SMD metal ceramic tube base structure of GaN HEMT device
Through the SMD cermet tube base structure of GaN HEMT devices, combined with specific materials and electrode design, the problems of large parasitic inductance and poor thermal management in traditional packaging structures are solved, and high-performance electrode connection and thermal management are achieved.
Patent Information
- Application Number
- CN202422021476.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-20
- Publication Date
- 2025-08-29
- Estimated Expiration
- 2034-08-20
AI Technical Summary
Traditional packaging structures have problems such as large parasitic inductance and poor thermal management in high-frequency and high-power applications, which limits the performance improvement of GaN HEMT devices.
The SMD cermet tube base structure using GaN HEMT devices is connected to the ceramic plate through an integrated electrode. Combined with W85Cu15 material with high thermal conductivity and high airtight alumina material, auxiliary electrodes are set to reduce parasitic inductance, increase switching speed and improve thermal management.
It realizes the reduction of parasitic inductance, increase switching speed, reduce switching losses, improve thermal management, and meet the needs of high-performance power devices.
Smart Images
Figure CN223284973U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to an SMD metal ceramic tube base structure of a GaN HEMT device. Background Art
[0002] As electronic devices evolve towards miniaturization and higher efficiency, higher requirements are placed on the packaging of power semiconductor devices. Traditional packaging structures suffer from large parasitic inductance and poor thermal management in high-frequency, high-power applications, limiting further improvements in device performance. Emerging GaN HEMT devices are even more sensitive to these performance issues. Utility Model Content
[0003] In order to solve the above technical problems, the utility model provides an SMD metal ceramic tube base structure of a GaN HEMT device.
[0004] The utility model is achieved through the following technical solutions.
[0005] The utility model provides an SMD metal ceramic tube base structure of a GaN HEMT device;
[0006] Including ceramic plates,
[0007] One end of the upper surface of the ceramic plate is provided with a chip welding plate and an auxiliary interface, and the other end is provided with two electrode columns;
[0008] The lower end surface of the ceramic plate is provided with: a G-pole electrode and an E-pole electrode respectively connected to the two electrode columns, an S-pole electrode connected to the chip welding plate, and an auxiliary electrode covering the auxiliary interface;
[0009] A sealing ring is provided on the edge of the upper end surface of the ceramic plate.
[0010] The electrode column, chip welding plate, G-pole electrode, E-pole electrode, and S-pole electrode are all square. The G-pole electrode and the E-pole electrode have the same size and their length and width are larger than the electrode column. The length and width of the S-pole electrode are larger than the chip welding plate. The electrode column and the G-pole electrode or the E-pole electrode are an integrated structure, and the chip welding plate and the S-pole electrode are an integrated structure.
[0011] The two side corners of the G-pole electrode and the E-pole electrode away from the edge of the ceramic plate and the four side corners of the electrode column, the chip welding plate and the S-pole electrode are all rounded.
[0012] The edges of the G-pole electrode and the E-pole electrode are flush with adjacent edges of the ceramic plate.
[0013] The electrode columns and the chip welding plate are of the same height and the tops of the electrode columns and the chip welding plate extend out of the upper end surface of the ceramic plate.
[0014] The thicknesses of the G-pole electrode, the E-pole electrode, the S-pole electrode and the auxiliary electrode are the same.
[0015] The beneficial effects of the present invention are: the conductive performance of the electrode is guaranteed by connecting the integrated electrode to the device on the ceramic plate, and the auxiliary electrode is provided to reduce parasitic inductance, increase switching speed, reduce switching loss, and improve thermal management. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a structural diagram of the utility model;
[0017] Figure 2 This is a schematic diagram of the chip welding board structure of the present utility model;
[0018] Figure 3 This is a schematic diagram of the external electrode structure of the utility model;
[0019] Figure 4 For the utility model Figure 2 Schematic diagram of the cross-section structure at AA;
[0020] Figure 5 For the utility model Figure 2 Schematic diagram of the cross-section structure at BB;
[0021] In the figure: 1-sealing ring, 2-ceramic plate, 3-auxiliary interface, 4-electrode column, 5-chip welding plate, 6-G pole electrode, 7-E pole electrode, 8-S pole electrode, 9-auxiliary electrode. DETAILED DESCRIPTION
[0022] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the described solution.
[0023] An SMD metal ceramic tube base structure for a GaN HEMT device;
[0024] Including ceramic plate 2,
[0025] One end of the upper end surface of the ceramic plate 2 is provided with a chip bonding plate 5 and an auxiliary interface 3, and the other end is provided with two electrode columns 4;
[0026] The lower end surface of the ceramic plate 2 is provided with: a G-pole electrode 6 and an E-pole electrode 7 connected to the two electrode posts 4 respectively, an S-pole electrode 8 connected to the chip bonding plate 5, and an auxiliary electrode 9 covering the auxiliary interface 3;
[0027] A sealing ring 1 is provided on the edge of the upper end surface of the ceramic plate 2 .
[0028] The electrode column 4, chip welding plate 5, G-pole electrode 6, E-pole electrode 7, and S-pole electrode 8 are all square. The G-pole electrode 6 and the E-pole electrode 7 have the same size and their length and width are both larger than the electrode column 4. The length and width of the S-pole electrode 8 are both larger than the chip welding plate 5. The electrode column 4 and the G-pole electrode 6 or the E-pole electrode 7 are an integrated structure, and the chip welding plate 5 and the S-pole electrode 8 are an integrated structure.
[0029] The corners on both sides of the G-pole electrode 6 and the E-pole electrode 7 away from the edge of the ceramic plate 2 and the four side corners of the electrode column 4, the chip bonding plate 5 and the S-pole electrode 8 are all rounded.
[0030] The edges of the G-pole electrode 6 and the E-pole electrode 7 are flush with the adjacent edges of the ceramic plate 2 .
[0031] The electrode columns 4 and the chip bonding plate 5 are of the same height and their tops extend out of the upper end surface of the ceramic plate 2 .
[0032] The G-pole electrode 6 , the E-pole electrode 7 , the S-pole electrode 8 , and the auxiliary electrode 9 have the same thickness.
[0033] This application refers to the SMD-0.5 standard package size, and connects the device on the ceramic plate 2 through an integrated electrode to ensure the conductivity of the electrode, and sets an auxiliary electrode to reduce parasitic inductance, increase switching speed, reduce switching loss, and improve thermal management.
[0034] During the manufacturing process, W85Cu15, a material with high thermal conductivity, is used as the heat sink, and alumina (black), with high airtightness and insulation properties, is used as the ceramic component to ensure the reliability and stability of the device. Furthermore, precise control of the plating thickness during the process ensures electrical performance parameters such as airtightness and inter-electrode insulation resistance, meeting the requirements of high-performance power devices.
[0035] 1. Ceramic forming process
[0036] Equipment: Use dry press or isostatic press for ceramic forming.
[0037] Conditions: At room temperature, control humidity at 45%-55% to ensure powder fluidity and molding quality.
[0038] Pressure: The pressure applied by dry pressing is 50-100 MPa, and the pressure applied by isostatic pressing is 200-300 MPa.
[0039] Holding time: Maintain pressure for 5-10 minutes to ensure uniform molding.
[0040] 2. Sintering process
[0041] Equipment: Use high temperature sintering furnace equipped with atmosphere control system.
[0042] Atmosphere: Sintering is carried out under nitrogen or inert gas protective atmosphere to prevent oxidation.
[0043] Temperature: The sintering temperature is controlled at 1600℃-1700℃ and adjusted according to the material properties.
[0044] Time: Maintain high temperature sintering for 2-3 hours to ensure that the material is fully densified.
[0045] 3. Metallization process
[0046] Equipment: Use screen printing machine for silver paste printing.
[0047] Conditions: At room temperature, humidity is controlled at 50%-60% to ensure the adhesion of silver paste.
[0048] Printing: Print the silver paste evenly on the ceramic surface with a thickness of 10-20 microns.
[0049] Silver burning process: Silver is burned at 800℃-900℃ in hydrogen or reducing atmosphere to form a metallization layer.
[0050] Electrode production: High-precision electrodes are produced using electrochemical deposition or physical vapor deposition technology.
Claims
1. A SMD metal-ceramic base structure for a GaN HEMT device, characterized by: comprising a ceramic plate (2), A chip welding plate (5) and an auxiliary interface (3) are provided at one end of the upper end surface of the ceramic plate (2); and two electrode columns (4) are provided at the other end. The lower end surface of the ceramic plate (2) is provided with: a G-pole electrode (6) and an E-pole electrode (7) respectively connected to the two electrode columns (4), an S-pole electrode (8) connected to the chip soldering plate (5), and an auxiliary electrode (9) covering the auxiliary interface (3); A sealing ring (1) is provided on the edge of the upper end surface of the ceramic plate (2).
2. The SMD metal-ceramic base structure for a GaN HEMT device according to claim 1, wherein: The electrode column (4), chip welding plate (5), G-pole electrode (6), E-pole electrode (7), and S-pole electrode (8) are all square; the G-pole electrode (6) and the E-pole electrode (7) have the same size and are both larger in length and width than the electrode column (4); the S-pole electrode (8) is larger in length and width than the chip welding plate (5); the electrode column (4) and the G-pole electrode (6) or the E-pole electrode (7) are an integrated structure; and the chip welding plate (5) and the S-pole electrode (8) are an integrated structure.
3. The SMD metal-ceramic base structure for a GaN HEMT device according to claim 2, wherein: The two side corners of the G-pole electrode (6) and the E-pole electrode (7) away from the edge of the ceramic plate (2) and the four side corners of the electrode column (4), the chip welding plate (5) and the S-pole electrode (8) are all rounded.
4. The SMD metal-ceramic base structure for a GaN HEMT device according to claim 3, wherein: The edges of the G-pole electrode (6) and the E-pole electrode (7) are flush with adjacent edges of the ceramic plate (2).
5. The SMD metal-ceramic base structure for a GaN HEMT device according to claim 1, wherein: The electrode column (4) and the chip welding plate (5) are of the same height and the tops of both extend out of the upper end surface of the ceramic plate (2).
6. The SMD metal-ceramic base structure for a GaN HEMT device according to claim 1, wherein: The G-pole electrode (6), the E-pole electrode (7), the S-pole electrode (8), and the auxiliary electrode (9) have the same thickness.