Semiconductor test circuit
By introducing the first and second power amplification components combinations into the semiconductor test circuit, combined with a single-pole multi-throw switch, the problems of slow switching and limited life of high-power switches are solved, and semiconductor testing with fast switching and low maintenance costs are achieved.
Patent Information
- Application Number
- CN202421324987.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-11
- Publication Date
- 2025-07-29
- Estimated Expiration
- 2034-06-11
AI Technical Summary
In existing semiconductor test circuits, the switching time of high-power switches is long and the life span is limited, resulting in slower testing speed and high maintenance costs.
The first power amplifier assembly and the second power amplifier assembly are combined, and the switch is connected between the two through the switch, so that the switch is in a lower power environment, and the single-pole multi-throw switch is used to achieve rapid switching, reducing the switching frequency.
It improves the switching speed of the switch, extends the service life of the switch, reduces the cost of later maintenance, and supports multi-port high-power RF signal input, improving the test speed.
Smart Images
Figure CN223166861U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor testing, in particular to a semiconductor testing circuit. Background Art
[0002] In a radio frequency test machine for testing a device under test (DUT), usually a high-power radio frequency signal needs to be provided to one of the input ports of the DUT each time. The current method is as follows: a power amplification component is directly connected behind a signal source to output a 10W radio frequency signal, and the connection to one of the input ports of the DUT is switched through a high-power switch. Since the current high-power switch is a mechanical switch, its switching time is relatively long (generally about 20ms), resulting in a slow test speed. And because the high-power switch is in a high-power working environment, its service life is limited (the number of switching times is generally less than 2 million times), so it needs to be replaced regularly. Moreover, the cost of the high-power switch is relatively high (the unit price exceeds 4000 yuan), which makes the later maintenance cost relatively high. Summary of the Utility Model
[0003] One object of the utility model is to provide a semiconductor testing circuit, which can extend the service life of the switch and reduce the later maintenance cost.
[0004] Another object of the utility model is to shorten the switching time of the switch and improve the test speed.
[0005] To solve the above problems, the utility model provides a semiconductor testing circuit, including a first power amplification component, a switch, a second power amplification component and a device under test. The device under test has a plurality of input ports, and one end of each second power amplification component is connected to one of the input ports. The first power amplification component receives a radio frequency signal and performs a first power amplification on the radio frequency signal. One end of the first power amplification component is connected to one end of the switch, and the other end of the switch is connected to the other end of one of the second power amplification components, so that the second power amplification component can perform a second power amplification on the radio frequency signal. The device under test receives the radio frequency signal after two power amplifications through one of the input ports and provides an output signal.
[0006] Optionally, the switch is a single-pole multi-throw switch.
[0007] Optionally, the first power amplification component is a driver-stage power amplifier.
[0008] Furthermore, the first power amplification component performs a first power amplification on the radio frequency signal, and the amplification multiple is 10 to 20 times; the amplification multiple of each second power amplification component for the radio frequency signal after the first power amplification is 10 times.
[0009] Optionally, the number of input ports of the device under test is the same as the number of the second power amplification components, and both are 2 n where n≥1 and is a positive integer.
[0010] Optionally, each of the second power amplification components includes a final-stage power amplifier, a filter, and a circulator. One end of the final-stage power amplifier can be connected to the other end of the switch, the other end of the final-stage power amplifier is connected to the input end of the filter, the output end of the filter is connected to the input end of the circulator, and the output end of the circulator is connected to one of the input ports.
[0011] Furthermore, the filter is a low-pass filter.
[0012] Optionally, an output-end component is further included, and the device under test provides an output signal to the output-end component.
[0013] Furthermore, the output-end component includes an attenuator and an output module. The output port of the device under test is connected to one end of the attenuator, the other end of the attenuator is connected to the output module, and the processed output signal is transmitted to the output module, and the output module performs signal analysis on the output signal.
[0014] Optionally, a signal source is further included. The signal source is connected to the first power amplification component, and the signal source generates a radio frequency signal and transmits the radio frequency signal to the first power amplification component.
[0015] Compared with the prior art, the present utility model has the following technical effects:
[0016] The present utility model provides a semiconductor test circuit, which includes a first power amplification component, a switch, a second power amplification component, and a device under test. The device under test has a plurality of input ports, and one end of each of the second power amplification components is connected to each of the input ports. The first power amplification component receives a radio frequency signal and performs a first power amplification on the radio frequency signal. One end of the first power amplification component is connected to one end of the switch, and the other end of the switch is connected to the other end of one of the second power amplification components, so that the second power amplification component can perform a second power amplification on the radio frequency signal. The device under test receives the radio frequency signal after being power-amplified twice through one of the input ports and provides an output signal. By arranging the switch between the first power amplification component and the second power amplification component, the power environment where the switch is located is smaller than that of the existing switch, reducing the influence of high-power radio frequency signals on the lifespan of the switch, reducing the replacement frequency of the switch, thereby reducing the later maintenance cost. At the same time, the first power amplification component and the second power amplification component can support the input of high-power (such as 30W) radio frequency signals to the input ports of the device under test. Description of the Drawings
[0017] Figure 1 It is a schematic structural diagram of a semiconductor test circuit provided by an embodiment of the present utility model.
[0018] Description of the Reference Numerals:
[0019] 10 - First power amplification component; 20 - Switch; 30 - Second power amplification component; 40 - Attenuator; 50 - Output module. Detailed Embodiments
[0020] The following will further describe in detail a semiconductor test circuit of the present utility model. The present utility model will be described in more detail with reference to the drawings, in which the preferred embodiments of the present utility model are shown. It should be understood that those skilled in the art can modify the present utility model described herein and still achieve the advantageous effects of the present utility model. Therefore, the following description should be understood as a broad guidance for those skilled in the art and not as a limitation to the present utility model.
[0021] For clarity, not all features of the actual embodiments are described. In the following description, well-known functions and structures are not described in detail because they would clutter the present utility model with unnecessary details. It should be considered that in the development of any actual embodiment, a large number of implementation details must be made to achieve the specific goals of the developer, such as changing from one embodiment to another according to the relevant system or commercial limitations. Additionally, it should be considered that such development work may be complex and time-consuming, but it is only routine work for those skilled in the art.
[0022] To make the purpose and features of the present utility model more obvious and understandable, the following further describes the specific embodiments of the present utility model with reference to the accompanying drawings. It should be noted that the accompanying drawings are in a very simplified form and use non-precise ratios, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present utility model.
[0023] As Figure 1 shown, this embodiment provides a semiconductor test circuit, including a first power amplification component 10, a switch 20, a second power amplification component 30, and a device under test DUT. The device under test DUT has a plurality of input ports, and each input port is connected to one end of the second power amplification component 30. The first power amplification component 10 receives a radio frequency signal and performs a first power amplification on the radio frequency signal. The first power amplification component 10 is connected to one end of the switch 20, and the other end of the switch 20 is connected to the other end of one of the second power amplification components 30, so that the second power amplification component 30 can perform a second power amplification on the radio frequency signal. The device under test DUT receives the radio frequency signal after two power amplifications through one of the input ports and provides an output signal.
[0024] In this embodiment, by setting the switch 20 between the first power amplification component 10 and the second power amplification component 30, the power environment where the switch 20 is located is smaller than that of the existing switch 20, reducing the impact of high-power radio frequency signals on the lifespan of the switch 20, reducing the replacement frequency of the switch 20, thereby reducing the later maintenance cost. At the same time, the first power amplification component 10 and the second power amplification component 30 can support the input of high-power (such as 30W) radio frequency signals to the input ports of the device under test DUT.
[0025] Specifically, the semiconductor test circuit includes a signal source S. The signal source S is connected to the first power amplification component 10, and the signal source S generates a radio frequency signal of a test frequency and transmits the radio frequency signal to the first power amplification component 10.
[0026] The first power amplification component 10 is, for example, a driver-stage power amplifier, which can perform a first power amplification on the radio frequency signal, and the amplification multiple is 10 to 20 times, such as 10 times, 11 times, 12 times, 13 times, 14 times, 15 times, 16 times, 17 times, 18 times, 19 times, 20 times, etc. And the power of the radio frequency signal after the first power amplification is less than or equal to 35 dBm, which can make the switch in a lower power environment.
[0027] The switch 20 is, for example, a single-pole multi-throw switch 20, which can achieve more than 3 billion switching times, greatly reducing the later maintenance cost. At the same time, the switching speed of the switch 20 is fast. For example, the switching time of the switch is 20 μs, which is one-thousandth of the current 20 ms, and can shorten the switching time of the switch and improve the test speed.
[0028] One end of the switch 20 is connected to the first power amplification component 10, and the radio frequency signal after the first power amplification is transmitted to an input port of the device under test (DUT) through a second power amplification component 30. Among them, the number of input ports of the device under test (DUT) is the same as the number of the second power amplification components 30, and both are 2 n where n≥1 and is a positive integer.
[0029] In this embodiment, taking n equal to 2 as an example, then, the number of input ports of the device under test (DUT) is the same as the number of the second power amplification components 30, and both are 4. In this way, a high-power amplification circuit of one into four can be realized. Of course, the number of branches of the second power amplification component 30 (that is, the value of n) can be reduced or increased according to the actual application, so as to flexibly realize one into two or one into eight, or even other one into multiple.
[0030] The multiple of power amplification that each second power amplification component 30 can perform on the radio frequency signal after the first power amplification is 10 times, such as 8 times, 9 times, 10 times, 11 times, 12 times.
[0031] Each second power amplification component 30 includes a final power amplifier, a filter and a circulator. One end of the final power amplifier can be connected to the other end of the switch 20, the other end of the final power amplifier is connected to the input end of the filter, the output end of the filter is connected to the input end of the circulator, and the output end of the circulator is connected to the corresponding input port.
[0032] The final power amplifier performs a second power amplification on the radio frequency signal after the first power amplification, and sends the radio frequency signal after the second power amplification to the filter. The filter can reduce the harmonic influence of the signal corresponding to the input port and avoid signal interference between the input ports. Among them, the filter is, for example, a low-pass filter.
[0033] The circulator is used to improve the function of the matching network corresponding to the input port and also to protect the final power amplifier.
[0034] The semiconductor test circuit further includes an output end component. A radio frequency signal that has been power-amplified twice is input through an input port of the device under test (DUT) and an output signal is provided to the output end component.
[0035] The output terminal component includes an attenuator 40 and an output module 50. The output port of the device under test (DUT) is connected to one end of the attenuator 40, and the other end of the attenuator 40 is connected to the output module 50 and transmits the processed output signal to the output module 50. The output module 50 performs signal analysis on the output signal. In this embodiment, the attenuator 40 is, for example, an attenuator 40 with a fixed attenuation value of 30 dB. The attenuator 40 transmits the output signal of the DUT to the output module 50 after a 30 dB fixed attenuation, and the output module 50 performs signal analysis on the output signal.
[0036] When the semiconductor test circuit provided in this embodiment is working, when the signal source S generates a radio frequency signal of a test frequency (for example, generates a radio frequency signal of 0.7 GHz to 3 GHz), after the first power amplification (i.e., the amplitude is amplified to a preset amplitude) by the first power amplification component 10, for example, when the absolute value of the power reaches ≤ 35 dBm, the switch 20 connects to an input port of the DUT through switching and passing through one of the second power amplification components 30. Among them, each of the second power amplification components 30 performs a second power amplification on the radio frequency signal that has been power-amplified once on the connection link of each input port, so as to further improve the power capacity of the radio frequency signal input to each input port. For example, the power capacity reaches 45 dBm. At this time, after the radio frequency signal amplified twice passes through an input port of the DUT and is input, the output port of the DUT provides an output signal. The output signal is received by the output module 50 after being attenuated by a 30 dB fixed attenuator and signal analysis is performed.
[0037] In the semiconductor test circuit provided in this embodiment, each input port of the DUT can input a high-power (for example, 30 W) radio frequency signal, and the switching time of the semiconductor test circuit provided in this embodiment is very short. For example, it only takes 20 μs, which is one-thousandth of the current 20 ms, so that the power of the radio frequency signal input to each input port of the DUT reaches 30 W. Therefore, compared with the traditional semiconductor test circuit, the principle of this solution is simple, there are many input ports for high-power radio frequency signals, the test speed is fast, and the maintenance cost is low.
[0038] In this embodiment, by arranging the switch 20 between the first power amplification component 10 and the second power amplification component 30, the circuit does not require a high-power switch 20, that is, the switch 20 does not need to be in a high-power working environment, avoiding the disadvantages of slow switching speed and limited service life brought by the high-power switch 20, that is, solving the problem that the high-power switch 20 cannot quickly select and output through multiple ports, greatly improving the test speed, and at the same time, there is no need to frequently replace the switch 20, reducing the later maintenance cost.
[0039] In summary, the present utility model provides a semiconductor test circuit, including a first power amplification component, a switch, a second power amplification component, and a device under test. The device under test has multiple input ports, and one end of each input port is connected to one end of the second power amplification component. The first power amplification component receives a radio frequency signal and performs a first power amplification on the radio frequency signal. One end of the first power amplification component is connected to one end of the switch, and the other end of the switch is connected to the other end of one of the second power amplification components. The second power amplification component performs a second power amplification on the radio frequency signal, and the device under test provides an output signal. By arranging the switch between the first power amplification component and the second power amplification component, the power environment where the switch is located is smaller than that of the existing switch, reducing the influence of high-power radio frequency signals on the life of the switch, reducing the replacement frequency of the switch, thereby reducing the later maintenance cost. At the same time, the first power amplification component and the second power amplification component can support the input of high-power (such as 30W) radio frequency signals of the input ports of the device under test.
[0040] In addition, it should be noted that unless otherwise specified or indicated, the descriptions of the terms "first" and "second" in the specification are only used to distinguish each component, element, step, etc. in the specification, rather than to represent the logical relationship or sequential relationship, etc. between each component, element, step.
[0041] It can be understood that although the present utility model has been disclosed above with preferred embodiments, the above embodiments are not intended to limit the present utility model. For any person skilled in the art, without departing from the scope of the technical solution of the present utility model, many possible changes and modifications can be made to the technical solution of the present utility model by using the technical content disclosed above, or modified into equivalent embodiments with equivalent changes. Therefore, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present utility model without departing from the content of the technical solution of the present utility model still belong to the scope of protection of the technical solution of the present utility model.
Claims
1. A semiconductor test circuit, characterized in that, It includes a first power amplification component, a switch, a second power amplification component and a device under test. The device under test has a plurality of input ports, and one end of each second power amplification component is connected to one of the input ports. The first power amplification component receives a radio frequency signal and performs a first power amplification on the radio frequency signal. One end of the first power amplification component is connected to one end of the switch, and the other end of the switch is connected to the other end of one of the second power amplification components, so that the second power amplification component can perform a second power amplification on the radio frequency signal. The device under test receives the radio frequency signal after two power amplifications through one of the input ports and provides an output signal.
2. The semiconductor test circuit according to claim 1, wherein, The switch is a single-pole multi-throw switch.
3. The semiconductor test circuit according to claim 1, wherein The first power amplification component is a driver-stage power amplifier.
4. The semiconductor test circuit according to claim 3, wherein The first power amplification component performs a first power amplification on the radio frequency signal, and the amplification factor is 10 to 20 times; the amplification factor of each second power amplification component for the radio frequency signal that has undergone the first power amplification is 10 times.
5. The semiconductor test circuit according to claim 1, wherein The number of input ports of the device under test is the same as the number of the second power amplification components, and both are 2 n where n≥1 and is a positive integer.
6. The semiconductor test circuit according to claim 1, wherein Each second power amplification component includes a final-stage power amplifier, a filter and a circulator. One end of the final-stage power amplifier can be connected to the other end of the switch, the other end of the final-stage power amplifier is connected to the input end of the filter, the output end of the filter is connected to the input end of the circulator, and the output end of the circulator is connected to one of the input ports.
7. The semiconductor test circuit according to claim 6, wherein The filter is a low-pass filter.
8. The semiconductor test circuit according to claim 1, wherein, It further includes an output-end component, and the device under test provides an output signal to the output-end component.
9. The semiconductor test circuit according to claim 8, wherein The output-end component includes an attenuator and an output module. The output port of the device under test is connected to one end of the attenuator, and the other end of the attenuator is connected to the output module and transmits the processed output signal to the output module, and the output module performs signal analysis on the output signal.
10. The semiconductor test circuit according to claim 1, characterized in that, It further includes a signal source. The signal source is connected to the first power amplification component, and the signal source generates a radio frequency signal and transmits the radio frequency signal to the first power amplification component.