Flow equalizing device and plasma equipment

Abstract

The utility model relates to the technical field of plasma, in particular to a flow equalizing device and plasma equipment, the flow equalizing device comprises a cylinder body, the cylinder body is provided with a partition plate, the partition plate is provided with a flow guide hole, and the flow guide hole extends along a spiral line track and penetrates through the partition plate. The utility model provides a flow equalizing device capable of uniformly mixing plasmas, and the plasma equipment adopts the flow equalizing device.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma, and in particular to a current balancing device and plasma equipment. Background Art

[0002] Plasma equipment primarily consists of a discharge chamber, a working chamber, a vacuum system, a high-frequency power supply, and an automatic control system. Within the vacuum chamber, a radio frequency electric field causes the reactant gas to discharge, forming a plasma. Plasma equipment is primarily used for surface modification of various materials, such as surface cleaning, surface activation, surface etching, surface grafting, surface deposition, surface polymerization, and plasma-assisted chemical vapor deposition.

[0003] A flow balancing device is a device that can evenly mix fluids (such as gas, liquid, gas-liquid mixture, plasma, etc.).

[0004] The uniformity of plasma directly affects the uniformity of material surface modification. Existing current balancing devices struggle to ensure plasma uniformity, limiting their application scenarios. Utility Model Content

[0005] The purpose of the present invention is to overcome the deficiencies of the prior art and provide a flow balancing device capable of mixing plasma uniformly.

[0006] Another object of the present invention is to provide a plasma device that adopts the above-mentioned current balancing device.

[0007] The purpose of this utility model is achieved through the following technical solutions:

[0008] A flow balancing device comprises a cylinder, wherein the cylinder is provided with a partition, and the partition is provided with a flow guide hole, wherein the flow guide hole extends along a spiral trajectory and passes through the partition.

[0009] Furthermore, an annular groove is provided on the inner wall of the cylinder, and the guide holes are evenly arranged near the inner wall of the annular groove.

[0010] Furthermore, the annular groove is provided with a first rounded corner.

[0011] Furthermore, the partition is provided with a circular boss, and the circular boss is circumscribed with the guide hole.

[0012] Furthermore, the end of the cylinder is provided with a chamfer.

[0013] Furthermore, the inner wall of the current balancing device is provided with a hard anodic oxide film or a natural conductive oxide film.

[0014] A plasma device comprises the current balancing device.

[0015] Furthermore, it also includes a reaction chamber, which is connected to the flow equalizing device. The bottom of the reaction chamber is provided with a gas extraction port, and the gas extraction port is provided close to the inner wall of the reaction chamber.

[0016] Furthermore, it also includes a discharge chamber, which is connected to the current balancing device, and the volume of the reaction chamber is 1 to 6 times the volume of the discharge chamber.

[0017] Furthermore, the inner wall of the reaction chamber is provided with a hard anodic oxide film or a natural conductive oxide film.

[0018] The utility model has the following advantages:

[0019] A partition is provided in the cylinder of the current balancing device, and a guide hole is provided on the partition. The guide hole extends from the upper surface of the partition along a spiral trajectory and penetrates the lower surface of the partition. When the plasma passes through the lower surface of the partition, the spiral line can make the plasma continue to move forward along the tangential direction of the spiral line, thereby "swinging" the plasma into the reaction chamber to achieve the purpose of dispersed injection of plasma, avoiding excessive local plasma concentration in the reaction chamber. At the same time, this injection method of "swinging" the plasma into the reaction chamber is also conducive to "stirring" and mixing the plasma evenly in the reaction chamber, so as to obtain plasma of uniform concentration. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and should not be considered as limiting the scope. For those skilled in the art, other relevant drawings can be obtained based on these drawings without inventive effort.

[0021] Figure 1 It is a cross-sectional schematic diagram of the current balancing device of the present invention;

[0022] Figure 2 It is a cross-sectional schematic diagram of the plasma equipment of the present utility model;

[0023] In the figure: 1-current balancing device; 11-partition; 12-flow guide hole; 13-annular groove; 14-boss, 15-chamfer; 2-reaction chamber; 21-exhaust port; 3-discharge chamber; 4-workpiece to be processed. DETAILED DESCRIPTION

[0024] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0025] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0026] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0027] In the present invention, unless otherwise expressly specified or limited, a first feature being above or below a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being above, above, and above the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being below, below, and below the second feature includes the first feature being directly below and obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0028] like Figure 1As shown, a flow equalizing device 1 includes a cylinder, a partition 11 is provided at the lower end of the cylinder, and a plurality of guide holes 12 are provided on the partition 11, and the guide holes 12 extend from the upper surface of the partition 11 along a spiral trajectory and penetrate to the lower surface of the partition 11, that is, the guide holes 12 do not extend vertically downward in a straight line along the thickness direction of the partition 11, but their extension path is consistent with the section of the spiral trajectory; when the plasma passes through the lower surface of the partition 11, the spiral line can make the plasma continue to move forward along the tangential direction of the spiral line, thereby "swinging" the plasma into the reaction chamber 2, so as to achieve the purpose of dispersed injection of plasma and avoid excessive local plasma concentration in the reaction chamber 2. At the same time, this injection method of "swinging" the plasma into the reaction chamber 2 is also conducive to "stirring" and mixing the plasma evenly in the reaction chamber 2, so as to obtain plasma of uniform concentration, so as to improve the uniformity of the surface modification treatment of the material.

[0029] Furthermore, before the plasma is injected into the reaction chamber 2, the plasma is pre-mixed to further improve its uniformity. The inner wall of the cylinder is provided with an annular groove 13, and the guide holes 12 are evenly arranged near the inner wall of the annular groove 13. The apertures of the multiple guide holes 12 are the same. The above arrangement further reduces the local concentration difference of the plasma. In addition, the annular groove 13 forms a larger cavity in the cylinder. The plasma passes through the barrier of the partition 11 and the inner wall of the annular groove 13 and forms a vortex in the cavity, thereby achieving the purpose of pre-"stirring" the mixed plasma and making its concentration more uniform.

[0030] Furthermore, a first rounded corner is provided between the inner wall of the annular groove 13 and the top surface of the annular groove 13; the first rounded corner smoothly connects the inner wall of the annular groove 13 and the top surface of the annular groove 13, which can effectively prevent the plasma from spinning in place in the cavity to form "stagnant water" and is more conducive to "stirring" and mixing the plasma evenly.

[0031] Furthermore, a circular boss 14 is centrally provided on the lower surface of the partition 11, and a second rounded corner is provided on the end face of the circular boss 14. The second rounded corner can prevent the occurrence of the "sparking" phenomenon and can also make the plasma uniformly injected into the reaction chamber 2 along the tangent direction of the second rounded corner; the circular boss 14 is tangent to the outlet of the guide hole 12, which can prevent plasma accumulation and avoid local excessive plasma concentration. If the outer diameter of the circular boss 14 is too small, a first step will be formed between the circular boss 14 and the guide hole 12, and the plasma will spin in place at the first step to form "dead water", which is not conducive to "stirring" the mixed plasma. If the outer diameter of the circular boss 14 is too large, a second step will be formed in the guide hole 12, and the plasma will be blocked by the second step to form "backflow", which is not conducive to the injection of plasma into the reaction chamber 2.

[0032] Furthermore, the upper end of the cylinder is provided with a chamfer 15, and the plasma is blocked by the chamfer 15 to form a vortex in the cylinder, which can achieve the purpose of pre-"stirring" the mixed plasma and make its concentration more uniform.

[0033] Furthermore, the inner wall of the current balancing device 1 is provided with a hard anodized film or a natural conductive oxide film; the material of the current balancing device 1 is generally metal, and the plasma will be reduced when it comes into contact with the metal to produce harmful impurities, which is not conducive to the surface modification of the material. Providing a hard anodized film or a natural conductive oxide film on the inner wall of the current balancing device 1 can effectively prevent the plasma from directly contacting the metal inner wall of the current balancing device 1.

[0034] like Figure 2 As shown, a plasma device includes the current balancing device 1.

[0035] Furthermore, it also includes a reaction chamber 2, which is connected to the flow equalizing device 1, and the plasma can enter the reaction chamber 2 through the guide hole 12; in order to be able to remove exhaust gas and not cause the local concentration of plasma in the reaction chamber 2 to be too high or too low, the bottom of the reaction chamber 2 is provided with multiple exhaust ports 21, and the exhaust ports 21 are evenly arranged close to the inner wall of the reaction chamber 2, and the cross-sectional dimensions of the multiple exhaust ports 21 are the same.

[0036] Furthermore, it includes a discharge chamber 3, which is connected to the current balancing device 1. The plasma generated by the discharge chamber 3 can enter the reaction chamber 2 through the guide hole 12. If the volume of the discharge chamber 3 is too small, it is not conducive to placing the workpiece 4 to be processed. If it is too large, the concentration of the plasma will drop suddenly from the discharge chamber 3 to the reaction chamber 2, which is not conducive to the surface modification of the material. After a large number of experiments by the inventors, it is found that it is best to select the volume of the reaction chamber 2 to be 1 to 6 times the volume of the discharge chamber 3.

[0037] Furthermore, the inner wall of the reaction chamber 2 is provided with a hard anodized film or a natural conductive oxide film; the material of the reaction chamber 2 is generally metal, and the plasma will be reduced when it comes into contact with the metal, thereby generating harmful impurities, which is not conducive to the surface modification of the material. Providing a hard anodized film or a natural conductive oxide film on the inner wall of the reaction chamber 2 can effectively prevent the plasma from directly contacting the metal inner wall of the reaction chamber 2.

[0038] It should be noted that the flow equalizing device of the present invention is not only suitable for uniform mixing of plasma, but also for uniform mixing of gas or liquid, and for uniform mixing of both gas and liquid; and the reaction chamber of the present invention can not only be directly used for performance testing of plasma equipment, but also can be directly used for surface modification of materials.

[0039] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A flow balancing device (1), comprising a cylinder, characterized in that: The cylinder is provided with a partition (11), and the partition (11) is provided with a flow guide hole (12), and the flow guide hole (12) extends along a spiral trajectory and passes through the partition (11).

2. The current balancing device (1) according to claim 1, characterized in that: An annular groove (13) is provided on the inner wall of the cylinder, and the guide holes (12) are evenly arranged near the inner wall of the annular groove (13).

3. The current balancing device (1) according to claim 2, characterized in that: The annular groove (13) is provided with a first rounded corner.

4. The current balancing device (1) according to claim 3, characterized in that: The partition (11) is provided with a circular boss (14), and the circular boss (14) is circumscribed with the guide hole (12).

5. The current balancing device (1) according to claim 4, characterized in that: The end of the cylinder is provided with a chamfer (15).

6. The current balancing device (1) according to any one of claims 1 to 5, characterized in that: The inner wall of the current balancing device (1) is provided with a hard anodic oxide film or a natural conductive oxide film.

7. A plasma device, characterized in that: The device comprises the current balancing device (1) according to any one of claims 1 to 6.

8. The plasma equipment according to claim 7, characterized in that: It also includes a reaction chamber (2), the reaction chamber (2) being connected to the flow equalizing device (1), and a gas extraction port (21) being provided at the bottom of the reaction chamber (2), the gas extraction port (21) being provided close to the inner wall of the reaction chamber (2).

9. The plasma equipment according to claim 8, characterized in that: It also includes a discharge chamber (3), the discharge chamber (3) is connected to the current balancing device (1), and the volume of the reaction chamber (2) is 1 to 6 times the volume of the discharge chamber (3).

10. The plasma equipment according to any one of claims 8 or 9, characterized in that: The inner wall of the reaction chamber (2) is provided with a hard anodic oxide film or a natural conductive oxide film.

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