Package structure
By using the design of electroplated copper layers and optical waveguide adhesive layers in the SiPh packaging structure, optical and electrical signals are directly transmitted, solving the problems of increased thickness and high costs caused by multi-layer rewiring, and achieving higher yields and lower manufacturing costs.
Patent Information
- Application Number
- CN202422608275.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-28
- Publication Date
- 2025-09-09
- Estimated Expiration
- 2034-10-28
AI Technical Summary
In existing technologies, the transmission of optical and electrical signals in SiPh applications requires conversion into electrical signals through multiple redistribution layers, resulting in increased overall thickness of the packaging structure, complex process technology, long production cycles, low yields, and high costs.
An electroplated copper layer is used as the medium to connect the upper and lower optical pads to form a through optical channel, and the substrate gap is filled with an optical waveguide adhesive layer, replacing the multi-layer redistribution layer and bonding wire process to achieve direct transmission of optical and electrical signals.
The thickness of the packaging structure is reduced, the manufacturing process is simplified, the yield is improved and the cost is reduced, while the optical signal transmission loss is reduced.
Smart Images
Figure CN223321271U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor packaging technology, and in particular to a packaging structure. Background Art
[0002] In current SiPh (Silicon Photonics) application technology, photons and electrons are transmitted differently. Existing techniques typically convert both optical and electrical signals into electrical signals before transmission. This process requires multiple layers of redistribution. However, these layers inevitably increase the overall thickness of the package structure, requiring more complex manufacturing processes and longer production cycles. This results in lower package yields and higher overall costs. Utility Model Content
[0003] The present application proposes a packaging structure.
[0004] In a first aspect, the present application provides a packaging structure, comprising: an upper substrate comprising an upper optical pad; a lower substrate comprising a lower optical pad opposite to the upper optical pad; an electroplated copper layer configured to electrically connect the upper optical pad and the lower optical pad, the electroplated copper layer comprising an optical channel, the optical channel being configured to penetrate and connect the upper optical pad and the lower optical pad, the sidewalls of the optical channel being smooth and free of protrusions; and an optical waveguide adhesive layer filling the space between the upper substrate and the lower substrate.
[0005] In some optional embodiments, the inner sidewall of the electroplated copper layer completely surrounds the optical channel.
[0006] In some optional embodiments, in a top view direction, the electroplated copper layer and the optical channel are arranged in concentric circles.
[0007] In some optional embodiments, the upper optical spacer protrudes from the upper substrate.
[0008] In some optional embodiments, the packaging structure further includes:
[0009] a first seed layer disposed on the upper optical pad;
[0010] The second seed layer is disposed on the lower optical pad.
[0011] In some optional embodiments, the second seed layer extends along the surface of the lower optical pad to the surface of the lower substrate.
[0012] In some optional embodiments, the horizontal width of the second seed layer is equal to the horizontal width of the electroplated copper layer.
[0013] In some optional embodiments, the horizontal width of the first seed layer is smaller than the horizontal width of the electroplated copper layer.
[0014] In some optional embodiments, the first seed layer exposes the upper surface of the electroplated copper layer in the optical channel.
[0015] In some optional embodiments, two adjacent electroplated copper layers are spaced apart, and the optical waveguide adhesive layer is filled in the space between the two adjacent electroplated copper layers.
[0016] In order to solve the problem in the prior art that the optical signal and the electrical signal are converted into electrical signals together and then transmitted through multiple layers of redistribution layers, resulting in an increase in the overall thickness of the packaging structure, and the complex process technology and long production cycle resulting in low yield of the packaging structure and high overall cost, the present application proposes a packaging structure. By setting an electroplated copper layer, an optical channel is formed through the electroplated copper layer and the inner hole part of the electroplated copper layer to transmit electrical signals and optical signals. This can replace the current multi-layer redistribution layer and bonding wire process, reduce the thickness of the packaging structure, and simplify the process technology, thereby improving the yield of the packaging structure and reducing costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Other features, objects and advantages of the present application will become more apparent upon reading the detailed description of non-limiting embodiments made with reference to the following drawings:
[0018] Figure 1 It is a structural diagram of an existing packaging structure;
[0019] Figure 2 is a structural schematic diagram of an embodiment 2a of the packaging structure according to the present application;
[0020] Figure 3 yes Figure 2 A perspective view of the electroplated copper layer and optical channels;
[0021] Figure 4 It is a schematic diagram of the propagation of light signals in an optical channel;
[0022] Figure 5 yes Figure 2 A local enlarged view of the rectangular dotted area in ;
[0023] Figure 6 2 is a dimension marking diagram of an embodiment of a package structure 2a according to the present application;
[0024] Figure 7 is a structural schematic diagram of an embodiment 3a of the packaging structure according to the present application;
[0025] Figure 8is a structural schematic diagram of an embodiment 4a of the packaging structure according to the present application;
[0026] Figure 9 is a structural diagram of an embodiment 5a of the packaging structure according to the present application;
[0027] Figure 10 is a structural diagram of an embodiment 6a of the packaging structure according to the present application;
[0028] Figure 11 is a structural diagram of an embodiment 7a of the packaging structure according to the present application;
[0029] Figure 12 yes Figure 11 A local enlarged view of the rectangular dotted area;
[0030] Figure 13-Figure 31 It is a schematic diagram of the manufacturing steps of an embodiment 2a of the semiconductor packaging structure according to the present application.
[0031] Description of reference numerals / symbols:
[0032] 101-substrate; 102-rewiring layer; 103-optical sensor; 104-bonding wire; 105-conductive pad; 201-upper substrate; 202-lower substrate; 203-electroplated copper layer; 205-optical waveguide adhesive layer; 206-first seed layer; 207-second seed layer; 208-first metal layer; 209-second metal layer; 210-soldering layer; 211-waveguide film; 212-photoresist; 213-nozzle; 2011-upper optical pad; 2021-lower optical pad; 2031-optical channel. DETAILED DESCRIPTION
[0033] The following describes the specific embodiments of the present application in conjunction with the accompanying drawings and examples. Those skilled in the art will readily understand the technical problems solved by the present application and the technical effects produced by the present application through the contents of this specification. It should be understood that the specific embodiments described herein are merely for the purpose of explaining the relevant invention and are not intended to limit the invention. Furthermore, for ease of description, only portions relevant to the relevant invention are shown in the accompanying drawings.
[0034] It should be readily understood that the meanings of “on,” “over,” and “over…” in this application should be interpreted in the broadest sense, such that “on” not only means “directly on something,” but also means “on something” including intermediate components or layers therebetween.
[0035] Furthermore, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," and "upper" may be used herein to describe the relationship of one element or component to another element or component illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90° or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.
[0036] As used herein, the term "layer" refers to a portion of a material comprising an area having a certain thickness. A layer may extend over the entire underlying or superstructure, or may have an extent that is less than the extent of the underlying or superstructure. In addition, a layer may be an area of a homogeneous or inhomogeneous continuous structure, the thickness of which is less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically and / or along a tapered surface. A substrate may be a layer, may include one or more layers therein, and / or may have one or more layers thereon, above and / or below. A layer may include multiple layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.
[0037] As used herein, the term "substrate" refers to the material onto which subsequent material layers are added. The substrate itself can be patterned. The material added on top of the substrate can be patterned or can remain unpatterned. In addition, the substrate can include a variety of semiconductor materials, such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate can be made of a non-conductive material, such as glass, plastic, or sapphire wafer. Further alternatively, the substrate can have semiconductor devices or circuits formed therein.
[0038] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents recorded in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of this application. Therefore, they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose that can be achieved by this application. At the same time, terms such as "on", "first", "second" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of the implementation of this application. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of this application without substantially changing the technical content.
[0039] It should also be noted that the longitudinal section corresponding to the embodiment of the present application may be a section corresponding to the front view direction, the transverse section may be a section corresponding to the right view direction, and the horizontal section may be a section corresponding to the top view direction.
[0040] In addition, the embodiments and features of the embodiments of the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0041] refer to Figure 1 , Figure 1 It is a structural diagram of an existing packaging structure.
[0042] like Figure 1 As shown, the existing package structure includes a substrate 101, a redistribution layer 102, an optical sensor 103, bonding wires 104, and a conductive pad 105. A multi-layer redistribution layer 102 is disposed above the substrate 101, and the optical sensor 103 and the conductive pad 105 are disposed on the substrate. The optical sensor 103 and the conductive pad 105 are electrically connected to the redistribution layer 102. To achieve the transmission of optical and electrical signals, the optical and electrical signals need to be converted into electrical signals through the multi-layer redistribution layer 102 and the bonding wires 104 before being transmitted. However, the multi-layer redistribution inevitably increases the overall thickness of the package structure, and also requires a more complex process and a longer production cycle. This results in a lower yield of the package structure and a higher overall cost.
[0043] refer to Figure 2 , Figure 2 It is a structural diagram of an embodiment 2a of the packaging structure according to the present application.
[0044] like Figure 2 As shown, the packaging structure 2a of the present application includes an upper substrate 201, a lower substrate 202, an electroplated copper layer 203 and an optical waveguide adhesive layer 205, wherein the upper substrate 201 includes an upper optical pad 2011; the lower substrate 202 includes a lower optical pad 2021 opposite to the upper optical pad 2011; the electroplated copper layer 203 is configured to electrically connect the upper optical pad 2011 and the lower optical pad 2021, and the electroplated copper layer 203 includes an optical channel 2031, which is configured to penetrate and connect the upper optical pad 2011 and the lower optical pad 2021, and the sidewall of the optical channel 2031 is smooth and has no protrusions; the optical waveguide adhesive layer 205 fills the space between the upper substrate 201 and the lower substrate 202.
[0045] Here, the upper substrate (substrate) 201 may include organic and / or inorganic substances. The organic substances may be, for example, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (Poly-p-phenylene benzobisoxazole, PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.
[0046] Similarly, the lower substrate 202 may also include organic and / or inorganic substances. The organic substances may be, for example, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (Poly-p-phenylene benzobisoxazole, PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.
[0047] Here, the upper substrate 201 may include an upper optical pad 2011, which may be used to receive and transmit optical signals. The lower substrate 202 may include a lower optical pad 2021 opposite to the upper optical pad 2011, which may also be used to receive and transmit optical signals.
[0048] The electroplated copper layer 203 is configured to electrically connect the upper optical pad 2011 and the lower optical pad 2021. In this way, the electrical signal transmission between the upper substrate 201 and the lower substrate 202 can be achieved through the electroplated copper layer 203, which can replace the current multi-layer redistribution layer and bonding wire process, reduce the thickness of the packaging structure, and make the process simpler, thereby improving the yield of the packaging structure and reducing costs.
[0049] At the same time, the electroplated copper layer 203 is configured to include an optical channel 2031, and the optical channel 2031 is configured to connect the upper optical pad 2011 and the lower optical pad 2021, so that the optical signal can be transmitted in the optical channel 2031. Moreover, the optical signal is transmitted in the closed space composed of the electroplated copper layer 203, the upper optical pad 2011 and the lower optical pad 2021, which can minimize the loss of the optical signal during the transmission process.
[0050] refer to Figure 3 , Figure 3 yes Figure 2 A perspective view of the electroplated copper layer and optical channels.
[0051] like Figure 3 As shown, the electroplated copper layer 203 can be a ring-shaped structure, and the optical channel 2031 is located in the inner hole of the electroplated copper layer 203, that is, the hollow area within the ring-shaped structure. In this way, a closed optical transmission path can be formed through the optical pad 2011, the lower optical pad 2021 and the electroplated copper layer 203, so that the optical signal can be transmitted in the optical channel 2031, thereby realizing the formation of the optical channel 2031 in the inner hole part of the electroplated copper layer 203 for the transmission of optical signals, and at the same time, the transmission of electrical signals is carried out through the ring-shaped structure area of the electroplated copper layer 203.
[0052] Here, the sidewall of the optical channel 2031 is designed to be smooth and without protrusions, which can reduce the scattering and reflection loss of the optical signal during the propagation process, thereby improving the transmission efficiency of the optical signal.
[0053] The optical waveguide adhesive layer 205 fills the space between the upper substrate 201 and the lower substrate 202 . The optical waveguide adhesive layer 205 may have a high adhesive force to firmly bond the upper substrate 201 and the lower substrate 202 together, thereby improving the mechanical strength and stability of the packaging structure 2 a .
[0054] refer to Figure 3 and Figure 4 , Figure 4 It is a schematic diagram of the propagation of light signals in an optical channel.
[0055] In some optional embodiments, the inner sidewall of the electroplated copper layer 203 completely surrounds the optical channel 2031 .
[0056] In this way, a closed optical signal transmission path can be formed. Figure 4 , it can be seen that the propagation path of the optical signal inside the optical channel 2031 can also be avoided. At the same time, the optical signal can be prevented from being interfered with by the external environment and affecting the transmission quality of the optical signal.
[0057] In some optional embodiments, in the top view direction, the electroplated copper layer 203 and the optical channel 2031 are arranged in concentric circles.
[0058] Continue to refer Figure 3 The electroplated copper layer 203 may be a ring-shaped structure, and the optical channel 2031 is disposed in the inner hole of the electroplated copper layer 203 . Therefore, the electroplated copper layer 203 and the optical channel 2031 may be arranged in concentric circles in structure.
[0059] In some optional embodiments, the upper optical spacer 2011 protrudes from the upper substrate 201 .
[0060] The upper optical pad 2011 protruding from the upper substrate 201 can more easily connect with the electroplated copper layer 203, thereby forming a closed optical signal transmission path, reducing the probability of optical signals being emitted to the external environment, and reducing optical signal losses.
[0061] refer to Figure 2 and Figure 5 , Figure 5 yes Figure 2 A local enlarged view of the rectangular dotted area in .
[0062] In some optional embodiments, such as Figure 5 As shown, the package structure 2 a further includes a first seed layer 206 and a second seed layer 207 . The first seed layer 206 is disposed on the upper optical pad 2011 , and the second seed layer 207 is disposed on the lower optical pad 2021 .
[0063] In some optional embodiments, the second seed layer 207 extends along the surface of the lower optical pad 2021 to the surface of the lower substrate 202 .
[0064] Here, since in the photolithography and development process, it is necessary to first lay the second seed layer 207 on the lower optical pad 2021 and the lower substrate 202, and then form the electroplated copper layer 203 on the second seed layer 207 through the electroplating process, part of the electroplated copper layer 203 will extend to the side wall of the lower optical pad 2021 and contact the second seed layer 207 on the lower substrate 202. Therefore, after the subsequent etching process, the second seed layer 207 on the lower substrate 202 will not be etched away due to the electroplated copper layer 203, so that the second seed layer 207 can extend along the surface of the lower optical pad 2021 to the surface of the lower substrate 202.
[0065] Here, the first seed layer 206 disposed on the upper optical pad 2011 can be used to enhance the mechanical strength between the upper optical pad 2011 and the electroplated copper layer 203 and provide good electrical connection performance for achieving electrical signal transmission between the upper substrate 201 and the lower substrate 202 .
[0066] The second seed layer 207 disposed on the lower optical pad 2021 can also be used to enhance the mechanical strength between the lower optical pad 2021 and the electroplated copper layer 203 and provide good electrical connection performance for achieving electrical signal transmission between the upper substrate 201 and the lower substrate 202 .
[0067] In addition, the first seed layer 206 and the second seed layer 207 can also serve as a protective film to protect the upper optical pad 2011 and the lower optical pad 2021 from being corroded by environmental factors (such as moisture, oxygen, etc.).
[0068] In some optional embodiments, the horizontal width of the second seed layer 207 is equal to the width of the electroplated copper layer 203 .
[0069] Here, as mentioned above, due to the process technology, the metal layer located below the electroplated copper layer 203 will be retained, thereby forming a second seed layer 207. Therefore, the horizontal width of the second seed layer 207 can be equal to the horizontal width of the electroplated copper layer 203. The horizontal width of the second seed layer 207 is the same as the horizontal width of the electroplated copper layer 203, which can ensure that the entire electroplating area has good conductivity.
[0070] In some optional embodiments, the horizontal width of the first seed layer 206 is smaller than the width of the electroplated copper layer 203 .
[0071] Here, since it is not necessary to form the electroplated copper layer 203 on the upper optical pad 2011 , the horizontal width of the first seed layer 206 can be made smaller than the width of the electroplated copper layer 203 after the metal layer etching process.
[0072] In some optional embodiments, the first seed layer 206 exposes the upper surface of the electroplated copper layer 203 within the optical channel 2031 .
[0073] In some optional embodiments, continue to refer to Figure 5 The package structure 2 a further includes a first metal layer 208 and a second metal layer 209 , wherein the first metal layer 208 is disposed on the first seed layer 206 , and the second metal layer 209 is disposed on the second seed layer 207 .
[0074] In some optional embodiments, the electroplated copper layer 203 may be electrically connected to the upper optical pad 2011 and the lower optical pad 2021 through the first metal layer 208 and the second metal layer 209 .
[0075] Here, a first metal layer 208 is arranged on the first seed layer 206, and a second metal layer 209 is arranged on the second seed layer 207, so that the electroplated copper layer 203 can be electrically connected to the upper optical pad 2011 and the lower optical pad 2021 through the first metal layer 208 and the second metal layer 209. At the same time, the mechanical strength between the electroplated copper layer 203 and the upper optical pad 2011 and the lower optical pad 2021 can be further enhanced.
[0076] refer to Figure 6 , Figure 6 2 is a dimension marking diagram of an embodiment of a package structure 2a according to the present application.
[0077] like Figure 6 As shown, L1 may represent the thickness of the upper substrate 201 or the lower substrate 202 , and the range of L1 may be 10 um to 100 um.
[0078] L2 may represent the distance between the upper substrate 201 and the lower substrate 202 , and the range of L2 may be 10 um to 50 um.
[0079] L3 may represent a horizontal width of the first seed layer 206 and the first metal layer 208 on the upper optical pad 2011 or the second seed layer 207 and the second metal layer 209 on the lower optical pad 2021 , and the range of L3 may be 1 um to 20 um.
[0080] L4 may represent the width of the electroplated copper layer 203 in the horizontal direction, and the range of L4 may be 1 um to 30 um.
[0081] L5 may represent the height of the electroplated copper layer 203 in the vertical direction, and the range of L5 may be 1 um to 30 um.
[0082] L6 may represent the thickness of the first seed layer 206 or the second seed layer 207 , and the range of L6 may be 0.1 um to 5 um.
[0083] L7 may represent the thickness of the first metal layer 208 or the second metal layer 209 , and the range of L7 may be 0.1 um to 10 um.
[0084] L8 may represent the thickness of the distance from the edge of the first seed layer 206 located at the upper optical pad 2011 or the second seed layer 207 located at the lower optical pad 2021 to the edge of the electroplated copper layer 203 , and the range of L8 may be 0.5 um to 20 um.
[0085] L9 may represent the diameter of the optical channel 2031 , and the range of L9 may be 1 um to 30 um.
[0086] L10 may represent the distance between two adjacent electroplated copper layers 203 , and the range of L10 may be 1 um to 30 um.
[0087] Above, an embodiment 2a of the packaging structure of the present application is introduced.
[0088] refer to Figure 7 , Figure 7 It is a structural diagram of an embodiment 3a of the packaging structure according to the present application.
[0089] Figure 7 The package structure 3a shown is similar to Figure 2 The package structure 2 a shown in FIG. 1 is different in that the first seed layer 206 extends along the surface of the upper optical pad 2011 into the optical channel 2031 .
[0090] Here, the first seed layer 206 extends along the surface of the upper optical pad 2011 into the optical channel 2031 and the seed layers on both sides of the upper optical pad 2011 do not contact the upper optical pad 2011 , that is, the first seed layer 206 does not completely cover the surface of the upper optical pad 2011 .
[0091] Compared with the first seed layer 206 in the packaging structure 2a, the first seed layer 206 of the packaging structure 3a extends from the upper optical pad 2011 to the optical channel 2031, and the first metal layer 208 is arranged on the first seed layer 206. The first metal layer 208 can also extend from the upper optical pad 2011 to the optical channel 2031, thereby increasing the contact area between the electroplated copper layer 203 and the first metal layer 208. Further, the electrical connection performance between the electroplated copper layer 203 and the upper optical pad 2011 and the lower optical pad 2021 can be improved. At the same time, the mechanical strength between the electroplated copper layer 203 and the upper optical pad 2011 can also be increased.
[0092] An embodiment 3a of the packaging structure of the present application has been introduced above.
[0093] Figure 8 It is a structural diagram of an embodiment 4a of the packaging structure according to the present application.
[0094] Figure 8 The package structure 4a shown is similar to Figure 2 The package structure 2a shown in FIG is different in that:
[0095] Figure 2 The cross-sectional shape of the electroplated copper layer 203 is rectangular. Figure 8 The shape of the electroplated copper layer 203 in the package structure 4 a shown is trapezoidal.
[0096] exist Figure 8In the embodiment, the horizontal width of the cross section of the electroplated copper layer 203 gradually decreases from the upper optical pad 2011 to the lower optical pad 2021, which can also achieve the technical effect shown in the packaging structure 2a.
[0097] Above, an embodiment 4a of the packaging structure of the present application is introduced.
[0098] refer to Figure 9 , Figure 9 It is a structural diagram of an embodiment 5a of the packaging structure according to the present application.
[0099] Figure 9 The package structure 5a shown is similar to Figure 8 The package structure 4a shown in FIG is different in that:
[0100] The horizontal width of the cross section of the electroplated copper layer 203 gradually decreases from the optical pad 2021 to the optical pad 2011 , and the technical effect shown in the packaging structure 2 a can also be achieved.
[0101] An embodiment 5a of the packaging structure of the present application has been introduced above.
[0102] refer to Figure 10 , Figure 10 It is a structural diagram of an embodiment 6a of the packaging structure according to the present application.
[0103] Figure 10 The package structure 6a shown is similar to Figure 2 The package structure 2a shown in FIG is different in that:
[0104] Figure 2 In the package structure 2 a shown, two adjacent electroplated copper layers 203 are spaced apart, and the optical waveguide adhesive layer 205 is filled in the space between the two adjacent electroplated copper layers 203 .
[0105] The spacing between two adjacent electroplated copper layers 203 can provide better electrical isolation and prevent short circuits or crosstalk between different electroplated copper layers 203 .
[0106] Figure 10 In the package structure 6 a shown, two adjacent electroplated copper layers 203 are in direct contact.
[0107] Two adjacent electroplated copper layers 203 in direct contact can provide good electrical conductivity, ensuring that current can flow smoothly between different electroplated copper layers 203. The specific setting can be selected according to actual needs and is not limited here.
[0108] Above, an embodiment 6a of the packaging structure of the present application is introduced.
[0109] refer to Figure 11 and Figure 12 , Figure 11 is a structural diagram of an embodiment 7a of the packaging structure according to the present application, Figure 12 yes Figure 11 A local enlarged view of the rectangular dotted area.
[0110] like Figure 7 The package structure 7 a shown further includes a soldering layer 210 . The soldering layer 210 is disposed on the electroplated copper layer 203 . The electroplated copper layer 203 is electrically connected to the upper optical pad 2011 and the lower optical pad 2021 through the soldering layer 210 .
[0111] Here, by setting the welding layer 210 on the electroplated copper layer 203, the electroplated copper layer 203 is electrically connected to the upper optical pad 2011 and the lower optical pad 2021 through the welding layer 210, which can improve the structural stability and durability of the packaging structure 7a.
[0112] Above, an embodiment 7a of the packaging structure of the present application is introduced.
[0113] refer to Figure 13-Figure 31 It is a schematic diagram of the manufacturing steps of an embodiment 2a of the semiconductor packaging structure according to the present application.
[0114] refer to Figure 13 , providing an upper substrate 201.
[0115] Here, the upper substrate (substrate) 201 may include organic and / or inorganic substances. The organic substances may be, for example, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (Poly-p-phenylene benzobisoxazole, PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.
[0116] refer to Figure 14 , providing a waveguide film 211.
[0117] Here, the waveguide film 211 may be laid on the upper substrate 201 through a lamination process.
[0118] The waveguide film 211 can be, for example, a non-metallic material including PI (Polyimide), Epoxy (epoxy resin), ABF (Ajinomoto Build-up Film), PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet) or acrylic, and can also include an organic photosensitive material or a non-photosensitive liquid material or a dry film material.
[0119] refer to Figure 15 , forming an upper optical pad 2011.
[0120] Here, a portion of the waveguide film 211 may be removed through photolithography and development processes, thereby forming an upper optical pad 2011 on the upper substrate 201 . The upper optical pad 2011 may be used to receive and transmit optical signals.
[0121] refer to Figure 16 , providing a metal titanium layer and a metal copper layer.
[0122] A physical vapor deposition process may be used to first deposit a metal titanium layer on the upper optical pad 2011 and the upper substrate 201 , and then deposit a metal copper layer on the metal titanium layer.
[0123] Here, the metal titanium layer may serve as the initial first seed layer 206 , and the metal copper layer may serve as the initial first metal layer 208 .
[0124] refer to Figure 17 , providing a photoresist 212.
[0125] Here, first of all, you can Figure 16 A layer of photoresist is coated on the surface of the formed structure, and then the required patterns of the first seed layer 206 and the first metal layer 208 are created on the layer using photolithography technology.
[0126] refer to Figure 18 , removing part of the photoresist 212.
[0127] Here, the photoresist can be developed and etched. Figure 17 The structure is etched to remove the excess titanium layer and copper layer, leaving only the first seed layer 206 and the first metal layer 208, to form Figure 18 The structure shown.
[0128] refer to Figure 19 , providing a first seed layer 206 and a first metal layer 208 .
[0129] Through the above steps, the final first seed layer 206 and the first metal layer 208 are formed. The first seed layer 206 is disposed on the upper optical pad 2011 , and the first metal layer 208 is disposed on the first seed layer 206 .
[0130] refer to Figure 20 , providing a lower substrate 202.
[0131] Here, the lower substrate (substrate) 202 may include organic and / or inorganic substances. The organic substances may be, for example, polyamide fiber (Polyamide, PA), polyimide (Polyimide, PI), epoxy resin (Epoxy), poly-p-phenylene benzobisoxazole (Poly-p-phenylene benzobisoxazole, PBO) fiber, FR-4 epoxy glass cloth laminate, PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet), ABF (Ajinomoto Build-up Film), etc., and the inorganic substances may be, for example, silicon (Si), glass, ceramic, silicon oxide, silicon nitride, tantalum oxide, etc.
[0132] refer to Figure 21 , providing a waveguide film 211.
[0133] Here, the waveguide film 211 may be laid on the lower substrate 202 through a lamination process.
[0134] The waveguide film 211 can be, for example, a non-metallic material including PI (Polyimide), Epoxy (epoxy resin), ABF (Ajinomoto Build-up Film), PP (PrePreg, prepreg material or semi-cured resin, semi-cured sheet) or acrylic, and can also include an organic photosensitive material or a non-photosensitive liquid material or a dry film material.
[0135] refer to Figure 22 , forming a lower optical pad 2021.
[0136] Here, part of the waveguide film 211 may be removed through photolithography and development processes, thereby forming a lower optical pad 2021 on the lower substrate 202 . The lower optical pad 2021 may also be used to receive and transmit optical signals.
[0137] refer to Figure 23 , providing a metal titanium layer and a metal copper layer.
[0138] A physical vapor deposition process may be used to first deposit a metal titanium layer on the lower optical pad 2021 and the lower substrate 202 , and then deposit a metal copper layer on the metal titanium layer.
[0139] Here, the metal titanium layer may serve as the initial second seed layer 207 , and the metal copper layer may serve as the initial second metal layer 209 .
[0140] refer to Figure 24 , providing a photoresist 212.
[0141] Here, first of all, you can Figure 23 A layer of photoresist is coated on the surface of the formed structure, and then the required patterns of the second seed layer 207 and the second metal layer 209 are created on the layer by photolithography technology.
[0142] refer to Figure 25 , removing part of the photoresist 212 and forming an electroplated copper layer 203.
[0143] Here, the photoresist can be developed and etched. Figure 17 The formed structure is etched to etch away the excess titanium layer and copper layer, leaving only the required second seed layer 207 and second metal layer 209 , and electroplating is performed at the pattern positions where the second seed layer 207 and second metal layer 209 are located to form an electroplated copper layer 203 .
[0144] refer to Figure 26 , providing a second seed layer 207 and a second metal layer 209 .
[0145] Here, the photoresist can be developed and etched. Figure 26 The structure is etched to remove the excess titanium layer and copper layer, leaving only the second seed layer 207 and the second metal layer 209, to form Figure 27 The structure shown.
[0146] refer to Figure 27 , providing a second seed layer 207 and a second metal layer 209 .
[0147] Through the above steps, the final second seed layer 207 and the second metal layer 209 are formed. The second seed layer 207 is disposed on the lower optical pad 2021 , and the second metal layer 209 is disposed on the second seed layer 207 .
[0148] refer to Figure 28 , providing a nozzle 213 and an optical waveguide adhesive layer 205.
[0149] Here, the optical waveguide adhesive may be sprayed onto the lower substrate 202 through the nozzle 213 .
[0150] refer to Figure 29 ,Will Figure 19 The structure formed is pressed down to Figure 28 On the structure formed.
[0151] refer to Figure 30 ,refer to Figure 28 , through sintering and fusion process Figure 19 The structure formed and Figure 28 The structures are fused together to form the optical waveguide adhesive layer 205 and the optical channel 204.
[0152] refer to Figure 31 , forming a packaging structure 2a.
[0153] Here, in the packaging structure 2a, the lower substrate 202 may include a lower optical pad 2021 opposite to the upper optical pad 2011, and the electroplated copper layer 203 is configured to electrically connect the upper optical pad 2011 and the lower optical pad 2021. In this way, the electroplated copper layer 203 can realize the transmission of electrical signals between the upper substrate 201 and the lower substrate 202, which can replace the current multi-layer redistribution layer and bonding wire process, reduce the thickness of the packaging structure, and make the process simpler, thereby improving the yield of the packaging structure and reducing costs. At the same time, the electroplated copper layer 203 includes an optical channel 2031, and the optical channel 2031 is configured to penetrate and connect the upper optical pad 2011 and the lower optical pad 2021, so as to realize the transmission of optical signals in the optical channel 204. Moreover, the optical signal is transmitted in the closed space composed of the electroplated copper layer 203, the upper optical pad 2011 and the lower optical pad 2021, which can minimize the loss of optical signals during transmission.
[0154] Although the present application has been described and illustrated with reference to specific embodiments of the present application, these descriptions and illustrations do not limit the present application. It will be clearly understood by those skilled in the art that various changes may be made and equivalent elements may be substituted within the embodiments without departing from the true spirit and scope of the present application as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to variables in the manufacturing process, etc., there may be differences between the technical reproduction in the present application and the actual implementation. There may be other embodiments of the present application that are not specifically described. The description and illustrations should be regarded as illustrative, not restrictive. Modifications may be made to adapt specific circumstances, materials, compositions of matter, methods or processes to the objectives, spirit and scope of the present application. All such modifications fall within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations may be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present application. Therefore, unless specifically indicated herein, the order and grouping of operations do not limit the present application.
Claims
1. A packaging structure, characterized in that: include: an upper substrate including an upper optical spacer; a lower substrate comprising a lower optical pad opposite to the upper optical pad; an electroplated copper layer configured to electrically connect the upper optical pad and the lower optical pad, the electroplated copper layer comprising an optical channel configured to penetrate and connect the upper optical pad and the lower optical pad, and a sidewall of the optical channel being smooth and free of protrusions; The optical waveguide adhesive layer fills the space between the upper substrate and the lower substrate.
2. The packaging structure according to claim 1, wherein: The inner sidewall of the electroplated copper layer completely surrounds the optical channel.
3. The packaging structure according to claim 2, wherein: In the top view direction, the electroplated copper layer and the optical channel are arranged in concentric circles.
4. The packaging structure according to claim 1, wherein: The upper optical spacer protrudes from the upper substrate.
5. The packaging structure according to claim 1, wherein: The packaging structure further includes: a first seed layer disposed on the upper optical pad; The second seed layer is disposed on the lower optical pad.
6. The packaging structure according to claim 5, wherein: The second seed layer extends along a surface of the lower optical pad to a surface of the lower substrate.
7. The packaging structure according to claim 6, wherein: The horizontal width of the second seed layer is equal to the horizontal width of the electroplated copper layer.
8. The packaging structure according to claim 5, wherein: The horizontal width of the first seed layer is smaller than the horizontal width of the electroplated copper layer.
9. The packaging structure according to claim 5, wherein: The first seed layer exposes the upper surface of the electroplated copper layer in the optical channel.
10. The packaging structure according to claim 1, wherein: Two adjacent electroplated copper layers are spaced apart, and the optical waveguide adhesive layer is filled in the space between the two adjacent electroplated copper layers.