Illuminating lamp related to red light wave band

Abstract

The utility model provides an illumination lamp related to a red light wave band, which comprises at least four red light wave band chips, wherein the emission peak wavelengths of the red light wave band chips are respectively positioned in a wave band range of 650 nm to 680 nm, a wave band range of 680 nm to 730 nm, a wave band range of 730 nm to 770 nm and a wave band range of 770 nm to 810 nm; the half-wave width of the red light chip with at least two emission peak wavelengths located in different wave band ranges is larger than or equal to 30 nm, so that compared with an existing lamp, the light spectrum of the red light band is complemented, the actual light emitting effect of the illumination lamp related to the red light band is closer to the effect of sunlight, and the healthy illumination requirement of people is met.

Description

Technical Field

[0001] The utility model relates to the field of lighting, in particular to a lighting fixture involving an infrared light band. Background Art

[0002] With the continuous development of LED lighting technology, lighting must not only be energy-efficient but also offer healthy and comfortable light quality, which is gaining increasing attention. With the continuous emergence of new technologies, people are placing higher demands on lighting quality and comfort, especially for healthy lighting. Sunlight plays a vital role in human health, but due to changes in production and lifestyle in modern society, people are increasingly less active outdoors and rely too heavily on artificial lighting. Consequently, people are eager for artificial lighting to achieve effects similar to those of sunlight.

[0003] Since the visible light wavelength of human beings is 400nm-750nm, most of the current lighting fixtures only meet the lighting needs, and the corresponding luminous bands are concentrated in the range of visible light wavelengths, and the spectrum in the non-visual band is completely missing, such as Figure 1 The comparison diagram of the luminous spectrum of an existing high-crystal-rendering-index LED light source and the sunlight spectrum is shown. From the figure, it can be seen that the spectrum of the existing LED light source in the band greater than 650nm is seriously lacking.

[0004] However, in addition to providing illumination within the visible light spectrum, natural sunlight also has positive effects on human visual health, physiological well-being, and comfort. It not only influences human biorhythms but also significantly impacts the development of normal vision. For example, infrared light can enhance immunity, improve microcirculation, promote metabolism, promote wound healing, and improve skin. However, existing lighting fixtures lack the red wavelength range, making their actual luminous effects incomparable to sunlight. Prolonged reliance on artificial lighting can lead to physiological disturbances in modern people. Utility Model Content

[0005] One purpose of the present invention is to provide a lighting fixture involving the red light band, wherein the luminous spectrum of the lighting fixture involving the red light band can relate to the red light band and highly restore the sunlight spectrum in the red light band to provide healthy lighting.

[0006] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the lighting fixture involving the red light band supplements the spectrum in the red light band compared to the existing lamps, so that the actual luminous effect of the lighting fixture involving the red light band is closer to the effect of sunlight and meets people's healthy lighting needs.

[0007] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the lighting fixture involving the red light band has higher spectral continuity in the red light band, thereby being able to better restore the sunlight spectrum and provide a luminous effect comparable to sunlight.

[0008] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the lighting fixture involving the red light band includes at least four red light band chips, wherein the emission peak wavelengths of the four red light band chips are respectively located in different emission peak bands, so as to better restore the sunlight spectrum based on the setting of the emission peak wavelength.

[0009] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the half-wave width of at least two of the four red light band chips located in different emission peak bands is greater than or equal to 30nm, so as to ensure the spectral continuity of the lighting fixture involving the red light band in the red light band, effectively reduce the gaps and peaks in the spectrum, and thus better restore the corresponding spectrum of sunlight in the red light band.

[0010] Another object of the present invention is to provide a lighting fixture involving a red light band, wherein the emission peak bands of the four red light band chips are respectively an emission peak band with a starting wavelength of 650nm and an ending wavelength of 680nm, an emission peak band with a starting wavelength of 680nm and an ending wavelength of 730nm, an emission peak band with a starting wavelength of 730nm and an ending wavelength of 770nm, and an emission peak band with a starting wavelength of 770nm and an ending wavelength of 810nm, so as to meet the corresponding spectral settings based on the reasonable selection of the emission peaks of the red light band chips, thereby better restoring the spectrum of sunlight in the red light band.

[0011] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the emission peak wavelengths of the four red light band chips are selected from 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, respectively, and are sequentially named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4, that is, the red light band chips with an emission peak wavelength of 666nm±5nm are respectively named red light band chips L1, the red light band chip with an emission peak wavelength of 710nm±5nm is the red light band chip L2, the red light band chip with an emission peak wavelength of 753nm±5nm is the red light band chip L3, and the red light band chip with an emission peak wavelength of 786nm±5nm is the red light band chip L4, so that the emission peak of the lighting fixture involving the red light band in the red light band spectrum can be close to the peak of the sunlight spectrum in the red light band, thereby better restoring the spectrum of sunlight in the red light band.

[0012] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm, so as to ensure the spectral continuity of the lighting fixture involving the red light band in the red light band, effectively reduce the gaps and peaks in the spectrum, and thus better restore the corresponding spectrum of sunlight in the red light band.

[0013] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the half-wave widths of the red light band chip L2 and the red light band chip L3 are greater than or equal to 45 nm, thereby improving the continuity between the emission peaks formed by the red light band chip L1, the red light band chip L2, the red light band chip L3 and the red light band chip L4, avoiding the occurrence of gaps in the luminous spectrum of the lighting fixture involving the red light band in the red light band, and improving the degree of restoration of the sunlight spectrum in the red light band by the lighting fixture involving the red light band.

[0014] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the lighting fixture involving the red light band includes at least one first band chip, wherein the emission peak wavelength of the first band chip is within the band range of 420nm to 580nm, so as to meet the coverage of the lighting fixture involving the red light band in the visible light band and ensure the lighting effect of the lighting fixture involving the red light band.

[0015] Another object of the present invention is to provide a lighting fixture involving the red light band, wherein the emission peak wavelength of the first band chip is selected from one of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so as to match the peak distribution of the sunlight spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture involving the red light band.

[0016] Another object of the present utility model is to provide a lighting fixture involving an infrared light band, wherein the lighting fixture involving an infrared light band comprises at least four chips of the first wavelength band, and the emission peak wavelengths of the four chips of the first wavelength band are in the wavelength range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so that the luminous spectrum of the lighting fixture involving an infrared light band can approach the sunlight spectrum, so as to better restore the corresponding sunlight spectrum.

[0017] Another object of the present invention is to provide a lighting fixture involving an infrared light band, wherein the lighting fixture involving an infrared light band uses phosphors having emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm, and simultaneously performs wavelength conversion matching on the first band chip to further match the corresponding sunlight spectrum, thereby providing a lighting effect comparable to sunlight.

[0018] Another object of the present invention is to provide a lighting fixture involving an infrared light band, wherein the light-emitting method involving the infrared light band divides the emission peak wavelengths into four emission peak bands of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm, and at least four red light band chips whose emission peak wavelengths are located in the four emission peak bands are selected, and at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30nm, so as to meet the corresponding spectral setting based on the reasonable selection of the emission peaks of the red light band chips and help to improve the continuity of the spectrum.

[0019] According to one aspect of the present invention, the present invention provides a lighting fixture involving the red light band, wherein the lighting fixture involving the red light band includes at least four red light band chips whose emission peak wavelengths are respectively located in the band range of 650nm-680nm, the band range of 680nm-730nm, the band range of 730nm-770nm and the band range of 770nm-810nm, and the half-wave width of the red light chip having at least two emission peak wavelengths located in different band ranges is greater than or equal to 30nm.

[0020] In one embodiment, the emission peak wavelengths of the four red light band chips are respectively selected from the band ranges of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are sequentially named as red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm.

[0021] In one embodiment, the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45 nm.

[0022] In one embodiment, the peak emission wavelength of the red light band chip L1 is 666 nm, the peak emission wavelength of the red light band chip L2 is 710 nm, the peak emission wavelength of the red light band chip L3 is 755 nm, and the peak emission wavelength of the red light band chip L4 is 783 nm.

[0023] In one embodiment, the half-wave width of the red light band chip L1 is 14 nm, the half-wave width of the red light band chip L2 is 49 nm, the half-wave width of the red light band chip L3 is 51 nm, and the half-wave width of the red light band chip L4 is 19 nm.

[0024] In one embodiment, the peak emission wavelength of the red light band chip L1 is 670 nm, the peak emission wavelength of the red light band chip L2 is 710 nm, the peak emission wavelength of the red light band chip L3 is 755 nm, and the peak emission wavelength of the red light band chip L4 is 783 nm.

[0025] In one embodiment, the half-wave width of the red light band chip L1 is 14 nm, the half-wave width of the red light band chip L2 is 49 nm, the half-wave width of the red light band chip L3 is 71 nm, and the half-wave width of the red light band chip L4 is 19 nm.

[0026] In one embodiment, the lighting fixture involving the red light band includes at least one first wavelength band chip, wherein the emission peak wavelength of the first wavelength band chip is within the wavelength range of 420nm to 580nm.

[0027] In one embodiment, the lighting fixture involving the red light band includes at least four chips in the first band, and the emission peak wavelengths of the four chips in the first band are in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

[0028] In one embodiment, the lighting fixture involving the red light band uses phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm to simultaneously perform wavelength conversion matching on the first band chip.

[0029] Further objectives and advantages of the present invention will be fully reflected through understanding of the following description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a comparison chart of the luminous spectrum of an existing high-crystal-rendering LED light source and the sunlight spectrum.

[0031] Figure 2 The spectrum of sunlight with a color temperature of 5600K in the 350nm-810nm band.

[0032] Figure 3 FIG. 1 is a schematic diagram of a light emission spectrum of a lighting fixture in the red light band according to a first embodiment of the present invention.

[0033] Figure 4 FIG. 4 is a schematic diagram comparing the luminous spectrum of the red light-related lighting fixture according to the first embodiment of the present invention with the spectrum of sunlight at a color temperature of 5600K.

[0034] Figure 5 FIG. 4 is a schematic diagram of a light emission spectrum of a lighting fixture in the red light band according to a second embodiment of the present invention.

[0035] Figure 6 FIG. 4 is a schematic diagram comparing the luminous spectrum of the red light band lighting fixture according to the second embodiment of the present invention with the spectrum of sunlight at a color temperature of 5600K. DETAILED DESCRIPTION

[0036] The following description is intended to disclose the present invention and enable those skilled in the art to implement the present invention. The preferred embodiments described below are provided for illustrative purposes only, and those skilled in the art will readily appreciate other obvious variations. The basic principles of the present invention as defined in the following description may be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the present invention.

[0037] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms cannot be understood as limiting the present invention.

[0038] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the elements may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0039] With reference to the accompanying drawings of the present utility model Figures 2 to 6The present invention provides a lighting fixture involving the red light band, whose luminous spectrum can involve the red light band, making up for the lack of the luminous spectrum of existing lamps in the red light band, and highly restoring the sunlight spectrum in the red light band, so that the actual luminous effect of the lighting fixture involving the red light band is closer to the effect of sunlight, and can provide artificial lighting comparable to sunlight, reducing the health problems caused by the lack of sunlight exposure due to the reduction of outdoor activities of people in modern society, so as to provide healthy lighting.

[0040] Specifically, the present invention selects four emission peak bands within the wavelength range of 650nm to 810nm, with the wavelength of the absorption peak as the boundary, and selects red light band chips with at least four emission peak wavelengths respectively within the four emission peak bands, so that the spectrum of sunlight within the wavelength range of 650nm to 810nm can be close to that of sunlight, thereby supplementing the lack of the existing lamp's luminous spectrum in the red light band and providing healthy lighting.

[0041] In detail, the utility model selects four emission peak bands in the wavelength range of 650nm to 810nm of the sunlight spectrum with the wavelength of the absorption peak as the boundary, namely, the emission peak band with a starting wavelength of 650nm and an ending wavelength of 680nm, the emission peak band with a starting wavelength of 680nm and an ending wavelength of 730nm, the emission peak band with a starting wavelength of 730nm and an ending wavelength of 770nm, and the emission peak band with a starting wavelength of 770nm and an ending wavelength of 810nm, and selects the red light band chips whose four emission peak wavelengths are respectively in the above four emission peak bands. That is to say, the lighting fixture involving the red light band has at least one red light band chip in the above four emission peak bands, so as to meet the corresponding spectral setting based on the reasonable selection of the emission peak of the red light band chip, thereby better restoring the spectrum of sunlight in the red light band. It can be understood that the lighting fixture involving the red light band can also have multiple red light band chips whose emission peak wavelengths are located in the same emission peak band, but each of the above-mentioned emission peak bands has at least one red light band chip whose emission peak wavelength is located therein.

[0042] Furthermore, the present invention selects the red light band chip with the corresponding emission peak wavelength based on the peak of each emission peak band, wherein the emission peak wavelengths of the four red light band chips are respectively selected from 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are sequentially named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4, that is, the red light band with an emission peak wavelength of 666nm±5nm is respectively named The chip is a red light band chip L1, the red light band chip with an emission peak wavelength of 710nm±5nm is a red light band chip L2, the red light band chip with an emission peak wavelength of 753nm±5nm is a red light band chip L3, and the red light band chip with an emission peak wavelength of 786nm±5nm is a red light band chip L4, so that the emission peak of the red light band lighting fixture in the red light band spectrum can be close to the peak of the sunlight spectrum in the red light band, thereby better restoring the spectrum of sunlight in the red light band.

[0043] It is worth mentioning that the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm, so as to ensure the spectral continuity of the lighting fixtures involving the red light band in the red light band, effectively reduce the gaps and peaks in the spectrum, and thus better restore the corresponding sunlight spectrum in the red light band.

[0044] Preferably, the half-wave widths of the red light band chip L2 and the red light band chip L3 are greater than or equal to 45 nm, thereby improving the continuity between the emission peaks formed by the red light band chip L1, the red light band chip L2, the red light band chip L3 and the red light band chip L4, avoiding the emission spectrum of the lighting fixture involving the red light band from having a gap in the red light band, and improving the degree of restoration of the sunlight spectrum in the red light band by the lighting fixture involving the red light band.

[0045] In particular, the present invention also selects a first band chip whose emission peak wavelength is in the visible light band, wherein the emission peak wavelength of the first band chip is in the band range of 420nm to 580nm, so as to meet the coverage of the lighting fixture involving the red light band in the visible light band and ensure the lighting effect of the lighting fixture involving the red light band.

[0046] For details, refer to Figure 3 and Figure 4The luminous spectrum of the red-band lighting fixture corresponding to the first embodiment of the present invention is shown, along with a comparison with the spectrum of sunlight at a color temperature of 5600K. Specifically, the red-band chip L1 selected in the first embodiment of the present invention has a peak emission wavelength of 666nm, the red-band chip L2 has a peak emission wavelength of 710nm, the red-band chip L3 has a peak emission wavelength of 755nm, and the red-band chip L4 has a peak emission wavelength of 783nm.

[0047] Specifically, in the first embodiment of the present invention, the half-wave width of the red light chip L1 is 14 nm, the half-wave width of the red light chip L2 is 49 nm, the half-wave width of the red light chip L3 is 51 nm, and the half-wave width of the red light chip L4 is 19 nm. This improves the continuity between the emission peaks of two adjacent red light chips within the emission peak wavelength band, avoids gaps in the emission spectrum of the red light-related lighting fixture, and improves the degree of reproduction of the sunlight spectrum in the red light band by the red light-related lighting fixture. It is understood that the half-wave width of each red light chip is allowed to have a reasonable fluctuation range of ±5 nm.

[0048] It is worth mentioning that in the first embodiment of the present invention, the emission peak wavelength of the first band chip is selected from one of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm to match the peak distribution of the sunlight spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture involving the red light band.

[0049] Specifically, the lighting fixture involving the red light band includes at least four first-band chips, and the emission peak wavelengths of the four first-band chips are in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm. That is to say, the lighting fixture involving the red light band has four first-band chips with emission peak wavelengths in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so that the luminous spectrum of the lighting fixture involving the red light band can approach the sunlight spectrum, so as to better restore the corresponding sunlight spectrum.

[0050] It is worth mentioning that the half-wave width of at least one of the first-band chips is greater than or equal to 17nm. Based on the wide half-wave setting of at least one of the first-band chips, the continuity of the spectrum is improved and the matching degree between the lighting fixtures in the red light band and the sunlight spectrum is improved.

[0051] In particular, to optimize the matching of the luminous spectrum of the red light-band lighting fixture with the sunlight spectrum, the present invention also performs wavelength conversion matching on the first wavelength chip by using the transparent silica gel or silicone resin and phosphor ratios shown in the following table:

[0052]

[0053] The peak emission wavelengths of the phosphors listed in the table above are allowed to fluctuate within a ±5nm range, and the corresponding phosphor ratios are allowed to fluctuate within a ±15% range based on the values shown in the table above. This is not a limitation of the present invention. Specifically, in this embodiment of the present invention, phosphors with peak emission wavelengths of 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm, and 655nm±5nm are used to simultaneously perform wavelength conversion and matching on the first wavelength band chip. A and B are two-component silicone or silicone resin.

[0054] It is worth mentioning that in the first embodiment of the present invention, the radiation power of the lighting fixture involving the red light band is about 2000mW. After the selection of the above-mentioned red light band chip and the first band chip, after simulation calculation and actual measurement optimization, the partial radiation power of the first band chip accounts for 1600mW to 1800mW, the radiation power of the red light band chip L1 is about 11.5mW, the radiation power of the red light band chip L2 is about 150mW, the radiation power of the red light band chip L3 is about 165mW, the radiation power of the red light band chip L4 is about 55mW, and the total radiation light flux is 2081.5mW.

[0055] refer to Figure 3 and Figure 4 It can be seen that the luminous spectrum of the lighting fixture involving the red light band in this embodiment of the utility model can present the distribution composition law of the corresponding peak of the sunlight spectrum with a color temperature of 5600K, which makes up for the lack of existing lamps in the red light band, so that the luminous spectrum of the lighting fixture involving the red light band can better restore the corresponding sunlight spectrum, reduce the health problems caused by the reduction of outdoor activities of people in modern society and the lack of sunlight exposure, and provide healthy lighting.

[0056] Further, refer to Figure 5 and Figure 6The luminous spectrum of the red-band lighting fixture corresponding to a second embodiment of the present invention is shown, along with a comparison with the spectrum of sunlight at a color temperature of 5600K. Specifically, the red-band chip L1 selected in the second embodiment of the present invention has a peak emission wavelength of 670nm, the red-band chip L2 has a peak emission wavelength of 710nm, the red-band chip L3 has a peak emission wavelength of 755nm, and the red-band chip L4 has a peak emission wavelength of 783nm.

[0057] Specifically in this embodiment, the half-wave width of red light chip L1 is 14nm, the half-wave width of red light chip L2 is 49nm, the half-wave width of red light chip L3 is 71nm, and the half-wave width of red light chip L4 is 19nm. This improves the continuity between the emission peaks of two adjacent red light chips within the emission peak wavelength band, avoids gaps in the emission spectrum of the red light-related lighting fixture, and improves the degree of reproduction of the sunlight spectrum in the red light band by the red light-related lighting fixture. It is understood that the half-wave width of each red light chip is allowed to have a reasonable fluctuation range of ±5nm.

[0058] It is worth mentioning that in the second embodiment of the present invention, the lighting fixture involving the red light band also uses at least four first-band chips with emission peak wavelengths in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm to match the peak distribution of the sunlight spectrum in the visible light band. That is to say, the lighting fixture involving the red light band has four first-band chips with emission peak wavelengths in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so that the luminous spectrum of the lighting fixture involving the red light band can be close to the sunlight spectrum, so as to better restore the corresponding sunlight spectrum.

[0059] In particular, the half-wave width of at least one of the first-band chips is greater than or equal to 17 nm, so as to improve the continuity of the spectrum and enhance the matching degree between the lighting fixtures in the red light band and the sunlight spectrum based on the wide half-wave setting of at least one of the first-band chips.

[0060] Similarly, to optimize the matching of the luminous spectrum of the red light-band lighting fixture with the sunlight spectrum, the present invention also performs wavelength conversion matching on the first band chip by using the transparent silica gel or silicone resin and phosphor ratios shown in the table below:

[0061]

[0062] The peak emission wavelengths of the phosphors listed in the table above are allowed to fluctuate within a ±5nm range, and the corresponding phosphor ratios are allowed to fluctuate within a ±15% range based on the values shown in the table above. This is not a limitation of the present invention. Specifically, in this embodiment of the present invention, phosphors with peak emission wavelengths of 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm, and 655nm±5nm are used to simultaneously perform wavelength conversion and matching on the first wavelength band chip. A and B are two-component silicone or silicone resin.

[0063] It is worth mentioning that in the second embodiment of the present invention, the radiation power of the lighting fixture involving the red light band is about 2000mW. After the selection of the red light band chip and the first band chip in the above second embodiment, after simulation calculation and actual measurement optimization, the partial radiation power of the first band chip accounts for 1600mW to 1800mW, the radiation power of the red light band chip L1 is about 16mW, the radiation power of the red light band chip L2 is about 150mW, the radiation power of the red light band chip L3 is about 220mW, the radiation power of the red light band chip L4 is about 38mW, and the total radiation light flux is 2124mW.

[0064] refer to Figure 5 and Figure 6 It can be seen that the luminous spectrum of the lighting fixture involving the red light band of the second embodiment can present the distribution composition law of the corresponding peak of the sunlight spectrum with a color temperature of 5600K, which makes up for the lack of existing lamps in the red light band, so that the luminous spectrum of the lighting fixture involving the red light band can better restore the corresponding sunlight spectrum, reduce the health problems caused by the reduction of outdoor activities of people in modern society and the lack of sunlight exposure, and provide healthy lighting.

[0065] To further understand the present invention, the present invention also provides a method for emitting light in the red light band, wherein the method for emitting light in the red light band comprises the following steps:

[0066] A. Divide the emission peak wavelengths into four bands: 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm;

[0067] B. Select at least four red light band chips whose emission peak wavelengths are located in the four emission peak bands, and at least two of the four red light band chips located in different emission peak bands have a half-wave width greater than or equal to 30nm.

[0068] It is worth mentioning that the light-emitting method involving the red light band includes step C, selecting at least one first band chip in the band range of 420nm to 580nm with an emission peak wavelength to match the peak distribution of the sunlight spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture involving the red light band.

[0069] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples without contradiction.

[0070] Those skilled in the art will appreciate that the embodiments of the present invention described above and shown in the accompanying drawings are provided for illustrative purposes only and are not intended to limit the present invention. The objectives of the present invention have been fully and effectively achieved. The functional and structural principles of the present invention have been demonstrated and illustrated in the embodiments. Any variations or modifications may be made to the embodiments of the present invention without departing from the principles described.

Claims

1. A lighting fixture involving the red light band, characterized in that: include: The lighting fixture involving the red light band includes at least four red light band chips whose emission peak wavelengths are respectively located in the band range of 650nm-680nm, the band range of 680nm-730nm, the band range of 730nm-770nm and the band range of 770nm-810nm, and the half-wave width of the red light band chips having at least two emission peak wavelengths located in different band ranges is greater than or equal to 30nm.

2. The lighting fixture involving the red light band according to claim 1, wherein the emission peak wavelengths of the four red light band chips are respectively selected from the band ranges of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, and are named red light band chip L1, red light band chip L2, red light band chip L3 and red light band chip L4 in sequence, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 30nm.

3. The red light band lighting fixture according to claim 2, wherein the half-wave width of the red light band chip L2 and the red light band chip L3 is greater than or equal to 45 nm.

4. The lighting fixture involving the red light band according to claim 3, wherein the peak emission wavelength of the red light band chip L1 is 666nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

5. The lighting fixture involving the red light band according to claim 4, wherein the half-wave width of the red light band chip L1 is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 51nm, and the half-wave width of the red light band chip L4 is 19nm.

6. The lighting fixture involving the red light band according to claim 3, wherein the peak emission wavelength of the red light band chip L1 is 670nm, the peak emission wavelength of the red light band chip L2 is 710nm, the peak emission wavelength of the red light band chip L3 is 755nm, and the peak emission wavelength of the red light band chip L4 is 783nm.

7. The lighting fixture involving the red light band according to claim 6, wherein the half-wave width of the red light band chip L1 is 14nm, the half-wave width of the red light band chip L2 is 49nm, the half-wave width of the red light band chip L3 is 71nm, and the half-wave width of the red light band chip L4 is 19nm.

8. The lighting fixture for the infrared light band according to any one of claims 1 to 7, wherein the lighting fixture for the infrared light band comprises at least one first wavelength band chip, wherein the emission peak wavelength of the first wavelength band chip is within the wavelength range of 420nm to 580nm.

9. The red light band lighting fixture according to claim 8, wherein the red light band lighting fixture comprises at least four chips of the first waveband, and the emission peak wavelengths of the four chips of the first waveband are in the waveband range of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

10. The red light band lighting fixture according to claim 9, wherein the red light band lighting fixture uses phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm respectively to perform wavelength conversion matching on the first band chip.

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