Wafer heating device and semiconductor equipment

Abstract

The utility model discloses a wafer heating device and semiconductor equipment. The wafer heating device comprises a cavity; the supporting ring is located in the cavity, and the supporting ring is used for bearing a wafer; and the heating module is arranged on the inner side of the supporting ring, and the heating module is used for providing heat for the wafer. A heating module of the wafer heating device is arranged on the inner side of a supporting ring, the supporting ring is used for bearing a wafer, the heating module is used for providing heat for the wafer, and the wafer is heated, so that the surface of the wafer is not prone to condensation and frosting after the wafer enters the atmospheric environment, the wafer is not prone to flaws in the subsequent machining process, and the wafer quality is improved. And the yield and the production efficiency of the wafer are improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, and in particular to a wafer heating device and semiconductor equipment. Background Art

[0002] During integrated circuit manufacturing, semiconductor wafers undergo multiple critical process steps, among which ion implantation is a core process for forming microelectronic structures such as transistors. To precisely control the distribution of dopants, wafers are often processed in ultra-low temperatures to reduce the thermal diffusion effects of the crystal structure. While ultra-low temperature ion implantation can improve the electrical performance of the wafer, it also presents a series of process challenges, particularly the temperature adaptation issue when transferring the wafer from the ultra-low temperature processing environment to a room temperature atmosphere.

[0003] After the low-temperature ion implantation process, the wafer surface temperature often drops below ambient temperature. Especially during ultra-low-temperature processing, the wafer surface temperature can reach well below 0°C. This temperature difference causes condensation to form on the wafer surface after it is removed from the atmosphere. In some cases, atmospheric moisture can even freeze directly onto the wafer surface, forming frost. This condensation or frost can not only introduce impurities but also form uneven deposits on the wafer surface, affecting the wafer's electrical performance and the quality of the final product.

[0004] Condensation and frosting on the wafer surface after low-temperature ion implantation can cause defects during subsequent processing, leading to reduced yields and significant losses in production efficiency. To completely address this issue, it is necessary to develop a technology that can quickly heat the wafer to near or equal to room temperature after ion implantation to prevent the formation of condensation and significantly reduce quality issues caused by temperature differences. Utility Model Content

[0005] The problem solved by the utility model is to provide a wafer heating device and semiconductor equipment for heating wafers.

[0006] To solve the above problems, the utility model provides a wafer heating device, comprising: a cavity; a support ring located in the cavity, the support ring being used to support the wafer; a heating module, the heating module being arranged on the inner side of the support ring, the heating module being used to provide heat to the wafer.

[0007] Optionally, the support ring has an inner side wall, the heating module is fixedly connected to the inner side wall, and the heating module and the top surface of the support ring are spaced apart, so that the heating module and the wafer are spaced apart.

[0008] Optionally, the heating module is used to provide heating light and irradiate the heating light onto the surface of the wafer.

[0009] Optionally, the heating module includes a base and lamp beads arranged in a ring, grid or radial pattern on the base, and the lamp beads include halogen lamp beads and / or LED lamp beads.

[0010] Optionally, a plurality of support blocks are provided on the top surface of the support ring, and the support blocks are used to contact the wafer so that the wafer is spaced apart from the support ring.

[0011] Optionally, a protrusion is provided on the outer edge of the top surface of the support block for limiting the edge of the wafer.

[0012] Optionally, the wafer heating device further includes: a thermal insulation module located above the support ring, the thermal insulation module and the heating module are spaced apart, and when the support ring carries the wafer, the wafer is spaced apart from the thermal insulation module.

[0013] Optionally, the thermal insulation module includes a thermal insulation board.

[0014] Optionally, the wafer heating device further includes: a supporting module, one end of which is fixedly connected to the supporting ring, and the supporting module is used to support the thermal insulation module.

[0015] Optionally, a plurality of fixing portions are provided on the outer side wall of the support ring at intervals along the circumferential direction; the support module includes a plurality of support columns, and one end of each support column is fixedly connected to the fixing portion.

[0016] Optionally, the other end of the support column is connected to the top of the cavity.

[0017] Optionally, the wafer heating device also includes: a first temperature sensor, which is arranged on the support ring, and is used to monitor the wafer temperature and send the temperature information of the wafer; a second temperature sensor, which is arranged on the heating module, and is used to monitor the temperature of the heating module and send the temperature information of the heating module; a controller, which is connected to the first temperature sensor and the heating module, and receives the wafer temperature information sent from the first temperature sensor. When the wafer temperature exceeds the preset temperature, the controller controls the heating module to stop heating; the controller is also connected to the second temperature sensor, and is used to receive the temperature information of the heating module sent from the second temperature sensor.

[0018] Optionally, the wafer heating device also includes: a first electrical connection column located at the top of the cavity, the first electrical connection column being connected to the first temperature sensor and the second temperature sensor through a signal line; a second electrical connection column located at the top of the cavity, the second electrical connection column being connected to the heating module through a power line, for supplying power to the heating module.

[0019] The present utility model also provides a semiconductor device, comprising: a loading and locking chamber, which is used to carry wafers and can be switched between a vacuum state and an atmospheric pressure state; a transfer chamber, which is connected to the loading and locking chamber in a vacuum state and is used to transfer wafers in a vacuum state; a cooling module, which is connected to the transfer chamber and is used to cool the wafers from the transfer chamber; a process chamber, which is connected to the transfer chamber and is used to perform process treatment on the wafers that have been cooled; and the wafer heating device, which is used to heat the wafers after the process treatment.

[0020] Optionally, the transfer chamber includes: a conveying device for conveying wafers to be processed from the loading and locking chamber to the process chamber, for conveying wafers after processing from the process chamber to the cavity, and for conveying wafers after heating from the cavity to the loading and locking chamber.

[0021] Optionally, the cavity includes a gate facing the transfer chamber; the wafer heating device also includes: a gate valve, arranged on the cavity, for opening or closing the gate.

[0022] Compared with the prior art, the technical solution of the utility model has the following advantages:

[0023] The wafer heating device in the embodiment of the present invention includes: a cavity; a support ring located in the cavity, the support ring being used to support the wafer; a heating module, the heating module being arranged inside the support ring, the heating module being used to provide heat to the wafer. The heating module of the wafer heating device is arranged inside the support ring, the support ring being used to support the wafer, and the heating module being used to provide heat to the wafer, so that the wafer is heated to a temperature equal to or close to room temperature, making it less likely for condensation and frost to form on the surface of the wafer after entering the atmospheric environment, and less likely for the wafer to have defects during subsequent processing, thereby improving the wafer yield and production efficiency.

[0024] In an optional solution, the support ring has an inner sidewall, the heating module is fixedly connected to the inner sidewall, and the heating module is spaced apart from the top surface of the support ring, so that the heating module is spaced apart from the wafer. When the wafer heating device is in operation, the heat generated by the heating module is radiated to the wafer, thereby heating the wafer to a temperature equal to or close to room temperature. This makes it less likely for condensation and frost to form on the surface of the wafer after entering the atmospheric environment, and the wafer is less likely to develop defects during subsequent processing, thereby improving the wafer yield and production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is an exploded view of a wafer heating device in one embodiment of the present invention;

[0026] Figure 2 This is a partial schematic diagram of a wafer heating device in one embodiment of the present invention;

[0027] Figure 3 This is a schematic structural diagram of a support block in one embodiment of the present utility model;

[0028] Figure 4 This is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;

[0029] Figure 5 This is a schematic diagram of wafer transmission in a semiconductor device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0030] As we know from the background, condensation and frosting on the wafer surface after low-temperature ion implantation can cause defects during subsequent processing, resulting in reduced yield and significant loss of production efficiency. To completely solve this problem, it is necessary to develop a technology that can quickly heat the wafer to near or equal to room temperature after ion implantation to prevent the formation of condensation and significantly reduce quality issues caused by temperature differences.

[0031] To solve the above problems, an embodiment of the present invention provides a wafer heating device comprising: a cavity; a support ring located in the cavity, the support ring being used to support the wafer; a heating module, the heating module being arranged inside the support ring, the heating module being used to provide heat to the wafer. The heating module of the wafer heating device is arranged inside the support ring, the support ring being used to support the wafer, and the heating module being used to provide heat to the wafer, so that the wafer is heated to a temperature that is the same as or close to room temperature, making it less likely for condensation and frost to form on the surface of the wafer after entering the atmospheric environment, and making it less likely for defects to occur in the subsequent processing of the wafer, thereby improving the wafer yield and production efficiency.

[0032] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0033] Figure 1 This is an exploded view of a wafer heating device in one embodiment of the present invention; Figure 2 It is a partial schematic diagram of a wafer heating device in one embodiment of the present invention.

[0034] The wafer heating device is used to heat the wafer after low-temperature ion implantation, and includes: a cavity 100; a support ring 101, located in the cavity 100, the support ring 101 is used to support the wafer; a heating module 102, the heating module 102 is arranged on the inner side of the support ring 101, the heating module 102 is used to provide heat to the wafer.

[0035] The heating module 102 of the wafer heating device is arranged on the inner side of the support ring 101. The support ring 101 is used to carry the wafer. The heating module 102 is used to provide heat to the wafer. The wafer is heated to achieve the purpose of heating, so that its temperature is the same as or close to the room temperature, so that condensation and frost are not likely to occur on the surface of the wafer after entering the atmospheric environment, and the wafer is less likely to have defects in the subsequent processing process, thereby improving the wafer yield and production efficiency.

[0036] The chamber 100 is used to provide a closed environment for heating the wafer.

[0037] The support ring 101 is used to stably support the wafer during the heating process, and the inner side wall of the support ring 101 is also used for installing the heating module 102.

[0038] In this embodiment, the support ring 101 has an inner wall, the heating module 102 is fixedly connected to the inner wall of the support ring 101, and the heating module 102 and the top surface of the support ring 101 are spaced apart, so that the heating module 102 is spaced apart from the wafer.

[0039] The wafer heating device in the embodiment of the present invention is used to heat the wafer after low-temperature ion implantation. When the wafer heating device is working, the heat generated by the heating module 102 is radiated to the wafer, and the wafer is heated to achieve the purpose of heating, so that its temperature is the same as or close to the room temperature, so that condensation and frost are not likely to occur on the surface of the wafer after entering the atmospheric environment, and defects are not likely to occur on the wafer during subsequent processing, thereby improving the wafer yield and production efficiency.

[0040] In this embodiment, a plurality of support blocks 1011 are provided on the top surface of the support ring 101 . The support blocks 1011 are in contact with the wafer, so that the wafer and the support ring 101 are spaced apart.

[0041] The support block 1011 provides stable support, so that there is a gap between the wafer and the top surface of the support ring 101. In the process of heating the wafer after ion implantation, a robot is used to place the wafer to be heated on the top surface of the support ring 101, and a robot is used to remove the heated wafer. The support block 1011 keeps the wafer and the top surface of the support ring 101 separated. This gap is convenient for the robot to remove the wafer after placing it on the top surface of the support ring 101, and also convenient for the robot to extend into the gap and lift the wafer out when taking out the wafer. In addition, the gap between the wafer and the top surface of the support ring 101 helps the hot air on the inner wall of the support ring 101 to convect with the outside, promotes uniform heating of the entire wafer surface, improves heating efficiency, shortens heating time, and thus makes the heat received by the wafer more uniform, and local overheating problems caused by direct contact between the heating module 102 and the wafer are less likely to occur.

[0042] As an example, the number of the support blocks 1011 is three. In other embodiments, the number of the support blocks 1011 may also be four, five or six.

[0043] like Figure 3 As shown, in this embodiment, a protrusion 1013 is provided on the outer edge of the top surface of the support block 1011 for limiting the edge of the wafer.

[0044] Protrusions 1013 limit the position of the wafer edge, thereby precisely positioning the wafer on support ring 101. This prevents the wafer from shifting slightly during the heating process, reducing uneven heating caused by wafer offset. Furthermore, because the wafer's position remains fixed, the robot can accurately grasp the wafer when removing it after heating, avoiding damage to the wafer or operational errors.

[0045] As an example, the protrusion 1013 enables the wafer to be automatically aligned to the center of the top surface of the support ring 101 .

[0046] In this embodiment, the support block 1011 is fixed to the top surface of the support ring 101 by screws (not shown in the figure). In other embodiments, there may be other fixing methods, which will not be described here.

[0047] The heating module 102 is fixedly connected to the inner wall of the support ring 101 and the heating module 102 and the top surface of the support ring 101 are spaced apart, so that the heating module 102 and the wafer are spaced apart. This not only ensures the uniformity of wafer heating, but also avoids local overheating problems that may be caused by direct contact with the heat source, which is conducive to heating the wafer from a low temperature state to a preset temperature, so that condensed water is not easily generated after the wafer enters the atmospheric environment.

[0048] In this embodiment, the heating module 102 is used to provide heating light and irradiate the heating light onto the surface of the wafer.

[0049] The emitted light provided by the heating module 102 can directly act on the surface of the wafer. Through direct irradiation with the heating light, the wafer can be quickly heated from a low temperature to a preset temperature in a relatively short period of time. This is because the light irradiation can directly heat the surface of the wafer, and the heating energy is directly transferred to the wafer, reducing the loss of heat energy during the transfer process. Moreover, by irradiating the wafer surface with heating light, the heat distribution on the wafer surface can be evenly distributed by adjusting the distribution and intensity of the light source, avoiding uneven wafer stress and quality problems caused by uneven heat distribution.

[0050] Specifically, the heating module 102 includes a base 1021 and lamp beads 1022 arranged in a ring, grid or radial pattern on the base 1021 .

[0051] The base 1021 provides installation space for the lamp beads 1022, and provides uniform light intensity to the wafer through the circular, grid or radial layout of the lamp beads 1022, so that the surface of the wafer is heated evenly, and local overheating or underheating is less likely to occur, which helps to quickly raise the wafer temperature to a preset stable level and effectively prevent condensation and frosting on the wafer surface.

[0052] In this embodiment, the lamp beads 1022 include halogen lamp beads 1022 and / or LED lamp beads. Halogen lamp beads 1022 can provide high-intensity and concentrated heat output and are used for precise heating. In this embodiment, the heat emitted by the halogen lamp beads 1022 can directly act on the wafer on the top surface of the support ring 101, reducing heat loss and avoiding excessive increases in the ambient temperature. LED lamp beads have higher energy efficiency and longer service life, making the wafer heating device more economical and environmentally friendly during operation.

[0053] The wafer heating device further includes a heat insulation module 106 . The heat insulation module 106 and the heating module 102 are spaced apart. When the support ring 101 carries the wafer, the wafer is spaced apart from the heat insulation module 106 .

[0054] The thermal insulation module 106 is located above the support ring 101 and is used to prevent the heat emitted by the heating module 102 from continuing to transfer upward. A certain spacing space is formed between the thermal insulation module 106 and the heating module 102 to play a role in heat preservation, so that heat energy can be concentrated between the thermal insulation module 106 and the heating module 102 to surround the wafer, increase the heating rate of the wafer, and at the same time prevent heat from being conducted to other parts of the equipment, preventing heat from damaging other components.

[0055] In this embodiment, the heat insulation module 106 includes a heat insulation board made of a material with good thermal insulation performance, such as ceramic, which not only has low thermal conductivity but can also withstand the high temperature from the heating module 102 .

[0056] The wafer heating device further includes a support module 107 , one end of which is fixedly connected to the support ring 101 , and the support module 107 is used to support the thermal insulation module 106 .

[0057] The support module 107 is used to fix and support the thermal insulation module 106, providing a stable support platform for the thermal insulation module 106, and improving the mechanical stability of the thermal insulation module 106 during the heating operation.

[0058] It should be noted that, on the outer wall of the support ring 101 , a plurality of fixing portions 1012 are provided at intervals along the circumferential direction; the support module 107 includes a plurality of support columns 1071 , and one end of each support column 1071 is fixedly connected to the fixing portion 1012 .

[0059] Multiple fixing portions 1012, spaced circumferentially on the outer wall of support ring 101, are fixedly connected to multiple support posts 1071 of support module 107, ensuring precise alignment between heating module 102 and insulation module 106. This one-to-one correspondence between fixing portions 1012 and support posts 1071 maintains balanced support for insulation module 106 during the heating process, preventing positional shifts due to mechanical stress or thermal expansion, and ensuring uniform heating of the wafer throughout the heating cycle.

[0060] In this embodiment, the other end of the support column 1071 is connected to the top of the cavity 100, so that the support column 1071 is stably set in the cavity 100, thereby firmly fixing the insulation module 106. It should be noted that the support column 1071 and the insulation module 106 are fixed in a conventional manner.

[0061] The wafer heating device also includes: a first temperature sensor 110, which is arranged on the support ring 101, and the first temperature sensor 110 is used to monitor the temperature of the wafer and send the temperature information of the wafer; a controller (not shown in the figure), which is connected to the first temperature sensor 110 and the heating module 102, and the controller receives the wafer temperature information sent from the first temperature sensor 110. When the wafer temperature exceeds the preset temperature, the controller controls the heating module 102 to stop heating.

[0062] The first temperature sensor 110 is set on the support ring 101. Its main function is to monitor the surface temperature of the wafer in real time and send the temperature information to the controller, which is conducive to accurately obtaining the temperature of the wafer. The controller receives the wafer temperature information from the first temperature sensor 110 and controls the working state of the heating module 102 based on a preset temperature threshold. When the temperature of the wafer reaches the preset temperature, the controller will instruct the heating module 102 to stop heating, thereby preventing the wafer from overheating, which is conducive to improving the processing quality of the wafer and also improving production efficiency and safety.

[0063] In this embodiment, the first temperature sensor 110 includes a thermocouple or an infrared sensor. Thermocouples respond quickly to temperature changes and can monitor wafer temperature changes in real time. Infrared sensors measure temperature by detecting infrared radiation emitted from the wafer surface without direct contact with the wafer.

[0064] The wafer heating device also includes: a second temperature sensor 111, which is arranged on the heating module 102, for monitoring the temperature of the heating module 102 and sending temperature information of the heating module 102; the controller is also connected to the second temperature sensor 111, and the controller is used to receive the temperature information of the heating module 102 sent from the second temperature sensor 111.

[0065] The second temperature sensor 111 is used to monitor the temperature of the heating module 102 in real time. The controller is used to receive temperature information from the second temperature sensor 111. This helps ensure that the lamp beads 1022 in the heating module 102 are properly providing heat, so that the heating module 102 operates within a safe and effective range. When the temperature of the heating module 102 is detected to be too high, the heating power of the heating module 102 is reduced accordingly; when the temperature of the heating module 102 is detected to be too low, the controller will increase the heating power of the heating module 102 accordingly.

[0066] In this embodiment, the second temperature sensor 111 includes a thermocouple or an infrared sensor. Thermocouples respond quickly to temperature changes and can monitor the temperature changes of the heating module 102 in real time. Infrared sensors measure temperature by detecting infrared radiation emitted from the surface of the heating module 102, without requiring direct contact with the heating module 102.

[0067] It should be noted that, when the heating module 102 is turned on for a period of time, if the temperature value detected by the second temperature sensor 111 does not reach the predetermined temperature, it indicates that there is a problem with the heating module 102 and maintenance is required.

[0068] In this embodiment, the wafer heating device further includes: a first electrical connection column 108 located at the top of the chamber 100 , and the first electrical connection column 108 is connected to the first sensor and the second sensor through a signal line.

[0069] The first electrical connection column 108 is used as a transmission medium for electrical signals. The first electrical connection column 108 is located at the top of the cavity 100 and is connected to the first temperature sensor 110 and the second temperature sensor 111 through a signal line. Through the use of the first electrical connection column 108, the signals of the first temperature sensor 110 and the second temperature sensor 111 can be effectively transmitted to the controller.

[0070] In this embodiment, the wafer heating device further includes: a second electrical connection column 109 located at the top of the cavity 100 , and the second electrical connection column 109 is connected to the heating module 102 via a power line for supplying power to the heating module 102 .

[0071] Second electrical connection pin 109 is used to provide the electrical energy required for the operation of heating module 102. In the wafer heating device, heating module 102 is responsible for heating the processed wafers to a temperature equal to or close to room temperature to prevent condensation on the wafer surface after exposure to the atmosphere. Second electrical connection pin 109 is located at the top of the device chamber 100 and is directly connected to heating module 102 via a power cord, ensuring that heating module 102 receives stable and continuous power.

[0072] Specifically, the first electrical connection pillar 108 and the second electrical connection pillar 109 are located on the top plate 105 at the top of the cavity 100 .

[0073] It should be noted that the support column 1071 is provided with a vertical section, and the power line and signal line are arranged on the vertical section. Specifically, the vertical section has a fixing hole, and the wafer heating device also includes a fixing member for fixing the power line and signal line. The fixing member is connected to the fixing block via screws, so that the power line and signal line are fixedly arranged on the vertical section of the support column 1071.

[0074] refer to Figure 4 The present invention also provides a semiconductor device according to an embodiment of the present invention, including: a loading and locking chamber 10 for carrying wafers and capable of switching between a vacuum state and an atmospheric pressure state; a transfer chamber 20, connected to the loading and locking chamber 10 in a vacuum state, for transferring wafers in a vacuum state; a cooling module 30, connected to the transfer chamber 20, for cooling the wafers from the transfer chamber 20; a process chamber 40, connected to the transfer chamber 20, for performing process treatment on the wafers that have undergone the refrigeration treatment; and a wafer heating device 50, for heating the wafers after the process treatment.

[0075] The loading lock chamber 10 is used to carry wafers, and the loading lock chamber 10 is used to switch between a vacuum state and an atmospheric pressure state. The transfer chamber 20 is connected to the loading lock chamber 10 in a vacuum state. The chamber is used to transfer wafers while maintaining a vacuum state, protecting the wafers from contamination by impurities in the air during the transfer process. The cooling module 30 is connected to the transfer chamber 20. It is used to refrigerate the wafers from the loading lock chamber 10 to achieve the specific low temperature required for the process, in preparation for precise ion implantation. The process chamber 40 performs ion implantation and other process treatments on the wafers that have been refrigerated. The wafer heating device 50 is used to heat the wafers after ion implantation, so that condensation and frost are not easy to occur on the surface of the wafer, thereby ensuring the quality of the wafer in subsequent processing.

[0076] In this embodiment, the chamber 100 of the wafer heating device 50 includes a gate (not shown) facing the transfer chamber 20. The gate faces the transfer chamber 20, which allows wafers to be quickly moved directly from the transfer chamber 20 into the chamber 100 through the gate during transfer, reducing the risk of condensation or frost forming on the wafer surface.

[0077] like Figure 1 As shown, in this embodiment, the chamber 100 further includes a top opening 1002 located at the top of the chamber 100. The top opening 1002 is located at the top of the chamber 100 and is used to replace or maintain the heating module 102 or the support ring 101 of the internal structure.

[0078] like Figure 1 As shown, the wafer heating device also includes: a gate valve 103, which is arranged on the cavity 100 and is used to open or close the gate; a top plate 105, which is arranged on the top opening 1002 of the cavity 100, and the top plate 105 is fixedly connected to the end of the support module 107 away from the support ring 101.

[0079] like Figure 1 As shown, it should be noted that the chamber 100 further includes a loading port 1001 away from the transfer chamber 20. Accordingly, the wafer heating device further includes: the door plate 104, which is provided on the chamber 100 and is used to open or close the loading port 1001.

[0080] In this embodiment, the transfer chamber 20 includes: a conveying device for conveying the wafers to be processed from the loading and locking chamber 10 to the process chamber 40, for conveying the processed wafers from the process chamber 40 to the cavity 100, and for conveying the heated wafers from the cavity 100 to the loading and locking chamber 10.

[0081] It should be noted that there are multiple conveying devices. As an example, there are two conveying devices, namely a first conveying device 60 and a second conveying device 70. The first conveying device 60 and the second conveying device 70 play different roles; the transmission chamber 20 also includes: an alignment device 90.

[0082] Specifically, the alignment device 90 is used to receive the wafers from the loading lock chamber 10 and align the wafers; the first conveying device 60 is used to convey the wafers in the loading lock chamber 10 to the alignment device 90 when the loading lock chamber 10 is in a vacuum state; the first conveying device 60 is also used to convey the wafers that have undergone process processing to the loading lock chamber 10 or the wafer heating device 50; the second conveying device 70 is used to convey the wafers from the alignment device 90 to the cooling module 30 to cool the wafers, and transfer the cooled wafers to the process chamber 40 for process processing.

[0083] In this embodiment, the first conveying device 60 and the second conveying device 70 are both robots.

[0084] refer to Figure 5During semiconductor equipment operation, wafers are transported to the load lock chamber 10 by the robot of the front-end transfer module (EFEM) in an atmospheric environment. The load lock chamber 10 is switchable between vacuum and atmospheric pressure. It receives wafers in an atmospheric environment and communicates with the transfer chamber 20 in a vacuum state. The wafers are then transferred to the alignment device 90 via the first conveyor 60 located within the transfer chamber 20. The alignment device 90 accurately positions the wafers, providing a precise reference for subsequent cooling and ion implantation processes. After alignment, the wafers are transferred to the cooling module 30 via the second conveyor 70. In the cooling module 30, the wafers are pre-cooled to a predetermined temperature to meet the specific temperature conditions required during ion implantation, which directly impacts the ion implantation effect and wafer quality. After cooling, the wafers are transferred to the process chamber 40 via the second conveyor 70 for ion implantation. After ion implantation, the wafers are transferred to the wafer warming device 50 via the first conveyor 60 for warming, thereby reducing the formation of condensation or frost on the wafers. During the heating process, the wafer is heated to a predetermined temperature by the heating module 102 within the heating device. Once the desired temperature is reached, the heating module 102 is turned off and the gate valve 103 is opened. The wafer is then removed by the first conveyor 60 and transferred back to the load lock chamber 10. At this point, the robot arm of the front-end transfer module (EFEM) removes the heated wafer from the load lock chamber 10 and transfers it to the external environment.

[0085] In this embodiment, both the load lock chamber 10 and the wafer heating device 50 are connected to a molecular pump 80 . The molecular pump 80 is used to provide a high vacuum state for the load lock chamber 10 and the wafer heating device 50 .

[0086] Although the present invention is disclosed as above, it is not limited thereto. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope defined by the claims.

Claims

1. A wafer heating device, characterized in that: include: cavity; A support ring is located in the cavity and is used to support the wafer; A heating module is provided inside the support ring, and is used to provide heat to the wafer. The heating module is used to provide heating light and irradiate the heating light onto the surface of the wafer.

2. The wafer heating device according to claim 1, wherein: The support ring has an inner side wall, the heating module is fixedly connected to the inner side wall, and the heating module is spaced apart from the top surface of the support ring, so that the heating module is spaced apart from the wafer.

3. The wafer heating device according to claim 1, wherein: The heating module includes a base and lamp beads arranged in a ring, grid or radial shape on the base, and the lamp beads include halogen lamp beads and / or LED lamp beads.

4. The wafer heating device according to claim 1, wherein: A plurality of support blocks are provided on the top surface of the support ring, and the support blocks are used to contact the wafer so as to space the wafer from the support ring.

5. The wafer heating device according to claim 4, wherein: The outer edge of the top surface of the support block is provided with a protrusion for limiting the edge of the wafer.

6. The wafer heating device according to claim 1, wherein: The wafer heating device further includes: a heat insulation module located above the support ring, wherein the heat insulation module and the heating module are spaced apart. When the support ring carries the wafer, the wafer is spaced apart from the heat insulation module.

7. The wafer heating device according to claim 6, wherein: The thermal insulation module includes a thermal insulation board.

8. The wafer heating device according to claim 6, wherein: The wafer heating device further includes: a supporting module, one end of which is fixedly connected to the supporting ring, and the supporting module is used to support the thermal insulation module.

9. The wafer heating device according to claim 8, wherein: A plurality of fixing portions are provided on the outer side wall of the support ring at intervals along the circumferential direction; The supporting module includes a plurality of supporting columns, one end of each supporting column is fixedly connected to the fixing portion.

10. The wafer heating device according to claim 9, wherein: The other end of the support column is connected to the top of the cavity.

11. The wafer heating device according to claim 1, wherein: The wafer heating device further comprises: a first temperature sensor, disposed on the support ring, configured to monitor the temperature of the wafer and transmit temperature information of the wafer; a second temperature sensor, provided on the heating module, for monitoring the temperature of the heating module and sending temperature information of the heating module; A controller is connected to the first temperature sensor and the heating module, and receives wafer temperature information sent from the first temperature sensor. When the wafer temperature exceeds a preset temperature, the controller controls the heating module to stop heating. The controller is also connected to the second temperature sensor, and is used to receive temperature information of the heating module sent from the second temperature sensor.

12. The wafer heating device according to claim 11, wherein: The wafer heating device further comprises: a first electrical connection post, located at the top of the cavity, the first electrical connection post being connected to the first temperature sensor and the second temperature sensor via a signal line; A second electrical connection column is located at the top of the cavity, and the second electrical connection column is connected to the heating module through a power line, so as to supply power to the heating module.

13. A semiconductor device, characterized in that: include: A load lock chamber that holds wafers and can be switched between vacuum and atmospheric pressure. a transfer chamber, communicating with the load lock chamber in a vacuum state, for transferring wafers in a vacuum state; a cooling module, in communication with the transfer chamber, for cooling the wafers from the transfer chamber; a process chamber, connected to the transfer chamber, for performing process treatment on the wafers that have undergone refrigeration treatment; The wafer heating device according to any one of claims 1 to 12 is used to heat the wafer after the process is performed.

14. The semiconductor device according to claim 13, wherein The transmission chamber comprises: The conveying device is used to convey the wafers to be processed from the load lock chamber to the process chamber, to convey the wafers after processing from the process chamber to the cavity, and to convey the wafers after heating from the cavity to the load lock chamber.

15. The semiconductor device according to claim 13, wherein The cavity includes a gate facing the transfer chamber; The wafer heating device further comprises: The gate valve is arranged on the cavity and is used to open or close the gate.

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