Electrostatic chuck height adjusting device of integral chamber main body

Abstract

The utility model provides an electrostatic chuck height adjusting device of an integral chamber main body, which belongs to the technical field of semiconductor manufacturing, is applied to semiconductor processing equipment, and comprises a heightening assembly, the heightening assembly comprises an upper plate arranged between a mounting platform and an electrostatic chuck, and the upper plate is detachably connected with the electrostatic chuck; the semiconductor processing equipment is provided with an integral chamber main body and a mounting platform arranged in the chamber main body, the chamber main body and the mounting platform are of an integral structure, and the mounting platform is used for bearing an electrostatic chuck and an electrostatic chuck height adjusting device of the integral chamber main body. According to the utility model, the heightening assembly is arranged, the upper plate in the heightening assembly is arranged between the mounting platform and the electrostatic chuck, and the upper plate is detachably connected with the electrostatic chuck, so that the height of the electrostatic chuck is adjustable, and the problem of poor process result caused by insufficient field intensity of a radio frequency field position where a wafer in the reaction chamber is located is solved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductors, and in particular relates to an electrostatic chuck height adjustment device for an integral chamber body. Background Art

[0002] In semiconductor process equipment, the mounting platform 1 of the electrostatic chuck inside the existing vacuum reaction chamber is generally manufactured into an integral structure with the chamber body 2, such as Figure 1 This manufacturing method results in the electrostatic chuck being fixed at a fixed height within the reaction chamber when the electrostatic chuck is mounted on the mounting platform 1 within the reaction chamber during the equipment installation process. This means that in the semiconductor process equipment, the position of the wafer placed on the electrostatic chuck for processing within the field generated by the RF component 3 is fixed. When the equipment is being debugged, if the field strength generated by the RF component 3 at the height of the electrostatic chuck in the reaction chamber does not meet the process requirements, there are two adjustment methods: one is to adjust the intensity of the generated field by adjusting the power supply of the RF component 3. Since the power supply of the RF component 3 is not sensitive to the intensity of the field in which the wafer is located, if the field strength is increased by increasing the voltage power of the RF component 3, the power supply will need to be in the maximum load state for a long time, which will affect the service life and endanger the reliability of the machine. In addition, if the RF component 3 uses too high power, there will be a risk of sparking / breaking the equipment and safety risks. The other is to re-process and manufacture the reaction chamber. Since the existing reaction chamber can only rely on simulation data and existing equipment design size experience to determine the platform height in the reaction chamber in the early stage of design, the time and economic cost of making modifications and adjustments after manufacturing is completed are too high. Utility Model Content

[0003] Based on the technical problems existing in the prior art, the utility model provides an electrostatic chuck height adjustment device for an integral chamber body, aiming to solve the technical problem that the height position of the electrostatic chuck in the reaction chamber cannot be adjusted.

[0004] According to the technical solution of the present utility model, an electrostatic chuck height adjustment device for an integral chamber body is provided, which includes a heightening component and is applied to semiconductor processing equipment. The semiconductor processing equipment has a chamber body and a mounting platform arranged in the chamber body. The heightening component includes an upper plate arranged between the mounting platform and the electrostatic chuck, and the upper plate is detachably connected to the electrostatic chuck; the number of upper plates is multiple, and the multiple upper plates are stacked in sequence from top to bottom.

[0005] Furthermore, the chamber body and the mounting platform are integrated into a structure, and the mounting platform is used to support the electrostatic chuck. The upper plate is provided with an escape area, a lifting hole, a cooling air path, and a hole for the bias voltage conductive copper column insulation tube.

[0006] Preferably, the electrostatic chuck height adjustment device of the integral chamber body further includes a lower plate, a driving mechanism, a lifting mechanism and a sealing cover, the lower plate is detachably mounted above the mounting platform, and the two ends of the sealing cover are respectively connected to the upper plate and the lower plate.

[0007] More preferably, the lifting mechanism is arranged in the sealing cover, comprising a transmission part and a lifting part which are transmission-connected to each other, and the lifting part is connected to the upper plate. The sealing cover can gradually extend as the upper plate rises and gradually shrink as the upper plate descends.

[0008] Furthermore, the input end of the driving mechanism extends out of the chamber body, and the output end of the driving mechanism is linked to the transmission part, which is used to drive the transmission part to rotate so that the lifting part moves in a direction perpendicular to the upper plate to drive the upper plate to rise or fall.

[0009] Preferably, the transmission part includes a lead screw extending in a direction perpendicular to the upper plate; the lifting part is a lifting slider, the lifting slider is threadedly connected to the lead screw, and the upper plate is fixedly connected to the lifting slider.

[0010] Furthermore, the driving mechanism includes a first bevel gear, a second bevel gear and a rotating shaft, one end of the rotating shaft extends out of the chamber body, the other end of the rotating shaft is equipped with the first bevel gear and is located in the sealing cover, the second bevel gear is installed on the screw, and the second bevel gear is engaged with the first bevel gear.

[0011] Furthermore, a sealing sleeve is provided on the outside of the rotating shaft; and the electrostatic chuck height adjustment device of the integral chamber body further comprises a driving motor or a manual crank connected to one end of the rotating shaft extending outside the chamber body.

[0012] Compared with the prior art, the beneficial effect of the electrostatic chuck height adjustment device for an integral chamber body provided by the utility model is that: it arranges a raising component between the mounting platform and the electrostatic chuck, and the upper plate in the raising component is arranged between the mounting platform and the electrostatic chuck, and the upper plate and the electrostatic chuck are detachably connected to achieve adjustable height of the electrostatic chuck, thereby solving the problem of poor process results caused by insufficient field strength of the radio frequency field position of the wafer in the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or descriptions of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0014] Figure 1 A schematic diagram of the structure of a semiconductor processing device in which the mounting platform and the chamber body are integrated;

[0015] Figure 2 Schematic diagram of the assembly structure of the electrostatic chuck height adjustment device of the integral chamber body provided by the present utility model and the installation platform;

[0016] Figure 3 Schematic diagram of the structure of the upper plate provided by the present utility model;

[0017] Figure 4 Schematic diagram of the assembly structure of the electrostatic chuck height adjustment device of the integral chamber body provided by the present utility model and the installation platform.

[0018] The details of the reference numerals involved in the above-mentioned drawings are as follows:

[0019] 1. Installation platform; 2. Chamber body; 3. RF component; 4. Electrostatic chuck;

[0020] 51. Upper plate; 511. Avoidance area; 512. Lifting hole; 513. Cooling gas path; 514. Through hole; 515. Mounting hole; 516. Sealing ring;

[0021] 52. Lower plate; 53. Sealing cover; 54. Lead screw; 55. Lifting slider; 56. First bevel gear; 57. Second bevel gear; 58. Rotating shaft; 59. Sealing sleeve. Detailed implementation manners

[0022] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present utility model clearer, the present utility model will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present utility model and are not used to limit the present utility model.

[0023] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element. Without conflict, the embodiments in the present utility model and the features in the embodiments can be combined with each other. The present utility model will be described in detail below with reference to the drawings and embodiments.

[0024] It should be understood that the orientation or positional relationship indicated by terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0025] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0026] The present invention provides an electrostatic chuck height adjustment device for an integral chamber body, which belongs to the field of semiconductor manufacturing technology and is applied to semiconductor processing equipment. It includes a heightening component, and the heightening component includes an upper plate disposed between the installation platform and the electrostatic chuck. The upper plate is detachably connected to the electrostatic chuck. The semiconductor processing equipment has an integral chamber body and an installation platform disposed inside the chamber body. The chamber body and the installation platform are of an integral structure. The installation platform is used to carry the electrostatic chuck, which is an electrostatic chuck height adjustment device for the integral chamber body. By providing the heightening component in the present invention, the upper plate in the heightening component is disposed between the installation platform and the electrostatic chuck, and the upper plate is detachably connected to the electrostatic chuck, so that the height of the electrostatic chuck can be adjusted, thereby solving the problem that the process result is poor due to insufficient field strength at the position of the wafer in the reaction chamber in the radio frequency field.

[0027] As recorded in the background art, when the height position of the existing electrostatic chuck in the reaction chamber is such that the field strength generated by the radio frequency component 3 does not meet the process requirements, there are the following two adjustment methods: One is to adjust the power of the power supply of the radio frequency component 3 to adjust the intensity of the generated field, but it is not convenient for process adjustment, and using too high a power for the radio frequency component 3 has the risk of arcing / breaking down the equipment and safety risks; the other is to re-manufacture the reaction chamber. Since the existing reaction chamber can only rely on simulation data and the design size experience of existing equipment to determine the height of the platform in the reaction chamber at the initial design stage, the time and economic costs for modification and adjustment after manufacturing are too high.

[0028] See Figure 2As shown in the figure, to solve the above problems, an electrostatic chuck height adjustment device for an integral chamber body according to an embodiment of the present invention is applied to semiconductor processing equipment. The semiconductor processing equipment has a chamber body 2 and a mounting platform 1 provided in the chamber body 2. The chamber body 2 and the mounting platform 1 are of an integral structure. The mounting platform 1 is used to carry an electrostatic chuck 4. The electrostatic chuck height adjustment device for the integral chamber body includes a heightening component. The heightening component includes an upper plate 51 provided between the mounting platform 1 and the electrostatic chuck 4. The upper plate 51 is detachably connected to the electrostatic chuck 4. With the above arrangement, the upper plate 51 is placed above the mounting platform 1, and the electrostatic chuck 4 is placed above the upper plate 51. The height of the electrostatic chuck 4 is adjusted, thereby adjusting the position of the wafer in the radio frequency field. The electrostatic chuck 4 and the upper plate 51 are detachably connected, making the disassembly and assembly of the upper plate 51 convenient.

[0029] Applying the above technical solution provided by the embodiment of the present invention, by setting the heightening component, the upper plate 51 in the heightening component is provided between the mounting platform 1 and the electrostatic chuck 4, and the upper plate 51 is detachably connected to the electrostatic chuck 4, realizing that the height of the electrostatic chuck 4 is adjustable, thereby solving the problem that the process result is poor due to insufficient field strength at the position of the wafer in the reaction chamber in the radio frequency field.

[0030] In some embodiments, the number of the upper plates 51 is multiple, and the multiple upper plates 51 are stacked in sequence from top to bottom. According to actual needs, one upper plate 51 can be arranged above the mounting platform 1, or two or more upper plates 51 can be stacked above the mounting platform 1. For example, the upper plate 51 is a circular plate with a certain thickness. Of course, the upper plate 51 can also be of other shapes, which is not limited herein.

[0031] See Figure 3 As shown in the figure, the upper plate 51 is provided with an avoidance area 511, a lifting hole 512, a cooling gas path 513, and a through hole 514 for passing a bias voltage conducting copper column insulating tube. The upper plate 51 has an inner surface and an outer surface, and the inner surface encloses the avoidance area 511. The upper plate 51 is of a hollow structure, making it have an inner surface. The avoidance area 511 formed by the inner surface is used to avoid other hardware structures on the electrostatic chuck 4, so that the upper plate 51 is closely fitted with the electrostatic chuck 4 and the mounting platform 1; both ends of the lifting hole 512 are respectively formed on the upper surface and the lower surface of the upper plate 51, and the lifting hole 8 is a through hole for the lifting pin to pass through; a cooling gas path 513 is provided inside the upper plate 51 to introduce cooling gas; a through hole 514 for passing a bias power conducting copper column insulating tube is provided on the upper surface of the upper plate 51 to be suitable for the assembly of existing equipment;

[0032] See Figure 3As shown, the upper surface of the upper plate 51 is provided with a mounting hole 515. The upper plate 51 is fixedly connected to the electrostatic chuck 4 through the mounting hole 515. There are multiple mounting holes 515, which are evenly distributed along the circumference of the upper plate 515. The electrostatic chuck 4 is provided with connecting holes (not shown in the figure) that are the same in number as the mounting holes 515 and in corresponding positions. Exemplarily, the mounting holes 515 and the connecting holes are provided with internal threads, and bolts are passed through the mounting holes 515 and the connecting holes. The upper plate 51 and the electrostatic chuck 4 are fixedly connected by the internal threads and the bolts. Through the above-mentioned threading method, the electrostatic chuck 4 and the upper plate 51 can be quickly disassembled and assembled. Of course, there are many ways to detachably connect the upper plate 51 and the electrostatic chuck 4, which are not limited here.

[0033] See also Figure 3 As shown, a sealing ring 516 is provided on the upper surface of the upper plate 51. Exemplarily, the sealing ring 516 is a special-shaped sealing ring that is enclosed outside the avoidance area 511. A special-shaped groove is provided on the upper surface of the upper plate 51 to accommodate the sealing ring 516, thereby ensuring a seal between the upper plate 51 and the electrostatic chuck 4.

[0034] See also Figure 4 As shown, in another embodiment, the electrostatic chuck height adjustment device of the integral chamber body also includes a lower plate 52, a drive mechanism, a lifting mechanism, and a sealing cover 53. The lower plate 52 is detachably mounted above the mounting platform 1. The two ends of the sealing cover 53 are respectively connected to the upper plate 51 and the lower plate 52. The lifting mechanism is disposed within the sealing cover 53 and includes a transmission portion and a lifting portion that are mutually transmission-connected. The lifting portion is connected to the upper plate 51. The input end of the drive mechanism extends outside the chamber body 2. The output end of the drive mechanism is linked to the transmission portion and is used to drive the transmission portion to rotate so that the lifting portion moves in a direction perpendicular to the upper plate 51, thereby driving the upper plate 51 to rise or fall. The sealing cover 53 can gradually extend as the upper plate 51 rises and gradually contract as the upper plate 51 falls. In this embodiment, the transmission portion is driven to rotate by the drive mechanism, and the rotation of the transmission portion can drive the lifting portion to rise. Since the lifting portion is fixedly connected to the upper plate 51, it can drive the upper plate 51 to rise or fall, thereby achieving adjustable height of the electrostatic chuck 4. The sealing cover 53 is used to seal the space between the upper plate 51 and the lower plate 52; the lower plate 52 has the same structure as the upper plate 51 to be suitable for assembly of existing equipment. Of course, the lower plate 52 can also be adaptively designed according to the actual situation of the relevant equipment.

[0035] See also Figure 4 As shown, in another embodiment, the sealing cover 53 is an accordion cover. The accordion cover ensures that when the upper plate 51 is raised or lowered, the accordion cover will expand and contract with it, which not only seals the space between the upper plate 51 and the lower plate 52, but also allows the wiring structure and the like to be concentrated within the accordion cover, which is more aesthetically pleasing.

[0036] See alsoFigure 4 As shown, in another embodiment, the transmission part includes a lead screw 54 extending in a direction perpendicular to the upper plate 51; the lifting part is a lifting slider 55, the lifting slider 55 is threadedly connected to the lead screw 54, and the upper plate 51 is fixedly connected to the lifting slider 55. Specifically, when the lead screw 54 rotates, the lifting slider 55 threadedly connected to the lead screw 54 will move in the axial direction of the lead screw 54, that is, in the direction perpendicular to the upper plate 51. Since the lifting slider 55 is fixedly connected to the lower part of the upper plate 51, it will drive the upper plate 51 to move in the axial direction of the lead screw, realizing lifting. The rotation motion is converted into linear motion through the lead screw 54 to realize the lifting of the upper plate 51, with a simple structure and less occupied space when installed in the sealing cover 53.

[0037] See Figure 4 As shown, in another embodiment, the drive mechanism includes a first bevel gear 56, a second bevel gear 57 and a rotating shaft 58. One end of the rotating shaft 58 extends outside the chamber body 2, the other end of the rotating shaft 58 is provided with a first bevel gear 56 and is located inside the sealing cover 53, the second bevel gear 57 is installed on the lead screw 54, and the second bevel gear 57 meshes with the first bevel gear 56. Specifically, the rotation of the rotating shaft 58 drives the first bevel gear 56 to rotate. Since the first bevel gear 56 and the second bevel gear 57 are meshed, the second bevel gear 57 will also rotate. Since the second bevel gear 57 is installed at one end of the lead screw 54 located inside the sealing cover 53, the lead screw 54 will also rotate with the second bevel gear 57 and drive the lifting slider 55 to move in the axial direction of the lead screw 54, thereby realizing the lifting of the upper plate 51. The rotating shaft 58 passes through the chamber body 2, the mounting platform 1 and the lower plate 52 from outside to inside in sequence.

[0038] See Figure 4 As shown, in another embodiment, a sealing sleeve 59 is sleeved outside the rotating shaft 58. The cavity and the through-hole are sealed and radio frequency shielded through the sealing sleeve 59 at the through-cavity of the rotating shaft 58.

[0039] In another embodiment, the electrostatic chuck height adjusting device of the integral chamber body further includes a drive motor (not shown in the figure) or a manual crank (not shown in the figure) connected to the end of the rotating shaft 58 extending outside the chamber body 2. The rotating shaft 58 can be driven electrically or manually. Of course, according to requirements, the rotating shaft 58 can be connected with both an electric drive device and a manual drive device. When a power outage or the electric drive device fails, the manual drive device can be used to drive the rotating shaft 58 to rotate, so that the upper plate 51 can be lifted in any case. See Figure 3As shown, in another embodiment, the present utility model provides a semiconductor processing device, including an electrostatic chuck height adjustment device of the integral chamber body as described in any one of the above embodiments. Since the semiconductor processing device provided by the embodiment of the present utility model has the same advantages as the electrostatic chuck height adjustment device of the integral chamber body, it will not be elaborated here.

[0040] In summary, the electrostatic chuck height adjustment device of the integral chamber body provided by the present utility model has at least the following beneficial technical effects:

[0041] (1) By arranging an upper plate 51 between the mounting platform 1 and the electrostatic chuck 4, and the upper plate 51 is detachably connected to the electrostatic chuck 4, the height of the electrostatic chuck 4 can be adjusted, thereby solving the problem that the process result is poor due to insufficient field strength at the position of the wafer in the reaction chamber in the radio frequency field.

[0042] (2) By providing structures such as an avoidance area 511, a lifting hole 512, a cooling gas path 513, and a through hole 514 for the offset voltage conducting copper column insulating tube on the upper plate 51, it is compatible with the installation interface size structures of the original chamber body 2 and the electrostatic chuck 4, solving the compatibility requirements for the transformation of existing integrated reaction chamber devices, and at the same time solving the timeliness and economic requirements for the application of the solution to the transformation of existing devices.

[0043] (3) The electrostatic chuck height adjustment device of the integral chamber body composed of the upper plate 51, the lower plate 52, the driving mechanism, the lifting mechanism, and the sealing cover 53 can adjust the height of the electrostatic chuck 4 without opening the chamber, and the operation is more convenient and fast.

[0044] The above are only the preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. An electrostatic chuck height adjustment device for an integral chamber body, characterized in that, It includes a heightening component and is applied to semiconductor processing equipment. The semiconductor processing equipment has a chamber body and a mounting platform arranged in the chamber body. The heightening component includes an upper plate arranged between the mounting platform and the electrostatic chuck, and the upper plate is detachably connected to the electrostatic chuck; there are multiple upper plates, and the multiple upper plates are stacked in sequence from top to bottom.

2. The electrostatic chuck height adjustment device of the integral chamber body according to claim 1, characterized in that, The chamber body and the mounting platform are an integrated structure, and the mounting platform is used to carry the electrostatic chuck.

3. The electrostatic chuck height adjustment device for the integral chamber body according to claim 2, wherein The upper plate is provided with an avoidance area, a lifting hole, a cooling air path and a through hole for a bias voltage conducting copper column insulating tube.

4. The electrostatic chuck height adjustment device of the integral chamber body according to claim 3, characterized in that, The electrostatic chuck height adjustment device of the integral chamber body further includes a lower plate, a driving mechanism, a lifting mechanism and a sealing cover. The lower plate is detachably mounted above the mounting platform, and the two ends of the sealing cover are respectively connected to the upper plate and the lower plate.

5. The electrostatic chuck height adjusting device for the integral chamber body according to claim 4, characterized in that, The lifting mechanism is arranged in the sealing cover and comprises a transmission part and a lifting part which are transmission-connected to each other, and the lifting part is connected to the upper plate.

6. The electrostatic chuck height adjustment device of the integral chamber body according to claim 5, characterized in that The input end of the driving mechanism extends out of the chamber body, and the output end of the driving mechanism is linked to the transmission part to drive the transmission part to rotate so that the lifting part moves in a direction perpendicular to the upper plate to drive the upper plate to rise or fall.

7. The electrostatic chuck height adjustment device of the integral chamber body according to claim 6, characterized in that, The sealing cover can gradually extend as the upper plate rises, and gradually shrink as the upper plate descends.

8. The electrostatic chuck height adjusting device of the integral chamber body according to claim 7, characterized in that, The transmission part includes a lead screw extending in a direction perpendicular to the upper plate; the lifting part is a lifting slider, the lifting slider is threadedly connected to the lead screw, and the upper plate is fixedly connected to the lifting slider.

9. The electrostatic chuck height adjusting device of the integral chamber body according to claim 8, characterized in that, The driving mechanism includes a first bevel gear, a second bevel gear and a rotating shaft. One end of the rotating shaft extends out of the chamber body, and the other end of the rotating shaft is equipped with the first bevel gear and is located in the sealing cover. The second bevel gear is installed on the screw, and the second bevel gear is engaged with the first bevel gear.

10. The electrostatic chuck height adjustment device of the integral chamber body according to claim 9, characterized in that, The outer portion of the rotating shaft is covered with a sealing sleeve; the electrostatic chuck height adjustment device of the integral chamber body also includes a driving motor or a manual crank connected to one end of the rotating shaft extending out of the chamber body.

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