Particle removal system of electrostatic adsorption base

Abstract

The utility model discloses a particle removal system of an electrostatic adsorption base, which comprises an electrostatic adsorption base arranged in a working chamber of plasma equipment and used for fixing a wafer through the electrostatic adsorption base when the plasma equipment works, the plasma equipment is etching equipment, CVD (chemical vapor deposition) equipment or PVD (physical vapor deposition) equipment, and the electrostatic adsorption base is arranged in the working chamber of the plasma equipment. The plasma equipment comprises the working chamber and a wafer storage chamber, the working chamber is used for etching or depositing a thin film on a wafer when the plasma equipment works, and the wafer storage chamber is used for storing the wafer on which the thin film is to be etched or deposited; the mechanical arm is arranged in the working chamber and used for conveying the wafer in the storage chamber to the electrostatic adsorption base through the mechanical arm when the plasma equipment works, the mechanical arm comprises a driving rod and a wafer carrying platform, the driving rod is used for driving the wafer carrying platform to move through the mechanical arm, and the wafer carrying platform is used for bearing the wafer when the wafer is conveyed; and an air outlet hole is formed below the slide glass platform and is used for blowing particles on the electrostatic adsorption base through gas flowing out of the air outlet hole.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor devices and integrated circuits, in particular to a particle removal system for an electrostatic adsorption base. Background Art

[0002] In the semiconductor integrated circuit manufacturing process, plasma equipment (equipment that operates using plasma, such as etching equipment, chemical vapor deposition (CVD) equipment, and physical vapor deposition (PVD) equipment) is typically equipped with an electrostatic chuck (ESC) to hold the wafer. When the plasma equipment is operating, gas flows from the center of the ESC, creating backpressure on the back of the wafer, ensuring uniform heating across the wafer.

[0003] However, after using plasma equipment for operation, particles are easily left on the electrostatic adsorption base. During operation, when the wafer is adsorbed on the electrostatic adsorption base with residual particles, it will cause local warping, thereby causing back pressure imbalance and triggering equipment alarms. In the worst case, the chamber needs to be opened for maintenance, and in the worst case, the wafer will be scrapped, thereby affecting product production efficiency. Summary of the Invention

[0004] The utility model provides a particle removal system for an electrostatic adsorption base, which can solve the problem of wafer back pressure imbalance during operation caused by residual particles in plasma equipment in related technologies. The system includes:

[0005] An electrostatic adsorption base, the electrostatic adsorption base being disposed in a working chamber of a plasma device, the electrostatic adsorption base being used to fix a wafer thereon when the plasma device is operating, the plasma device being an etching device, a CVD device, or a PVD device, the plasma device comprising the working chamber and a wafer storage chamber, the working chamber being used to etch or deposit a thin film on the wafer when the plasma device is operating, and the wafer storage chamber being used to store wafers to be etched or deposited with thin films;

[0006] A robotic arm is arranged in the working chamber, and is used to transport the wafers in the storage chamber to the electrostatic adsorption base when the plasma equipment is working. The robotic arm includes a driving rod and a wafer carrier platform. The driving rod is used to drive the wafer carrier platform to move when the plasma equipment is working. The wafer carrier platform is used to carry the wafer when transporting the wafer. An air outlet is provided under the wafer carrier platform. The air outlet is used to discharge gas through the air outlet to purge the particles on the electrostatic adsorption base when the plasma equipment is working.

[0007] In some embodiments, a first gas pipeline is provided in the robotic arm, and the first gas pipeline is connected to the gas outlet.

[0008] In some embodiments, when the plasma device is in operation, the gas flowing out through the gas outlet includes argon and / or nitrogen.

[0009] In some embodiments, a second gas pipeline is provided in the electrostatic adsorption base, and the second gas pipeline is used to form back pressure on the back side of the wafer through the outflowing gas when etching or depositing a thin film on the wafer.

[0010] In some embodiments, the gas flowing through the second gas conduit includes argon.

[0011] The technical solution of this utility model has at least the following advantages:

[0012] By setting an air outlet under the wafer carrier platform of the robotic arm of the plasma equipment, when the plasma equipment is working, when the robotic arm transports the wafer to the electrostatic adsorption base, gas can flow out through the air outlet to blow away the particles on the electrostatic adsorption base, thereby reducing the residual particles on the electrostatic adsorption base and solving the problem of low production efficiency caused by the imbalance of wafer back pressure during operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0014] Figure 1 It is a schematic diagram of a particle removal system for an electrostatic adsorption base provided by an exemplary embodiment of the present invention, in which a robotic arm is away from the electrostatic adsorption base when the system is in operation;

[0015] Figure 2It is a schematic diagram of a mechanical arm approaching an electrostatic adsorption base when a particle removal system of an electrostatic adsorption base provided by an exemplary embodiment of the present utility model is working. DETAILED DESCRIPTION

[0016] The following is a clear and complete description of the technical solutions of the present invention in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0017] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating positions or relationships, are based on the positions or relationships shown in the accompanying drawings and are intended solely to facilitate the description of this utility model and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0018] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components; wireless connections or wired connections. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0019] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0020] refer to Figure 1 , which shows a schematic diagram of a mechanical arm away from the electrostatic adsorption base when the particle removal system of the electrostatic adsorption base provided by an exemplary embodiment of the present invention is working; Figure 2 , which shows a schematic diagram of a mechanical arm approaching an electrostatic adsorption base when a particle removal system of an electrostatic adsorption base provided by an exemplary embodiment of the present utility model is working, as shown in FIG. Figure 1 and Figure 2 As shown, the system is applied to a plasma device 100, and the system includes:

[0021] The electrostatic adsorption base 120 is disposed in the working chamber 101 of the plasma equipment 100 and is used to fix the wafer 200 when the plasma equipment 100 is working.

[0022] The plasma equipment 100 is an equipment that operates by plasma, which is an etching equipment, a CVD equipment or a PVD equipment, and includes a working chamber 101 and a wafer storage chamber 102. The working chamber 101 is used to etch or deposit thin films on the wafer 200 when it is working, and the wafer storage chamber 102 is used to store wafers to be etched or deposited with thin films (the wafers to be etched or deposited with thin films can be stored in a wafer box, Figure 1 、 Figure 2 The working chamber 101 is connected to the vacuum pump 140. When the plasma device 100 is working, the working chamber is evacuated by the vacuum pump 140 until a target vacuum level is reached.

[0023] The robot arm is arranged in the working chamber 101 and is used to transport the wafers in the storage chamber 102 to the electrostatic adsorption base 120 when the plasma equipment 100 is working. The robot arm includes a driving rod 112 and a wafer carrier platform 111. The driving rod 112 is used to drive the wafer carrier platform 111 to move when the plasma equipment 100 is working. The wafer carrier platform 111 is used to carry the wafer 200 when transporting the wafer 200. There is an air outlet under the wafer carrier platform 111. The air outlet is used to discharge gas through it to purge the particles on the electrostatic adsorption base 120 when the plasma equipment 100 is working.

[0024] For example, Figure 1 and Figure 2 As shown, when the plasma equipment 100 is working, the plasma equipment 100 drives the driving rod 112 to move, and the driving rod 112 thereby drives the wafer carrier platform 111 to move to the bottom of the wafer 200 to lift it out, and then the driving rod 112 drives the wafer carrier platform 111 to transfer the wafer 200 to the top of the electrostatic adsorption base 120, and place the wafer 200 on the electrostatic adsorption base 120. When the robotic arm approaches the electrostatic adsorption base 120, the gas flows out of the outlet below the wafer carrier platform 111 to purge the particles on the electrostatic adsorption base 120.

[0025] In actual implementation, the outflow of gas in the air outlet can also be controlled manually or automatically. For example, when the distance of the driving rod 112 reaches a predetermined value, the gas starts to flow out, and stops flowing out after a predetermined time; or, the driving rod 112 is controlled to drive the wafer carrier 111 close to the electrostatic adsorption base 120 at predetermined intervals, and then the gas flows out through the air outlet, and stops flowing out after a predetermined time; or, the driving rod 112 is manually controlled to drive the wafer carrier 111 close to the electrostatic adsorption base 120, and then the gas flows out of the air outlet.

[0026] The robot arm is provided with a first gas pipeline 131 (which can be provided on the water pipe of the robot arm ( Figure 1 、 Figure 2 (not shown in the figure), the first gas pipe 131 is connected to the gas outlet, and when the plasma equipment 100 is working, the gas flowing out of the gas outlet includes argon (Ar) and / or nitrogen (N2).

[0027] The electrostatic adsorption base 120 is provided with a second gas pipeline 132 , which is used to form back pressure on the back of the wafer 200 when etching or depositing a thin film on the wafer 200 . The gas flowing out of the second gas pipeline 132 includes argon.

[0028] To sum up, in the embodiment of the present invention, an air outlet is provided under the wafer carrier platform of the robotic arm of the plasma equipment. When the plasma equipment is working, when the robotic arm transports the wafer to the electrostatic adsorption base, gas can flow out through the air outlet to blow away the particles on the electrostatic adsorption base, thereby reducing the residual particles on the electrostatic adsorption base and solving the problem of low production efficiency caused by the imbalance of wafer back pressure during operation.

[0029] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will readily appreciate that other variations or modifications based on the above descriptions are possible. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A particle removal system for an electrostatic adsorption base, characterized in that: include: An electrostatic adsorption base, the electrostatic adsorption base being disposed in a working chamber of a plasma device, the electrostatic adsorption base being used to fix a wafer thereon when the plasma device is operating, the plasma device being an etching device, a CVD device, or a PVD device, the plasma device comprising the working chamber and a wafer storage chamber, the working chamber being used to etch or deposit a thin film on the wafer when the plasma device is operating, and the wafer storage chamber being used to store wafers to be etched or deposited with thin films; A robotic arm is arranged in the working chamber, and is used to transport the wafers in the storage chamber to the electrostatic adsorption base when the plasma equipment is working. The robotic arm includes a driving rod and a wafer carrier platform. The driving rod is used to drive the wafer carrier platform to move when the plasma equipment is working. The wafer carrier platform is used to carry the wafer when transporting the wafer. An air outlet is provided under the wafer carrier platform. The air outlet is used to discharge gas through the air outlet to purge the particles on the electrostatic adsorption base when the plasma equipment is working.

2. The system according to claim 1, wherein: The robotic arm is provided with a first gas pipeline, which is communicated with the gas outlet.

3. The system according to claim 2, characterized in that When the plasma device is in operation, the gas flowing out through the gas outlet includes argon and / or nitrogen.

4. The system according to any one of claims 1 to 3, characterized in that: The electrostatic adsorption base is provided with a second gas pipeline, and the second gas pipeline is used to form a back pressure on the back side of the wafer through the outflowing gas when etching or depositing a thin film on the wafer.

5. The system according to claim 4, characterized in that The gas flowing out through the second gas pipe includes argon.

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