Metal substrate semiconductor chilling plate

Abstract

The utility model provides a metal substrate semiconductor chilling plate, which comprises a P-type semiconductor, an N-type semiconductor and a substrate group, and is characterized in that the substrate group comprises a metal plate, an epoxy ceramic heat-conducting glue layer covered on the metal plate and copper foil covered on epoxy ceramic heat-conducting glue; and epoxy structural adhesive used for sealing and shock prevention is filled between the two opposite substrate groups and surrounds all the P-type semiconductors and the N-type semiconductors. According to the structure, the bonding performance of the epoxy ceramic heat-conducting adhesive layer is excellent, so that the impact resistance of the refrigeration sheet is excellent, and the epoxy structural adhesive is filled between the two opposite substrate groups, so that the refrigeration sheet has a waterproof function, the overall structural strength of the refrigeration sheet can be enhanced, a buffering effect can be achieved when the refrigeration sheet falls off accidentally, and the service life of the refrigeration sheet is prolonged. And the impact resistance is effectively improved, so that the reliability of a product using the refrigeration sheet is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor refrigeration, in particular to a metal substrate semiconductor refrigeration sheet. Background Art

[0002] Semiconductor refrigeration chip, abbreviated as TEC, is a device that uses the thermoelectric effect of semiconductors to generate cooling capacity, also known as thermoelectric cooler. Semiconductor refrigeration chip has the characteristics of no noise, no vibration, no need for refrigerant, small size, light weight, etc., and it is reliable, easy to operate, and easy to adjust the cooling capacity.

[0003] Typically, existing semiconductor refrigeration chips generally use ceramic as a substrate. However, due to the high brittleness of ceramic, if accidentally dropped during use, the semiconductor refrigeration chip can be easily damaged. Therefore, improvements have been made to semiconductor refrigeration chips. Patent document CN114623623A discloses a TEC semiconductor refrigeration chip encapsulated using a metal panel. This relates to the field of semiconductor refrigeration chips and specifically comprises a P-type semiconductor, an N-type semiconductor, and a metal plate. An N-type semiconductor is distributed parallel to one side of the P-type semiconductor, and guide plates are fixed to the top and bottom of the P-type and N-type semiconductors. The surface of the guide plate is provided with a thermally conductive insulating adhesive layer, and the metal plate is connected to the surface of the thermally conductive insulating adhesive layer. This TEC semiconductor refrigeration chip encapsulated using a metal panel uses an aluminum alloy plate as the metal plate. While having excellent temperature transfer performance, it also greatly enhances the strength of the semiconductor refrigeration chip and improves its stress-bearing capacity, which helps prevent the semiconductor refrigeration chip from breaking due to its own fragility during installation or use.

[0004] However, this solution still has defects. A thermally conductive insulating adhesive layer 4 and an insulating layer 6 are set between the guide plate 3 and the metal plate 5. The thermally conductive insulating adhesive layer 4 and the insulating layer 6 greatly hinder the transfer of cold and heat, resulting in low cooling and heat dissipation efficiency. In addition, this solution does not disclose the packaging method between the two relative metal plates 5. Summary of the Invention

[0005] The utility model aims to solve the problem of the transfer efficiency of cooling and heat in the above-mentioned prior art, as well as the problem of the impact resistance of the semiconductor refrigeration plate.

[0006] In order to solve the above technical problems, the present invention provides a metal substrate semiconductor refrigeration plate, including a P-type semiconductor, an N-type semiconductor and a substrate group arranged at both ends of the P-type semiconductor and the N-type semiconductor, the substrate group including a metal plate, an epoxy ceramic thermal conductive adhesive layer covering the metal plate and a copper foil covering the epoxy ceramic thermal conductive adhesive, the metal plate, the epoxy ceramic thermal conductive adhesive layer and the copper foil are bonded by hot pressing, the P-type semiconductor and the N-type semiconductor are electrically connected to the etched copper foil by soldering; between the two opposite substrate groups, all the P-type semiconductors and N-type semiconductors are filled with epoxy structural adhesive for sealing and shockproofing.

[0007] In the above structure, an epoxy ceramic thermal conductive adhesive layer is set between the metal plate and the copper foil, and then the metal plate, the epoxy ceramic thermal conductive adhesive layer and the copper foil are tightly connected by heating and pressing. The epoxy ceramic thermal conductive adhesive layer has excellent bonding performance, so the cooling plate has excellent impact resistance. In addition, the epoxy ceramic thermal conductive adhesive layer has excellent voltage resistance and aging resistance, which makes the overall performance of the cooling plate excellent.

[0008] The epoxy ceramic thermal conductive adhesive layer is used to replace the thermal conductive insulating adhesive layer and the insulating layer in the existing technology, making the transfer of cold and heat more direct and effectively improving the performance of the refrigeration plate.

[0009] Filling epoxy structural adhesive between the two opposing substrate groups not only makes the cooling plate waterproof, but also enhances the overall structural strength of the cooling plate. When the cooling plate accidentally falls, it can act as a buffer, effectively improving the impact resistance, and thus improving the reliability of the product using the cooling plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a schematic structural diagram of an embodiment of the present utility model;

[0011] Figure 2 This is a schematic diagram of the structure of the cooling plate in the embodiment of the present utility model;

[0012] Figure 3 This is a schematic diagram of the structure of the heat plate in the embodiment of the present utility model;

[0013] Figure 4 A top view of an embodiment of the present utility model;

[0014] Figure 5 This is a schematic diagram of an embodiment of the present invention in which the metal plate is circular. DETAILED DESCRIPTION

[0015] The present invention will be described in further detail below with reference to the accompanying drawings and specific implementation methods.

[0016] like Figures 1 to 5As shown, a metal substrate semiconductor refrigeration plate includes a P-type semiconductor 1, an N-type semiconductor 2 and a substrate group 3 arranged at both ends of the P-type semiconductor 1 and the N-type semiconductor 2.

[0017] The substrate assembly 3 includes a metal plate 31 , an epoxy ceramic thermal conductive adhesive layer 32 covering the metal plate 31 , and a copper foil 33 covering the epoxy ceramic thermal conductive adhesive layer 32 . The metal plate 31 , the epoxy ceramic thermal conductive adhesive layer 32 , and the copper foil 33 are bonded together by hot pressing.

[0018] In this embodiment, aluminum plate is selected as the metal plate 31 due to its high cost performance. Usually, the thickness of the aluminum plate is 0.2 mm-2 mm. In this embodiment, the thickness of the aluminum plate is 0.5 mm-1 mm.

[0019] Typically, the copper foil 33 has a thickness of 0.05 mm to 0.8 mm. In this embodiment, the copper foil 33 has a thickness of 0.1 mm to 0.3 mm.

[0020] The epoxy ceramic thermal conductive adhesive layer 32 has excellent adhesion, voltage resistance and aging resistance. The epoxy ceramic thermal conductive adhesive layer 32 is coated between the metal plate 31 and the copper foil 33, and then the metal plate 31, the epoxy ceramic thermal conductive adhesive layer 32 and the copper foil 33 are tightly connected by heating and pressing. The resulting refrigeration plate has excellent impact resistance.

[0021] Generally, the coating thickness of epoxy ceramic thermal conductive adhesive is 30μm-150μm. In this embodiment, the coating thickness of epoxy ceramic thermal conductive adhesive is 50μm-100μm. Therefore, after using the epoxy ceramic thermal conductive adhesive layer 32 to replace the thermal conductive insulating adhesive layer and the insulating layer in the prior art, the transfer of cold and heat is more direct, which can effectively improve the performance of the refrigeration plate.

[0022] Typically, the epoxy ceramic thermal conductive adhesive layer is an aluminum oxide thermal conductive adhesive layer, a boron nitride thermal conductive adhesive layer, an aluminum nitride thermal conductive adhesive layer, or a silicon dioxide thermal conductive adhesive layer.

[0023] After the hot pressing process is completed, the formed substrate group 3 is etched according to different circuit designs to obtain Figure 2 and Figure 3 The cold plate 3a and the hot plate 3b are shown in FIG.

[0024] The P-type semiconductor 1 and the N-type semiconductor 2 are soldered between the cold plate 3 a and the hot plate 3 b , and the P-type semiconductor 1 and the N-type semiconductor 2 are soldered on the etched copper foil 33 .

[0025] Between the two opposing substrate assemblies 3 , in this embodiment, between the cold plate 3 a and the hot plate 3 b , an epoxy structural adhesive 4 for sealing and shockproofing is filled around all the P-type semiconductors 1 and N-type semiconductors 2 .

[0026] like Figure 4 As shown, in this embodiment, the epoxy structural adhesive 4 is filled at least between the outermost P-type semiconductor 1 and the N-type semiconductor 2 .

[0027] Filling the epoxy structural adhesive 4 between the cold plate 3a and the hot plate 3b not only makes the cooling plate waterproof, but also enhances the overall structural strength of the cooling plate. When the cooling plate accidentally falls, it can play a buffering role, effectively improve the impact resistance, and thus improve the reliability of the product using the cooling plate.

[0028] To meet different product requirements, the metal plate can be rectangular, circular or ring-shaped. Figures 1 to 4 The metal plates shown in FIG. 1 are rectangular.

[0029] In addition to the above styles, the metal plate may also be provided with a boss 5 on the outer surface of the metal plate, and the boss 5 and the outer surface of the substrate assembly 3 form an accommodating cavity.

[0030] Since sealing is not required, the boss 5 can be continuous or discontinuous. The boss 5 can be used to transfer cold or heat. At the same time, the boss 5 can form a receiving cavity with a height difference between the outer surface of the metal plate and the outer surface of the boss 5. A coil or magnet can be set in the receiving cavity, which can be used to make a wireless magnetic charger.

[0031] In the structure of this solution, after the epoxy ceramic thermal conductive adhesive layer 32 is provided, the refrigeration plate has excellent impact resistance due to the excellent bonding performance of the epoxy ceramic thermal conductive adhesive layer 32; the epoxy structural adhesive 4 is filled between the two relative substrate groups, which not only makes the refrigeration plate waterproof, but also enhances the overall structural strength of the refrigeration plate. When the refrigeration plate accidentally falls, it can play a buffering role, effectively improve the impact resistance, and thus improve the comprehensive performance of the product using the refrigeration plate.

Claims

1. A metal substrate semiconductor refrigeration plate, comprising a P-type semiconductor, an N-type semiconductor, and a substrate assembly disposed at both ends of the P-type semiconductor and the N-type semiconductor, characterized in that: The substrate assembly includes a metal plate, an epoxy ceramic thermal conductive adhesive layer covering the metal plate, and a copper foil covering the epoxy ceramic thermal conductive adhesive. The metal plate, the epoxy ceramic thermal conductive adhesive layer, and the copper foil are bonded by thermal pressing. The P-type semiconductor and the N-type semiconductor are electrically connected to the etched copper foil by soldering. Epoxy structural adhesive for sealing and shockproofing is filled around all P-type semiconductors and N-type semiconductors between the two opposite substrate groups.

2. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The metal plate is an aluminum plate, and the thickness of the aluminum plate is 0.2mm-2mm.

3. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The thickness of the copper foil is 0.05 mm to 0.8 mm.

4. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The thickness of the epoxy ceramic thermal conductive adhesive is 30 μm-150 μm.

5. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The epoxy ceramic thermal conductive adhesive layer is an aluminum oxide thermal conductive adhesive layer, a boron nitride thermal conductive adhesive layer, an aluminum nitride thermal conductive adhesive layer or a silicon dioxide thermal conductive adhesive layer.

6. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The epoxy structural adhesive is filled at least between the outermost circle of the P-type semiconductor and the N-type semiconductor.

7. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The metal plate is rectangular.

8. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: The metal plate is circular or annular.

9. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: A continuous boss is provided on the outer surface of the substrate group on one side, and the boss and the outer surface of the substrate group form an accommodating cavity.

10. The metal substrate semiconductor refrigeration sheet according to claim 1, characterized in that: A discontinuous boss is provided on the outer surface of the substrate group on one side, and the boss and the outer surface of the substrate group form an accommodating cavity.

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