Probe device for IC power test
Through the design of the probe device and the deviation correction device, the problem of accurate and stable contact between the probe and the IC electrode in the IC power test is solved, and a fast, stable and low-cost test effect is achieved.
Patent Information
- Application Number
- CN202422075105.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-26
- Publication Date
- 2025-08-19
- Estimated Expiration
- 2034-08-26
AI Technical Summary
In IC power testing, it is difficult to achieve accurate and stable contact between the probe and the IC electrode under test, resulting in low testing efficiency, high cost, and difficult to ensure the test effect.
The design includes a probe device and a bias correction device, which includes a probe holder and a probe. The bias correction device includes a bias correction ridge. The position of the IC lead to be defined and guided by the corrected ridge to ensure stable contact of the probe.
It improves the contact speed and stability of the probe, reduces the testing cost, and improves the testing efficiency and accuracy.
Smart Images
Figure CN223244669U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of power parameter testing, and in particular to a probe device for IC power testing. Background Art
[0002] During integrated circuit electrical testing, especially power parameter testing, multiple test probes are often used. During the test, all probes must be precisely aligned and in stable contact with the electrodes of the IC being tested. To meet these requirements, the positions of the IC electrodes or probes must be frequently adjusted during testing. If the number of IC electrodes being tested is large or there are many detection points, each probe must be calibrated and adjusted one by one. This results in low overall test efficiency, high test costs, and difficulty in ensuring test results.
[0003] How to make the probes contact the IC electrodes accurately and stably during IC power testing has become an urgent problem that needs to be solved. Summary of the Invention
[0004] In view of this, the present application proposes a probe device for IC power testing, which is suitable for making the probe contact the IC electrode accurately and stably during IC power testing.
[0005] According to one aspect of the present application, there is provided a probe device for IC power testing, comprising: two probe devices and a deflection correction device;
[0006] Each probe device includes: a probe rack and two or more probes; the two or more probes are arranged on the probe rack, and the detection ends of the two or more probes face the same direction;
[0007] The deflection correction device includes: a deflection correction frame and two or more deflection correction ridges for fixing the IC leads under test in the IC power test; the two or more deflection correction ridges are arranged in sequence on one side of the deflection correction frame, and a gap is provided between each two adjacent deflection correction ridges so that a probe can penetrate the gap between the two adjacent deflection correction ridges and, after penetrating the gap, electrically connect with the IC lead under test inserted in the gap;
[0008] The two probe devices are respectively located on both sides of the correction device and the detection end of the probe of one probe device is arranged opposite to the detection end of the probe of the other probe device. The probe of one probe device penetrates between any two adjacent correction ridges and contacts one side of the lead of the IC under test, and the probe of the other probe device passes through the correction frame and contacts the other side of the lead of the IC under test.
[0009] In one possible implementation, the main body of the correcting ridge is a strip structure, the main body of the correcting frame is a rectangular structure, and two or more correcting ridges are arranged in sequence along the length direction of the correcting frame, and the length directions of the two or more correcting ridges are parallel to each other.
[0010] In a possible implementation, a flat groove is provided on one side of the deviation-correcting ridge.
[0011] In a possible implementation, the deflection correction frame is provided with two or more through holes, and the two or more through holes are respectively provided between any two adjacent deflection correction ridges, and the probe is adapted to contact the lead of the IC under test through the through holes.
[0012] In a possible implementation, the main body of the probe holder is a plate-shaped structure, and the probes pass through two opposite sides of the probe holder and are fixedly connected to the probe holder.
[0013] In a possible implementation, four correcting ridges are provided.
[0014] In one possible implementation, each probe device is provided with six probes;
[0015] The six probes are arranged in two rows and three columns on the probe rack.
[0016] Beneficial effects: Since the IC lead under test is confined between two adjacent deflection correction ridges, the IC lead under test can be stably placed on the deflection correction frame. When the probes of the two probe devices contact the IC lead under test, it is ensured that the IC lead under test will not deviate significantly. The deflection correction ridges of the deflection correction device can not only limit the position of the IC lead, but also limit and guide the probe when it contacts the IC lead under test, thereby improving the contact speed of the probe.
[0017] Other features and aspects of the present application will become apparent from the following detailed description of exemplary embodiments with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments, features, and aspects of the application and, together with the description, serve to explain the principles of the application.
[0019] Figure 1 A front view of a probe device for IC power testing according to an embodiment of the present application is shown;
[0020] Figure 2 A side view of a probe device for IC power testing according to an embodiment of the present application is shown;
[0021] Figure 3 A cross-sectional top view of a probe device for IC power testing according to an embodiment of the present application is shown;
[0022] Figure 4 The main structure diagram of the correction device of an embodiment of the present application is shown. DETAILED DESCRIPTION
[0023] Various exemplary embodiments, features, and aspects of the present application will be described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise indicated.
[0024] Among them, it needs to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention or simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention.
[0025] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of this utility model, "plurality" means two or more, unless otherwise specifically defined.
[0026] The word “exemplary” is used exclusively herein to mean “serving as an example, example, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments.
[0027] In addition, numerous specific details are provided in the detailed description below to better illustrate the present application. Those skilled in the art will appreciate that the present application can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art are not described in detail in order to highlight the main purpose of the present application.
[0028] Figure 1 A front view of a probe device for IC power testing according to an embodiment of the present application is shown; Figure 2 A side view of a probe device for IC power testing according to an embodiment of the present application is shown; Figure 3 A cross-sectional top view of a probe device for IC power testing according to an embodiment of the present application is shown; Figure 4 The main structure diagram of the correction device of the embodiment of the present application is shown in FIG. Figure 1As shown, the probe device for IC power test is characterized in that it includes: two probe devices and a correction device; each probe device includes: a probe frame 100 and two or more probes 200; the two or more probes 200 are arranged on the probe frame 100, and the detection ends of the two or more probes 200 are oriented in the same direction; the correction device includes: a correction frame 300 and two or more correction ridges 400 for fixing the IC lead 500 under test in the IC power test; the two or more correction ridges 400 are arranged in sequence on one side of the correction frame 300, and there is a spacer between each two adjacent correction ridges 400. The gap is designed so that the probe 200 can penetrate into the gap between two adjacent deflection correction ridges 400 and be electrically connected to the IC lead 500 under test inserted in the gap after penetrating the gap; the two probe devices are respectively located on both sides of the deflection correction device and the detection end of the probe 200 of one probe device is arranged opposite to the detection end of the probe 200 of the other probe device, the probe 200 of one probe device penetrates between any two adjacent deflection correction ridges 400 and contacts one side of the IC lead 500 under test, and the probe 200 of the other probe device passes through the deflection correction frame 300 and contacts the other side of the IC lead 500 under test.
[0029] Here, it should be noted that the parameters measured by the tested IC 510 vary depending on the model, and generally include current, voltage, power, frequency, etc. These parameters are derived through the IC lead 500. The two probe devices of the present application are suitable for performing power testing on the IC lead 500 under test. The probe frame 100 of the probe device is suitable for fixing more than two probes 200 at the same time, ensuring that more than two probes 200 can contact the IC lead 500 under test at the same time. The correction frame 300 of the correction device is suitable for supporting the IC lead 500 under test. Since the IC lead 500 under test is restricted between two adjacent correction ridges 400, the IC lead 500 under test can be stably placed on the correction frame 300. When the probes 200 of the two probe devices contact the IC lead 500 under test, it is ensured that the IC lead 500 under test will not deviate significantly. The correction ridge 400 of the correction device can not only limit the position of the IC lead 500, but also limit and guide the probe 200 when the probe 200 contacts the IC lead 500 under test, thereby improving the contact speed of the probe 200. During testing, the IC lead 500 under test is first placed on the correction frame 300 under the guidance of the correction ridge 400, and the probe 200 of one probe device is lowered, and the probe 200 of the other probe device is raised, so that the probes 200 of the two probe devices effectively contact both sides of the IC lead 500 under test, and the IC lead 500 under test, the probe 200, the probe connection line 210 and the external electrical parameter tester are electrically connected. During the test, the signals applied and obtained by the external electrical parameter tester are transmitted between the probe connection line 210, the probe 200 and the IC lead 500 under test. During the test, if the IC lead 500 under test and the probe 200 are deformed and deviated from the position, they can be restored to the correct shape while being tested under the guidance of the IC lead correction ridge 400 or the correction frame 300, and the test is effectively completed. The purpose is to achieve simple probe positioning, high test efficiency, fast and stable contact of the probe 200 with the IC lead 500 under test, strong versatility and low test cost.
[0030] In one possible implementation, the main body of the deflection correction ridge 400 is a strip-shaped structure, the main body of the deflection correction frame 300 is a rectangular parallelepiped structure, and two or more deflection correction ridges 400 are arranged in sequence along the length direction of the deflection correction frame 300, and the length directions of the two or more deflection correction ridges 400 are parallel to each other. Here, it should be noted that since the probe frame 100 is provided with multiple probes 200, each IC lead 500 under test is provided with multiple detection points, the two or more deflection correction ridges 400 divide the deflection correction frame 300 into multiple spaces for placing the IC leads 500 under test, and the length directions of the deflection correction ridges 400 are parallel to the length directions of the IC leads 500 under test. When the IC leads 500 under test are placed on the deflection correction frame 300, the two deflection correction ridges 400 on both sides can define the IC leads 500 under test.
[0031] In a possible implementation, a flat groove is provided on one side of the deviation-correcting ridge 400. Figure 1 As shown, the two flat grooves of the correcting ridge 400 form a pointed structure on one side of the correcting ridge 400, thereby facilitating the probe 200 to smoothly penetrate between the two correcting ridges 400. The correcting ridge 400 guides the probe 200, preventing the probe 200 from shaking left and right during the contact process, resulting in an inability to accurately contact the detection point.
[0032] In a possible implementation, the deflection correction frame 300 is provided with two or more through holes 310 , which are respectively provided between any two adjacent deflection correction ridges 400 , and the probe 200 is adapted to contact the IC lead 500 under test through the through holes 310 . It should be noted here that the main body of the correction frame 300 is a rectangular structure with more than two through holes 310, and the through holes 310 pass through the opposite sides of the correction frame 300. The number of through holes 310 is the same as the number of probes 200, and the through holes 310 and the probes 200 are arranged in a one-to-one correspondence. When the IC lead 500 to be tested is placed on the correction frame 300, the IC lead 500 to be tested contacts the correction frame 300 to achieve stable placement of the IC lead 500 to be tested, and the detection point of the IC lead 500 to be tested is suspended under the action of the through hole 310, so that the probe 200 can pass through the through hole 310 of the correction frame 300 to contact the detection point of the IC lead 500 to be tested.
[0033] Further, such as Figure 4 As shown, the main body of the through hole 310 is a cylindrical hole structure. The diameter of the through hole 310 needs to be larger than the width of the probe 200, so that the probe 200 can smoothly penetrate into the through hole 310. Similarly, the gap distance between the two correcting ridges 400 is larger than the width of the probe 200, so that the probe 200 can smoothly penetrate into between the two correcting ridges 400.
[0034] In one possible implementation, the main body of the probe rack 100 is a plate-like structure, and the probes 200 pass through opposite sides of the probe rack 100 and are fixedly connected to the probe rack 100. It should be noted that the arrangement of the probe rack 100 facilitates the simultaneous placement of multiple probes 200. By operating the probe rack 100, multiple probes 200 on the probe rack 100 can be simultaneously placed between any two deflection correction ridges 400 or into any through-hole 310. Compared with taking and installing each probe 200 individually, the present application not only facilitates quick and easy installation but also ensures accurate installation.
[0035] In a possible implementation, there are four correcting ridges 400, such as Figure 1As shown, four correcting ridges 400 are arranged on the correcting frame 300 , and three installation spaces for placing the IC leads 500 under test are formed between the four correcting ridges 400 . The three IC leads 500 under test are respectively arranged between the four correcting ridges 400 .
[0036] In a possible implementation, the probe device is provided with six probes 200; the six probes 200 are arranged in two rows and three columns on the probe rack 100. Figure 3 As shown, the two probes 200 in each column probe into the same two correcting ridges 400, and the three columns of probes 200 respectively probe into the three spaces formed between the four correcting ridges 400. Each IC lead 500 under test has two detection points, and the two probes 200 in each column respectively contact the two detection points of each IC lead 500 under test.
[0037] Similarly, the two probe devices have the same structure. The other probe device also has six probes 200, which are arranged in two rows and three columns on the probe frame 100. The deflection correction frame 300 is correspondingly provided with six through holes 310, which are arranged in two rows and three columns on the deflection correction frame 300. The six through holes 310 correspond to the six detection points of the three IC leads 500 under test. The six probes 200 are respectively inserted into the six through holes 310, and each probe 200 contacts each detection point of each IC lead 500 under test. Therefore, the two probe devices are arranged symmetrically, so that the detection points of each IC lead 500 under test are contacted by two probes 200 on both sides.
[0038] The embodiments of the present application have been described above. The above description is illustrative and not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is selected to best explain the principles of the embodiments, their practical applications, or improvements to the technology in the market, or to enable other persons skilled in the art to understand the embodiments disclosed herein.
Claims
1. A probe device for IC power testing, characterized in that: include: Two probe devices and a deviation correction device; Each of the probe devices comprises: a probe rack and two or more probes; the two or more probes are arranged on the probe rack, and the detection ends of the two or more probes face the same direction; The deflection correction device includes: a deflection correction frame and two or more deflection correction ridges for fixing the IC leads under test in the IC power test; the two or more deflection correction ridges are arranged in sequence on one side of the deflection correction frame, and a gap is provided between each two adjacent deflection correction ridges so that the probe can penetrate the gap between the two adjacent deflection correction ridges and, after penetrating the gap, electrically connect with the IC leads under test inserted in the gap; The two probe devices are respectively located on both sides of the deflection correction device and the detection end of the probe of one of the probe devices is arranged opposite to the detection end of the probe of the other probe device. The probe of one of the probe devices penetrates between any two adjacent deflection correction ridges and contacts one side of the lead of the IC under test, and the probe of the other probe device passes through the deflection correction frame and contacts the other side of the lead of the IC under test.
2. The IC power test probe device according to claim 1, wherein: The main body of the correcting ridge is a strip structure, the main body of the correcting frame is a rectangular structure, and two or more correcting ridges are arranged in sequence along the length direction of the correcting frame, and the length directions of the two or more correcting ridges are parallel to each other.
3. The IC power test probe device according to claim 2, wherein: A flat groove is provided on one side of the deviation-correcting ridge.
4. The IC power test probe device according to claim 3, wherein: The deflection correction frame is provided with two or more through holes, and the two or more through holes are respectively provided between any two adjacent deflection correction ridges, and the probe is suitable for contacting the lead of the IC under test through the through holes.
5. The IC power test probe device according to claim 1, wherein: The main body of the probe rack is a plate-shaped structure, and the probes pass through two opposite sides of the probe rack and are fixedly connected to the probe rack.
6. The IC power test probe device according to claim 4, wherein: There are four deviation-correcting ridges.
7. The IC power test probe device according to claim 6, wherein: Each of the probe devices is provided with six probes; The six probes are arranged on the probe rack in the form of two rows and three columns.