Heating structure and semiconductor processing equipment

Abstract

The utility model discloses a heating structure and a semiconductor processing device, the heating structure is applied to the semiconductor processing device, the semiconductor processing device comprises a reaction chamber and a pedestal assembly, the pedestal assembly is arranged in the reaction chamber and is used for bearing a substrate, the heating structure comprises a first heating assembly, a second heating assembly and a third heating assembly, the first heating assembly is arranged in the reaction chamber and surrounds the pedestal assembly; the second heating assembly is arranged in the reaction cavity; the second heating assembly is a dispersed light source and is arranged around the base assembly; the vertical position or angle of the second heating assembly is adjusted such that the radiation area of the second heating assembly varies from the edge to the center of the substrate. According to the utility model, the heating uniformity and the heating efficiency of the substrate are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a heating structure and semiconductor processing equipment. Background Art

[0002] In the semiconductor manufacturing process, material processing (e.g., etching or deposition) and heat treatment are two important steps. Conventional processing equipment typically performs these two steps separately, which not only reduces production efficiency but also increases manufacturing costs. Conventional heat treatment systems typically employ heat radiation sources positioned on the inner sidewalls of the corresponding reaction chambers to heat treated substrates. However, because the lamp groups of conventional heat radiation sources are positioned at the edges of the reaction chambers, closer to the substrate edges and farther from the substrate center, and because the optical path lengths of the lamp groups vary, the substrate edge regions are closer to the lamp groups. This results in higher temperatures at the edge of the substrate, while the center region is farther from the lamp groups, resulting in lower temperatures. This leads to poor heating uniformity. Furthermore, the fixed, unadjustable arrangement of conventional lamp groups further contributes to uneven heating of the substrate. Furthermore, poor substrate heating uniformity or excessively rapid heating can cause deformation of the substrate, which can easily lead to slippage during movement, resulting in a low heating rate. Consequently, conventional heat radiation sources also suffer from low thermal efficiency, impacting product quality. Utility Model Content

[0003] The purpose of the utility model is to provide a heating structure and semiconductor processing equipment to improve the heating uniformity and heating efficiency of a substrate.

[0004] In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

[0005] A heating structure is used in semiconductor processing equipment. The semiconductor processing equipment includes a reaction chamber and a base assembly. The base assembly is located in the reaction chamber and is used to support a substrate. The heating structure includes: a first heating assembly, which is arranged in the reaction chamber and surrounds the base assembly; a second heating assembly, which is arranged in the reaction chamber; the second heating assembly is a dispersed light source and is arranged around the base assembly; the vertical position or angle of the second heating assembly is adjusted so that the radiation area of ​​the second heating assembly varies between the edge and the center of the substrate.

[0006] Optionally, the first heating assembly includes: a first reflecting plate and a first radiation lamp group; the first reflecting plate is arranged on the inner wall of the reaction chamber and surrounds the first radiation lamp group, and is used to reflect the radiation energy of the first radiation lamp group to the substrate.

[0007] Optionally, the first radiation lamp group includes a plurality of first radiation lamp tubes, and the plurality of first radiation lamp tubes are arranged in a ring shape.

[0008] Optionally, each of the first radiation lamp tubes is in an arc shape, a polygon shape or a dot matrix shape.

[0009] Optionally, each of the first radiation lamps is connected to a controller to independently control the power of each of the first radiation lamps.

[0010] Optionally, the second heating assembly includes: a fixed support portion and a second radiation lamp group, the fixed support portion is arranged close to the inner wall of the reaction chamber, and is used to support and adjust the position of the second radiation lamp group in the vertical direction; the second radiation lamp group is hinged to the fixed support portion to adjust the angle of the second radiation lamp group.

[0011] Optionally, the fixed support portion includes: a fixing plate, one end of which is connected to the first heating assembly and the other end is suspended; the fixing plate is provided with a waist hole extending in a vertical direction; a hinged member, one end of which is connected to the waist hole and the other end is hingedly connected to the second radiation lamp assembly; the vertical position of the second radiation lamp assembly is adjusted by adjusting the connection position of the hinged member on the waist hole; and the angle of the second radiation lamp assembly is adjusted by adjusting the angle between the second radiation lamp assembly and the fixing plate.

[0012] Optionally, the fixed support portion includes: a magnetic fluid disposed on the wall of the reaction chamber for sealing the wall; a screw disposed through the magnetic fluid; a guide rail disposed inside the reaction chamber and connected to one end of the screw; a drive device disposed outside the reaction chamber and connected to the other end of the screw; a hinged portion, one end of which is movably connected to the guide rail and the other end of which is hinged to the second radiation lamp group. The drive device is used to drive the screw to rotate, and the screw converts the rotational motion into linear motion to drive the hinged portion to move vertically along the guide rail.

[0013] Optionally, the driving device is a motor.

[0014] Optionally, the second radiation lamp group includes at least one second radiation lamp tube, and the second radiation lamp tube is a point light source or a segmented arc light source.

[0015] Optionally, it also includes: a second reflecting plate, which is arranged on the fixed support part; the second reflecting plate is arranged around the second radiation lamp group; the second radiation lamp group is arranged on the reflecting surface of the second reflecting plate and moves synchronously with the second reflecting plate; the second reflecting plate is used to reflect the radiation energy generated by the second radiation lamp group to the back area of ​​the substrate.

[0016] On the other hand, the present invention further provides a semiconductor processing device, comprising the heating structure as described above.

[0017] Optionally, the apparatus further includes: a cover ring disposed on the top surface of the first reflector and extending radially toward the central axis of the reaction chamber. A substrate support surface is provided on the top surface of the base assembly. A shield ring is disposed on the edge of the base assembly and surrounds the substrate support surface. During a substrate processing process, the base assembly is raised, and the shield ring engages with the cover ring.

[0018] Optionally, the method further comprises: a plurality of lifting pins arranged through the substrate support surface. When the substrate is subjected to a heat treatment process, the lifting pins rise to lift the substrate so that the radiation energy of the heating assembly is irradiated on the back area of ​​the substrate.

[0019] Optionally, it further includes: a reflective layer, wherein the reflective layer is formed on any one of the top surface of the shielding ring, the substrate supporting surface and the lower surface of the cover ring, or a combination thereof.

[0020] The utility model has at least one of the following technical effects:

[0021] The heating structure provided by the present invention adjusts the vertical position or angle of the second heating component so that the radiation area of ​​the second heating component varies between the edge and the center of the substrate. This can, on the one hand, compensate for the heating uniformity of the first heating component, that is, improve the heating uniformity of the substrate; on the other hand, it can increase the heating rate of the substrate without deforming the substrate.

[0022] The provision of the first reflective plate can improve the heat utilization rate of the first heating component.

[0023] The power of the plurality of first radiation lamps is independently controlled, so as to facilitate controlling the heating uniformity of the substrate.

[0024] The provision of the second reflective plate can improve the heat utilization rate of the second heating component.

[0025] This utility model improves the substrate heating method and achieves a significant reduction in energy consumption. This reduction not only helps companies reduce operating costs, but also reduces carbon emissions and other pollutants that may be generated during the energy production process, which has positive significance for environmental protection. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic structural diagram of a semiconductor processing device provided by one embodiment of the present invention;

[0027] Figure 2A schematic structural diagram of a heating structure provided in one embodiment of the present utility model;

[0028] Figure 3 A schematic structural diagram of a first heating lamp group in a heating structure provided by an embodiment of the present utility model;

[0029] Figure 4a and Figure 4b These are schematic diagrams of the structure of the fixing structure of the second heating lamp group in the heating structure provided by one embodiment of the present utility model;

[0030] Figure 5 This is a structural schematic diagram of the fixing structure of the second heating lamp group in the heating structure provided by another embodiment of the present utility model. DETAILED DESCRIPTION

[0031] The following is a further detailed description of a heating structure and semiconductor processing equipment proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention, so they have no technical substantive significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0032] like Figure 1 As shown, this embodiment provides a semiconductor processing device, including a reaction chamber 400 and a base assembly 100. The base assembly 100 is located in the reaction chamber 400 and is used to support a substrate W. A heating structure is used to perform heat treatment on the substrate W.

[0033] Combine Figure 1 and Figure 2As shown, the heating structure includes: a first heating assembly 200, which is disposed within the reaction chamber 400 and surrounds the susceptor assembly 100. The first heating assembly 200 can be used to radiatively heat the substrate W; a second heating assembly 300, which is disposed within the reaction chamber 400 and below the first heating assembly 200. The second heating assembly 300 is a dispersed light source and surrounds the susceptor assembly 100. The vertical position or angle of the second heating assembly 300 can be adjusted to vary the radiation area of ​​the second heating assembly 300 from the edge to the center of the substrate W. In some embodiments, the second heating assembly 300 can also be disposed above the first heating assembly 200; alternatively, it is understood that the second heating assembly 300 can also be disposed on the sidewall of the reaction chamber 400, or a support structure can be provided on the bottom of the reaction chamber 400, on which the second heating assembly 300 is disposed.

[0034] The heating structure provided in this embodiment adjusts the vertical position or angle of the second heating component so that the radiation area of ​​the second heating component varies between the edge and the center of the substrate. This can, on the one hand, compensate for the heating uniformity of the first heating component, that is, improve the heating uniformity of the substrate; on the other hand, it can increase the heating rate of the substrate without deforming the substrate.

[0035] The semiconductor processing equipment provided in this embodiment can improve the heating efficiency of the substrate through the heating structure, thereby increasing the equipment production capacity.

[0036] This embodiment improves the substrate heating method and significantly reduces energy consumption. This reduction not only helps companies reduce operating costs, but also reduces carbon emissions and other pollutants that may be generated during energy production, which has positive significance for environmental protection.

[0037] Please continue to refer to Figure 1 and Figure 2 As shown, in this embodiment, the first heating component 200 includes: a first reflecting plate 203 and a first radiation lamp group 201; the first reflecting plate 203 is arranged on the inner wall of the reaction chamber 400, surrounding the first radiation lamp group 201, and is used to reflect the radiation energy of the first radiation lamp group 201 to the substrate W.

[0038] The surface of the first reflective plate 203 facing the first radiation lamp group 201 is a reflective surface, which is shaped to reflect the radiation light from the first heating assembly 200 to the back side of the substrate W. The reflective surface can have any desired shape, such as an overall annular curved shape.

[0039] It can be seen from this that the provision of the first reflective plate 203 can improve the heat utilization rate of the first heating component 201 .

[0040] In some embodiments, as Figure 3 As shown, the first radiation lamp group 201 includes a plurality of first radiation lamp tubes 2011, which are arranged in a ring. In this embodiment, the number of the first radiation lamp tubes 2011 is 3 or more, preferably 4.

[0041] In this embodiment or some other embodiments, each of the first radiation lamp tubes 2011 is in an arc shape, a polygon shape, or a dot matrix shape. In some other embodiments, the first radiation lamp group 201 can also be a ring lamp tube.

[0042] In this embodiment, each of the first radiation lamps 2011 is connected to a controller ( Figure 3 (not shown) to independently control the power of each of the first radiation lamps 2011. The power of the plurality of first radiation lamps 2011 is independently controlled, so as to facilitate controlling the heating uniformity of the substrate W.

[0043] Please continue to refer to Figure 2 As shown, the second heating assembly 300 includes a fixed support portion 301 disposed near the inner wall of the reaction chamber 400, which is used to support and adjust the vertical position of the second radiation lamp group 302. The second radiation lamp group 302 is hingedly connected to the fixed support portion 301 to adjust the angle of the second radiation lamp group 302. In other embodiments, the vertical position and angle of the second radiation lamp group 302 can be adjusted through other commonly used mechanical connection methods, and the present invention is not limited thereto.

[0044] It can be understood that the closer the second radiation lamp group 302 is to the first heating assembly 200 in the vertical direction, the closer its radiation area is to the edge of the substrate W. Conversely, the closer it is to the center of the substrate W.

[0045] In this embodiment, combined with Figure 2 and Figure 4a As shown, the fixed support portion 301 includes: a fixed plate 3011, one end of the fixed plate 3011 is connected to the first heating component 200, and the other end is suspended; a waist hole 3012 is provided on the fixed plate 3011, and the waist hole 3012 extends in the vertical direction. Figure 4aThe hinged member (not shown) has one end connected to the waist hole 3012 and the other end hinged to the second radiation lamp assembly 302. The vertical position of the second radiation lamp assembly 302 can be adjusted by adjusting the connection position of the hinged member on the waist hole 3012. The angle of the second radiation lamp assembly 302 can be adjusted by adjusting the angle between the second radiation lamp assembly 302 and the fixing plate 3011.

[0046] As a result, the radiation area of ​​the second radiation lamp group 302 varies between the edge and the center of the substrate, which can, on the one hand, compensate for the heating uniformity of the first heating component, that is, improve the heating uniformity of the substrate, and on the other hand, increase the heating rate of the substrate without deforming the substrate.

[0047] In some other embodiments, such as Figure 4b As shown, the number of the waist holes 3012 can be multiple, and the multiple waist holes 3012 are arranged at intervals along the vertical direction. By selecting the corresponding waist hole 3012 to connect with the hinge, the position of the second radiation lamp group 302 in the vertical direction can be adjusted.

[0048] In some other embodiments, in order to realize automatic control of the second radiation lamp group 302, such as Figure 5 As shown, the fixed support portion 301 includes a magnetic fluid 303 disposed on the wall of the reaction chamber 400 for sealing the wall. A screw 304 is disposed through the magnetic fluid 303. A guide rail 306 is disposed within the reaction chamber 400 and connected to one end of the screw 304. A drive device 305 is disposed outside the reaction chamber 400 and connected to the other end of the screw 304. A hinged portion (not shown) has one end movably connected to the guide rail 306 and the other end hinged to the second radiation lamp assembly 302. The drive device 305 is used to rotate the screw 304, which converts the rotational motion into linear motion to drive the hinged portion to move vertically along the guide rail 306. This allows for real-time automatic vertical control of the second radiation lamp assembly 302. The second radiation lamp group 302 is hinged to the guide rail 306 through a hinge part, so that the angle of the second radiation lamp group 302 can be adjusted to achieve the purpose of adjusting the radiation area of ​​the second radiation lamp group 302 to change between the edge and the center of the substrate. On the one hand, it can compensate for the heating uniformity of the first heating component, that is, improve the heating uniformity of the substrate, and on the other hand, it can increase the heating rate of the substrate without deforming the substrate.

[0049] In this embodiment, the driving device 305 is a motor, which makes the device simple, reduces equipment cost, is easy to operate, and improves substrate processing efficiency.

[0050] Preferably, the angle adjustment of the second radiation lamp group 302 mentioned in this embodiment can be to adjust the light emission direction of the second radiation lamp group 302 upward from the horizontal direction to irradiate the area on the back side of the substrate W that needs to be temperature adjusted.

[0051] In this embodiment, the second radiation lamp assembly 302 includes at least one second radiation lamp tube, which is a point light source or a segmented arc light source. Preferably, the point light source has a more concentrated illumination area, thereby enabling more precise adjustment of the heating area of ​​the substrate, but the present invention is not limited to this.

[0052] In this embodiment or some other embodiments, the second heating assembly 300 further includes: a second reflecting plate ( Figure 2 (not shown), which is arranged on the fixed support part 301; the second reflecting plate is arranged around the second radiation lamp group 302; the second radiation lamp group 302 is arranged on the reflecting surface of the second reflecting plate, and moves synchronously with the second reflecting plate; the second reflecting plate is used to reflect the radiation energy generated by the second radiation lamp group 302 to the back area of ​​the substrate W, so as to improve the heating uniformity and heating effect of the substrate.

[0053] Please continue to refer to Figure 1 and Figure 2 As shown, in this embodiment, the semiconductor processing equipment further includes: a cover ring 202, which is arranged on the top surface of the first reflective plate 203 and extends radially toward the central axis of the reaction chamber 400. A substrate supporting surface is provided on the top surface of the base assembly 100. A shield ring 102 is arranged on the edge of the base assembly 100 and surrounds the substrate supporting surface. When the substrate processing process is performed, the base assembly 100 rises and the shield ring 102 engages with the cover ring 202. This is used to prevent reaction gas from entering the area below the shield ring 102 and contaminating the base assembly 100.

[0054] In this embodiment, the semiconductor processing apparatus further comprises: a plurality of lift pins 101 disposed throughout the substrate support surface. During the heat treatment process of the substrate W, the lift pins 101 rise to lift the substrate W so that the radiant energy of the heating assembly is irradiated onto the back surface of the substrate W.

[0055] In this embodiment, the semiconductor processing equipment further includes: a reflective layer ( Figure 2 (not shown), the reflective layer is formed on any one of the top surface of the shadow ring 102, the substrate support surface, and the lower surface of the cover ring 201, or a combination thereof. This can further improve the heating uniformity of the substrate and the heat utilization rate of the heating assembly.

[0056] It is understood that the first radiation lamp group 201 and the second radiation lamp group 302 can be heat lamps, halogen lamps, arc lamps, and coaxial microwave or millimeter wave sources. The first radiation lamp group 201 and the second radiation lamp group 302 can, for example, generate radiation at wavelengths ranging from infrared to ultraviolet, or microwave, millimeter wave, megahertz wave, submillimeter wave, or far infrared sources.

[0057] The semiconductor processing apparatus is, for example, a physical vapor deposition (PVD) apparatus. In this embodiment, the top cover 401 of the reaction chamber 400 includes a sputtering target, a magnetron, and a gas feed system known in the art. In alternative embodiments, the semiconductor processing apparatus is, for example, a chemical vapor deposition (CVD) apparatus, a plasma-enhanced chemical vapor deposition (PECVD) apparatus, or an etching apparatus. The reaction chamber 400 may include a showerhead or showerhead electrode disposed in the top cover 401, as known in the art.

[0058] The reaction chamber 400 of the semiconductor processing equipment is a dual-function chamber that can perform material processing (ie, deposition, etching, and / or implantation) and thermal processing on a substrate.

[0059] The semiconductor processing apparatus processes a substrate, including placing a substrate W on a substrate support surface. The substrate W is positioned at a material processing position by a susceptor assembly, and material processing is performed on the top surface of the substrate. The substrate W is separated from the substrate support surface by lift pins 101, exposing the back surface of the substrate W, opposite the top surface, to a heating structure for thermal processing. The entire method can be repeated any desired number of times to perform cyclic material / heat processing within the reaction chamber. Furthermore, if desired, the material and thermal operations can be independently repeated the same or different times.

[0060] To sum up, the semiconductor processing equipment provided in this embodiment is provided with a heating structure. By adjusting the vertical position or angle of the second heating component in the heating structure, the radiation area of ​​the second heating component varies between the edge and the center of the substrate. Therefore, on the one hand, it can make up for the heating uniformity of the first heating component, that is, improve the heating uniformity of the substrate; on the other hand, it can increase the heating rate of the substrate without deformation of the substrate, thereby improving the heating efficiency of the substrate and improving the production capacity of the equipment.

[0061] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0062] In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "up," "down," "vertical," "horizontal," "top," "bottom," "inside," "outside," "axial," "radial," "circumferential," and the like, indicating positions or location relationships, are based on the positions or location relationships shown in the accompanying drawings and are intended solely to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0063] In the description of this utility model, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0064] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0065] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A heating structure, which is used in a semiconductor processing device, wherein the semiconductor processing device includes a reaction chamber and a base assembly, wherein the base assembly is located in the reaction chamber and is used to support a substrate, characterized in that: The heating structure comprises: a first heating assembly disposed in the reaction chamber and surrounding the base assembly; a second heating component disposed in the reaction chamber; the second heating component is a dispersed light source and is disposed around the base component; The vertical position or angle of the second heating assembly is adjusted so that the radiation area of ​​the second heating assembly varies from the edge to the center of the substrate.

2. The heating structure according to claim 1, wherein The first heating assembly includes: a first reflecting plate and a first radiation lamp group; The first reflection plate is arranged on the inner wall of the reaction chamber and surrounds the first radiation lamp group, and is used for reflecting the radiation energy of the first radiation lamp group to the substrate.

3. The heating structure according to claim 2, wherein: The first radiation lamp group includes a plurality of first radiation lamp tubes, and the plurality of first radiation lamp tubes are arranged in a ring shape.

4. The heating structure according to claim 3, wherein: Each of the first radiation lamps is in an arc shape, a polygon shape or a dot matrix shape.

5. The heating structure according to claim 3, wherein: Each of the first radiation lamps is connected to a controller to independently control the power of each of the first radiation lamps.

6. The heating structure according to claim 1, wherein: The second heating assembly includes: a fixed support portion and a second radiation lamp group, wherein the fixed support portion is arranged near the inner side wall of the reaction chamber and is used to support and adjust the position of the second radiation lamp group in the vertical direction; The second radiation lamp group is hinged to the fixed support portion to adjust the angle of the second radiation lamp group.

7. The heating structure according to claim 6, wherein: The fixed support portion includes: A fixing plate, one end of which is connected to the first heating component and the other end of which is suspended in the air; a waist hole is formed on the fixing plate, and the waist hole extends in a vertical direction; A hinged member, one end of which is connected to the waist hole and the other end of which is hinged to the second radiation lamp group; the vertical position of the second radiation lamp group is adjusted by adjusting the connection position of the hinged member on the waist hole; The angle between the second radiation lamp group and the fixing plate is adjusted to adjust the angle of the second radiation lamp group.

8. The heating structure according to claim 6, wherein: The fixed support portion includes: A magnetic fluid is provided on the cavity wall of the reaction cavity and is used to seal the cavity wall; a screw rod extending through the magnetic fluid arrangement; a guide rail, which is arranged inside the reaction chamber and connected to one end of the lead screw; a driving device, which is arranged outside the reaction chamber and connected to the other end of the screw; a hinge portion, one end of which is movably connected to the guide rail and the other end of which is hinged to the second radiation lamp group; The driving device is used to drive the screw to rotate, and the screw converts the rotational motion into linear motion to drive the hinged portion to move in the vertical direction along the guide rail.

9. The heating structure according to claim 8, wherein: The driving device is a motor.

10. The heating structure according to claim 6, wherein: The second radiation lamp group includes at least one second radiation lamp tube, and the second radiation lamp tube is a point light source or a segmented arc light source.

11. The heating structure according to claim 6, wherein: Also includes: a second reflective plate, which is disposed on the fixed support portion; The second reflective plate is arranged around the second radiation lamp group; The second radiation lamp group is arranged on the reflecting surface of the second reflecting plate and moves synchronously with the second reflecting plate; The second reflecting plate is used to reflect the radiation energy generated by the second radiation lamp group to the back area of ​​the substrate.

12. A semiconductor processing device, characterized in that: The heating structure comprises the heating structure according to any one of claims 1 to 11.

13. The semiconductor processing equipment according to claim 12, wherein Also includes: a cover ring, which is disposed on the top surface of the first reflective plate and extends along the radial direction of the reaction chamber toward the central axis of the reaction chamber; A substrate supporting surface is provided on the top surface of the base assembly; a shielding ring disposed on an edge of the base assembly and surrounding the substrate supporting surface; During a substrate processing process, the base assembly is raised and the shadow ring is engaged with the cover ring.

14. The semiconductor processing equipment according to claim 13, wherein Also includes: A plurality of lifting pins are arranged through the substrate supporting surface; When the substrate is subjected to a heat treatment process, the lifting pins rise to lift the substrate so that the radiation energy of the heating component can be irradiated on the back area of ​​the substrate.

15. The semiconductor processing equipment according to claim 14, wherein Also includes: A reflective layer is formed on any one of the top surface of the shadow ring, the substrate supporting surface, and the lower surface of the cover ring, or a combination thereof.

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