer. The angle formed by the tangent of the selected intersection line and the reference plane is a selected angle; the reference plane is the surface of the pixel defining layer close to the substrate. The selected angle corresponding to the end point of the selected intersection line close to the substrate is A1; the selected angle corresponding to the end point of the selected intersection line far from the substrate is A2. Among them, along the direction away from the substrate, the selected angle first gradually increases and then gradually decreases, and A1 is greater than or equal to 20° and less than 90°; or, along the direction away from the substrate, the selected angle gradually increases, and A1 is greater than or equal to 5° and less than 90°, and A2 is greater than 5° and less than or equal to 90°; or, along the direction away from the substrate, the selected angle gradually decreases, and A1 is less than or equal to 90°, and A2 is greater than or equal to 0° and less than 90°.

[0010] In some embodiments, the light-emitting substrate further includes a packaging structure. The packaging structure is located on the side of the pixel defining layer and the multiple light-emitting functional layers away from the substrate. Among them, the multiple light extraction layers located in multiple pixel openings are connected; the multiple light extraction layers are multiplexed as the portion of the packaging structure close to the substrate.

[0011] In some embodiments, the light-emitting substrate further includes a plurality of auxiliary extraction structures. An auxiliary extraction structure covers one side of the sidewall of a light extraction layer away from the pixel opening and is in contact with the light extraction layer. The refractive index of the material of the auxiliary extraction structure is greater than the refractive index of the material of the light extraction layer.

[0012] In some embodiments, the difference between the refractive index of the material of the auxiliary extraction structure and the refractive index of the material of the light extraction layer is greater than or equal to 0.1.

[0013] In some embodiments, the material of the auxiliary extraction structure includes one or a combination of two of modified acrylic acid and modified epoxy resin; or, the material of the auxiliary extraction structure includes a base material and functional nanoparticles mixed in the base material; the base material includes one or a combination of two of acrylic acid and epoxy resin; the functional nanoparticles are used to increase the refractive index of the material of the auxiliary extraction structure.

[0014] In some embodiments, the functional nanoparticles include one or a combination of two of zirconia and titanium oxide.

[0015] In some embodiments, the auxiliary extraction structure includes at least two auxiliary extraction layers arranged in sequence along a direction away from the light extraction layer; among two adjacent auxiliary extraction layers, the refractive index of the material of the auxiliary extraction layer relatively closer to the light extraction layer is less than the refractive index of the material of the auxiliary extraction layer relatively farther from the light extraction layer.

[0016] In some embodiments, when multiple light extraction layers are multiplexed as a part of the encapsulation structure close to the substrate, the multiple auxiliary extraction structures provided in multiple pixel openings are connected, and the multiple auxiliary extraction structures are multiplexed as a part of the encapsulation structure.

[0017] In some embodiments, the refractive index of the material of the light extraction layer ranges from 1.45 to 1.75.

[0018] In some embodiments, the material of the light extraction layer includes silicon oxide and / or silicon oxynitride.

[0019] In some embodiments, the average thickness of the light extraction layer is less than or equal to 1 μm.

[0020] In some embodiments, the pixel defining layer has a size range of 0.5 μm to 1.8 μm in the thickness direction of the substrate.

[0021] In another aspect, a light-emitting device is provided. The light-emitting device includes: a light-emitting substrate and a driving chip as described in any one of the above embodiments, and the driving chip is used to drive the light-emitting substrate to emit light.

[0022] The beneficial effects that the above light-emitting device can achieve are the same as those of the above light-emitting substrate, and will not be elaborated here. Description of the Drawings

[0023] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings required to be used in some embodiments of the present disclosure will be briefly introduced below. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure, and those of ordinary skill in the art can also obtain other drawings according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual size of the products, the actual processes of the methods, the actual timings of the signals, etc. involved in the embodiments of the present disclosure.

[0024] Figure 1 Structural diagram of a light-emitting device according to some embodiments;

[0025] Figure 2Structural diagram of a light-emitting device according to some other embodiments;

[0026] Figure 3 Structural diagram of a light-emitting device according to some embodiments;

[0027] Figure 4A Structural diagram of a light-emitting device according to some other embodiments;

[0028] Figure 4B Partial enlarged view of a light-emitting device according to some embodiments;

[0029] Figure 4C Structural diagram of a light-emitting device according to some other embodiments;

[0030] Figure 4D Structural diagram of a light-emitting device according to some other embodiments;

[0031] Figure 4E Structural diagram of a light-emitting device according to some other embodiments;

[0032] Figure 5A Structural diagram of a light-emitting device according to some other embodiments;

[0033] Figure 5B Partial enlarged view of a light-emitting device according to some other embodiments;

[0034] Figure 6A Structural diagram of a light-emitting device according to some other embodiments;

[0035] Figure 6B Partial enlarged view of a light-emitting device according to some other embodiments;

[0036] Figure 7 Partial cross-sectional view of the microscopic morphology of a light-emitting substrate according to some embodiments;

[0037] Figure 8 Schematic diagram of the reflection of lateral emission light by a light extraction layer according to some embodiments;

[0038] Figure 9 Structural diagram of a light-emitting device according to some other embodiments;

[0039] Figure 10 Structural diagram of a light-emitting device according to some other embodiments;

[0040] Figure 11A Flow chart of a method for preparing a light-emitting substrate according to some embodiments;

[0041] Figure 11B Step diagram of a method for preparing a light-emitting substrate according to some embodiments;

[0042] Figure 12 A step diagram of a method for forming a pixel defining layer according to some embodiments;

[0043] Figure 13 A step diagram of a method for forming a pixel defining layer according to some other embodiments;

[0044] Figure 14 A partial cross-sectional view of the microscopic morphology of a light-emitting substrate according to some other embodiments;

[0045] Figure 15 A step diagram of a method for forming a pixel defining layer according to some other embodiments;

[0046] Figure 16 A partial cross-sectional view of the microscopic morphology of a light-emitting substrate according to some other embodiments. Detailed implementation manners

[0047] The technical solutions in some embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings. Apparently, the described embodiments are only a part rather than all of the embodiments of the present disclosure. All other embodiments obtained by those of ordinary skill in the art based on the embodiments provided in the present disclosure fall within the scope of protection of the present disclosure.

[0048] Unless otherwise required by the context, the term "comprising" is interpreted in an open and inclusive sense throughout the specification and the claims, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples" or "some examples" etc. are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0049] Hereinafter, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "a plurality" is two or more.

[0050] When describing some embodiments, the expressions "connected" and its derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connected" may be a fixed connection, a detachable connection, or integrated; it may be directly connected or indirectly connected through an intermediate medium. The embodiments disclosed herein are not necessarily limited to the content herein.

[0051] "At least one of A, B, and C" has the same meaning as "at least one of A, B, or C", and both include the following combinations of A, B, and C: only A, only B, only C, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0052] "A and / or B" includes the following three combinations: only A, only B, and the combination of A and B.

[0053] The use of "is adapted to" or "is configured to" herein means open and inclusive language, which does not exclude a device adapted to or configured to perform additional tasks or steps.

[0054] In addition, the use of "based on" means open and inclusive, because a process, step, calculation, or other action "based on" one or more of the stated conditions or values may, in practice, be based on additional conditions or values beyond the stated ones.

[0055] As used herein, "about", "substantially", or "approximately" includes the stated value and the average value within an acceptable deviation range of the specific value, where the acceptable deviation range is determined by a person of ordinary skill in the art considering the measurement being discussed and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system).

[0056] As used herein, "parallel", "perpendicular", "equal" include the stated situation and situations similar to the stated situation, and the range of the similar situations is within an acceptable deviation range, where the acceptable deviation range is determined by a person of ordinary skill in the art considering the measurement being discussed and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallel and approximate parallel, where the acceptable deviation range of approximate parallel can be, for example, within 5° deviation; "perpendicular" includes absolute perpendicular and approximate perpendicular, where the acceptable deviation range of approximate perpendicular can also be, for example, within 5° deviation. "Equal" includes absolute equality and approximate equality, where the acceptable deviation range of approximate equality can be, for example, that the difference between the two equal ones is less than or equal to 5% of either one.

[0057] It should be understood that when a layer or element is referred to as being on another layer or substrate, it may be that the layer or element is directly on the other layer or substrate, or there may be an intermediate layer between the layer or element and the other layer or substrate.

[0058] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of regions are exaggerated for clarity. Accordingly, variations in the shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations resulting from, for example, manufacturing. For example, an etched region shown as rectangular will typically have curved features. Thus, the regions shown in the drawings are schematic in nature, and their shapes are not intended to depict the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0059] It should be noted that in the drawings of the present disclosure, for example, 11~1 indicates that component 11 belongs to component 1, and for example, 131~130 indicates that the light-emitting functional layer 131 belongs to the light-emitting device 130. Other similar reference numerals appearing in the drawings of the present disclosure also follow the above description. For example, 1 / 2 in the drawings of the present disclosure indicates that both component 1 and component 2 can refer to this component. For example, 150 / 141 in the drawings indicates that both the light extraction layer 150 and the first encapsulation layer 141 can be represented by this component. Other similar reference numerals appearing in the drawings also follow the above description.

[0060] As Figure 1 shown, some embodiments of the present disclosure provide a light-emitting device 200. The light-emitting device 200 includes a light-emitting substrate 100. The light-emitting device 200 has a function of emitting light or displaying.

[0061] The above-described light-emitting device 200 can be any light-emitting device that displays whether it is moving (e.g., video) or stationary (e.g., still image), and whether it is text or image. More specifically, it is contemplated that the light-emitting device 200 of the embodiments can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal digital assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photos, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry).

[0062] In terms of the light-emitting type of the light-emitting device 200, the above-mentioned light-emitting device 200 may be an Organic Light-Emitting Diode (OLED) light-emitting device or a Quantum Dot Light Emitting Diodes (QLED) light-emitting device. In terms of the form of the light-emitting device 200, the above-mentioned light-emitting device 200 may be a planar light-emitting device, a curved light-emitting device, a foldable light-emitting device, etc. In terms of the shape of the light-emitting device 200, the above-mentioned light-emitting device 200 may be rectangular, circular, etc. The embodiments of the present disclosure do not make specific limitations in this regard. Hereinafter, taking the light-emitting device 200 as a planar QLED light-emitting device as an example, some embodiments of the present disclosure will be schematically described. However, the implementation manners of the present disclosure are not limited thereto, and any other light-emitting devices may also be considered as long as the same technical idea is applied.

[0063] Exemplarily, as Figure 1 shown, the light-emitting device 200 further includes a driving chip 210. The driving chip 210 is used to drive the light-emitting substrate 100 to emit light or display.

[0064] Exemplarily, as Figure 4A 、 Figure 4E 、 Figure 5A and Figure 6A shown, the light-emitting device 200 further includes a cover plate 220 disposed on the light-emitting side of the light-emitting substrate 100. The cover plate 220 plays a role in supporting and protecting the light-emitting substrate 100, and ensures that the light-emitting substrate 100 can still maintain good use effects when being impacted or scratched.

[0065] Exemplarily, the cover plate 220 may include one or any combination of a glass cover plate, a ceramic cover plate, a plastic cover plate, and an optical composite cover plate.

[0066] Exemplarily, as Figure 4C and Figure 4D shown, the light-emitting device 200 further includes an auxiliary film group 230 disposed on the light-emitting side of the light-emitting substrate 100. The above-mentioned auxiliary film group 230 is, for example, a protective film group or a touch screen film group.

[0067] In addition, the light-emitting device 200 may further include an under-screen camera, an under-screen fingerprint recognition sensor, etc., so that the light-emitting device 200 can implement various different functions such as taking pictures, recording videos, fingerprint recognition, or face recognition.

[0068] In some embodiments, as Figure 2 shown, the light-emitting substrate 100 includes a substrate substrate 110 and a pixel defining layer 120. The pixel defining layer 120 is disposed on the substrate substrate 110. The pixel defining layer 120 defines a plurality of pixel openings Q.

[0069] It should be noted that in some examples, the surface of the substrate 110 has various microstructures such as channels, openings, circuits (such as the pixel driving circuit 1121 described below), etc. The portion of the pixel defining layer 120 close to the substrate 110 may contact these microstructures on the surface of the substrate 110. However, for the convenience of expression, in the drawings of the present disclosure, these microstructures on the substrate 110 are omitted, that is, the surface of the substrate 110 close to the pixel defining layer 120 is represented as an approximately flat surface. However, the slight deviations in the contour of the pixel defining layer 120 caused by these microstructures and the parameter such as the selected angle α described in detail below should all be covered within the protection scope of the present disclosure.

[0070] In some embodiments, as Figure 2 shown, the light-emitting substrate 100 further includes a plurality of light-emitting devices 130 disposed in a plurality of pixel openings Q. For example, the plurality of light-emitting devices 130 may be disposed in one-to-one correspondence with the plurality of pixel openings Q.

[0071] In some embodiments, as Figure 2 shown, the substrate 110 includes a substrate 111 and a driving circuit layer 112 disposed on one side of the substrate 111 along the first direction X. In this case, the pixel defining layer 120 may be located on the side of the driving circuit layer 112 away from the substrate 111.

[0072] When the substrate 110 includes the substrate 111, the first direction X is, for example, the thickness direction of the substrate 110. The plurality of pixel openings Q may be arranged along the second direction Y, and the second direction Y is, for example, a direction parallel to the plane where the substrate 111 is located.

[0073] Exemplarily, the material of the substrate 111 may be a rigid material, such as glass, to achieve a rigid substrate display; or, the material of the substrate 111 may also be a flexible material, such as polyimide (PI) or polyethylene glycol terephthalate (PET), to achieve a flexible substrate display.

[0074] In some examples, the driving circuit layer 112 includes a multi-layer backplane film layer disposed on the substrate 111. The multi-layer backplane film layer includes any combination of one or more of a buffer layer Buffer, a gate insulating layer GI, a passivation layer PVX, a shielding layer LS, an active layer AL, a gate metal layer Gate, a source / drain metal layer SD, and an interlayer dielectric layer ILD. Among these backplane film layers, some backplane film layers are continuous whole-layer laid film layers, some backplane film layers are patterned film layers, some backplane film layers are only located in the display area, some backplane film layers extend from the display area to the peripheral area, and some backplane film layers include a part located in the display area and a part located in the peripheral area, and these two parts are separated.

[0075] Among them, the gate metal layer Gate, the source / drain metal layer SD, and the shielding layer LS are conductive film layers, and the materials of these conductive film layers are, for example, aluminum (Al), silver (Ag), copper (Cu), or chromium (Cr), etc. The gate insulating layer GI, the interlayer dielectric layer ILD, and the passivation layer PVX are insulating film layers, and the materials of these insulating film layers are, for example, silicon oxide, silicon nitride, or silicon oxynitride, etc.

[0076] In some examples, the above multi-layer backplane film layer may include a plurality of pixel driving circuits 1121 arranged in an array. The pixel driving circuit 1121 includes a plurality of transistors TFT. The pixel driving circuit 1121 is electrically connected to the light-emitting device 130 and is used to drive the light-emitting device 130 to emit light. For example, the pixel driving circuit 1121 can generate a driving current. Each light-emitting device 130 can emit light under the driving action of the driving current generated by the corresponding pixel driving circuit 1121. At this time, the pixel driving circuit 1121 adopts TFT technology, and the light-emitting substrate 100 can be called an active driving light-emitting substrate (for example, an active driving QLED light-emitting substrate, an AMQLED light-emitting substrate).

[0077] In some embodiments, the plurality of light-emitting devices 130 include a blue light-emitting device, a red light-emitting device, and a green light-emitting device. At this time, the light-emitting substrate 100 can be used for full-color display. By respectively adjusting the brightness (gray scale) of the blue light-emitting device, the red light-emitting device, and the green light-emitting device, various colors of display can be achieved through color combination and superposition.

[0078] In some embodiments, as Figure 2 and Figure 3 shown, the light-emitting device 130 includes a light-emitting functional layer 131. In the case where the light-emitting substrate 100 includes a plurality of light-emitting devices 130, the light-emitting substrate 100 includes a plurality of light-emitting functional layers 131. The plurality of light-emitting functional layers 131 are disposed on the substrate 110, and one light-emitting functional layer 131 is located within one pixel opening Q.

[0079] In some embodiments, the light-emitting device 130 further includes a first electrode 132 and a second electrode 133 that are oppositely disposed along the first direction X. The first electrode 132 is closer to the substrate 110 than the second electrode 133.

[0080] Exemplarily, the sum of the dimensions of the light-emitting functional layer 131, the first electrode 132, and the second electrode 133 along the first direction X may be 100 nm to 200 nm, such as 100 nm, 110 nm, 120 nm, 130 nm, 145 nm, 160 nm, 180 nm, 190 nm, or 200 nm, etc.

[0081] In some examples, as Figure 2 and Figure 3 shown, the first electrode 132 is an anode and the second electrode 133 is a cathode; in some other examples, the first electrode 132 is a cathode and the second electrode 133 is an anode.

[0082] In some examples, according to the light emission direction, the light-emitting substrate 100 can be divided into a top-emission type light-emitting substrate, a bottom-emission type light-emitting substrate, and a double-sided emission type light-emitting substrate.

[0083] Among them, in the top-emission type light-emitting substrate, the light emitted by the light-emitting functional layer 131 exits from the side away from the substrate 110. At this time, the first electrode 132 can be an opaque reflective electrode, and the second electrode 133 can be a transparent electrode or a semi-transparent electrode.

[0084] In the bottom-emission type light-emitting substrate, the light emitted by the light-emitting functional layer 131 exits from the side of the substrate 110. At this time, the first electrode 132 can be a transparent electrode or a semi-transparent electrode, and the second electrode 133 can be an opaque reflective electrode.

[0085] In the double-sided emission type light-emitting substrate, the light emitted by the light-emitting functional layer 131 can exit from both the side away from the substrate 110 and the side of the substrate 110, enabling the light-emitting substrate 100 to have the function of double-sided display. Among them, since the light needs to exit in two directions, both the first electrode 132 and the second electrode 133 can be set as transparent electrodes or semi-transparent electrodes.

[0086] In some examples, as Figure 2 and Figures 4A - 4E shown, the light-emitting substrate 100 further includes a packaging structure 140, and the packaging structure 140 is located on the side of the pixel defining layer 120 and the plurality of light-emitting functional layers 131 away from the substrate 110.

[0087] Exemplarily, as Figures 4A - 4EAs shown, the encapsulation structure 140 may include a first encapsulation layer 141 and a second encapsulation layer 142 arranged in a direction away from the substrate 110. The material of the first encapsulation layer 141 is, for example, an inorganic material, and the material of the second encapsulation layer 142 is, for example, an organic material.

[0088] Exemplarily, as Figure 4D and Figure 4E shown, the encapsulation structure 140 may include a third encapsulation layer 143 located on a side of the second encapsulation layer 142 away from the first encapsulation layer 141. The material of the third encapsulation layer 143 is, for example, an inorganic material.

[0089] It should be understood that in the case where the light-emitting device 130 includes the second electrode 133, the encapsulation structure 140 may be located on a side of the plurality of second electrodes 133 away from the substrate 110.

[0090] It can be understood that through the above arrangement, the encapsulation structure 140 can cover the light-emitting device 130 (including the light-emitting functional layer 131), wrap the light-emitting device 130, so as to prevent moisture and oxygen in the external environment from entering the light-emitting substrate 100 and damaging the materials (such as organic materials) in the light-emitting device 130, resulting in a shortened lifespan of the QLED light-emitting substrate or the OLED light-emitting substrate.

[0091] In some embodiments, as Figure 3 shown, the light-emitting functional layer 131 includes a plurality of functional film layers. The plurality of functional film layers include a light-emitting layer 1311. During operation, voltages are respectively applied to the first electrode 132 and the second electrode 133 to generate an electric field therebetween, which can drive holes from the anode and electrons from the cathode to recombine in the light-emitting layer, thereby emitting light.

[0092] It should be noted that Figure 3 is a simplified schematic diagram obtained after removing other film layers in the light-emitting substrate 100 except for the film layers related to the light-emitting device 130.

[0093] Exemplarily, the light-emitting layer 1311 is a quantum dot light-emitting layer. In this case, the material of the light-emitting layer 1311 may include quantum dots, and the quantum dots may be one or more arbitrary combinations of CdS, CdSe, ZnSe, ZnTeSe, InP, PbS, CsPbCl3, CsPbBr3, CsPbI3, CdS / ZnS, CdSe / ZnS, ZnSe, ZnSeTe, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, CsPbI3 / ZnS, CdS / ZnSeS / ZnS, CdSe / ZnSeS / ZnS, ZnSe / ZnSeS / ZnS, ZnSeTe / ZnSeS / ZnS, InP / ZnS, PbS / ZnS, CsPbCl3 / ZnS, CsPbBr3 / ZnS, and CsPbI3 / ZnS. Moreover, the shape of the quantum dots includes, but is not limited to, geometric shapes such as spherical, ellipsoidal, polyhedral, rod-shaped, cross-shaped, or annular.

[0094] In some embodiments, as Figure 3 shown, to improve the light-emitting efficiency of the light-emitting device 130, the multiple functional film layers further include a hole transport functional layer, which is located between the light-emitting layer 1311 and the anode. The hole transport functional layer includes, for example, at least one of a hole injection layer 1312 (Hole Inject Layer, HIL), a hole transport layer 1313 (Hole Transport Layer, HTL), and an electron blocking layer (Electron Blocking Layer, EBL).

[0095] In some embodiments, as Figure 3 shown, to improve the light-emitting efficiency of the light-emitting device 130, the multiple functional film groups further include an electron transport functional layer, which is located between the light-emitting layer 1311 and the cathode. The electron transport functional layer includes, for example, at least one of a stacked electron injection layer 1314 (Electron Inject Layer, EIL), an electron transport layer 1315 (Electron Transport Layer, ETL), and a hole blocking layer (Hole Blocking Layer, EBL).

[0096] As described in the background, QLEDs have been attracting more and more extensive attention and research. The construction of high-efficiency and high-brightness devices is a prerequisite for productization. Therefore, the development of high-efficiency QLED light-emitting substrates is becoming increasingly urgent. Although researchers have been committed to the development and optimization of QLED materials, due to the synthesis complexity and limitations of quantum dot materials, the efficiency improvement is relatively limited, and it is difficult to achieve a substantial increase in the efficiency of QLED light-emitting substrates in the short term.

[0097] In some implementations, in a top-emitting light-emitting substrate, among the light rays emitted by the light-emitting functional layer 131, there are forward light rays (hereinafter simply referred to as forward-emitted light rays) that are directed towards the light-emitting opening of the pixel opening Q (i.e., the port of the pixel opening Q that is far from the substrate 110), and there are also large-angle light rays (hereinafter simply referred to as lateral-emitted light rays) that are directed towards the sidewalls of the pixel opening Q. Among them, the lateral-emitted light rays may be absorbed or may be reflected in a direction deviating from the pixel opening, making the lateral-emitted light rays unable to become part of the effective emitted light rays of the light-emitting substrate, resulting in a reduction in the light extraction efficiency of the light-emitting substrate. Moreover, when the light-emitting substrate includes light-emitting devices that emit light rays of different colors, and the lateral-emitted light rays are reflected in a direction deviating from the pixel opening Q, optical crosstalk may be formed between the light rays emitted by adjacent light-emitting devices, affecting the color purity of the light rays emitted by the light-emitting substrate.

[0098] Based on this, some embodiments of the present disclosure provide a light-emitting substrate 100 to solve at least one of the above technical problems. As Figures 4A - 4E 、 Figure 5A 、 Figure 5B 、 Figure 6A and Figure 6B shown, the light-emitting substrate 100 includes a plurality of light extraction layers 150. One light extraction layer 150 is disposed within one pixel opening Q and covers the sidewalls of the pixel opening Q; the light extraction layer 150 is configured to reflect the part of the light rays emitted by the light-emitting functional layer 131 that are directed towards the light extraction layer 150. The surface 150a (hereinafter simply referred to as the first surface 150a) of the light extraction layer 150 that is far from the sidewall of the pixel opening Q is recessed in a direction away from the center C of the pixel opening Q.

[0099] The above-mentioned first surface 150a is recessed in a direction away from the center C of the pixel opening Q; among them, the center C of the pixel opening Q can be understood as follows: the contour of the pixel opening Q is a three-dimensional geometric figure, and the center C of the pixel opening Q can be the geometric center of this three-dimensional geometric figure. Here, for the center C of the pixel opening Q, some embodiments of the present disclosure provide a possible obtaining method. A selected cross-section parallel to the substrate 110 of the pixel opening Q can be made, so that the distance between the selected cross-section and one end face of the pixel opening Q is equal to the distance between the selected cross-section and the other end face of the pixel opening Q; the geometric center of the selected cross-section is the center C of the pixel opening Q. It should be understood that the center C of the pixel opening Q can also be obtained by other feasible methods, which will not be elaborated here.

[0100] It should be noted that there is no limitation on the direction of the first surface 150a away from the center C of the pixel opening Q. For example, as Figure 4A shown, the direction of the first surface 150a away from the center C of the pixel opening Q can be parallel or substantially parallel to the substrate 110; or, asFigure 5A As shown, the direction in which the first surface 150a is away from the center C of the pixel opening Q can be the direction from the center C of the pixel opening Q to the substrate 110; or, as Figure 6A shown, the direction in which the first surface 150a is away from the center C of the pixel opening Q can be the direction from the center C of the pixel opening Q away from the substrate 110.

[0101] Understandably, when the light extraction layer 150 covers the sidewall of the pixel opening Q, the laterally emitted light rays emitted by the light-emitting functional layer 131 can be reflected at the light extraction layer 150. When the first surface 150a is recessed in the direction away from the center C of the pixel opening Q, after the laterally emitted light rays are reflected by the light extraction layer 150, they can converge in the direction close to the pixel opening Q and exit from the light exit opening of the pixel opening Q, forming a part of the effective light rays. In other words, the concave shape of the first surface 150a has a good effect on the convergence of the laterally emitted light rays, which can improve the light condensing effect of the light extraction layer 150. In this way, firstly, the light extraction efficiency of the light-emitting substrate 100 can be improved, making the efficiency of the light-emitting substrate 100 increased; secondly, it can prevent optical crosstalk from occurring between the light rays emitted by adjacent light-emitting functional layers 131, making the color purity of the light rays emitted by the light-emitting substrate 100 relatively high.

[0102] Here, there is no limitation on the method of forming the concave shape of the first surface 150a. For example, an initial light extraction layer can be formed inside the pixel opening Q, and the initial light extraction layer can be etched to form the light extraction layer 150, so that the first surface 150a of the light extraction layer 150 is recessed in the direction away from the center C of the pixel opening Q. In this case, the morphology of the sidewall of the pixel opening Q and the morphology of the first surface 150a can be different, that is, the sidewall of the pixel opening Q can be non-recessed. For another example, the morphology of the structure adjacent to the light extraction layer 150 can be controlled, and the light extraction layer 150 can be made to continue the morphology of this structure to control the morphology of the light extraction layer 150. The above structure adjacent to the light extraction layer 150 is, for example, the pixel definition layer 120. The following gives an example of the latter case.

[0103] To prove the influence of the morphology of the pixel definition layer on the morphology of the adjacent film layer, Figure 16 is used for auxiliary explanation. Figure 16 In, the sidewall cross-sectional shape of the pixel definition layer PDL-1 is U-shaped. When the material of the subsequent film layer T is deposited on the pixel definition layer PDL-1, the subsequent film layer T will continue the morphology of the sidewall of the pixel definition layer PDL-1. As Figure 15 shown, the cross-sectional shape of the subsequent film layer T can continue the sidewall cross-sectional shape of the pixel definition layer PDL-1, making the cross-sectional shape of the subsequent film layer T U-shaped. It should be noted that Figure 16This is only for assisting in explaining the influence of the morphology of the pixel defining layer on the morphology of adjacent film layers, Figure 16 and the morphology of the pixel defining layer in Figure 16 does not impose any limitation on the morphology of the pixel defining layer in the embodiments of the present disclosure.

[0104] In the case where the morphology of the pixel defining layer can control the morphology of adjacent film layers, in some embodiments, such as Figures 4A - 4E , Figure 5A , Figure 5B , Figure 6A and Figure 6B shown, the sidewall of the pixel opening Q is recessed in a direction away from the center C of the pixel opening Q; the light extraction layer 150 follows the morphology of the sidewall of the pixel opening Q.

[0105] It should be noted that there is no limitation on the direction in which the sidewall of the pixel opening Q is away from the center C of the pixel opening Q. Here, for the exemplary description of the direction in which the sidewall of the pixel opening Q is away from the center C of the pixel opening Q, reference can be made to the exemplary introduction of the direction in which the first surface 150a is away from the center C of the pixel opening Q in the foregoing part, and details will not be elaborated here.

[0106] Here, the light extraction layer 150 follows the morphology of the sidewall of the pixel opening Q, which can be understood as that the surface of the light extraction layer 150 close to the sidewall of the pixel opening Q and the morphological change of the first surface 150a are the same as the morphological change of the sidewall of the pixel opening Q; for example, when the sidewall of the pixel opening Q is recessed in a direction away from the center C of the pixel opening Q, the surface of the light extraction layer 150 close to the sidewall of the pixel opening Q is recessed in a direction away from the center C of the pixel opening Q, and the first surface 150a is recessed in a direction away from the center C of the pixel opening Q.

[0107] It can be understood that when the sidewall of the pixel opening Q is recessed in a direction away from the center C of the pixel opening Q and the light extraction layer 150 follows the morphology of the sidewall of the pixel opening Q, the first surface 150a can be recessed in a direction away from the center C of the pixel opening Q. Thus, as described above, the light condensing effect of the light extraction layer 150 can be improved. First, the light extraction efficiency of the light emitting substrate 100 can be increased, and second, optical crosstalk between the light emitted by adjacent light emitting functional layers 131 can be prevented.

[0108] In some examples, when the sidewall of the pixel opening Q of the pixel defining layer 120 is recessed in a direction away from the center C of the pixel opening Q, the electron micrograph of the pixel defining layer is as shown in Figure 7 (b) in. In contrast, in some implementation manners, when the pixel opening D-Q of the pixel defining layer D-PDL is trapezoidal in reverse and the sidewall of the pixel opening D-Q is not recessed in a direction away from the center of the pixel opening D-Q, the electron micrograph of the pixel defining layer D-PDL is as shown in Figure 7as shown in (a) of

[0109] In some examples, a contrast film layer DL is formed on one side of the above-mentioned pixel definition layer D-PDL, so that the contrast film layer DL follows the morphology of the side wall of the pixel opening D-Q, and respectively schematically shows the reflection path of the lateral outgoing light L1 by the light extraction layer 150 and the reflection path of the lateral outgoing light L1 by the contrast film layer DL. The result is as Figure 8 shown. Among them, when the lateral outgoing light L1 is reflected by the light extraction layer 150, the tangent of the first surface 150a is the total reflection interface. From Figure 8 it can be seen that the lateral outgoing light L1 can be reflected at the first surface 150a and converted into a first reflected light L2. The first reflected light L2 can be emitted from the pixel opening Q and constitute a part of the effective outgoing light. The lateral outgoing light L1 can be reflected at the contrast film layer DL and converted into a second reflected light L3. The second reflected light L3 cannot be emitted from the pixel opening Q and cannot constitute a part of the effective outgoing light. It shows that when the side wall of the pixel opening Q is recessed in the direction away from the center C of the pixel opening Q; when the light extraction layer 150 follows the morphology of the side wall of the pixel opening Q, the light extraction layer 150 has a good cohesive effect on the lateral outgoing light, can effectively reduce the emission of large-angle light, improve the light extraction efficiency, and can reduce optical crosstalk.

[0110] In some examples, the light extraction layer 150 is in contact with the side wall of the pixel opening Q. At this time, the surface of the light extraction layer 150 close to the side wall of the pixel opening Q fits with the side wall of the pixel opening Q.

[0111] In still other examples, other film layer structures are further provided between the light extraction layer 150 and the side wall of the pixel opening Q. The following will exemplarily illustrate this situation.

[0112] In some embodiments, as Figures 4A - 4E , Figure 5A , Figure 5B , Figure 6A and Figure 6B shown, the light-emitting functional layer 131 includes at least one common film layer 131G, and the common film layers 131G in multiple pixel openings Q are connected. The part of the common film layer 131G covering the side wall of the pixel opening Q is located between the pixel definition layer 120 and the light extraction layer 150 and follows the morphology of the side wall of the pixel opening Q; the light extraction layer 150 follows the morphology of the part of the common film layer 131G covering the side wall of the pixel opening Q.

[0113] Here, regarding the understanding of the morphology of the sidewall of the covering pixel opening Q of the common film layer 131G, which partially continues the sidewall of the pixel opening Q, and the understanding of the morphology of the part of the light extraction layer 150 that continues the sidewall of the covering pixel opening Q of the common film layer 131G, reference can be made to the foregoing description of the morphology of the light extraction layer 150 that continues the sidewall of the pixel opening Q, and details are not repeated here.

[0114] In some embodiments, the common film layer 131G can be any one of a hole injection layer 1312, a hole transport layer 1313, an electron injection layer 1314, and an electron transport layer 1315.

[0115] In some examples, the common film layer 131G further includes a part on the side of the pixel defining layer 120 away from the substrate 110. The common film layer 131G in multiple pixel openings Q can be connected through the common film layer 131G on the side of the pixel defining layer 120 away from the substrate 110. In this case, the common film layer 131G has a structure that is integrally connected throughout the layer.

[0116] It can be understood that when the light-emitting functional layer 131 includes at least one common film layer 131G, the formation process of the light-emitting functional layer 131 can be simplified, and the preparation method of the light-emitting substrate 100 can be simplified.

[0117] In some examples, the second electrodes 133 of multiple light-emitting devices 130 are connected to form a second electrode layer, and the second electrode layer has a structure that is integrally connected throughout the layer, that is, the second electrode 133 is a common electrode shared by multiple light-emitting devices 130. In this case, the second electrode layer can be located between the common film layer 131G and the light extraction layer 150. The part of the second electrode layer on the side of the sidewall of the pixel opening Q covers the common film layer 131G and continues the morphology of the common film layer 131G; the light extraction layer 150 continues the morphology of the second electrode layer on the side of the sidewall of the pixel opening Q.

[0118] In some embodiments, as Figure 4B 、 Figure 5B and Figure 6B shown, the cross-section of the pixel opening Q perpendicular to the substrate 110 has a selected intersection line K with the pixel defining layer 120. The tangent line K' of the selected intersection line K forms a selected angle α with the reference plane 120a; the reference plane 120a is the surface of the pixel defining layer 120 close to the substrate 110. The selected angle corresponding to the end point K1 of the selected intersection line K close to the substrate 110 is A1; the selected angle corresponding to the end point K2 of the selected intersection line K away from the substrate 110 is A2.

[0119] In some examples, when the first surface 150a is recessed in a direction away from the center C of the pixel opening Q, the selected intersection line K is a curve recessed in a direction away from the center C of the pixel opening Q, and moreover, the selected angles α corresponding to the points on the selected intersection line K are not the same, and the values of the selected angle α change continuously. The change of the selected angle α will be exemplarily described below.

[0120] In some examples, as Figure 4B shown, along the direction away from the substrate 110, the selected angle α first gradually increases and then gradually decreases, and A1 is greater than or equal to 20° and less than 90°.

[0121] Exemplarily, when along the direction away from the substrate 110, the selected angle α first gradually increases and then gradually decreases, A1 can be 20°, 30°, 40°, 50°, 65°, 80° or 85°, etc.

[0122] It should be understood that when along the direction away from the substrate 110, the selected angle α first gradually increases and then gradually decreases, there is a maximum value for the selected angle α, and this maximum value can be 90°.

[0123] In some examples, as Figure 5B shown, along the direction away from the substrate 110, the selected angle α gradually increases, and A1 is greater than or equal to 5° and less than 90°, and A2 is greater than 5° and less than or equal to 90°.

[0124] Exemplarily, when along the direction away from the substrate 110, the selected angle α gradually increases, A1 can be 5°, 10°, 16°, 20°, 30°, 40°, 50° or 80°, etc.

[0125] Exemplarily, when along the direction away from the substrate 110, the selected angle α gradually increases, A2 can be 10°, 18°, 20°, 30°, 40°, 50°, 80° or 90°, etc. Among them, A2 can be 90°, that is to say, the tangent line at the end point K2 of the selected intersection line K away from the substrate 110 can be perpendicular to the reference plane 120a.

[0126] In some examples, as Figure 6B shown, along the direction away from the substrate 110, the selected angle α gradually decreases, and A1 is less than or equal to 90°, and A2 is greater than or equal to 0° and less than 90°.

[0127] Exemplarily, when the selected angle α gradually decreases in the direction away from the substrate 110, A1 can be 20°, 35°, 50°, 60°, 70°, 80°, 90°, etc. Among them, A1 can be 90°, that is to say, the tangent line at the end point K1 of the selected boundary line K close to the substrate 110 can be perpendicular to the reference plane 120a.

[0128] Exemplarily, when the selected angle α gradually decreases in the direction away from the substrate 110, A2 can be 0°, 5°, 10°, 15°, 20°, 30°, 40°, 50°, 80°, etc. Among them, A2 can be 0°, that is to say, the tangent line at the end point K2 of the selected boundary line K away from the substrate 110 can be parallel to the reference plane 120a.

[0129] In some embodiments, as Figure 4A 、 Figures 4C - 4E 、 Figure 5A and Figure 6A shown, a plurality of light extraction layers 150 located within a plurality of pixel openings Q are connected; the plurality of light extraction layers 150 are multiplexed as a portion of the encapsulation structure 140 close to the substrate.

[0130] In some examples, the material of the light extraction layer 150 is also distributed on the pixel definition layer 120 and on the side of the light-emitting functional layer 131 away from the substrate 110. The light extraction layers 150 within the plurality of pixel openings Q can be connected by the material of the light extraction layer 150 located on the pixel definition layer 120 and on the side of the light-emitting functional layer 131 away from the substrate 110. In this case, the light extraction layer 150 is a structure with a continuous whole layer.

[0131] Exemplarily, as Figure 4A 、 Figures 4C - 4E 、 Figure 5A and Figure 6A shown, the plurality of light extraction layers 150 are multiplexed as the first encapsulation layer 141 of the encapsulation structure 140.

[0132] It can be understood that by setting like this, on the basis of improving the efficiency of the light-emitting substrate 100 and reducing optical crosstalk, the structure of the light-emitting substrate 100 can be simplified, and the manufacturing method of the light-emitting substrate 100 can be simplified.

[0133] In some embodiments, as Figures 4A - 4E 、 Figure 5A 、 Figure 5B 、 Figure 6A and Figure 6BAs shown, the light-emitting substrate 100 further includes a plurality of auxiliary extraction structures 160. One auxiliary extraction structure 160 covers one side of the side wall of a light extraction layer 150 away from the pixel opening Q and is in contact with the light extraction layer 150. The refractive index of the material of the auxiliary extraction structure 160 is greater than the refractive index of the material of the light extraction layer 150.

[0134] Understandably, when the auxiliary extraction structure 160 is in contact with the light extraction layer 150 and the refractive index of the material of the auxiliary extraction structure 160 is greater than the refractive index of the material of the light extraction layer 150, the interface between the auxiliary extraction structure 160 and the light extraction layer 150 is an interface from a high-refractive-index material to a low-refractive-index material. Such an interface has total reflection optical characteristics and can achieve total reflection performance. Therefore, through the above settings, the reflection performance at the first surface 150a can be improved, so that the laterally emitted light can be totally reflected back into the pixel opening Q and emitted from the light exit of the pixel opening Q to form a part of the effective light.

[0135] Here, there is no limitation on the difference between the refractive index of the material of the auxiliary extraction structure 160 and the refractive index of the material of the light extraction layer 150.

[0136] In some embodiments, the difference between the refractive index of the material of the auxiliary extraction structure 160 and the refractive index of the material of the light extraction layer 150 is greater than or equal to 0.1.

[0137] Exemplarily, the difference between the refractive index of the material of the auxiliary extraction structure 160 and the refractive index of the material of the light extraction layer 150 can be 0.1, 0.2, 0.35, 0.4, 0.6, 0.8, 1.0 or 2.0.

[0138] Understandably, through the above settings, a larger difference between the refractive index of the material of the auxiliary extraction structure 160 and the refractive index of the material of the light extraction layer 150 can improve the total reflection performance of the interface between the auxiliary extraction structure 160 and the light extraction layer 150. Thus, the reflection performance at the first surface 150a can be improved, and the light extraction efficiency of the light-emitting substrate 100 can be increased.

[0139] In some embodiments, as Figure 4A 、 Figures 4C - 4E 、 Figure 5A and Figure 6A shown, in the case where a plurality of light extraction layers 150 are multiplexed as a part of the encapsulation structure 140 close to the substrate 110, the plurality of auxiliary extraction structures 160 provided in the plurality of pixel openings Q are connected, and the plurality of auxiliary extraction structures 160 are multiplexed as a part of the encapsulation structure 140.

[0140] In some examples, when the material of the light extraction layer 150 is also distributed on the side of the pixel defining layer 120 away from the substrate 110, the material of the auxiliary extraction structure 160 can be distributed on one side of the material of this part of the light extraction layer 150, that is, the material of the light extraction layer 150 and the material of the auxiliary extraction structure 160 can be sequentially disposed on the pixel defining layer 120. The auxiliary extraction structures 160 in the plurality of pixel openings Q can be connected through the material of the auxiliary extraction structure 160 located on the side of the pixel defining layer 120 away from the substrate 110. In this case, the auxiliary extraction structure 160 is a structure that is connected throughout the layer.

[0141] In some examples, such as Figure 4A 、 Figures 4C - 4E 、 Figure 5A and Figure 6A shown, the surface of the above-mentioned auxiliary extraction structure 160 that is connected throughout the layer and away from the substrate 110 is parallel to the substrate 110. That is to say, the above-mentioned auxiliary extraction structure 160 that is connected throughout the layer can be a flat layer structure.

[0142] Exemplarily, such as Figure 4A 、 Figures 4C - 4E 、 Figure 5A and Figure 6A shown, a plurality of auxiliary extraction structures 160 are multiplexed as the second encapsulation layer 142 of the encapsulation structure 140.

[0143] It can be understood that by setting like this, on the basis of improving the efficiency of the light-emitting substrate 100 and reducing optical crosstalk, the structure of the light-emitting substrate 100 can be simplified, and the manufacturing method of the light-emitting substrate 100 can be simplified.

[0144] Hereinafter, the material and structure of the auxiliary extraction structure 160 will be introduced exemplarily.

[0145] In some embodiments, the material of the auxiliary extraction structure 160 includes a combination of one or both of modified acrylic acid and modified epoxy resin.

[0146] By modifying acrylic acid, the refractive index of acrylic acid can be increased; by modifying epoxy resin, the refractive index of epoxy resin can be increased. Through the above settings, the material of the auxiliary extraction structure 160 can have a high refractive index and certain encapsulation performance, and can improve the encapsulation performance of the light-emitting substrate 100 on the basis of enhancing the reflection performance at the first surface 150a.

[0147] In some embodiments, such as Figure 9As shown, the material of the auxiliary extraction structure 160 includes a base material M and functional nanoparticles N mixed in the base material M; the base material M includes one or a combination of two of acrylic acid and epoxy resin; the functional nanoparticles N are used to increase the refractive index of the material of the auxiliary extraction structure.

[0148] By providing that the material of the auxiliary extraction structure 160 includes the base material M, and the base material M includes one or a combination of two of acrylic acid and epoxy resin, the auxiliary extraction structure 160 can achieve the encapsulation function. By providing that the material of the auxiliary extraction structure 160 includes the functional nanoparticles N, the functional nanoparticles N can be used as doped high-refractive-index particles, so that the material of the auxiliary extraction structure 160 has a relatively high refractive index. In this way, the reflection performance at the first surface 150a can be improved, and the encapsulation performance of the light-emitting substrate 100 can be improved.

[0149] In some embodiments, as Figure 9 shown, the functional nanoparticles N include one or a combination of two of zirconia and titania.

[0150] The above-mentioned functional nanoparticles N can increase the refractive index of the material of the auxiliary extraction structure 160, and have the advantages of being easy to obtain and easy to disperse.

[0151] In some embodiments, as Figure 10 shown, the auxiliary extraction structure 160 includes at least two auxiliary extraction layers 161 arranged in sequence along the direction away from the light extraction layer 150; among two adjacent auxiliary extraction layers 161, the refractive index of the material of the auxiliary extraction layer 161 relatively closer to the light extraction layer 150 is less than the refractive index of the material of the auxiliary extraction layer 161 relatively farther away from the light extraction layer 150.

[0152] Through the above setting, a total reflection effect can be formed at the interface between two adjacent auxiliary extraction layers 161. In this way, the lateral emission light emitted by the light-emitting functional layer 131 can be totally reflected at multiple total reflection interfaces, which can improve the reflection effect on these lateral emission lights and improve the light extraction efficiency of the light-emitting substrate 100.

[0153] For example, as Figure 10As shown, the auxiliary extraction structure 160 includes a first auxiliary extraction layer 161A and a second auxiliary functional layer 161B arranged in sequence along the direction away from the light extraction layer 150; the refractive index of the material of the first auxiliary extraction layer 161A (for example, 1.70) is less than the refractive index of the material of the second auxiliary functional layer 161B (for example, 1.75). In this case, the lateral emitted light rays emitted by the light-emitting functional layer 131 can be totally reflected at the interface between the first auxiliary extraction layer 161A and the second auxiliary functional layer 161B, and at the interface between the first auxiliary extraction layer 161A and the light extraction layer 150, which can improve the reflection effect on these lateral emitted light rays and enhance the light extraction efficiency of the light-emitting substrate 100.

[0154] In some embodiments, the material of the light extraction layer 150 includes silicon oxide and / or silicon oxynitride.

[0155] In some examples, the material of the light extraction layer 150 includes silicon oxide (SiOx); in still other examples, the material of the light extraction layer 150 includes silicon oxynitride (SiONx); in still other examples, the material of the light extraction layer 150 includes silicon oxide and silicon oxynitride.

[0156] It should be noted that when the material of the light extraction layer 150 includes silicon oxide and silicon oxynitride, there is no limitation on the ratio (for example, mass ratio) of silicon oxide and silicon oxynitride in the material of the light extraction layer 150.

[0157] In some examples, when the material of the light extraction layer 150 includes silicon oxide and / or silicon oxynitride, the light extraction layer 150 can play a passivation role and can also be called a passivation layer (Passivation layer).

[0158] It can be understood that, on the one hand, when the material of the light extraction layer 150 includes silicon oxide and / or silicon oxynitride, the material of the light extraction layer 150 may not include hydrogen ions (H + ), in this way, the introduction of hydrogen ions (H + ) can be reduced, and the introduction of hydrogen ions (H +) The introduction of has an impact on the pixel driving circuit 1121. For example, it can prevent the phenomenon of negative shift of Vth in the oxide thin-film transistor (Oxide TFT) in the pixel driving circuit 1121. On the other hand, when the material of the light extraction layer 150 includes silicon oxide and / or silicon oxynitride, the material of the light extraction layer 150 has high density and good anti-corrosion performance, which can prevent water vapor and oxygen in the external environment from contacting the material of the light-emitting functional layer 131 and damaging the material of the light-emitting functional layer 131. In other words, through the above settings, the light extraction layer 150 can be reused as the first encapsulation layer 141, improving the encapsulation performance of the light-emitting substrate 100.

[0159] In some embodiments, the refractive index of the material of the light extraction layer 150 ranges from 1.45 to 1.75.

[0160] Exemplarily, when the material of the light extraction layer 150 includes silicon oxide (SiOx), the refractive index of the material of the light extraction layer 150 can range from 1.45 to 1.55.

[0161] Exemplarily, when the material of the light extraction layer 150 includes silicon oxynitride (SiONx), the refractive index of the material of the light extraction layer 150 can range from 1.65 to 1.75.

[0162] Exemplarily, the refractive index of the material of the light extraction layer 150 can be 1.45, 1.51, 1.55, 1.60, 1.65, 1.70 or 1.75, etc.

[0163] In some embodiments, as Figure 4A 、 Figure 5A and Figure 6A shown, the average thickness D1 of the light extraction layer 150 is less than or equal to 1 μm.

[0164] Here, the thickness D1 of the light extraction layer 150 can be understood as follows: the light extraction layer 150 is a thin-film structure with two relatively arranged surfaces, and the distance between these two surfaces is the thickness D1 of the light extraction layer 150; or, it can also be understood that the dimension perpendicular to the surface of this thin-film structure is the thickness D1 of the light extraction layer 150.

[0165] Exemplarily, the average thickness D1 of the light extraction layer 150 can be 10 nm, 50 nm, 100 nm, 300 nm, 500 nm, 640 nm, 800 nm or 1 μm.

[0166] When the average thickness of the light extraction layer 150 is less than or equal to 1 μm, on the basis of ensuring the light extraction effect and encapsulation effect of the light extraction layer 150, the overall thickness of the light-emitting substrate 100 can be made smaller, which is conducive to realizing the thinning and lightening of the light-emitting substrate 100.

[0167] In some embodiments, such as Figure 4A , Figure 5A and Figure 6A shown, the size D2 of the pixel definition layer 120 in the thickness direction of the substrate 110 (i.e., the first direction X) ranges from 0.5 μm to 1.8 μm.

[0168] Exemplarily, the size D2 of the pixel definition layer 120 in the thickness direction of the substrate 110 can be 0.5 μm, 0.65 μm, 0.8 μm, 1.0 μm, 1.2 μm, 1.7 μm or 1.8 μm.

[0169] It can be understood that when the size D2 of the pixel definition layer 120 in the thickness direction of the substrate 110 ranges from 0.5 μm to 1.8 μm, the size of the pixel definition layer 120 in the thickness direction of the substrate 110 is relatively large, which can make the size of the pixel opening Q in the thickness direction of the substrate 110 relatively large. First, it is beneficial to accommodate the first electrode 132, the light-emitting functional layer 131 and the second electrode 133 of the light-emitting device 130; second, it can make the distribution range of the light extraction layer 150 relatively large, make the range of the total reflection interface relatively large, so that the lateral emitted light emitted by the light-emitting functional layer 131 can be reflected on the first surface 150a and become part of the effective emitted light after reflection, thereby improving the light extraction efficiency of the light-emitting substrate 100; third, when the lateral emitted light emitted by the light-emitting functional layer 131 is reflected on the first surface 150a, it can prevent optical crosstalk from occurring between the lights emitted by adjacent light-emitting functional layers 131, so that the color purity of the light emitted by the light-emitting substrate 100 is relatively high.

[0170] On the other hand, some embodiments of the present disclosure also provide a method for manufacturing a light-emitting substrate 100. As Figure 11A and Figure 11B shown, the manufacturing method includes S1 to S4.

[0171] S1: Form a substrate 110.

[0172] S2: Form a pixel definition layer 120 on one side of the substrate 110. The pixel definition layer 120 defines a plurality of pixel openings Q.

[0173] S3: Form a plurality of light-emitting functional layers 131 on one side of the substrate 110, and one light-emitting functional layer 131 is located in one of the pixel openings Q.

[0174] Exemplarily, the formed light-emitting functional layer 131 includes one or any combination of a hole injection layer 1312 (see Figure 3 ), a hole transport layer 1313, a light-emitting layer 1311, an electron injection layer 1314, and an electron transport layer 1315. The light-emitting layer 1311 can be a quantum dot light-emitting layer.

[0175] Exemplarily, the process for forming the functional film layer in the light-emitting functional layer 131 can be an evaporation process, a printing process, or a spin coating process.

[0176] S4: Form a plurality of light extraction layers 150. One light extraction layer 150 is disposed within one pixel opening Q and covers the sidewall of the pixel opening Q. The light extraction layer 150 is configured to reflect a portion of the light emitted by the light-emitting functional layer 131 that is directed towards the light extraction layer 150. The surface 150a (i.e., the first surface 150a) of the light extraction layer 150 that is away from the sidewall of the pixel opening Q is recessed in a direction away from the center C of the pixel opening Q (see Figure 4A ).

[0177] It can be understood that the beneficial effects achievable by the preparation method of the above light-emitting substrate 100 are the same as those of the above light-emitting substrate 100, and will not be elaborated here.

[0178] As described above, as a possible way to form the recessed morphology of the first surface 150a, as Figures 4A - 4E , Figure 5A , Figure 5B , Figure 6A , and Figure 6B show, the sidewall of the pixel opening Q can be recessed in a direction away from the center C of the pixel opening Q; and the light extraction layer 150 can follow the morphology of the sidewall of the pixel opening Q. The preparation method corresponding to this way will be described exemplarily below.

[0179] In some embodiments, the material of the pixel definition layer 120 includes a positive photoresist or a negative photoresist. In this case, the process for forming the pixel definition layer 120 can be a wet etching process. In this situation, as Figure 12 and Figure 13 show, forming the pixel definition layer 120 can include S2.1A to S2.5A.

[0180] S2.1A: Form an initial pixel definition layer 120i on one side of the substrate 110.

[0181] Exemplarily, forming the initial pixel definition layer 120i can be a coating process.

[0182] In some examples, before S2.1A, S2.1F is further included.

[0183] S2.1F: Form a patterned first electrode layer on one side of the substrate 110, the first electrode layer including a plurality of first electrodes 132 spaced apart (see Figure 3 ).

[0184] It should be understood that when forming the pixel defining layer 120 including S2.1F, the initial pixel defining layer 120i can be coated on the side of the first electrode layer away from the substrate 110.

[0185] Exemplarily, the process of forming the patterned first electrode layer can be an evaporation process or an etching process.

[0186] In some examples, after S2.1A and before S2.2A, S2.2F is also included.

[0187] S2.2F: Dry the initial pixel defining layer 120i (which can also be referred to as pre-baking).

[0188] S2.2A: Use the mask PR1 to expose the first target area W1 of the initial pixel defining layer 120i.

[0189] In some examples, as Figure 12 shown, the material of the pixel defining layer 120 includes a positive photoresist. At this time, the first target area W1 of the initial pixel defining layer 120i is the area where a plurality of pixel openings Q are formed. In this way, during the development process of S2.4A, the initial pixel defining layer 120i located in the first target area W1 can be removed to form a plurality of pixel openings Q.

[0190] In still other examples, as Figure 13 shown, the material of the pixel defining layer 120 includes a negative photoresist. At this time, the first target area W1 is the other area of the initial pixel defining layer 120i except the area where a plurality of pixel openings Q are formed. In this way, during the development process of S2.4A, the initial pixel defining layer 120i located in the first target area W1 can be retained, and the material of the initial pixel defining layer 120i in the unexposed area (i.e., the area where a plurality of pixel openings Q are formed) is removed, thereby forming a plurality of pixel openings Q.

[0191] S2.3A: Expose the first target area W1 of the initial pixel defining layer 120i. During the process of exposing the first target area W1 of the initial pixel defining layer 120i, control the exposure parameters so that during the development process of the initial pixel defining layer 120i (i.e., S2.4A), the sidewalls of the pixel openings Q are recessed in a direction away from the center of the pixel openings Q.

[0192] S2.4A: Develop the initial pixel defining layer 120i to form a plurality of pixel openings Q.

[0193] Understandably, in S2.3, by controlling the exposure parameters and increasing the exposure amount during the exposure process, an overexposed topography can be formed on the initial pixel definition layer 120i during the development process of the initial pixel definition layer 120i (i.e., S2.4A). That is, the sidewalls of the pixel opening Q can be recessed in a direction away from the center C of the pixel opening Q (see Figure 4A ).

[0194] S2.5A: Dry the developed initial pixel definition layer 120i. The process of drying the developed initial pixel definition layer 120i includes a first stage and a second stage carried out successively, and the drying temperature in the first stage is lower than that in the second stage.

[0195] It should be noted that in addition to the above first stage and second stage, the process of drying the developed initial pixel definition layer 120i may also include other stages, which are not limited here. For example, the process of drying the developed initial pixel definition layer 120i can include a first stage, a second stage, and a third stage carried out in sequence. The drying temperature in the second stage is lower than that in the third stage and higher than that in the first stage.

[0196] Understandably, by setting that the process of drying the developed initial pixel definition layer 120i includes a first stage and a second stage carried out successively, and the drying temperature in the first stage is lower than that in the second stage, a gradient temperature rise during the drying process can be achieved. In this way, it is beneficial to maintain the lithography topography (i.e., the recessed topography) formed during the development of the initial pixel definition layer 120i. That is, the recessed topography of the pixel opening Q can be maintained to achieve the purpose of curing. In this way, the first surface 150a of the light extraction layer 150 can continue the topography of the pixel opening Q and be recessed in a direction away from the center of the pixel opening Q.

[0197] In some examples, the material of the pixel definition layer 120 includes a positive photoresist. The exposure amount in S2.3A is 45 mJ, and the gradient temperature rise method in S2.5A is to maintain at room temperature for 40 min, and then raise the drying temperature to 230 °C and maintain it at 230 °C for 1 h, and the topography of the pixel definition layer 120 as shown in Figure 14 (a) can be obtained.

[0198] In some other examples, on the basis of the above embodiments, the exposure amount is further increased, that is, the exposure amount in S2.3A is greater than 45 mJ, and the topography of the pixel definition layer 120 as shown in Figure 14 (b) can be obtained.

[0199] The above is an exemplary description of the method for forming the pixel defining layer through the wet etching process. The following will be an exemplary description of the method for forming the pixel defining layer through the dry etching process.

[0200] In some embodiments, the forming process of the pixel defining layer 120 can be a dry etching process. In this case, as Figure 15 shown, forming the pixel defining layer 120 may include S2.1B to S2.4B.

[0201] S2.1B: Form an initial pixel defining layer 120ii on one side of the substrate 110.

[0202] Here, for the understanding of forming the initial pixel defining layer 120ii, reference can be made to the description of forming the initial pixel defining layer 120i in the foregoing part, which will not be elaborated here.

[0203] S2.2B: Form a sacrificial layer U on the side of the initial pixel defining layer 120ii away from the substrate 110.

[0204] Exemplarily, the material of the sacrificial layer U can be a positive photoresist or a negative photoresist.

[0205] In some examples, after S2.2B and before S2.3B, S2.3F is further included.

[0206] S2.3F: Dry the sacrificial layer U (which can also be called pre-baking).

[0207] S2.3B: Pattern the sacrificial layer U to expose the second target area W2 of the initial pixel defining layer 120ii.

[0208] In some examples, as Figure 15 shown, the material of the sacrificial layer U includes a positive photoresist. At this time, the mask PR2 can be used to expose the third target area W3 of the sacrificial layer U. Moreover, the third target area W3 of the sacrificial layer U is directly opposite to the second target area W2 of the initial pixel defining layer 120ii, that is, the area for forming a plurality of pixel openings Q. In this way, during the development of the sacrificial layer U, the sacrificial layer U located on the area for forming a plurality of pixel openings Q (i.e., the second target area W2 of the initial pixel defining layer 120ii) can be removed to expose the second target area W2 of the initial pixel defining layer 120ii.

[0209] S2.4B: Use a dry etching process to etch the second target area W2 of the initial pixel defining layer 120ii.

[0210] Understandably, in a first aspect, through a dry etching process, the morphology of the sacrificial layer U can be transferred to the initial pixel definition layer 120ii, thereby forming a concave morphology on the sidewalls of the pixel opening Q. In this way, the first surface 150a of the light extraction layer 150 (see Figure 11B ) can continue the morphology of the pixel opening Q and be recessed in a direction away from the center of the pixel opening Q. In a second aspect, when forming a plurality of pixel openings Q using a dry etching process, there is a wider range of choices for the material of the pixel definition layer 120. In other words, the dry etching process can be matched with more types of materials for the pixel definition layer 120. In a third aspect, compared with the wet etching process, when forming a plurality of pixel openings Q using a dry etching process, relatively conventional equipment in the TFT manufacturing process can be used to achieve it, the introduction of a gradient heating device can be omitted, and the process of forming the pixel definition layer 120 can be simplified.

[0211] The above is an exemplary description of the method for forming the pixel definition layer 120 (i.e., S2). Hereinafter, an exemplary description of the method for forming a plurality of light extraction layers 150 (i.e., S4) will be given.

[0212] In some embodiments, forming a plurality of light extraction layers 160 (i.e., S4), as Figure 11B shown, includes S4A.

[0213] S4A: Using a deposition process, a plurality of light extraction layers 150 are formed on one side of the sidewalls of the plurality of pixel openings Q, so that the light extraction layers 150 continue the morphology of the sidewalls of the pixel openings Q.

[0214] The above deposition process includes, but is not limited to, chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or electroplating process.

[0215] Exemplarily, when the material of the light extraction layer 150 includes silicon oxide, the process for forming a plurality of light extraction layers 150 can be ALD or PECVD.

[0216] Exemplarily, when the material of the light extraction layer 150 includes silicon oxynitride, the process for forming a plurality of light extraction layers 150 can be PECVD.

[0217] In some examples, the multiple light extraction layers 150 formed by a deposition process have a structure that is integrally connected throughout the layer. At this time, the multiple light extraction layers 150 are connected to each other; the multiple light extraction layers 150 can be reused as the first encapsulation layer 141 of the encapsulation structure 140.

[0218] It can be understood that when the process for forming the multiple light extraction layers 150 is a deposition process, the light extraction layer 150 can better follow the morphology of the sidewall of the pixel opening Q, so that the first surface 150a can be recessed in a direction away from the center C of the pixel opening Q (see Figure 4A ).

[0219] In some embodiments, the preparation method further includes S5.

[0220] S5: After S4, a coating process or a fill process is used to form multiple auxiliary extraction structures 160; one auxiliary extraction structure 160 covers one side of the sidewall of a light extraction layer 150 away from the pixel opening Q and is in contact with the light extraction layer 150. The refractive index of the material of the auxiliary extraction structure 160 is greater than the refractive index of the material of the light extraction layer 150.

[0221] It can be understood that through the above process, multiple auxiliary extraction structures 160 can be formed. As described above, the interface between the auxiliary extraction structure 160 and the light extraction layer 150 can achieve total reflection performance. Therefore, through the above settings, the reflection performance at the first surface 150a can be improved, so that the laterally emitted light can be totally reflected back into the pixel opening Q and form a part of the effective light. Moreover, when multiple auxiliary extraction structures 160 are formed by a coating process or a fill process, the multiple auxiliary extraction structures 160 formed can be connected to form an integrally connected structure, so that the multiple auxiliary extraction structures 160 can be reused as the second encapsulation layer 142 of the encapsulation structure 140.

[0222] Exemplarily, when the process for forming the multiple auxiliary extraction structures 160 is a fill process, after S4 and before S5, S5F is further included.

[0223] S5F: A dam is formed on the side of the multiple light extraction layers 150 away from the substrate.

[0224] Through the above settings, the dam can define the boundary of the material of the filled auxiliary extraction structure 160 and enable the material of the filled auxiliary extraction structure 160 to fill the gap between the multiple light extraction layers 150 and the cover plate.

[0225] In some examples, when the preparation method includes S5F, after S5, S5B is further included.

[0226] S5B: The material with the glue frame and the light-emitting substrate 100 of the material of the auxiliary extraction structure 160 and the cover plate 220 are subjected to vacuum pressing, thereby completing the encapsulation and curing of the light-emitting substrate 100.

[0227] In some other examples, the process of forming the plurality of auxiliary extraction structures 160 is a coating process, and after coating the material of the auxiliary extraction structure 160, an auxiliary film group 230 is adhered to the material of the auxiliary extraction structure 160 (see Figure 4C ).

[0228] When the auxiliary film group 230 is a protective film, the light-emitting substrate 100 can be physically protected to prevent the light-emitting substrate 100 from being scratched or damaged.

[0229] As described above, the above is only the specific implementation manner of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure, thinking of changes or substitutions, should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A light-emitting substrate, characterized in that, Comprising: A substrate; A pixel defining layer disposed on the substrate; The pixel defining layer defines a plurality of pixel openings; A plurality of light-emitting functional layers disposed on the substrate; One of the light-emitting functional layers is located within one of the pixel openings; And, A plurality of light extraction layers; one of the light extraction layers is disposed within one of the pixel openings and covers the sidewall of the pixel opening; the light extraction layer is configured to reflect a part of the light emitted by the light-emitting functional layer that is directed towards the light extraction layer; the surface of the sidewall of the light extraction layer that is away from the pixel opening is recessed in a direction away from the center of the pixel opening.

2. The light-emitting substrate according to claim 1, wherein The sidewall of the pixel opening is recessed in a direction away from the center of the pixel opening; the light extraction layer continues the morphology of the sidewall of the pixel opening.

3. The light-emitting substrate according to claim 2, wherein The light-emitting functional layer includes at least one common film layer, and the common film layers within the plurality of pixel openings are connected; the portion of the common film layer that covers the sidewall of the pixel opening is located between the pixel defining layer and the light extraction layer and continues the morphology of the sidewall of the pixel opening; The light extraction layer continues the morphology of the portion of the common film layer that covers the sidewall of the pixel opening.

4. The light-emitting substrate according to claim 2, characterized in that, The cross-section of the pixel opening perpendicular to the substrate has a selected intersection line with the pixel defining layer, and the angle formed by the tangent of the selected intersection line and a reference plane is a selected angle; The reference plane is the surface of the pixel defining layer that is close to the substrate; The selected angle corresponding to the end point of the selected intersection line that is close to the substrate is A1; the selected angle corresponding to the end point of the selected intersection line that is away from the substrate is A2; Wherein, along the direction away from the substrate, the selected angle first gradually increases and then gradually decreases, and A1 is greater than or equal to 20° and less than 90°; or, Along the direction away from the substrate, the selected angle gradually increases, and A1 is greater than or equal to 5° and less than 90°, and A2 is greater than 5° and less than or equal to 90°; or, Along the direction away from the substrate, the selected angle gradually decreases, and A1 is less than or equal to 90°, and A2 is greater than or equal to 0° and less than 90°.

5. The light-emitting substrate according to claim 1, wherein Further comprising: An encapsulation structure located on the side of the pixel defining layer and the plurality of light-emitting functional layers that is away from the substrate; Wherein, the plurality of light extraction layers within the plurality of pixel openings are connected; the plurality of light extraction layers are multiplexed as the portion of the encapsulation structure that is close to the substrate.

6. The light-emitting substrate according to any one of claims 1 to 5, characterized in that Further comprising: A plurality of auxiliary extraction structures, one of the auxiliary extraction structures covers one side of the sidewall of the light extraction layer that is away from the pixel opening and is in contact with the light extraction layer; the refractive index of the material of the auxiliary extraction structure is greater than the refractive index of the material of the light extraction layer.

7. The light-emitting substrate according to claim 6, wherein The difference between the refractive index of the material of the auxiliary extraction structure and the refractive index of the material of the light extraction layer is greater than or equal to 0.

1.

8. The light-emitting substrate according to claim 6, wherein The auxiliary extraction structure includes at least two layers of auxiliary extraction layers arranged in sequence along the direction away from the light extraction layer; among two adjacent auxiliary extraction layers, the refractive index of the material of the auxiliary extraction layer relatively closer to the light extraction layer is less than the refractive index of the material of the auxiliary extraction layer relatively farther from the light extraction layer.

9. The light-emitting substrate according to claim 1, wherein It further includes: a packaging structure located on the side of the pixel defining layer and the plurality of light-emitting functional layers away from the substrate; a plurality of auxiliary extraction structures, one of the auxiliary extraction structures covering one side of the sidewall of the light extraction layer away from the pixel opening and in contact with the light extraction layer; the refractive index of the material of the auxiliary extraction structure is greater than the refractive index of the material of the light extraction layer; wherein, the plurality of light extraction layers located in the plurality of pixel openings are connected; the plurality of light extraction layers are multiplexed as a part of the packaging structure close to the substrate; the plurality of auxiliary extraction structures provided in the plurality of pixel openings are connected, and the plurality of auxiliary extraction structures are multiplexed as a part of the packaging structure.

10. The light-emitting substrate according to any one of claims 1 to 5 and claims 7 to 9, characterized in that The refractive index of the material of the light extraction layer ranges from 1.45 to 1.

75.

11. The light-emitting substrate according to any one of claims 1 to 5 and claims 7 to 9, characterized in that, The average thickness of the light extraction layer is less than or equal to 1 μm.

12. The light-emitting substrate according to any one of claims 1 to 5 and claims 7 to 9, characterized in that, The size of the pixel defining layer in the thickness direction of the substrate ranges from 0.5 μm to 1.8 μm.

13. A light-emitting device, characterized in that, It includes: the light-emitting substrate according to any one of claims 1 to 12, and a driving chip for driving the light-emitting substrate to emit light.

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