High-pressure-resistant pressure film

Abstract

The utility model discloses a high-pressure-resistant pressure film which comprises a bottom film, a first base, a second base and a third base, the first base, the second base and the third base divide the bottom film into an area A, an area B and an area C. The area A, the area B and the area C are sequentially and transversely arranged towards the center of the bottom film. The tops of the first base, the second base and the third base are provided with a first extending edge, a second extending edge and a third extending edge which face the center of the bottom film respectively, and the sides, facing the center of the bottom film, of the first extending edge, the second extending edge and the third extending edge are each provided with a sealing edge. According to the high-pressure-resistant pressure film, the overall structure is changed, the thickness is increased, the tensile strength is improved, the base structure is added, the pressure film is not prone to being torn, the service life of the pressure film is prolonged, the maintenance and replacement cost is reduced, and the enterprise operation benefits are further improved.

Description

Technical Field

[0001] The utility model relates to the technical field of chip processing, in particular to a high-pressure resistant pressure membrane. Background Art

[0002] A wafer is a thin, round, high-purity silicon wafer used to manufacture silicon semiconductor circuits (chips). It's made from silicon through a complex series of processes, including purification, crystal pulling, grinding, polishing, and slicing. A chip is an integrated circuit fabricated on a wafer using a variety of semiconductor manufacturing processes, including photolithography, etching, and ion implantation. The wafer is the carrier and raw material for the chip, while the chip is the finished product with specific functions, obtained after a series of processing steps.

[0003] During the wafer production process, wafers require grinding and polishing. The grinding head is a key component in performing these operations. The grinding head presses the wafer against the grinding or polishing pad through rotation and other motions, driving the wafer's rotation. Simultaneously, the grinding or polishing slurry is used to remove excess material from the wafer surface through mechanical and chemical action, improving the wafer's surface quality and achieving the desired flatness and roughness.

[0004] During the chip grinding process, the lapping head assembly is connected to a gas supply to control the pressure membrane's absorption and unloading of the wafer, causing the wafer to rub against the lapping pad, achieving the desired polishing effect. The performance of the pressure membrane has a critical impact on the entire process. Existing pressure membranes often suffer from problems such as insufficient tensile strength and easy tearing when exposed to high pressure, resulting in frequent replacement, which seriously hinders the quality and efficiency of chip processing. Summary of the Invention

[0005] The purpose of this utility model is to provide a high-pressure resistant pressure membrane, which improves the tensile strength by changing the overall structure and increasing the thickness, and adds a base structure to make it less likely to tear, thereby increasing its service life, reducing maintenance and replacement costs, and further improving the company's operating efficiency.

[0006] To achieve the above-mentioned purpose, the utility model provides a high-pressure resistant pressure membrane, including a bottom membrane, a base one, a base two, and a base three. The base one, the base two, and the base three divide the bottom membrane into area A, area B, and area C. The areas A, B, and C are arranged horizontally toward the center of the bottom membrane in sequence. The tops of the base one, the base two, and the base three are respectively provided with an extended edge one, an extended edge two, and an extended edge three facing the center of the bottom membrane. The extended edge one, the extended edge two, and the extended edge three are all provided with a sealing edge on the side facing the center of the bottom membrane.

[0007] Preferably, the base film is circular, and the base one, base two, and base three are annular and are concentrically arranged with the base film.

[0008] Preferably, the height of base one is higher than that of base two, and the height of base two is consistent with that of base three.

[0009] Preferably, the height of the base 1 is 9 mm, and the thickness thereof is 2 mm. The vertical distances between the extended side 2 and the extended side 3 and the bottom film are both 6 mm, and the thicknesses thereof are both 1 mm.

[0010] Preferably, the base one is located at the outermost edge of the base film and is arranged perpendicular to the base film, the base two is located on the inner side of the base one, and the base three is located on the inner side of the base two.

[0011] Preferably, the second extended side is connected to the second base in an S-shape to form an S-shaped buffer zone, and the connection between the third extended side and the third base is consistent with the connection between the second extended side and the second base.

[0012] Therefore, the utility model adopts the above-mentioned high-pressure resistant pressure membrane, which improves the tensile strength by changing the overall structure and increasing the thickness, and adds a base structure to make it not easy to tear, thereby increasing its service life, reducing maintenance and replacement costs, and further improving the company's operating efficiency.

[0013] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic diagram of the overall structure of a high-pressure resistant pressure membrane of the utility model;

[0015] Figure 2 This is a schematic cross-sectional view of a high-pressure resistant pressure membrane of the utility model;

[0016] Figure 3 This is a schematic diagram of an S-shaped buffer zone in a high-pressure resistant pressure membrane of the utility model;

[0017] Figure 4 is a schematic cross-sectional view of a pressure membrane in the prior art;

[0018] Reference numerals

[0019] 1. Extended edge 1; 2. Sealing edge; 3. Bottom film; 4. Extended edge 2; 5. Extended edge 3; 6. Base 1; 7. Base 2; 8. Base 3; 9. Area C; 10. Buffer zone; 11. Area A; 12. Area B. DETAILED DESCRIPTION

[0020] The technical solution of the present utility model is further described below through the accompanying drawings and embodiments.

[0021] Unless otherwise defined, the technical or scientific terms used in this utility model shall have the usual meanings understood by persons of ordinary skill in the field to which this utility model belongs. The words "first", "second" and similar terms used in this utility model do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0022] Example

[0023] like Figure 1 As shown, a high-pressure resistant pressure membrane includes a bottom membrane 3, a base 1 6, a base 2 7, and a base 3 8. The bottom membrane 3 is circular, and the base 1 6, the base 2 7, and the base 3 8 are annular and are concentrically arranged with the bottom membrane 3. Figure 2 As shown, the height of base one 6 is higher than that of base two 7 , and the height of base two 7 is consistent with that of base three 8 .

[0024] like Figure 3 As shown, base 1 6, base 2 7, and base 3 8 divide the base film 3 into area A 11, area B 12, and area C 9, which are arranged horizontally toward the center of the base film 3. The tops of base 1 6, base 2 7, and base 3 8 are respectively provided with an extension edge 1 1, an extension edge 2 4, and an extension edge 3 5, facing the center of the base film 3. Each of the extension edges 1 1, 2 4, and 3 5 is provided with a sealing edge 2 on the side facing the center of the base film 3. To ensure the overall airtightness of the pressure film, a protruding sealing edge 2 is added at the opening, allowing it to be assembled more closely with the other components of the grinding head to form a sealed structure, further preventing the loss of gas pressure.

[0025] The pressure membrane of the utility model adopts a brand-new structure, which is composed of the traditional three longitudinal zones A, B and C (such as Figure 4 (as shown), optimized to a three-zone transverse arrangement. This structure efficiently and evenly distributes pressure, significantly improving the overall tensile strength of the pressure membrane. Through repeated testing and optimization, the most suitable structural form was identified, ensuring excellent stability under various pressure conditions.

[0026] Base 1 (6) is 9mm high and 2mm thick. Extended sides (4) and (5) are both 6mm vertically spaced from the base membrane, and both are 1mm thick. Through precise calculations and experimental verification, the optimal base height parameters were determined. This height ensures the pressure membrane has sufficient strength to withstand high pressures while not compromising its flexibility and operability during chip processing.

[0027] Base 1 6 is located at the outermost edge of base film 3 and is perpendicular to base film 3. Base 2 7 is located inside base 1 6, and base 3 8 is located inside base 2 7. Extended side 2 4 and base 2 7 are connected in an S-shaped manner, forming an S-shaped buffer zone. The connection between extended side 3 5 and base 3 8 is consistent with the connection between extended side 2 4 and base 2 7. To further enhance the reliability of the pressure membrane, the base has been innovatively designed to include a buffer zone. This "S"-shaped design significantly reduces the risk of the base tearing due to stress concentration caused by the pull of the pressure membrane and the grinding assembly during use. This allows the pressure membrane to operate stably in high-pressure environments and is less susceptible to damage, ensuring the continuity and reliability of chip processing.

[0028] Therefore, the utility model adopts the above-mentioned high-pressure resistant pressure membrane, which improves the tensile strength by changing the overall structure and increasing the thickness, and adds a base structure to make it less likely to tear, thereby increasing its service life, reducing maintenance and replacement costs, and further improving the company's operating efficiency.

[0029] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can still modify or replace the technical solution of the present invention with equivalents, and these modifications or equivalent replacements cannot cause the modified technical solution to deviate from the spirit and scope of the technical solution of the present invention.

Claims

1. A high-pressure resistant pressure membrane, characterized in that: It includes a base film, a base 1, a base 2, and a base 3. The base 1, the base 2, and the base 3 divide the base film into area A, area B, and area C. The areas A, B, and C are arranged horizontally toward the center of the base film. The tops of the base 1, the base 2, and the base 3 are respectively provided with an extended edge 1, an extended edge 2, and an extended edge 3 facing the center of the base film. The extended edge 1, the extended edge 2, and the extended edge 3 are all provided with a sealing edge on the side facing the center of the base film.

2. The high-pressure resistant pressure membrane according to claim 1, characterized in that: The base film is circular, and the base one, base two, and base three are annular and are concentrically arranged with the base film.

3. The high-pressure resistant pressure membrane according to claim 1, characterized in that: The height of the base one is higher than that of the base two, and the height of the base two is consistent with that of the base three.

4. The high-pressure resistant pressure membrane according to claim 1, characterized in that: The height of the base 1 is 9 mm, and its thickness is 2 mm. The vertical distances between the extended side 2 and the extended side 3 and the bottom film are both 6 mm, and their thicknesses are both 1 mm.

5. The high-pressure resistant pressure membrane according to claim 1, characterized in that: The base one is located at the outermost edge of the base film and is arranged perpendicular to the base film, the base two is located on the inner side of the base one, and the base three is located on the inner side of the base two.

6. The high-pressure resistant pressure membrane according to claim 1, characterized in that: The second extended side is connected to the second base in an S-shape to form an S-shaped buffer zone, and the connection between the third extended side and the third base is consistent with the connection between the second extended side and the second base.

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