Laser scribing device

Abstract

The utility model discloses a laser scribing device, and belongs to the technical field of photovoltaics. The laser scribing device comprises a laser, a first optical splitter, a protection line optical path, a scribing line optical path and a focuser. The laser is configured to emit a Gaussian beam; the first optical splitter is configured to split the Gaussian beam into a first beam and a second beam; the protection line light path is configured to divide the first light beam into two sub light beams; the scribing line light path is configured to be a light path where the second light beam is transmitted to the focalizer. The focuser is configured to correspondingly focus the two sub-beams into two first focuses and focus the second beam into a second focus, the diameters of the two first focuses are the same, the diameter of the second focus is larger than the diameter of the first focuses, and the distance between the two first focuses is larger than or equal to the diameter of the second focus. The scribing line with extremely small edge breakage and depth and width meeting requirements can be scribed, and the scribing effect is improved.

Description

Technical Field

[0001] The present application belongs to the field of photovoltaic technology, and in particular relates to a laser scribing device. Background Art

[0002] At present, the optical path structure in the laser scribing device is a single optical path focusing structure with a single Gaussian spot as the focus. The energy center of the Gaussian spot is high and the energy outside is low. During laser scribing, due to the large difference between the energy density of the outer and central areas of the Gaussian spot, the scribing effect is not uniform in the width direction of the scribed line. When the energy in the middle area of ​​the Gaussian spot is appropriate and the scribing depth meets the requirements, the energy at the edge of the Gaussian spot is weaker, and the edges on both sides of the scribed line are larger. If the process is debugged to optimize the edge collapse effect, the center energy will be too strong and damage other film layers. This situation is particularly obvious in the preparation of perovskite thin-film batteries, especially in P3 laser scribing performed after depositing the back electrode of the battery. Utility Model Content

[0003] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a laser scribing device that can scribing lines with minimal chipping and satisfying required depth and width, thereby improving the scribing effect.

[0004] In a first aspect, the present application provides a laser scribing device, comprising a laser, a first beam splitter, a protection line optical path, a scribing line optical path, and a focuser;

[0005] The laser is configured to emit a Gaussian beam;

[0006] The first beam splitter is configured to split the Gaussian beam into a first beam and a second beam;

[0007] The protection line optical path is configured to split the first light beam into two sub-beams;

[0008] The scribed line optical path is configured as an optical path for the second light beam to propagate to the focuser;

[0009] The focuser is configured to focus the two sub-beams into two first focal points respectively, and to focus the second beam into a second focus, the diameters of the two first focal points are the same, the diameter of the second focus is larger than the diameter of the first focus, and the distance between the two first focal points is greater than or equal to the diameter of the second focus.

[0010] According to the laser scribing device of the present application, a protection line optical path and a scribing line optical path are set, so that after the first beam splits the Gaussian beam emitted by the laser into a first beam and a second beam, the protection line optical path splits the first beam into two sub-beams, and the focuser focuses the two sub-beams into two small focal points with the same diameter, and the distance between the two small focal points meets the scribing line width requirement, so as to form two consistent protection lines by scribing. The scribing line optical path transmits the second beam to the focuser, and the focuser focuses the second beam into a large focal point with a diameter meeting the scribing line width requirement, and the scribing is centered with the two protection lines as the reference, so as to form a scribing line with extremely small edge chipping and depth and width that meet the requirements, and reduce the risk of damage to other film layers, thereby improving the scribing effect without increasing the core device laser.

[0011] According to one embodiment of the present application, the two first focal points and the second focal point are located in the same processing plane.

[0012] According to one embodiment of the present application, the protection line optical path includes a first beam expander and a second beam splitter sequentially distributed along the propagation direction of the first light beam;

[0013] The first beam expander is configured to expand the first light beam;

[0014] The second beam splitter is configured to split the expanded first beam into the two sub-beams.

[0015] According to one embodiment of the present application, the second beam splitter includes a first half-wave plate and a polarization beam splitter plate sequentially distributed along the propagation direction of the first light beam;

[0016] The first half-wave plate is configured to adjust the polarization state of the first light beam after beam expansion;

[0017] The polarization beam splitter is configured to split the adjusted first light beam into the two sub-beams.

[0018] According to one embodiment of the present application, the protection line optical path further includes a first reflector, the first beam expander, the first reflector, and the second beam splitter are sequentially located between a light exit side of the first light beam of the first beam splitter and a light entrance side of the focuser, and the first reflector is configured to adjust a propagation path of the first light beam;

[0019] The scribed line optical path includes a second reflector, which is located between the light exit side of the second light beam of the first beam splitter and the light entrance side of the focuser, and is configured to adjust a propagation path of the second light beam.

[0020] According to one embodiment of the present application, the laser scribing device further includes a second beam expander;

[0021] The second beam expander is located between the light output side of the laser and the light input side of the first beam splitter, and is configured to collimate and expand the Gaussian beam.

[0022] According to one embodiment of the present application, the first beam splitter includes a second half-wave plate and a polarization beam splitter prism sequentially distributed along the propagation direction of the Gaussian beam;

[0023] The second half-wave plate is configured to adjust the polarization state of the collimated and expanded Gaussian beam;

[0024] The polarization beam splitter is configured to split the adjusted Gaussian beam into the first beam and the second beam.

[0025] According to one embodiment of the present application, the focuser includes a first focusing mirror and a second focusing mirror;

[0026] The first focusing mirror is configured to focus the two sub-beams into the two first focal points respectively;

[0027] The second focusing mirror is configured to focus the second light beam to the second focus.

[0028] According to one embodiment of the present application, the protection line optical path includes a first optical gate, which is located on the light entrance side or the light exit side of the protection line optical path, and the scribed line optical path includes a second optical gate, which is located on the light entrance side or the light exit side of the scribed line optical path;

[0029] The first optical shutter is configured to control the on and off of the protection line optical path;

[0030] The second optical shutter is configured to control the on and off of the scribe line optical path.

[0031] According to one embodiment of the present application, the first beam expander includes a 2-10x beam expander; and / or, the laser includes a picosecond laser with a wavelength of 532 nm.

[0032] The above one or more technical solutions in the embodiments of the present application have at least one of the following technical effects:

[0033] By setting the protection line optical path and the scoring line optical path, after the first beam splitter divides the Gaussian beam emitted by the laser into the first beam and the second beam, the protection line optical path divides the first beam into two sub-beams, the focuser focuses the two sub-beams into two small focal points with the same diameter, and the distance between the two small focal points meets the scoring line width requirement, so as to form two consistent protection lines by scoring. The scoring line optical path transmits the second beam to the focuser, and the focuser focuses the second beam into a large focal point with a diameter meeting the scoring line width requirement. The scoring is centered with the two protection lines as the reference, forming a scoring line with extremely small edge chipping and depth and width that meet the requirements, and reducing the risk of damage to other film layers. The scoring effect is improved without increasing the core device laser.

[0034] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become obvious from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0036] Figure 1 Schematic diagram of the structure of the laser scribing device provided in an embodiment of the present application.

[0037] Reference numerals:

[0038] Laser 1, first beam splitter 2, protection line optical path 3, scribed line optical path 4, focuser 5, first beam expander 31, second beam splitter 32, first half-wave plate 321, polarization beam splitter plate 322, first reflector 33, second reflector 41, second beam expander 6, second half-wave plate 21, polarization beam splitter prism 22, first focusing mirror 51, second focusing mirror 52, first optical gate 34, second optical gate 42, Gaussian beam A, first beam A1, second beam A2, sub-beam A11, first focus B1, second focus B2. DETAILED DESCRIPTION

[0039] The following describes in detail embodiments of the present application. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0040] The laser scribing device provided in the embodiments of the present application is described below with reference to the accompanying drawings.

[0041] Figure 1 This is a schematic structural diagram of the laser scribing device provided in an embodiment of the present application.

[0042] like Figure 1 As shown, the laser scribing device provided in an embodiment of the present application includes a laser 1, a first beam splitter 2, a protection line optical path 3, a scribing line optical path 4 and a focuser 5.

[0043] Laser 1 is configured to emit a Gaussian beam A. A Gaussian beam is a laser beam whose transverse electric field distribution approximately follows a Gaussian function. A Gaussian beam maintains its Gaussian shape when propagating in free space or an optical system. The intensity of a Gaussian beam is highest at its center and gradually decreases with distance from the center, reaching its lowest intensity at the edges.

[0044] First beam splitter 2 is configured to split Gaussian beam A into first beam A1 and second beam A2. Gaussian beam A emitted by laser 1 propagates to first beam splitter 2, which splits Gaussian beam A into two beams: first beam A1 and second beam A2. The intensity distributions of first beam A1 and second beam A2 remain Gaussian, meaning they are still Gaussian beams.

[0045] The first beam splitter 2 has two light-emitting sides, namely a light-emitting side for outputting the first light beam A1 (ie, the light-emitting side of the first light beam A1 ) and a light-emitting side for outputting the second light beam A2 (ie, the light-emitting side of the second light beam A2 ).

[0046] The protection line optical path 3 is configured to split the first light beam A1 into two sub-beams A11. The first light beam A1 output by the first beam splitter 2 propagates to the protection line optical path 3, which splits the first light beam A1 into two sub-beams A11. The two sub-beams A11 have the same energy and propagate to the focuser 5.

[0047] The focuser 5 is configured to focus the two sub-beams A11 into two first focal points B1 respectively. The diameters of the two first focal points B1 are the same.

[0048] The two first focal points B1 are small light spots with sufficiently small diameters. The spacing between the two first focal points B1 meets the scribe line width requirements, that is, the spacing between the two first focal points B1 is greater than or equal to the required scribe line width. The film to be scribed is processed through the two first focal points B1 to form two consistent guard lines on the film to be scribed. The two guard lines have minimal edge chipping, and the spacing between the two guard lines meets the scribe line width requirements, indicating that the guard lines are located outside the scribe line.

[0049] The ruled line optical path 4 is configured as an optical path for the second light beam A2 to propagate to the focuser 5. The second light beam A2 output by the first beam splitter 2 propagates to the ruled line optical path 4, which can propagate the second light beam A2 to the focuser 5.

[0050] The focuser 5 is further configured to focus the second light beam A2 into a second focus B2 , the diameter of the second focus B2 is larger than the diameter of the first focus B1 , and the distance between the two first focuses B1 is larger than or equal to the diameter of the second focus B2 .

[0051] The second focus B2 is a large spot of conventional size, and the diameter of the second focus B2 meets the width requirement of the scribed line, that is, the diameter of the second focus B2 is the required width of the scribed line. In some embodiments, the required width of the scribed line is wider (greater than the diameter of the second focus B2), and multiple second focuses B2 can be focused to use multiple laser beams for scoring to meet the scribed line width requirement, or a single laser beam can be used to achieve the scoring requirement through multiple scoring. The film layer to be scribed is processed through the second focus B2 to scribe the film layer between the two protective layers, forming a scribed line with minimal edge chipping and a depth and width that meet the requirements, ensuring the isolation ability of the scribed line and reducing the risk of damage to other film layers.

[0052] In the related art, a single-path focusing system is composed of a laser, a reflector and a focusing mirror to process the film layer to be scribed, resulting in large edge collapse on both sides of the scribed line. For example, in the preparation process of perovskite thin-film batteries, after the back electrode film layer is formed, the back electrode film layer (film layer to be scribed) is laser scribed (which can be called P3 scribe) to divide the back electrode film layer into multiple spaced back electrodes. The width of the P3 scribe is required to be 100μm. The Gaussian beam generated by the laser is transmitted to the focusing mirror through the reflector. The focusing mirror focuses the Gaussian beam into a focus with a diameter of 100μm, which directly acts on the back electrode film layer. Due to the large difference between the outer energy density and the central energy density of the Gaussian beam, the scribing effect is not uniform on the scale of 100 microns. It is often the case that the energy in the middle area of ​​the spot is appropriate, the scratching depth is appropriate, but the edge energy is weak, and the edges on both sides of the scribe line are large. When the process is debugged to optimize the edge collapse effect, the central energy is often too strong to damage the FTO substrate, and the debugging results often lose sight of one thing while focusing on another.

[0053] In this embodiment, the Gaussian beam emitted by the laser 1 is split into two beams. The first beam A1 propagates to the protection line optical path 3, which splits the first beam A1 into two sub-beams A11. The two sub-beams A11 are then propagated to the focuser 5. The focuser 5 focuses the two sub-beams A11 into two small focal spots of equal diameter, with the spacing between the two small focal spots meeting the width requirements of the scribe line (e.g., P3 scribe line) (e.g., 100μm), thereby forming two consistent protection lines. Because the two small focal spots are extremely small and there are essentially no requirements for the depth and width of the scribe (as long as no damage is done to other film layers), process debugging can easily achieve a scribe effect with minimal edge chipping. The second beam A2 propagates to the scribe line optical path 4, which transmits the second beam A2 to the focuser 5. The focuser 5 focuses the second beam A2 into a large focal point with a diameter that meets the scribe line width requirements (e.g., 100 μm). The scribe line is centered with the two protection lines as the reference, forming a scribe line with minimal edge chipping and meeting the required depth and width. The risk of damage to other film layers (such as the FTO substrate) is also reduced. This improves the scribe effect without increasing the number of core device lasers.

[0054] In some embodiments, by selecting optical path elements and regulating the laser, the two first focal points B1 and the second focal point B2 are located in the same processing plane, so that a scoring line with minimal edge chipping and depth and width that meet the requirements is formed through the two first focal points B1 and the second focal point B2. The scoring process of the sample located on the processing plane can be completed without additional adjustment.

[0055] In some embodiments, the laser 1 includes a picosecond laser with a wavelength of 532 nm. A picosecond laser is a laser with a pulse width in the order of picoseconds, characterized by ultrashort pulse width, high repetition rate, and excellent beam quality. Using a picosecond laser with a wavelength of 532 nm to laser-scribe the back electrode and other film layers in perovskite thin-film cells can meet micro-nano-level processing requirements, ensuring fine scribing. The interaction time between the laser and the back electrode film layer is extremely short, avoiding thermal damage. The high repetition rate significantly increases processing speed, making it more suitable for the processing requirements of perovskite cells.

[0056] In some embodiments, the protection line optical path 3 includes a first beam expander 31 and a second beam splitter 32 sequentially distributed along the propagation direction of the first light beam A1.

[0057] The first beam expander 31 is configured to expand the first light beam A1. A beam expander is a lens assembly that can change the diameter and divergence angle of a laser beam. The first beam expander 31 can change the size of the first focal point B1 by adjusting the beam expansion magnification. The magnification of the first beam expander 31 is negatively correlated with the diameter of the first focal point B1. The first beam expander 31 includes a 2-10x beam expander, meaning that the first beam expander 31 has a control range of 2-10x. The specific magnification of the first beam expander 31 is determined by the process.

[0058] The second beam splitter 32 is configured to split the expanded first beam A1 into two sub-beams A11 .

[0059] In some embodiments, the second beam splitter 32 includes a first half-wave plate 321 and a polarization beam splitter plate 322 sequentially distributed along the propagation direction of the first light beam A1 .

[0060] The first half-wave plate 321 is configured to adjust the polarization state of the first light beam A1 after expansion. A half-wave plate (i.e., a half-wave plate) is a birefringent crystal of a specific thickness that is primarily used to adjust the direction of polarized light. The first half-wave plate 321 adjusts the polarization direction of the first light beam A1 after expansion. The energy distribution between the two first focal points B1 can be adjusted by the first half-wave plate 321. The attenuation of the first half-wave plate 321 is generally small, for example, less than 0.1%.

[0061] The polarization beam splitter plate 322 is configured to split the adjusted first light beam A1 into the two sub-beams A11. The polarization beam splitter plate is an optical element that can decompose incident light into two linearly polarized light components. The polarization beam splitter plate 322 splits the first light beam A1 into two sub-beams A11 with different polarization states and roughly parallel propagation directions. When the distance between the polarization beam splitter plate 322 and the focuser 5 is close, the two sub-beams A11 split by the polarization beam splitter plate 322 can be regarded as two parallel sub-beams. The horizontal projection of the two first focal points B1 in the ruling direction is fine-tuned by rotating the angle of the polarization beam splitter plate. The total attenuation of the polarization beam splitter plate 322 is generally relatively small, for example, less than 5%.

[0062] The two sub-beams A11 have the same energy. The two sub-beams A11 are focused by the focuser 5 into two sufficiently small, equal light spots, namely, two first focal points B1. The diameter of the first focal points B1 can be the required width of the scribed line (e.g., 100 μm) divided by the magnification of the first beam expander 31. For example, the diameter of the first focal points B1 is 10-50 μm.

[0063] In some embodiments, the protection line optical path 3 further includes a first reflector 33, a first beam expander 31, a first reflector 33, and a second beam splitter 32, which are sequentially positioned between the light exit side of the first light beam A1 of the first beam splitter 2 and the light entrance side of the focuser 5, thereby simplifying the protection line optical path 3. For example, the first beam expander 31 is positioned on the light exit side of the first light beam A1 of the first beam splitter 2, the first reflector 33 is positioned between the light exit side of the first beam expander 31 and the light entrance side of the second beam splitter 32, and the focuser 5 is positioned on the light exit side of the second beam splitter 32. If the second beam splitter 32 includes a first half-wave plate 321 and a polarization beam splitter plate 322, which are sequentially positioned along the propagation direction of the first light beam A1, the first reflector 33 is positioned between the light exit side of the first beam expander 31 and the light entrance side of the first half-wave plate 321, and the focuser 5 is positioned on the light exit side of the polarization beam splitter plate 322.

[0064] The first reflector 33 is configured to adjust the propagation path of the first light beam A1. The first light beam A1 output by the first beam splitter 2 propagates to the first reflector 33 after passing through the first beam expander 31. The first reflector 33 then reflects the light to the first half-wave plate 321. The attenuation of the first reflector 33 is generally small, for example, less than 0.1%.

[0065] It should be noted that the position and number of the first reflectors 33 can be set according to the position of the first beam splitter 2, the position of each component in the protection line optical path 3 and / or the position of the focuser 5, to ensure that the first light beam A1 output by the first beam splitter 2 is transmitted to the focuser 5 in sequence through the first beam expander 31, the first half-wave plate 321 and the polarization beam splitter 322, and no specific limitation is given here.

[0066] In some embodiments, the scribed line optical path 4 includes a second reflector 41, located between the light exit side of the second light beam A2 from the first beam splitter 2 and the light entrance side of the focuser 5. The second reflector 41 is configured to adjust the propagation path of the second light beam A2. The second light beam A2 output from the first beam splitter 2 propagates to the second reflector 41 and is reflected by the second reflector 41 toward the focuser 5. The attenuation of the second reflector 41 is typically relatively low, for example, less than 0.1%.

[0067] It should be noted that the position and number of the second reflectors 41 can be set according to the position of the first beam splitter 2 and the position of the focuser 5 to ensure that the second light beam A2 output by the first beam splitter 2 is transmitted to the focuser 5, and no specific limitation is given here.

[0068] In some embodiments, the laser engraving device also includes a second beam expander 6, which is located between the light output side of the laser 1 and the light input side of the first beam splitter 2, that is, the second beam expander 6 is located on the light output side of the laser 1, and the first beam splitter 2 is located on the light output side of the second beam expander 6.

[0069] The second beam expander 6 is configured to collimate and expand the Gaussian beam A. The Gaussian beam A emitted by the laser 1 propagates to the second beam expander 6 , which collimates and expands the Gaussian beam A. The collimated and expanded Gaussian beam A then propagates to the first beam splitter 2 .

[0070] The second beam expander 6 can change the size of the second focal point B2 by adjusting the beam expansion magnification. The magnification of the second beam expander 6 is 2-10 times, and the specific magnification of the second beam expander 6 is determined by the width of the scribed line.

[0071] In some embodiments, the first beam splitter 2 includes a second half-wave plate 21 and a polarization beam splitter prism 22, which are sequentially distributed along the propagation direction of the Gaussian beam A. The second half-wave plate 21 can be located on the light-exiting side of the second beam expander 6, and the polarization beam splitter prism 22 can be located on the light-exiting side of the second half-wave plate 21. The polarization beam splitter prism 22 has two light-exiting sides, namely, the light-exiting side of the first light beam A1 and the light-exiting side of the second light beam A2. The protection line optical path 3 is located on the light-exiting side of the first light beam A1 of the polarization beam splitter prism 22, and the ruled line optical path 4 is located on the light-exiting side of the second light beam A2 of the polarization beam splitter prism 22.

[0072] The second half-wave plate 21 is configured to adjust the polarization state of the collimated and expanded Gaussian beam A. The attenuation of the second half-wave plate 21 is generally small, for example, less than 0.1%.

[0073] The polarization beam splitter prism 22 is configured to split the adjusted Gaussian beam A into a first beam A1 and a second beam A2. The polarization beam splitter prism 22 splits the adjusted Gaussian beam A into horizontally polarized light (P-polarized light) and vertically polarized light (S-polarized light). The first beam A1 can be P-polarized light, and the second beam A2 can be S-polarized light. The total attenuation of the polarization beam splitter prism 22 is generally relatively small, for example, less than 5%.

[0074] In some embodiments, the focuser 5 includes a first focusing lens 51 and a second focusing lens 52. The first focusing lens 51 can be located on the light exit side of the protection line optical path 3, that is, the first focusing lens 51 can be located on the light exit side of the polarization beam splitter prism 22. The second focusing lens 52 can be located on the light exit side of the ruled line optical path 4.

[0075] The first focusing mirror 51 is configured to focus the two sub-beams A11 into two first focal points B1 respectively. The focusing magnification of the first focusing mirror 51 can be 20 times.

[0076] The second focusing mirror 52 is configured to focus the second light beam A2 into a second focus B2. The focusing magnification of the second focusing mirror 52 may be 20 times.

[0077] During laser scribing, the protection line optical path 3 and the scribing line optical path 4 can be activated simultaneously. The first focusing mirror 51 and the second focusing mirror 52 can operate simultaneously. That is, the first focusing mirror 51 focuses the two sub-beams A11 into two first focal points B1, respectively, while the second focusing mirror 52 focuses the second beam A2 into a second focal point B2. The two first focal points B1 and the second focal point B2 form a scribing line with minimal edge chipping and meeting the required depth and width.

[0078] During laser scribing, the protection line optical path 3 can be activated first, the scribe line optical path 4 can be disabled, and then the scribe line optical path 4 can be activated and the protection line optical path 3 can be disabled. The first focusing mirror 51 operates first, while the second focusing mirror 52 does not operate. The first focusing mirror 51 focuses the two sub-beams A11 into two first focal points B1, respectively, and two protection lines are formed through the two first focal points B1. The second focusing mirror 52 operates again, while the first focusing mirror 51 does not operate. The second focusing mirror 52 focuses the second beam A2 into a second focal point B2, and etching is performed centered on the two protection lines through the second focal point B2, forming a scribing line with minimal edge chipping and meeting the required depth and width.

[0079] In some embodiments, the protection line optical path 3 includes a first optical shutter 34 , and the scribe line optical path 4 includes a second optical shutter 42 .

[0080] The first optical shutter 34 is configured to control the on / off state of the protection line optical path 3. When the first optical shutter 34 is open, the protection line optical path 3 is on, i.e., the protection line optical path 3 is enabled. The first light beam A1 is split into two sub-beams A11 in the protection line optical path 3 and propagates to the first focusing mirror 51, causing the first focusing mirror 51 to operate. When the first optical shutter 34 is closed, the protection line optical path 3 is disconnected, and the first light beam A1 cannot propagate in the protection line optical path 3, or the two sub-beams A11 cannot propagate to the first focusing mirror 51, causing the first focusing mirror 51 to not operate.

[0081] The second optical shutter 42 is configured to control the on / off of the scribed line optical path 4. When the second optical shutter 42 is open, the scribed line optical path 4 is on, i.e., the scribed line optical path 4 is enabled, and the second light beam A2 propagates through the scribed line optical path 4 to the second focusing mirror 52, causing the second focusing mirror 52 to operate. When the second optical shutter 42 is closed, the scribed line optical path 4 is disconnected, and the second light beam A2 cannot propagate in the scribed line optical path 4, or the second light beam A2 cannot propagate to the second focusing mirror 52, causing the second focusing mirror 52 to not operate.

[0082] During laser scribing, the first optical gate 34 is first opened and the second optical gate 42 is closed to enable the protection line optical path 3 and close the scribing line optical path 4. The protection line optical path 3 splits the first light beam A1 into two sub-beams A11 and transmits them to the first focusing mirror 51. The first focusing mirror 51 focuses the two sub-beams A11 into two first focal points B1, respectively, and forms two protection lines through the two first focal points B1. Then, the second optical gate 42 is opened and the first optical gate 34 is closed to enable the scribing line optical path 4. The protection line optical path 3 is closed. The scribing line optical path 4 transmits the second light beam A2 to the second focusing mirror 52. The second focusing mirror 52 focuses the second light beam A2 into the second focal point B2. Etching is performed centered on the two protection lines through the second focal point B2, forming a scribing line with minimal edge chipping and meeting the required depth and width.

[0083] The first optical shutter 34 can be located at any position in the protection line optical path 3, as long as it can control the on / off of the protection line optical path 3. This is not specifically limited here. The second optical shutter 42 can be located at any position in the scribed line optical path 4, as long as it can control the on / off of the scribed line optical path 4. This is not specifically limited here.

[0084] In some embodiments, the first optical gate 34 is located on the light entrance side or the light exit side of the protection line optical path 3. When the first optical gate 34 is located on the light entrance side of the protection line optical path 3, the first optical gate 34 can control the on / off of the path of the first light beam A1 propagating to the protection line optical path 3; when the first optical gate 34 is located on the light exit side of the protection line optical path 3, the first optical gate 34 can control the on / off of the path of the two sub-beams A11 propagating to the first focusing mirror 51. It should be noted that the first optical gate 34 can also be located on the light entrance side of the first focusing mirror 51, or the first focusing mirror 51 has the first optical gate 34, so that the first optical gate 34 controls the on / off of the path of the two sub-beams A11 propagating to the first focusing mirror 51.

[0085] The second optical gate 42 is located on the light entrance side or the light exit side of the scribed line optical path 4. When the second optical gate 42 is located on the light entrance side of the scribed line optical path 4, the second optical gate 42 can control the on / off of the path of the second light beam A2 propagating to the scribed line optical path 4; when the second optical gate 42 is located on the light exit side of the scribed line optical path 4, the second optical gate 42 can control the on / off of the path of the second light beam A2 propagating to the second focusing mirror 52. It should be noted that the second optical gate 42 can also be located on the light entrance side of the second focusing mirror 52, or the second focusing mirror 52 has the second optical gate 42, so that the second optical gate 42 controls the on / off of the path of the second light beam A2 propagating to the second focusing mirror 52.

[0086] According to the laser scribing device of the present application, a protection line optical path 3 and a scribing line optical path 4 are set, so that after the first beam splitter 2 divides the Gaussian beam A emitted by the laser 1 into a first beam A1 and a second beam A2, the protection line optical path 3 divides the first beam A1 into two sub-beams A11, and the focuser 5 focuses the two sub-beams A11 into two small focal points with the same diameter, and the distance between the two small focal points meets the scribing line width requirement, so as to form two consistent protection lines by scribing. The scribing line optical path 4 transmits the second beam A2 to the focuser 5, and the focuser 5 focuses the second beam A2 into a large focal point with a diameter meeting the scribing line width requirement, and the scribing is centered with the two protection lines as the reference, so as to form a scribing line with extremely small edge collapse and depth and width that meet the requirements, and reduce the risk of damage to other film layers, thereby improving the scribing effect without increasing the core device laser.

[0087] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a particular order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "first," "second," and the like generally distinguish objects of a class and do not limit the number of objects. For example, the first object may be one or more.

[0088] In the description of this application, “plurality” means two or more.

[0089] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0090] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and intent of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A laser scribing device, characterized in that: It includes a laser, a first beam splitter, a protection line optical path, a scribed line optical path and a focuser; The laser is configured to emit a Gaussian beam; The first beam splitter is configured to split the Gaussian beam into a first beam and a second beam; The protection line optical path is configured to split the first light beam into two sub-beams; The scribed line optical path is configured as an optical path for the second light beam to propagate to the focuser; The focuser is configured to focus the two sub-beams into two first focal points respectively, and to focus the second beam into a second focus, the diameters of the two first focal points are the same, the diameter of the second focus is larger than the diameter of the first focus, and the distance between the two first focal points is greater than or equal to the diameter of the second focus.

2. The laser scribing device according to claim 1, wherein: The two first focal points and the second focal point are located in the same processing plane.

3. The laser scribing device according to claim 1, wherein: The protection line optical path includes a first beam expander and a second beam splitter sequentially distributed along the propagation direction of the first light beam; The first beam expander is configured to expand the first light beam; The second beam splitter is configured to split the expanded first beam into the two sub-beams.

4. The laser scribing device according to claim 3, wherein: The second beam splitter includes a first half-wave plate and a polarization beam splitter plate sequentially distributed along the propagation direction of the first light beam; The first half-wave plate is configured to adjust the polarization state of the first light beam after beam expansion; The polarization beam splitter is configured to split the adjusted first light beam into the two sub-beams.

5. The laser scribing device according to claim 3, wherein: The protection line optical path further includes a first reflector, the first beam expander, the first reflector, and the second beam splitter are sequentially located between a light exit side of the first light beam of the first beam splitter and a light entrance side of the focuser, and the first reflector is configured to adjust a propagation path of the first light beam; The scribed line optical path includes a second reflector, which is located between the light exit side of the second light beam of the first beam splitter and the light entrance side of the focuser, and is configured to adjust a propagation path of the second light beam.

6. The laser scribing device according to claim 1, wherein: The laser scribing device further includes a second beam expander; The second beam expander is located between the light output side of the laser and the light input side of the first beam splitter, and is configured to collimate and expand the Gaussian beam.

7. The laser scribing device according to claim 6, wherein: The first beam splitter comprises a second half-wave plate and a polarization beam splitter prism sequentially distributed along the propagation direction of the Gaussian beam; The second half-wave plate is configured to adjust the polarization state of the collimated and expanded Gaussian beam; The polarization beam splitter is configured to split the adjusted Gaussian beam into the first beam and the second beam.

8. The laser scribing device according to claim 1, wherein: The focuser includes a first focusing mirror and a second focusing mirror; The first focusing mirror is configured to focus the two sub-beams into the two first focal points respectively; The second focusing mirror is configured to focus the second light beam to the second focus.

9. The laser scribing device according to any one of claims 1 to 8, characterized in that: The protection line optical path includes a first optical gate, which is located on the light entrance side or the light exit side of the protection line optical path; the ruled line optical path includes a second optical gate, which is located on the light entrance side or the light exit side of the ruled line optical path; The first optical shutter is configured to control the on and off of the protection line optical path; The second optical shutter is configured to control the on and off of the scribe line optical path.

10. The laser scribing device according to any one of claims 3 to 5, characterized in that: The first beam expander includes a 2-10 times beam expander; and / or the laser includes a picosecond laser with a wavelength of 532nm.

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