Semiconductor deposition apparatus

Abstract

The utility model discloses semiconductor deposition equipment which comprises a shell, a spraying plate and a tray, the spraying plate and the tray are installed in the shell, and the tray is used for bearing a deposition base body. A spraying plate is arranged in the shell and divides the interior of the shell into a mixing chamber and a reaction chamber which are communicated with each other, a gas inlet of the mixing chamber is provided with a diffuser in a matched mode, and exogenous gas flows into the mixing chamber through the diffuser; the tray is located in the reaction chamber and is arranged opposite to the spraying plate, and at least one of the tray and the spraying plate is arranged to be capable of adjusting the distance relative to the other one. According to the reaction chamber, the gas mixing effect can be enhanced through the arrangement of the diffuser and the mixing chamber, and the optimal distance between the tray and the spraying plate can be obtained through multiple experiments, so that the flowing mode of the gas in the reaction chamber and the uniformity of the gas concentration can be adjusted, and the ideal deposition effect can be achieved.

Description

Technical Field

[0001] The utility model belongs to the technical field of atomic layer deposition, in particular to a semiconductor deposition device. Background Art

[0002] Atomic layer deposition (ALD) is a method that alternately introduces pulses of gaseous precursors into a reactor, causing them to chemically adsorb and react on a substrate to form a deposited film. In ALD equipment, the gas flow pattern and gas concentration within the chamber are crucial to deposition quality.

[0003] The gas flow pattern within the chamber is typically influenced by the gas flow rate, chamber pressure, and the distance between the showerhead and the tray. The gas flow pattern can be laminar or turbulent, depending on factors such as the flow rate and system geometry. The gas concentration distribution within the chamber is also affected by the gas flow rate, chamber pressure, and the distance between the showerhead and the tray.

[0004] When the distance between the shower plate and the tray is close, the gas may concentrate near the sample surface, resulting in faster but uneven deposition. When the distance is greater, the gas is more uniform, but the flow rate may be lower and the deposition time longer. Therefore, it is difficult to balance deposition uniformity and deposition time within the ALD tool, resulting in relatively low deposition efficiency.

[0005] Therefore, in order to solve the above technical problems, it is necessary to provide a semiconductor deposition device. Utility Model Content

[0006] The purpose of the present invention is to provide a semiconductor deposition device that can solve the problem that deposition uniformity and deposition time in the above-mentioned ALD device cannot be taken into account at the same time, resulting in relatively low deposition efficiency.

[0007] In order to achieve the above-mentioned purpose, the technical solution provided by a specific embodiment of the present invention is as follows:

[0008] A semiconductor deposition apparatus comprises a housing, a shower plate mounted within the housing, and a tray for carrying a deposition substrate; the shower plate divides the interior of the housing into a mixing chamber and a reaction chamber that are interconnected; a diffuser is provided at an air inlet of the mixing chamber, through which an exogenous gas flows into the mixing chamber;

[0009] The tray is located in the reaction chamber and is arranged opposite to the shower plate. At least one of the tray and the shower plate is arranged to be able to adjust the distance relative to the other.

[0010] In one or more embodiments of the present invention, a diffusion chamber is provided in the diffuser, and a diffusion hole connecting the mixing chamber and the diffusion chamber is further provided in the diffuser, and an inner wall of the diffusion chamber is configured as a curved surface.

[0011] In one or more embodiments of the present invention, the inner wall of the diffusion chamber is hemispherical;

[0012] and / or, the outer wall of the diffuser is hemispherical;

[0013] And / or, the opening direction of the diffusion holes on the diffuser forms an angle with the plate surface of the spray plate;

[0014] And / or, the diffusion hole is not provided at a position on the diffuser closest to the shower plate.

[0015] In one or more embodiments of the present invention, an adjustment assembly is connected between the tray and the shell; the adjustment assembly includes an adjustment nut mounted on the shell and an adjustment rod threadedly connected to the adjustment nut; one end of the adjustment rod extends into the shell to support the tray, and the other end of the adjustment rod is arranged outside the shell.

[0016] In one or more embodiments of the present invention, the semiconductor deposition equipment further includes a heating element, the tray is mounted on the heating element, the adjusting rod is used to support the heating element, and an insulator is provided between the adjusting rod and the heating element.

[0017] In one or more embodiments of the present invention, the heat insulator is provided with a groove, and the adjustment rod is smoothly arranged at one end close to the heat insulator and can be movably held in the groove.

[0018] In one or more embodiments of the present invention, the semiconductor deposition equipment further includes an isolation cover, and the isolation cover is provided on one end of the adjustment rod provided outside the shell.

[0019] In one or more embodiments of the present invention, the semiconductor deposition equipment further includes a vacuum pumping assembly connected to the interior of the shell, and the adjustment rod is provided with a connecting hole connecting the interior of the shell and the interior of the isolation cover.

[0020] In one or more embodiments of the present invention, the semiconductor deposition equipment further includes an adjustment ring detachably mounted on the inner wall of the shell, and the shower plate is connected to the adjustment ring to cooperate with the shell to form the mixing chamber.

[0021] In one or more embodiments of the present invention, the shell includes a first shell and a second shell that match each other, the adjustment ring is installed in the first shell, and the tray is installed in the second shell.

[0022] Compared to existing technologies, in the semiconductor deposition equipment of the present invention, the exogenous gas first enters a mixing chamber for thorough mixing before entering a reaction chamber to react with the substrate on the tray to form a deposited film on the substrate. The provision of a diffuser and mixing chamber enhances gas mixing. Through multiple experiments, the optimal distance between the tray and shower plate was determined, allowing the gas flow pattern in the reaction chamber and the uniformity of gas concentration to be adjusted to achieve the desired deposition effect. Therefore, the semiconductor deposition equipment of the present invention balances film quality and film coating time, ensuring film coating efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 This is a schematic structural diagram of a semiconductor deposition device in one embodiment of the present invention;

[0025] Figure 2 for Figure 1 A in the middle is an enlarged schematic diagram;

[0026] Figure 3 for Figure 1 The enlarged schematic diagram of point B in the middle;

[0027] Figure 4 It is a cross-sectional schematic diagram of an adjusting rod in one embodiment of the present utility model.

[0028] Description of main reference numerals:

[0029] 1. Shell; 2. Spray plate; 3. Tray; 4. Base; 5. Diffuser; 51. Diffusion hole; 6. Adjustment assembly; 61. Adjustment nut; 62. Adjustment rod; 7. Heating element; 8. Insulator; 9. Isolation cover; 10. Adjustment ring; 11. First shell; 12. Second shell; 13. Vacuum pump; 14. Vacuum tube. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the following will be combined with the drawings of the embodiments of the present invention to clearly and completely describe the technical solutions of the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0031] Reference Figure 1 The semiconductor deposition apparatus in one embodiment of the present invention includes a housing 1, a shower plate 2 mounted within the housing 1, and a tray 3 for supporting a deposition substrate 4. The shower plate 2 divides the interior of the housing 1 into a mixing chamber and a reaction chamber that communicate with each other. The air inlet of the mixing chamber is provided with a diffuser 5, through which external gas flows into the mixing chamber. The tray 3 is located within the reaction chamber and is disposed opposite the shower plate 2. At least one of the tray 3 and the shower plate 2 is configured to be adjustable relative to the other. The shower plate 2 is provided with air holes for airflow.

[0032] Therefore, when depositing on the substrate 4, the exogenous gas enters the mixing chamber through the diffuser 5, enters the reaction chamber through the shower plate 2 after mixing in the mixing chamber, and reacts on the substrate 4 to form a deposited film.

[0033] It is understandable that in order to ensure the quality and efficiency of substrate 4 deposition, the optimal distance between the tray 3 and the shower plate 2 can be obtained through experiments to adjust the gas flow pattern in the reaction chamber and the uniformity of the gas concentration, thereby achieving an ideal deposition effect.

[0034] Reference Figure 1 and Figure 2 A diffusion chamber is provided in the diffuser 5, and a diffusion hole 51 connecting the mixing chamber and the diffusion chamber is also provided in the diffuser 5, and the inner wall of the diffusion chamber is set as a curved surface. When the gas enters the diffusion chamber, compared with the conventional diffuser 5 in the form of a rectangular parallelepiped or a cube, due to the right-angle area on its inner wall, the airflow will form obvious vortices in the right-angle area. The inner wall of the diffusion chamber is set as a curved surface so that the gas diffuses everywhere, thereby avoiding the generation of gas vortices in the initial diffusion link. In this embodiment, after the airflow collides and diffuses through the inner wall of the diffusion chamber, it finally enters the mixing chamber through the diffusion hole 51, which can make the gas more uniform before contacting the spray plate 2.

[0035] Reference Figure 2 In this embodiment, the inner wall of the diffusion chamber is hemispherical, and the outer wall of the diffuser 5 is also hemispherical. In other embodiments, the inner wall of the diffuser 5 can also be other shapes, such as a semi-ellipsoidal shape.

[0036] Further, refer to Figure 1 and Figure 2 The opening orientation of the diffusion holes 51 on the diffuser 5 forms an angle with the surface of the shower plate 2; the diffuser 5 closest to the shower plate 2 does not have any diffusion holes 51. The orientation and location of the diffusion holes 51 ensure that the gas first mixes in the diffusion chamber of the diffuser 5 before entering the mixing chamber and finally enters the reaction chamber through the shower plate 2, thereby ensuring the deposition quality of the film on the substrate 4. Therefore, the gas does not enter the reaction chamber directly through the diffusion holes 51 and the pores in the shower plate 2 without mixing.

[0037] Reference Figure 1 and Figure 3 , an adjustment assembly 6 is connected between the tray 3 and the shell 1; the adjustment assembly 6 includes an adjustment nut 61 installed on the shell 1 and an adjustment rod 62 threadedly connected to the adjustment nut 61; one end of the adjustment rod 62 extends into the shell 1 to support the tray 3, and the other end of the adjustment rod 62 is arranged outside the shell 1. Therefore, when depositing a film on the substrate 4, the distance between the tray 3 and the spray plate 2 can be adjusted by simply rotating the adjustment rod 62 outside the shell 1, which improves the convenience of operation. In this embodiment, three adjustment rods 62 are provided, so that the tray 3 can be effectively supported. In other embodiments, the number of adjustment rods 62 can also be four, five or even more, as long as it can play the role of supporting the tray 3.

[0038] Reference Figure 1 and Figure 3 The semiconductor deposition apparatus in this embodiment further includes a heater 7, on which the tray 3 is mounted. An adjustment rod 62 is used to support the heater 7, and an insulator 8 is provided between the adjustment rod 62 and the heater 7. The heater 7 is in contact with the tray 3, thereby providing a suitable temperature for deposition on the substrate 4 and further ensuring deposition quality. The insulator 8 isolates the heater 7 from the adjustment rod 62, thereby reducing heat loss.

[0039] Reference Figure 1 and Figure 3 The insulator 8 defines a groove, and the end of the adjustment rod 62 closest to the insulator 8 is smoothly rounded and movably abuts within the groove. Therefore, when the adjustment rod 62 is rotated to adjust the height, the engagement between the adjustment rod 62 and the groove of the insulator 8 reduces the risk of the adjustment rod 62 becoming stuck within the insulator 8, thereby ensuring that the adjustment rod 62 can effectively adjust the height of the tray 3 and the distance between the tray 3 and the spray plate 2. In this embodiment, the end of the adjustment rod 62 closest to the insulator 8 can be spherical.

[0040] Reference Figure 1 and Figure 3The semiconductor deposition apparatus in this embodiment further includes an isolation cover 9, which covers the end of the adjustment rod 62 disposed outside the housing 1. The isolation cover 9 can seal the end of the adjustment rod 62 disposed outside the housing 1, thereby reducing the interference that external gas may cause to the interior of the housing 1.

[0041] Reference Figure 3 The semiconductor deposition apparatus in this embodiment further includes a vacuum pumping assembly connected to the interior of the housing 1, and the adjusting rod 62 is provided with a connecting hole connecting the interior of the housing 1 and the interior of the isolation cover 9 (combined with Figure 4 The vacuum pump assembly includes a vacuum pump 13 and a vacuum tube 14 connecting the vacuum pump 13 and the housing 1. When the vacuum pump assembly is in operation, it can not only create a vacuum environment inside the housing 1, but also create a vacuum environment inside the isolation cover 9 through the connecting hole in the adjustment rod 62, thereby ensuring the deposition quality of the film on the substrate 4.

[0042] Reference Figure 1 The semiconductor deposition apparatus of this embodiment further includes an adjustment ring 10 detachably mounted on the inner wall of the housing 1. The shower plate 2 is connected to the adjustment ring 10 to cooperate with the housing 1 to form a mixing chamber. It will be appreciated that by replacing the adjustment ring 10 with different sizes, the volume of the mixing chamber and the distance between the shower plate 2 and the tray 3 can be adjusted to ensure that the mixing chamber can effectively adapt to different gas sources.

[0043] Reference Figure 1 In an optional embodiment, the housing 1 includes a first housing 11 and a second housing 12 that cooperate with each other, the adjustment ring 10 is installed in the first housing 11, and the tray 3 is installed in the second housing 12. The provision of the first housing 11 and the second housing 12 facilitates the installation of the spray plate 2 and the tray 3.

[0044] Reference Figure 1 In an optional embodiment, a removable adjustment plate is mounted within the first housing 111. The diffuser 5 and adjustment ring 10 are mounted on the adjustment plate. The aforementioned mixing chamber is formed between the adjustment plate, adjustment ring 10, and spray plate 2. Therefore, different sizes of adjustment plates, adjustment rings 10, and spray plates 2 can be used to adjust the volume of the mixing chamber according to different gas sources, thereby ensuring uniform gas mixing.

[0045] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be encompassed within the present invention. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

[0046] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A semiconductor deposition device, comprising a housing (1), a shower plate (2) installed in the housing (1), and a tray (3), wherein the tray (3) is used to carry a deposition substrate (4), and is characterized in that: The spray plate (2) divides the interior of the shell (1) into a mixing chamber and a reaction chamber that are interconnected. The air inlet of the mixing chamber is provided with a diffuser (5), and the exogenous gas flows into the mixing chamber through the diffuser (5). The tray (3) is located in the reaction chamber and is arranged opposite to the spray plate (2); at least one of the tray (3) and the spray plate (2) is arranged to be capable of adjusting the distance relative to the other.

2. The semiconductor deposition apparatus according to claim 1, wherein: A diffusion chamber is provided in the diffuser (5), and a diffusion hole (51) is further provided in the diffuser (5) for connecting the mixing chamber and the diffusion chamber. The inner wall of the diffusion chamber is configured as a curved surface.

3. The semiconductor deposition apparatus according to claim 2, wherein: The inner wall of the diffusion chamber is hemispherical; and / or, the outer wall of the diffuser (5) is hemispherical; And / or, the opening direction of the diffusion hole (51) on the diffuser (5) forms an angle with the plate surface of the spray plate (2); And / or, the diffusion hole (51) is not provided at a position on the diffuser (5) that is closest to the spray plate (2).

4. The semiconductor deposition apparatus according to claim 1, wherein: An adjustment assembly (6) is connected between the tray (3) and the shell (1); the adjustment assembly (6) comprises an adjustment nut (61) mounted on the shell (1) and an adjustment rod (62) threadedly connected to the adjustment nut (61); one end of the adjustment rod (62) extends into the shell (1) for supporting the tray (3), and the other end of the adjustment rod (62) is arranged outside the shell (1).

5. The semiconductor deposition apparatus according to claim 4, wherein: It also includes a heating element (7), the tray (3) is mounted on the heating element (7), the adjustment rod (62) is used to support the heating element (7), and a heat insulator (8) is provided between the adjustment rod (62) and the heating element (7).

6. The semiconductor deposition apparatus according to claim 5, wherein: The heat insulator (8) is provided with a groove, and the adjustment rod (62) is smoothly arranged near one end of the heat insulator (8) and can be movably supported in the groove.

7. The semiconductor deposition apparatus according to claim 4, wherein: It also includes an isolation cover (9), which covers one end of the adjustment rod (62) disposed outside the housing (1).

8. The semiconductor deposition apparatus according to claim 7, wherein: It also includes a vacuum pumping assembly connected to the interior of the shell (1), and the adjusting rod (62) is provided with a communication hole connecting the interior of the shell (1) and the interior of the isolation cover (9).

9. The semiconductor deposition apparatus according to claim 1, wherein: It also includes an adjustment ring (10) detachably mounted on the inner wall of the shell (1), and the spray plate (2) is connected to the adjustment ring (10) to cooperate with the shell (1) to form the mixing chamber.

10. The semiconductor deposition apparatus according to claim 9, wherein: The housing (1) comprises a first housing (11) and a second housing (12) that fit together, the adjustment ring (10) is installed in the first housing (11), and the tray (3) is installed in the second housing (12).

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