Ultralow-resistance transparent conductive film

Abstract

The utility model discloses an ultralow-resistance transparent conductive thin film, which comprises an indium tin oxide thin film conductive layer II, a nickel oxide thin film barrier layer II, an Ag thin film conductive layer I, a nickel oxide thin film barrier layer I, a niobium pentoxide thin film high-folding layer, a silicon dioxide thin film low-folding layer, a base layer and a flexible base material which are sequentially arranged, the thickness of the second indium tin oxide thin film conducting layer is 70 nm, the thickness of the first Ag thin film conducting layer is 2 nm, and the thickness of the second nickel oxide thin film barrier layer and the thickness of the first nickel oxide thin film barrier layer are both 3 nm. According to the utility model, the two conductive layers and the two barrier layers clamped between the two conductive layers are arranged, and the two conductive layers and the barrier layers are all vacuum magnetron sputtering deposition material layers, so that the resistance is reduced, the contact sensitivity is improved, and the thickness of each layer of material can be accurately regulated and controlled.

Description

Technical Field

[0001] The utility model belongs to the technical field of ultra-low resistance transparent conductive films, in particular to an ultra-low resistance transparent conductive film. Background Art

[0002] With the improvement of living standards, people's demand for large sizes is getting higher and higher, especially for commercial displays and large-size TVs. Synchronously, the demand for touch is also getting higher and higher. The previous large-size infrared touch can no longer meet people's touch needs. The demand for capacitive multi-touch is imminent. The conventional domestic transparent conductive films are all high-resistance. After the touch products are made, the single-line capacitance is not enough, which will cause problems such as insensitive contacts. Therefore, the market urgently needs a low-resistance transparent conductive film. Utility Model Content

[0003] The purpose of the present invention is to provide an ultra-low resistance transparent conductive film to solve the technical problems mentioned in the above background technology.

[0004] The utility model provides a technical solution to the above-mentioned technical problems as follows: an ultra-low resistance transparent conductive film, which includes a second indium tin oxide thin film conductive layer, a second nickel oxide thin film barrier layer, a first Ag thin film conductive layer, a first nickel oxide thin film barrier layer, a niobium pentoxide thin film high-folding layer, a silicon dioxide thin film low-folding layer, a base layer and a flexible substrate, the base layer being a silicon nitride thin film.

[0005] Preferably, the thickness of the second indium tin oxide thin film conductive layer is 70 nm.

[0006] Preferably, the thickness of the Ag thin film conductive layer 1 is 2 nm.

[0007] Preferably, the thickness of the second nickel oxide thin film barrier layer and the first nickel oxide thin film barrier layer are both 3 nm.

[0008] Preferably, the thickness of the low-fold layer of the silicon dioxide film is 40 nm.

[0009] Preferably, the thickness of the high-fold layer of the niobium pentoxide film is 8 nm.

[0010] Preferably, the thickness of the primer layer is 3 nm.

[0011] Preferably, the flexible substrate is transparent, and the material of the flexible substrate is any one of PI material, PET material or COP material.

[0012] Preferably, the thicknesses of the PI material, the PET material and the COP material are 50 μm, 100 μm and 125 μm respectively.

[0013] 1. The beneficial effects of the present invention are as follows: by providing two conductive layers and two barrier layers sandwiched between the two conductive layers, and both the two conductive layers and the barrier layers are vacuum magnetron sputtering deposited material layers, the present invention can reduce the resistance and improve the contact sensitivity while precisely controlling the thickness of each layer of material. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The above and / or other advantages of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. These drawings are only illustrative and do not limit the present invention, wherein:

[0015] Figure 1 This is a schematic diagram of the structure of an ultra-low resistance transparent conductive film according to an embodiment of the present invention.

[0016] In the accompanying drawings, the components represented by the reference numerals are as follows:

[0017] 1. Indium tin oxide thin film conductive layer 2, 2. Nickel oxide thin film barrier layer 2, 3. Ag thin film conductive layer 1, 4. Nickel oxide thin film barrier layer 1, 5. Niobium pentoxide thin film high fold layer, 6. Silicon dioxide thin film low fold layer, 7. Base layer, 8. Flexible substrate. DETAILED DESCRIPTION

[0018] Hereinafter, embodiments of the ultra-low resistance transparent conductive film of the present invention will be described with reference to the accompanying drawings.

[0019] The embodiments described herein are specific embodiments of the present invention and are used to illustrate the concept of the present invention. They are illustrative and exemplary and should not be construed as limiting the embodiments and scope of the present invention. In addition to the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the claims and the disclosure of the specification, including technical solutions that adopt any obvious substitutions and modifications to the embodiments described herein.

[0020] The accompanying drawings in this specification are schematic diagrams that assist in illustrating the concepts of the present invention and schematically illustrate the shapes of the various components and their interrelationships. Please note that to clearly illustrate the structures of the various components of the embodiments of the present invention, the drawings are not drawn to the same scale. The same reference numerals are used to indicate the same parts.

[0021] Figure 1An ultra-low resistance transparent conductive film according to an embodiment of the present invention is shown, which includes an indium tin oxide thin film conductive layer 21, a nickel oxide thin film barrier layer 22, an Ag thin film conductive layer 13, a nickel oxide thin film barrier layer 14, a niobium pentoxide thin film high-folding layer 5, a silicon dioxide thin film low-folding layer 6, a base layer 7 and a flexible substrate 8 arranged in sequence. The thickness of the indium tin oxide thin film conductive layer 21 is 70nm, the thickness of the Ag thin film conductive layer 13 is 2nm, the thickness of the nickel oxide thin film barrier layer 22 and the nickel oxide thin film barrier layer 14 are both 3nm, the thickness of the niobium pentoxide thin film high-folding layer 5 is 8nm, the thickness of the silicon dioxide thin film low-folding layer 6 is 40nm, the base layer 7 is a silicon nitride thin film, the thickness of the base layer 7 is 3nm, and the flexible substrate 8 is transparent. The material of the flexible substrate 8 is any one of PI material, PET material or COP material. The thicknesses of the PI material, PET material and COP material are 50μm, 100μm and 125μm respectively.

[0022] Working principle: When using the utility model, the user sets two conductive layers and two barrier layers sandwiched between the two conductive layers, and the two conductive layers and the barrier layers are vacuum magnetron sputtering deposited material layers. While reducing the resistance and improving the contact sensitivity, the thickness of each layer of material can be precisely controlled. As a large-size capacitive transparent conductive film, the conductive film has the characteristics of good stability and no etching marks, and is suitable for promotion within the industry. The product has good reliability when used in the solar energy industry and is suitable for promotion within the industry.

[0023] To sum up: this ultra-low resistance transparent conductive film is formed by setting two conductive layers and two barrier layers sandwiched between the two conductive layers, and both the conductive layers and the barrier layers are vacuum magnetron sputtering deposited material layers. While reducing the resistance and improving the contact sensitivity, the thickness of each layer of material can be precisely controlled.

[0024] The technical features disclosed above are not limited to the disclosed combinations with other features. Those skilled in the art can also make other combinations between the technical features according to the purpose of the utility model to achieve the purpose of the utility model.

Claims

1. An ultra-low resistance transparent conductive film, characterized in that: The invention comprises a second indium tin oxide thin film conductive layer (1), a second nickel oxide thin film barrier layer (2), a first Ag thin film conductive layer (3), a first nickel oxide thin film barrier layer (4), a niobium pentoxide thin film high fold layer (5), a silicon dioxide thin film low fold layer (6), a base layer (7) and a flexible substrate (8) which are arranged in sequence, wherein the base layer (7) is a silicon nitride thin film.

2. The ultra-low resistance transparent conductive film according to claim 1, characterized in that: The thickness of the indium tin oxide thin film conductive layer 2 (1) is 70nm.

3. The ultra-low resistance transparent conductive film according to claim 2, characterized in that: The thickness of the Ag thin film conductive layer (3) is 2 nm.

4. The ultra-low resistance transparent conductive film according to claim 3, characterized in that: The thickness of the nickel oxide thin film barrier layer 2 (2) and the nickel oxide thin film barrier layer 1 (4) are both 3 nm.

5. The ultra-low resistance transparent conductive film according to claim 4, characterized in that: The thickness of the silicon dioxide thin film low-fold layer (6) is 40 nm.

6. The ultra-low resistance transparent conductive film according to claim 5, characterized in that: The thickness of the niobium pentoxide thin film high-fold layer (5) is 8 nm.

7. The ultra-low resistance transparent conductive film according to claim 6, characterized in that: The thickness of the primer layer (7) is 3 nm.

8. The ultra-low resistance transparent conductive film according to claim 7, characterized in that: The flexible substrate (8) is transparent, and the material of the flexible substrate (8) is any one of PI material, PET material or COP material.

9. The ultra-low resistance transparent conductive film according to claim 8, characterized in that: The thicknesses of the PI material, the PET material and the COP material are 50 μm, 100 μm and 125 μm respectively.

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