High-productivity PECVD (Plasma Enhanced Chemical Vapor Deposition) system suitable for plating various film layers

Abstract

The utility model relates to the field of photovoltaic equipment, and discloses a high-productivity PECVD (Plasma Enhanced Chemical Vapor Deposition) system suitable for plating various film layers, which comprises a sheet feeding preheating cavity, a one-stop film plating module and a cooling sheet discharging cavity which are sequentially connected through gate valves. The sheet inlet preheating cavity comprises a sheet inlet and outlet stacking cavity and a heating plate, and the cooling sheet outlet cavity comprises a sheet inlet and outlet stacking cavity and a cooling plate. The one-stop film coating module comprises an isolation cavity and a plurality of process cavities for coating different film layers, and the isolation cavity is arranged between two adjacent process cavities through a gate valve; and each process cavity comprises a plurality of deposition cavities which are communicated with one another and can work independently. And a stack lifting mechanism is arranged in each of the in-and-out wafer stack cavity and the isolation cavity. According to the utility model, the length of a production line can be shortened, the equipment and land occupation cost can be saved, and the productivity efficiency can be improved.

Description

Technical Field

[0001] The utility model relates to the field of photovoltaic equipment, in particular to a high-capacity PECVD system suitable for coating multiple film layers. Background Art

[0002] Traditional plate-type PECVD equipment uses a multi-station deposition technology with multiple deposition chambers in series to reduce equipment cycle time and increase single-machine production capacity. Although this technology is a feasible cost-reduction technology route, as research deepens, the multi-station deposition technology has been found to have shortcomings: the increase in the number of deposition chambers forces the process deposition to be evenly divided by the cycle time, affecting the integrity of the amorphous / microcrystalline composite film deposition process of a certain functional layer and narrowing the process window. Figure 5 As shown, multi-station deposition technology is used, whereby a single silicon wafer is deposited through multiple deposition chambers. Due to the differences in process recipes within each chamber, each deposition chamber requires its own pump assembly 700 and gate valve 600 to ensure stable connections. Furthermore, the multi-station deposition technology features a fast feed rate, resulting in a short period of auxiliary loading and unloading. To ensure a consistent operating cycle, the layout requires the wafer feed chamber 100, preheating chamber 200, process chamber 300, cooling chamber 400, and wafer discharge chamber 500, in this order. Because each chamber occupies a large area, adding more chambers increases both equipment and plant space costs. Furthermore, with multi-station deposition, gate valve 600 must be opened and closed when transferring the substrate within the process chamber, increasing deposition auxiliary time and impacting production capacity. Utility Model Content

[0003] The purpose of the utility model is to provide a high-capacity PECVD system suitable for coating multiple film layers, which can not only shorten the production line length, save equipment and land costs, but also improve production efficiency.

[0004] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0005] The utility model discloses a high-capacity PECVD system suitable for coating multiple film layers, which comprises a film inlet preheating chamber, a one-stop film coating module and a cooling film outlet chamber which are sequentially connected through a gate valve;

[0006] The sheet inlet and preheating chamber includes a sheet inlet and outlet stacking chamber and a heating plate, and the sheet cooling chamber includes a sheet inlet and outlet stacking chamber and a cooling plate;

[0007] The one-stop coating module includes an isolation chamber and several process chambers for coating different film layers. The isolation chamber is arranged between two adjacent process chambers through a gate valve. Each process chamber includes several interconnected and independently working deposition chambers.

[0008] The sheet inlet and outlet stacking cavity and the isolation cavity are both provided with stacking lifting mechanisms.

[0009] Furthermore, there are two types of process chambers, namely an i-layer plating process chamber and a p-layer plating process chamber.

[0010] Furthermore, the number of deposition chambers in the i-layer plating process chamber is equal to the number of deposition chambers in the p-layer plating process chamber.

[0011] Furthermore, the number of deposition chambers of the i-layer plating process chamber and the number of deposition chambers of the p-layer plating process chamber are both four.

[0012] Furthermore, the one-stop coating module also includes a plurality of evacuation pump groups, and one evacuation pump group is connected to one or more deposition chambers in the same process chamber.

[0013] Furthermore, the film inlet and outlet stacking chamber includes a chamber, a carrier plate transmission mechanism, a stack lifting mechanism and a vacuum generator; the carrier plate transmission mechanism is arranged on both sides of the chamber; the stack lifting mechanism can be moved up and down in the film inlet preheating chamber, and the stack lifting mechanism is provided with a plurality of support intervals for placing the carrier plates, and the bottom of the support interval is provided with a heating plate or a cooling plate, and the support interval, heating plate and cooling plate are provided with avoidance areas for avoiding the carrier plate transmission mechanism; when the stack lifting mechanism is lowered to the lowest point, the carrier plate transmission mechanism is located above the uppermost support interval, and when the stack lifting mechanism is raised to the highest point, the carrier plate transmission mechanism is located below the lowermost support interval; the vacuum generator is arranged outside the chamber.

[0014] Furthermore, the carrier plate transmission mechanism includes a transmission wheel and a transmission drive member, the transmission wheel is rotatably arranged on both sides of the cavity, the carrier plate is placed on the transmission wheel, and the transmission drive member is fixed outside the cavity and is dynamically connected to the transmission wheel for driving the transmission wheel to rotate.

[0015] Furthermore, the stack lifting mechanism includes a lifting drive unit, a guide rod group and a carrier storage frame; one end of the guide rod group is fixed to the upper end or lower end of the cavity, and the other end passes through the carrier storage frame; the lifting drive unit is connected to the carrier storage frame, and is used to drive the carrier storage frame to move up and down along the guide rod group; the support gap is located in the carrier storage frame.

[0016] Furthermore, the sheet loading and unloading chamber further comprises a chamber frame, the chamber is fixed above the chamber frame, one end of the vacuum generator is connected to the bottom of the chamber, and the other end is connected to the outside.

[0017] Furthermore, the stack lifting mechanism also includes an upper pull rod group, the lower ends of the upper pull rod group are respectively connected to the upper end surface of the carrier plate storage frame at multiple points, and the upper ends are connected to the lifting drive unit.

[0018] Furthermore, the isolation cavity is the sheet entry and exit stacking cavity.

[0019] The benefits of this utility model are:

[0020] 1. This utility model uses a one-stop deposition structure instead of the existing multi-station deposition technology. The deposition chambers within the process chamber are interconnected and can operate independently. Therefore, there is no need to install a vacuum pump set in each chamber. The exhaust pipes of several deposition chambers can be connected in series through pipes to the same pump set for vacuum exhaust, reducing the number of pump sets and saving costs. At the same time, the gate valves between deposition chambers are eliminated, which can reduce the auxiliary process time of the process chamber, reduce the equipment cycle time, and improve production capacity.

[0021] 2. At the same time, the one-stop deposition structure is a long-cycle deposition, and the front-end and rear-end loading and unloading and pre-processing time are lengthened, so that the cavity can be integrated, and the functions of the existing technology's feed cavity and preheating cavity, cooling cavity and discharge cavity are merged into a feed preheating cavity and a cooling discharge cavity, reducing the number of cavities, shortening the production line length, reducing land costs, and reducing equipment processing and manufacturing costs and installation period.

[0022] 3. By setting up an isolation chamber to isolate the gas components between different process chambers, gas washing and vacuuming can be performed in the isolation chamber, so that different film layers can be deposited on one line, the equipment is integrated, and the entire line equipment is made more compact, reducing the floor space. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 It is a schematic diagram of this embodiment.

[0025] Figure 2 It is a front cross-sectional view of this embodiment.

[0026] Figure 3 It is a side cross-sectional view of the inlet and outlet chip stack cavity.

[0027] Figure 4 This is a schematic diagram of the avoidance zone.

[0028] Figure 5 It is a prior art diagram of the background art.

[0029] Description of main component symbols:

[0030] 1. Film feeding preheating chamber;

[0031] 2. One-stop coating module, 21. i-layer coating process chamber, 211. First i-layer coating deposition chamber, 212. Second i-layer coating deposition chamber, 213. Third i-layer coating deposition chamber, 214. Fourth i-layer coating deposition chamber, 22. p-layer coating process chamber, 221. First p-layer coating deposition chamber, 222. Second p-layer coating deposition chamber, 223. Third p-layer coating deposition chamber, 224. Fourth p-layer coating deposition chamber, 25. Evacuation pump group;

[0032] 3. Cooling the film cavity;

[0033] 4. In and out sheet stacking chamber, 41. Chamber frame, 42. Chamber, 43. Plate carrier transmission mechanism, 431. Transmission wheel, 432. Transmission drive member, 44. Stack lifting mechanism, 441. Support interval, 442. Avoidance area, 443. Lifting drive unit, 444. Upper pull rod group, 445. Guide rod group, 446. Plate carrier storage frame, 45. Vacuum generator;

[0034] 5. Heating plate;

[0035] 6. Cooling plate.

[0036] 7. Isolation cavity,

[0037] 81. First gate valve, 82. Second gate valve, 83. Third gate valve, 84. Fourth gate valve, 85. Fifth gate valve, 86. Sixth gate valve DETAILED DESCRIPTION

[0038] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0039] In the present invention, unless otherwise specified, directional words such as "up, down, left, right" are generally understood in conjunction with the directions shown in the drawings and actual applications.

[0040] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of this utility model, "plurality" means two or more, unless otherwise specifically defined.

[0041] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, a first feature being "above," "above," and "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is at a higher level than the second feature. A first feature being "below," "below," and "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0042] The endpoints of the ranges and any values ​​disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values ​​can be combined to form one or more new numerical ranges, and these numerical ranges should be considered to be specifically disclosed herein. The terms "optional" and "optional" mean that a range may or may not be included (or may or may not be present).

[0043] like Figures 1 to 4 As shown, the utility model discloses a high-capacity PECVD system suitable for coating multiple film layers, which includes a film inlet preheating chamber 1, a one-stop coating module 2 and a cooling film outlet chamber 3 connected in sequence through a gate valve.

[0044] The one-stop coating module 2 includes an isolation chamber 7, an evacuation pump assembly 25, and several process chambers for coating different film layers. The isolation chamber 7 is located between two adjacent process chambers via a gate valve. Each process chamber includes several interconnected and independently operable deposition chambers. One evacuation pump assembly 25 communicates with one or more deposition chambers within the same process chamber.

[0045] The sheet preheating chamber 1 includes a sheet stacking chamber 4 and a heating plate 5, and the sheet cooling chamber 3 includes a sheet stacking chamber 4 and a cooling plate 6. A stack lifting mechanism 44 is provided in both the sheet stacking chamber 4 and the isolation chamber 7.

[0046] In this embodiment, two process chambers are provided: an i-layer process chamber 21 for depositing an intrinsic silicon passivation layer, and a p-layer process chamber 22 for depositing a p-type silicon doped layer. An isolation chamber 7 is provided between the i-layer process chamber 21 and the p-layer process chamber 22. The isolation chamber 7 utilizes a wafer stacking chamber 4 for entry and exit.

[0047] Among them, the number of deposition chambers of the i-layer coating process chamber 21 and the number of deposition chambers of the p-layer coating process chamber 22 are equal, both of which are four, namely the first i-layer coating deposition chamber 211, the second i-layer coating deposition chamber 212, the third i-layer coating deposition chamber 213 and the fourth i-layer coating deposition chamber 214, and the first p-layer coating deposition chamber 221, the second p-layer coating deposition chamber 222, the third p-layer coating deposition chamber 223 and the fourth p-layer coating deposition chamber 224.

[0048] Therefore, the PECVD system of this embodiment includes a loader, a film preheating chamber 1, a first i-layer deposition chamber 211, a second i-layer deposition chamber 212, a third i-layer deposition chamber 213, a fourth i-layer deposition chamber 214, an isolation chamber 7, a first p-layer deposition chamber 221, a second p-layer deposition chamber 222, a third p-layer deposition chamber 223, a fourth p-layer deposition chamber 224, a cooling and discharging chamber 3 and a unloader connected in sequence.

[0049] Among them, gate valves are provided between the loader and the sheet preheating chamber 1, between the sheet preheating chamber 1 and the first i-layer deposition chamber 211, between the fourth i-layer deposition chamber 214 and the isolation chamber 7, between the isolation chamber 7 and the first p-layer deposition chamber 221, between the fourth p-layer deposition chamber 224 and the cooling sheet discharge chamber 3, and between the cooling sheet discharge chamber 3 and the unloader. They are the first gate valve 81, the second gate valve 82, the third gate valve 83, the fourth gate valve 84, the fifth gate valve 85, and the sixth gate valve 86.

[0050] The first i-layer deposition chamber 211 , the second i-layer deposition chamber 212 , the third i-layer deposition chamber 213 , and the fourth i-layer deposition chamber 214 are interconnected and can operate independently.

[0051] The first p-layer deposition chamber 221 , the second p-layer deposition chamber 222 , the third p-layer deposition chamber 223 and the fourth p-layer deposition chamber 224 are interconnected and can operate independently.

[0052] The multi-station process chamber in the existing technology is a short-cycle deposition structure, that is, multiple deposition chambers jointly deposit on a carrier, so that the carrier stays in the deposition chamber for a short time, and the front and rear end loading and unloading and pretreatment time are relatively short. Therefore, multiple pretreatment chambers need to be set up to reduce the pretreatment time.

[0053] The one-stop process chamber designed in this embodiment is a long-cycle deposition structure, that is, each deposition chamber independently deposits a carrier, and multiple carriers are deposited simultaneously, thereby reserving a relatively long auxiliary time for front-end and back-end loading and unloading and preprocessing, so that the functions of the prior art's sheet feeding chamber and preheating chamber, cooling chamber and sheet discharge chamber can be merged into a sheet feeding and preheating chamber 1 and a cooling and discharge chamber 3, respectively, reducing the number of chambers, shortening the production line length, reducing the land cost, and reducing the equipment processing and manufacturing cost and installation period.

[0054] The process chamber also uses a one-stop deposition structure instead of a multi-station deposition technique, eliminating gate valves between deposition chambers. Because the multiple deposition chambers in a one-stop process chamber are interconnected and share the same gas formula, there's no need to install a separate pump unit 25 in each chamber. Instead, the exhaust pipes from several deposition chambers can be connected in series to the same pump unit for evacuation and exhaust, reducing the number of pump units and saving costs. Eliminating gate valves between deposition chambers also reduces the time required for auxiliary processes in the process chamber, lowering equipment cycle time and increasing production capacity.

[0055] An isolation chamber 7 is provided between different process chambers to isolate the gas components between the different process chambers. Gas washing and vacuuming can be performed in the isolation chamber 7, thereby completing the deposition of different film layers on one line, integrating the equipment, making the entire line equipment more compact, and reducing the floor space.

[0056] Specifically, if Figure 3 、 Figure 4 As shown, the sheet loading and unloading stacking chamber 4 includes a chamber frame 41 , a chamber 42 , a plate carrier transmission mechanism 43 , a stacking lifting mechanism 44 and a vacuum generator 45 .

[0057] The carrier plate transmission mechanism 43 is disposed on the cavity 42 and is used to transport the carrier plate to the workstation of the stacking and lifting mechanism 44. Specifically, the carrier plate transmission mechanism 43 includes a transmission wheel 431 and a transmission drive 432. The transmission wheels 431 are rotatably disposed on both sides of the cavity 42, and the carrier plate is placed on the transmission wheels 431. The transmission drive 432 is fixed to the outside of the cavity 42 and is connected to the transmission wheels 431 for driving the transmission wheels 431 to rotate.

[0058] The stack lifting mechanism 44 is arranged in the film preheating chamber 1 so as to be movable up and down. The stack lifting mechanism 44 is provided with a plurality of support gaps 441 for placing carriers. A heating plate 5 or a cooling plate 6 is provided at the bottom of the support gaps 441. The support gaps 441, the heating plate 5, and the cooling plate 6 are provided with a clearance area 442 for avoiding the transfer wheels 431 of the carrier transmission mechanism 43. When the stack lifting mechanism 44 is lowered to the lowest point, the transfer wheels 431 are located above the uppermost support gaps 441. When the stack lifting mechanism 44 is raised to the highest point, the transfer wheels 431 are located below the lowermost support gaps 441. Specifically, the stack lifting mechanism 44 includes a lifting drive unit 443, an upper pull rod assembly 444, a guide rod assembly 445, and a carrier storage frame 446. One end of the guide rod assembly 445 is fixed to the upper or lower end of the cavity 42, and the other end passes through the carrier storage frame 446. The guide rod assembly 445 of this embodiment is disposed at the lower end of the cavity 42 .

[0059] The lower ends of the upper pull rod assembly 444 are connected to the upper end surface of the carrier storage frame 446 at multiple points. The upper ends are connected to the lifting drive unit 443, which drives the carrier storage frame 446 up and down along the guide rod assembly 445. The arrangement of the upper pull rod assembly 444 ensures more uniform force on the carrier storage frame 446. The support spacer 441 is located within the carrier storage frame 446.

[0060] The cavity 42 is fixed above the cavity frame 41 , and one end of the vacuum generator 45 is connected to the bottom of the cavity 42 , and the other end is connected to the outside.

[0061] When in use, first lower the carrier storage frame 446 to the lowest point, and the carrier transmission mechanism 43 transports the carrier to the top of the carrier storage frame 446. The carrier storage frame 446 moves upward under the drive of the lifting drive unit 443, lifts the carrier, and stores it in the support interval 441 until several support intervals 441 are filled with carriers, and then close the gate valve for preheating. After preheating, the carrier storage frame 446 is lowered in turn, and the carriers are transported in batches to each deposition chamber of the process chamber for independent deposition through the carrier transmission mechanism 43. After deposition is completed, the same principle is used to cool the carrier in the cooling and discharging chamber 3 by raising and lowering the carrier storage frame 446, and then transport it to the next process.

[0062] This embodiment also discloses a coating process, which uses the above-mentioned high-throughput PECVD system suitable for coating multiple film layers, including the following steps:

[0063] S1. Feeding and preheating: The silicon wafers are placed on the carrier by the loader and stacked into multiple layers. The first gate valve 81 leading to the wafer feeding preheating chamber 1 is opened, and the multi-layer carrier is transported to the stacking lifting mechanism 44 of the wafer feeding preheating chamber 1. The first gate valve 81 is closed, and the wafer feeding preheating chamber 1 is then purged and evacuated until the vacuum degree and process gas are consistent with those of the i-layer coating process chamber 21. At the same time, the silicon wafers on the carrier are heated.

[0064] S2. Coating: Open the second gate valve 82 leading to the i-layer coating process chamber 21, and continuously transport the heated multi-layer carrier layer by layer to the bottom of each deposition chamber of the i-layer coating process chamber 21 through the stack lifting mechanism 44; close the second gate valve 82, purge and break the vacuum of the film preheating chamber 1, remove the process gas and break the vacuum to room pressure, and at the same time lift each layer of the carrier in the i-layer coating process chamber 21 to the corresponding deposition chamber for coating the first film layer, and at the same time purge and evacuate the isolation chamber 7 until the vacuum degree and process gas in the isolation chamber 7 are consistent with those of the i-layer coating process chamber 21.

[0065] After the first film layer is plated, the third gate valve 83 leading to the isolation chamber 7 and the second gate valve 82 leading to the i-layer plating process chamber 21 are opened, and the carrier plates plated with the first film layer are stacked on the stacking lifting mechanism 44 in the isolation chamber 7 through the stacking lifting mechanism 44, and the carrier plates on the sheet preheating chamber 1 are simultaneously transported to the i-layer plating process chamber 21; the third gate valve 83 and the second gate valve 82 are closed, and the isolation chamber 7 is washed and vacuumed until the vacuum degree and process gas in the isolation chamber 7 are consistent with those in the p-layer plating process chamber 22; at the same time, the i-layer plating process chamber 21 is subjected to deposition electroplating.

[0066] Open the fourth gate valve 84 leading to the p-layer plating process chamber 22, and continuously transport the multi-layer carrier in the isolation chamber 7 layer by layer to the bottom of each deposition chamber in the p-layer plating process chamber 22 through the stack lifting mechanism 44; close the fourth gate valve 84, purge and evacuate the isolation chamber 7 until the vacuum degree and process gas in the isolation chamber 7 are consistent with those in the i-layer plating process chamber 21, and at the same time lift each layer of carrier in the p-layer plating process chamber 22 to the corresponding deposition chamber for plating the second film layer.

[0067] S3, cooling and discharging: wash and evacuate the cooling discharge chamber 3 until the vacuum degree and process gas are consistent with those of the p-layer coating process chamber 22, then open the fifth gate valve 85 leading to the cooling discharge chamber 3, and stack the carrier plates with the film layer through the stack lifting mechanism 44 to stack each layer of carrier plates on the stack lifting mechanism 44 in the cooling discharge chamber 3; close the fifth gate valve 85, wash and remove the process gas from the cooling discharge chamber 3, cool and break the vacuum to room pressure; then open the sixth gate valve 86 leading to the unloader, and transport the multi-layer carrier plates to the unloader in batches, close the sixth gate valve 86, wash and evacuate the cooling discharge chamber 3 until the vacuum degree and process gas are consistent with those of the last process chamber, and at the same time unload the silicon wafers through the unloader.

[0068] When the carrier from wafer inlet preheating chamber 1 is delivered to i-layer coating chamber 21 and the gate valve closes, deposition begins in i-layer coating chamber 21: the loader loads the carrier with silicon wafers and waits for the carrier to be transferred to the inlet preheating chamber. Wafer inlet preheating chamber 1 simultaneously undergoes purge and vacuum rupture, then receives the carrier from the loader, purges, evacuates, and heats, waiting for transfer to i-layer coating chamber 21. Isolation chamber 7 also undergoes purge and vacuum rupture, then delivers the carrier to p-layer coating chamber 22, purges and evacuates, and then waits for the carrier from i-layer coating chamber 21.

[0069] When the carrier in isolation chamber 7 is delivered to p-layer coating chamber 22 and the gate valve is closed, deposition of the coating film in p-layer coating chamber 22 begins: The wafer discharge chamber 3 is cooled and simultaneously purged, vacuum-broken, and cooled. The carrier is then delivered to the unloader, which then purifies, vacuum-broken, and waits to receive the carrier from p-layer coating chamber 22. The unloader removes the silicon wafer from the carrier and waits to receive the carrier from cooled wafer discharge chamber 3.

[0070] In summary, the present invention can not only shorten the length of the production line, save equipment and land costs, but also improve production efficiency.

[0071] The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited thereto. Within the technical concept of the present invention, various simple variations of the technical solution of the present invention may be made, including combining the various technical features in any other appropriate manner. These simple variations and combinations should also be considered as disclosed in the present invention and fall within the scope of protection of the present invention.

Claims

1. A high-capacity PECVD system suitable for coating multiple film layers, characterized by: It includes a film inlet preheating chamber, a one-stop coating module and a cooling film outlet chamber which are connected in sequence through gate valves; The sheet inlet and preheating chamber includes a sheet inlet and outlet stacking chamber and a heating plate, and the sheet cooling chamber includes a sheet inlet and outlet stacking chamber and a cooling plate; The one-stop coating module includes an isolation chamber and several process chambers for coating different film layers. The isolation chamber is arranged between two adjacent process chambers through a gate valve. Each process chamber includes several interconnected and independently working deposition chambers. The sheet inlet and outlet stacking cavity and the isolation cavity are both provided with stacking lifting mechanisms.

2. The high-throughput PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: There are two types of process chambers, namely an i-layer plating process chamber and a p-layer plating process chamber.

3. The high-throughput PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: The number of deposition chambers in the i-layer plating process chamber is equal to the number of deposition chambers in the p-layer plating process chamber.

4. The high-throughput PECVD system suitable for coating multiple film layers according to claim 3, characterized in that: The number of deposition chambers of the i-layer plating process chamber and the number of deposition chambers of the p-layer plating process chamber are both four.

5. The high-throughput PECVD system suitable for depositing multiple film layers according to claim 1, characterized in that: The one-stop coating module further includes a plurality of evacuation pump groups, and one evacuation pump group is connected to one or more deposition chambers in the same process chamber.

6. The high-throughput PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: The film inlet and outlet stacking chamber includes a chamber, a carrier plate transmission mechanism, a stack lifting mechanism and a vacuum generator; the carrier plate transmission mechanism is arranged on both sides of the chamber; the stack lifting mechanism can be moved up and down in the film inlet preheating chamber, and a plurality of support intervals for placing carrier plates are provided on the stack lifting mechanism, and a heating plate or a cooling plate is provided at the bottom of the support interval, and a avoidance area for avoiding the carrier plate transmission mechanism is provided on the support interval, the heating plate and the cooling plate; when the stack lifting mechanism is lowered to the lowest point, the carrier plate transmission mechanism is located above the uppermost support interval, and when the stack lifting mechanism is raised to the highest point, the carrier plate transmission mechanism is located below the lowermost support interval; the vacuum generator is arranged outside the chamber.

7. The high-throughput PECVD system suitable for coating multiple film layers according to claim 6, characterized in that: The carrier plate transmission mechanism includes a transmission wheel and a transmission drive member. The transmission wheel is rotatably arranged on both sides of the cavity, the carrier plate is placed on the transmission wheel, and the transmission drive member is fixed outside the cavity and is dynamically connected to the transmission wheel for driving the transmission wheel to rotate.

8. The high-throughput PECVD system suitable for depositing multiple film layers according to claim 6, characterized in that: The stack lifting mechanism includes a lifting drive unit, a guide rod group and a carrier storage frame; one end of the guide rod group is fixed to the upper end or the lower end of the cavity, and the other end passes through the carrier storage frame; the lifting drive unit is connected to the carrier storage frame, and is used to drive the carrier storage frame to move up and down along the guide rod group; the support gap is located in the carrier storage frame.

9. The high-throughput PECVD system suitable for depositing multiple film layers according to claim 6, characterized in that: The sheet inlet and outlet stacking chamber further comprises a chamber frame, the chamber is fixed above the chamber frame, one end of the vacuum generator is connected to the bottom of the chamber, and the other end is connected to the outside.

10. The high-throughput PECVD system suitable for depositing multiple film layers according to claim 6, characterized in that: The stack lifting mechanism further comprises an upper pull rod group, the lower ends of which are respectively connected to the upper end surface of the carrier plate storage frame at multiple points, and the upper ends of which are connected to the lifting drive unit.

11. The high-throughput PECVD system suitable for depositing multiple film layers according to claim 6, characterized in that: The isolation cavity is the inlet and outlet sheet stacking cavity.

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