Heating disc and plasma degumming device
By designing multiple air conductor tanks on the heating plate to guide the airflow, the displacement problem caused by the air cushion effect of the wafer during heating is solved, and the safety and efficiency of the semiconductor manufacturing process are improved.
Patent Information
- Application Number
- CN202422319809.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2025-08-01
- Estimated Expiration
- 2034-09-23
AI Technical Summary
During semiconductor manufacturing, the wafer is vented on the heating plate to form an air cushion effect, resulting in displacement and debris, affecting the online pass rate of process products.
A heating disk is designed with a bearing surface having multiple air guide grooves that extend in different directions to guide the air flow evenly, reduce direct impact of the wafer, and maintain stability during its descent.
It effectively reduces the risk of equipment alarms and wafer damage caused by position deviations, and improves the safety and efficiency of the production process.
Smart Images
Figure CN223181075U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor manufacturing, and specifically relates to a heating plate and a plasma stripping device. Background Art
[0002] The manufacturing process of semiconductor devices includes thin film deposition, exposure, etching, photoresist removal, and wet cleaning. Among them, photoresist removal is carried out on a plasma stripping machine. In the thin film deposition process, if a certain thin film (such as TEOS, etc.) has grown on the back of the wafer, due to the inability to completely remove the gas adsorbed on the thin film during the subsequent annealing process, or when placed at room temperature, the thin film adsorbs gas again, resulting in a large amount of outgassing when the wafer 1 is placed on the cavity heating plate 2 at 400 degrees in vacuum during the photoresist removal process, as Figure 1 shown, forming an air cushion effect. This will cause the wafer to displace (slide) on the surface of the heating plate, and in severe cases, it will cause waste products and fragments, affecting the on-line qualification rate of the process products. Summary of the Utility Model
[0003] In view of the above-mentioned disadvantages of the prior art, the utility model provides a heating plate and a plasma stripping device. The heating plate is used to carry the wafer during the plasma stripping process, and it has a bearing surface facing the back of the wafer. There are multiple air guide grooves on the bearing surface, and the multiple air guide grooves are arranged in a grid pattern on the bearing surface. When the plasma stripping process is carried out using the heating plate provided by the utility model, during the descent of the wafer, the air flow can be evenly divided from the air guide grooves, thus effectively guiding the air flow, reducing the direct impact on the wafer, maintaining its stability during the descent, preventing the position of the wafer from shifting during the descent, thereby significantly reducing the risks of equipment alarm and wafer breakage caused by position deviation, improving the safety of the production process, helping to reduce material loss, and improving the overall production efficiency and quality control.
[0004] To achieve the above object and other related objects, the utility model provides a heating plate and a plasma stripping device. The heating plate is used to carry the wafer during the plasma stripping process. The heating plate has a bearing surface facing the back of the wafer. There are multiple air guide grooves on the bearing surface. The multiple air guide grooves extend along the first direction and the second direction respectively. The first direction is perpendicular to the second direction, and the distance between adjacent air guide grooves is equal.
[0005] Optionally, the width of the air guide groove is between 0.8 mm and 1.2 mm.
[0006] Optionally, the depth of the air guide groove is between 0.8 mm and 1.2 mm.
[0007] Optionally, a plurality of support columns are provided on the bearing surface, and the plurality of support columns are arranged equidistantly around the center of the bearing surface for bearing the wafer.
[0008] Optionally, the number of the support columns is at least three.
[0009] Optionally, the material of the heating plate is aluminum.
[0010] The present utility model further provides a plasma ashing device, comprising:
[0011] A reaction chamber;
[0012] A first electrode located at the top in the reaction chamber;
[0013] A second electrode located at the bottom in the reaction chamber, opposite to the first electrode;
[0014] The heating plate as described in any one of the above, located on the side of the second electrode facing the first electrode.
[0015] Optionally, the reaction chamber includes an air inlet and an air outlet. The air inlet is used to introduce process gas into the reaction chamber, and the air outlet is connected to a vacuum pumping device.
[0016] Optionally, it further includes a radio frequency matcher and a radio frequency power supply, and the radio frequency power supply is coupled to the second electrode through the radio frequency matcher.
[0017] The heating plate and the plasma ashing device provided by the present utility model have at least the following beneficial effects:
[0018] When the plasma ashing process is carried out by using the heating plate provided by the present utility model, during the descending process of the wafer, the air flow can be evenly divided from the air guiding grooves, thereby effectively guiding the air flow, reducing the direct impact on the wafer, maintaining its stability during the descending process, preventing the position of the wafer from shifting during the descending process, thus significantly reducing the risks of equipment alarm and wafer breakage caused by position deviation, improving the safety of the production process, helping to reduce material loss, and improving the overall production efficiency and quality control. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 Shown is a schematic diagram of a wafer placed on a heating plate in the prior art.
[0020] Figure 2 Shown is a schematic diagram of a wafer placed on a heating plate provided in Embodiment 1.
[0021] Figure 3 Shown is a top view of the heating plate provided in Embodiment 1.
[0022] Figure 4 It shows a schematic structural diagram of the plasma ashing device provided in the second embodiment.
[0023] Element number description
[0024] 1 Wafer
[0025] 2 Heating plate
[0026] 20 Air guide groove
[0027] 3 Support column
[0028] 4 Reaction chamber
[0029] 41 Inlet
[0030] 42 Outlet
[0031] 5 First electrode
[0032] 6 Second electrode
[0033] 7 Vacuum pumping device
[0034] 8 RF matcher
[0035] 9 RF unit Detailed implementation manners
[0036] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0037] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present invention. Although only the components related to the present invention are shown in the illustrations and are not drawn according to the number, shape, and size of the components in actual implementation, the forms, quantities, positional relationships, and proportions of the components in actual implementation can be arbitrarily changed on the premise of implementing the technical solution of the present invention, and the component layout form may also be more complex.
[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.
[0039] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating relative importance or implicitly indicating the quantity of the indicated technical features. Thus, unless otherwise stated, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features; the meaning of "a plurality" is two or more. The term "comprising" and any variations thereof mean inclusive inclusion, and there may be or be added one or more other features, integers, steps, operations, units, components, and / or combinations thereof.
[0040] In addition, terms indicating orientation or positional relationships such as "center", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are described based on the orientation or relative positional relationship shown in the drawings, and are only for the convenience of describing the present application in a simplified manner, rather than indicating that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation to the present application.
[0041] Furthermore, unless otherwise clearly specified and defined, the terms "mounted", "connected", and "coupled" shall be construed broadly. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, or the internal communication of two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.
[0042] The present application will be described in detail below with reference to the drawings and optional embodiments. It should be noted that, on the premise of no conflict, the following-described embodiments or technical features can be combined arbitrarily to form new embodiments.
[0043] Embodiment 1
[0044] This embodiment provides a heating plate, which is used to carry a wafer 1 in a plasma ashing process, as Figure 2 and Figure 3 shown. The heating plate 2 has a carrying surface facing the back surface of the wafer 1, and a plurality of air guide grooves 20 are provided on the carrying surface.
[0045] As an example, the plurality of air guide grooves 20 extend along a first direction ( Figure 3 the X-axis direction shown) and a second direction ( Figure 3 the Y-axis direction shown), and the spacing between adjacent air guide grooves 20 is equal. In this embodiment, the spacing between adjacent air guide grooves 20 is between 8 mm and 12 mm, preferably 10 mm.
[0046] As an example, the width of the air guide groove 20 is between 0.8 mm and 1.2 mm, preferably 1 mm; the depth of the air guide groove 20 is between 0.8 mm and 1.2 mm, preferably 1 mm. The air guide groove 20 is designed and formed on the surface of the heating plate 2 to ensure that during the descent of the wafer 1, the air flow can be evenly diverted from the air guide groove 20. Refer to Figure 2 As shown, this design effectively guides the air flow, reduces the direct impact on the wafer, and maintains its stability during the descent. In this way, the position of the wafer does not shift during the descent, thus significantly reducing the risks of equipment alarms and wafer breakage caused by position deviation. This not only improves the safety of the production process but also helps to reduce material losses and improve the overall production efficiency and quality control.
[0047] As Figure 2 and Figure 3 shown, a plurality of support columns 3 are provided on the bearing surface of the heating plate 2. The plurality of support columns 3 are arranged equidistantly around the center of the bearing surface. The support columns 3 are used to support the wafer 1 to prevent the wafer 1 from directly contacting the heating plate 2.
[0048] In an alternative embodiment, the height of the support column 3 is fixed, and its height range is between 3 mm and 20 mm. Specifically, it can be 8 mm, 12 mm or 18 mm. When the height of the support column 3 is within the above range, it can ensure that the wafer 1 can have a more appropriate heating speed and can also reasonably control the time of plasma ashing treatment.
[0049] In another alternative embodiment, the height of the support column 3 is adjustable. For example, the support column 3 can be composed of a plurality of nested sleeves in sequence. When the sleeves are stretched, the height of the support column 3 increases, and when the sleeves are contracted, the height of the support column 3 decreases. In other alternative embodiments, a push rod can also be provided inside the support column 3 to achieve the elevation or depression of the support column.
[0050] As an example, the number of the support columns 3 is at least three. After the wafer 1 is placed on the support columns 3, the wafer 1 can receive a relatively uniform acting force, thereby improving the stability of the wafer 1. In this embodiment, four support columns 3 are provided. In other alternative embodiments, there can also be three or more than four support columns 3.
[0051] As an example, the material of the support column 3 is ceramic. The thermal conductivity of the ceramic is small, which can prevent the heating plate 2 from quickly transferring heat to the wafer 1 through the support column 3. In other embodiments, the material of the support column 3 can also be a metal with a low thermal conductivity.
[0052] As an example, the material of the heating plate 2 is aluminum. This choice benefits from the high thermal conductivity and light weight of aluminum. In addition, the corrosion resistance and plasticity of aluminum also make it an ideal material for manufacturing the heating plate, which helps to improve the durability of the device and the convenience of maintenance. As an example, the air guide groove 20 is formed by scribing with a specially ground tungsten steel tool. The precise scribing of the tungsten steel tool can ensure that the size and shape of the air guide groove meet the design requirements.
[0053] Embodiment 2
[0054] This embodiment provides a plasma ashing device, as Figure 4 shown, including a reaction chamber 4, a first electrode 5, a second electrode 6, and a heating plate 2. Among them, the first electrode 5 is located at the top in the reaction chamber 4, the second electrode 6 is located at the bottom in the reaction chamber 4, and is arranged opposite to the first electrode 5, and the heating plate 2 is located on the side of the second electrode 6 facing the first electrode 5.
[0055] As an example, the reaction chamber 4 can be a reaction chamber made of aluminum alloy or stainless material that can be maintained in a vacuum state. In other alternative embodiments, the reaction chamber 4 can also be made of other corrosion-resistant materials. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.
[0056] As Figure 4 shown, the reaction chamber 4 includes an air inlet 41 and an air outlet 42. As an example, the air inlet 41 is used to introduce process gas into the reaction chamber 4, and the air outlet 42 is connected to a vacuum pumping device 7, and the vacuum pumping device 7 is used to evacuate the reaction chamber 4 and discharge the process gas.
[0057] As Figure 4 shown, the first electrode 5 is located at the top in the reaction chamber 4. In this embodiment, the first electrode 5 is grounded to achieve the closure of the circuit and perform safety processing on the high-frequency electric field and the discharge process. For example, grounding the first electrode 5 can maintain the potential stability in the plasma environment, help maintain the stability of the plasma characteristics and energy distribution, and better control the ashing process; in addition, it can safely guide and process the charges and currents caused by the high-frequency electric field and discharge, help reduce the risks of electric shock and discharge impact on the device and the operator, and ensure safe operation; finally, it can also assist in achieving the balance of the potential and field distribution in the plasma chamber, help improve the uniformity and stability of the plasma characteristics, and obtain a more precise etching effect.
[0058] As an example, the first electrode 5 is usually made of a metal material with conductivity, high temperature resistance, and corrosion resistance, such as aluminum, copper, titanium, etc.; its shape and structure can have various designs to adapt to different etching requirements and applications.
[0059] AsFigure 4 As shown, the second electrode 6 is located at the bottom in the reaction chamber 4 and is disposed opposite to the first electrode 5. As an example, the second electrode 6 is made of a conductive material such as silicon or metal, withstands the reaction of the plasma during the etching process, and provides the corresponding electric field and grounding function.
[0060] As Figure 4 shown, the heating plate 2 is located on the side of the second electrode 6 facing the first electrode 5. As an example, the heating plate 2 is the heating plate provided in the first embodiment. Referring to Figure 2 and Figure 3 shown, there are a plurality of air guide grooves 20 on the bearing surface of the heating plate 2. When the wafer 1 descends, the air flow can be evenly shunted from the air guide grooves 20, reducing the direct impact of the air flow on the wafer and maintaining its stability during the descent. In this way, the position of the wafer will not shift during the descent, thus significantly reducing the risks of equipment alarms and wafer breakage caused by position deviation, not only improving the safety of the production process, but also helping to reduce material losses and improve the overall production efficiency and quality control. As an example, the specific structure of the heating plate 2 refers to the description of the first embodiment and will not be elaborated here.
[0061] As Figure 4 shown, the plasma stripping device further includes a radio frequency matcher 8 and a radio frequency power supply 9. The radio frequency matcher 8 is connected to the radio frequency power supply 9 and is used to output the required radio frequency power; the radio frequency power supply 9 is coupled to the second electrode 6 through the radio frequency matcher 8. As an example, the second electrode 6 is connected to the radio frequency power supply 9 and serves as the output end of the radio frequency power. The first electrode 5 is grounded and can serve as the return path of the radio frequency power. Specifically, the radio frequency power is output from the output end of the radio frequency matcher 8 and enters the second electrode 6. After the process gas is introduced into the reaction chamber 4 through the first electrode 5, under the action of the radio frequency power, plasma is generated in the space between the first electrode 5 and the second electrode 6, that is, the space above the second electrode 6. The radio frequency power returns to the loop end of the radio frequency matcher 8 through the return path in the reaction chamber 4 via the plasma. According to different chamber structures and design requirements, the return path can have different settings.
[0062] The above embodiments only illustratively explain the principles and effects of the present invention and are not used to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.
Claims
1. A heating plate, characterized in that, The heating plate is used to carry a wafer during a plasma ashing process. The heating plate has a carrying surface facing the back side of the wafer. Multiple gas guiding grooves are provided on the carrying surface. The multiple gas guiding grooves extend along a first direction and a second direction respectively. The first direction is perpendicular to the second direction, and the spacing between adjacent gas guiding grooves is equal.
2. The heating plate according to claim 1, characterized in that The width of the gas guiding groove is between 0.8 mm and 1.2 mm.
3. The heating plate according to claim 1, characterized in that, The depth of the gas guiding groove is between 0.8 mm and 1.2 mm.
4. The heating plate according to claim 1, characterized in that, The spacing between adjacent gas guiding grooves is between 8 mm and 12 mm.
5. The heating plate according to claim 1, characterized in that, Multiple support posts are provided on the carrying surface. The multiple support posts are arranged equidistantly around the center of the carrying surface. The support posts are used to carry the wafer.
6. The heating plate according to claim 5, wherein The number of the support posts is at least three.
7. The heating plate according to claim 1, wherein, The heating plate is made of aluminum.
8. A plasma ashing device, characterized in that, Comprising: A reaction chamber; A first electrode located at the top in the reaction chamber; A second electrode located at the bottom in the reaction chamber, arranged opposite to the first electrode; The heating plate according to any one of claims 1 to 7, located on the side of the second electrode facing the first electrode.
9. The plasma ashing device according to claim 8, wherein, The reaction chamber includes an air inlet and an air outlet. The air inlet is used to introduce process gas into the reaction chamber. The air outlet is connected to a vacuum pumping device.
10. The plasma ashing device according to claim 8, wherein, It further includes a radio frequency matcher and a radio frequency power supply, and the radio frequency power supply is coupled to the second electrode through the radio frequency matcher.