Control device for immersing wafer into electrolyte

The wafer is inclined and immersed in the electrolyte through the control device, which solves the problem of bubble discharge during wafer electroplating, realizes bubble-free plating, and improves the plating quality.

CN223150675UActive Publication Date: 2025-07-25SEMICON WET ADVANCED TECH CO LTD
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Patent Information

Application Number
CN202421711060.X
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-18
Publication Date
2025-07-25
Estimated Expiration
2034-07-18

AI Technical Summary

Technical Problem

In semiconductor packaging and plating technology, micro bubbles are easily generated when the wafer is contacted with the surface of the electrolyte during horizontal loading, which is difficult to discharge all of them, affecting the quality of the plating layer.

Method used

A control device is designed to switch between a horizontal state and an inclined state by cooperating the connecting module, a swing module and a driving component, and gradually immerse the electrolyte in the inclined state, and bubbles are discharged upward along the wafer surface.

Benefits of technology

Effectively discharge bubbles on the wafer surface, ensure zero bubbles during electroplating, and improve the quality of the plating.

✦ Generated by Eureka AI based on patent content.

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    Figure CN223150675U_ABST
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Abstract

The utility model discloses a control device for immersing a wafer into electrolyte, the wafer is horizontally loaded on the bottom surface of an electroplating module, the control device comprises a connecting module, a swing module rotatably connected on the connecting module and a driving part with a telescopic end part, and the electroplating module is connected with the swing module; a movable groove matched with the telescopic end part is formed in the swing module, the telescopic end part is inserted into the movable groove, the telescopic direction of the telescopic end part intersects with the extension direction of the movable groove, the telescopic end part synchronously moves along the movable groove during stretching, and the swing module drives the electroplating module to synchronously swing left and right; and the wafer is switched between a horizontal state and an inclined state. Through the cooperation of the connecting module, the swinging module and the driving part, the wafer is immersed in the electrolyte in an inclined state, and bubbles can be synchronously and gradually discharged upwards along the surface of the wafer, so that zero bubbles on the surface of the wafer during electroplating are ensured, and the electroplating quality is effectively improved.
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Description

Technical Field

[0001] The utility model belongs to the field of semiconductors, and particularly relates to a control device for a wafer to be immersed in electrolyte solution. Background Art

[0002] In the semiconductor packaging electroplating process, it is necessary to control the electroplating module to drive the wafer into the electrolytic cell and gradually immerse it in the electrolyte solution.

[0003] Currently, in the traditional wafer electroplating process, the wafer is horizontally loaded on the electroplating module, and under the drive of the lifting power mechanism, the electroplating module and the wafer move downward along the vertical direction until the wafer is immersed in the electrolyte solution. For example, a Chinese patent with the publication number CN215947446U discloses an auxiliary anode for wafer electroplating, which includes an auxiliary anode body. An installation rod is placed on the top of the auxiliary anode body. A threaded rod is fixedly connected to the bottom of the installation rod. The surface of the threaded rod near its top is rotatably connected with an installation plate through a bearing. A threaded sleeve plate is threadedly connected to the surface of the threaded rod. The bottom of the threaded sleeve plate is fixedly connected with a bottom plate. A limiting component is arranged on the lower surface of the installation plate. The surface of the limiting component is connected to the surface of the bottom plate. A micro hydraulic cylinder is fixedly installed on the top of the bottom plate. The output end of the micro hydraulic cylinder is fixedly connected with a lifting rod.

[0004] However, in the actual production process, when the horizontally placed wafer contacts the surface of the electrolyte solution, micro bubbles are likely to be generated on the surface of the wafer and it is very difficult to completely discharge them under the shielding of the wafer itself, thus affecting the quality of the coating on the surface of the wafer. Summary of the Invention

[0005] The technical problem to be solved by the utility model is to overcome the deficiencies of the prior art and provide a brand-new control device for a wafer to be immersed in electrolyte solution.

[0006] To solve the above technical problems, the technical solution adopted by the utility model is as follows:

[0007] A control device for a wafer to be immersed in electrolyte solution, the wafer is horizontally loaded on the bottom surface of the electroplating module. The control device includes a connection module, a swing module rotatably connected to the connection module, and a driving component with a telescopic end. The electroplating module is connected to the swing module; an activity groove matching the telescopic end is formed on the swing module. The telescopic end is inserted into the activity groove, and the telescopic direction of the telescopic end intersects with the extending direction of the activity groove. When telescoping, the telescopic end moves synchronously along the activity groove, and the swing module drives the electroplating module to swing left and right synchronously, and the wafer switches between a horizontal state and an inclined state.

[0008] According to a specific implementation and preferred aspect of the present utility model, when the telescopic end moves to the end of the movable slot, the wafer is in an inclined state. Herein, the stroke of the telescopic end is limited by the end of the movable slot, facilitating precise control of the inclination angle of the wafer.

[0009] Preferably, when the telescopic end moves to the end of the movable slot, the inclination angle of the wafer is θ, where 15° ≤ θ ≤ 25°.

[0010] According to another specific implementation and preferred aspect of the present utility model, when the telescopic end moves to the middle of the movable slot, the wafer is in a horizontal state. Herein, according to the actual process requirements, the wafer can be inclined to the left or to the right.

[0011] According to another specific implementation and preferred aspect of the present utility model, the swing module is rotatably connected to the connection module through a horizontal pivot from the lower part and forms a movable slot from the upper part, wherein the movable slot extends obliquely up and down; the telescopic end is arranged to reciprocate along the vertical direction. Herein, the structure is simple, facilitating processing and implementation.

[0012] Preferably, the telescopic end is arranged to be vertically aligned with the pivot. Herein, the movement amplitude of the electroplating module and the wafer during swinging can be effectively reduced. In other words, when the wafer is in an inclined state, the distance by which the edge of the wafer deviates in the corresponding direction is minimized, effectively saving the required electroplating space.

[0013] Preferably, the driving component includes a telescopic module having a telescopic end formed from the lower end, and a driving member fixedly connected to the connection module and used to drive the telescopic module to reciprocate up and down.

[0014] Preferably, the telescopic module includes a module body slidably connected to the driving member, and two extension rods obliquely extending downward from opposite sides of the module body and intersecting, with the telescopic end located at the intersecting end of the two extension rods.

[0015] Specifically, an isosceles triangle is formed between the two extension rods and the bottom edge of the module body. Herein, the telescopic module has high strength, can reduce deformation and extend the service life.

[0016] In addition, the connection module includes a first block body and a second block body arranged vertically offset, and a third block body horizontally connected between the bottom of the first block body and the top of the second block body, wherein the swing module is connected to the second block body.

[0017] Due to the implementation of the above technical solutions, the present utility model has the following advantages compared with the prior art:

[0018] In the wafer electroplating process of the prior art, the wafer is horizontally loaded on the electroplating module, and driven by the lifting power mechanism, the electroplating module and the wafer move downward along the vertical direction until the wafer is immersed in the electrolyte. However, when the horizontally placed wafer contacts the surface of the electrolyte, microbubbles are likely to form on the wafer surface and are difficult to discharge, thus affecting the quality of the coating on the wafer surface. In this application, the structure of the control device for immersing the wafer in the electrolyte is designed as a whole, ingeniously solving the deficiencies and defects of the prior art. After adopting this control device, the wafer is horizontally loaded on the electroplating module, and after connecting the electroplating module to the swing module, the entire control device is first driven down to a suitable position on the liquid surface of the electrolyte. At the same time, the swing module is driven to swing left and right by the driving component, so that the wafer is tilted to intersect with the horizontal plane and gradually immersed in the electrolyte in an inclined state, so as to enable the bubbles to be gradually discharged upward along the inclined surface of the wafer. Therefore, compared with the prior art, the utility model enables the wafer to be immersed in the electrolyte in an inclined state through the cooperation of the connection module, the swing module and the driving component, so that the bubbles can be gradually discharged upward along the wafer surface synchronously, thereby ensuring that there are zero bubbles on the surface of the wafer during electroplating and effectively improving the electroplating quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 FIG. is a three-dimensional structural schematic diagram of the control device for immersing the wafer in the electrolyte of the present utility model;

[0020] Figure 2 FIG. is a front view schematic diagram of the control device for immersing the wafer in the electrolyte of the present utility model

[0021] Figure 3 is Figure 2 left view schematic diagram of;

[0022] Wherein: 1. Connection module; 11. First block; 12. Second block; 13. Third block;

[0023] 2. Swing module; c. Activity slot; s. Pivot;

[0024] 3. Driving component; 30. Telescopic module; 300. Module body; 301. Extension rod; d. Telescopic end; 31. Driving member;

[0025] Z. Electroplating module. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0026] To make the above objects, features, and advantages of the present application more apparent and understandable, the following describes the specific embodiments of the present application in detail with reference to the accompanying drawings. Many specific details are set forth in the following description to facilitate a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0027] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present application.

[0028] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0029] In the present application, unless otherwise clearly specified and limited, the terms "mounted", "connected", "coupled", "fixed", etc. should be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0030] In the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "below", "beneath", and "underneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0031] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.

[0032] As Figures 1 to 3 shown, the control device for wafer immersion in electrolyte in this embodiment includes a connection module 1, a swing module 2, and a driving component 3; the wafer in this embodiment is horizontally loaded on the bottom surface of the electroplating module Z.

[0033] Specifically, the connection module 1 can move up and down under the drive of an external conventional lifting power mechanism, and the connection module 1 includes a first block 11 and a second block 12 arranged vertically offset, and a third block 13 horizontally connected between the bottom of the first block 11 and the top of the second block 12.

[0034] In this example, the swing module 2 is rotatably connected to the second block 12 through a horizontal pivot s from the lower part, and forms a left-right extending movable groove c from the upper part, wherein the movable groove c extends obliquely up and down; the electroplating module Z is connected to the bottom of the swing module 2 from the top. For the convenience of implementation, a notch for avoiding the movable groove c is formed on the second block 12.

[0035] In this example, the driving component 3 includes a telescopic module 30 having a telescopic end d matching the movable groove c formed from the lower end, and a driving member 31 fixedly connected to the connection module 1 and used to drive the telescopic module 30 to reciprocate up and down. The telescopic end d is inserted into the movable groove c, and the telescopic direction of the telescopic end d intersects with the extending direction of the movable groove c. When telescoping, the telescopic end d moves along the movable groove c synchronously, and the swing module 2 drives the electroplating module Z to swing left and right synchronously, and the wafer switches between a horizontal state and an inclined state.

[0036] In some specific embodiments, the telescopic end d is a shaft body arranged vertically aligned with the pivot s, and the telescopic end d reciprocates along the vertical direction; when the telescopic end d moves to the end of the movable groove c, the wafer is in an inclined state, and the maximum inclination angle of the wafer is θ, where 15° ≤ θ ≤ 25°; when the telescopic end d moves to the middle of the movable groove c, the wafer is in a horizontal state, that is, when the telescopic end d moves to both ends of the movable groove c, the angles of the wafer tilting to the left and right are equal.

[0037] For convenience of implementation, the telescopic module 30 includes a module body 300 slidably connected to the driving member 31, and two extension rods 301 extending obliquely downward from opposite sides of the module body 300 and intersecting. The telescopic end d is located at the end where the two extension rods 301 intersect; an isosceles triangle is formed between the two extension rods 301 and the bottom edge of the module body 300; the driving member 31 can be a driver of any conventional structure, such as a rodless cylinder.

[0038] In summary, after adopting this control device, when the wafer is horizontally loaded on the electroplating module and the electroplating module is connected to the swing module, first drive the entire control device to descend to a suitable position above the electrolyte surface. At the same time, drive the swing module to swing left and right through the driving component, so that the wafer is tilted to intersect with the horizontal plane and gradually immersed in the electrolyte in an inclined state, so as to realize that the bubbles are gradually discharged upward along the inclined surface of the wafer. Therefore, compared with the prior art, the present invention makes the wafer immersed in the electrolyte in an inclined state through the cooperation of the connection module, the swing module and the driving component, so that the bubbles can be gradually discharged upward along the surface of the wafer synchronously, thereby ensuring that there are zero bubbles on the surface of the wafer during electroplating and effectively improving the electroplating quality; secondly, the stroke of the telescopic end is limited by the end of the movable groove, which is convenient for accurately controlling the tilt angle of the wafer; thirdly, the wafer can be tilted to the left or to the right according to the actual process requirements; fourthly, the movement amplitude of the electroplating module and the wafer during swinging can be effectively reduced. In other words, when the wafer is in an inclined state, the distance of the edge of the wafer offset in the corresponding direction is the smallest, effectively saving the required electroplating space; fifthly, the telescopic module has high strength, can reduce deformation and extend the service life; sixthly, the structure is simple and convenient for processing and implementation.

[0039] The above has made a detailed description of the present invention, aiming to enable those skilled in this field to understand the content of the present invention and implement it. However, the protection scope of the present invention cannot be limited by this. Any equivalent changes or modifications made according to the spirit and essence of the present invention should be covered within the protection scope of the present invention.

Claims

1. A control device for wafer immersion in electrolyte, where the wafer is horizontally loaded on the bottom surface of the electroplating module, characterized in that: The control device includes a connection module, a swing module rotatably connected to the connection module, and a driving component having a telescopic end. The electroplating module is connected to the swing module; an activity slot matching the telescopic end is formed on the swing module, the telescopic end is inserted into the activity slot, and the telescopic direction of the telescopic end intersects with the extending direction of the activity slot. When telescoping, the telescopic end moves synchronously along the activity slot, and the swing module drives the electroplating module to swing left and right synchronously, and the wafer switches between a horizontal state and an inclined state.

2. The control device for immersing a wafer in an electrolytic solution according to claim 1, wherein: When the telescopic end moves to the end of the activity slot, the wafer is in an inclined state.

3. The control device for immersing a wafer in an electrolyte according to claim 2, characterized in that: When the telescopic end moves to the end of the activity slot, the inclination angle of the wafer is θ, where 15° ≤ θ ≤ 25°.

4. The control device for wafer immersion in electrolyte according to claim 1, wherein: When the telescopic end moves to the middle of the activity slot, the wafer is in a horizontal state.

5. The control device for immersing a wafer in an electrolytic solution according to any one of claims 1-4, characterized in that: The swing module is rotatably connected to the connection module through a horizontal pivot from below and forms the activity slot from above, where the activity slot extends obliquely up and down; the telescopic end reciprocates along the vertical direction.

6. The control device for immersing a wafer in an electrolytic solution according to claim 5, characterized in that: The telescopic end is vertically aligned with the pivot.

7. The control device for immersing a wafer in an electrolytic solution according to claim 5, wherein: The driving component includes a telescopic module forming the telescopic end from the lower end, and a driving member fixedly connected to the connection module and used to drive the telescopic module to reciprocate up and down.

8. The control device for immersing a wafer in an electrolyte according to claim 7, wherein: The telescopic module includes a module body slidably connected to the driving member, and two extension rods obliquely extending downward and intersecting from opposite sides of the module body. The telescopic end is located at the intersecting end of the two extension rods.

9. The control device for immersing a wafer in an electrolytic solution according to claim 8, characterized in that: An isosceles triangle is formed between the two extension rods and the bottom edge of the module body.

10. The control device for wafer immersion in electrolyte according to claim 1, characterized in that: The connection module includes a first block and a second block arranged vertically offset, and a third block horizontally connecting the bottom of the first block and the top of the second block. The swing module is connected to the second block.

Citation Information

Patent Citations

  • Auxiliary anode for wafer electroplating

    CN215947446U