Optical device and optical system

Abstract

The embodiment of the utility model relates to an optical device and an optical system. The embodiment of the utility model provides an optical device which comprises a waveguide and an optical modulator. The light modulator includes a bridge section positioned on the waveguide, wherein the bridge section includes a phase change material. The optical device also includes a heating member. The heating component comprises a middle section and two electric contact sections. The intermediate section is in direct contact with the bridge section of the light modulator. The two electrical contact sections are connected to both ends of the intermediate section, where heat generated from the heating component is transferred directly to the bridge section of the light modulator, thereby inducing its phase change.

Description

Technical Field

[0001] The embodiments of the present invention relate to an optical device having a phase change material, a manufacturing method thereof, and an optical system. Background Art

[0002] The growth of Internet and network traffic speeds is driving demand for optical-based data communications. Optical signals can be used for high-speed and secure data transmission between two devices. Many optical devices used in optical-based data communication systems can be fabricated in semiconductor devices and further integrated into silicon photonic integrated chips (PICs) for high-speed optical interconnects. Optical modulation is the process of modifying light waves based on high-frequency electrical signals containing information to enable the transmission of data and information in the form of optical signals through optical communication channels such as optical fibers or waveguides.

[0003] While existing tools for optical modulation are generally adequate for their intended purposes, they are not completely satisfactory in all respects.Therefore, there is a need to improve the efficiency and reliability of optical modulation for data and information transmission. Utility Model Content

[0004] According to an embodiment of the present invention, an optical device includes: a waveguide; an optical modulator, which includes a bridging section positioned on the waveguide, wherein the bridging section includes a phase change material; and a heating component, which includes: an intermediate section, which is in direct contact with the bridging section of the optical modulator; and two electrical contact sections, which are connected to the two ends of the intermediate section, wherein the heat generated from the heating component is directly transferred to the bridging section of the optical modulator, thereby inducing its phase change.

[0005] According to an embodiment of the present invention, a method for manufacturing an optical device includes: forming a waveguide extending along an optical axis, wherein the optical device has a first zone, a second zone, and a third zone arranged in sequence along a direction perpendicular to the optical axis of the waveguide; forming a phase change material layer on the waveguide, wherein the outer surface of the waveguide relative to the second zone is covered by the phase change material layer; and forming a heating component extending from the first zone and terminating at the third zone by passing through the second zone, wherein a section of the heating component formed in the second zone is in direct contact with the phase change material layer.

[0006] According to an embodiment of the present invention, an optical system includes: a photon generator configured to generate an optical signal; a photon controller configured to modulate the optical signal from the photon generator and including: a waveguide; an optical modulator including a bridging section positioned on the waveguide, wherein the bridging section includes a phase change material; and a heating component including: an intermediate section in direct contact with the bridging section of the optical modulator; and two electrical contact sections connected to two ends of the intermediate section, wherein the heat generated from the heating component is directly transferred to the bridging section of the optical modulator, thereby inducing its phase change; and a photon detector configured to receive the optical signal from the photon controller. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] When read in conjunction with the accompanying drawings, aspects of the embodiments of the present disclosure will be better understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various structures are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various structures may be arbitrarily increased or decreased.

[0008] Figure 1 is a schematic diagram of an optical device according to one or more embodiments of the present disclosure.

[0009] Figures 2A to 2D Various stages in the fabrication of an optical device according to one or more embodiments of the present disclosure are described.

[0010] Figure 3A is a schematic diagram of a heating component according to one or more embodiments of the present disclosure.

[0011] Figure 3B It is an explanation Figure 3A A diagram of the temperature distribution of a heating component during its operation.

[0012] Figure 4 is a schematic diagram of an optical device according to one or more embodiments of the present disclosure.

[0013] Figure 5A is a schematic diagram of a heating component according to one or more embodiments of the present disclosure.

[0014] Figure 5B It is an explanation Figure 5A A diagram of the temperature distribution of a heating component during its operation.

[0015] Figure 6 The pulse power scheme and transient thermal dynamics used to change the structural phase of phase change materials are described.

[0016] Figure 7 It is a graph of transmittance versus wavelength of a phase change material in different structural phases.

[0017] Figure 8 is a block diagram of an optical system according to one or more embodiments of the present disclosure.

[0018] Figure 9 is a schematic diagram of a photonic controller according to one or more embodiments of the present disclosure.

[0019] Figure 10 is a schematic diagram of some components of a photonic controller according to one or more embodiments of the present disclosure.

[0020] Figure 11 is a schematic diagram of an optical system according to one or more embodiments of the present disclosure.

[0021] Figure 12 is a flow chart illustrating a method of manufacturing an optical device according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0022] The following disclosure provides many different embodiments or examples of the different components for implementing the provided subject matter. Specific examples of elements and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, a first component may be formed above or on a second component and may include an embodiment in which the first component and the second component form direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not directly contact. In addition, the present disclosure may repeat element symbols and / or letters in various examples. This repetition is for simplicity and clarity purposes and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0023] Furthermore, for ease of description, spatially relative terms, such as "below," "beneath," "down," "above," "over," "up," and the like, may be used herein to describe one element or component's relationship to another element or component(s) illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0024] As used herein, terms such as "first," "second," and "third" describe various elements, components, regions, layers, and / or sections, but these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms may only be used to distinguish one element, component, region, layer, or section from another. Terms such as "first," "second," and "third" when used herein do not imply a sequence or order unless clearly indicated by the context.

[0025] As used herein, the terms "approximately," "substantially," "substantially," and "about" are used to describe and illustrate small variations. When used in conjunction with an event or circumstance, the terms may refer to instances where the event or circumstance exactly occurred as well as instances where the event or circumstance was very close to occurring.

[0026] Optical modulation allows for the manipulation of light waves or the encoding of information on waveguides. Controlling the travel and propagation of light in a waveguide involves manipulating the flow of light through the waveguide structure, thereby enabling data to be stored, processed, and retrieved in an optical device. Embodiments of the present disclosure provide an optical device comprising a phase change material (PCM) layer and a heating element in direct contact with the PCM layer. The PCM layer, which absorbs or reflects light in the waveguide, is directly controlled by the thermal energy provided by the heating element, significantly minimizing heat loss and enabling precise and efficient control of the PCM based on a pre-set program.

[0027] Figure 1 is a schematic diagram of an optical device 1 according to one or more embodiments of the present disclosure. According to some embodiments, the optical device 1 includes a waveguide 10, two cladding layers 20, an optical modulator 30, a heating element 50, and an electrical connection unit 60. It will be appreciated that for clarity of discussion, some structures of the optical device, such as those surrounding the heating element 50 and the electrical connection unit 60, are not illustrated. Furthermore, in other embodiments of the optical device 1, the components described below may be replaced or eliminated.

[0028] The waveguide 10 is a structure for guiding the flow of electromagnetic waves in a direction parallel to its optical axis LW, thereby confining them to an area within or adjacent to its surface. Figure 1 , the optical device 1 has a first zone Z1, a second zone Z2, and a third zone Z3 arranged in sequence along a transverse direction (X-axis direction), which is perpendicular to the optical axis LW.

[0029] exist Figure 1 In the embodiment shown in FIG, waveguide 10 is a silicon photonic rib waveguide and includes a base portion 11 and a rib portion 12. Base portion 11 may be formed on an insulating layer (not shown) made of silicon oxide and formed on a silicon substrate (not shown). Rib portion 12 extends from a top surface 110 of base portion 11 relative to second zone Z2. In one exemplary embodiment, rib portion 12 has a rectangular cross-section and includes a plurality of flat surfaces 120, 121, and 122 on its outer surface. For purposes of illustration, flat surface 120 is hereinafter referred to as the top plane, and flat surfaces 121 and 122 are hereinafter referred to as side planes.

[0030] The top plane 120 is positioned on the side of the rib-shaped portion 12 farthest from the base portion 11. Side planes 121 and 122 are positioned on two opposite sides of the rib-shaped portion 12 and connect the top plane 120 to the top surface 110 of the base portion 11. The top plane 120 and the side plane 121 are connected at an angle A1, and the top plane 120 and the side plane 122 are connected at an angle A2. Angles A1 and A2 can both be right angles (i.e., 90 degrees). However, it will be appreciated that many variations and modifications may be made to the embodiments of the present disclosure. In some other embodiments, angles A1 and A2 are greater than 90 degrees. In some other embodiments, the top plane 120 is connected to each of the side planes 121 or 122 at a fillet angle.

[0031] The dimensions of the rib portion 12 and base portion 11 can be determined based on the application of the optical device 1. For example, if the rib portion 12 has a larger cross-sectional area relative to the base portion 11, advantages such as low coupling loss between the optical fiber and the waveguide can be achieved, while allowing light with multiple polarization states to be transmitted. In some exemplary embodiments, if the width of the rib portion 12 is less than approximately 800 nm, the silicon photonic rib waveguide will be single-mode for each polarization. However, it will be appreciated that many variations and modifications may be made to the embodiments of the present disclosure. Waveguides having different geometries may be used in the optical devices of the present disclosure. For example, the waveguide may be non-planar and have a circular or rectangular cross-section.

[0032] The two cladding layers 20 are configured to reduce optical loss of light propagating through the waveguide 10. In some embodiments, the two cladding layers 20 are formed on the top surface 110 of the base portion 11 of the waveguide 10. Figure 1 , since both claddings 20 have a thickness lower than the height of the rib-shaped portion 12, the lower region of each of the side planes 121 and 122 is covered by the two claddings 20, but the upper region of each of the side planes 121 and 122 is exposed by the two claddings 20. The material of the cladding 20 has a lower refractive index than that of the waveguide 10. In other words, light travels slower through the waveguide 10 than through the cladding 20. Waves in the cladding 20 decay very quickly for evanescent waves. In one exemplary embodiment, the waveguide 10 is made of pure silicon dioxide or silicon nitride (Si3N4) having a high refractive index, and the cladding 20 is made of a silicon dioxide-based material having a lower refractive index, such as silicon oxide (SiO2). It will be understood that although Figure 1 It is not illustrated in the figure, but there may be another cladding (not shown) covering the rib-shaped portion 12 and the cladding 20 of the waveguide 10. In addition, there may be another cladding positioned below the waveguide 10.

[0033] The optical modulator 30 is configured to condition the optical beam propagating through the waveguide 10. In some embodiments, Figure 1, the optical modulator 30 includes a phase change material (PCM) layer formed above the waveguide 10 and extending along the X-axis from the first zone Z1 through the second zone Z2 to the third zone Z3 of the optical device 1. In some embodiments, the optical modulator 30 includes two extended sections 31 and 32 positioned in the first zone Z1 and the second zone Z2, respectively. The two extended sections 31 and 32 are positioned on the two cladding layers 20 so as to be away from the top surface 110 of the base portion 11.

[0034] Furthermore, the optical modulator 30 includes a bridge section 33 connected between the two extended sections 31 and 32. The portion of the bridge section 33 is in direct contact with the outer surface of the waveguide 10 exposed by the cladding 20. For example, the top surface 120 and the upper regions of the two side planes 121 and 122 of the waveguide 10 are covered by the bridge section 33, and no other material exists between the portion of the bridge section 33 and the top plane 120, the side plane 121, or the side plane 122 of the waveguide 10. With this arrangement, light transmitted through the region of the waveguide 10 covered by the optical modulator 30 is fully modulated by the microcavity (e.g., by enhanced absorption or refraction). However, it should be noted that many variations and modifications may be made to the embodiments of the present disclosure. In the case where the waveguide is a non-planar optical waveguide (e.g., a circular optical fiber), the outer surface of the waveguide exposed by the cladding is surrounded by the optical modulator in all lateral directions.

[0035] The phase change material of the optical modulator 30 can be rapidly and reversibly switched between an amorphous state and a crystalline state, where the optical and electronic properties of the amorphous and crystalline states are very different. The ability to rapidly switch between two states with different properties makes these materials suitable for applications in optical modulation. For example, Figure 7 This paper describes how a phase-change material atop a waveguide can be programmed into an amorphous state and a crystalline state, and subsequently read out as a change in the waveguide's transmittance to light of different wavelengths. Transmittance is defined as the ratio between the output and input optical intensities. The phase-change material can include GeTe, Ge2Sb2Te5 (GST), Ge2Sb2Se4Te1 (GSST), Sb2S3, or Sb2Se3, or similar materials.

[0036] The heating element 50 is configured to generate heat in response to the application of an electrical pulse provided by the electrical connection unit 60 due to the Joule heating effect. Figure 1, a heating element 50 is conformally formed on the light modulator 30. The heating element 50 has a high thermal conductivity, for example, between about 100 watts per meter Kelvin (W / (mK)) and about 400 W / (mK), so that the heating element 50 acts as a heat sink for the light modulator 30. In the illustrated embodiment, the heating element 50 is a copper foil, but other metal foils including suitable materials such as gold, tungsten, aluminum, silver, or the like, or combinations thereof, may also be used. The thickness of the metal foil is between about 10 μm and about 50 μm, for example, 30 μm, but other dimensions are possible.

[0037] The electrical connection unit 60 includes a first metal pad 61, a second metal pad 62, and a plurality of contacts 63 and 64. A first set of one or more contacts 63 extends downward from the first metal pad 61 to the electrical contact section 51 of the heating component 50 (e.g., to the cathode of the heating component 50) to couple the first metal pad 61 to the heating component 50. A second set of one or more contacts 64 extends downward from the second metal pad 62 to the electrical contact section 52 of the heating component 50 (e.g., to the anode of the heating component 50) to couple the second metal pad 62 to the heating component 50. It will be understood that the number and arrangement of the metal pads and contacts of the electrical connection unit 60 should not be limited to Figure 1 For example, the contact 63 and / or the contact 64 may be arranged on the heating element 50 along a line parallel to the optical axis LW of the waveguide 10 .

[0038] Figures 2A to 2D Various stages in the process of manufacturing an optical device according to one or more embodiments of the present disclosure are described. Although the method is described as a series of acts, it will be understood that in other embodiments, the order of the acts (and / or portions of the acts) may be changed. In addition, although Figures 2A to 2D A series of specific actions are described, but in other embodiments, some of the actions illustrated and / or described may be omitted. Figures 2A to 2D Additional actions not illustrated and / or described herein may be included in other embodiments.

[0039] In some embodiments, as Figure 2A , a method of manufacturing an optical device 1 includes forming a waveguide 10 and forming a silicon dioxide-based material layer 21 overlying the waveguide. The silicon dioxide-based material layer 21 can be formed on the waveguide 10 by deposition. Deposition can be performed, for example, by atomic layer deposition (ALD), vapor deposition, or some other suitable deposition process. In some embodiments, the silicon dioxide-based material includes silicon oxide (SiO2). Optionally, a chemical mechanical planarization (CMP) operation is performed to planarize the upper surface of the silicon dioxide-based material layer 21 and the top plane 120 of the waveguide 10.

[0040] After forming the silicon dioxide-based material layer 21, as shown in FIG. Figure 2B, a method of manufacturing an optical device 1 includes removing portions of a silicon dioxide-based material layer 21 to expose portions of side planes 121 and 122 of the rib-shaped portion 12. Any suitable amount of material may be removed from the silicon dioxide-based material layer 21. The amount removed may be customized by applying different etchants under different etching conditions. The removal operation may include: forming a photoresist layer or a capping layer (e.g., an oxide capping layer) over the top plane 120 of the rib-shaped portion 12; patterning the photoresist layer or the capping layer to have openings (e.g., a region of the silicon dioxide-based material layer 21 exposed relative to the first and second zones Z1 and Z2); Figure 1 and etching a portion of the silicon dioxide-based material layer 21 so as to obtain two cladding layers 20. In the depicted embodiment, the silicon dioxide-based material layer 21 is etched by a dry etching process. Alternatively, the etching process is a wet etching process, or a combination of dry and wet etching processes.

[0041] After forming the two cladding layers 20, as Figure 2C , a method of manufacturing an optical device 1 includes forming an optical modulator 30 above a waveguide 10. Forming the optical modulator may include forming (e.g., depositing) a phase change material layer on the two cladding layers 20 and the outer surfaces of the waveguide 10 exposed by the two cladding layers 20 (e.g., the top plane 120 and the side planes 121 and 122 of the waveguide 10). Deposition may be performed, for example, by atomic layer deposition (ALD), vapor deposition, or some other suitable deposition process. After forming the phase change material layer, the phase change material layer is patterned by a photolithography / etching process to form the optical modulator 30.

[0042] In some embodiments, the phase-change material of the optical modulator 30 is a conductive material that allows the current supplied from the electrical connection unit 60 to pass through the extension sections 31 and 32 and the bridge section 33, thereby heating the optical modulator 30 through the Joule heating effect. The present disclosure provides numerous exemplary embodiments for fabricating the conductive material. For example, the phase-change material layer can be subjected to an annealing process after being deposited on the waveguide. During the annealing process, dislocations and crystal defects can be restored, thereby reducing defect concentration and enhancing atomic lattice vibrations, which in turn enhances conductivity. Alternatively or additionally, the optical modulator 30 can be formed from a phase-change material with higher conductivity, such as GeTe.

[0043] After forming the light modulator 30, as shown in FIG. Figure 2D, a method of manufacturing the optical device 1 includes forming a heating element 50 above the optical modulator 30. Forming the heating element may include forming (e.g., depositing) a thermally conductive material layer on the two cladding layers 20, the optical modulator 30, and the outer surfaces of the waveguide 10 exposed by the cladding layers 20 and the optical modulator 30. Deposition may be performed, for example, by atomic layer deposition (ALD), vapor deposition, or some other suitable deposition process. After forming the thermally conductive material layer, the thermally conductive material layer is patterned by a photolithography / etching process to form the heating element 50.

[0044] In some embodiments, as Figure 2D , the heating element 50 conformally covers the optical modulator 30, and the sidewalls of the optical modulator 30 are flush with the sidewalls of the heating element 50. Therefore, the optical modulator 30 and the thermal heating element 50 can be patterned using the same process. However, it will be appreciated that many variations and modifications can be made to the embodiments of the present disclosure. In some other embodiments, the two extended sections 31 and 32 of the optical modulator 30 are omitted, and the heating element 50 is formed after the optical modulator 30 is formed. In this alternative embodiment, the electrical contact sections 51 and 52 of the heating element 50 are in direct contact with the cladding 20.

[0045] After forming the heating component 50, the method for manufacturing the optical device 1 further includes forming an electrical connection unit 60 above the heating component 50, such as Figure 1 , and forms another cladding (not shown in the figure) surrounding the rib-shaped portion 12 of the waveguide 10 and the electrical connection unit 60.

[0046] In some embodiments, as Figure 3A , the two electrical contact sections 51 and 52 are positioned at the two ends 510 and 520 of the heating element 50 and are arranged along the longitudinal axis LH. The middle section 53 is connected between the two electrical contact sections 51 and 52 and is in contact with the rib-shaped portion 12 of the waveguide 10. In some embodiments, the middle section 53 has a uniform width and thickness in a transverse direction perpendicular to the longitudinal axis LH of the heating element 50. The width of the middle section 53 is smaller than the width of the two electrical contact sections 51 and 52, so that when an electric pulse is applied to the heating element 50, the middle section 53 has a current density that is higher than the current density of the two electrical contact sections 51 and 52. A higher current density indicates a higher temperature. Therefore, as Figure 3B , the heating member 50 has the highest temperature in the center region (ie, the region where the bridge sections 33 of the light modulator 30 are connected), and the temperature gradually decreases toward the ends (ie, the two electrical contact sections 51 and 52 ).

[0047] In an embodiment where the heating element 50 and the light modulator 30 are conformally formed and both are conductive, current is transferred from the extension section 31 through the light modulator 30, through the bridging section 33, and to the extension section 32. Consequently, the light modulator 30 exhibits a thermal profile similar to that of the heating element 50. However, due to the Joule heating effect and the heat transferred from the heating element, the light modulator 30 reaches a higher temperature than the heating element 50. This approach can reduce energy consumption while achieving the desired structural phase change of the phase change material.

[0048] Figure 4 is a schematic diagram of an optical device 1 a according to one or more embodiments of the present disclosure. Figure 4 Used in Figure 1 Components with the same reference numerals as those in FIG. 1 and FIG. 2 refer to the same components or their equivalents. For the sake of brevity, this description will not be repeated here. The difference between the optical device 1 and the optical device 1a includes that the light modulator 30 and the heating element 50 are replaced by the light modulator 30a and the heating element 50a.

[0049] Figure 5A is a schematic diagram of a heating component 50a according to one or more embodiments of the present disclosure. In some embodiments, the heating component 50a includes two electrical contact sections 51 and 52 and an intermediate section 53a. The two electrical contact sections 51 and 52 are positioned at the two ends 510a and 520a of the heating component 50 and are arranged along the longitudinal axis LH. The intermediate section 53a connects the two electrical contact sections 51 and 52. In some embodiments, the width of the intermediate section 53a varies in a transverse direction perpendicular to the longitudinal axis LH. Specifically, as Figure 5A , the middle section 53a includes a heat concentrating portion 533a and two connecting portions 531a and 532a. The two connecting portions 531a and 532a each connect one end of the heat concentrating portion 533a to the electrical contact sections 51 and 52. The width W2 of the two connecting portions 531a and 532a is greater than the width W3 of the heat concentrating portion 533a in the lateral direction. Furthermore, the width W1 of the electrical contact sections 51 and 52 is greater than the width W2 of the two connecting portions 531a and 532a.

[0050] refer to Figure 3A and Figure 5A , compared with the middle section 53, the heat concentration portion 533a has two ends that are farther away from the electrical contact sections 51 and 52. Therefore, the heat dissipation rate at the two end regions of the heat concentration portion 533a is higher than the heat dissipation rate at the two end regions of the middle section 53. Therefore, compared with the middle section 53, the middle section 53a exhibits a more uniform temperature distribution, as shown in FIG. Figure 5BThe uniform temperature distribution on the middle section 53a allows the light modulator 30 to be uniformly heated, thereby achieving a structural phase change of the light modulator 30 even with a relatively low power applied to the heating element 50a.

[0051] Reference again Figure 4 In some embodiments, the optical modulator 30a includes a bridge section 33a connected between the two extension sections 31 and 32. The optical modulator 30a can be formed conformally with the heating element 50a and thus have a geometry similar to that of the heating element 50a. However, it will be appreciated that many variations and modifications can be made to the embodiments of the present disclosure. In some other embodiments, the two extension sections 31 and 32 are omitted, and thus the two electrical contact sections 51 and 52 are formed directly on the two cladding layers 20. In still other embodiments, in addition to the two extension sections 31 and 32, the portion of the bridge section 33a located below the connecting portions 531a and 532a is also omitted, and thus the two electrical contact sections 51 and 52 and the connecting portions 531a and 532a are formed directly on the two cladding layers 20.

[0052] Figure 6 The pulse power scheme and transient thermal dynamics used to change the structural phase of the phase change material are described. Due to the nature of the phase change material of the optical modulator, which exhibits different optical transmittances in different structural phases, the optical transmittance of the phase change material decreases from 95% in the case of aGST (GST in the amorphous state) to 26% in the case of cGST (GST in the crystalline state). In the present disclosure, in order to switch the structural state of the phase change material, an electric pulse is applied to the heating element 50 or 50a ( Figure 3A and Figure 5A The heat from the heating element 50 or 50a is transferred to the light modulator 30, thereby inducing a phase change in the light modulator 30.

[0053] Generally speaking, if Figure 6As shown in FIG, a phase-change material is melt-quenched (i.e., the temperature is sharply raised to above the melting temperature (T2) and quickly dissipated to room temperature) to an amorphous state 34 using a short, high-amplitude electrical pulse. Conversely, a PCM is annealed using a longer, lower-amplitude electrical pulse, where the temperature is raised between the melting temperature (T2) and the transition temperature (T1) for a period of time (to recrystallize the atomic lattice), before finally lowering the temperature to room temperature. The annealing process transforms the phase-change material to a crystalline state 35. For use in photonic memory, in some embodiments, the amorphous state is also referred to as the "reset" state, and the crystalline state is also referred to as the "set" state. The "reset" state corresponds to digital data "1" stored in the memory cell, and the "set" state corresponds to digital data "0" stored in the memory cell. According to experimental results, for GST, the transition temperature T1 is approximately 620K to approximately 660K, with a pulse duration of 1 μs to 100 ns, and T2 is approximately 900K.

[0054] Figure 8 FIG2 is a block diagram of an optical system 80 according to one or more embodiments of the present disclosure. The optical system 80 is configured to use light waves for data processing, data storage, or data communication for computing. According to some embodiments, the optical system 80 includes one or more photon generators 81, a photon controller 82, and a photon detector 83. The photon generator 81, the photon controller 82, and the photon detector 83 are coupled via an optical fiber 84. Optical communication uses the optical fiber 84 as a transmission medium. The optical fiber can be a multimode fiber (MMF), which simplifies light coupling within the fiber but limits transmission distance, or a single-mode fiber (SMF), which allows for long-distance transmission for applications such as telecommunications. The optical signal generated from the photon generator 81 is processed by the photon controller 82 and then sent to the photon detector 83 for analysis.

[0055] The photon generator 81 can be any suitable coherent light source. In some embodiments, the photon generator 81 can be a diode laser or a vertical cavity surface emitting laser (VCSEL). In some embodiments, the photon generator 81 is configured to have an output power greater than 10 mW, greater than 25 mW, greater than 50 mW, or greater than 75 mW. In some embodiments, the photon generator 81 is configured to have an output power less than 100 mW. The photon generator 81 can be configured to emit continuous light waves or light pulses ("optical pulses") of one or more wavelengths. The duration of the optical pulses can be, for example, about 100 ps. The use of multiple wavelengths of light allows for multitasking of some embodiments, allowing multiple calculations to be performed simultaneously using the same optical hardware. Some embodiments can simultaneously use two or more phase-locked light sources of the same wavelength to increase the optical power entering the optical encoder system.

[0056] The photon controller 82 is configured to adjust the amplitude or phase of the optical signal generated from the photon generator 81. Figures 9 to 11 An exemplary embodiment of the photon controller 82 is described in detail. The photon detector 83 receives the optical pulses from the photon controller 82. Each of the optical pulses is then converted into an electrical signal. In some embodiments, the intensity and phase of each of the optical pulses are measured by an optical detector within the optical receiver. The electrical signals representing these measurements are then output to a processor (not shown).

[0057] Figure 9 FIG2 is a schematic diagram of a photon controller 82 according to one or more embodiments of the present disclosure. In some embodiments, the photon controller 82 includes a plurality of transverse optical lines 841 and a plurality of longitudinal optical lines 842. The transverse optical lines 841 and the longitudinal optical lines 842 constitute an integrated 3×3 crossbar switch array chip. A plurality of optical devices 1 are positioned adjacent to the intersection of the transverse optical lines 841 and the longitudinal optical lines 842. When optical signals 811, 812, 813, and 814 enter the transverse optical line 841, a portion of the light is coupled into the waveguide 10 of the optical device 1 and then coupled into the longitudinal optical line 842, while another portion of the light is directly output through the transverse optical line 841. The optical signals 831, 832, and 833 transmitted in the longitudinal optical line 842 are then output from the photon controller 82. The different phase states of the optical modulator 30 attached to the waveguide 10 affect the coupling coefficient in the coupling region between the waveguide 10 and the optical lines. By selecting appropriate structural parameters of the optical modulator 30, signals propagating in the horizontal direction are selectively coupled and multiplexed in the optical line along the vertical direction.

[0058] Figure 10 is a schematic diagram of some components of the photon controller 82c according to one or more embodiments of the present disclosure. Figure 10 Used in Figure 9 Components with the same reference numerals as those in FIG. 8 represent the same components or their equivalents. For the sake of brevity, this description will not be repeated here. The difference between photonic controller 82c and photonic controller 82 includes replacing optical device 1 with optical device 1c. In some embodiments, optical device 1c is an optical ring resonator and includes a waveguide 10c and an optical modulator 30 attached to waveguide 10c. Waveguide 10c is a closed-loop optical path and is coupled to a transverse optical line 841 and a longitudinal optical line 842. When light having a resonant wavelength is transmitted from transverse optical line 841 through waveguide 10c, the light accumulates intensity over multiple round trips due to structural interference and is output to longitudinal optical line 842. Since several selected wavelengths will resonate within waveguide 10c, the optical ring resonator can be used as a filter.

[0059] Figure 11FIG2 is a schematic diagram of an optical system 80d according to one or more embodiments of the present disclosure. Optical system 80d is configured to use light waves for data processing, data storage, or data communication for computing. According to some embodiments, optical system 80d includes one or more photon generators 81, a photon controller 82d, and a photon detector 83. Photon controller 82d includes several optical lines, such as optical lines 843 and 844. Waveguide 10 is coupled to optical line 843, and optical modulator 30 is attached to waveguide 10. In some embodiments, optical system 80d includes a first evanescent coupler 845 and a second evanescent coupler 846 for mixing two input modes of photon controller 82d. Optical modulator 30 modulates the phase θ in optical line 843 of photon controller 82d to generate a phase difference between the two optical lines 843 and 844. Adjusting phase θ causes the intensity of light output by photon controller 82d to change from one output mode of photon controller 82d to another output mode, thereby creating a controllable and variable beam splitter.

[0060] Figure 12 is a flow chart illustrating a method S10 of manufacturing an optical device according to one or more embodiments of the present disclosure. In some embodiments, the method S10 includes an operation S11, wherein a waveguide is formed, e.g. Figure 2A The waveguide 10 in Figure 1 As shown in FIG, the waveguide 10 extends along the optical axis LW, wherein the optical device 1 has a first zone Z1, a second zone Z2 and a third zone Z3 arranged in sequence along a direction perpendicular to the optical axis LW of the waveguide 10. The method S10 further includes an operation S12, wherein a phase change material layer is formed, for example Figure 2C The outer surface of the waveguide 10 relative to the second zone Z2 is covered by a phase change material layer. The method S10 further comprises an operation S13, wherein a heating component is formed on the phase change material layer, for example Figure 2D The heating member 50 extends from the first zone Z1 and ends at the third zone Z3 by passing through the second zone Z2. The section of the heating member 50 formed in the second zone Z2 is in direct contact with the phase change material layer.

[0061] Embodiments of the present disclosure provide an optical device and a method for manufacturing the same. The optical device uses an optical modulator to modulate the properties of light transmitted through its waveguide. The optical modulator is made of a phase-change material that exhibits different light transmittances at different temperatures and is connected to a heating element that generates heat when an electric current is applied. By efficiently and directly transferring heat from the heating element to the phase-change material, the optical modulator operates with enhanced thermal efficiency, thereby enabling reliable and precise structural phase transitions of the phase-change material.

[0062] One embodiment of the present disclosure provides an optical device comprising a waveguide and an optical modulator. The optical modulator includes a bridge section positioned on the waveguide, wherein the bridge section comprises a phase change material. The optical device further comprises a heating element. The heating element comprises a middle section and two electrical contact sections. The middle section is in direct contact with the bridge section of the optical modulator. The two electrical contact sections are connected to the ends of the middle section, wherein heat generated by the heating element is directly transferred to the bridge section of the optical modulator, thereby inducing a phase change therein.

[0063] Another embodiment of the present disclosure provides a method for manufacturing an optical device. The method includes forming a waveguide extending along an optical axis. The optical device includes a first zone, a second zone, and a third zone arranged in sequence along a direction perpendicular to the optical axis of the waveguide. The method also includes forming a phase-change material layer on the waveguide. An outer surface of the waveguide opposite the second zone is covered by the phase-change material layer. The method further includes forming a heating element extending from the first zone and terminating at the third zone by passing through the second zone. A section of the heating element formed in the second zone is in direct contact with the phase-change material layer.

[0064] Yet another embodiment of the present disclosure provides an optical system. The optical system includes a photon generator configured to generate a light signal. The optical system also includes a photon controller including the optical device mentioned in the above embodiment. The optical system further includes a photon detector configured to receive the light signal from the photon controller.

[0065] The foregoing summarizes the structures of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art will appreciate that they may readily use this disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art will also recognize that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions, and modifications may be made herein without departing from the spirit and scope of the present disclosure.

[0066] Explanation of symbols

[0067] 1: Optical device

[0068] 1a: Optical device

[0069] 1c: Optical device

[0070] 10: Waveguide

[0071] 10c: Waveguide

[0072] 11: Base part

[0073] 12: Rib-shaped part

[0074] 20: Cladding

[0075] 21:Silica-based material layer

[0076] 30: Optical Modulator

[0077] 30a: Optical modulator

[0078] 31: Extension section

[0079] 32: Extension section

[0080] 33: Bridge section

[0081] 33a: Bridge section

[0082] 34: Amorphous state

[0083] 35: Crystallized state

[0084] 50: Heating component

[0085] 50a: Heating element

[0086] 51: Electrical contact section

[0087] 52: Electrical contact section

[0088] 53: Middle section

[0089] 53a: Middle section

[0090] 60: Electrical connection unit

[0091] 61: First metal pad

[0092] 62: Second metal pad

[0093] 63:Contact

[0094] 64:Contact

[0095] 80: Optical system

[0096] 80d: Optical system

[0097] 81: Photon Generator

[0098] 82: Photon Controller

[0099] 82c: Photon Controller

[0100] 82d: Photon Controller

[0101] 83: Photon detector

[0102] 110: Top surface

[0103] 120: Top plane

[0104] 121: Side plane

[0105] 122: Side plane

[0106] 510:End

[0107] 510a: End

[0108] 520:End

[0109] 520a: End

[0110] 531a: Connecting part

[0111] 532a: Connecting part

[0112] 533a: Heat concentration part

[0113] 811:Light signal

[0114] 812:Light signal

[0115] 813:Light signal

[0116] 814:Light signal

[0117] 831:Light signal

[0118] 832:Light signal

[0119] 833:Light signal

[0120] 841: Horizontal optical line

[0121] 842: Longitudinal optical line

[0122] 843: Optical Line

[0123] 844: Optical Line

[0124] 845: First evanescent coupler

[0125] 846: Second evanescent coupler

[0126] A1: Angle

[0127] A2: Angle

[0128] LH: Longitudinal axis

[0129] LW: Optical axis

[0130] S10: Methods

[0131] S11: Operation

[0132] S12: Operation

[0133] S13: Operation

[0134] T1: Transition temperature

[0135] T2: Melting temperature

[0136] W1: width

[0137] W2: width

[0138] W3: Width

[0139] Z1: First Zone

[0140] Z2: Second Zone

[0141] Z3: The third zone.

Claims

1. An optical device, characterized in that The optical device comprises: waveguide; a light modulator comprising a bridging section positioned over the waveguide, wherein the bridging section comprises a phase change material; and A heating element comprising: an intermediate section in direct contact with the bridge section of the light modulator; and Two electrical contact sections are connected to the two ends of the middle section, wherein the heat generated from the heating component is directly transferred to the bridge section of the light modulator, thereby inducing a phase change thereof.

2. The optical device according to claim 1, characterized in that The light modulator further includes two extension sections connected to two ends of the bridge section and each including a phase change material, wherein the two electrical contact sections of the heating component are in direct contact with the two extension sections of the light modulator.

3. The optical device according to claim 2, characterized in that The heating component conformally covers the light modulator.

4. The optical device according to claim 2, characterized in that The optical device further includes two cladding layers formed at both sides of the bridge section, wherein the two extension sections of the light modulator are positioned on the two cladding layers.

5. The optical device according to claim 1, characterized in that Two electrical contact sections are located at two ends of a longitudinal axis of the heating element, and a width of the middle section varies in a transverse direction perpendicular to the longitudinal axis.

6. The optical device according to claim 5, characterized in that The middle section of the heating element includes: a heat concentrating portion in contact with the bridge section of the light modulator; and Two middle portions connect the heat concentration portion to the two electrical contact sections, wherein the widths of the two middle portions are greater than the width of the heat concentration portion in the transverse direction.

7. The optical device according to claim 1, characterized in that The waveguide has at least two planes connected at an angle, and the bridge section of the light modulator covers the two planes of the waveguide.

8. The optical device according to claim 1, characterized in that The phase change material is configured to switch between a disordered amorphous state and an ordered crystalline state that exhibit different refractive indices and extinction coefficients for light traveling in the waveguide.

9. The optical device according to claim 1, characterized in that The phase change material includes GeTe, Ge2Sb2Te5 (GST), Ge2Sb2Se4Te1 (GSST), Sb2S3 or Sb2Se3.

10. An optical system, characterized in that The optical system comprises: a photon generator configured to generate an optical signal; a photon controller configured to modulate the optical signal from the photon generator and comprising: waveguide; a light modulator comprising a bridging section positioned over the waveguide, wherein the bridging section comprises a phase change material; and A heating element comprising: an intermediate section in direct contact with the bridge section of the light modulator; and two electrical contact sections connected to both ends of the middle section, wherein heat generated from the heating element is directly transferred to the bridge section of the light modulator, thereby inducing a phase change thereof; and A photon detector is configured to receive the light signal from the photon controller.

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